WO2014134883A1 - 透明薄膜及其制作方法、显示用基板及显示装置 - Google Patents

透明薄膜及其制作方法、显示用基板及显示装置 Download PDF

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Publication number
WO2014134883A1
WO2014134883A1 PCT/CN2013/077045 CN2013077045W WO2014134883A1 WO 2014134883 A1 WO2014134883 A1 WO 2014134883A1 CN 2013077045 W CN2013077045 W CN 2013077045W WO 2014134883 A1 WO2014134883 A1 WO 2014134883A1
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Prior art keywords
sub
increasing
layer
transparent film
substrate
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PCT/CN2013/077045
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English (en)
French (fr)
Inventor
冀新友
王德帅
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北京京东方光电科技有限公司
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Publication of WO2014134883A1 publication Critical patent/WO2014134883A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133502—Antiglare, refractive index matching layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate

Definitions

  • Transparent film manufacturing method thereof, display substrate and display device
  • Embodiments of the present invention relate to the field of display technology, and in particular, to a transparent film, a method for fabricating the same, a substrate for display, and a display device. Background technique
  • the existing display includes an array substrate.
  • the array substrate includes a substrate 1 and a gate line 2, a data line 4, and a common electrode line 6 disposed on the substrate 1.
  • a region surrounded by the line 2 and the data line 4 is referred to as a pixel region, and a device such as a thin film transistor 3 is disposed in the pixel region, and a region other than the device such as the thin film transistor 3 in the pixel region is a display region.
  • a pixel region A region surrounded by the line 2 and the data line 4 is referred to as a pixel region, and a device such as a thin film transistor 3 is disposed in the pixel region, and a region other than the device such as the thin film transistor 3 in the pixel region is a display region.
  • Embodiments of the present invention provide a transparent film, a method for fabricating the same, a substrate for display, and a display device, wherein the transparent film includes at least three sub-layers, and refractive indices of the at least three sub-layers are sequentially changed, such that the transparent film The transmission rate is higher.
  • Embodiments of the present invention also provide a transparent film comprising at least three sub-layers laminated, the refractive indices of the at least three sub-layers being sequentially increased or decreased.
  • Embodiments of the present invention also provide a method for fabricating a transparent film, including:
  • An embodiment of the present invention further provides a substrate for display, including: a substrate and a plurality of pixel structures disposed on the substrate; the pixel structure is divided into a light transmitting region and a non-light transmitting region, and the pixel structure
  • the portion of the light transmissive region includes at least one of the above transparent films.
  • the embodiment of the invention further provides a substrate for display, comprising: a substrate and a plurality of pixel structures disposed on the substrate; the pixel structure is divided into a light transmitting region and a non-light transmitting region, and the pixel structure is The portion located in the light transmitting region includes a plurality of the above transparent films, and refractive indices of at least three adjacent transparent films of the plurality of transparent films are sequentially changed.
  • the embodiment of the invention further provides a display device comprising the above-mentioned display substrate.
  • FIG. 1 is a partial top plan view of an array substrate in the prior art
  • FIG. 2 is a cross-sectional structural view of the array substrate of FIG. 1 taken along line a-a';
  • 3 is a transparent film according to an embodiment of the present invention.
  • FIG. 4 is a cross-sectional structural view of an array substrate according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of a method for fabricating a transparent film according to an embodiment of the present invention.
  • FIG. 6 is a schematic view of a method for fabricating a gate insulating film according to an embodiment of the present invention.
  • n4 When a medium having a refractive index of n4 is added between a medium having a refractive index of n1 and a refractive index of n3, a medium having a refractive index of n5 is added between the medium having a refractive index of n2 and a refractive index of n3, wherein n4 is between Between nl and n3, n5 is between n2 and n3.
  • embodiments of the present invention provide a transparent film comprising at least three sub-layers laminated, the refractive indices of the at least three sub-layers being sequentially increased or decreased.
  • the transparent film 10 includes three sub-layers, a first sub-layer 101, a second sub-layer 102, and a third sub-layer 103, respectively.
  • the transmittance of the first sub-layer 101 is greater than the transmittance of the third sub-layer 103, and the transmittance of the second sub-layer 102 is between the transmittances of the first sub-layer 101 and the third sub-layer 103. between.
  • the transmittance of light through the transparent film is improved.
  • the above transparent film can be used as a gate insulating layer or a passivation layer on an array substrate in a display device.
  • the "film” refers to a film formed by deposition or the like. If the “film” does not require a patterning process throughout the manufacturing process, the “film” may also be referred to as a "layer”, such as a gate insulating layer; if the "film” still requires a patterning process throughout the fabrication process, then the composition is Process Formerly known as “film”, the patterning process is called “layer”. The "layer” after the patterning process contains at least one "pattern". For example, the passivation layer is formed by depositing a film, and then forming a pattern of via holes or the like on the film by a patterning process.
  • the gate insulating layer for example, a transparent film made of silicon nitride
  • a gate including at least three silicon nitride sub-layers is opposed to the existing gate insulating layer.
  • the transmittance of the insulating layer is increased, thereby improving the utilization of light, and the brightness of the display panel can be improved by being applied to a display panel.
  • the transmittance of the passivation layer including at least three silicon nitride sublayers is improved with respect to the existing passivation layer, Further, the utilization of light is improved, and the brightness of the display panel can be improved by being applied to the display panel.
  • one of the passivation layer and the gate insulating layer may be the above transparent film, or both the passivation layer and the gate insulating layer may be the transparent film, for example, as shown in FIG. 4 .
  • the gate insulating layer 7 and the passivation layer 8 shown are each a transparent film as shown in FIG.
  • the transparent film can also be made of other transparent materials than silicon nitride.
  • the transparent film provided by the embodiment of the present invention is not limited to the gate insulating film and the passivation film, and may be other films in the display field or films in other fields. For example, it may be a pixel electrode film or a common electrode film on a color filter substrate or the like.
  • An embodiment of the present invention further provides a method for fabricating a transparent film, as shown in FIG. 5, comprising: Step S101: setting initial process conditions to form an initial sub-layer of the transparent film.
  • the process conditions for forming the transparent film are different depending on the film of different materials and different forming methods.
  • the embodiment of the present invention will be described in detail by taking a silicon nitride film formed by PECVD as an example.
  • the process conditions include: generating temperature, generating pressure, power, and gas flow rate.
  • the initial process conditions are set to include: setting an initial generation temperature, generating pressure, power, and gas flow.
  • the gas flow rate affects the mass ratio of each chemical element of the substance forming the transparent film, and the amount of the generated gas is different, and the content of each chemical element in the substance forming the transparent film is also different. And for different substances, the gases they generate are also different. For example, depositing silicon nitride is performed by ionizing silane and ammonia gas respectively to form a plasma, and forming a silicon nitride film on the substrate by reacting to form silicon nitride. The generated gas is then silane and ammonia, wherein the silane provides silicon and the ammonia provides nitrogen.
  • the Si/N (silicon to nitrogen ratio) forming the silicon nitride film can be controlled by controlling the gas flow rate.
  • Step S102 Adjust process conditions to form at least two subsequent sub-layers whose refractive indexes are sequentially changed based on the initial sub-layer.
  • the process conditions have different effects on the transmittance of films of different materials, which requires specific analysis according to the specific conditions of the film.
  • the embodiment of the present invention will be described by taking the influence of the above process conditions on the magnitude of the refractive index of the silicon nitride film.
  • the generation temperature is inversely proportional to the refractive index of the silicon nitride transparent film, that is, the higher the generation temperature, the smaller the refractive index of the silicon nitride transparent film, and vice versa, the lower the generation temperature is
  • the refractive index of the silicon nitride transparent film is larger;
  • the generation pressure is proportional to the refractive index of the silicon nitride transparent film, that is, the larger the generation pressure, the larger the refractive index of the silicon nitride transparent film, and vice versa.
  • the refractive indices of the respective sub-layers may be sequentially changed, or the refractive index may be sequentially increased, or the refractive index may be sequentially decreased.
  • the process conditions are adjusted to form at least two subsequent sub-layers that vary in refractive index based on the initial sub-layer, including:
  • One or more subsequent sub-layers are formed one or more times using at least one of an elevated generation temperature, a reduced generation pressure, and a reduced power.
  • adjusting the process conditions to form at least two subsequent sub-layers whose refractive indices are sequentially changed based on the initial sub-layer includes:
  • One or more subsequent sub-layers are formed one or more times by at least one of reducing the generation temperature, increasing the generation pressure, and increasing the power.
  • the flow rate of the control gas is such that the content of each chemical element in the substance of the resulting transparent film is different, and the influence of the refractive index is also different. Moreover, the content of each chemical element in the transparent film formed by different substances has different effects on the refractive index thereof.
  • silicon nitride is taken as an example. Differently obtained by controlling the gas flow rate of silane and ammonia which form silicon nitride The silicon to ammonia ratio, and the refractive index of the silicon nitride transparent film is proportional to Si/N. That is, the larger the Si/ is, the larger the refractive index of the silicon nitride transparent film is; the smaller the Si/N is, the smaller the refractive index of the silicon nitride transparent film is.
  • the process conditions are adjusted to form at least two subsequent sub-layers whose refractive indices are sequentially changed based on the initial sub-layer:
  • One or more subsequent sub-layers are formed one or more times using at least one of increasing the formation temperature, decreasing the generation pressure, reducing the power, and reducing the gas flow of the silane relative to the ammonia gas.
  • the gas flow rate for reducing the silane relative to the ammonia gas may be a gas flow rate for reducing the silane or a gas flow rate for increasing the ammonia gas, and the Si/N ratio may be lowered.
  • adjusting the process conditions to form at least two subsequent sub-layers whose refractive indices are sequentially changed based on the initial sub-layer includes:
  • One or more subsequent sub-layers are formed one or more times using at least one of a mode of reducing the generation temperature, increasing the generation pressure, increasing the power, and increasing the gas flow of the silane relative to the ammonia gas.
  • the gas flow rate of the elevated silane relative to the ammonia gas may be a gas flow rate for increasing the silane or a gas flow rate for reducing the ammonia gas, as long as the Si/N ratio is increased.
  • the refractive index of each sub-layer decreases in order from bottom to top.
  • the refractive index of each sublayer increases from bottom to top.
  • the "upper” and “lower” are based on the order in which the sublayers are made. For example, the first sublayer formed is the lower sublayer, and the later sublayer is the upper sublayer.
  • An embodiment of the present invention further provides a method for fabricating a gate insulating film. As shown in FIG. 6, the method includes the following steps: Step S201: setting an initial generation temperature, a generation pressure, a power, and a gas flow rate to form an initial portion of the gate insulating film. Floor.
  • Step S202 forming a second sub-layer by using at least one of adjusting the generation temperature, decreasing the generation pressure, reducing the power, and reducing the gas flow rate of the silane relative to the ammonia gas.
  • the gas flow rate of the silane relative to the ammonia gas may be adjusted, or one of the plurality of modes may be adjusted at the same time, so that the refractive index of the formed second sub-layer is greater than the refractive index of the first sub-layer.
  • Step S203 forming a third sub-layer by using at least one of adjusting the generation temperature, decreasing the generation pressure, reducing the power, and reducing the gas flow rate of the silane relative to the ammonia gas.
  • step S202 increasing the generation temperature, lowering the generation pressure, reducing the power, and reducing the gas flow rate of the silane relative to the ammonia gas may be adjusted to one of them, or may be adjusted at the same time.
  • the refractive index of the formed third sub-layer is greater than the refractive index of the second sub-layer.
  • a subsequent sub-layer can be formed, and the gate insulating film formed includes at least three sub-layers, and the refractive indices of the sub-layers are sequentially increased, and the transmittance is higher than that of the existing gate insulating film. .
  • the present invention provides a substrate for display, comprising: a substrate and a plurality of pixel structures disposed on the substrate; the pixel structure is divided into a light transmitting region and a non-light transmitting region, and the pixel structure is located in the
  • the portion of the light transmissive region includes at least one transparent film, wherein at least one of the transparent films is the transparent film provided by the above embodiment of the present invention.
  • a transparent film partially located in the light transmitting region may also extend to the non-light transmitting region, that is, the transparent film is located on the substrate to cover the light transmitting region and the non-light transmitting region.
  • the display substrate can be applied to a liquid crystal display device or to an organic light emitting diode display device.
  • the display substrate is an array substrate, and one of the transparent films in each pixel structure is a portion of a gate insulating layer or a portion of a passivation layer.
  • the gate insulating layer 7 and the passivation layer 8 on the array substrate each include at least three sub-layers.
  • the transparent film may also be a pixel electrode layer on the array substrate.
  • the display substrate may be a color filter substrate, and the transparent film is a common electrode layer on the color filter substrate or the like located in the light transmission region, and the light passes through the respective films which cause light loss.
  • Embodiments of the present invention provide a substrate for display, including: a substrate and a plurality of pixel structures disposed on the substrate; the pixel structure is divided into a light transmitting region and a non-light transmitting region, and the pixel structure is located
  • the portion of the light transmissive region includes a plurality of transparent films, and refractive indices of at least three adjacent transparent films of the plurality of transparent films are sequentially changed.
  • the sequential changes in the refractive index may be sequentially decreased by ⁇ according to the arrangement order, or may be sequentially increased in the order of arrangement.
  • the substrate may also be a transparent film. As shown in FIG.
  • the array substrate is sequentially provided with a gate insulating layer 7, a passivation layer 8, and a pixel electrode 5 on the substrate 1, and the gate insulating layer 7 is disposed in each pixel structure.
  • the passivation layer 8 is between the substrate 1.
  • the refractive indices of the at least three adjacent transparent films are sequentially changed, and the refractive index of the gate insulating layer may be between the refractive index of the substrate and the refractive index of the passivation layer, that is, the substrate and the gate.
  • the refractive indices of the insulating layer and the passivation layer are sequentially changed.
  • the light transmittance of the array substrate can be improved, and the brightness of the display panel is improved under the same illumination intensity.
  • the refractive indices of the at least three adjacent transparent films may be sequentially changed.
  • the refractive indices of the adjacent gate insulating layers, the passivation layers, and the pixel electrodes may be sequentially changed.
  • the refractive indices of the respective films from the lowest layer to the topmost layer are sequentially changed, that is, the refractive indices of the substrate, the gate insulating layer, the passivation layer, and the pixel electrode may be sequentially changed.
  • a transparent film partially located in the light transmitting region may also extend to the non-light transmitting region, that is, the transparent film is located on the substrate to cover the light transmitting region and the non-light transmitting region.
  • the display substrate can be applied to a liquid crystal display device or to an organic light emitting diode display device.
  • the embodiment of the invention provides a display device, which comprises the array substrate provided by the embodiment of the invention.
  • the display device may be a display device such as a liquid crystal display, an electronic paper, an OLED (Organic Light-Emitting Diode) display, or any display-enabled product such as a television, a digital camera, a mobile phone, a tablet, or the like including the display device. Or parts.

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Abstract

提供一种透明薄膜及其制作方法、显示用基板及显示装置。一种透明薄膜（10），包括叠层的至少三个子层（101，102，103），所述至少三个子层（101，102，103）的折射率各不相同，且位于最底层和最顶层之间的任一子层的折射率介于与其相邻的两个子层的折射率之间。

Description

透明薄膜及其制作方法、 显示用基板及显示装置 技术领域
本发明的实施例涉及显示技术领域， 尤其涉及一种透明薄膜及其制作方 法、 显示用基板及显示装置。 背景技术
显示器作为显示工具， 在人们的日常生活中扮演着越来越重要的角色。 且随着技术的不断更新， 人们对显示器的要求也越来越高。 例如人们要求其 具有高亮度、 宽视角、 高分辨率等。
现有技术中， 一种提高显示器亮度的方法为提高光的利用效率。 现有的 显示器， 包括阵列基板， 如图 1、 图 2所示， 所述阵列基板包括基板 1 以及 设置在所述基板 1上的栅线 2、 数据线 4以及公共电极线 6, 其中， 栅线 2 和数据线 4围成的区域称为像素区， 在像素区设置有薄膜晶体管 3等器件， 像素区除薄膜晶体管 3等器件之外的区域为显示区。 如图 2所示， 光线（如 图中箭头所示 ) 穿过显示区要依次经过基板 1以及设置在基板 1上面的栅绝 缘层 7、 钝化层 8和像素电极层 5。 而要想提高光的利用效率就要提高基板、 栅绝缘层、 钝化层以及像素电极层等的透过率， 以减小光的损失。 发明内容
本发明的实施例提供一种透明薄膜及其制作方法、 显示用基板及显示装 置， 所述透明薄膜包括至少三个子层， 且所述至少三个子层的折射率依次变 化， 使得所述透明薄膜的透过率更高。
本发明的实施例还提供了一种透明薄膜， 包括层叠的至少三个子层， 所 述至少三个子层的折射率依次增大或减小。
本发明的实施例还提供了一种透明薄膜的制作方法， 包括：
设置初始工艺条件， 形成所述透明薄膜的初始子层；
调节所述工艺条件， 形成以所述初始子层为基准、 折射率依次变化的至 少两个后续子层。 本发明的实施例还提供了一种显示用基板， 包括： 基板以及设置在所述 基板上的多个像素结构； 所述像素结构分为透光区和非透光区， 且所述像素 结构中位于所述透光区的部分包括至少一个上述的透明薄膜。
本发明实施例还提供了一种显示用基板， 包括： 基板以及设置在所述基 板上的多个像素结构； 所述像素结构分为透光区和非透光区， 且所述像素结 构中位于所述透光区的部分包括多个上述的透明薄膜， 且所述多个透明薄膜 中至少三个相邻的透明薄膜的折射率依次变化。
本发明实施例还提供了一种显示装置， 包括上述的显示用基板。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例的附图作 筒单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图 1为现有技术中的一种阵列基板局部俯视结构示意图；
图 2为图 1所示阵列基板沿 a-a' 线的剖视结构示意图；
图 3为本发明实施例提供的透明薄膜；
图 4为本发明实施例提供的阵列基板的剖视结构示意图；
图 5为本发明实施例提供的制作透明薄膜的方法示意图；
图 6为本发明实施例提供的制作栅绝缘薄膜的方法示意图； 附图标记：
1-基板； 2-栅线； 3-薄膜晶体管； 4-数据线； 5,5， -像素电极层； 6-公共 电极线； 7,7， -栅绝缘层； 8,8， -钝化层； 10-透明薄膜； 101-第一子层； 102- 第二子层； 103-第三子层。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图，对本发明实施例的技术方案进行清楚、 完整地描述。显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。
需要说明的是，当光从折射率为 nl的介质入射至折射率为 n2的介质时， 其在界面处会同时发生光的反射和折射， 进而形成光的损失。 根据光学基本 定理菲涅尔方程， 其反射率 R以及透过率 T与介质的折射率的关系为：
R = (n\ - n2) 2 T = 1 R = nlnl
~ (n\ + n2) 2 ~ ~ (n\ + n2)2 现 4叚设 nl=2, n2=l ,即光从折射率为 2的介质射入折射率为 1的介质中， 经计算可以得出 R=ll.l%, T=88.9%, 其中反射率和折射率为经过计算之后 的近似值。
当在折射率为 nl和折射率为 n2的介质之间加入折射率为 n3的介质，其 中， n3介于 nl和 n2之间。例如， n3=1.5 ,经计算可以得出 R=5.9%, T=94.1%, 即其透过率提高了 5.2%。
当在折射率为 nl和折射率为 n3的介质之间加入折射率为 n4的介质，在 折射率为 n2和折射率为 n3的介质之间加入折射率为 n5的介质， 其中， n4 介于 nl和 n3之间， n5介于 n2和 n3之间。 例如， n4=1.75 , n5=1.25 , 经计 算可以得出 R=3.0%, T=97.0%, 即其透过率提高了 8.1%。
由此可以得出结论， 当光线经过不同折射率的介质时， 由于反射和折射， 会有光的损失， 但通过在不同折射率的介质之间加入折射率介于两个介质之 间的介质， 可以提高光的透过率， 进而提高光的利用率。
基于上面的理论， 本发明的实施例提供了一种透明薄膜， 包括层叠的至 少三个子层， 所述至少三个子层的折射率依次增大或减小。
如图 3所示， 在一个示例中， 透明薄膜 10包括三个子层， 分别为第一子 层 101、第二子层 102和第三子层 103。 其中， 第一子层 101的透过率大于第 三子层 103的透过率， 且第二子层 102的透过率介于第一子层 101和第三子 层 103的透过率之间。 这样通过在第一子层和第三子层之间设置第二子层， 提高了光通过该透明薄膜的透过率。
上述透明薄膜可以用作显示装置中阵列基板上的栅绝缘层或钝化层。 本 发明实施例中， "薄膜"是指利用沉积等方法制作出的一层薄膜。若在整个制 作过程当中该 "薄膜" 无需构图工艺， 则该 "薄膜"还可以称为 "层"， 例如 栅绝缘层； 若在整个制作过程当中该 "薄膜" 还需构图工艺， 则在构图工艺 前称为 "薄膜"， 构图工艺后称为 "层"。 经过构图工艺后的 "层" 中包含至 少一个 "图案"。 例如钝化层是通过沉积形成一层薄膜，再经过构图工艺在所 述薄膜上形成过孔等图案。
当将上述本发明实施例提供的透明薄膜用作所述栅绝缘层（例如用氮化 硅制成透明薄膜） 时， 相对于现有栅绝缘层， 由于包括至少三个氮化硅子层 的栅绝缘层的透过率提高， 进而提高光的利用率， 应用于显示面板中可以提 高显示面板的亮度。
同样地， 当将上述本发明实施例提供的透明薄膜用作所述钝化层时， 相 对于现有钝化层， 由于包括至少三个氮化硅子层的钝化层的透过率提高， 进 而提高光的利用率， 应用于显示面板中可以提高显示面板的亮度。
需要说明的是， 在同一个阵列基板中， 可以是钝化层和栅绝缘层之一采 用上述透明薄膜，也可以是钝化层和栅绝缘层二者采用上述透明薄膜，例如， 如图 4所示中的栅绝缘层 7， 和钝化层 8， 均采用图 3所示的透明薄膜。在其 他实施例中， 透明薄膜也可采用除氮化硅外的其他透明材料制成。 当然， 本 发明实施例提供的透明薄膜也不仅仅局限于栅绝缘薄膜和钝化薄膜， 也可以 是显示领域的其他薄膜或者其他领域的薄膜。 例如还可以是像素电极薄膜或 彩膜基板上的公共电极薄膜等。
本发明的实施例还提供了一种透明薄膜的制作方法，如图 5所示， 包括： 步骤 S101、 设置初始工艺条件， 形成所述透明薄膜的初始子层。
其中， 形成所述透明薄膜的工艺条件根据不同材料的薄膜和不同的形成 方法各有不同。 本发明实施例仅以 PECVD形成氮化硅薄膜为例进行详细说 明。 具体的， 对于以 PECVD形成氮化硅薄膜， 所述工艺条件包括： 生成温 度、 生成压力、 功率以及气体流量。 则所述设置初始工艺条件包括： 设置初 始的生成温度、 生成压力、 功率以及气体流量。
其中， 所述气体流量影响形成所述透明薄膜的物质的各化学元素的质量 比， 且生成气体的量不同， 形成所述透明薄膜的物质中的各化学元素的含量 也不同。 且对于不同物质， 其生成的气体也不同。 例如沉积氮化硅是分别见 硅烷和氨气电离， 形成等离子体， 通过反应形成氮化硅在基板上形成氮化硅 薄膜。 则所述生成气体即为硅烷和氨气， 其中， 硅烷提供硅元素， 氨气提供 氮元素。 通过控制气体流量可以控制形成氮化硅薄膜的 Si/N (硅氮比）。 步骤 S102、 调节工艺条件， 形成以所述初始子层为基准、 折射率依次变 化的至少两个后续子层。
其中， 工艺条件对不同材料的薄膜的透过率大小的影响也不同， 这就需 要根据薄膜的具体情况进行具体分析。 本发明实施例以上述工艺条件对氮化 硅薄膜的折射率的大小影响为例进行说明。
具体的， 所述生成温度与所述氮化硅透明薄膜折射率成反比， 即生成温 度越高， 则所述氮化硅透明薄膜的折射率越小， 反之， 生成温度越低， 则所 述氮化硅透明薄膜的折射率越大； 所述生成压力与所述氮化硅透明薄膜折射 率成正比， 即生成压力越大， 则所述氮化硅透明薄膜的折射率越大， 反之， 生成压力越小， 则所述氮化硅透明薄膜的折射率越小； 所述功率与所述氮化 硅透明薄膜折射率成正比， 即功率越大， 则所述氮化硅透明薄膜的折射率越 大， 反之， 功率越小， 则所述氮化硅透明薄膜的折射率越小。
在该步骤中， 各个子层的折射率依次变化可以是折射率依次增大， 也可 以是折射率依次减小。
在一个示例中， 调节工艺条件， 形成以所述初始子层为基准、 折射率依 次变化的至少两个后续子层包括：
采用升高生成温度、 降低生成压力以及降低功率中至少一种调节方式， 形成第二子层；
一次或多次采用升高生成温度、 降低生成压力以及降低功率中至少一种 调节方式， 形成一个或多个后续子层。
或者， 在另一个示例中， 调节工艺条件， 形成以所述初始子层为基准、 折射率依次变化的至少两个后续子层包括：
采用降低生成温度、 升高生成压力以及升高功率中至少一种调节方式， 形成第二子层；
一次或多次采用降低生成温度、 升高生成压力以及升高功率中至少一种 调节方式， 形成一个或多个后续子层。
对于相同的物质， 控制气体流量使生成的所述透明薄膜的物质中的各化 学元素的含量不同， 其折射率的影响也不相同。 且不同的物质形成的透明薄 膜中各化学元素的含量对其折射率的影响也不相同。 本发明实施例中仅以氮 化硅为例。 通过控制生成氮化硅的硅烷和氨气的气体流量， 可以得到不同的 硅氨比， 且所述氮化硅透明薄膜折射率与 Si/N成正比。 即 Si/ 越大， 氮化 硅透明薄膜的折射率越大； Si/N越小， 氮化硅透明薄膜的折射率越小。
在一个示例中， 对于通过硅烷和氨气形成的氮化硅透明薄膜， 调节工艺 条件， 形成以所述初始子层为基准、 折射率依次变化的至少两个后续子层包 括：
采用升高生成温度、 降低生成压力、 降低功率以及降低硅烷相对于氨气 的气体流量中至少一种调节方式， 形成第二子层；
一次或多次采用升高生成温度、 降低生成压力、 降低功率以及降低硅烷 相对于氨气的气体流量中至少一种调节方式， 形成一个或多个后续子层。
其中， 所述降低硅烷相对于氨气的气体流量可以是降低硅烷的气体流量 也可以是增大氨气的气体流量， 只要降低 Si/N比即可。
或者， 在另一个示例中， 调节工艺条件， 形成以所述初始子层为基准、 折射率依次变化的至少两个后续子层包括：
采用降低生成温度、 升高生成压力、 升高功率以及升高硅烷相对于氨气 的气体流量中至少一种调节方式， 形成第二子层；
一次或多次采用降低生成温度、 升高生成压力、 升高功率以及升高硅烷 相对于氨气的气体流量中至少一种调节方式， 形成一个或多个后续子层。
其中， 所述升高硅烷相对于氨气的气体流量可以是增大硅烷的气体流量 也可以是减小氨气的气体流量， 只要增大 Si/N比即可。
在本发明的实施例中， 对于基板上的栅绝缘层， 当栅绝缘层包括多个子 层时， 各子层的折射率从下至上依次减小。 对于基板上的钝化层， 当钝化层 包括多个子层时， 各子层的折射率从下至上依次增大。 所述 "上"、 "下" 以 制作子层的先后顺序为准， 例如最先形成的子层为在下的子层， 后面形成的 子层为在上的子层。
本发明的实施例还提供一种制作栅绝缘薄膜的方法，如图 6所示， 包括： 步骤 S201、 设置初始的生成温度、 生成压力、 功率以及气体流量， 形成 所述栅绝缘薄膜的初始子层。
步骤 S202、 采用升高生成温度、 降低生成压力、 降低功率以及降低硅烷 相对于氨气的气体流量中至少一种调节方式， 形成第二子层。
在初始工艺条件的基础上升高生成温度、 降低生成压力、 降低功率以及 降低硅烷相对于氨气的气体流量， 可以是调节其中的一种， 也可以同时调节 多种方式， 使形成的第二子层的折射率大于第一子层的折射率。
步骤 S203、 采用升高生成温度、 降低生成压力、 降低功率以及降低硅烷 相对于氨气的气体流量中至少一种调节方式， 形成第三子层。
同样的， 在步骤 S202 的工艺条件的基础上， 升高生成温度、 降低生成 压力、 降低功率以及降低硅烷相对于氨气的气体流量， 可以至调节其中的一 种， 也可以同时调节多种方式， 使形成的第三子层的折射率大于第二子层的 折射率。
这样以此类推， 还可以形成后续子层， 则形成的栅绝缘薄膜包括至少三 个子层， 且各子层的折射率依次增大， 相对于现有的栅绝缘薄膜， 其透过率 更高。
本发明实施例仅以制作栅绝缘薄膜为例进行详细说明， 制作其他透明薄 膜可以参照上述步骤， 在这里就不作赘述。
本发明提供了一种显示用基板， 包括： 基板以及设置在所述基板上的多 个像素结构； 所述像素结构分为透光区和非透光区， 且所述像素结构中位于 所述透光区的部分包括至少一个透明薄膜， 其中， 至少一个所述透明薄膜为 上述本发明实施例提供的透明薄膜。
需要说明的是， 部分位于所述透光区的透明薄膜， 其也可以延伸至非透 光区， 即所述透明薄膜位于所述基板上， 覆盖透光区和非透光区。 所述显示 用基板可以适用于液晶显示装置， 也可以适用于有机发光二极管显示装置。
可选的， 所述显示用基板为阵列基板， 每一像素结构中的一个所述透明 薄膜为栅绝缘层的部分， 或为钝化层的部分。 如图 4所示， 所述阵列基板上 的栅绝缘层 7， 和钝化层 8， 均包括至少三个子层。 当然， 所述透明薄膜还可 以是阵列基板上的像素电极层。 且所述显示用基板还可以是彩膜基板， 则所 述透明薄膜为彩膜基板上的公共电极层等位于透光区， 光线穿过会产生光损 失的各薄膜。
本发明实施例提供了一种显示用基板， 包括： 基板以及设置在所述基板 上的多个像素结构； 所述像素结构分为透光区和非透光区， 且所述像素结构 中位于所述透光区的部分包括多个透明薄膜， 且所述多个透明薄膜中至少三 个相邻的透明薄膜的折射率依次变化。 具体的， 折射率依次变化可以是依排列顺序依次减 '〗、也可以是依排列顺 序依次增大。 本发明实施例中， 所述基板也可以是一种透明薄膜。 则如图 4 所示， 所述阵列基板在基板 1上依次设置有栅绝缘层 7，、 钝化层 8， 和像素 电极 5，， 每一像素结构中所述栅绝缘层 7， 设置在所述钝化层 8， 和基板 1 之间。 所述至少三个相邻的透明薄膜的折射率依次变化， 可以是所述栅绝缘 层的折射率介于所述基板的折射率和所述钝化层的折射率之间， 即基板、 栅 绝缘层和钝化层的折射率依次变化。 可提高阵列基板光的透过率， 在相同光 照强度的情况下， 提高了显示面板的亮度。 所述至少三个相邻的透明薄膜的 折射率依次变化还可以是相邻设置的栅绝缘层、 钝化层和像素电极的折射率 依次变化。 当然， 也可以是从最低层至最顶层的各薄膜的折射率依次变化， 即还可以是基板、 栅绝缘层、 钝化层和像素电极的折射率依次变化。
需要说明的是， 部分位于所述透光区的透明薄膜， 其也可以延伸至非透 光区， 即所述透明薄膜位于所述基板上， 覆盖透光区和非透光区。 所述显示 用基板可以适用于液晶显示装置， 也可以适用于有机发光二极管显示装置。
本发明实施例提供了一种显示装置， 包括本发明实施例提供的所述阵列 基板。所述显示装置可以为液晶显示器、电子纸、OLED(Organic Light-Emitting Diode,有机发光二极管)显示器等显示器件以及包括这些显示器件的电视、 数 码相机、 手机、 平板电脑等任何具有显示功能的产品或者部件。
以上所述仅是本发明的示范性实施方式， 而非用于限制本发明的保护范 围， 本发明的保护范围由所附的权利要求确定。

Claims

权利要求书
1、一种透明薄膜， 包括层叠的至少三个子层， 所述至少三个子层的折射 率依次增大或减小。
2、根据权利要求 1所述的透明薄膜，其中形成所述透明薄膜的材料为氮 化硅。
3、 一种透明薄膜的制作方法， 包括：
设置初始工艺条件， 形成所述透明薄膜的初始子层；
调节所述工艺条件， 形成以所述初始子层为基准、 折射率依次变化的至 少两个后续子层。
4、 根据权利要求 3所述的制作方法， 其中所述设置初始工艺条件包括： 设置初始的生成温度、 生成压力、 功率以及气体流量。
5、根据权利要求 3所述的制作方法， 其中所述调节所述工艺条件， 形成 以所述初始子层为基准、 折射率依次变化的至少两个后续子层包括：
采用升高生成温度、 降低生成压力以及降低功率中至少一种调节方式， 形成第二子层；
一次或多次采用升高生成温度、 降低生成压力以及降低功率中至少一种 调节方式， 形成一个或多个后续子层；
或者，
采用降低生成温度、 升高生成压力以及升高功率中至少一种调节方式， 形成第二子层；
一次或多次采用降低生成温度、 升高生成压力以及升高功率中至少一种 调节方式， 形成一个或多个后续子层。
6、根据权利要求 3所述的制作方法， 其中调节所述工艺条件， 形成以所 述初始子层为基准、 折射率依次变化的至少两个后续子层包括：
采用升高生成温度、 降低生成压力、 降低功率以及降低硅烷相对于氨气 的气体流量中至少一种调节方式， 形成第二子层；
一次或多次采用升高生成温度、 降低生成压力、 降低功率以及降低硅烷 相对于氨气的气体流量中至少一种调节方式， 形成一个或多个后续子层； 或者， 采用降低生成温度、 升高生成压力、 升高功率以及升高硅烷相对于氨气 的气体流量中至少一种调节方式， 形成第二子层；
一次或多次采用降低生成温度、 升高生成压力、 升高功率以及升高硅烷 相对于氨气的气体流量中至少一种调节方式， 形成一个或多个后续子层。
7、一种显示用基板，包括：基板以及设置在所述基板上的多个像素结构； 所述像素结构分为透光区和非透光区， 且所述像素结构中位于所述透光区的 部分包括至少一个权利要求 1或 2所述的透明薄膜。
8、根据权利要求 7所述的显示用基板，其中所述显示用基板为阵列基板， 每一像素结构中的一个所述透明薄膜为栅绝缘层， 或为钝化层。
9、一种显示用基板，包括：基板以及设置在所述基板上的多个像素结构； 所述像素结构分为透光区和非透光区， 且所述像素结构中位于所述透光区的 部分包括多个权利要求 1或 2所述的透明薄膜， 其中所述多个透明薄膜中至 少三个相邻的透明薄膜的折射率依次变化。
10、 一种显示装置， 包括权利要求 7-9任一项所述的显示用基板。
PCT/CN2013/077045 2013-03-07 2013-06-09 透明薄膜及其制作方法、显示用基板及显示装置 WO2014134883A1 (zh)

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