WO2014136659A1 - 薄膜トランジスタの半導体層用酸化物、薄膜トランジスタおよび表示装置 - Google Patents
薄膜トランジスタの半導体層用酸化物、薄膜トランジスタおよび表示装置 Download PDFInfo
- Publication number
- WO2014136659A1 WO2014136659A1 PCT/JP2014/054958 JP2014054958W WO2014136659A1 WO 2014136659 A1 WO2014136659 A1 WO 2014136659A1 JP 2014054958 W JP2014054958 W JP 2014054958W WO 2014136659 A1 WO2014136659 A1 WO 2014136659A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- oxide
- thin film
- semiconductor layer
- film transistor
- film
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 239000010409 thin film Substances 0.000 title claims abstract description 45
- 230000007547 defect Effects 0.000 claims abstract description 37
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 36
- 239000001301 oxygen Substances 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 229910052738 indium Inorganic materials 0.000 claims abstract description 7
- 229910052718 tin Inorganic materials 0.000 claims abstract description 6
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims description 11
- 239000010408 film Substances 0.000 abstract description 88
- 238000000034 method Methods 0.000 description 31
- 230000001681 protective effect Effects 0.000 description 16
- 238000002368 isothermal capactiance transient spectroscopy Methods 0.000 description 14
- 238000005259 measurement Methods 0.000 description 14
- 239000011701 zinc Substances 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 239000011135 tin Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 230000002441 reversible effect Effects 0.000 description 8
- 230000001052 transient effect Effects 0.000 description 7
- 238000001773 deep-level transient spectroscopy Methods 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 102100031920 Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Human genes 0.000 description 4
- 101000992065 Homo sapiens Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Proteins 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000004611 spectroscopical analysis Methods 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
Definitions
- the present invention relates to an oxide for a semiconductor layer, a thin film transistor, and a display device of a thin film transistor (hereinafter sometimes referred to as TFT).
- the oxide for a semiconductor layer of a TFT suitably used for a display device such as a liquid crystal display or an organic EL (Electro Luminescence) display, the TFT including the oxide for a semiconductor layer, and the display device including the TFT About.
- An amorphous (amorphous) oxide semiconductor has a higher carrier mobility than a general-purpose amorphous silicon (a-Si), has a large optical band gap, and can be formed at a low temperature. Therefore, it is expected to be applied to next-generation displays that require large size, high resolution, and high-speed driving, and resin substrates with low heat resistance.
- a-Si general-purpose amorphous silicon
- an amorphous oxide formed of indium, zinc, tin, and oxygen (In-Zn-Sn-O, hereinafter sometimes referred to as "IZTO") has high carrier mobility. It is suitably used for a semiconductor layer of TFT.
- Patent Document 1 a semiconductor substrate made of an oxide semiconductor is exposed to hydrogen plasma or hydrogen radicals in order to reduce defects due to a non-uniform composition of the oxide semiconductor and improve transfer characteristics of the oxide semiconductor.
- a method of exposing the semiconductor substrate to a water vapor atmosphere is disclosed.
- An object of the present invention is to provide an oxide for a semiconductor layer of a thin film transistor having high mobility and reduced defect density. Another object of the present invention is to provide a thin film transistor including the oxide for a semiconductor layer and a display device.
- the oxide for a semiconductor layer of a thin film transistor according to the present invention that has solved the above problems is an oxide used for a semiconductor layer of a thin film transistor, and the metal element constituting the oxide is composed of In, Zn, and Sn.
- the oxygen partial pressure when forming the oxide on the semiconductor layer of the thin film transistor is 15% by volume or more, the defect density of the oxide is 7.5 ⁇ 10 15 cm ⁇ 3 or less, and the mobility is 15 cm. It has a gist where it satisfies 2 / Vs or more.
- the oxide has a content (atomic%) of each metal element with respect to all metal elements excluding oxygen as [In], [Zn], and [Sn], respectively. ⁇ [In], 50 ⁇ [Zn] ⁇ 95, and 1 ⁇ [Sn] ⁇ 30 are satisfied.
- the oxygen partial pressure is 40% by volume or less.
- the present invention also includes a thin film transistor including any one of the above oxides for a semiconductor layer in a semiconductor layer of the thin film transistor.
- the present invention includes a display device provided with the above thin film transistor.
- an oxide for a semiconductor layer of a thin film transistor having high mobility and reduced defect density can be provided.
- a thin film transistor including the oxide for a semiconductor layer of the present invention is used, a highly reliable display device can be obtained.
- FIG. 1 is a schematic cross-sectional view for explaining a thin film transistor of the present invention.
- FIG. 2 is a schematic cross-sectional view for explaining a MIS (Metal Insulator Semiconductor) structure element used for measurement of defect density by the ICTS method in Examples.
- FIG. 3 shows C (capacity) ⁇ V (determining the reverse voltage and pulse voltage of each oxygen partial pressure of 4 volume%, 10 volume%, 20 volume%, and 30 volume% in ICTS measurement in the example. Voltage) curve.
- FIG. 4 is a graph showing the results of drain current-gate voltage characteristics (Id-Vg characteristics) when the oxygen partial pressure during film formation is changed in the range of 4 to 30% by volume in Examples.
- FIG. 5 is a graph showing the relationship between the oxygen partial pressure during film formation and the defect density or mobility in the examples.
- the present inventors particularly provide In, in which the metal elements constituting the oxide are In, Zn, and Sn. -Zn-Sn-O (IZTO) was studied. The defect density was measured using the ICTS method (Isothermal Capacitance Transient Spectroscopy, isothermal capacity transient spectroscopy).
- Id-Vg characteristic drain current-gate voltage characteristic
- the ICTS method is a kind of capacitive transient spectroscopy, and is one of the techniques for accurately measuring localized potentials created by impurity atoms and defects contained in a semiconductor layer, such as interface traps and bulk traps.
- capacitive transient spectroscopy since the depletion layer width corresponds to the reciprocal of the time change C (t) of the junction capacitance C, information on the localized level is obtained by measuring the transient capacitance of C (t). is there.
- a method for measuring the transient capacitance in addition to the ICTS method, there is a DLTS method (Deep Level Transient Spectroscopy). Both have the same measurement principle, but different measurement methods.
- the DLTS method obtains the DLTS signal while changing the sample temperature
- the ICTS method obtains the same information as the DLTS signal by changing the emission time constant by modulating the applied pulse at a constant temperature.
- no technique has been proposed for measuring the defect density of semiconductor layer oxides such as IZTO in detail by the ICTS method and obtaining high mobility while reducing the defect density.
- the oxide for a semiconductor layer of a thin film transistor according to the present invention includes oxygen in which the metal element constituting the oxide is composed of In, Zn, and Sn, and the oxide is formed on the semiconductor layer of the thin film transistor.
- the partial pressure is 15% by volume or more.
- the defect density of the oxide (IZTO) is as low as 7.5 ⁇ 10 15 cm ⁇ 3 or less and the mobility satisfies a very high level of 15 cm 2 / Vs or more. There is.
- IZTO which is the subject of the present invention, it originally has a high mobility due to the characteristics of the oxide, but due to the defect density reduction by appropriate control of the oxygen partial pressure during IZTO film formation as in the present invention, The degree can be raised to a higher level.
- In has the effect of increasing mobility by increasing the number of carriers.
- [In] is preferably 1 or more, more preferably 5 or more, and still more preferably 10 or more. However, when the amount of In increases, the number of carriers increases so that it becomes a conductor and the stability against stress decreases.
- [In] is preferably 30 or less, more preferably 20 or less.
- Sn has an effect of improving chemical resistance of the oxide semiconductor layer, such as wet etching.
- the larger the amount of Sn the better.
- the upper limit is preferably 30 or less, more preferably 27 or less, and even more preferably 25 or less.
- Zn is believed to contribute to the stabilization of the amorphous structure. Further, since Zn contributes to improvement of stability against stress, the larger the amount of Zn, the better. Preferably it is 50 or more, More preferably, it is 53 or more, More preferably, it is 55 or more. However, when the Zn content is increased, the oxide semiconductor thin film is crystallized or a residue is generated during etching. Therefore, the Zn content is preferably 95 or less, more preferably 80 or less, and even more preferably 60 or less.
- the oxide of the present invention satisfies a defect density of 7.5 ⁇ 10 15 cm ⁇ 3 or less and a mobility of 15 cm 2 / Vs or more.
- the lower the defect density the better, preferably 7.0 ⁇ 10 15 cm ⁇ 3 or less, and more preferably 6.5 ⁇ 10 15 cm ⁇ 3 or less.
- the higher the mobility the better, preferably 16 cm 2 / Vs or higher, more preferably 17 cm 2 / Vs or higher.
- the oxide is preferably formed by a sputtering method using a sputtering target. According to the sputtering method, a thin film having excellent in-plane uniformity of components and film thickness can be easily formed.
- the partial pressure of oxygen when the oxide is formed on the semiconductor layer of the thin film transistor that is, the total atmospheric gas is used.
- the volume ratio of oxygen is controlled to 15 volume% or more.
- the oxygen partial pressure is preferably as high as possible, and is preferably 20% by volume or more.
- the upper limit is preferably 40% by volume or less, more preferably 30% by volume or less.
- the present invention includes a thin film transistor in which any of the above oxides for a semiconductor layer is provided in the semiconductor layer of the thin film transistor.
- any of the above oxides for a semiconductor layer is provided in the semiconductor layer of the thin film transistor.
- there is no particular limitation except for controlling the oxygen partial pressure during the formation of the semiconductor layer and a commonly used method can be employed.
- the preferred film thickness of the semiconductor layer is approximately 30 nm or more. If the film thickness is small, a sufficient operating current cannot be secured, and variations occur during film formation by sputtering, resulting in a distribution in transistor characteristics. As a result, problems such as finally resulting in display unevenness occur.
- the lower limit is more preferably 35 nm or more.
- the upper limit is preferably 200 nm or less. As the film thickness increases, the depletion layer does not spread sufficiently with respect to changes in the gate voltage. As a result, even if the transistor does not turn off, that is, the current cannot be cut off or turned off, the gate voltage at which the transistor is turned off is shifted to the negative side more than the normal gate voltage, which is not suitable for display operation. .
- the upper limit is more preferably 150 nm or less, and still more preferably 80 nm or less.
- FIG. 1 shows a bottom gate type TFT, but the embodiment of the present invention is not limited to this.
- the present invention can also be applied to a top-gate TFT including a gate insulating film and a gate electrode in this order on an oxide semiconductor layer.
- a gate electrode 2 and a gate insulating film 3 are formed on a substrate 1, and an oxide semiconductor layer 4 is formed thereon.
- a protective film 5 is formed on the oxide semiconductor layer 4, a source / drain electrode 6 is formed thereon, a surface protective film 7 is further formed thereon, and a transparent conductive film 8 is formed on the outermost surface.
- the transparent conductive film 8 is electrically connected to the source / drain electrode 6.
- an insulating film such as a silicon oxide film (SiO 2 film) is used.
- the method for forming the gate electrode 2 and the gate insulating film 3 on the substrate 1 is not particularly limited, and a commonly used method can be employed. Further, the types of the gate electrode 2 and the gate insulating film 3 are not particularly limited, and those commonly used can be used.
- the gate electrode 2 may be a metal thin film of Al or Cu, an alloy thin film thereof, or a Mo thin film used in examples described later.
- the gate insulating film 3 is typically exemplified by a silicon oxide film (SiO 2 film), a silicon nitride film (SiN film), a silicon oxynitride film (SiON film), and the like.
- the oxide semiconductor layer 4 is formed.
- the oxide semiconductor layer 4 can be formed by a sputtering method as described above.
- a film is formed by a DC (Direct Current) sputtering method or an RF (Radio Frequency) sputtering method using a sputtering target having the same composition as that of the oxide semiconductor layer 4.
- the film may be formed by co-sputtering.
- the oxygen partial pressure is controlled to 15% by volume or more.
- the oxide semiconductor layer 4 is patterned by photolithography and wet etching.
- heat treatment pre-annealing
- the heating temperature 250 to 350 ° C.
- heating time 15 to 120 minutes.
- the heating temperature is 300 to 350 ° C.
- the heating time is 60 to 120 minutes. This increases the on-state current and field effect mobility of the transistor characteristics, and improves the transistor performance.
- a silicon oxide film (SiO 2 film) may be formed as the protective film 5 by the method described above.
- patterning is performed by performing photolithography and dry etching.
- source / drain electrodes 6 are formed.
- the type of the source / drain electrode 6 is not particularly limited, and a commonly used one can be used.
- a metal or alloy such as Al or Cu may be used, or a Mo thin film may be used as in the examples described later.
- a metal thin film is formed by a magnetron sputtering method and then formed by a lift-off method.
- a surface protective film (insulating film) 7 is formed on the source / drain electrodes 6.
- the surface protective film 7 may be formed by, for example, a CVD (Chemical Vapor Deposition) method.
- Examples of the surface protective film 7 include a silicon oxide film (SiO 2 film), a silicon nitride film (SiN film), a silicon oxynitride film (SiON film), or a laminated film thereof.
- a contact hole is formed in the surface protective film 7 by photolithography and dry etching, and then a transparent conductive film 8 is formed.
- the kind of this transparent conductive film 8 is not specifically limited, What is used normally can be used.
- the present invention includes a display device including the TFT.
- Examples of the display device include a liquid crystal display and an organic EL display.
- Example 1 TFTs were manufactured as follows, and the mobility and the defect density were measured by the ICTS method.
- the TFT used in this example has the same configuration as that in FIG. 1 except that in FIG. 1 described above, there is no protective film for protecting the surface of the oxide semiconductor layer (IZTO thin film).
- a Mo thin film having a film thickness of 100 nm is formed on a glass substrate (Corning Eagle XG, diameter 100 mm ⁇ thickness 0.7 mm) as a thin film for a gate electrode, and patterned by a known method to obtain a gate electrode. It was.
- the Mo thin film was formed by RF sputtering using a pure Mo sputtering target under conditions of film formation temperature: room temperature, film formation power: 300 W, carrier gas: Ar, gas pressure: 2 mTorr.
- a 250 nm SiO 2 film was formed as a gate insulating film.
- the gate insulating film was formed using a plasma CVD method under conditions of carrier gas: mixed gas of SiH 4 and N 2 O, film forming power: 300 W, film forming temperature: 320 ° C.
- an IZTO thin film as an oxide semiconductor layer was formed by a sputtering method using an IZTO sputtering target under the following film formation conditions.
- Sputtering equipment “CS-200” manufactured by ULVAC, Inc.
- Substrate temperature Room temperature
- Gas pressure 1 mTorr
- Oxygen partial pressure: [O 2 / (Ar + O 2 )] ⁇ 100 4% by volume, 10% by volume, 20% by volume, 30% by volume
- the oxide semiconductor layer After forming the oxide semiconductor layer as described above, patterning was performed by photolithography and wet etching.
- As the wet etchant liquid “ITO-07N” (mixed liquid of oxalic acid and water) manufactured by Kanto Chemical Co., Ltd. was used, and the liquid temperature was set to 40 ° C.
- pre-annealing treatment was performed in order to improve the film quality of the oxide semiconductor layer.
- the pre-annealing treatment was performed at 350 ° C. for 1 hour under atmospheric pressure and atmospheric pressure.
- pure Mo was used to form source / drain electrodes by a lift-off method. Specifically, after patterning using a photoresist, a Mo thin film having a thickness of 100 nm was formed by DC sputtering. The method for forming the Mo thin film for the source / drain electrodes is the same as that for the gate electrode described above. Next, an unnecessary photoresist was removed by applying an ultrasonic cleaner in an acetone solution, so that the TFT channel length was 10 ⁇ m and the channel width was 200 ⁇ m.
- a surface protective film for protecting the oxide semiconductor layer was formed.
- a laminated film having a total thickness of 350 nm including a 200 nm thick SiO 2 film and a 150 nm thick SiN film was formed.
- the SiO 2 film and the SiN film were formed using “PD-220NL” manufactured by Samco and using the plasma CVD method. In this embodiment, the SiO 2 film and the SiN film are formed in this order.
- a mixed gas of N 2 O and SiH 4 was used to form the SiO 2 film, and a mixed gas of SiH 4 , N 2 , and NH 3 was used to form the SiN film.
- the first 100 nm of the 200 nm thick SiO 2 film was set to 230 ° C., and thereafter, the remaining 100 nm thick SiO 2 film and the 150 nm thick SiN film were both set to 150 ° C. .
- the film forming power was all 100 W.
- a contact hole for probing for transistor characteristic evaluation was formed in the surface protective film by photolithography and dry etching, to produce a TFT.
- transistor characteristics drain current-gate voltage characteristics, Id-Vg characteristics), field effect mobility, and defect density were measured.
- TFT characteristics The transistor characteristics (TFT characteristics) were measured using a semiconductor parameter analyzer “4156C” manufactured by Agilent Technologies. The measurement was performed by applying a probe to the contact hole of the sample. Detailed measurement conditions are as follows. Source voltage: 0V Drain voltage: 10V Gate voltage: -30 to 30V (measurement interval: 0.25V) Substrate temperature: room temperature
- the field effect mobility ⁇ FE was derived from the TFT characteristics in a saturation region where Vd> Vg ⁇ V th .
- Vg, V th respectively the gate voltage, the threshold voltage, the drain current Id, L, the channel length of each TFT element W, the channel width, the capacitance of the gate insulating film of C i, the mu FE
- the field effect mobility was used, and ⁇ FE was derived from the following equation.
- the field effect mobility ⁇ FE was derived from the drain current-gate voltage characteristics (Id-Vg characteristics) near the gate voltage satisfying the saturation region.
- the ICTS method is a process in which an electron trap is captured by applying a forward pulse to a reverse-biased semiconductor junction, and when the reverse-biased state is restored, the trapped electrons are emitted by a thermal excitation process. This is detected as a transient change in junction capacitance, and the nature of the trap is examined.
- the defect density by the ICTS method was measured using the MIS structure element of FIG. Here, the area of the electrodes constituting the MIS was ⁇ 1 mm. Specific measurement conditions are as follows. In FIG.
- ICTS measuring device FT1030 HERA-DLTS manufactured by PhysTech Measurement temperature: 210K Reverse voltage: described in FIG. 3 Pulse voltage: described in FIG. 3 Pulse time: 100 msec Measurement frequency: 1 MHz Measurement time: 5 ⁇ 10 ⁇ 4 sec to 10 sec
- the reverse voltage and the pulse voltage at oxygen partial pressures of 4% by volume, 10% by volume, 20% by volume, and 30% by volume are the voltage values shown in the C (capacity) -V (voltage) curve of FIG. did. Details are as follows.
- the dotted line section corresponds to the changed depletion layer width.
- % means volume%.
- Reverse voltage is -17V and pulse voltage is -10V at oxygen partial pressure of 4 vol%
- Reverse voltage at 0.5% oxygen partial pressure is 0.5V
- pulse voltage is 2.5V
- the reverse voltage is 0 V and the pulse voltage is 1 V at an oxygen partial pressure of 20 vol%.
- Reverse voltage is 0V and pulse voltage is 1V when oxygen partial pressure is 30% by volume
- Correction coefficient (Xr ⁇ Xp) / Xr
- Xr is the depletion layer width at the reverse voltage V R
- Xp means the depletion layer width at the time of the pulse voltage V P.
- FIGS. 4 and 5 and Table 1 These results are shown in FIGS. 4 and 5 and Table 1.
- % means volume%.
- FIG. 4 is a graph showing the results of Id-Vg characteristics when an IZTO film is formed at respective oxygen partial pressures of 4 volume%, 10 volume%, 20 volume%, and 30 volume%.
- FIG. 5 is a graph plotting the results of defect density and mobility at each oxygen partial pressure. In FIG. 5, ⁇ indicates the result of defect density, and ⁇ indicates the result of mobility.
- FIG. 4 The horizontal axis of FIG. 4 is Vg (V), and the vertical axis is Id (A).
- Vg V
- Id A
- 1.0E-10 means 1.0 ⁇ 10 ⁇ 10 .
- the transistor characteristics when the oxygen partial pressure is 20% by volume and 30% by volume seem to be the same.
- the defect density and mobility at each oxygen partial pressure vary greatly. Specifically, it can be seen that in the range of 4 to 30% by volume of oxygen in this example, the defect density decreases as the oxygen partial pressure during IZTO film formation increases. On the other hand, the mobility showed a maximum value when the oxygen partial pressure was 20% by volume, and thereafter a tendency to decrease was observed.
- the oxygen partial pressure to 15% by volume or more, preferably 20% by volume or more and 30% by volume or less, high mobility while maintaining a low defect density. It can be seen that it can be secured.
- the defect density in managing the mobility of the TFT. If the oxygen partial pressure during the IZTO film formation is appropriately controlled as in the present invention, a low defect density and a high movement are obtained. It was proved that a TFT having the same degree can be obtained.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
本実施例では、以下のようにしてTFTを作製し、移動度、およびICTS法により欠陥密度を測定した。本実施例に用いたTFTは、前述した図1において、酸化物半導体層(IZTO薄膜)の表面を保護するための保護膜がないこと以外は、図1の構成と同じである。
(IZTO薄膜の成膜条件)
スパッタリング装置:(株)アルバック製「CS-200」
基板温度:室温
ガス圧:1mTorr
酸素分圧:[O2/(Ar+O2)]×100=4体積%、10体積%、20体積%、30体積%
トランジスタ特性(TFT特性)の測定は、Agilent Technologies社製「4156C」の半導体パラメータアナライザーを使用した。測定は、試料のコンタクトホールへプローブをあてるようにして行った。詳細な測定条件は以下のとおりである。
ソース電圧:0V
ドレイン電圧:10V
ゲート電圧:-30~30V(測定間隔:0.25V)
基板温度:室温
電界効果移動度μFEは、TFT特性からVd>Vg-Vthである飽和領域にて導出した。飽和領域ではVg、Vthをそれぞれゲート電圧、しきい値電圧、Idをドレイン電流、L、WをそれぞれTFT素子のチャネル長、チャネル幅、Ciをゲート絶縁膜の静電容量、μFEを電界効果移動度とし、μFEを下記式から導出した。本実施例では、飽和領域を満たすゲート電圧付近におけるドレイン電流-ゲート電圧特性(Id-Vg特性)から電界効果移動度μFEを導出した。
ICTS法は、逆バイアス状態の半導体接合部に順方向パルスを印加することにより電子トラップが捕獲され、再び逆バイアス状態に戻ったとき、トラップされた電子が熱的励起過程により放出される過程を、接合容量の過渡変化として検出し、トラップの性質を調べるものである。本実施例では、図2のMIS構造素子を用いてICTS法による欠陥密度を測定した。ここで、上記MISを構成する電極の面積はφ1mmとした。具体的な測定条件は以下の通りである。なお、図2中、1Aはガラス基板、2AはMo電極、3はゲート絶縁膜、4は酸化物半導体層、9はφ1mmMo電極、10Aと10Bは保護膜を示す。
ICTS測定装置:PhysTech製FT1030 HERA-DLTS
測定温度:210K
リバース電圧:図3に記載
パルス電圧:図3に記載
パルス時間:100msec
測定周波数:1MHz
測定時間:5×10-4sec~10sec
酸素分圧4体積%におけるリバース電圧は-17V、パルス電圧は-10V
酸素分圧10体積%におけるリバース電圧は0.5V、パルス電圧は2.5V
酸素分圧20体積%におけるリバース電圧は0V、パルス電圧は1V
酸素分圧30体積%におけるリバース電圧は0V、パルス電圧は1V
補正係数=(Xr-Xp)/Xr
式中、Xrはリバース電圧VRのときの空乏層幅、
Xpは、パルス電圧VPのときの空乏層幅を、それぞれ意味する。
2 ゲート電極
3 ゲート絶縁膜
4 酸化物半導体層
5 保護膜(SiO2膜)
6 ソース・ドレイン電極
7 表面保護膜(絶縁膜)
8 透明導電膜
1A ガラス基板
2A Mo電極
9 φ1mmMo電極
10A、10B 保護膜
Claims (5)
- 薄膜トランジスタの半導体層に用いられる酸化物であって、
前記酸化物を構成する金属元素は、In、Zn、およびSnからなり、
前記酸化物を薄膜トランジスタの半導体層に成膜するときの酸素分圧が15体積%以上であり、
前記酸化物の欠陥密度は7.5×1015cm-3以下、移動度は15cm2/Vs以上を満足することを特徴とする薄膜トランジスタの半導体層用酸化物。 - 前記酸化物は、酸素を除く全金属元素に対する各金属元素の含有量(原子%)をそれぞれ、[In]、[Zn]、および[Sn]としたとき、以下の関係を満足する請求項1に記載の半導体層用酸化物。
1≦[In]、50≦[Zn]≦95、1≦[Sn]≦30 - 前記酸素分圧が40体積%以下である請求項1または2に記載の半導体層用酸化物。
- 請求項3に記載の半導体層用酸化物を薄膜トランジスタの半導体層に備えた薄膜トランジスタ。
- 請求項4に記載の薄膜トランジスタを備えた表示装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020157027525A KR102230550B1 (ko) | 2013-03-08 | 2014-02-27 | 박막 트랜지스터의 반도체층용 산화물, 박막 트랜지스터 및 표시 장치 |
CN201480013007.5A CN105247684B (zh) | 2013-03-08 | 2014-02-27 | 用于薄膜晶体管的半导体层的氧化物、薄膜晶体管以及显示装置 |
US14/392,369 US9583633B2 (en) | 2013-03-08 | 2014-02-27 | Oxide for semiconductor layer of thin film transistor, thin film transistor and display device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-047347 | 2013-03-08 | ||
JP2013047347A JP2014175503A (ja) | 2013-03-08 | 2013-03-08 | 薄膜トランジスタの半導体層用酸化物、薄膜トランジスタおよび表示装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014136659A1 true WO2014136659A1 (ja) | 2014-09-12 |
Family
ID=51491178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2014/054958 WO2014136659A1 (ja) | 2013-03-08 | 2014-02-27 | 薄膜トランジスタの半導体層用酸化物、薄膜トランジスタおよび表示装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9583633B2 (ja) |
JP (1) | JP2014175503A (ja) |
KR (1) | KR102230550B1 (ja) |
CN (1) | CN105247684B (ja) |
TW (1) | TWI529134B (ja) |
WO (1) | WO2014136659A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9583633B2 (en) | 2013-03-08 | 2017-02-28 | Samsung Display Co., Ltd. | Oxide for semiconductor layer of thin film transistor, thin film transistor and display device |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017090584A1 (ja) | 2015-11-25 | 2017-06-01 | 株式会社アルバック | 薄膜トランジスタ、酸化物半導体膜及びスパッタリングターゲット |
KR20210099706A (ko) | 2020-02-04 | 2021-08-13 | 삼성디스플레이 주식회사 | 화소 및 표시장치 |
KR102525518B1 (ko) | 2021-05-10 | 2023-04-26 | 한국화학연구원 | 인돌 화합물, 이를 포함하는 페로브스카이트 화합물 및 이를 함유한 페로브스카이트 전자소자 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008243928A (ja) * | 2007-03-26 | 2008-10-09 | Idemitsu Kosan Co Ltd | 非晶質酸化物半導体薄膜、その製造方法、薄膜トランジスタの製造方法、電界効果型トランジスタ、発光装置、表示装置及びスパッタリングターゲット |
JP2012104809A (ja) * | 2010-10-12 | 2012-05-31 | Idemitsu Kosan Co Ltd | 半導体薄膜、薄膜トランジスタ及びその製造方法 |
JP2012164963A (ja) * | 2010-11-26 | 2012-08-30 | Kobe Steel Ltd | 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ |
JP2012238678A (ja) * | 2011-05-10 | 2012-12-06 | Idemitsu Kosan Co Ltd | 薄膜トランジスタ |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2585071A1 (en) * | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Field effect transistor employing an amorphous oxide |
KR101468594B1 (ko) * | 2008-07-31 | 2014-12-04 | 삼성전자주식회사 | 산화물 반도체 및 이를 포함하는 박막 트랜지스터 |
JP5438011B2 (ja) | 2008-08-27 | 2014-03-12 | 出光興産株式会社 | スパッタリングターゲット及びそれからなる酸化物半導体薄膜 |
CN102132414B (zh) * | 2008-08-27 | 2013-05-22 | 出光兴产株式会社 | 场效应型晶体管、其制造方法和溅射靶 |
KR20120106766A (ko) | 2009-11-20 | 2012-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
JP5569780B2 (ja) * | 2010-02-18 | 2014-08-13 | 国立大学法人東京農工大学 | 薄膜トランジスタの製造方法 |
KR101741732B1 (ko) | 2010-05-07 | 2017-05-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
JP5645737B2 (ja) * | 2011-04-01 | 2014-12-24 | 株式会社神戸製鋼所 | 薄膜トランジスタ構造および表示装置 |
US8716073B2 (en) * | 2011-07-22 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing oxide semiconductor film and method for manufacturing semiconductor device |
KR101963226B1 (ko) * | 2012-02-29 | 2019-04-01 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
JP6134230B2 (ja) * | 2012-08-31 | 2017-05-24 | 株式会社神戸製鋼所 | 薄膜トランジスタおよび表示装置 |
JP2014175503A (ja) | 2013-03-08 | 2014-09-22 | Kobe Steel Ltd | 薄膜トランジスタの半導体層用酸化物、薄膜トランジスタおよび表示装置 |
JP2014175504A (ja) * | 2013-03-08 | 2014-09-22 | Kobe Steel Ltd | 薄膜トランジスタの半導体層用酸化物、薄膜トランジスタおよび表示装置 |
-
2013
- 2013-03-08 JP JP2013047347A patent/JP2014175503A/ja not_active Ceased
-
2014
- 2014-02-27 KR KR1020157027525A patent/KR102230550B1/ko active IP Right Grant
- 2014-02-27 US US14/392,369 patent/US9583633B2/en active Active
- 2014-02-27 WO PCT/JP2014/054958 patent/WO2014136659A1/ja active Application Filing
- 2014-02-27 CN CN201480013007.5A patent/CN105247684B/zh active Active
- 2014-03-07 TW TW103107891A patent/TWI529134B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008243928A (ja) * | 2007-03-26 | 2008-10-09 | Idemitsu Kosan Co Ltd | 非晶質酸化物半導体薄膜、その製造方法、薄膜トランジスタの製造方法、電界効果型トランジスタ、発光装置、表示装置及びスパッタリングターゲット |
JP2012104809A (ja) * | 2010-10-12 | 2012-05-31 | Idemitsu Kosan Co Ltd | 半導体薄膜、薄膜トランジスタ及びその製造方法 |
JP2012164963A (ja) * | 2010-11-26 | 2012-08-30 | Kobe Steel Ltd | 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ |
JP2012238678A (ja) * | 2011-05-10 | 2012-12-06 | Idemitsu Kosan Co Ltd | 薄膜トランジスタ |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9583633B2 (en) | 2013-03-08 | 2017-02-28 | Samsung Display Co., Ltd. | Oxide for semiconductor layer of thin film transistor, thin film transistor and display device |
Also Published As
Publication number | Publication date |
---|---|
JP2014175503A (ja) | 2014-09-22 |
KR20150127652A (ko) | 2015-11-17 |
KR102230550B1 (ko) | 2021-03-22 |
TWI529134B (zh) | 2016-04-11 |
TW201500286A (zh) | 2015-01-01 |
CN105247684B (zh) | 2018-10-19 |
US20160211384A1 (en) | 2016-07-21 |
US9583633B2 (en) | 2017-02-28 |
CN105247684A (zh) | 2016-01-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5977569B2 (ja) | 薄膜トランジスタ構造、ならびにその構造を備えた薄膜トランジスタおよび表示装置 | |
JP6043244B2 (ja) | 薄膜トランジスタ | |
JP6326270B2 (ja) | 薄膜トランジスタおよびその製造方法 | |
JP5718072B2 (ja) | 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ | |
WO2012091126A1 (ja) | 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ | |
JP6134230B2 (ja) | 薄膜トランジスタおよび表示装置 | |
WO2011132644A1 (ja) | 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ | |
JP2013070010A (ja) | 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ | |
JP2013254948A (ja) | 薄膜トランジスタおよび表示装置 | |
JP2012164963A (ja) | 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ | |
JP5722293B2 (ja) | 薄膜トランジスタ | |
WO2014136659A1 (ja) | 薄膜トランジスタの半導体層用酸化物、薄膜トランジスタおよび表示装置 | |
WO2014136660A1 (ja) | 薄膜トランジスタの半導体層用酸化物、薄膜トランジスタおよび表示装置 | |
JP2013207100A (ja) | 薄膜トランジスタ | |
JP6753969B2 (ja) | 酸化物半導体薄膜、薄膜トランジスタおよびスパッタリングターゲット | |
WO2021124963A1 (ja) | 酸化物半導体薄膜、薄膜トランジスタ及びスパッタリングターゲット | |
WO2014136661A1 (ja) | 薄膜トランジスタの半導体層用酸化物、薄膜トランジスタおよび表示装置 | |
JP2014067856A (ja) | 薄膜トランジスタの酸化物半導体層の製造方法 | |
JP2022076351A (ja) | 酸化物半導体層を有する薄膜トランジスタ及びスパッタリングターゲット |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14761141 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14392369 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 20157027525 Country of ref document: KR Kind code of ref document: A |
|
32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 08/02/2016) |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 14761141 Country of ref document: EP Kind code of ref document: A1 |