WO2014148248A1 - Capteur de pression de type capacitif et appareil d'entrée - Google Patents

Capteur de pression de type capacitif et appareil d'entrée Download PDF

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Publication number
WO2014148248A1
WO2014148248A1 PCT/JP2014/055487 JP2014055487W WO2014148248A1 WO 2014148248 A1 WO2014148248 A1 WO 2014148248A1 JP 2014055487 W JP2014055487 W JP 2014055487W WO 2014148248 A1 WO2014148248 A1 WO 2014148248A1
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WO
WIPO (PCT)
Prior art keywords
fixed electrode
pressure sensor
electrode
diaphragm
impurity concentration
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PCT/JP2014/055487
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English (en)
Japanese (ja)
Inventor
井上　勝之
Original Assignee
オムロン株式会社
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Publication date
Application filed by オムロン株式会社 filed Critical オムロン株式会社
Priority to CN201480012015.8A priority Critical patent/CN105026904A/zh
Priority to KR1020157022242A priority patent/KR101818316B1/ko
Publication of WO2014148248A1 publication Critical patent/WO2014148248A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm

Definitions

  • the present invention relates to a capacitive pressure sensor and an input device. Specifically, the present invention relates to a touch-mode capacitive pressure sensor in which a diaphragm bent by pressure contacts a dielectric layer to detect pressure. The present invention also relates to an input device using the pressure sensor.
  • a conductive diaphragm (movable electrode) and a fixed electrode are opposed to each other with a gap therebetween, and a change in capacitance between the diaphragm bent by pressure and the fixed electrode.
  • the pressure is detected from.
  • the pressure sensor is a micro device manufactured by MEMS technology using a glass substrate or a silicon substrate, the diaphragm may be destroyed if the diaphragm is greatly bent by applying a large pressure to the diaphragm.
  • a pressure sensor has been proposed. Such a pressure sensor may be referred to as a touch mode capacitive pressure sensor.
  • FIG. 1A is a cross-sectional view showing a pressure sensor 11 described in Non-Patent Document 1.
  • a fixed electrode 13 made of a metal thin film is formed on the upper surface of a glass substrate 12, and a dielectric film 14 is formed on the upper surface of the glass substrate 12 from above the fixed electrode 13.
  • a through hole 15 is opened in the dielectric film 14, and an electrode pad 16 provided on the upper surface of the dielectric film 14 is connected to the fixed electrode 13 through the through hole 15.
  • a silicon substrate 17 is laminated on the upper surface of the dielectric film 14.
  • a recess 18 is provided on the upper surface of the silicon substrate 17 and a recess 19 is provided on the lower surface.
  • a thin film diaphragm 20 is formed between the recess 18 and the recess 19. is doing.
  • the diaphragm 20 is provided at a position overlapping the fixed electrode 13.
  • the lower surface of the silicon substrate 17 is a P + layer 21 in which B (boron) is doped at a high concentration, whereby the diaphragm 20 is given conductivity and has a function of a movable electrode.
  • a gap 22 of several ⁇ m is generated by the recess 19 between the lower surface of the diaphragm 20 and the dielectric film 14.
  • FIG. 1B is a diagram showing the relationship between the pressure of the pressure sensor 11 and the capacitance (pressure-capacitance characteristics), and is described in Non-Patent Document 1.
  • the diaphragm 20 bends according to the applied pressure and contacts the dielectric film 14 at a certain pressure.
  • a section (non-contact area) where the pressure is from 0 to Pa in FIG. 1B is a state where the diaphragm 20 is not in contact with the dielectric film 14.
  • a section (contact start region) from pressure Pa to Pb represents a state from when the diaphragm 20 contacts the dielectric film 14 until it reliably contacts with a certain area.
  • the section (operation region) where the pressure is from Pb to Pc the area of the portion where the diaphragm 20 is in contact with the dielectric film 14 gradually increases as the pressure increases.
  • the section (saturation region) where the pressure is from Pc to Pd is a region where almost the entire surface of the diaphragm 20 is in contact with the dielectric film 14 and the contact area hardly increases even when the pressure increases.
  • the change in capacitance is small in the non-contact area where the diaphragm 20 is not in contact, but gradually the change rate (increase rate) of the capacitance in the contact start area. Becomes larger. Furthermore, although the linearity is improved in the operation region, the change rate of the capacitance gradually decreases, and the capacitance hardly increases in the saturation region.
  • the diaphragm 20 and the dielectric film 14 can be expressed by the following formula 1.
  • C Co + ⁇ ⁇ (S / d) (Formula 1)
  • Co is a capacitance in a non-contact region. Since the thickness d and dielectric constant ⁇ of the dielectric film 14 do not change, according to Equation 1, when the pressure P increases, the contact area S of the diaphragm 20 increases, and as a result, the capacitance C of the pressure sensor 11 increases. I understand that
  • the present invention has been made in view of the technical background as described above, and an object of the present invention is to reduce the influence of a depletion layer when a semiconductor is used as a fixed electrode, thereby reducing the sensor output. Another object of the present invention is to provide a touch-mode capacitive pressure sensor that can improve the deterioration of temperature characteristics and frequency characteristics of sensor output.
  • a capacitance-type pressure sensor includes a semiconductor fixed electrode, a dielectric layer formed above the fixed electrode, and a diaphragm formed above the dielectric layer with a gap therebetween.
  • the impurity concentration in at least the upper surface of the fixed electrode is 2.00 ⁇ 10 17 cm ⁇ 3 or more and 2.10 ⁇ 10 19 cm ⁇ 3 or less.
  • the capacitive pressure sensor of the present invention since a semiconductor, for example, a silicon substrate is used as the fixed electrode, the productivity of the pressure sensor is improved. Moreover, since the impurity concentration is increased to 2.00 ⁇ 10 17 cm ⁇ 3 or more and 2.10 ⁇ 10 19 cm ⁇ 3 or less, the influence of the depletion layer in the fixed electrode can be reduced, and the sensor output is increased. The temperature characteristics and frequency characteristics can be improved.
  • a metal electrode may be provided on the upper surface of the fixed electrode, or a metal electrode may be provided on the lower surface of the fixed electrode.
  • a metal electrode is provided on the upper surface of the fixed electrode, a space for arranging the metal electrode on the upper surface of the fixed electrode is required, and the size of the pressure sensor increases accordingly.
  • the metal electrode is provided on the lower surface of the fixed electrode, the size of the pressure sensor does not increase.
  • the impurity concentration in the entire length in the thickness direction of the fixed electrode is preferably 2.00 ⁇ 10 17 cm ⁇ 3 or more and 2.10 ⁇ 10 19 cm ⁇ 3 or less. .
  • the impurity concentration may be 2.00 ⁇ 10 17 cm ⁇ 3 or more and 2.10 ⁇ 10 19 cm ⁇ 3 or less only in the vicinity of the upper surface of the fixed electrode.
  • the impurity concentration at least on the upper surface of the fixed electrode is more preferably 3.00 ⁇ 10 18 cm ⁇ 3 or more and 2.10 ⁇ 10 19 cm ⁇ 3 or less. In this case, the frequency characteristics of the sensor output can be improved.
  • the impurity concentration of the diaphragm may be 2.00 ⁇ 10 17 cm ⁇ 3 or more and 2.10 ⁇ 10 19 cm ⁇ 3 or less. According to such an embodiment, the influence of the depletion layer in the diaphragm can be reduced, the sensor output can be increased, and the temperature characteristics and frequency characteristics can be improved.
  • a plurality of capacitance type pressure sensors of the present invention it can be used as an input device such as a touch pad.
  • the means for solving the above-described problems in the present invention has a feature in which the above-described constituent elements are appropriately combined, and the present invention enables many variations by combining such constituent elements. .
  • FIG. 1A is a schematic cross-sectional view showing a pressure sensor according to a conventional example.
  • FIG. 1B is a diagram showing the relationship between pressure and capacitance in the conventional pressure sensor shown in FIG.
  • FIG. 2 is a plan view showing the pressure sensor according to Embodiment 1 of the present invention.
  • FIG. 3 is a cross-sectional view of the pressure sensor shown in FIG. 4A to 4C are cross-sectional views showing a part of the manufacturing process of the pressure sensor of FIG.
  • FIG. 5 is a diagram illustrating the temperature characteristics of the capacitance between each diaphragm and the fixed electrode in each pressure sensor having different impurity concentrations of the fixed electrode.
  • FIG. 6 is a diagram showing the frequency characteristics of the capacitance between each diaphragm and the fixed electrode in each pressure sensor having a different impurity concentration of the fixed electrode.
  • FIG. 7 is a cross-sectional view of a pressure sensor according to Embodiment 2 of the present invention.
  • FIG. 8 is a cross-sectional view of an input device according to Embodiment 3 of the present invention.
  • FIG. 2 is a plan view of the pressure sensor 31
  • FIG. 3 is a cross-sectional view of the pressure sensor 31.
  • a dielectric layer 33 is formed on a fixed electrode 32 made of a silicon substrate.
  • the dielectric layer 33 is made of a dielectric material such as SiO 2 (thermal oxide film), SiN, or TEOS.
  • the dielectric layer 33 has a recess 33a (concave portion) formed on the upper surface thereof.
  • a thin film upper substrate 35a made of a silicon substrate is formed on the upper surface of the dielectric layer 33.
  • the upper substrate 35a covers the upper surface of the recess 33a, and an air gap 34 (air gap) is formed between the lower surface of the upper substrate 35a and the recess bottom surface of the dielectric layer 33 by the recess 33a.
  • a pressure-sensitive diaphragm 35 is formed by a region of the upper substrate 35a that is horizontally stretched above the air gap 34.
  • a vent line 36 air passage
  • the vent line 36 is a narrow groove having a width of about 30 ⁇ m, and is bent or meandered so that foreign matters such as dust and dirt do not easily enter the air gap 34.
  • an annular upper electrode 37 made of a metal material is provided so as to surround the diaphragm 35.
  • An electrode pad 40 (metal electrode) is provided at a corner portion of the upper substrate 35 a, and the upper electrode 37 and the electrode pad 40 are connected by a wiring portion 42.
  • the upper electrode 37, the wiring portion 42, and the electrode pad 40 are simultaneously formed by a two-layer metal thin film of a base layer Ti (1000 ⁇ ) / surface layer Au (3000 ⁇ ).
  • a lower electrode 38 (metal electrode) is provided on the lower surface of the fixed electrode 32.
  • the lower electrode 38 is also made of a two-layer metal thin film of underlying layer Ti (1000 ⁇ ) / surface layer Au (3000 ⁇ ).
  • a region outside the upper electrode 37 on the upper surface of the upper substrate 35a is covered with a protective film 41 made of a resin such as polyimide or an insulating film such as SiO 2 or SiN.
  • the protective film 41 is removed in the vicinity of the electrode pad 40, and the electrode pad 40 is exposed from the protective film 41.
  • the pressure sensor 31 includes a silicon substrate 45 (to be a plurality of fixed electrodes 32) having a dielectric layer 33 formed on the upper surface and a silicon substrate 46 (a plurality of upper substrates 35a). And the upper electrode 37 and the like are further provided.
  • the silicon substrate 46 is etched by wet etching or dry etching to form a groove 47 between the separated upper substrates 35a, and the dielectric layer 33 is formed on the bottom surface of the groove 47.
  • the dicing blade 48 is run along the groove 47 to cut the dielectric layer 33 and the fixed electrode 32, thereby forming a plurality of independent pressure sensors 31 as shown in FIG.
  • the impurity concentration of the fixed electrode 32 will be described.
  • the entire silicon substrate used as the fixed electrode 32 (especially the entire thickness direction) is doped with impurities such as boron (B), phosphorus (P), and arsenic (As) in advance.
  • the impurity concentration is 2.00 ⁇ 10 17 cm ⁇ 3 or more and 2.10 ⁇ 10 19 cm ⁇ 3 or less.
  • a depletion layer generated in the fixed electrode 32 is reduced or eliminated when a voltage is applied between the diaphragm 35 and the fixed electrode 32. Can do.
  • the sensor output of the pressure sensor 31 can be increased, and the temperature characteristics and frequency characteristics of the sensor output can be improved.
  • the impurity concentration of the fixed electrode is 1.50 ⁇ 10 16 cm ⁇ 3 (resistivity 1.00 ⁇ ⁇ cm), 2.00 ⁇ 10 17 cm ⁇ 3 (resistivity 0.10 ⁇ ⁇ cm).
  • the impurity concentration of the fixed electrode is 1.50 ⁇ 10 16 cm ⁇ 3 , 2.00 ⁇ 10 17 cm ⁇ 3 , 6.00 ⁇ 10 17 cm ⁇ 3 , 3.00 ⁇ 10 18 cm. -3 , 8.00 ⁇ 10 18 cm ⁇ 3 , 2.10 ⁇ 10 19 cm ⁇ 3 for six samples, the influence of frequency on the capacitance between the diaphragm and the fixed electrode (frequency characteristics) The results of the investigation are shown.
  • the data shown in FIG. 6 are simulation values when 75% of the total area of the diaphragm 35 is in contact with the dielectric layer 33 (that is, when the pressure is constant).
  • the dielectric layer 33 is Th—SiO 2 having a thickness of 100 mm.
  • the capacitance starts to decrease from the frequency around 5 ⁇ 10 5 Hz.
  • the frequency is flat up to about 1.0 ⁇ 10 6 Hz.
  • the impurity concentration is 3.00 ⁇ 10 18 cm ⁇ 3 or more, the frequency characteristics are almost flat up to around 1.0 ⁇ 10 7 Hz.
  • each sample with an impurity concentration of 2.00 ⁇ 10 17 cm ⁇ 3 to 2.10 ⁇ 10 19 cm ⁇ 3 is compared with a sample with an impurity concentration of 1.50 ⁇ 10 16 cm ⁇ 3. It can be seen that a large capacitance can be obtained.
  • the impurity concentration of the fixed electrode 32 is 2.00 ⁇ 10 17 cm ⁇ 3 or more and 2.10 ⁇ 10 19 cm ⁇ 3 or less, the influence of the depletion layer can be reduced, and as a result, the sensor output is reduced.
  • the sensitivity of the pressure sensor 31 can be improved.
  • the temperature characteristics and frequency characteristics of the sensor output can be improved.
  • the impurity concentration of the fixed electrode 32 is 3.00 ⁇ 10 18 cm ⁇ 3 or more and 2.10 ⁇ 10 19 cm ⁇ 3 or less, more preferable characteristics can be obtained.
  • the lower electrode 38 (metal electrode) is provided on the lower surface of the fixed electrode 32.
  • the lower electrode 38 is provided on the upper surface of the fixed electrode 32 (see the second embodiment in FIG. 7)
  • a space for arranging the lower electrode 38 on the upper surface of the fixed electrode 32 is required.
  • the size (width) of the electrode 32 is increased, and the pressure sensor is increased in size.
  • the lower electrode 38 is provided on the lower surface of the fixed electrode 32 as in the present embodiment, a relatively large lower electrode 38 can be provided and the pressure sensor 31 can be downsized. be able to.
  • the total impurity concentration of the fixed electrode 32 is 2.00 ⁇ 10 17 cm ⁇ 3 or more and 2.10 ⁇ 10 19 cm ⁇ 3 or less. If the impurity concentration is 2.00 ⁇ 10 17 cm ⁇ 3 or more and 2.10 ⁇ 10 19 cm ⁇ 3 or less over the entire length in the thickness direction of the fixed electrode 32 in the entire region facing the recess 33a. It is enough. That is, when the lower electrode 38 is provided on the lower surface of the fixed electrode 32, the thickness direction of the fixed electrode 32 is greater than the upper surface of the fixed electrode 32 in order to allow current (charge) to flow through the entire length of the fixed electrode 32.
  • the impurity concentration is 2.00 ⁇ 10 17 cm ⁇ 3 or more and 2.10 ⁇ 10 19 cm ⁇ 3 or less over the entire length, the influence of the depletion layer in the fixed electrode 32 can be reduced, and the thickness direction of the fixed electrode 32 can be reduced. By lowering the resistance, the output of the pressure sensor 31 can be increased and the temperature characteristics and frequency characteristics can be improved.
  • the results shown in FIGS. 5 and 6 can be applied to the diaphragm 35 together with the fixed electrode 32. That is, if the impurity concentration of the diaphragm 35 is 2.00 ⁇ 10 17 cm ⁇ 3 or more and 2.10 ⁇ 10 19 cm ⁇ 3 or less, the influence of the depletion layer in the diaphragm 35 can be reduced, and the sensor output is increased. can do. In addition, the temperature characteristics and frequency characteristics of the sensor output can be improved.
  • FIG. 7 is a sectional view showing a pressure sensor 51 according to Embodiment 2 of the present invention.
  • the lower electrode 38 is provided on the upper surface of the fixed electrode 32.
  • the impurity concentration may be 2.00 ⁇ 10 17 cm ⁇ 3 or more and 2.10 ⁇ 10 19 cm ⁇ 3 or less only near the upper surface of the fixed electrode 32.
  • FIG. 8 is a cross-sectional view showing the structure of a plate-type input device 61 according to Embodiment 3 of the present invention, for example, a touch panel.
  • the input device 61 has a large number of pressure sensors 31 (sensor units) according to the first embodiment arranged in an array (for example, a rectangular shape or a honeycomb shape).
  • Each pressure sensor 31 is electrically independent, and the pressure applied to each pressure sensor 31 can be detected independently. According to such an input device 61, it is possible to detect a point pressed by a pressing body like a touch panel, and it is also possible to detect a pressing strength (a magnitude of pressure) at each point.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)

Abstract

Selon l'invention, une couche diélectrique (33) est formée sur une surface supérieure d'une électrode fixe (32) formée d'un semi-conducteur. Un renfoncement (33a) est formé dans une surface de la couche diélectrique (33) par renfoncement d'une partie de la surface de la couche diélectrique (33). Un substrat supérieur (35a) est stratifié sur une surface supérieure de la couche diélectrique (33) de façon à recouvrir le renfoncement (33a). Une partie en forme de couche mince du substrat supérieur (35a), ladite partie étant positionnée au-dessus du renfoncement (33a), forme un diaphragme conducteur (35) qui peut être déformé en raison de la pression. Une concentration d'impuretés d'au moins la couche supérieure de l'électrode fixe (32) est de 2,00 × 1017 à 2,10 × 1019 cm-3.
PCT/JP2014/055487 2013-03-19 2014-03-04 Capteur de pression de type capacitif et appareil d'entrée WO2014148248A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201480012015.8A CN105026904A (zh) 2013-03-19 2014-03-04 静电电容型压力传感器及输入装置
KR1020157022242A KR101818316B1 (ko) 2013-03-19 2014-03-04 정전용량형 압력 센서 및 입력 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013057273A JP6127625B2 (ja) 2013-03-19 2013-03-19 静電容量型圧力センサ及び入力装置
JP2013-057273 2013-03-19

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI617505B (zh) * 2015-09-01 2018-03-11 Azbil Corp Micromechanical device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021165636A (ja) * 2018-05-16 2021-10-14 株式会社村田製作所 圧力センサ

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JPH02290525A (ja) * 1988-12-30 1990-11-30 United Technol Corp <Utc> 低誘電ドリフト容量型圧力センサ
JPH06229859A (ja) * 1993-02-02 1994-08-19 Fujitsu Ltd 薄膜圧力センサとその製造方法
JPH10111203A (ja) * 1996-10-08 1998-04-28 Fujikura Ltd 静電容量式半導体センサ及びその製造方法
JPH10190004A (ja) * 1996-12-24 1998-07-21 Sony Corp 半導体圧力感知装置及びその製造方法
JP2000022172A (ja) * 1998-06-30 2000-01-21 Matsushita Electric Ind Co Ltd 変換装置及びその製造方法
JP2002214058A (ja) * 2001-01-16 2002-07-31 Fujikura Ltd 圧力センサおよびその製造方法

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JP2001313342A (ja) * 1999-06-04 2001-11-09 Matsushita Electric Ind Co Ltd 半導体素子およびその製造方法
US7146016B2 (en) * 2001-11-27 2006-12-05 Center For National Research Initiatives Miniature condenser microphone and fabrication method therefor
JP2011158317A (ja) * 2010-01-29 2011-08-18 Panasonic Electric Works Co Ltd 圧力センサ
US8316718B2 (en) * 2010-08-23 2012-11-27 Freescale Semiconductor, Inc. MEMS pressure sensor device and method of fabricating same
JP5436404B2 (ja) * 2010-12-17 2014-03-05 三菱電機株式会社 半導体圧力センサ及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02290525A (ja) * 1988-12-30 1990-11-30 United Technol Corp <Utc> 低誘電ドリフト容量型圧力センサ
JPH06229859A (ja) * 1993-02-02 1994-08-19 Fujitsu Ltd 薄膜圧力センサとその製造方法
JPH10111203A (ja) * 1996-10-08 1998-04-28 Fujikura Ltd 静電容量式半導体センサ及びその製造方法
JPH10190004A (ja) * 1996-12-24 1998-07-21 Sony Corp 半導体圧力感知装置及びその製造方法
JP2000022172A (ja) * 1998-06-30 2000-01-21 Matsushita Electric Ind Co Ltd 変換装置及びその製造方法
JP2002214058A (ja) * 2001-01-16 2002-07-31 Fujikura Ltd 圧力センサおよびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI617505B (zh) * 2015-09-01 2018-03-11 Azbil Corp Micromechanical device

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JP2014182031A (ja) 2014-09-29
JP6127625B2 (ja) 2017-05-17
KR101818316B1 (ko) 2018-01-12
KR20150108882A (ko) 2015-09-30
CN105026904A (zh) 2015-11-04

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