WO2014112541A1 - Composition durcissable pour composant électronique, structure de connexion et procédé pour la production d'une structure de connexion - Google Patents

Composition durcissable pour composant électronique, structure de connexion et procédé pour la production d'une structure de connexion Download PDF

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WO2014112541A1
WO2014112541A1 PCT/JP2014/050616 JP2014050616W WO2014112541A1 WO 2014112541 A1 WO2014112541 A1 WO 2014112541A1 JP 2014050616 W JP2014050616 W JP 2014050616W WO 2014112541 A1 WO2014112541 A1 WO 2014112541A1
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Prior art keywords
electrode
curable composition
connection
conductive particles
conductive
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PCT/JP2014/050616
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English (en)
Japanese (ja)
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石澤 英亮
敬士 久保田
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積水化学工業株式会社
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Priority to KR1020157002632A priority Critical patent/KR20150109322A/ko
Priority to CN201480002105.9A priority patent/CN104540869B/zh
Priority to JP2014504102A priority patent/JP5681327B2/ja
Publication of WO2014112541A1 publication Critical patent/WO2014112541A1/fr

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Definitions

  • the present invention relates to a curable composition for electronic parts used for connecting copper electrodes. Moreover, this invention relates to the manufacturing method of the connection structure which used the said curable composition for electronic components, and a connection structure.
  • thermosetting resin compositions are widely used in various applications such as electronics, architecture, and vehicles. Moreover, in order to electrically connect between electrodes of various members to be connected, conductive particles may be blended with the thermosetting resin composition.
  • a thermosetting resin composition containing conductive particles is called an anisotropic conductive material.
  • the anisotropic conductive material is used for connection between an IC chip and a flexible printed circuit board, connection between an IC chip and a circuit board having an ITO electrode, and the like.
  • these electrodes can be electrically connected by conductive particles by heating and pressing.
  • Patent Document 1 discloses a composition containing (a) an epoxy resin and (b) a curing accelerator.
  • imidazoles are used as said (b) hardening accelerator.
  • patent document 1 it is proposed to use the said composition as a film-form adhesive for semiconductor sealing.
  • Patent Document 1 workability is excellent when a composition is used for sealing in a semiconductor device, and generation of voids can be sufficiently suppressed even when heated to 300 ° C. or higher. It is described that a semiconductor device sufficiently excellent in reliability and insulation reliability can be manufactured.
  • the conventional curable composition as described in Patent Document 1 may not be thermally cured sufficiently quickly. Further, the surface of the copper electrode is usually subjected to a heat-resistant preflux treatment. In order to electrically connect such a copper electrode, when a conventional curable composition is used, conductivity may be lowered.
  • An object of the present invention is to provide a curable composition for an electronic component that can be cured quickly and can enhance electrical conductivity even when a copper electrode is connected, and to cure the electronic component. It is providing the manufacturing method of the connection structure using a conductive composition, and a connection structure.
  • a curable composition for electronic components used for connecting copper electrodes including a thermosetting compound, a latent curing agent, and an imidazole compound having an aromatic skeleton.
  • a curable composition for electronic components is provided.
  • the latent curing agent is a microcapsule type imidazole curing agent.
  • the curable composition for electronic parts contains conductive particles.
  • the conductive particles are conductive particles whose outer surface is conductive.
  • the curable composition for electronic parts according to the present invention, is a paste.
  • a first connection target member having a first electrode on the surface
  • a second connection target member having a second electrode on the surface
  • the first connection target member and the A connecting portion connecting to a second connection target member
  • the connecting portion is formed by curing the curable composition for electronic components described above, and the first electrode and the first A connection structure is provided in which at least one of the two electrodes is a copper electrode, and the first electrode and the second electrode are electrically connected.
  • the curable composition for electronic components includes conductive particles, and the first electrode and the second electrode are electrically connected to the conductive particles. It is connected.
  • the above-described curing for electronic components is performed between the first connection target member having the first electrode on the surface and the second connection target member having the second electrode on the surface.
  • Forming a connecting portion connecting the first connection target member and the second connection target member by curing the curable composition for electronic components Obtaining a connection structure in which the first electrode and the second electrode are electrically connected, and at least one of the first electrode and the second electrode is a copper electrode
  • a method for manufacturing a connection structure is provided.
  • the said curable composition for electronic components contains electroconductive particle, and the said 1st electrode and the said 2nd electrode are the said electroconductive particle. A connection structure that is electrically connected is obtained.
  • the curable composition for electronic parts according to the present invention contains a thermosetting compound, a latent curing agent, and an imidazole compound having an aromatic skeleton, it can be quickly cured. Furthermore, when the copper electrode is connected using the curable composition for electronic components according to the present invention, the electrical conductivity can be increased.
  • FIG. 1 is a cross-sectional view schematically showing a connection structure using a curable composition for electronic parts according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view schematically showing a modification of the connection structure shown in FIG.
  • FIG. 3 is a cross-sectional view schematically showing conductive particles that can be used in the curable composition for electronic components according to one embodiment of the present invention.
  • FIG. 4 is a cross-sectional view showing a modification of the conductive particles.
  • FIG. 5 is a cross-sectional view showing another modified example of conductive particles.
  • the curable composition for electronic components according to the present invention includes a thermosetting compound, a latent curing agent, and an imidazole compound having an aromatic skeleton.
  • the said curable composition is used for the connection of a copper electrode.
  • the said curable composition is used for an electronic component.
  • the said curable composition is used suitably for the connection of an electronic component. It is preferable that the said curable composition is a connection material for electronic components. It is preferable that the said curable composition is a circuit connection material for electronic components.
  • the curable composition for electronic parts according to the present invention has the above-described composition, it can be quickly cured. Furthermore, since the curable composition for electronic components according to the present invention has the above-described composition, it is possible to improve conductivity when a copper electrode is connected.
  • the surface of the copper electrode is usually heat-resistant preflux treated.
  • electroconductivity can be improved.
  • the imidazole compound having an aromatic skeleton greatly contributes to the improvement of the conductivity of the copper electrode.
  • the thermosetting compound cannot be sufficiently cured, or the storage stability of the composition is low. It becomes low, or the curing rate of the composition becomes slow.
  • thermosetting compound is rapidly cured mainly by the latent curing agent, and the conductivity of the copper electrode is enhanced mainly by the imidazole compound having the aromatic skeleton. Therefore, in the present invention, there is a great significance in combining the latent curing agent and the imidazole compound having an aromatic skeleton in the connection of the copper electrode.
  • the moisture and heat resistance of the cured product can be improved.
  • the thermal shock resistance of the cured product can be improved.
  • thermosetting compound examples include oxetane compounds, epoxy compounds, episulfide compounds, (meth) acrylic compounds, phenolic compounds, amino compounds, unsaturated polyester compounds, polyurethane compounds, silicone compounds, and polyimide compounds.
  • oxetane compounds examples include oxetane compounds, epoxy compounds, episulfide compounds, (meth) acrylic compounds, phenolic compounds, amino compounds, unsaturated polyester compounds, polyurethane compounds, silicone compounds, and polyimide compounds.
  • the said thermosetting compound only 1 type may be used and 2 or more types may be used together.
  • the epoxy compound has a property that the cured product has high adhesive strength and is excellent in water resistance and heat resistance of the cured product. Therefore, the thermosetting compound is preferably an epoxy compound.
  • the above epoxy compounds include bisphenol type epoxy compounds, phenol novolac type epoxy compounds, biphenyl novolac type epoxy compounds, biphenol type epoxy compounds, resorcin type epoxy compounds, naphthalene type epoxy compounds, fluorene type epoxy compounds, phenol aralkyl type epoxy compounds, naphthol.
  • Examples include aralkyl type epoxy compounds, dicyclopentadiene type epoxy compounds, anthracene type epoxy compounds, epoxy compounds having an adamantane skeleton, epoxy compounds having a tricyclodecane skeleton, and epoxy compounds having a triazine nucleus in the skeleton.
  • the bisphenol type epoxy compound include a bisphenol A type epoxy compound, a bisphenol F type epoxy compound, and a bisphenol S type epoxy compound.
  • the epoxy compound may have an epoxy group and a radical polymerizable group.
  • the radical polymerizable group means a group capable of addition polymerization by a radical.
  • examples of the radical polymerizable group include a group containing an unsaturated double bond.
  • Specific examples of the radical polymerizable group include allyl group, isopropenyl group, maleoyl group, styryl group, vinylbenzyl group, (meth) acryloyl group and vinyl group.
  • the (meth) acryloyl group means an acryloyl group and a methacryloyl group.
  • the radical polymerizable group preferably has a vinyl group, and more preferably a (meth) acryloyl group.
  • the radical polymerizable group is a (meth) acryloyl group
  • the radical polymerizable group has a vinyl group.
  • the epoxy compound preferably has an epoxy group at both ends.
  • the epoxy compound preferably has a vinyl group in the side chain, preferably has a (meth) acryloyl group, and has a (meth) acryloyl group in the side chain. It is preferable.
  • the weight average molecular weight of the epoxy compound is preferably 500 or more, more preferably 1000 or more, preferably 150,000 or less, more preferably 50000 or less. More preferably, it is 15000 or less.
  • the weight average molecular weight of the epoxy compound indicates a weight average molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC).
  • the epoxy compound is a reaction product using a diol compound and a compound having two epoxy groups.
  • the epoxy compound is preferably obtained by reacting a reaction product of a diol compound and a compound having two epoxy groups with a compound having a vinyl group or a compound having an epoxy group.
  • the epoxy compound preferably has at least one vinyl group in the side chain, and more preferably has at least two vinyl groups in the side chain in total. As the number of vinyl groups increases, the heating time can be further shortened, and the adhesiveness and heat-and-moisture resistance of the cured product can be further improved.
  • the epoxy compound is preferably a reaction product of a compound having two or more phenolic hydroxyl groups and a compound having two or more epoxy groups.
  • Examples of the compound having two or more phenolic hydroxyl groups include bisphenol compounds, resorcinol and naphthalenol.
  • Examples of the bisphenol compound include bisphenol F, bisphenol A, bisphenol S, bisphenol SA, and bisphenol E.
  • Examples of the epoxy compound having two or more epoxy groups include aliphatic epoxy compounds and aromatic epoxy compounds.
  • Examples of the aliphatic epoxy compound include a compound having a glycidyl ether group at both ends of an alkyl chain having 3 to 12 carbon atoms and a polyether skeleton having 2 to 4 carbon atoms. Examples thereof include polyether type epoxy compounds having structural units bonded continuously.
  • the epoxy compound has a radical polymerizable group in a reaction product of bisphenol F or resorcinol and 1,6-hexanediol diglycidyl ether or resorcinol diglycidyl ether (hereinafter sometimes referred to as a reaction product X). It is preferably obtained by reacting a compound. In this reaction, the reaction is performed so that the radical polymerizable group remains. Epoxy compounds synthesized using such compounds can be cured more rapidly, and the adhesiveness and heat-and-moisture resistance of the cured product can be further enhanced.
  • the compound having a radical polymerizable group is preferably (meth) acrylic acid or (meth) acryloyloxyethyl isocyanate.
  • Examples of the reactant X include a first reaction product of bisphenol F and 1,6-hexanediol diglycidyl ether, a second reaction product of resorcinol and 1,6-hexanediol diglycidyl ether, resorcinol and resorcinol diester. And a third reactant with glycidyl ether and a fourth reactant with bisphenol F and resorcinol diglycidyl ether.
  • the first reaction product has a structural unit in the main chain in which a skeleton derived from bisphenol F and a skeleton derived from 1,6-hexanediol diglycidyl ether are bonded, and 1,6-hexanediol diglycidyl. It has an epoxy group derived from ether at both ends.
  • the second reaction product has a structural unit derived from resorcinol and a structural unit derived from 1,6-hexanediol diglycidyl ether in the main chain, and is derived from 1,6-hexanediol diglycidyl ether. It has an epoxy group at both ends.
  • the third reaction product has a skeleton derived from resorcinol and a skeleton derived from resorcinol diglycidyl ether in the main chain, and has an epoxy group derived from resorcinol diglycidyl ether at both ends.
  • the fourth reaction product has a skeleton derived from bisphenol F and a skeleton derived from resorcinol diglycidyl ether in the main chain, and an epoxy group derived from resorcinol diglycidyl ether at both ends.
  • the first, second, third, and fourth Of the reactants, the first reactant, the second reactant, or the third reactant is preferred.
  • the reactant X is preferably the first reactant, preferably the second reactant, and further preferably the third reactant.
  • latent curing agent examples include a latent imidazole curing agent, a latent amine curing agent, a latent phenol curing agent, a boron trifluoride-amine complex, and an organic acid hydrazide.
  • the latent curing agent may or may not have an aromatic skeleton.
  • the said latent hardening agent only 1 type may be used and 2 or more types may be used together.
  • Latent imidazole curing agent Commercially available products of the latent imidazole curing agent include clathrate imidazole compounds “TEP-2MZ”, “TEP-2E4MZ” and “TEP-1B2MZ” manufactured by Nippon Soda Co., Ltd., and “Cureduct P” manufactured by Shikoku Kasei Kogyo Co., Ltd. -0505 "and the like.
  • latent amine curing agent examples include dicyandiamide, a modified amine compound, and an amine adduct compound.
  • modified amine compounds examples include “Fujicure FXR-1020”, “Fujicure FXR-1030” and “Fujicure FXR-1081” manufactured by T & K TOKA.
  • examples of the amine adduct compound include “Amure PN-23”, “Amure PN-H”, “Amure PN-31”, “Amure PN-40”, “Amure PN-50”, and “Amicure” manufactured by Ajinomoto Finetech.
  • the latent curing agent is preferably a latent imidazole curing agent, and more preferably a microcapsule type imidazole curing agent.
  • the latent curing agent is more preferably a microcapsule type latent curing agent, and more preferably a microcapsule type imidazole curing agent.
  • the content of the latent curing agent with respect to 100 parts by weight of the thermosetting compound is preferably 1 part by weight or more, more preferably 5 parts by weight or more, preferably 65 parts by weight or less, more preferably 55 parts by weight or less. It is.
  • the content of the latent curing agent is not less than the above lower limit and not more than the above upper limit, the quick curability of the composition and the conductivity between the copper electrodes are improved in a well-balanced manner.
  • the imidazole compound having the aromatic skeleton is not a latent curing agent. As the imidazole compound having the aromatic skeleton, the latent curing agent is excluded. The latent curing agent contained in the curable composition is different from the imidazole compound having an aromatic skeleton contained in the curable composition. As for the imidazole compound which has the said aromatic skeleton, only 1 type may be used and 2 or more types may be used together.
  • the aromatic skeleton examples include an aryl skeleton, a naphthalene skeleton, and an anthracene skeleton. From the viewpoint of effectively increasing the conductivity between the copper electrodes, the aromatic skeleton is preferably an aryl skeleton, and more preferably a phenyl skeleton.
  • Examples of the imidazole compound having an aromatic skeleton include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-benzyl-2-methyl.
  • the content of the imidazole compound having an aromatic skeleton with respect to 100 parts by weight of the thermosetting compound is preferably 0.1 parts by weight or more, more preferably 0.5 parts by weight or more, preferably 10 parts by weight or less. More preferably, it is 5 parts by weight or less.
  • the content of the imidazole compound having an aromatic skeleton is not less than the above lower limit and not more than the above upper limit, the fast curability of the composition and the conductivity between the copper electrodes are improved in a well-balanced manner.
  • the curable composition may further contain a flux, an adhesive strength adjusting agent, an inorganic filler, a solvent, a storage stabilizer, an ion scavenger, a silane coupling agent, or the like as necessary.
  • the curable compound preferably contains a flux. Use of the flux further increases the conductivity of the copper electrode.
  • a known flux can be used as the flux. As for the said flux, only 1 type may be used and 2 or more types may be used together.
  • the above flux is not particularly limited.
  • the flux it is possible to use a flux generally used for soldering or the like.
  • the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, phosphoric acid, a derivative of phosphoric acid, an organic halide, hydrazine, an organic acid, and pine resin. Etc.
  • Examples of the molten salt include ammonium chloride.
  • Examples of the organic acid include lactic acid, citric acid, stearic acid, and glutamic acid.
  • Examples of the pine resin include activated pine resin and non-activated pine resin.
  • the flux is preferably rosin. By using rosin, the connection resistance between the electrodes is further reduced.
  • the above rosins are rosins whose main component is abietic acid.
  • the flux is preferably a rosin, and more preferably abietic acid. By using this preferable flux, the connection resistance between the electrodes is further reduced.
  • the flux is preferably an organic acid having a carboxyl group.
  • the compound having a carboxyl group include a compound having a carboxyl group bonded to an alkyl chain and a compound having a carboxyl group bonded to an aromatic ring. In these compounds having a carboxyl group, a hydroxyl group may be further bonded to an alkyl chain or an aromatic ring.
  • the number of carboxyl groups bonded to the alkyl chain or aromatic ring is preferably 1 to 3, more preferably 1 or 2.
  • the number of carbon atoms in the alkyl chain in the compound in which a carboxyl group is bonded to the alkyl chain is preferably 3 or more, preferably 8 or less, more preferably 6 or less.
  • Specific examples of the compound having a carboxyl group bonded to an alkyl chain include hexanoic acid (5 carbon atoms, 1 carboxyl group), glutaric acid (4 carbon atoms, 2 carboxyl groups), and the like.
  • Specific examples of the compound having a carboxyl group and a hydroxyl group include malic acid and citric acid.
  • Specific examples of the compound having a carboxyl group bonded to an aromatic ring include benzoic acid, phthalic acid, benzoic anhydride, and phthalic anhydride.
  • the content of the flux is preferably 0.5 parts by weight or more, more preferably 1 part by weight or more, preferably 10 parts by weight or less, more preferably 5 parts by weight or less with respect to 100 parts by weight of the thermosetting compound. is there.
  • the content of the flux is not less than the above lower limit and not more than the upper limit, the effect of adding the flux is more effectively exhibited. For this reason, the flux effect in a composition becomes high, for example, the electroconductivity of a copper electrode becomes still higher.
  • the curable composition for electronic parts containing conductive particles
  • the curable composition can be used as a conductive material.
  • the conductive material is preferably an anisotropic conductive material.
  • the conductive particles electrically connect the electrodes of the connection target members.
  • the conductive particles electrically connect, for example, electrodes between a circuit board and a semiconductor chip.
  • the conductive particles are not particularly limited as long as they are conductive particles.
  • the said electroconductive particle should just have an electroconductive part on the electroconductive surface.
  • Examples of the conductive particles include organic particles, inorganic particles other than metal particles, organic-inorganic hybrid particles, or metal particles whose surfaces are covered with a conductive layer (metal layer), or substantially only metal. Examples thereof include metal particles.
  • FIG. 3 is a sectional view showing conductive particles that can be used in the curable composition for electronic parts according to one embodiment of the present invention.
  • the 3 has resin particles 22 (base material particles) and a conductive layer 23 disposed on the surface 22a of the resin particles 22.
  • the conductive layer 23 covers the surface 22 a of the resin particle 22.
  • the conductive particles 21 are coated particles in which the surface 22 a of the resin particle 22 is covered with the conductive layer 23. Accordingly, the conductive particles 21 have the conductive layer 23 on the surface 21a.
  • metal particles or the like may be used.
  • the conductive layer 23 includes a first conductive layer 24 disposed on the surface 22 a of the resin particle 22 and a solder layer 25 (solder, second conductive layer) disposed on the surface 24 a of the first conductive layer 24. ).
  • the outer surface layer of the conductive layer 23 is a solder layer 25. Therefore, the conductive particles 21 have the solder layer 25 as a part of the conductive layer 23, and further, the first is separated from the resin layer 22 and the solder layer 25 as a part of the conductive layer 23.
  • the conductive layer 24 is provided.
  • the conductive layer 23 may have a multilayer structure, or may have a stacked structure of two or more layers.
  • the conductive layer 23 has a two-layer structure.
  • the conductive particles 31 may have a solder layer 32 as a single conductive layer.
  • the at least outer surface layer (surface) of the conductive layer in the conductive particles may be a solder layer (solder).
  • the conductive particles 21 are preferable among the conductive particles 21 and the conductive particles 31 because the conductive particles can be easily produced.
  • the conductive particles 41 that are solder particles that do not have the core particles in the core and are not core-shell particles may be used.
  • the conductive particles 41 are also formed of solder at the center.
  • Conductive particles 21, 31, 41 can be used for the conductive material.
  • the conductive part is not particularly limited. Gold, silver, copper, nickel, palladium, tin, etc. are mentioned as a metal which comprises the said electroconductive part.
  • Examples of the conductive layer include a gold layer, a silver layer, a copper layer, a nickel layer, a palladium layer, or a conductive layer containing tin.
  • the conductive particle is composed of a resin particle and a conductive layer (on the surface of the resin particle ( First conductive layer).
  • the conductive particles are preferably conductive particles having at least a conductive outer surface of a low melting point metal layer.
  • the conductive particles include base particles and a conductive layer disposed on the surface of the base particles, and at least the outer surface of the conductive layer. Is more preferably a low melting point metal layer. More preferably, the conductive particles include resin particles and a conductive layer disposed on the surface of the resin particles, and at least the outer surface of the conductive layer is a low melting point metal layer.
  • the low melting point metal layer is a layer containing a low melting point metal.
  • the low melting point metal is a metal having a melting point of 450 ° C. or lower.
  • the melting point of the low melting point metal is preferably 300 ° C. or lower, more preferably 160 ° C. or lower.
  • the low melting point metal preferably contains tin. In 100% by weight of the metal contained in the low melting point metal, the content of tin is preferably 30% by weight or more, more preferably 40% by weight or more, still more preferably 70% by weight or more, and particularly preferably 90% by weight or more. When the content of tin in the low melting point metal is not less than the lower limit, the connection reliability between the low melting point metal and the electrode is further enhanced.
  • the tin content is determined using a high-frequency inductively coupled plasma emission spectrometer (“ICP-AES” manufactured by Horiba, Ltd.) or a fluorescent X-ray analyzer (“EDX-800HS” manufactured by Shimadzu). It can be measured.
  • the conductive particles are preferably conductive particles whose outer surface of the conductive material is solder.
  • the outer surface of the conductive part is a low melting point metal layer
  • the low melting point metal layer is melted and joined to the electrodes, and the low melting point metal layer conducts between the electrodes.
  • the connection resistance is lowered.
  • the use of conductive particles having at least a conductive outer surface of the low melting point metal layer increases the bonding strength between the low melting point metal layer and the electrode. It becomes difficult to occur, and the conduction reliability is effectively increased.
  • the low melting point metal constituting the low melting point metal layer is not particularly limited.
  • the low melting point metal is preferably tin or an alloy containing tin.
  • the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy.
  • the low melting point metal is preferably tin, a tin-silver alloy, a tin-silver-copper alloy, a tin-bismuth alloy, or a tin-indium alloy because of its excellent wettability with respect to the electrode. More preferred are a tin-bismuth alloy and a tin-indium alloy.
  • the low melting point metal is preferably solder.
  • the material which comprises the said solder is not specifically limited, Based on JIS Z3001: welding terminology, it is preferable that it is a filler material whose liquidus is 450 degrees C or less.
  • the solder composition include metal compositions containing zinc, gold, lead, copper, tin, bismuth, indium and the like. Of these, a tin-indium system (117 ° C. eutectic) or a tin-bismuth system (139 ° C. eutectic) which is low-melting and lead-free is preferable. That is, the solder preferably does not contain lead, and is preferably a solder containing tin and indium or a solder containing tin and bismuth.
  • the low melting point metal is nickel, copper, antimony, aluminum, zinc, iron, gold, titanium, phosphorus, germanium, tellurium, cobalt, bismuth, manganese. Further, it may contain a metal such as chromium, molybdenum and palladium. From the viewpoint of further increasing the bonding strength between the low melting point metal and the electrode, the low melting point metal preferably contains nickel, copper, antimony, aluminum, or zinc.
  • the content of these metals for increasing the bonding strength is 100 wt% of the low-melting point metal, preferably 0.0001 wt% or more, preferably 1% by weight or less.
  • the conductive particles include resin particles and a conductive layer disposed on the surface of the resin particles, and the outer surface of the conductive layer is a low-melting metal layer, and the resin particles and the low-melting metal In addition to the low melting point metal layer, it is preferable to have a second conductive layer between the layers (such as solder layers). In this case, the low melting point metal layer is a part of the entire conductive layer, and the second conductive layer is a part of the entire conductive layer.
  • the second conductive layer different from the low melting point metal layer preferably contains a metal.
  • the metal constituting the second conductive layer is not particularly limited. Examples of the metal include gold, silver, copper, platinum, palladium, zinc, lead, aluminum, cobalt, indium, nickel, chromium, titanium, antimony, bismuth, germanium, cadmium, and alloys thereof. Further, tin-doped indium oxide (ITO) may be used as the metal. As for the said metal, only 1 type may be used and 2 or more types may be used together.
  • the second conductive layer is preferably a nickel layer, a palladium layer, a copper layer or a gold layer, more preferably a nickel layer or a gold layer, and even more preferably a copper layer.
  • the conductive particles preferably have a nickel layer, a palladium layer, a copper layer, or a gold layer, more preferably have a nickel layer or a gold layer, and still more preferably have a copper layer.
  • a low melting point metal layer can be more easily formed on the surface of these preferable conductive layers.
  • the second conductive layer may be a low melting point metal layer such as a solder layer.
  • the conductive particles may have a plurality of low melting point metal layers.
  • the thickness of the low melting point metal layer is preferably 0.1 ⁇ m or more, more preferably 0.5 ⁇ m or more, still more preferably 1 ⁇ m or more, preferably 50 ⁇ m or less, more preferably 10 ⁇ m or less, still more preferably 5 ⁇ m or less, particularly preferably. 3 ⁇ m or less.
  • the conductivity is sufficiently high.
  • the thickness of the low melting point metal layer is not more than the above upper limit, the difference in thermal expansion coefficient between the resin particles and the low melting point metal layer becomes small, and the low melting point metal layer is hardly peeled off.
  • the total thickness of the conductive layer is preferably 0.1 ⁇ m or more, more preferably 0.5 ⁇ m or more, Preferably it is 1 micrometer or more, Preferably it is 50 micrometers or less, More preferably, it is 10 micrometers or less, More preferably, it is 5 micrometers or less, Most preferably, it is 3 micrometers or less.
  • the average particle size of the conductive particles is preferably 100 ⁇ m or less, more preferably 20 ⁇ m or less, still more preferably less than 20 ⁇ m, still more preferably 15 ⁇ m or less, and particularly preferably 10 ⁇ m or less.
  • the average particle diameter of the conductive particles is preferably 0.5 ⁇ m or more, more preferably 1 ⁇ m or more. From the viewpoint of further improving the connection reliability of the connection structure when subjected to a thermal history, the average particle diameter of the conductive particles is particularly preferably 1 ⁇ m or more and 10 ⁇ m or less, and is 1 ⁇ m or more and 4 ⁇ m or less. Most preferred.
  • the average particle size of the conductive particles is also preferably 3 ⁇ m or less.
  • the average particle size of the conductive particles is particularly preferably 1 ⁇ m or more and 100 ⁇ m or less. .
  • the “average particle size” of the conductive particles indicates a number average particle size.
  • the average particle diameter of the conductive particles can be obtained by observing 50 arbitrary conductive particles with an electron microscope or an optical microscope and calculating an average value.
  • the surface of the conductive particles may be insulated with an insulating material such as insulating particles, flux, or the like. It is preferable that the insulating material, the flux, and the like are removed from the connection portion by being softened and flowed by heat at the time of connection. Thereby, the short circuit between electrodes is suppressed.
  • an insulating material such as insulating particles, flux, or the like. It is preferable that the insulating material, the flux, and the like are removed from the connection portion by being softened and flowed by heat at the time of connection. Thereby, the short circuit between electrodes is suppressed.
  • the content of the conductive particles is not particularly limited. In 100% by weight of the curable composition, the content of the conductive particles is preferably 0.1% by weight or more, more preferably 0.5% by weight or more, preferably 40% by weight or less, more preferably 20% by weight. Hereinafter, it is more preferably 15% by weight or less.
  • a conductive particle can be easily arrange
  • the said curable composition can be used in order to adhere
  • the said curable composition is used for the connection of a copper electrode.
  • the curable composition may be a film or a paste.
  • the curable composition is preferably a paste.
  • the initial connection resistance is further reduced.
  • the connection resistance after being exposed to impact or high temperature and high humidity can be effectively kept low.
  • the conductive material can be used as a conductive paste, a conductive film, or the like.
  • the conductive material is used as a conductive film, a film not containing conductive particles may be laminated on the conductive film containing conductive particles.
  • the film includes a sheet.
  • the curable composition is preferably a paste-like conductive paste.
  • the conductive paste is preferably an anisotropic conductive paste.
  • the conductive film is preferably an anisotropic conductive film.
  • the curable composition includes an electrode first connection target member having a first electrode on the surface, a second connection target member having a second electrode on the surface, the first connection target member, and the first connection target member. It is used suitably in order to obtain a connection structure provided with the connection part which has connected 2 connection object members.
  • the connection part is formed by curing the curable composition.
  • at least one of the first electrode and the second electrode is a copper electrode.
  • the first electrode and the second electrode are electrically connected. More preferably, both the first electrode and the second electrode are copper electrodes.
  • connection structure in which the curable composition for electronic parts includes conductive particles, and the first electrode and the second electrode are electrically connected by the conductive particles.
  • the electronic component is provided between the first connection target member having the first electrode on the surface and the second connection target member having the second electrode on the surface.
  • a connecting portion connecting the first connection target member and the second connection target member is formed by curing the curable composition for electronic components, and a step of arranging the curable composition for the electronic component And a step of obtaining a connection structure in which the first electrode and the second electrode are electrically connected.
  • At least one of the first electrode and the second electrode is a copper electrode.
  • the curable composition for electronic parts includes conductive particles, and the first electrode and the second electrode are electrically connected by the conductive particles. It is preferable to obtain a connecting structure.
  • FIG. 1 schematically shows a cross-sectional view of an example of a connection structure using a curable composition according to an embodiment of the present invention.
  • connection structure 1 shown in FIG. 1 is a connection that connects the first connection target member 2, the second connection target member 4, and the first connection target member 2 and the second connection target member 4.
  • Part 3 is a cured product layer and is formed by curing a curable composition for electronic parts (conductive material) including the conductive particles 5.
  • the first connection object member 2 has a plurality of first electrodes 2a on the surface (upper surface).
  • the second connection target member 4 has a plurality of second electrodes 4a on the surface (lower surface). At least one of the first electrode 2a and the second electrode 4a is a copper electrode.
  • the first electrode 2 a and the second electrode 4 a are electrically connected by one or a plurality of conductive particles 5. Therefore, the first and second connection target members 2 and 4 are electrically connected by the conductive particles 5.
  • connection between the first and second electrodes 2a and 4a is usually performed by connecting the first connection target member 2 and the second connection target member 4 with the first and second electrodes 2a through the curable composition. , 4a are overlapped so as to face each other, and then the curable composition is cured by pressurization. Generally, the conductive particles 5 are compressed by pressurization.
  • the first and second connection target members are not particularly limited.
  • the first and second connection target members include electronic components such as semiconductor chips, capacitors, and diodes, and circuit boards such as printed boards, flexible printed boards, glass epoxy boards, and glass boards. Examples include parts.
  • the said curable composition does not need to contain electroconductive particle.
  • the electrodes of the first and second connection target members can be electrically connected, for example, by bringing the electrodes into contact with each other without electrically connecting the electrodes with the conductive particles.
  • FIG. 2 is a cross-sectional view schematically showing a modification of the connection structure shown in FIG.
  • connection structure 11 shown in FIG. 2 is a connection that connects the first connection target member 12, the second connection target member 14, and the first connection target member 12 and the second connection target member 14.
  • Unit 13 The connection part 13 is a hardened
  • the first connection object member 12 has a plurality of first electrodes 12a on the surface (upper surface).
  • the second connection target member 14 has a plurality of second electrodes 14a on the surface (lower surface). At least one of the first electrode 12a and the second electrode 14a is a copper electrode.
  • the first electrode 12a and the second electrode 14a are, for example, bump electrodes.
  • the first electrode 12a and the second electrode 14a are electrically connected to each other without being in contact with conductive particles. Therefore, the 1st, 2nd connection object members 12 and 14 are electrically connected.
  • the conductive material is, for example, a connection between a flexible printed circuit board and a glass substrate (FOG (Film on Glass)), a connection between a semiconductor chip and a flexible printed circuit board (COF ( (Chip on Film)), connection between a semiconductor chip and a glass substrate (COG (Chip on Glass)), connection between a flexible printed circuit board and a glass epoxy substrate (FOB (Film on Board)), or the like.
  • the said electrically-conductive material is suitable for a FOG use or a COG use, and is more suitable for a COG use.
  • the curable composition is preferably a conductive material used for connection between the flexible printed circuit board and the glass substrate, or between the semiconductor chip and the flexible printed circuit board, and is used for connection between the semiconductor chip and the flexible printed circuit board. More preferably, it is a conductive material.
  • Thermosetting compound Thermosetting compound 1 (epoxy group-containing polymer, “MARPROOF G-01100” manufactured by NOF Corporation, weight average molecular weight: 12000, Tg: 47 ° C., epoxy equivalent: 170 g / eq)
  • Thermosetting compound 2 resorcinol type epoxy compound, “EX-201” manufactured by Nagase ChemteX Corporation
  • Thermosetting compound 3 Triazine triglycidyl ether, “TEPIC-SS” manufactured by Nissan Chemical Co., Ltd.
  • Latent curing agent Latent curing agent
  • Latent curing agent 1 inclusion imidazole compound, “TEP-2MZ” manufactured by Nippon Soda Co., Ltd.
  • Latent curing agent 2 epoxy-imidazole adduct, “Cure Duct P-0505” manufactured by Shikoku Kasei Kogyo Co., Ltd.
  • Latent curing agent 3 ((Microcapsule type latent curing agent), “Novacure HX3921HP” manufactured by Asahi Kasei E-Materials)
  • Latent curing agent 4 ((Microcapsule type latent curing agent), “Novacure HX3941HP” manufactured by Asahi Kasei E-Materials)
  • Aromatic skeleton-containing imidazole compound 1 (“2-phenylimidazole” manufactured by Shikoku Chemicals)
  • Aromatic skeleton-containing imidazole compound 2 (“2-phenyl-4-methylimidazole” manufactured by Shikoku Chemicals)
  • Aromatic skeleton-containing imidazole compound 3 (“Benzimidazole” manufactured by Wako Pure Chemical Industries, Ltd.)
  • Aromatic skeleton-containing imidazole compound 4 (“2-methylbenzimidazole” manufactured by Wako Pure Chemical Industries, Ltd.)
  • Conductive particles 1 SnBi solder particles ("Sn58Bi-20” manufactured by Fukuda Metals Co., Ltd., average particle size 4.5 ⁇ m)
  • Conductive particles 2 (resin core solder coated particles, prepared by the following procedure)
  • Divinylbenzene resin particles (“Micropearl SP-207” manufactured by Sekisui Chemical Co., Ltd., average particle diameter 7 ⁇ m, softening point 330 ° C., 10% K value (23 ° C.) 4 GPa) are electroless nickel plated on the surface of the resin particles A base nickel plating layer having a thickness of 0.1 ⁇ m was formed.
  • Conductive particles (average particle size 14 ⁇ m, CV value 22%, resin core solder-coated particles) were prepared.
  • Conductive particles 3 Au plated particles of divinylbenzene resin particles (“Au-210” manufactured by Sekisui Chemical Co., Ltd., average particle size 10 ⁇ m)
  • Filler Nanosilica, “MT-10” manufactured by Tokuyama
  • Adhesive agent KBE-403” manufactured by Shin-Etsu Chemical Co., Ltd.
  • Flux Glutaric acid” manufactured by Wako Pure Chemical Industries, Ltd.
  • Phenoxy resin YP-50S manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.
  • Examples 1 to 21 and Comparative Examples 1 to 3 The components shown in the following Tables 1 to 3 were blended in the blending amounts shown in the following Tables 1 to 3, and stirred at 2000 rpm for 5 minutes using a planetary stirrer to obtain an anisotropic conductive paste.
  • Example 22 10 parts by weight of phenoxy resin (“YP-50S” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) was dissolved in methyl ethyl ketone (MEK) so that the solid content was 50% by weight to obtain a solution.
  • Ingredients other than the phenoxy resin shown in Table 3 below were blended with the amounts shown in Table 3 below and the total amount of the above solution, and after stirring for 5 minutes at 2000 rpm using a planetary stirrer, a bar coater was used. It was used and coated on a release PET (polyethylene terephthalate) film so that the thickness after drying was 30 ⁇ m.
  • An anisotropic conductive film was obtained by removing MEK by vacuum drying at room temperature.
  • connection structure used in evaluation items (1) to (3): A glass epoxy substrate (FR-4 substrate) having 70 copper electrodes on the upper surface with an electrode pattern having an L / S of 100 ⁇ m / 100 ⁇ m was prepared. Moreover, the flexible printed circuit board which has 70 copper electrodes on the lower surface with the electrode pattern whose L / S is 100 micrometers / 100 micrometers was prepared. The FR-4 substrate and the flexible printed circuit board were designed so that a daisy chain could be formed by overlapping them.
  • the obtained anisotropic conductive paste was applied on the upper surface of the glass epoxy substrate so as to have a thickness of 200 ⁇ m to form an anisotropic conductive paste layer.
  • the flexible printed circuit board was laminated on the anisotropic conductive paste layer so that the electrodes face each other. Then, while adjusting the temperature of the thermocompression bonding head so that the temperature of the anisotropic conductive paste layer becomes 170 ° C. (final pressure bonding temperature), the pressure bonding head is placed on the upper surface of the flexible printed circuit board and a pressure of 1 MPa is applied. Then, the anisotropic conductive paste layer was cured until curing was completed at 170 ° C. to obtain a connection structure (FOB).
  • FAB connection structure
  • connection resistances 20 connection resistances were evaluated by a four-terminal method.
  • the conductivity was determined according to the following criteria.
  • Average value of connection resistance is 8.0 ⁇ or less ⁇ : Average value of connection resistance exceeds 8.0 ⁇ and 10.0 ⁇ or less ⁇ : Average value of connection resistance exceeds 10.0 ⁇ and 15.0 ⁇ or less ⁇ Average connection resistance exceeds 15.0 ⁇
  • Thermal shock resistance was determined according to the following criteria.
  • connection resistance In all 10 connection structures, the rate of increase in connection resistance from the connection resistance before the thermal cycle test is 5% or less.
  • Connection resistance before the thermal cycle test in all 10 connection structures. The connection resistance rise rate from 5 to exceeds 10% and 10% or less ⁇ : Of 10 connection structures, the connection structure from which the connection resistance increase rate before the thermal cycle test exceeds 10% Have more than one body
  • the moisture and heat resistance was evaluated by a bias test. Specifically, a glass epoxy substrate (FR-4 substrate) having 70 comb-shaped copper electrode patterns with L / S of 100 ⁇ m / 100 ⁇ m on the upper surface was prepared. Moreover, the flexible printed circuit board which has 70 comb-shaped copper electrode patterns with L / S of 100 micrometers / 100 micrometers on the lower surface was prepared. A connection structure was obtained by the same method as that for producing the connection structure used for the evaluation items (1) to (3). The patterns of the FR-4 substrate and the flexible printed circuit board were designed so that a comb pattern could be formed by overlapping. Wet heat resistance was determined according to the following criteria.
  • Resistance value is 10 8 ⁇ or more ⁇ : Resistance value is 5 ⁇ 10 7 ⁇ or more, less than 10 8 ⁇ ⁇ : Resistance value is 10 7 ⁇ or more, less than 5 ⁇ 10 7 ⁇ ⁇ : Resistance value is 10 7 ⁇ Less than
  • Viscosity after standing for 48 hours / initial viscosity is less than 1.2
  • Viscosity after standing for 48 hours / initial viscosity is 1.2 or more and less than 1.5
  • Viscosity after standing for 48 hours / initial Viscosity is 1.5 or more
  • Viscosity after standing for 48 hours / initial viscosity is less than 1.2
  • Viscosity after standing for 48 hours / initial viscosity is 1.2 or more and less than 1.35
  • connection structure using the glass epoxy board (connection object member) which has a copper electrode on the upper surface, and the flexible printed circuit board (connection object member) which has a copper electrode on the lower surface was shown. Even when only one of these two connection target members is a copper electrode and the remaining is an aluminum electrode, the evaluation results having the same tendency as the evaluation results shown in Tables 1 to 3 can be obtained. confirmed. In addition, when both the electrodes of these two connection object members were aluminum electrodes, the difference in the evaluation result of an Example and a comparative example was small.

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Abstract

L'invention porte sur une composition durcissable qui est destinée à un composant électronique, qui peut être rapidement durcie et en outre qui peut avoir une conductivité accrue même lorsqu'elle est connectée à une électrode en cuivre. La composition durcissable destinée à un composant électronique est utilisée lors de la connexion à une électrode en cuivre. La composition durcissable destinée à un composant électronique contient un composé thermodurcissable, un agent durcisseur latent et un composé imidazole ayant un squelette aromatique.
PCT/JP2014/050616 2013-01-17 2014-01-16 Composition durcissable pour composant électronique, structure de connexion et procédé pour la production d'une structure de connexion WO2014112541A1 (fr)

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KR1020157002632A KR20150109322A (ko) 2013-01-17 2014-01-16 전자 부품용 경화성 조성물, 접속 구조체 및 접속 구조체의 제조 방법
CN201480002105.9A CN104540869B (zh) 2013-01-17 2014-01-16 电子部件用固化性组合物、连接结构体及连接结构体的制造方法
JP2014504102A JP5681327B2 (ja) 2013-01-17 2014-01-16 電子部品用硬化性異方性導電材料、接続構造体及び接続構造体の製造方法

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WO2016190244A1 (fr) * 2015-05-25 2016-12-01 積水化学工業株式会社 Matériau électroconducteur et structure de connexion
WO2017029993A1 (fr) * 2015-08-19 2017-02-23 積水化学工業株式会社 Matériau électriquement conducteur, et structure connectrice
WO2017033930A1 (fr) * 2015-08-24 2017-03-02 積水化学工業株式会社 Matériau électroconducteur et structure de connexion
JP2018131569A (ja) * 2017-02-16 2018-08-23 パナソニックIpマネジメント株式会社 導電性粒子を含む樹脂組成物
US20210375804A1 (en) * 2020-06-01 2021-12-02 Samsung Display Co., Ltd. Display device and method of manufacturing the same
WO2023166973A1 (fr) * 2022-03-02 2023-09-07 ナミックス株式会社 Composition de résine durcissable, adhésif, produit durci, module de caméra et dispositif électronique

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KR20180024099A (ko) * 2016-08-26 2018-03-08 삼성디스플레이 주식회사 접합 조립체 및 이를 포함하는 표시 장치
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