WO2014104035A1 - Substrat réfléchissant - Google Patents

Substrat réfléchissant Download PDF

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Publication number
WO2014104035A1
WO2014104035A1 PCT/JP2013/084533 JP2013084533W WO2014104035A1 WO 2014104035 A1 WO2014104035 A1 WO 2014104035A1 JP 2013084533 W JP2013084533 W JP 2013084533W WO 2014104035 A1 WO2014104035 A1 WO 2014104035A1
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Prior art keywords
metal
inorganic
reflective
substrate
phosphate
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PCT/JP2013/084533
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English (en)
Japanese (ja)
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優介 畠中
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富士フイルム株式会社
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Publication of WO2014104035A1 publication Critical patent/WO2014104035A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/017—Glass ceramic coating, e.g. formed on inorganic substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0209—Inorganic, non-metallic particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2054—Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics

Definitions

  • the present invention relates to a reflective substrate, and more specifically to a reflective substrate used for mounting a light emitting element such as a light emitting diode (hereinafter referred to as “LED”).
  • a light emitting element such as a light emitting diode (hereinafter referred to as “LED”).
  • LEDs are said to have a power consumption of 1/100 and a lifespan of 40 times (40000 hours) compared to fluorescent lamps.
  • Such a feature of power saving and long life is an important factor in adopting LEDs in an environment-oriented flow.
  • white LEDs are excellent in color rendering properties and have a merit that a power supply circuit is simpler than fluorescent lamps, and therefore, expectations for light sources for illumination are increasing.
  • white LEDs (30 to 150 Lm / W) with high luminous efficiency, which are required as illumination light sources, have appeared one after another, and in terms of light use efficiency in practical use, the fluorescent lamps (20 to 110 Lm / W) have been reversed. is doing.
  • the flow of practical use of white LEDs instead of fluorescent lamps has increased rapidly, and the number of cases in which white LEDs are employed as backlights or illumination light sources for liquid crystal display devices is increasing.
  • Patent Document 1 discloses that “an inorganic reflective layer is provided on at least a part of a valve metal substrate, and the inorganic reflective layer is made of aluminum phosphate, aluminum chloride, and sodium silicate.
  • the inorganic reflective layer is made of aluminum phosphate, aluminum chloride, and sodium silicate.
  • For light-emitting elements comprising at least one inorganic binder selected from the group consisting of and inorganic particles having a refractive index of 1.5 to 1.8 and an average particle size of 0.1 to 5 ⁇ m Reflective substrate "is described.
  • an object of the present invention is to provide a reflective substrate that is excellent in heat dissipation and adhesiveness with an inorganic reflective layer.
  • the inventor of the present invention provides a metal having high thermal conductivity by providing an inorganic reflective layer containing a specific inorganic binder containing a metal phosphate or the like together with inorganic particles.
  • the inventors have found that the adhesiveness is excellent also with respect to the substrate, and completed the present invention. That is, the present invention provides a reflective substrate having the following configuration.
  • the metal substrate is composed of at least one metal selected from the group consisting of gold, silver and copper;
  • the metal phosphate is at least one selected from the group consisting of gold phosphate, silver phosphate, and copper phosphate.
  • the present invention it is possible to provide a reflective substrate that is excellent in heat dissipation and adhesiveness with an inorganic reflective layer.
  • the reflective substrate of the present invention has a metal base material and an inorganic reflective layer provided on at least a part of the surface of the metal base material, and the metal base material is selected from the group consisting of gold, silver and copper.
  • FIG. 1 is a schematic cross-sectional view showing an example of a preferred embodiment of the reflective substrate of the present invention.
  • the reflective substrate 1 of the present invention has a metal base 2 and an inorganic reflective layer 3 provided on at least a part of the surface of the metal base 2, and the inorganic reflective layer 3 is inorganic.
  • the metal substrate used for the reflective substrate of the present invention is not particularly limited as long as it is composed of at least one metal selected from the group consisting of gold, silver, and copper.
  • “consisting of metal” means not only a metal substrate composed of only the above metal but also a metal substrate composed of an alloy of these metals (for example, an alloy of copper and silver). Is included.
  • a metal substrate composed of such a metal the heat dissipation of the reflective substrate of the present invention is improved.
  • copper is preferable from the viewpoints of easy workability and high weather resistance.
  • the thickness of the metal substrate is preferably 0.1 to 3 mm, more preferably 0.15 to 1.5 mm, for the reason that heat dissipation is better. More preferably, it is 1.0 mm. This thickness can be appropriately changed according to the user's wishes or the like.
  • a numerical range represented by using “to” means a range including numerical values described before and after “to” as a lower limit value and an upper limit value.
  • the inorganic reflective layer included in the reflective substrate of the present invention is a reflective layer containing an inorganic binder containing phosphoric acid and / or a metal phosphate and inorganic particles.
  • an inorganic binder containing phosphoric acid and / or a metal phosphate and inorganic particles containing phosphoric acid and / or a metal phosphate and inorganic particles.
  • the inorganic binder contained in the inorganic reflective layer is not particularly limited as long as it contains at least phosphoric acid and / or a metal phosphate.
  • the adhesiveness between the inorganic reflective layer and the metal substrate is improved. This is because the inorganic binder binds inorganic particles to be described later, and also enters the gap between the metal substrate and the inorganic particles, and reacts with the metal substrate when forming the inorganic reflective layer. It is thought that a network of phosphate bonds is formed also at the interface, and a stronger bond is expressed.
  • the inorganic binder preferably contains 50% by mass or more of phosphoric acid and / or metal phosphate, more preferably 80% by mass or more, and 100% by mass, that is, the inorganic binder. It is more preferable to use only phosphoric acid and / or metal phosphate.
  • the phosphoric acid metal salt is not particularly limited, and examples of the phosphoric acid in the phosphoric acid metal salt include phosphoric acid, metaphosphoric acid, orthophosphoric acid, polyphosphoric acid, sesquiphosphoric acid, and the like.
  • the metal in the phosphoric acid metal salt For example, gold, silver, copper, aluminum, zirconium, titanium, zinc, cerium, and the like can be given.
  • the metal phosphate a combination of these can be used as appropriate.
  • the phosphoric acid metal salt is the above-described phosphoric acid and an oxide or hydroxide containing the above-described metal (for example, gold hydroxide, silver oxide, copper hydroxide, aluminum hydroxide) in the presence of water. It can be obtained by reaction.
  • the metal phosphate is preferably gold phosphate, silver phosphate, copper phosphate, or aluminum phosphate.
  • gold phosphate and silver phosphate are preferable because the adhesion between the inorganic reflective layer and the metal substrate is better, and the adhesion to the metal wiring layer (wiring adhesion) is unexpectedly better. More preferably, it is copper phosphate.
  • the metal constituting the metal substrate and the metal constituting the metal phosphate are the same type of metal because the adhesion between the inorganic reflective layer and the metal substrate is better. Is preferred. Among these, for reasons such as easy workability and high weather resistance, a mode in which a copper base is used as the metal base and copper phosphate is used as the inorganic binder (phosphate metal salt) is more preferable.
  • sodium silicate as an inorganic binder, sodium silicate as an optional component may be used in combination with the above-described phosphoric acid and / or metal phosphate.
  • the above-mentioned sodium silicate is also called sodium silicate or water glass, and Na 2 SiO 3, which is a sodium salt of metasilicate, is commonly used.
  • Na 4 SiO 4 , Na 2 Si 2 O 5 , Na 2 Si 4 O 9 or the like can also be used.
  • the sodium salt of metasilicic acid can be obtained by melting silicon dioxide with sodium carbonate or sodium hydroxide.
  • content in the case of using sodium silicate together is less than 50 mass% with respect to the total mass of an inorganic binder.
  • aluminum chloride in the present invention, as the inorganic binder, aluminum chloride may be used in combination with the above-described phosphoric acid and / or metal phosphate as an optional component.
  • the aluminum chloride may be any of anhydrous aluminum chloride, aluminum chloride hexahydrate, and polyaluminum chloride (a polymer of basic aluminum chloride formed by dissolving aluminum hydroxide in hydrochloric acid).
  • content in the case of using aluminum chloride together is less than 50 mass% with respect to the total mass of an inorganic binder.
  • the inorganic particles contained in the inorganic reflective layer are not particularly limited, but are preferably inorganic particles having a refractive index of 1.5 to 1.8 and an average particle diameter of 0.1 ⁇ m to 5 ⁇ m.
  • the refractive index means a value measured at 25 ° C. according to “5. Measuring method of solid sample” of JIS K 0062: 1992.
  • the average particle diameter refers to the average value of the particle diameters of the inorganic particles. In the present invention, the average particle diameter refers to a 50% volume cumulative diameter (D50) measured using a laser diffraction particle size distribution analyzer.
  • the reflectance of the reflective substrate of the present invention is increased, and the inorganic binder described above is a gap between inorganic particles or an inorganic particle and a metal group. Since it can enter into the gap with the material, the strength of the inorganic reflective layer is improved, and the adhesion between the inorganic reflective layer and the metal substrate is improved.
  • the refractive index of the inorganic particles is preferably 1.55 or more and 1.75 or less, and the strength of the inorganic reflection layer and the adhesion between the inorganic reflection layer and the metal substrate.
  • the average particle diameter of the inorganic particles is preferably 0.5 to 2 ⁇ m.
  • the kind of the inorganic particles is not particularly limited, and conventionally known oxides (for example, metal oxides), hydroxides (for example, metal hydroxides), inorganic salts (for example, carbonates, sulfates, etc.) , Fluoride (eg, lanthanum fluoride), silicon dioxide (silica), and the like can be used.
  • oxides, hydroxides, and inorganic salts are preferred because the reflectance of the reflective substrate of the present invention is high.
  • two or more kinds of particles or two or more kinds of particles having an average particle diameter may be used in combination as the inorganic particles.
  • particles having different types and average particle diameters in combination it is possible to improve the strength of the inorganic reflective layer and further improve the adhesion between the inorganic reflective layer and the metal substrate.
  • the shape of the inorganic particles is not particularly limited.
  • the shape is spherical, polyhedral (for example, icosahedron, dodecahedron, etc.), cubic, tetrahedral, or uneven on the surface of the sphere.
  • a shape having a plurality of convex protrusions hereinafter also referred to as “compete shape”
  • a plate shape, a needle shape, or the like may be used.
  • spherical, polyhedral, cubic, tetrahedral, and complex shapes are preferred for the reason of excellent heat insulation, and spherical is more preferred for reasons of easy availability and excellent heat insulation.
  • the inorganic reflective layer containing the inorganic binder and inorganic particles described above is preferably provided on the surface of the metal substrate in an amount such that the mass after heat drying is 20 g / m 2 to 500 g / m 2 .
  • the content of the inorganic binder and the inorganic particles in the inorganic reflective layer is preferably 5 to 100 parts by mass of the inorganic binder with respect to 100 parts by mass of the inorganic particles. Is more preferable.
  • the inorganic reflective layer may contain other compounds in addition to the inorganic binder and the inorganic particles. Examples of other compounds include a dispersant and a reaction accelerator.
  • the method for forming the inorganic reflective layer is not particularly limited.
  • a coating liquid (composition) containing the inorganic particles and the inorganic binder is screened on the surface of the metal substrate. It can be formed by a method such as applying and drying by printing or the like, and specifically, a method described in [0021] to [0023] of Patent Document 1.
  • the reflective substrate of the present invention has an arithmetic average roughness Ra (hereinafter referred to as the surface of the inorganic reflective layer), that is, the surface (excluding the surface of the portion where the light emitting element is mounted when the light emitting element is mounted).
  • Ra arithmetic average roughness
  • Psm the average interval
  • Ra and Psm refer to surface property parameters described in JIS B0601: 2001, and in the present invention, both are stylus type surface roughness meters (for example, SURFCOM 480A, (Manufactured by Tokyo Seimitsu Co., Ltd.).
  • Ra of the surface of the reflective substrate is in the above range, the regular reflectance and the diffuse reflectance are good, and a reflective substrate for a light emitting device that can achieve high light emission efficiency can be obtained.
  • Psm on the surface of the reflective substrate is in the above range, the diffuse reflectance is improved, and the ratio of diffuse reflectance to regular reflectance (diffuse reflectance / regular reflectance) is to be greater than 95%. Can do.
  • Ra on the surface of the reflective substrate is preferably 0.65 to 0.90 ⁇ m, and Psm on the surface of the reflective substrate is preferably 10 to 15 ⁇ m.
  • the reflective substrate of the present invention may have a wiring layer (metal wiring layer) when mounting the light emitting element.
  • the wiring layer may be provided on a part of the surface on which the light emitting element is mounted, or the surface on which the light emitting element is mounted (hereinafter referred to as “mounting surface” in this paragraph). .) May be provided on a part of the front surface (back surface) opposite to that and electrically connected to the mounting surface of the LED light emitting element via a through hole.
  • the material of the wiring layer is not particularly limited as long as it is a material that conducts electricity. Specific examples thereof include gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), Nickel (Ni) etc. are mentioned, These may be used individually by 1 type and may use 2 or more types together. Of these, Cu is preferably used because of its low electrical resistance. Note that an Au layer or a Ni / Au layer may be provided on the surface layer of the wiring layer made of Cu from the viewpoint of improving the ease of wire bonding.
  • the thickness of the wiring layer is preferably 0.5 to 1000 ⁇ m, more preferably 1 to 500 ⁇ m, and particularly preferably 5 to 250 ⁇ m from the viewpoint of conduction reliability and package compactness.
  • the wiring layer in addition to various plating processes such as an electrolytic plating process, an electroless plating process, and a displacement plating process, a sputtering process, a vapor deposition process, a vacuum bonding process for metal foil, and an adhesion process with an adhesive layer provided. Etc.
  • various plating processes such as an electrolytic plating process, an electroless plating process, and a displacement plating process, a sputtering process, a vapor deposition process, a vacuum bonding process for metal foil, and an adhesion process with an adhesive layer provided.
  • Etc Among these, from the viewpoint of high heat resistance, the metal-only layer formation is preferable, and from the viewpoint of thick film / uniform formation and high adhesion, layer formation by plating is particularly preferable.
  • the plating process is a plating process for an inorganic material, it is preferable to use a technique in which a reduced metal layer called a seed layer is provided and then a thick metal layer is formed using the metal layer.
  • electroless plating for the formation of the seed layer.
  • the plating solution includes a main component (for example, a metal salt and a reducing agent) and an auxiliary component (for example, a pH adjusting agent, a buffering agent, a complex). It is preferable to use a solution composed of an agent, accelerator, stabilizer, improver, etc.
  • SE-650, 666, 680, SEK-670, 797, SFK-63 (all manufactured by Nihon Kanisen Co., Ltd.), Melplate NI-4128, Enplate NI-433, Enplate NI- Commercially available products such as 411 (all manufactured by Meltex Co., Ltd.) can be used as appropriate.
  • various electrolytic solutions containing sulfuric acid, copper sulfate, hydrochloric acid, polyethylene glycol and a surfactant as main components and other various additives can be used.
  • the wiring layer thus formed is patterned by a known method according to the mounting design of the light emitting element. Further, a metal layer (including solder) is again provided at a place where the light emitting element is actually mounted, and can be appropriately processed so as to be easily connected by thermocompression bonding, flip chip, wire bonding, or the like.
  • a metal layer a metal material such as solder or gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), nickel (Ni) is preferable. From the viewpoint of mounting reliability, a method of providing Au or Ag via solder or Ni is preferable from the viewpoint of connection reliability.
  • a wiring layer having a pattern can be easily formed without requiring many steps on an uneven surface. Can be formed.
  • a wiring layer can be formed on a desired portion of the surface of the reflective substrate by ink jet printing using a metal ink containing a conductive metal. Specifically, a wiring pattern is formed with metal ink, and then fired to form a wiring.
  • the metal ink include those obtained by uniformly dispersing fine particles of a conductive metal in a solvent containing a binder, a surfactant, and the like. In this case, the solvent needs to have both affinity for the conductive metal and volatility.
  • Conductive metals contained in the metal ink include fine particles of metals such as silver, copper, gold, platinum, nickel, aluminum, iron, palladium, chromium, molybdenum, tungsten; silver oxide, cobalt oxide, iron oxide, ruthenium oxide, etc.
  • metal fine particles are preferable, silver, copper, and gold are more preferable, oxidation resistance is excellent, it is difficult to form a high-insulation oxide, and the cost is low, and the conductivity after firing the wiring pattern is improved. For this reason, silver is particularly preferable.
  • the shape of the conductive metal that is a fine particle is not particularly limited, and examples thereof include a spherical shape, a granular shape, and a scaly shape. From the viewpoint of increasing the contact area between the fine particles and improving the conductivity, the scaly shape is preferable. preferable.
  • the average size of the conductive metal contained in the metal ink is preferably 1 to 20 nm, and more preferably 5 to 10 nm from the viewpoint of improving the conductivity by increasing the filling rate in the wiring pattern formed with the metal ink.
  • a wiring pattern is formed on a desired portion of the surface of the reflective substrate by screen printing using a metal ink containing a conductive metal, and then fired to form a wiring.
  • the supply of the metallic ink by the screen printing method can be performed by providing a transmissive portion according to the wiring pattern on the screen and squeezing the metallic ink from the transmissive portion.
  • a metal ink containing a conductor metal what was used by the inkjet printing method mentioned above can be used.
  • the LED package of the present invention is an LED package having the above-described reflective substrate of the present invention and an LED light emitting element mounted on the surface thereof. Next, the configuration of the LED package of the present invention will be described with reference to FIG.
  • FIG. 2 is a schematic cross-sectional view showing an example of a preferred embodiment of the LED package of the present invention.
  • the LED package 20 has an LED light emitting element 12 mounted on the surface (inorganic reflective layer 3) of the reflective substrate 1 with an adhesive 11.
  • the LED light emitting element 12 is molded with a transparent resin 14 mixed with fluorescent particles 13 and wire-bonded to the reflective substrate 1 of the present invention having the metal wiring layer 10 also serving as an electrode for external connection.
  • the LED light emitting element is a substrate in which a semiconductor such as GaAlN, ZnS, ZnSe, SiC, GaP, GaAlAs, AlN, InN, AlInGaP, InGaN, GaN, and AlInGaN is formed as a light emitting layer on a substrate.
  • a semiconductor such as GaAlN, ZnS, ZnSe, SiC, GaP, GaAlAs, AlN, InN, AlInGaP, InGaN, GaN, and AlInGaN is formed as a light emitting layer on a substrate.
  • the semiconductor structure include a homostructure, a heterostructure, or a double heterostructure having a MIS junction, a PIN junction, or a PN junction.
  • Various emission wavelengths can be selected from ultraviolet light to infrared light depending on the material of the semiconductor layer and the degree of mixed crystal.
  • the material of the transparent resin is preferably a thermosetting resin.
  • the thermosetting resin is preferably formed of at least one selected from the group consisting of epoxy resins, modified epoxy resins, silicone resins, modified silicone resins, acrylate resins, urethane resins, and polyimide resins. , Modified epoxy resin, silicone resin, and modified silicone resin are preferable.
  • the transparent resin is preferably hard to protect the blue LED. Moreover, it is preferable to use resin excellent in heat resistance, a weather resistance, and light resistance for transparent resin.
  • the transparent resin may be mixed with at least one selected from the group consisting of a filler, a diffusing agent, a pigment, a fluorescent material, a reflective material, an ultraviolet absorber, and an antioxidant so as to have a predetermined function. it can.
  • the said fluorescent particle should just absorb the light from blue LED and wavelength-convert it into the light of a different wavelength.
  • Specific examples of the fluorescent particles include nitride-based phosphors, oxynitride-based phosphors, sialon-based phosphors, and ⁇ -sialon-based phosphors that are mainly activated by lanthanoid elements such as Eu and Ce.
  • the LED package of the present invention can also be used as a phosphor-mixed white LED package using an ultraviolet to blue LED and a fluorescent light emitter that absorbs the LED and emits fluorescence in the visible light region.
  • These fluorescent light emitters absorb blue light from the blue LED to generate fluorescence (yellowish fluorescent light), and white light is emitted from the light emitting element by the fluorescent light and the afterglow of the blue LED.
  • the above-described method is a so-called “pseudo white light emission type” in which a blue LED light source chip and one kind of yellow phosphor are combined.
  • an ultraviolet to near ultraviolet LED light source chip and a red / green / blue fluorescence for example, an ultraviolet to near ultraviolet LED light source chip and a red / green / blue fluorescence.
  • the LED of the present invention as a light-emitting unit using a known light-emitting method such as “ultraviolet to near-ultraviolet light source type” in which several kinds of bodies are combined and “RGB light source type” that emits white light with three red / green / blue light sources Package can be used.
  • a known light-emitting method such as “ultraviolet to near-ultraviolet light source type” in which several kinds of bodies are combined and “RGB light source type” that emits white light with three red / green / blue light sources Package can be used.
  • the method of mounting the LED light emitting element on the reflective substrate of the present invention involves mounting by heating, but the thermocompression bonding including solder reflow and the mounting method by flip chip provide uniform and reliable mounting.
  • the maximum reached temperature is preferably 220 to 350 ° C, more preferably 240 to 320 ° C, and particularly preferably 260 to 300 ° C.
  • the time for maintaining these maximum temperatures is preferably 2 seconds to 10 minutes, more preferably 5 seconds to 5 minutes, and particularly preferably 10 seconds to 3 minutes.
  • the temperature at the time of mounting by wire bonding is preferably 80 to 300 ° C., more preferably 90 to 250 ° C., and particularly preferably 100 to 200 ° C. from the viewpoint of reliable mounting.
  • the heating time is preferably 2 seconds to 10 minutes, more preferably 5 seconds to 5 minutes, and particularly preferably 10 seconds to 3 minutes.
  • Binder liquids A to D used for the inorganic reflection layer forming solution were prepared.
  • Examples 1 to 19 and Comparative Examples 1 to 5 An inorganic reflective layer forming solution was prepared by adding 100 g of inorganic particles shown in Table 1 below to 100 g of binder liquid having the composition shown in Table 1 below and stirring. After the prepared inorganic reflective layer forming solution is applied on the metal substrate shown in Table 1 below to form a coating film, the inorganic reflective layer is formed on the metal substrate by drying at 200 ° C. for 5 minutes. A reflective substrate was prepared. The presence of the metal phosphate (inorganic binder) in the inorganic reflective layer was confirmed by infrared spectroscopy (IR).
  • IR infrared spectroscopy
  • Thermal conductivity ⁇ ⁇ ⁇ Cp ⁇ ⁇ (In the formula, ⁇ represents thermal diffusivity, Cp represents specific heat, and ⁇ represents density.)
  • Ag wiring (wiring width: 100 ⁇ m) was formed by droplet ejection with 10 patterns. Thereafter, the entire reflective substrate was pressed with a roller to flatten the surface of the Ag wiring, and a nickel layer was formed on the Ag wiring.
  • an electroless nickel plating solution ICP-Nicolon GM (NP) manufactured by Okuno Pharmaceutical Co., Ltd.
  • Aluminum oxide (refractive index: 1.65, average particle size: 4.70 ⁇ m): A42-2 (manufactured by Showa Denko KK) Calcium hydroxide (refractive index: 1.57, average particle size: 1.00 ⁇ m): CSH (manufactured by Ube Materials Corporation) Barium sulfate (refractive index: 1.64, average particle size: 0.30 ⁇ m): B-30 (manufactured by Toshin Kasei Co., Ltd.) Lanthanum fluoride (refractive index: 1.59, average particle size: 0.90 ⁇ m): # 124-03532 (manufactured by Wako Pure Chemical Industries, Ltd.) Barium carbonate (refractive index: 1.60, average particle size: 0.85 ⁇ m): # 022-111792 (manufactured by Wako Pure Chemical Industries, Ltd.) Silicon dioxide (refractive index: 1.45, average particle size: 0.80 ⁇ m): # 199-00625 (manufactured
  • Example 1 and Example 16 it was found that the heat dissipation was further improved when the thickness of the metal substrate was 0.10 to 3 mm. Further, in comparison with Example 1 and Example 17, when the arithmetic average roughness Ra of the surface is 0.50 to 1.00 ⁇ m and the average interval Psm of the unevenness is 10 to 20 ⁇ m, the metal wiring layer It was found that the adhesiveness (wiring adhesiveness) was improved. Further, from the comparison between Example 1 and Examples 18 and 19, when the refractive index of the inorganic particles is 1.5 or more and 1.8 or less and the average particle diameter is 0.1 ⁇ m or more and 5 ⁇ m or less, reflection It was found that the rate was improved.

Abstract

L'objet de la présente invention est de pourvoir à un substrat réfléchissant qui présente d'excellentes propriétés de dissipation de chaleur, tout en présentant une excellente adhésion à une couche réfléchissante inorganique. Un substrat réfléchissant selon la présente invention comprend une base métallique et une couche réfléchissante inorganique qui est prévue sur au moins une partie de la surface de la base métallique. La base métallique contient au moins un métal qui est choisi dans le groupe constitué par l'or, l'argent et le cuivre. La couche réfléchissante inorganique contient des particules inorganiques et un liant inorganique qui contient de l'acide phosphorique et/ou un phosphate de métal.
PCT/JP2013/084533 2012-12-27 2013-12-24 Substrat réfléchissant WO2014104035A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005089894A (ja) * 2003-09-16 2005-04-07 Kawashima Textile Manuf Ltd 弱紫外線下消臭性布帛
WO2007032167A1 (fr) * 2005-09-16 2007-03-22 Murata Manufacturing Co., Ltd. Substrat multicouche céramique et procede de fabrication idoine
WO2010021089A1 (fr) * 2008-08-21 2010-02-25 パナソニック株式会社 Source de lumière pour éclairage
WO2011138169A1 (fr) * 2010-05-07 2011-11-10 Osram Gesellschaft mit beschränkter Haftung Composant semi-conducteur optoélectronique contenant un phosphate métallique exempt d'alcalins et exempt d'halogènes
WO2012133173A1 (fr) * 2011-03-28 2012-10-04 富士フイルム株式会社 Substrat réfléchissant pour élément électroluminescent et son procédé de fabrication

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005089894A (ja) * 2003-09-16 2005-04-07 Kawashima Textile Manuf Ltd 弱紫外線下消臭性布帛
WO2007032167A1 (fr) * 2005-09-16 2007-03-22 Murata Manufacturing Co., Ltd. Substrat multicouche céramique et procede de fabrication idoine
WO2010021089A1 (fr) * 2008-08-21 2010-02-25 パナソニック株式会社 Source de lumière pour éclairage
WO2011138169A1 (fr) * 2010-05-07 2011-11-10 Osram Gesellschaft mit beschränkter Haftung Composant semi-conducteur optoélectronique contenant un phosphate métallique exempt d'alcalins et exempt d'halogènes
WO2012133173A1 (fr) * 2011-03-28 2012-10-04 富士フイルム株式会社 Substrat réfléchissant pour élément électroluminescent et son procédé de fabrication

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