WO2014187090A1 - 彩色滤光阵列基板及其制造方法、显示装置 - Google Patents

彩色滤光阵列基板及其制造方法、显示装置 Download PDF

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Publication number
WO2014187090A1
WO2014187090A1 PCT/CN2013/087388 CN2013087388W WO2014187090A1 WO 2014187090 A1 WO2014187090 A1 WO 2014187090A1 CN 2013087388 W CN2013087388 W CN 2013087388W WO 2014187090 A1 WO2014187090 A1 WO 2014187090A1
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Prior art keywords
layer
thin film
film transistor
dielectric
band pass
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PCT/CN2013/087388
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English (en)
French (fr)
Inventor
张洪术
邵喜斌
陈玉琼
李艳
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京东方科技集团股份有限公司
北京京东方显示技术有限公司
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Priority to US14/348,220 priority Critical patent/US9454034B2/en
Publication of WO2014187090A1 publication Critical patent/WO2014187090A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133521—Interference filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/02—Function characteristic reflective

Definitions

  • Color filter array substrate manufacturing method thereof, and display device
  • Embodiments of the present invention relate to the field of display technologies, and in particular, to a color filter array substrate, a method of manufacturing the same, and a display device. Background technique
  • the thin film transistor liquid crystal display comprises a thin film transistor array substrate, a color filter and a liquid crystal layer, wherein the color filter is a main component of the liquid crystal display and is used for realizing display of a color picture.
  • a color filter and a thin film transistor as a driving switch are formed on different substrates and located on both sides of the liquid crystal layer.
  • this arrangement causes a decrease in the aperture ratio of the display panel, thereby affecting Display panel brightness and picture quality.
  • the market demand for the aperture ratio and brightness of the display panel has increased, and the industry has developed a color filter directly on the array substrate (Color Filter On Array, called "COA").
  • the technology that is, the color filter and the thin film transistor are formed on a glass substrate, so that not only the aperture ratio of the display panel can be increased, the brightness of the display panel is increased, but also the color filter and the thin film transistor are formed on different substrates.
  • the array substrate of the liquid crystal display panel includes a gate line and a data line distributed transversely and vertically, and a plurality of pixel areas defined by the gate line and the data line, in the pixel area
  • a thin film transistor and a filter layer of a different color are formed. It is usually a red filter layer (R), a green filter layer (G) and a blue filter layer (B).
  • the filter layer is generally a color-resistive filter layer, which absorbs light to achieve the purpose of filtering, so that the utilization rate of light is very low, only about 30%. Summary of the invention
  • Embodiments of the present invention provide a color filter array substrate, a manufacturing method thereof, and a display device for solving the problem of low utilization of light by a filter layer of a color filter array substrate.
  • a color filter array substrate including a plurality of gate lines and a plurality of data lines distributed laterally and vertically, and a plurality of pixel regions defined by the gate lines and the data lines a region, each of the pixel regions includes a thin film transistor, wherein each of the pixel regions further includes a band pass filter layer, the band pass filter layer transmits light in a specific wavelength range, and reflects other wavelengths of light;
  • the band pass filter layer includes a first dielectric sublayer, a second dielectric sublayer, and a third dielectric sublayer; the second dielectric sublayer has different thicknesses in different pixel regions.
  • a display device a color filter array substrate as described above, is provided.
  • a method of fabricating a color filter array substrate includes forming a thin film transistor over a substrate substrate, and further comprising forming a first dielectric sublayer over the substrate substrate A band pass filter layer of the second dielectric sublayer and the third dielectric sublayer.
  • FIG. 1 is a plan view of a color filter array substrate according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of a color filter array substrate according to an embodiment of the present invention
  • FIG. 3 to FIG. 7 are schematic diagrams showing a process of fabricating a band pass filter layer on a color filter array substrate according to an embodiment of the present invention
  • FIG. 8 is a schematic structural diagram of another color filter array substrate according to an embodiment of the present invention.
  • 1 a thin film transistor
  • 2 a pixel electrode
  • 3 a source electrode of the thin film transistor
  • 4 a drain electrode of the thin film transistor
  • 6 plasma enhanced chemical vapor deposition equipment
  • 7 mask
  • 8 gate electrode of thin film transistor
  • 10 gate line
  • 20 data line
  • 30 first pixel area
  • 2 pixel region; 32 third pixel region
  • 40 active layer
  • 50 source/drain metal layer
  • 100 substrate substrate; 101: gate insulating layer; 102: passivation layer; 103: insulating layer; a pass filter layer; 201: a first dielectric sublayer; 202: a second dielectric sublayer; 203: a third dielectric sublayer.
  • the liquid crystal display manufactured by the COA technology improves the aperture ratio of the display panel and increases the brightness of the display panel.
  • the filter layer of the liquid crystal display manufactured by the COA technology in the prior art is generally a color resistive (absorption type) filter. Layer, the purpose of filtering by absorbing light, making the utilization of light very low.
  • an embodiment of the present invention provides a color filter array substrate, a manufacturing method thereof, and a display device to improve utilization of light.
  • the bandpass filter layer separates a band of monochromatic light from the composite light. Light in a certain band is incident on the bandpass filter layer, and only a small band of light has a high transmittance, while other bands have a high reflectance.
  • the band pass filter layer has two structural forms: one is a pass band of a band pass filter layer formed by an overlapping pass band of a long pass layer and a short pass layer, but the structure is not easily obtained.
  • Passband not suitable for color filters of liquid crystal displays
  • the other is a filter layer in the form of a Fabry-Perot interferometer, including a second dielectric sublayer and an opposite layer coated on the second dielectric layer
  • This structure can obtain a narrow pass band and is suitable for a color filter layer of a liquid crystal display.
  • the filter layer of the color filter array substrate in the new embodiment of the present invention is a filter layer in the form of a Fabry-Perot interferometer.
  • the color filter array substrate of the present embodiment includes a plurality of gate lines 10 and a plurality of data lines 20 distributed laterally and vertically, and a plurality of gate lines 10 and data lines 20 defined by the gate lines 10 and the data lines 20.
  • the pixel regions 30, 31, 32 are formed with a thin film transistor 1 and a filter layer 200 in each pixel region, and the filter layer 200 allows only light in a specific wavelength range to be transmitted, thereby displaying a color picture and reflecting other Wavelength light is reused, increasing the utilization of light.
  • the filter layer 200 is, for example, a band pass filter layer including a first dielectric sub-layer 201, a second dielectric layer sub-202, and a third dielectric sub-layer 203 which are sequentially formed on the substrate substrate 100.
  • a band pass filter layer including a first dielectric sub-layer 201, a second dielectric layer sub-202, and a third dielectric sub-layer 203 which are sequentially formed on the substrate substrate 100.
  • the pass band is set to be narrow. In this way, the color resolution and quality of the liquid crystal display can be ensured, and the light of other wavelength bands is also reflected back, and then reused by the reflection plate of the backlight of the liquid crystal display, thereby further improving the utilization of the backlight light.
  • the band pass filter layer of the color filter array substrate in this embodiment can achieve a light utilization rate of about 50%.
  • the liquid crystal display usually realizes the display of the color picture in the three primary colors of red, green and blue. Accordingly, the plurality of pixel regions of the color filter array substrate of the embodiment are divided into the first pixel region 30 according to the thickness of the second dielectric sub-layer 202. The second pixel region 31 and the third pixel region 32.
  • the second dielectric sub-layer 202 in the first pixel region 30 has a first thickness 4 that allows only red light to pass through while reflecting other wavelengths of light; the second dielectric sub-layer 202 in the second pixel region 31 has a second The thickness d 2 allows only green light to pass through while reflecting other wavelengths of light; the second dielectric sub-layer 202 in the third pixel region 32 has a second thickness d 3 that allows only blue light to pass through while reflecting other wavelengths of light.
  • the first dielectric sub-layer 201 and the third dielectric sub-layer 203 may be provided to have a relatively thin thickness, generally 20 to 100 nm, preferably 40 nm.
  • the materials of the first dielectric sub-layer 201 and the third dielectric sub-layer 203 may be, but not limited to, metal materials, alloy materials or metal oxide materials, such as: silver, silver alloy, indium tin oxide or oxidation. Indium.
  • the materials of the first dielectric sub-layer 201 and the third dielectric sub-layer 203 are the same to further ensure the symmetry of the transmission spectrum of the band-pass filter layer 200 and the single peak.
  • the band pass filter layer 200 is simultaneously formed in the fabrication process of the thin film transistor 1.
  • the band pass filter layer 200 when the band pass filter layer 200 is formed on the substrate substrate 100 by a separate process, it is preferable that the band pass filter layer 200 is located below the pixel electrode 2 to prevent the band pass filter layer 200 from being driven.
  • the driving electric field of the deflection of the liquid crystal molecules has an influence because, for the TN type liquid crystal display, the driving electric field for driving the deflection of the liquid crystal molecules is formed by the pixel electrode on the array substrate and the common electrode on the opposite substrate. However, for the ADS type liquid crystal display, the driving electric field for driving the deflection of the liquid crystal molecules is formed by the pixel electrode and the common electrode on the array substrate, so that the third dielectric sub-layer 203 of FIG.
  • the third dielectric sub-layer 203 may be a transparent conductive material such as indium tin oxide ITO.
  • the second dielectric sub-layer 202 may be a dielectric material such as MgF 2 , Si0 2 , Si 3 N 4 or Ti0 2 .
  • an insulating layer 103 may be formed between the band pass filter layer 200 and the thin film transistor 1, as shown in FIG.
  • the thin film transistor 1 in the embodiment of the present invention is a bottom gate type thin film transistor, that is, the gate electrode 8 of the thin film transistor is located below the source electrode 3 and the drain electrode 4.
  • the manufacturing process of the thin film transistor includes: firstly forming a gate electrode 8 of a thin film transistor on the substrate substrate 100, and then sequentially forming a gate insulating layer 101, an active layer pattern 40, and a source/drain metal layer pattern 50 over the gate electrode 8,
  • the source/drain metal layer pattern 50 includes a source electrode 3 and a drain electrode 4; finally, a passivation layer 102 having via holes 5 is formed over the thin film transistor 1.
  • the gate electrode 8 of the thin film transistor 1 is connected to the gate line 10, and the source electrode 3 Connected to the data line 20, the drain electrode 4 is connected to the pixel electrode 2 through a via 5 in the passivation layer 102.
  • the thin film transistor 1 of the present invention can be not only a bottom gate thin film transistor but also a top gate thin film transistor, a coplanar thin film transistor, a back channel thin film transistor, and a corresponding strip.
  • the manufacturing process of the pass filter layer 200 is the same as above, and is no longer
  • the color filter array substrate provided in this embodiment is as shown in FIG. 8. Different from the first embodiment, the band pass filter layer 200 in this embodiment is formed over the thin film transistor 1, and the band pass filter layer 200 is simultaneously formed in the fabrication process of the thin film transistor 1.
  • the first dielectric sub-layer 201 is formed on the gate insulating layer 101.
  • the passivation layer 102 can serve both as an insulating layer between the band pass filter layer 200 and the thin film transistor 1 and as a second dielectric sublayer 202; and the pixel electrode 2 can serve as the third dielectric sublayer 203, thus eliminating the need for The steps of the second dielectric sub-layer 202 and the third dielectric sub-layer 203 are performed separately.
  • the pixel electrode 2 (the third dielectric sub-layer 203) can still be electrically connected to the drain electrode 4 of the thin film transistor 1 through the via 5 of the passivation layer 102.
  • the third dielectric sub-layer 203 covers the first pixel region 30, the second pixel region 31, and the third pixel region 32.
  • the third dielectric sub-layer 203 may be a transparent conductive material such as indium tin oxide ITO.
  • the second dielectric sub-layer 202 may be a dielectric material such as MgF 2 , Si0 2 , Si 3 N 4 or Ti0 2 .
  • the passivation layer 102 may be provided to have different thicknesses in different pixel regions such that the passivation layer 102 serving as the second dielectric sub-layer 202 has different light transmission wavelength ranges in different pixel regions.
  • the gate insulating layer 101 may also be provided with different thicknesses in different pixel regions, so that the gate insulating layer 101 can be used as the second dielectric sub-layer 202 of the band pass filter layer 200, regardless of whether it will be blunt
  • the layer 102 is also the gate insulating layer 101 as the second dielectric sub-layer 202, and the process of separately forming the second dielectric sub-layer 202 can be omitted, saving material.
  • Embodiment 3 Embodiment 3
  • the embodiment provides a method for manufacturing a color filter array substrate according to the first embodiment, including forming a thin film transistor over a substrate of the substrate, and further comprising forming a band pass filter over the substrate of the substrate.
  • the method includes:
  • Step 1 Form a first dielectric sub-layer on the substrate of the village.
  • the bandpass filter layer 200 allows light to pass through only the second media sublayer.
  • the thickness of the 202 is related. Therefore, the first dielectric sub-layer 201 covering the entire substrate substrate 100 can be formed on the substrate substrate 100 by a process such as coating, deposition, sputtering, or the like. Since the patterning process is not required, the production efficiency is improved. Reduced production costs.
  • Step 2 forming a second dielectric sub-layer on the substrate on which the first dielectric sub-layer is formed, the second dielectric sub-layer having different thicknesses in different pixel regions.
  • the step may include, for example:
  • a second dielectric sub-layer 202 covering the first pixel region 30 is deposited on the substrate substrate 100 by, for example, a plasma enhanced chemical vapor deposition device (Plasma Enhanced Chemical Vapor Deposition, "PECVD") using a mask 7. And controlling the deposition time such that the thickness of the second dielectric sub-layer 202 in the first pixel region 30 is ⁇ . For example, when the second medium sublayer
  • the mask 7 is moved to the right over the area where the second dielectric sub-layer 202 is to be formed, and the second dielectric sub-layer 202 covering the second pixel region 31 is deposited on the substrate substrate 100 by the PECVD apparatus 6, and the deposition is controlled.
  • the time is such that the thickness of the second dielectric sub-layer 202 in the second pixel region 31 is d 2 .
  • step of forming the second dielectric sub-layer 202 having the first thickness the step of forming the second dielectric sub-layer 202 having the second thickness d 2 and forming the second dielectric sub-layer having the third thickness d 3
  • order of the steps of 202 is replaceable and is also within the scope of the present invention.
  • the second dielectric sub-layer 202 may also be formed by other fabrication processes, such as a multi-gray mask process, which is within the scope of the present invention.
  • Step 3 forming a third dielectric sublayer on the substrate on which the first dielectric sublayer and the second dielectric sublayer are formed.
  • a third dielectric sub-layer 203 can be formed on the first dielectric sub-layer 201 and the second dielectric sub-layer 202, for example, by coating, deposition, sputtering, or the like.
  • Step 4 Fabricating a thin film transistor on the third dielectric sublayer.
  • the thin film transistor 1 is fabricated in the third dielectric sub-layer 203 by a conventional method in the art.
  • the third dielectric sub-layer 203 can select a transparent conductive material as a common electrode, eliminating the process of fabricating a common electrode.
  • An insulating layer 103 may also be formed between the band pass filter layer 200 and the thin film transistor 1, as shown in FIG. Embodiment 4
  • the embodiment provides a method for manufacturing a color filter array substrate according to the second embodiment, including forming a thin film transistor over a substrate of the substrate, and further comprising forming a band pass filter layer over the substrate of the substrate, wherein the band pass The filter layer is formed over the thin film transistor (i.e., over the gate insulating layer of the thin film transistor), so that a band pass filter layer is simultaneously formed in the fabrication process of the thin film transistor.
  • the method includes, for example:
  • Step 1 A thin film transistor 1 is formed on the substrate substrate 100.
  • Step 2 A first dielectric sub-layer 201 is formed on the gate insulating layer 101 of the thin film transistor 1.
  • a first dielectric sub-layer 201 covering the entire substrate substrate 100 may be formed on the gate insulating layer 101 by a process such as coating, deposition, sputtering, or the like, and then a pattern of the first dielectric sub-layer is formed by, for example, a patterning process, so that A dielectric sub-layer 201 covers only the first, second, and third pixel regions 30, 31, 32.
  • Step 3 forming a passivation layer 102 over the thin film transistor 1, a passivation layer 102 over the drain electrode 4 of the thin film transistor 1 is formed with a passivation layer via 5, and the passivation layer 102 is not
  • the passivation layer 102 serves as the second dielectric sub-layer 202 of the band pass filter layer 200.
  • Step 4 forming a pixel electrode 2 over the passivation layer 102, the pixel electrode 2 being electrically connected to the drain electrode 4 of the thin film transistor 1 through the passivation layer via 5, the pixel electrode 2 being The third dielectric sub-layer 203 of the band pass filter layer 200.
  • the second dielectric sub-layer 202 is formed in the same layer as the passivation layer 102, and the third dielectric sub-layer 203 is provided as a conductive material, through the passivation layer via 5 and the thin film transistor.
  • the drain electrode 4 of 1 is electrically connected, and covers only the first pixel region 30, the second pixel region 31, and the third pixel region 32, so that the third dielectric sub-layer 203 can be used as the pixel electrode 2.
  • steps 1 and 2 can be replaced by the following steps:
  • a thin film transistor 1 is formed on the substrate substrate 100, wherein the gate insulating layer 101 of the thin film transistor 1 has different thicknesses in different pixel regions, and the gate insulating layer 101 serves as the band pass filter layer 200.
  • a passivation layer is formed over the thin film transistor, and a passivation layer above the drain electrode of the thin film transistor is formed with a passivation layer via.
  • the passivation layer 102 may be provided to have different thicknesses in different pixel regions, so that the passivation layer 102 can be used as band pass filter.
  • a second dielectric sub-layer 202 of layer 200 it is also possible to provide the gate insulating layer 101 with different thicknesses in different pixel regions, so that the gate insulating layer 101 can be used as the second dielectric sub-layer 202 of the band pass filter layer 200.
  • a display device which includes the color filter array substrate in any of the above embodiments. This greatly improves the light utilization efficiency of the display device and ensures the color resolution and quality of the display device display screen.
  • the display device can be, for example, a liquid crystal display panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like, or any product or component having a display function.
  • a liquid crystal display that does not realize color screen display in three primary colors of red (R), green (G), and blue (B), such as: based on the three primary colors of R, G, and B,
  • R red
  • G green
  • B blue
  • W white
  • Y yellow
  • d 4 fourth thickness
  • the color filter array substrate, the manufacturing method thereof and the display device provided by the invention pass the Fabry-Perot bandpass filter layer to achieve the purpose of filtering and are not transparent.
  • the light is reflected back for reuse, which greatly improves the utilization of light, thereby improving the light utilization of the liquid crystal display device.
  • the band pass of the color filter is narrow, which ensures the color resolution and quality of the display of the liquid crystal display device.
  • the band pass filter layer is integrated on the array substrate, the aperture ratio of the display device is increased, and the brightness of the display device is increased.

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Abstract

一种彩色滤光阵列基板及其制造方法、显示装置。彩色滤光阵列基板包括横纵交叉分布的多条栅线（10）和多条数据线（20），以及由栅线（10）和数据线（20）限定的多个像素区域（30、31、32），每个像素区域（30、31、32）内包括薄膜晶体管（1），其中每个像素区域（30、31、32）还包括带通滤光层（200），带通滤光层（200）透射特定波长范围内的光线，而反射其他波长光线；带通滤光层（200）包括第一介质亚层（201）、第二介质亚层（202）和第三介质亚层（203）；第二介质亚层（202）在不同像素区域（30、31、32）具有不同的厚度。

Description

彩色滤光阵列基板及其制造方法、 显示装置 技术领域
本发明的实施例涉及显示技术领域， 特别是涉及一种彩色滤光阵列基板 及其制造方法、 显示装置。 背景技术
薄膜晶体管液晶显示器包括薄膜晶体管阵列基板、彩色滤光片和液晶层， 其中，彩色滤光片是液晶显示器的主要组成部分，用于实现彩色画面的显示。 早期制造薄膜晶体管液晶显示器的技术中， 彩色滤光片与作为驱动开关的薄 膜晶体管形成在不同基板上， 并位于液晶层两侧， 然而这种配置方式会造成 显示面板的开口率降低，进而影响显示面板的亮度与画面品质。 由于近年来， 市场上对显示面板的开口率及亮度的要求提高， 业界为应市场需求进而开发 出一种彩色滤光片直接形成在阵列基板上 （ Color filter On Array, 筒称 "COA" ) 的技术， 即将彩色滤光片和薄膜晶体管形成在一块玻璃基板上， 如此不仅可以提升显示面板的开口率， 增加显示面板的亮度， 而且避免了将 彩色滤光片和薄膜晶体管形成在不同基板上所衍生的问题。
现有技术中采用 COA技术制造的薄膜晶体管液晶显示器， 液晶显示面 板的阵列基板包括横纵交叉分布的栅线和数据线， 以及由栅线和数据线限定 的多个像素区域， 在像素区域内形成有薄膜晶体管和不同颜色的滤光层。 通 常是红色滤光层（R )、 绿色滤光层 ( G )和蓝色滤光层（B )。 其中的滤光层 一般为色阻式滤光层， 通过吸收光线来达到滤光的目的， 使得光线的利用率 很低， 仅有 30 %左右。 发明内容
本发明实施例提供一种彩色滤光阵列基板及其制造方法和显示装置， 用 以解决彩色滤光阵列基板的滤光层对光线的利用率低的问题。
根据本发明的一方面， 提供一种彩色滤光阵列基板， 包括横纵交叉分布 的多条栅线和多条数据线， 以及由所述栅线和所述数据线限定的多个像素区 域，每个像素区域内包括薄膜晶体管，其中每个像素区域还包括带通滤光层， 所述带通滤光层透射特定波长范围内的光线， 而反射其他波长光线；
所述带通滤光层包括第一介质亚层、 第二介质亚层和第三介质亚层； 所 述第二介质亚层在不同像素区域具有不同厚度。
^^据本发明的另一方面， 提供一种显示装置， 如上所述的彩色滤光阵列 基板。
根据本发明的再一方面， 还提供一种彩色滤光阵列基板的制造方法， 包 括在一村底基板上方形成薄膜晶体管， 还包括在所述村底基板上方形成包括 第一介质亚层、 第二介质亚层和第三介质亚层的带通滤光层。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例的附图作 筒单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图 1为本发明实施例提供的一种彩色滤光阵列基板的平面图；
图 2为本发明实施例提供的一种彩色滤光阵列基板的结构示意图； 图 3~图 7为本发明实施例提供的彩色滤光阵列基板上带通滤光层的制作 过程示意图；
图 8为本发明实施例提供的另一种彩色滤光阵列基板的结构示意图； 其中， 1: 薄膜晶体管； 2: 像素电极； 3: 薄膜晶体管的源电极； 4: 薄 膜晶体管的漏电极； 5: 钝化层过孔； 6: 等离子体增强化学气相沉积设备； 7: 掩模板； 8: 薄膜晶体管的栅电极； 10: 栅线； 20: 数据线； 30: 第一像素区 域； 31: 第二像素区域； 32: 第三像素区域； 40: 有源层； 50: 源漏金属层； 100: 村底基板； 101 : 栅绝缘层； 102: 钝化层； 103: 绝缘层； 200: 带通滤 光层； 201 : 第一介质亚层； 202: 第二介质亚层； 203: 第三介质亚层。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图，对本发明实施例的技术方案进行清楚、 完整地描述。显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。
除非另作定义， 此处使用的技术术语或者科学术语应当为本发明所属领 域内具有一般技能的人士所理解的通常意义。 本发明专利申请说明书以及权 利要求书中使用的 "第一"、 "第二" 以及类似的词语并不表示任何顺序、 数 量或者重要性， 而只是用来区分不同的组成部分。 同样， "一个" 或者 "一" 等类似词语也不表示数量限制，而是表示存在至少一个。 "包括"或者 "包含" 等类似的词语意指出现在 "包括" 或者 "包含" 前面的元件或者物件涵盖出 现在 "包括" 或者 "包含" 后面列举的元件或者物件及其等同， 并不排除其 他元件或者物件。 "连接"或者 "相连"等类似的词语并非限定于物理的或者 机械的连接， 而是可以包括电性的连接， 不管是直接的还是间接的。 "上"、
"下"、 "左"、 "右" 等仅用于表示相对位置关系， 当被描述对象的绝对位置 改变后， 则该相对位置关系也可能相应地改变。
采用 COA技术制造的液晶显示器的提升了显示面板的开口率， 增加了 显示面板的亮度， 但现有技术中采用 COA技术制造的液晶显示器的滤光层 一般为色阻式（吸收型）滤光层， 通过吸收光线来达到滤光的目的， 使得光 线的利用率很低的问题。 针对该技术问题， 本发明实施例提供一种彩色滤光 阵列基板及其制造方法和显示装置， 以提高对光线的利用率。
带通滤光层可以从复合光中分离出某一波段单色光。 一定波段内的光线 入射至带通滤光层， 只有一小段波段内的光线具有高透过率， 而其他波段内 的光线具有高反射率。 通常带通滤光层有两种结构形式： 一种是由一个长波 通层和一个短波通层的重叠通带波段形成带通滤光层的通带， 但这种结构不 容易获得较窄的通带， 不适用于液晶显示器的彩色滤光片； 另一种是法布里- 珀罗干涉仪形式的滤光层， 包括第二介质亚层以及涂覆在该第二介质层的相 对的两表面上的第一介质亚层和第三介质亚层， 其中， 光线的透过率与第二 介质亚层的厚度相关， 即不同波长的光线对应的第二介质亚层的厚度不同。 这种结构能够获得^艮窄的通带， 适用于液晶显示器的彩色滤光层。 本实用新 型实施例中的彩色滤光阵列基板的滤光层就是法布里-珀罗干涉仪形式的滤 光层。
以下实施例中， "带通滤光层位于薄膜晶体管的上方"表示带通滤光层位 于薄膜晶体管的栅绝缘层之上； "带通滤光层位于薄膜晶体管的下方"表示带 通滤光层位于薄膜晶体管的栅极之下。 实施例一
结合图 1、 图 2所示， 本实施例的彩色滤光阵列基板， 包括横纵交叉分 布的多条栅线 10和多条数据线 20, 以及由栅线 10和数据线 20限定的多个 像素区域 30、 31、 32, 在每个像素区域内形成有薄膜晶体管 1和滤光层 200, 该滤光层 200只允许特定波长范围内的光线透过， 实现彩色画面的显示， 而 反射其他波长光线以重新利用， 提高了对光线的利用率。
在本实施例中， 滤光层 200例如为带通滤光层， 其包括依次形成在村底 基板 100上的第一介质亚层 201、第二介质层亚 202和第三介质亚层 203。液 晶显示器的背光源发出的光线射入第一介质亚层 201后， 一部分光线被反射 回去， 再经过液晶显示器的背光源的反射板的反射后重新利用， 提高了对光 线的利用率； 而另一部分光线则射入第二介质亚层 202。 通过控制第二介质 亚层 202在不同像素区域内的厚度， 使得每个像素区域内只有某一小段波段 内的光线从第三介质亚层 203透射出， 也就是， 将通带设置得很窄， 这样能 够保证液晶显示器的色彩分辨率和质量， 而其他波段的光同样被反射回去， 再经过液晶显示器的背光源的反射板的反射后重新利用， 进一步提高了对背 光源光线的利用率。 本实施例中的彩色滤光阵列基板的带通滤光层对光线的 利用率可达到 50 %左右。
液晶显示器通常以红、 绿、 蓝三原色来实现彩色画面的显示， 相应地， 本实施例的彩色滤光阵列基板的多个像素区域根据第二介质亚层 202的厚度 划分为第一像素区域 30、 第二像素区域 31和第三像素区域 32。 例如， 第一 像素区域 30内的第二介质亚层 202具有第一厚度 4, 只允许红光透过， 而 反射其他波长光线； 第二像素区域 31 内的第二介质亚层 202具有第二厚度 d2, 只允许绿光透过， 而反射其他波长光线； 第三像素区域 32内的第二介质 亚层 202具有第二厚度 d3, 只允许蓝光透过， 而反射其他波长光线。 例如，可以根据公式 ^ 1来计算每个像素区域内的第二介质亚层 202 的厚度 d, 其中， m为奇数， 优选 m=l , 计算出的第二介质亚层 202的厚度 d越小， 透光性较好； λ为每个像素区域允许透过的光线的波长； η为第二介 质亚层 202的折射率。 在一个示例中， d dzX^
在一个示例中， 可以设置第一介质亚层 201和第三介质亚层 203的厚度 相同 D2(n= D2。3, 从而保证带通滤光层 200的透射光谱的对称性和波峰单一。
在一个示例中， 为了保证透光性， 可以设置第一介质亚层 201和第三介 质亚层 203具有较薄的厚度， 一般为 20~100nm, 优选为 40nm。
本实施例中， 第一介质亚层 201和第三介质亚层 203的材料可以为但不 局限于金属材料、 合金材料或金属氧化物材料， 如： 银、 银的合金、 氧化铟 锡或氧化铟辞。 优选第一介质亚层 201和第三介质亚层 203的材料相同， 以 进一步保证带通滤光层 200透射光谱的对称性和波峰单一。 薄膜晶体管 1的制作工艺中同时形成带通滤光层 200。
结合图 2所示， 当带通滤光层 200通过单独的工艺形成在村底基板 100 上时， 优选带通滤光层 200位于像素电极 2的下方， 以防止带通滤光层 200 对驱动液晶分子偏转的驱动电场产生影响， 因为对于 TN型液晶显示器， 驱 动液晶分子偏转的驱动电场由阵列基板上的像素电极和对置基板上的公共电 极形成。 然而， 对于 ADS 型液晶显示器， 驱动液晶分子偏转的驱动电场由 阵列基板上的像素电极和公共电极形成， 因此还可以将图 2中的第三介质亚 层 203作为公共电极，省去了单独做公共电极的步骤。当将第三介质亚层 203 作为公共电极时， 第三介质亚层 203 可以采用透明导电材料， 如氧化铟锡 ITO。 当第一介质亚层 201和第三介质亚层 203的材料相同时， 第二介质亚 层 202可以为介电材料， 如： MgF2、 Si02、 Si3N4或 Ti02。
在本实施例中， 当第三介质亚层 203为导电材料时， 可以在带通滤光层 200和薄膜晶体管 1之间形成有绝缘层 103 , 如图 2所示。
本发明实施例中的薄膜晶体管 1为底栅型薄膜晶体管， 即薄膜晶体管的 栅电极 8位于源电极 3和漏电极 4的下方。 该薄膜晶体管的制作工艺例如包 括： 首先在村底基板 100上形成薄膜晶体管的栅电极 8, 然后在栅电极 8上 方依次形成栅绝缘层 101、有源层图案 40和源漏金属层图案 50, 其中， 源漏 金属层图案 50包括源电极 3和漏电极 4; 最后在薄膜晶体管 1的上方形成具 有过孔 5的钝化层 102。 薄膜晶体管 1的栅电极 8与栅线 10连接， 源电极 3 与数据线 20连接， 漏电极 4通过钝化层 102中的过孔 5与像素电极 2连接。 本领域所属技术人员很容易得知本发明中的薄膜晶体管 1不仅可以为底 栅型薄膜晶体管， 也可以为顶栅型薄膜晶体管、 共平面型薄膜晶体管、 背沟 道型薄膜晶体管， 对应的带通滤光层 200的制作工艺与上述相同， 在此不再
实施例二
本实施例提供的彩色滤光阵列基板如图 8所示。 与实施例一不同的是， 本实施例中的带通滤光层 200形成在薄膜晶体管 1上方，且该带通滤光层 200 在薄膜晶体管 1的制作工艺中同时形成。
本实施例中， 第一介质亚层 201形成在栅绝缘层 101上。 钝化层 102既 可作为带通滤光层 200和薄膜晶体管 1之间的绝缘层， 又可作为第二介质亚 层 202; 而像素电极 2可作为第三介质亚层 203, 因此省去了单独做第二介质 亚层 202和第三介质亚层 203的步骤。 在此情况下， 像素电极 2 (第三介质 亚层 203 )仍可以通过钝化层 102的过孔 5与薄膜晶体管 1的漏电极 4电性 连接。
本实施例中，第三介质亚层 203覆盖第一像素区域 30、第二像素区域 31 和第三像素区域 32。 第三介质亚层 203可以采用透明导电材料， 如氧化铟锡 ITO。 当第一介质亚层 201和第三介质亚层 203的材料相同时， 第二介质亚 层 202可以为介电材料， 如： MgF2、 Si02、 Si3N4或 Ti02。
本实施例中， 可以设置钝化层 102在不同像素区域内具有不同的厚度， 从而使充当第二介质亚层 202的钝化层 102在不同像素区域具有不同的光透 过波长范围。 当然， 在其他实施例中， 也可以设置栅绝缘层 101在不同像素 区域内具有不同的厚度， 从而可以将栅绝缘层 101作为带通滤光层 200的第 二介质亚层 202,无论将钝化层 102还是栅绝缘层 101作为第二介质亚层 202, 都可以省略单独制作第二介质亚层 202的工艺， 节省材料。 实施例三
本实施例提供一种实施例一中的彩色滤光阵列基板的制造方法， 包括在 一村底基板上方形成薄膜晶体管， 还包括在所述村底基板上方形成带通滤光 层， 其中带通滤光层形成在薄膜晶体管的下方（即薄膜晶体管和村底基板之 间）， 因此带通滤光层通过单独工艺形成。
例如， 如图 2、 图 3至图 7所示， 该方法包括：
步骤 1： 在所述村底基板上形成第一介质亚层。
结合图 3所示， 由于带通滤光层 200允许透过的光线只与第二介质亚层
202 的厚度有关， 因此， 可以通过涂覆、 沉积、 溅射等工艺在村底基板 100 上形成覆盖整个村底基板 100的第一介质亚层 201 , 由于不需要构图工艺， 提高了生产效率， 降低了生产成本。
步骤 2: 在形成有所述第一介质亚层的基板上形成第二介质亚层， 所述 第二介质亚层在不同像素区域具有不同厚度。
结合图 4~图 6所示， 则该步骤例如可以包括：
首先，利用掩模板 7,通过例如等离子体增强化学气相沉积设备（Plasma Enhanced Chemical Vapor Deposition, 筒称 "PECVD" ) 6在村底基板 100上 沉积覆盖第一像素区域 30的第二介质亚层 202, 并控制沉积的时间， 使得第 一像素区域 30内的第二介质亚层 202的厚度为 ^。 例如， 当第二介质亚层
202为 Si3N4时， 取 m=l , η=1.938, λ =700ηιη, 根据公式 计算出
Figure imgf000008_0001
其中， 的取值范围为 180.6 ± 15.5nm;
之后， 向右移动掩模板 7到要形成第二介质亚层 202的区域上方， 通过 PECVD设备 6在村底基板 100上沉积覆盖第二像素区域 31的第二介质亚层 202, 并控制沉积的时间， 使得第二像素区域 31内的第二介质亚层 202的厚 度为 d2。例如，当第二介质亚层 202为 Si3N4时，取 m=l , n=1.938, λ =546.1ηιη, 根据公式 = ^计算出 d2=140.9nm, 其中， d2的取值范围为 140.9 ± 15.5nm;
最后， 向右移动掩模板 7到要形成第三介质亚层 203的区域上方， 通过 PECVD设备 6在村底基板 100上沉积覆盖第三像素区域 32的第二介质亚层 202, 并控制沉积的时间， 使得第三像素区域 32对应的第二介质亚层 202的 厚度为 d3。 例如， 当第二介质亚层 202为 Si3N4时， 取 m=l , η=1.938, λ
=435.8nm, 根据公式 =^ 计算出 d3=112.4nm, 其中， d3的取值范围为 112.4 ± 15.5nm;
需要说明的是， 形成具有第一厚度 的第二介质亚层 202的步骤、 形成 具有第二厚度 d2的第二介质亚层 202的步骤和形成具有第三厚度 d3的第二介 质亚层 202的步骤的顺序是可以更换的， 其也属于本发明的保护范围。
另外， 第二介质亚层 202也可以通过其他制作工艺形成， 如： 多灰阶掩 膜工艺， 其都属于本发明的保护范围。
步骤 3: 在形成有所述第一介质亚层和第二介质亚层的基板上形成第三 介质亚层。
结合图 7所示， 例如可以通过涂覆、 沉积、 溅射等工艺在第一介质亚层 201和第二介质亚层 202上形成第三介质亚层 203。
步骤 4: 在第三介质亚层上制作薄膜晶体管。
例如， 在第三介质亚层 203采用本领域常规方法制作薄膜晶体管 1。 对于 ADS型液晶显示器， 第三介质亚层 203可以选择透明导电材料， 以作为公共电极， 省去了制作公共电极的工艺。 还可在带通滤光层 200和薄 膜晶体管 1之间形成绝缘层 103, 如图 2所示。 实施例四
本实施例提供一种实施例二中的彩色滤光阵列基板的制造方法， 包括在 一村底基板上方形成薄膜晶体管， 还包括在所述村底基板上方形成带通滤光 层， 其中带通滤光层形成在薄膜晶体管的上方（即薄膜晶体管的栅绝缘层之 上 ), 因此在薄膜晶体管的制作工艺中同时形成带通滤光层。
如图 8所示， 该方法例如包括：
步骤 1: 在所述村底基板 100上形成薄膜晶体管 1。
步骤 2: 在薄膜晶体管 1的栅绝缘层 101上形成第一介质亚层 201。 例如， 可以通过涂覆、 沉积、 溅射等工艺在栅绝缘层 101上形成覆盖整 个村底基板 100的第一介质亚层 201 , 再通过例如构图工艺形成第一介质亚 层的图案，使得第一介质亚层 201仅覆盖第一、第二、第三像素区域 30、 31、 32。
步骤 3: 在所述薄膜晶体管 1上方形成钝化层 102, 所述薄膜晶体管 1 的漏电极 4上方的钝化层 102形成有钝化层过孔 5 , 且所述钝化层 102在不 同像素区域 30、 31、 32内具有不同的厚度 、 d2、 d3, 所述钝化层 102作为 所述带通滤光层 200的第二介质亚层 202。
步骤 4:在所述钝化层 102上方形成像素电极 2,所述像素电极 2通过所 述钝化层过孔 5与所述薄膜晶体管 1的漏电极 4电性连接， 所述像素电极 2 作为所述带通滤光层 200的第三介质亚层 203。
例如， 对于 TN型液晶显示器， 为了节省工艺， 优选第二介质亚层 202 与钝化层 102同层制作， 并设置第三介质亚层 203为导电材料， 通过钝化层 过孔 5与薄膜晶体管 1的漏电极 4电性连接， 且仅覆盖第一像素区域 30、 第 二像素区域 31和第三像素区域 32, 从而可以将第三介质亚层 203作为像素 电极 2。
在其他示例中， 还可以设置栅绝缘层 101在不同像素区域内具有不同的 厚度， 从而可以将栅绝缘层 101作为带通滤光层 200的第二介质亚层 202。 在此情况下， 上述步骤 1和 2、 3可替代为下述步骤：
在所述村底基板 100上形成薄膜晶体管 1 , 其中， 所述薄膜晶体管 1的 栅绝缘层 101在不同像素区域内具有不同的厚度， 所述栅绝缘层 101作为所 述带通滤光层 200的第二介质亚层 202;
在所述薄膜晶体管上方形成钝化层， 所述薄膜晶体管的漏电极上方的钝 化层形成有钝化层过孔。
综上， 当在薄膜晶体管 1的制作工艺中同时形成带通滤光层 200时， 可 以设置钝化层 102在不同像素区域内具有不同的厚度,从而可以将钝化层 102 作为带通滤光层 200的第二介质亚层 202。 当然， 还可以设置栅绝缘层 101 在不同像素区域内具有不同的厚度， 从而可以将栅绝缘层 101作为带通滤光 层 200的第二介质亚层 202。 无论将钝化层 102还是栅绝缘层 101作为带通 滤光层 200的第二介质亚层 202, 都可以省略单独制作第二介质亚层 202的 工艺， 节省材料。 实施例五
本实施例中提供一种显示装置， 其包括上述任一实施例中的彩色滤光阵 列基板。 这样大大提高了显示装置的光线利用率， 并保证了显示装置显示画 面的色彩分辨率和质量。 该显示装置例如可以为： 液晶显示面板、 电子纸、 OLED面板、 手机、 平板电脑、 电视机、 显示器、 笔记本电脑、 数码相框、 导航仪等任何具有显 示功能的产品或部件。 在本发明所有实施例中， 对于不是以红（R )、 绿（G )、 蓝 (B)三原色来 实现彩色画面显示的液晶显示器， 如： 在 R、 G、 B三原色的基础上， 再增 加一个白色 （W ) 的子像素或黄色 （Y ) 的子像素时， 只需再增加一个像素 区域， 且该像素区域内的第二介质亚层 202具有第四厚度 d4, 只许白光（或 黄光）透过， 而反射其他波长的光线。 而对于以其他混色方案实现彩色画面 显示的液晶显示器， 只需变更每个像素区域内第二介质亚层 202的厚度， 从 而允许特定颜色的波长的光线透过， 而反射其他波长的光线。
由以上实施例可以看出， 本发明所提供的彩色滤光阵列基板及其制造方 法和显示装置，通过法布里 -珀罗式带通滤光层来实现滤光的目的而未透过的 光线则被反射回去重新利用， 大大提高了光线的利用率， 进而提高了液晶显 示装置的光线利用率。 且彩色滤光片的带通很窄， 保证了液晶显示装置显示 画面的色彩分辨率和质量。 进一步地， 由于带通滤光层集成在阵列基板上， 提升了显示装置的开口率， 增加了显示装置的亮度。
以上所述仅是本发明的示范性实施方式， 而非用于限制本发明的保护范 围， 本发明的保护范围由所附的权利要求确定。

Claims

权利要求书
1、一种彩色滤光阵列基板，包括横纵交叉分布的多条栅线和多条数据线， 以及由所述栅线和所述数据线限定的多个像素区域， 每个像素区域内包括薄 膜晶体管， 其中每个像素区域还包括带通滤光层， 所述带通滤光层透射特定 波长范围内的光线， 而反射其他波长光线；
所述带通滤光层包括第一介质亚层、 第二介质亚层和第三介质亚层； 所 述第二介质亚层在不同像素区域具有不同厚度。
2、根据权利要求 1所述的彩色滤光阵列基板，其中所述多个像素区域根 据所述第二介质亚层厚度不同划分为第一像素区域、 第二像素区域和第三像 素区域； 所述第二介质亚层在所述第一像素区域具有第一厚度， 所述第一像 素区域内的所述带通滤光层透射红光， 反射其他波长光线； 所述第二介质亚 层在所述第二像素区域内具有第二厚度， 所述第二像素区域内的所述带通滤 光层透射绿光， 反射其他波长光线； 所述第二介质亚层在所述第三像素区域 内具有第三厚度， 所述第三像素区域内的所述带通滤光层透射蓝光， 反射其 他波长光线。
3、根据权利要求 1或 2所述的彩色滤光阵列基板，其中所述像素区域还 包括像素电极， 所述像素电极与所述薄膜晶体管的漏电极连接； 所述带通滤 光层位于所述像素电极的下方。
4、根据权利要求 3所述的彩色滤光阵列基板，其中所述像素区域还包括 公共电极， 所述公共电极作为所述带通滤光层的第三介质亚层。
5、根据权利要求 4所述的彩色滤光阵列基板，其中所述带通滤光层位于 所述薄膜晶体管的下方；
所述带通滤光层与所述薄膜晶体管之间形成有绝缘层。
6、根据权利要求 1或 2所述的彩色滤光阵列基板，其中所述像素区域还 包括像素电极， 所述像素电极与所述薄膜晶体管的漏电极连接， 所述像素电 极作为所述带通滤光层的第三介质亚层。
7、根据权利要求 6所述的彩色滤光阵列基板，其中所述薄膜晶体管的上 方形成有钝化层， 所述钝化层在不同像素区域内具有不同的厚度； 所述钝化 层作为所述带通滤光层的第二介质亚层。
8、根据权利要求 6所述的彩色滤光阵列基板，其中所述薄膜晶体管的栅 绝缘层在不同像素区域内具有不同的厚度； 所述栅绝缘层作为所述带通滤光 层的第二介质亚层。
9、根据权利要求 1至 8任一项所述的彩色滤光阵列基板，其中所述第一 介质亚层和第三介质亚层为金属材料、 合金材料或金属氧化物材料； 所述第 二介质亚层为介电材料。
10、 根据权利要求 1至 9任一项所述的彩色滤光阵列基板， 其中所述第 一介质亚层和第三介质亚层的材料相同； 且所述第一介质亚层和第三介质亚 层的厚度相同。
11、根据权利要求 1至 10任一项所述的彩色滤光阵列基板，其中所述第 一介质亚层和第三介质亚层的厚度范围为 20~100nm。
12、一种显示装置， 包括如权利要求 1至 11任一项所述的彩色滤光阵列 基板。
13、 一种彩色滤光阵列基板的制造方法， 包括在一村底基板上方形成薄 膜晶体管， 还包括在所述村底基板上方形成包括第一介质亚层、 第二介质亚 层和第三介质亚层的带通滤光层。
14、根据权利要求 13所述的彩色滤光阵列基板的制造方法，其中所述带 通滤光层形成在薄膜晶体管和村底基板之间， 所述在所述村底基板上方形成 包括第一介质亚层、 第二介质亚层和第三介质亚层的带通滤光层包括： 在所述村底基板上形成第一介质亚层；
在形成有所述第一介质亚层的基板上形成第二介质亚层， 所述第二介质 亚层在不同像素区域具有不同厚度；
在形成有所述第一介质亚层和第二介质亚层的基板上形成第三介质亚 层。
15、 根据权利要求 13或 14所述的彩色滤光阵列基板的制造方法， 还包 括在所述带通滤光层和薄膜晶体管之间形成有绝缘层。
16、根据权利要求 13所述的彩色滤光阵列基板的制造方法，其中所述带 通滤光层形成在薄膜晶体管的栅绝缘层之上， 该方法包括：
在所述村底基板上形成薄膜晶体管；
在薄膜晶体管的栅绝缘层上形成第一介质亚层； 在所述薄膜晶体管上方形成钝化层， 所述薄膜晶体管的漏电极上方的钝 化层形成有钝化层过孔， 且所述钝化层在不同像素区域内具有不同的厚度， 所述钝化层作为所述带通滤光层的第二介质亚层；
在所述钝化层上方形成像素电极， 所述像素电极通过所述钝化层过孔与 所述薄膜晶体管的漏电极电性连接， 所述像素电极作为所述带通滤光层的第 三介质亚层。
17、根据权利要求 13所述的彩色滤光阵列基板的制造方法，其中所述带 通滤光层形成在薄膜晶体管的栅绝缘层之上， 该方法包括：
在所述村底基板上形成薄膜晶体管， 其中， 所述薄膜晶体管的栅绝缘层 在不同像素区域内具有不同的厚度， 所述栅绝缘层作为所述带通滤光层的第 二介质亚层；
在所述薄膜晶体管上方形成钝化层， 所述薄膜晶体管的漏电极上方的钝 化层形成有钝化层过孔；
在所述钝化层上方形成像素电极， 所述像素电极通过所述钝化层过孔与 所述薄膜晶体管的漏电极电性连接， 所述像素电极作为所述带通滤光层的第 三介质亚层。
PCT/CN2013/087388 2013-05-23 2013-11-19 彩色滤光阵列基板及其制造方法、显示装置 WO2014187090A1 (zh)

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