WO2013031987A1 - Substrat réfléchissant isolant et boîtier de del - Google Patents

Substrat réfléchissant isolant et boîtier de del Download PDF

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Publication number
WO2013031987A1
WO2013031987A1 PCT/JP2012/072252 JP2012072252W WO2013031987A1 WO 2013031987 A1 WO2013031987 A1 WO 2013031987A1 JP 2012072252 W JP2012072252 W JP 2012072252W WO 2013031987 A1 WO2013031987 A1 WO 2013031987A1
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substrate
insulating
layer
aluminum
porous layer
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PCT/JP2012/072252
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English (en)
Japanese (ja)
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堀田　吉則
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富士フイルム株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0274—Optical details, e.g. printed circuits comprising integral optical means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0116—Porous, e.g. foam
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2054—Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/049—Wire bonding

Definitions

  • the present invention relates to an insulating reflective substrate used for a light emitting element, and more particularly to an insulating reflective substrate that can be used for a light emitting diode (hereinafter referred to as “LED”).
  • LED light emitting diode
  • LEDs are said to have a power consumption of 1/100 and a lifespan of 40 times (40000 hours) compared to fluorescent lamps.
  • Such a feature of power saving and long life is an important factor in adopting LEDs in an environment-oriented flow.
  • white LEDs are excellent in color rendering properties and have a merit that a power supply circuit is simpler than fluorescent lamps, and therefore, expectations for light sources for illumination are increasing.
  • white LEDs (30 to 150 Lm / W) with high luminous efficiency, which are required as illumination light sources, have appeared one after another, and in terms of light use efficiency in practical use, the fluorescent lamps (20 to 110 Lm / W) have been reversed. is doing.
  • the flow of practical use of white LEDs instead of fluorescent lamps has increased rapidly, and the number of cases in which white LEDs are employed as backlights or illumination light sources for liquid crystal display devices is increasing.
  • Patent Document 1 discloses that “at least a light reflecting substrate having an insulating layer and a metal layer provided in contact with the insulating layer has a wavelength of more than 320 nm to 700 nm.
  • a light-reflecting substrate having a reflectance of 50% or more and a total reflectance of light having a wavelength of 300 nm to 320 nm of 60% or more is disclosed. Claim 12]).
  • an object of the present invention is to provide an LED package that is excellent in both insulation and diffuse reflectance and an insulating reflection substrate used therefor.
  • the present inventor has achieved both excellent insulation and diffuse reflectance by providing a porous layer having a specific porosity using a specific inorganic binder.
  • the present invention has been completed by finding out what can be done. That is, the present invention provides the following (1) to (6).
  • a metal substrate having an insulating layer on the surface A metal wiring layer provided on the insulating layer; A porous layer provided on a part of the insulating layer and a part of the metal wiring layer;
  • the metal substrate is a valve metal substrate,
  • the insulating layer is an anodized film of valve metal,
  • the porosity of the porous layer is 10% or more,
  • the porous layer contains inorganic particles having an average particle diameter of 0.1 ⁇ m or more and an inorganic binder,
  • An insulating reflective substrate wherein the inorganic binder is at least one selected from the group consisting of aluminum phosphate, sodium silicate, and aluminum chloride.
  • valve metal is at least one metal selected from the group consisting of aluminum, tantalum, niobium, titanium, hafnium, zirconium, zinc, tungsten, bismuth and antimony.
  • An LED package having the insulating reflective substrate according to any one of (1) to (5) and an LED light emitting element mounted on the surface of the insulating reflective substrate.
  • the LED package of this invention has a high diffuse reflectance, it can be used suitably for a fluorescent lamp alternative LED lamp, and is useful.
  • FIG. 1 is a schematic diagram showing an example of a preferred embodiment of an insulating reflective substrate according to the present invention.
  • FIG. 1 (A) is a top view and FIG. 1 (B) is an IB-IB in FIG. 1 (A). It is sectional drawing in a line.
  • FIG. 2 is a schematic drawing for explaining V-shaped processing in the manufacturing process of the insulating reflective substrate of the present invention, FIG. 2 (A) is a top view, and FIG. 2 (B) is FIG. 2 (A). It is sectional drawing in the IIB-IIB line.
  • FIG. 3 is a schematic view showing an example of a preferred embodiment of the LED package of the present invention, FIG. 3 (A) is a top view, and FIG. 3 (B) is a line IIIB-IIIB in FIG. 3 (A).
  • FIG. 3 is a schematic diagram showing an example of a preferred embodiment of an insulating reflective substrate according to the present invention.
  • FIG. 1 (A) is a top view and FIG
  • the insulating reflective substrate of the present invention includes a metal substrate having an insulating layer on the surface, a metal wiring layer provided on the insulating layer, a part on the insulating layer and a porous part provided on the metal wiring layer.
  • the metal substrate is a valve metal substrate
  • the insulating layer is an anodized film of the valve metal
  • the porosity of the porous layer is 10% or more
  • the porous layer is an average Insulation comprising inorganic particles having a particle diameter of 0.1 ⁇ m or more and an inorganic binder, wherein the inorganic binder is at least one selected from the group consisting of aluminum phosphate, sodium silicate and aluminum chloride. It is a reflective substrate.
  • FIG. 1 is a schematic top view and cross-sectional view showing an example of a preferred embodiment of an insulating reflective substrate of the present invention.
  • the insulating reflective substrate 10 of the present invention includes a metal substrate 1 having an insulating layer 2 on the surface, a metal wiring layer 3 provided on the insulating layer 2, a part on the insulating layer 2, and a metal. And a porous layer 7 provided on a part of the wiring layer 3.
  • the porous layer 7 contains inorganic particles 4, an inorganic binder 5, and microvoids 6.
  • the metal substrate used for the insulating reflective substrate of the present invention is a substrate made of a valve metal.
  • the valve metal has a characteristic that the metal surface is covered with an oxide film of the metal by anodic oxidation, and the oxide film flows only in one direction and flows very much in the reverse direction.
  • It is a metal having difficult characteristics, and specific examples thereof include aluminum, tantalum, niobium, titanium, hafnium, zirconium, zinc, tungsten, bismuth, antimony and the like.
  • it is an aluminum substrate because it has excellent reflectivity with respect to wavelengths in the ultraviolet to visible light region, which is the main wavelength of the LED light source used in LED packages, is excellent in workability and strength, and is easy to recycle. Is preferred.
  • the aluminum substrate suitably used for the insulating reflective substrate of the present invention a known aluminum substrate can be used.
  • an alloy plate containing aluminum as a main component and a trace amount of foreign elements; low-purity aluminum for example, a substrate in which high-purity aluminum is vapor-deposited on a recycled material); a substrate in which high-purity aluminum is coated on the surface of a silicon wafer, quartz, glass or the like by a method such as vapor deposition or sputtering;
  • the foreign elements that may be included in the alloy plate include silicon, iron, copper, manganese, magnesium, chromium, zinc, bismuth, nickel, titanium, etc., and the content of the foreign elements in the alloy is It is preferably 10% by mass or less.
  • Such an aluminum substrate is not particularly limited in terms of composition, preparation method (for example, casting method, etc.), and is described in paragraphs [0031] to [0051] of Patent Document 1 (International Publication No. 2010/150810).
  • the composition, preparation method, and the like can be appropriately employed.
  • the thickness of the metal substrate is not particularly limited and can be appropriately changed according to the user's wishes, etc.
  • the thickness of the aluminum substrate is about 0.1 to 2.0 mm.
  • the thickness is preferably 0.15 to 1.5 mm, and more preferably 0.2 to 1.0 mm.
  • the insulating layer used in the insulating reflective substrate of the present invention is a layer provided on the surface of the metal substrate (valve metal substrate), and is the above-described anodized film of the valve metal.
  • the insulating layer may be an anodized film of a valve metal substrate different from the valve metal substrate, but from the viewpoint of preventing formation defects of the insulating layer, a part (surface) of the valve metal substrate will be described later.
  • An anodized film formed on the valve metal substrate by performing an anodizing treatment is preferable.
  • the thickness of the insulating layer is preferably 1 to 200 ⁇ m, more preferably 20 to 150 ⁇ m, and more preferably 40 to 100 ⁇ m, because the insulating property of the LED package becomes better. Is more preferable.
  • the degree of ordering described in paragraphs [0035] to [0036] of Japanese Patent Application Laid-Open No. 2011-132586 and FIG. It is preferably 20% or more, more preferably 40% or more, and particularly preferably 70% or more.
  • the degree of ordering of the micropores is in the above range, the total reflection characteristics of the insulating reflective substrate of the present invention are improved.
  • substrate of this invention is a wiring layer for supplying electric power to the LED light emitting element which is provided on the said insulating layer and which the LED package of this invention mentioned later comprises.
  • the material of the metal wiring layer is not particularly limited as long as it is a material that conducts electricity (hereinafter also referred to as “metal material”). Specific examples thereof include gold (Au), silver (Ag), and copper (Cu ), Aluminum (Al), magnesium (Mg), nickel (Ni) and the like, and these may be used alone or in combination of two or more. Of these, Cu is preferably used because of its low electrical resistance.
  • the metal wiring layer may have a multilayer structure using these materials. For example, an embodiment in which an Ag layer, a Ni layer, and an Au layer are provided in this order from the bottom layer is preferable.
  • the thickness of the metal wiring layer may be a desired thickness depending on the purpose and application, but is preferably 0.5 to 100 ⁇ m, more preferably 5 to 60 ⁇ m from the viewpoint of conduction reliability and package compactness. 10 to 40 ⁇ m is particularly preferable.
  • the thickness of the lowermost layer is the thickness of the entire metal wiring layer in consideration of the surface shape (for example, fine irregularities) of the insulating layer. Is preferably 50% or more, more preferably 70 to 80%. Specifically, the thickness is preferably 10 to 50 ⁇ m, more preferably 15 to 40 ⁇ m.
  • the thickness of the uppermost layer is preferably 0.05 to 0.5 ⁇ m in consideration of wire bonding properties, More preferably, the thickness is ⁇ 0.4 ⁇ m.
  • the porous layer used in the insulating reflective substrate of the present invention is a light diffusing reflective layer provided on a part of the insulating layer and a part of the metal wiring layer.
  • the “part on the insulating layer” on which the porous layer is provided is particularly limited because it is affected by the mounting region of the LED light emitting element included in the metal wiring layer or the LED package of the present invention described later.
  • it is preferably about 40 to 90% of the surface of the insulating layer as shown in FIG.
  • the “part of the metal wiring layer” provided with the porous layer is not particularly limited because it is affected by the patterning or the like of the metal wiring layer, but as shown in FIG.
  • the porous layer contains inorganic particles having a specific particle size and a specific inorganic binder described later, and is an aggregate composed of a large number of inorganic particles partially bound to each other by the inorganic binder. It is a porous body having a specific porosity in which minute voids are formed between particles of a large number of inorganic particles.
  • both insulation and diffuse reflectance are improved. This is because, as shown in FIG. 1B, the surface of the porous layer has an uneven size of an appropriate size due to inorganic particles, and the internal voids contribute to the reflection / scattering of light. This is probably because of this.
  • the porosity of the porous layer is 10% or more, preferably 10 to 70%, more preferably 10 to 50%, and further preferably 20 to 40%. preferable.
  • the porosity refers to the total porosity measured by the geometric method.
  • the bulk density is calculated by the Archimedes method, and the true density is measured by the gas phase substitution method (Pycnometer method). The value obtained by substituting the obtained result into the following formula (1) is defined as the porosity.
  • Porosity (%) ⁇ 1 ⁇ (bulk density / true density) ⁇ ⁇ 100 (1)
  • the arithmetic average roughness Ra of the surface of the porous layer is preferably 0.5 to 3 ⁇ m from the viewpoint of suppressing regular reflection and further improving diffuse reflection. It is preferable that the thickness is 1.0 ⁇ m.
  • the arithmetic average roughness Ra is a surface property parameter described in JIS B0601: 2001.
  • a stylus type surface roughness meter for example, SURFCOM 480A, ACCRETECH (Tokyo Seimitsu) Co., Ltd.can be used.
  • the thickness of the porous layer is preferably 10 to 100 ⁇ m, and more preferably 30 to 80 ⁇ m, from the viewpoint of ensuring the presence of voids inside the porous layer.
  • the measuring method of the film thickness of the porous layer is as follows. First, a fracture surface produced by bending a substrate provided with a porous layer is observed and photographed with an ultra-high resolution scanning electron microscope (for example, S-4000, manufactured by Hitachi, Ltd.). Note that the observation magnification is appropriately adjusted depending on the film thickness and the like. Specifically, the magnification is preferably 100 to 10,000 times. Moreover, the observation range shall observe a part with a cross-sectional length of 100 ⁇ m or more. Subsequently, about the porous part of the image data (photograph) obtained by the said method, the film thickness of arbitrary 10 places within an observation range is measured, and let the average value be the film thickness of the said porous layer.
  • the average particle size of the inorganic particles contained in the porous layer is 0.1 ⁇ m or more, preferably 0.1 ⁇ m to 15 ⁇ m, more preferably 0.1 ⁇ m to 5 ⁇ m, and more preferably 0.5 to 2 ⁇ m. More preferably.
  • the average particle diameter of the inorganic particles is 0.1 ⁇ m or more, it is possible to ensure appropriate voids between the particles when binding with an inorganic binder described later.
  • the adhesiveness of the said porous layer and the said insulating layer becomes favorable in the average particle diameter of the said inorganic particle being 5 micrometers or less.
  • the average particle diameter means an average value of the particle diameters of the inorganic particles, and in the present invention, it means a 50% volume cumulative diameter (D50) measured using a laser diffraction particle size distribution measuring device.
  • the inorganic particles preferably have a small difference between the 10% volume cumulative diameter (D10) and the 90% volume cumulative diameter (D90) and have a uniform particle size distribution.
  • the inorganic particles are not particularly limited.
  • conventionally known metal oxides, metal hydroxides, carbonates, sulfates, and the like can be used, and among these, metal oxides are preferably used.
  • Specific examples of the inorganic particles include metal oxides such as aluminum oxide (alumina), magnesium oxide, yttrium oxide, titanium oxide, zinc oxide, silicon dioxide, and zirconium oxide; aluminum hydroxide, calcium hydroxide, Hydroxides such as magnesium hydroxide; calcium carbonate (light calcium carbonate, heavy calcium carbonate, ultrafine calcium carbonate, etc.), carbonates such as barium carbonate, magnesium carbonate, strontium carbonate; sulfates such as calcium sulfate and barium sulfate Other examples include calcium carbonate, calcite, marble, gypsum, kaolin clay, calcined clay, talc, sericite, optical glass, glass beads, and the like.
  • aluminum oxide, silicon dioxide, and aluminum hydroxide are preferable, and aluminum oxide and aluminum hydro
  • the inorganic particles may be used in combination of two or more kinds of particles or two or more kinds of particles having an average particle diameter.
  • the average particle diameter of the inorganic particles is the main component (50 The average particle diameter of inorganic particles (greater than% by mass).
  • the shape of the inorganic particles is not particularly limited.
  • the shape is spherical, polyhedral (for example, icosahedron, dodecahedron, etc.), cubic, tetrahedral, or uneven on the surface. It may be any shape having a plurality of convex protrusions (hereinafter also referred to as “compete shape”), a plate shape, a needle shape, or the like.
  • compete shape a plurality of convex protrusions
  • spherical, polyhedral, cubic, tetrahedral, and complex shapes are preferred for the reason of excellent heat insulation, and spherical is more preferred for reasons of easy availability and excellent heat insulation.
  • inorganic particles having a refractive index of 1.5 to 1.8 from the viewpoint of regular reflectance of the LED package.
  • inorganic particles satisfying the refractive index include aluminum oxide (alumina), magnesium oxide, aluminum hydroxide, calcium hydroxide, magnesium hydroxide, calcium carbonate, barium carbonate, magnesium carbonate, strontium carbonate, calcium sulfate, and barium sulfate.
  • the inorganic binder contained in the porous layer is at least one selected from the group consisting of aluminum phosphate, sodium silicate and aluminum chloride (hereinafter referred to as “aluminum phosphate etc.” in this paragraph). is there.
  • aluminum phosphate etc.” aluminum chloride
  • sintering is performed in order to bind inorganic particles.
  • a porous layer having a predetermined porosity can be formed without sintering by using aluminum phosphate or the like as an inorganic binder.
  • the formed porous layer is resistant to secular change, and furthermore, since the inorganic binder reacts with the insulating layer at the time of formation, the adhesion with the insulating layer is also improved.
  • aluminum phosphate or the like behaves like glue in the initial stage of binding, and has a stronger ability to hold voids between inorganic particles than the organic binder (epoxy resin) used in Comparative Examples described later. This is probably because of this.
  • aluminum phosphate examples include not only aluminum phosphate in a narrow sense but also aluminum metaphosphate, aluminum orthophosphate, and aluminum polyphosphate in addition to aluminum phosphate.
  • the aluminum phosphate can be obtained by reacting commercially available phosphoric acid and commercially available aluminum sulfate (or aluminum hydroxide, aluminum chloride, and a mixture thereof) in the presence of water.
  • aluminum chloride since aluminum chloride is considered to have a role of causing the reaction of aluminum hydroxide to proceed catalytically, it is preferable to add both aluminum hydroxide and aluminum chloride in the above reaction, and the amount of aluminum chloride is water. It is preferably 5 to 10% with respect to the amount of aluminum oxide.
  • a sodium hydroxide solution can be used, and aluminum sulfate may be produced by reacting sulfuric acid and alumina.
  • a phosphate compound may be used together with the aluminum phosphate.
  • the phosphate compound is not particularly limited as long as it is insoluble in water. Specific examples thereof include magnesium phosphate, calcium phosphate, zinc phosphate, barium phosphate, aluminum phosphate, gallium phosphate, and lanthanum phosphate. , Titanium phosphate, zirconium phosphate and the like.
  • sodium silicate The above-mentioned sodium silicate is also called sodium silicate or water glass, and Na 2 SiO 3, which is a sodium salt of metasilicate, is commonly used. In addition, Na 4 SiO 4 , Na 2 Si 2 O 5 , Na 2 Si 4 O 9 or the like can also be used.
  • the sodium salt of metasilicic acid can be obtained by melting silicon dioxide with sodium carbonate or sodium hydroxide.
  • the aluminum chloride may be any of anhydrous aluminum chloride, aluminum chloride hexahydrate, and polyaluminum chloride (a polymer of basic aluminum chloride formed by dissolving aluminum hydroxide in hydrochloric acid).
  • the porous layer may contain other compounds.
  • other compounds include dispersants, reaction accelerators, and the like, and reaction products of these with the inorganic particles and the inorganic binder.
  • substrate of this invention (henceforth "only the manufacturing method of this invention") is demonstrated in detail.
  • the production method of the present invention is not particularly limited.
  • the manufacturing method of the present invention has various processing steps such as through-hole processing, routing processing, and V-shape processing as desired from the viewpoint of the assembly process, mounting method, and apparatus of the LED package using the insulating reflective substrate. It may be. Next, each processing step described above which the manufacturing method of the present invention has will be described.
  • the anodizing treatment step is a step of anodizing the metal substrate to form the insulating layer as an anodized film.
  • the anodizing treatment is not particularly limited, and can be performed by a conventionally performed method.
  • Specific examples of the solution used for the anodizing treatment include sulfuric acid, phosphoric acid, chromic acid, oxalic acid, sulfamic acid, benzenesulfonic acid, amidosulfonic acid, malonic acid, citric acid, tartaric acid, and boric acid.
  • Etc. can be used alone or in combination of two or more.
  • the conditions for the anodizing treatment vary depending on the electrolyte used, and thus cannot be determined unconditionally.
  • the electrolyte concentration is 1 to 80% by mass
  • the solution temperature is 5 to 70 ° C.
  • the current density It is appropriate that 0.5 to 60 A / dm 2 , voltage 1 to 100 V, electrolysis time 15 seconds to 50 minutes, and the anodic oxide film layer amount is adjusted to a desired amount.
  • a direct current may be applied between the metal substrate and the counter electrode, or an alternating current may be applied.
  • the current density is preferably 1 to 60 A / dm 2 , and more preferably 5 to 40 A / dm 2 .
  • a current of 5 to 10 A / dm 2 is low at the beginning of the anodizing treatment so that current is concentrated on a part of the metal substrate and so-called “burning” does not occur.
  • the anodic oxidation process it is preferable to perform the liquid feeding method in which the metal substrate is fed via an electrolytic solution.
  • Patent Document 1 International Publication No. 2010/150810
  • the wiring formation step is a step of forming the metal wiring layer on the insulating layer.
  • a method for forming the metal wiring layer for example, a metal ink containing the above-described metal material and a liquid component (for example, a solvent, a resin component, etc.) is pattern printed on the insulating layer by an ink jet printing method, a screen printing method, And the like.
  • a wiring layer having a pattern can be easily formed on the surface of the insulating layer without requiring many steps.
  • metal wiring layer formation methods include, for example, various plating processes such as electrolytic plating, electroless plating, and displacement plating, sputtering, vapor deposition, vacuum pasting of metal foil, and adhesion. Examples thereof include an adhesion treatment with a layer.
  • the porous layer forming step is a step of forming the porous layer on a part of each layer of the insulating layer and the metal wiring layer, for example, a step of performing a coating film forming process and a drying process described later. Is preferred.
  • the coating film forming treatment is a group consisting of inorganic particles having an average particle diameter of 0.1 ⁇ m or more, aluminum phosphate, sodium silicate, and aluminum chloride at predetermined positions on each of the insulating layer and the metal wiring layer.
  • the coating solution is not particularly limited as long as it is a solution containing the inorganic particles and the inorganic binder, but is preferably a slurry containing the inorganic particles and the inorganic binder. Further, the content of the inorganic binder in the coating solution is preferably 5 to 50 parts by mass with respect to 100 parts by mass of the inorganic particles.
  • the coating solution when the aluminum phosphate is used as the inorganic binder, the coating solution uses a mixed solution containing phosphoric acid, aluminum hydroxide and water, and in this mixed solution, phosphoric acid and A reaction solution in which aluminum phosphate is produced by reacting aluminum hydroxide in a liquid can be used.
  • the formation of aluminum phosphate can be easily confirmed by analyzing the surface of the porous layer formed with an infrared spectrophotometer.
  • the coating solution uses a mixed solution containing hydrochloric acid, aluminum hydroxide and water, and hydrochloric acid and aluminum hydroxide are mixed in the mixed solution.
  • reaction solution in which aluminum chloride is produced by reacting in the reaction.
  • the formation of aluminum chloride can be easily confirmed by analyzing the surface of the porous layer formed with an infrared spectrophotometer.
  • the viscosity of the liquid rapidly increases as the reaction proceeds. Therefore, it is desirable to add a little excess water in advance.
  • the presence of phosphate radicals or hydrochloric acid radicals in the microvoids of the porous layer that is formed causes corrosion of the substrate, and therefore it is possible to add aluminum hydroxide slightly in excess of the stoichiometric ratio. desirable.
  • the coating method of the coating solution is not particularly limited, and various methods can be used. For example, bar coater coating, spin coating, spray coating, curtain coating, dip coating, air knife coating, blade coating, roll coating, etc. Can be mentioned.
  • the said drying process is a process of forming the said porous layer whose porosity is 10% or more by drying the said coating film formed by the said coating-film shape process.
  • the drying conditions of the coating film are not particularly limited, and a generally used method can be selected. However, firing (heat drying) is preferable in order to promote a reaction in which inorganic particles are bound by aluminum phosphate.
  • the drying temperature is preferably from 100 to 300 ° C, more preferably from 150 to 280 ° C, and even more preferably from 200 to 250 ° C. From the viewpoint of removing moisture, 100 ° C. or higher is preferable, and 150 ° C.
  • an aluminum substrate is used as the metal substrate, it is preferably 300 ° C. or less from the viewpoint of suppressing softening, and more preferably 250 ° C. or less from the viewpoint of a change in strength of the aluminum substrate in a long-time heat treatment. It is desirable to process with.
  • the drying time is preferably 10 to 60 minutes, more preferably 20 to 40 minutes. In a short time, the progress of the reaction is insufficient, and when the time is long, the strength of the aluminum substrate may change due to the drying temperature.
  • the coating solution is a liquid containing moisture, and therefore, before baking, the aluminum phosphate is dried at a temperature of 100 ° C. or less at which no formation reaction or binding reaction occurs. Also good.
  • the processing step is a step performed as desired from the viewpoint of the assembly process, mounting method, and apparatus of the LED package using the insulating reflective substrate.
  • through-hole processing, routing processing, V-shaped processing Etc are performed before the anodizing step; between the anodizing step, the wiring forming step and the porous layer forming step; and after the porous layer forming step. Can do.
  • the through hole processing is not particularly limited.
  • the processing methods described in paragraphs [0084], [0085], [0087], and [0144] of Patent Document 1 International Publication No. 2010/150810) are used. It can be adopted as appropriate.
  • the routing processing is not particularly limited.
  • the processing methods described in paragraphs [0084], [0086] and [0087] and [FIG. 11] of Patent Document 1 International Publication No. 2010/150810) are used. It can be adopted as appropriate.
  • the V-shaped process is a process for making a cut (notch) 9 using a dicer 8 or the like so as not to cut in the thickness direction of the substrate.
  • the LED package of the present invention is an LED package having the above-described reflective substrate of the present invention and an LED light emitting element mounted on the surface thereof. Next, the configuration of the LED package of the present invention will be described with reference to FIG.
  • the LED package 20 includes the LED 11 mounted on the surface (insulating layer 2) of the insulating reflective substrate 10.
  • the LED 11 is molded with a transparent resin mixed with fluorescent particles (not shown), and is wire-bonded to the insulating reflective substrate 10 of the present invention having the metal wiring layer 3 that also serves as an electrode for external connection.
  • the LED light-emitting element is formed by forming a semiconductor such as GaAlN, ZnS, ZnSe, SiC, GaP, GaAlAs, AlN, InN, AlInGaP, InGaN, GaN, or AlInGaN on the substrate as a light-emitting layer. It is done.
  • the semiconductor structure include a homostructure, a heterostructure, or a double heterostructure having a MIS junction, a PIN junction, or a PN junction.
  • Various emission wavelengths can be selected from ultraviolet light to infrared light depending on the material of the semiconductor layer and the degree of mixed crystal.
  • the material of the transparent resin is preferably a thermosetting resin.
  • the thermosetting resin is preferably formed of at least one selected from the group consisting of epoxy resins, modified epoxy resins, silicone resins, modified silicone resins, acrylate resins, urethane resins, and polyimide resins. , Modified epoxy resin, silicone resin, and modified silicone resin are preferable.
  • the transparent resin is preferably hard to protect the blue LED. Moreover, it is preferable to use resin excellent in heat resistance, a weather resistance, and light resistance for transparent resin.
  • the transparent resin may be mixed with at least one selected from the group consisting of a filler, a diffusing agent, a pigment, a fluorescent material, a reflective material, an ultraviolet absorber, and an antioxidant so as to have a predetermined function. it can.
  • the said fluorescent particle should just absorb the light from blue LED and wavelength-convert it into the light of a different wavelength.
  • Specific examples of the fluorescent particles include nitride-based phosphors, oxynitride-based phosphors, sialon-based phosphors, and ⁇ -sialon-based phosphors that are mainly activated by lanthanoid elements such as Eu and Ce.
  • the LED package of the present invention can also be used as a phosphor-mixed white LED package using an ultraviolet to blue LED and a fluorescent light emitter that absorbs the LED and emits fluorescence in the visible light region.
  • These fluorescent light emitters absorb blue light from the blue LED to generate fluorescence (yellowish fluorescent light), and white light is emitted from the light emitting element by the fluorescent light and the afterglow of the blue LED.
  • the above-described method is a so-called “pseudo white light emission type” in which a blue LED light source chip and one kind of yellow phosphor are combined.
  • an ultraviolet to near ultraviolet LED light source chip and a red / green / blue fluorescence for example, an ultraviolet to near ultraviolet LED light source chip and a red / green / blue fluorescence.
  • the LED of the present invention as a light-emitting unit using a known light-emitting method such as “ultraviolet to near-ultraviolet light source type” in which several kinds of bodies are combined and “RGB light source type” that emits white light with three red / green / blue light sources Package can be used.
  • a known light-emitting method such as “ultraviolet to near-ultraviolet light source type” in which several kinds of bodies are combined and “RGB light source type” that emits white light with three red / green / blue light sources Package can be used.
  • the method of mounting the LED light emitting element on the reflective substrate of the present invention involves mounting by heating, but the thermocompression bonding including solder reflow and the mounting method by flip chip provide uniform and reliable mounting.
  • the maximum reached temperature is preferably 220 to 350 ° C, more preferably 240 to 320 ° C, and particularly preferably 260 to 300 ° C.
  • the time for maintaining these maximum temperatures is preferably 2 seconds to 10 minutes, more preferably 5 seconds to 5 minutes, and particularly preferably 10 seconds to 3 minutes.
  • the temperature at the time of mounting by wire bonding is preferably 80 to 300 ° C., more preferably 90 to 250 ° C., and particularly preferably 100 to 200 ° C. from the viewpoint of reliable mounting.
  • the heating time is preferably 2 seconds to 10 minutes, more preferably 5 seconds to 5 minutes, and particularly preferably 10 seconds to 3 minutes.
  • Example 1 (Preparation of a metal substrate having an insulating layer) An aluminum plate (1050 material, thickness 0.8 mm, manufactured by Nippon Light Metal Co., Ltd.) was sprayed with an aqueous solution having a sodium hydroxide concentration of 27 mass% and an aluminum ion concentration of 6.5 mass% at a temperature of 70 ° C. Sprayed for 20 seconds. Thereafter, the liquid was drained with a nip roller, and further, a water washing treatment described later was performed, and then the liquid was drained with a nip roller.
  • the water washing treatment was carried out using an apparatus for washing with a free-falling curtain-like liquid film, and further washed with water for 5 seconds using a spray tube having a structure having spray tips with fan-shaped spreading at 80 mm intervals. .
  • desmut treatment was performed.
  • the acidic aqueous solution used for the desmut treatment was a 1% sulfuric acid aqueous solution, which was sprayed from a spray tube at a liquid temperature of 35 ° C. for 5 seconds. Then, the liquid was drained with a nip roller. Next, the substrate after these treatments was used as an anode, and anodization treatment was performed using an anodizing apparatus.
  • an electrolytic solution (temperature 20 ° C.) in which aluminum sulfate was dissolved in a 70 g / L sulfuric acid aqueous solution and the aluminum ion concentration was 5 g / L was used.
  • the anodizing treatment is performed under constant voltage electrolysis conditions so that the voltage during the anodic reaction of the substrate is 25 V, and is applied until the final anodic oxide film thickness is 60 ⁇ m to insulate the anodized aluminum film.
  • An aluminum substrate (hereinafter also referred to as “anodized aluminum substrate”) having a surface as a layer was manufactured. Thereafter, the liquid was drained by a nip roller, and further, the water was washed using a spray tube having the same structure as that used in the water washing process, and then the liquid was drained by a nip roller.
  • a Cu layer was formed on the produced anodized aluminum substrate using a sputtering apparatus. Specifically, a Cu layer having a thickness of 0.7 ⁇ m was formed by performing sputtering for 25 minutes under the condition of 1.2 Pa. Next, using this Cu layer as a cathode, Cu was further thickened by electrolytic plating in a copper sulfate solution. Specifically, a copper sulfate solution with a Cu concentration adjusted to 100 g / L was used, and the treatment was performed at 40 ° C. under a current density of 1 A / dm 2, and the film thickness was adjusted to 20 ⁇ m.
  • a film resist (Photec, manufactured by Hitachi Chemical Co., Ltd.) is bonded, exposed to form the pattern of the metal wiring layer 3 shown in FIG. Exposed. Then, only the exposed Cu portion was dissolved and removed by immersing in ammonia water (liquid temperature: 50 ° C.) prepared to a composition of ammonia concentration 5% and ammonium chloride 226 g / L. In addition, in order to reduce the damage to the anodic oxide film, the dissolution treatment with aqueous ammonia was performed so as not to leave the exposed Cu portion by repeating the immersion for 2 minutes and washing with water about 5 times.
  • a porous layer forming solution was prepared by adding 100 g of AL-160SG-3 (average particle size: 0.52 ⁇ m, Showa Denko) as inorganic particles to 100 g of binder liquid A having the following composition and stirring. .
  • An insulating reflective substrate in which a porous layer is formed on a substrate by applying the prepared porous layer forming solution onto a substrate on which a metal wiring layer is formed to form a coating film, and then drying at 180 ° C. for 5 minutes. was made.
  • the presence of aluminum phosphate (inorganic binder) in the porous layer was confirmed by infrared spectroscopy (IR).
  • IR infrared spectroscopy
  • Example 2 An insulating reflective substrate was produced in the same manner as in Example 1 except that the inorganic particles used in the porous layer forming solution were replaced with AS-40 (average particle size: 12 ⁇ m, Showa Denko).
  • Example 3 Insulating reflection was carried out in the same manner as in Example 1 except that the inorganic particles used in the porous layer forming solution were replaced with AS-40 (average particle size: 12 ⁇ m, Showa Denko KK) and the blending amount was changed to 200 g. A substrate was produced.
  • Example 4 An insulating reflective substrate was produced in the same manner as in Example 1 except that the amount of water added was changed to 20 g during the composition of the binder liquid A.
  • Example 5> (Preparation of a metal substrate having an insulating layer) A 0.5 mm thick titanium plate (manufactured by Soekawa Rikagaku Co., Ltd.) was used as the anode, and anodization was performed using an anodizing apparatus. Here, a titanium plate previously degreased with trichlorethylene was used. In the anodic oxidation treatment, an aqueous solution for mixing 25 g / L phosphoric acid, 35 g / L sulfuric acid, 10 g / L hydrogen peroxide water was used as an electrolyte (temperature: 20 ° C.), and the substrate was 3 A / dm 2.
  • anodized titanium substrate having a titanium anodized film as an insulating layer on the surface was produced.
  • a diluted metal nanoparticle ink (XA-436, manufactured by Fujikura Chemical Co., Ltd.) diluted with an ink jet apparatus (DMP-2831, manufactured by Fuji Film Co., Ltd.) on the surface of the produced anodized titanium substrate is shown in FIG.
  • the Ag wiring (wiring width: 100 ⁇ m) was formed by droplet ejection in the pattern.
  • a porous layer was formed by the same method as in Example 1 to produce an insulating reflective substrate having a porous layer formed on the substrate.
  • Example 6 An insulating reflective substrate was produced in the same manner as in Example 1 except that the metal wiring layer was replaced by the following forming method.
  • a diluted metal nanoparticle ink (XA-436, manufactured by Fujikura Chemical Co., Ltd.) is applied to the surface of the produced anodized aluminum substrate using an ink jet apparatus (DMP-2831, manufactured by Fuji Film Co., Ltd.) as shown in FIG.
  • the Ag wiring (wiring width: 100 ⁇ m) was formed by droplet ejection in the pattern.
  • Example 7 An insulating reflective substrate was produced in the same manner as in Example 1 except that the inorganic particles used in the porous layer forming solution were replaced with aluminum hydroxide (BF013, average particle size: 1.2 ⁇ m, manufactured by Nippon Light Metal Co., Ltd.). .
  • aluminum hydroxide BF013, average particle size: 1.2 ⁇ m, manufactured by Nippon Light Metal Co., Ltd.
  • No. 3 sodium silicate stock solution (specific gravity 1.4) manufactured by Toyama Chemical Co., Ltd. and water were mixed at 100 g of binder liquid B, and AL-160SG-3 (average particle diameter:
  • a porous layer forming solution was prepared by adding 100 g of 0.52 ⁇ m (manufactured by Showa Denko KK) and stirring.
  • An insulating reflective substrate in which a porous layer is formed on a substrate by applying the prepared porous layer forming solution onto a substrate on which a metal wiring layer is formed to form a coating film, and then drying at 180 ° C. for 5 minutes. was made.
  • the presence of aluminum silicate (inorganic binder) in the porous layer was confirmed by infrared spectroscopy (IR).
  • Example 9 An insulating reflective substrate was produced in the same manner as in Example 1 except that the porous layer was replaced by the following forming method.
  • a porous layer forming solution was prepared by adding 100 g of AL-160SG-3 (average particle size: 0.52 ⁇ m, manufactured by Showa Denko) as inorganic particles to 100 g of binder liquid C having the following composition and stirring. .
  • An insulating reflective substrate in which a porous layer is formed on a substrate by applying the prepared porous layer forming solution onto a substrate on which a metal wiring layer is formed to form a coating film, and then drying at 180 ° C. for 5 minutes. was made.
  • Formation of porous layer By adding 100 g of AL-160SG-3 (average particle size: 0.52 ⁇ m, Showa Denko) as inorganic particles to 10 g of low-viscosity epoxy resin (Z-1, manufactured by Nisshin Range), and stirring, A porous layer forming composition was prepared. Insulating reflection in which a porous layer was formed on a substrate by applying the prepared porous layer forming composition on a substrate on which a metal wiring layer was formed to form a coating film, followed by drying at 180 ° C. for 5 minutes. A substrate was produced.
  • ⁇ Comparative Example 3> An insulating reflective substrate was produced in the same manner as in Example 1 except that the porous layer was replaced by the following forming method.
  • (Formation of porous layer) 41 g of alumina sol 520 (average particle size: 20 nm, solid content concentration: 20%, manufactured by Nissan Chemical Co., Ltd.), 48 g of phosphoric acid 85% (manufactured by Wako Pure Chemical Industries), 11 g of aluminum hydroxide (manufactured by Wako Pure Chemical Industries, Ltd.)
  • a porous layer forming solution was prepared.
  • An insulating reflective substrate in which a porous layer is formed on a substrate by applying the prepared porous layer forming solution onto a substrate on which a metal wiring layer is formed to form a coating film, and then drying at 180 ° C. for 5 minutes. was made.
  • the presence of aluminum phosphate (inorganic binder) in the porous layer was confirmed by infrared spectroscopy (IR).
  • the porosity of the porous layer of each of the insulating reflective substrates thus produced was calculated by calculating the bulk density by the Archimedes method, measuring the true density by the gas phase substitution method (Pycnometer method), and obtaining the result in the above formula (1).
  • the substituted value was calculated.
  • Table 1 arithmetic mean roughness Ra described in JIS B0601: 2001 was measured about the surface of the porous layer. Specifically, Ra was measured using a stylus-type surface roughness meter (SURFCOM 480A, manufactured by ACPRETECH (Tokyo Seimitsu)). The results are shown in Table 1 below.
  • a blue LED light emitting element was mounted on the surface of each of the produced insulating reflective substrates by wire bonding, and connected to the blue LED light emitting element.
  • a pseudo white LED package was produced by providing a sealing material containing a yellow phosphor on the surface.
  • Luminous efficiency (1 m / W) light flux (lm) / (current (A) ⁇ 10 (V))
  • the insulating reflective substrate produced in Comparative Example 4 having no porous layer is excellent in insulation and sufficiently high in regular reflectance, but slightly inferior in diffuse reflectance. As a result, it was found that the luminous efficiency was slightly lowered.
  • the insulating reflective substrate produced in Comparative Example 2 having a porous layer prepared without using a predetermined inorganic binder improves the diffuse reflectance as compared with Comparative Example 4, but it exhibits an epoxy property due to long-term lighting. It was found that the resin layer deteriorates and the luminous efficiency with time decreases.
  • the insulating reflection substrate produced in Comparative Example 1 having a small porosity and Comparative Example 3 having a small inorganic particle has a diffuse reflectance higher than that of Comparative Example 4. Although it improved a little, it turned out that it is inadequate.
  • the insulating reflective substrates produced in Examples 1 to 9 having a porous layer prepared using a predetermined inorganic binder are excellent in both insulating properties and diffuse reflectance, and the initial and time-lapsed substrates are excellent. It was found that the luminous efficiency was also high. In particular, it can be seen from the comparison between Example 5 and Example 6 that Example 6 using an aluminum substrate as the metal substrate and an anodic oxide film of aluminum as the insulating layer provides better insulation. It was. In addition, from the comparison with Examples 1 to 4, it was found that Examples 1 and 4 using inorganic particles having an average particle diameter in the range of 0.1 to 5 ⁇ m had higher luminous efficiency over time.

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention a pour objet de réaliser un boîtier de DEL présentant d'excellentes propriétés d'isolation et de réflectance diffuse, ainsi qu'un substrat réfléchissant isolant utilisé dans celui-ci. Le substrat réfléchissant isolant selon la présente invention comprend un substrat métallique doté d'une couche isolante sur sa surface, d'une couche de câblage métallique placée sur la couche isolante et d'une couche poreuse placée sur une partie de la couche isolante et une partie de la couche de câblage métallique. Le substrat métallique est un substrat métallique de valve, la couche isolante est un film d'oxyde anodique du métal de valve, la porosité de la couche poreuse est supérieure ou égale à 10%, la couche poreuse contient des particules inorganiques d'une taille moyenne de particules supérieure ou égale à 0,1 μm ainsi qu'un liant inorganique d'au moins un type choisi dans le groupe constitué du phosphate d'aluminium, du silicate de sodium et du chlorure d'aluminium.
PCT/JP2012/072252 2011-09-01 2012-08-31 Substrat réfléchissant isolant et boîtier de del WO2013031987A1 (fr)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016072525A (ja) * 2014-09-30 2016-05-09 日亜化学工業株式会社 発光装置およびその製造方法
US10014457B2 (en) 2015-12-25 2018-07-03 Nichia Corporation Light emitting device
US10676446B2 (en) 2015-04-10 2020-06-09 Hoffmann-La Roche Inc. Bicyclic quinazolinone derivatives

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JP2006221173A (ja) * 2005-02-09 2006-08-24 Saint-Gobain Glass France Ｕｖ吸収特性を有する拡散構造体
WO2006104061A1 (fr) * 2005-03-29 2006-10-05 Kyocera Corporation Element reflechissant, dispositif emettant de la lumiere utilisant cet element et dispositif d’eclairage
JP2010151120A (ja) * 2008-11-27 2010-07-08 Toshiba Corp 蒸気機器
JP2011132586A (ja) * 2009-12-25 2011-07-07 Fujifilm Corp 絶縁基板および発光素子

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Publication number Priority date Publication date Assignee Title
JP2006221173A (ja) * 2005-02-09 2006-08-24 Saint-Gobain Glass France Ｕｖ吸収特性を有する拡散構造体
WO2006104061A1 (fr) * 2005-03-29 2006-10-05 Kyocera Corporation Element reflechissant, dispositif emettant de la lumiere utilisant cet element et dispositif d’eclairage
JP2010151120A (ja) * 2008-11-27 2010-07-08 Toshiba Corp 蒸気機器
JP2011132586A (ja) * 2009-12-25 2011-07-07 Fujifilm Corp 絶縁基板および発光素子

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016072525A (ja) * 2014-09-30 2016-05-09 日亜化学工業株式会社 発光装置およびその製造方法
US10676446B2 (en) 2015-04-10 2020-06-09 Hoffmann-La Roche Inc. Bicyclic quinazolinone derivatives
US10014457B2 (en) 2015-12-25 2018-07-03 Nichia Corporation Light emitting device

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