WO2014097544A1 - Dispositif de transport de substrat - Google Patents

Dispositif de transport de substrat Download PDF

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Publication number
WO2014097544A1
WO2014097544A1 PCT/JP2013/006902 JP2013006902W WO2014097544A1 WO 2014097544 A1 WO2014097544 A1 WO 2014097544A1 JP 2013006902 W JP2013006902 W JP 2013006902W WO 2014097544 A1 WO2014097544 A1 WO 2014097544A1
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WO
WIPO (PCT)
Prior art keywords
base material
outer peripheral
peripheral surface
diameter portion
small diameter
Prior art date
Application number
PCT/JP2013/006902
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English (en)
Japanese (ja)
Inventor
尚樹 大庭
玉垣　浩
Original Assignee
株式会社神戸製鋼所
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Filing date
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Application filed by 株式会社神戸製鋼所 filed Critical 株式会社神戸製鋼所
Publication of WO2014097544A1 publication Critical patent/WO2014097544A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Definitions

  • the present invention relates to a base material transport apparatus that is provided in a film forming apparatus that performs a film forming process on the surface of a base material and has a base material transport roller such as a film forming roller.
  • Examples of equipment that adopts the roll-to-roll method include a film forming apparatus that forms a film by a film forming process using a sputtering method, a plasma CVD method, or the like, or a coating apparatus that applies a coating to the surface of a base material. Etc.
  • These apparatuses include a member having a relatively large diameter and a substantially columnar shape called a substrate conveying roller.
  • a film forming process or a coating process is performed on a substrate wound around the substrate conveying roller, and the substrate wound around the substrate conveying roller is rotated. Is transported.
  • conveyance rollers used for various purposes such as a guide roller for changing the conveyance direction of the base material and a tension detection roller are known.
  • the apparatus described in Patent Document 1 includes means for sending a web to be coated with a coating to a coating deposition station, means for supporting the web at the coating deposition station, and coating the web at the coating deposition station. And means for driving gas in a region between the web and the support means.
  • the vacuum processing apparatus described in Patent Document 2 includes a cooling roller.
  • the cooling roller includes a rotating body, a pair of lid-like members, a rotation center axis of the rotating body, and a cooling cylinder.
  • the rotating body has a hollow cylindrical shape and rotates in the outer circumferential direction.
  • the lid-like member is attached to the rotating body so as to block the openings at both ends in the longitudinal direction of the rotating body.
  • the rotation center axis passes through the lid-like member.
  • the cooling cylinder is disposed in a hollow portion of the rotating body and maintains a non-contact state with the rotating body.
  • the first refrigerant is introduced into the cooling cylinder, and the second refrigerant is introduced into a space sandwiched between the inner peripheral surface of the rotating body and the outer peripheral surface of the cooling cylinder.
  • the devices described in Patent Document 1 and Patent Document 2 described above each include means for cooling the base material for the purpose of releasing heat input to the base material by the film forming process and the coating process.
  • the purpose of the cooling of these base materials is to prevent wrinkles and breaks that occur when the base material having a raised temperature is wound around the base material transport roller, and to maintain the quality of the film to be formed.
  • the driving means cools the base material by injecting one jet or a plurality of spaced jets into a region between the web (base material) and the supporting means. It has. According to this, it is possible to increase productivity by increasing the heat transfer efficiency between the web and the support means.
  • the injected gas is expected to leak into the process zone from both ends of the web after passing through a narrow gap between the web and the support means. This can be a problem in processes where a small amount of gas greatly affects the film quality, such as a sputtered ITO film.
  • the base material is cooled by a cooling roller into which the first refrigerant and the second refrigerant are introduced.
  • the present technology can be widely applied not only as a film formation zone but also as a guide roller.
  • a substrate conveying roller having a two-stage shape is known. This shape is for avoiding as much as possible that the outer peripheral surface of the said base material conveyance roller contacts the coating surface or film-forming surface of a base material, and is the longitudinal direction (width direction of a base material) of the said base material conveyance roller.
  • a difference is provided between the diameters of both end portions and the central portion. Specifically, a diameter smaller than the diameters of both end portions is given to the central portion.
  • the two-stage substrate transport roller is applied to an apparatus that performs a film forming process and a coating process under vacuum like the vacuum processing apparatus described in Patent Document 2, the substrate and the substrate transport In the area where the roller does not contact, heat can be exchanged between the base material and the base material transport roller only by radiant heat transfer. This makes it difficult to release the heat input to the substrate due to the film formation process and the coating process, and causes a wrinkle or breakage when the heated substrate is wound around the substrate transport roller. This will cause denaturation.
  • the present invention has been made in view of the above problems, and is a base material transport device including a base material transport roller, while avoiding contact between the central portion of the base material transport roller and the base material. It aims at providing what can improve the heat-transfer efficiency in a non-contact location.
  • the present invention provides a substrate transport device provided in a film forming apparatus that performs a film forming process on the surface of the substrate.
  • the apparatus includes a base material transport roller for transporting the base material, and a gas introduction mechanism for introducing gas between the base material transport roller and the base material.
  • the base material transport roller is a portion constituting a central portion in the axial direction along the axis of the base material transport roller, and a central small diameter portion having a first outer peripheral surface, and an axis of the central small diameter portion Each of which has a second outer peripheral surface and a third outer peripheral surface which are respectively located on both outer sides in the direction and come into contact with the base material, and transports the base material by rotating around the axis of the base material transport roller.
  • the second outer peripheral surface and the third outer peripheral surface are configured to prevent the base material that contacts the second and third outer peripheral surfaces from contacting the first outer peripheral surface.
  • the diameter is larger than the diameter.
  • the gas introduction mechanism has a gas introduction flow path for introducing gas into a space formed between the base material and the first outer peripheral surface of the central small diameter portion.
  • FIG. 4A is a perspective view of a substrate transport apparatus provided in a film forming apparatus according to a third embodiment, and FIG.
  • FIG. 4B is a cross-sectional view taken along line IVB-IVB in FIG.
  • A) is a cross-sectional side view of the substrate transport apparatus provided in the film forming apparatus according to the fourth embodiment
  • (b) is a cross-sectional view taken along the line VB-VB in FIG. 5 (a).
  • FIG. 1 is a sectional front view of the film forming apparatus 1 according to the present embodiment.
  • FIG. 2 is a cross-sectional side view showing the base material transport device 2 a provided in the film forming apparatus 1.
  • the film forming apparatus 1 includes an unwinding unit 3, a film base material transport unit, and a winding unit 4.
  • the winding unit 3 unwinds the film substrate W that is a film-like substrate from the substrate roll.
  • the base material roll is obtained by winding the film base material W into a roll shape.
  • the film base W has a width of about 1 meter and a small thickness of about several tens to several hundreds of ⁇ m, for example, and is made of, for example, resin or glass.
  • the said film base material conveyance part conveys the unwound film base material W to a surface treatment process. In this surface treatment step, the film substrate W is subjected to a surface treatment by a sputtering method, a CVD method, or the like.
  • the said winding part 4 winds up the film base material W in which the surface treatment was given again as a roll-shaped base material roll.
  • the film forming apparatus 1 conveys a long film substrate W having a length of, for example, 100 m or more from the substrate roll of the unwinding unit 3 to the substrate roll of the winding unit 4 by a so-called roll-to-roll method.
  • it is an apparatus for performing a surface treatment on the film substrate W.
  • the up-down direction toward the paper surface in FIG. 1 is defined as the up-down direction of the film forming apparatus 1, and the left-right direction toward the paper surface is also defined as the left-right direction of the film forming apparatus 1.
  • the paper surface penetration direction of FIG. 1 is called the front-back direction.
  • the film forming apparatus 1 further includes a vacuum chamber 5.
  • the vacuum chamber 5 accommodates the unwinding unit 3, the substrate conveying device 2 a, and the winding unit 4.
  • the vacuum chamber 5 is, for example, a box shape, and is formed in a bowl shape with a hollow inside. Further, the vacuum chamber 5 has a function of keeping the inside airtight with respect to the outside of the vacuum chamber 5.
  • a vacuum pump (not shown) is provided below the vacuum chamber 5. By this vacuum pump, the inside of the vacuum chamber 5 is depressurized to a low pressure state or a vacuum state.
  • the unwinding part 3 is arranged on the upper left side of the central part in the vertical direction in the vacuum chamber 5 shown in FIG.
  • the unwinding unit 3 has an unwinding core that is a winding core.
  • the unwinding core has, for example, a cylindrical shape or a columnar shape slightly longer than the width of the film base W.
  • a base material roll is formed by winding the film base material W around the unwinding core.
  • the unwinding unit 3 is configured by attaching the base material roll to the film forming apparatus 1.
  • the unwinding unit 3 is disposed in the vacuum chamber 5 so that the rotation center axis thereof is perpendicular to the paper surface of FIG.
  • the film forming apparatus 1 includes a film forming unit.
  • the film forming unit is provided at a position below the center in the vertical direction in the vacuum chamber 5 shown in FIG. 1 and below the unwinding unit 3.
  • the film forming unit performs a surface treatment (surface treatment step) on the surface of the film substrate W unwound from the unwinding unit 3 by, for example, sputtering or plasma CVD.
  • a sputtering film forming unit using a sputtering method is disclosed as an example of the film forming unit.
  • the base material transport device 2a includes a base material transport roller for transporting the film base material W in the sputtering film forming unit that performs the surface treatment process.
  • FIG. 1 shows a film forming roller 6 and a pair of sputter evaporation sources T which are a part of the configuration of a general sputtering film forming unit and are examples of the substrate transport roller.
  • the film forming roller 6 of the sputtering film forming unit shown in FIG. 1 is formed in a cylindrical shape or a columnar shape with a stainless material or the like.
  • the film forming roller 6 has a cylindrical outer peripheral surface, and conveys the film substrate W wound around the film.
  • the film forming roller 6 has a rotation shaft 10 and rotates around a rotation center axis that is a center axis of the rotation shaft 10.
  • the film forming roller 6 is disposed so that the rotation center axis is substantially parallel to the rotation center axis of the unwinding unit 3.
  • the base material transport device 2 a includes a gas introduction mechanism 14 a in addition to the film forming roller 6.
  • the gas introduction mechanism 14 a is a flow path for introducing gas into a space formed between the base material W and the film forming roller 6 in order to improve the heat transfer efficiency between the base material W and the film forming roller 6. Form. Detailed configurations of the film forming roller 6 and the substrate conveying device 2a will be described later.
  • the sputter evaporation source T is disposed on each of the left and right sides of the film forming roller 6 so as to face the film substrate W conveyed by the film forming roller 6.
  • the sputter evaporation source T is an evaporation source containing a component to be deposited on the surface of the film substrate W. As is well known, this component is sputtered (evaporated) by glow discharge, guided to the surface of the film substrate W, and deposited on the surface.
  • the winding unit 4 is arranged on the right side of the unwinding unit 3 in the vacuum chamber 5 shown in FIG.
  • the winding unit 4 winds the film substrate W that has been surface-treated through the substrate transport apparatus 2a as a roll-shaped substrate roll, and has the same configuration as the unwinding unit 3 , Are arranged similarly.
  • the base material transport device 2a further includes a first guide roller 7 and a second guide roller 8 as shown in FIG.
  • the first guide roller 7 is provided near the film forming roller 6 between the unwinding unit 3 and the film forming roller 6. Specifically, the first guide roller 7 is disposed closer to the center of the vacuum chamber 5 than the left end of the film forming roller 6 in the left-right direction of the vacuum chamber 5, that is, closer to the rotation shaft 10 of the film forming roller 6.
  • the first guide roller 7 is disposed so as to be rotatable about a rotation center axis provided thereto, and the rotation center axis is parallel to the rotation center axes of the unwinding unit 3 and the film forming roller 6.
  • the first guide roller 7 makes it possible to always transport the substrate W from the film forming roller 6 from a certain angle and direction.
  • the second guide roller 8 is disposed between the winding unit 4 and the film forming roller 6 and on the right side of the first guide roller 7.
  • the second guide roller 8 has the same configuration as the first guide roller 7 and has an outer diameter that is substantially the same as the outer diameter of the first guide roller 7.
  • FIG. 2A is a cross-sectional side view of the base material transport apparatus 2a having the film forming roller 6, and the base material transport apparatus 2a when viewed from the right or left side of the film forming apparatus 1 shown in FIG.
  • the configuration is shown.
  • the vertical direction toward the paper surface of FIG. 2 coincides with the vertical direction of the film forming apparatus 1 shown in FIG. 1, and the film forming roller 6 shown in the direction perpendicular to the paper surface (through direction) in FIG.
  • the axis (rotating shaft 10) is shown in FIG. 2 along the left-right direction.
  • the film forming roller 6 is provided so as to be sandwiched between a pair of bearings 9, a right end large diameter portion 11a, a left end large diameter portion 11b, and both end large diameter portions 11a and 11b in addition to the rotating shaft 10.
  • the bearings 9 are arranged at positions separated from each other in the front-rear direction in the vacuum chamber 5 and hold the end portions of the rotating shaft 10 at the positions to be rotatable. That is, the rotating shaft 10 can rotate while being held by both bearings 9.
  • the both end large diameter portions 11 a and 11 b and the central small diameter portion 12 are arranged around the rotary shaft 10 so as to rotate integrally with the rotary shaft 10.
  • the rotary shaft 10 is a columnar or cylindrical member having a constant outer diameter. Parts near both ends of the rotating shaft 10 are held by the bearings 9. In this way, the rotary shaft 10 can rotate around its longitudinal direction, that is, the axial center along the axial direction, and is rotationally driven at a predetermined rotational speed by a driving device (not shown).
  • the right end large-diameter portion 11 a is provided at a position closer to the bearing 9 on the right side than the center in the longitudinal direction of the rotary shaft 10, and the right end large-diameter portion 11 b is the longitudinal axis of the rotary shaft 10. It is provided at a position close to the bearing 9 on the left side of the center in the direction.
  • Both the large-diameter portions 11a and 11b have a disk shape and have a predetermined thickness sufficient to wind the end (side) side in the width direction of the film base W.
  • Both-end large-diameter portions 11a and 11b each have a cylindrical second outer peripheral surface and a third outer peripheral surface.
  • the diameters of the second and third outer peripheral surfaces that is, the outer diameters of the large-diameter portions 11a and 11b at both ends are arbitrarily determined according to the desired performance of the film forming apparatus 1, but at least from the outer diameter of the rotating shaft 10. Is also big.
  • Both-end large-diameter portions 11a and 11b are provided so as to be coaxial with the rotary shaft 10 at a position having a sufficient space therebetween. The spacing is sufficient for both ends (both sides) in the width direction of the film substrate W to be wound around the large-diameter portions 11a and 11b at both ends, and has a size smaller than the width of the film substrate W. .
  • Both-end large-diameter portions 11a and 11b are provided at positions that are substantially symmetrical with respect to the center position in the longitudinal direction of the rotating shaft 10.
  • the large-diameter portions 11a and 11b at both ends may be formed integrally with the rotating shaft 10, or may be formed as a member different from the rotating shaft 10 and fixed to the rotating shaft 10 using a fixture. In any case, the large-diameter portions 11 a and 11 b at both ends can be rotated in accordance with the rotation of the rotating shaft 10.
  • FIG. 2 shows a state in which the film base W is wound around the large-diameter portions 11a and 11b at both ends.
  • the center position in the width direction of the film substrate W substantially coincides with the center position in the longitudinal direction of the rotating shaft 10, and both end portions (both side portions) in the width direction of the film substrate W are large diameter portions at both ends. It exists on the 2nd outer peripheral surface of 11a, 11b. Both ends of the film base W in the width direction do not protrude from the ends of the large-diameter portions 11a and 11b to the end side of the rotating shaft 10, that is, both outer sides.
  • the film base W wound around the large diameter portions 11a and 11b at both ends is conveyed by the rotation of the large diameter portions 11a and 11b at both ends.
  • the central small-diameter portion 12 is a column or cylinder having a constant outer diameter.
  • the length along the axial center of the central small diameter portion 12 is smaller than the interval between the large diameter portions 11a and 11b at both ends.
  • the central small diameter portion 12 has an outer diameter smaller than the outer diameters of the large diameter portions 11a and 11b at both ends. That is, the central small diameter portion 12 has a first outer peripheral surface having a diameter smaller than the diameters of the second and third outer peripheral surfaces of the large diameter portions 11a and 11b at both ends.
  • the central small-diameter portion 12 is provided so as to be coaxial with the large-diameter portions 11 a and 11 b at both ends and the rotating shaft 10.
  • the central small diameter portion 12 may be formed integrally with the rotating shaft 10 or may be formed as a member different from the rotating shaft 10 and fixed to the rotating shaft 10 using a fixture. In any case, the central small diameter portion 12 can be rotated in accordance with the rotation of the rotating shaft 10.
  • the outer diameter of the central small-diameter portion 12, that is, the diameter of the first outer peripheral surface is smaller than the outer diameters of the large-diameter portions 11a and 11b at both ends, that is, the diameters of the second and third outer peripheral surfaces.
  • a space (gap) is formed in the gap.
  • the space formed between the film substrate W and the first outer peripheral surface of the central small diameter portion 12 is particularly referred to as a gas introduction space.
  • the diameter of the central small diameter portion 12 is arbitrarily set so that a gas introduction space suitable for the desired performance of the film forming apparatus 1 is formed between the first outer peripheral surface of the central small diameter portion 12 and the film substrate W. It is determined.
  • the gas introduction mechanism 14 a forms a flow path for introducing gas into the gas introduction space, that is, the space formed between the film base W and the first outer peripheral surface of the central small diameter portion 12.
  • the central small-diameter portion 12 has a central position in the longitudinal direction of the central small-diameter portion 12 in the axial direction of the rotating shaft 10, that is, in the longitudinal direction, and an intermediate position between both large-diameter portions 11 a and 11 b and a central position of the rotating shaft 10. It is provided at a position that substantially matches.
  • the film forming roller 6 has an outer shape that is substantially symmetrical with respect to the center position in the longitudinal direction of the rotating shaft 10.
  • the rotation shaft 10 rotates, so that the central small-diameter portion 12 formed integrally with the rotation shaft 10 or fixed to the rotation shaft 10 and both ends large.
  • the diameter portions 11a and 11b rotate in synchronization with each other.
  • the substrate transport apparatus 2a includes a pressure partition wall 13 in addition to the first guide roller 7, the second guide roller 8, the film forming roller 6 and the gas introduction mechanism 14a.
  • the pressure partition wall 13 is a surface of the first outer peripheral surface of the central small diameter portion 12 that does not face the substrate W, that is, the upper surface in FIGS. 2 (a) and 2 (b).
  • the first outer peripheral surface of the central small-diameter portion 12 and the second and third outer peripheral surfaces of the large-diameter portions 11a and 11b on both sides of the film forming roller 6 that are provided at positions facing each other are covered.
  • the opening between the first guide roller 7 and the second guide roller 8 is closed.
  • the pressure partition 13 provided in this way forms a closed space that is a substantially sealed space together with the base material W, the central small diameter portion 12, and the large diameter portions 11a and 11b at both ends, which are in contact with the large diameter portions 11a and 11b at both ends. create.
  • the closed space includes the gas introduction space, that is, a space formed between the film substrate W and the first outer peripheral surface of the central small diameter portion 12, and the gas introduction space is thereby almost sealed.
  • the gas introduction space is sealed to such an extent that the gas is introduced into the closed space through the gas introduction mechanism 14a so that the pressure inside the gas introduction space is sufficiently maintained.
  • the inclusion of the gas introduction space in the almost closed space as described above makes it possible to avoid the problem that the pressure in the gas introduction space does not rise sufficiently in a vacuum environment. That is, it is possible to maintain the gas introduction space at a predetermined pressure, and it is possible to improve the heat transfer efficiency between the film base W and the central small diameter portion 12 through the gas in the gas introduction space. .
  • the pressure partition wall 13 includes a first airtight portion 13 a facing the substrate W wound around the first guide roller 7, and a substrate wound around the second guide roller 8. It has the 2nd airtight part 13b facing W, the connection part 13c which mutually connects the 1st airtight part 13a and the 2nd airtight part 13b, and the 1st wall part 13d and the 2nd wall part 13e.
  • the first and second wall portions 13d and 13e cover the first hermetic portion 13a, the second hermetic portion 13b, and the connecting portion 13c from both outer sides in the left-right direction of the pressure bulkhead 13 (left-right direction in FIG. 2A), respectively. It is provided as follows.
  • the first hermetic portion 13 a is a columnar member having substantially the same length as the film forming roller 6 along the longitudinal direction of the first guide roller 7, that is, the axial direction. It has a curved surface facing the outer peripheral surface of the guide roller 7.
  • the curved surface has a shape along the curvature of the substrate W wound around the first guide roller 7, that is, a concave surface, and this curved surface is formed from, for example, the substrate W wound around the first guide roller 7. It is arranged at a position separated by a minute distance of about 1 mm.
  • the second airtight portion 13b has the same configuration and shape as the first airtight portion 13a, and has a curved surface facing the second guide roller 8, and this curved surface is wound around the second guide roller 8. It is arranged at a position away from the hung base material W by a minute distance of about 1 mm, for example.
  • the connecting portion 13c is a flat plate-like member having substantially the same length as the length along the longitudinal direction of the first airtight portion 13a and the second airtight portion 13b.
  • the connecting part 13c connects the first airtight part 13a and the second airtight part 13b arranged as described above.
  • the connecting portion 13c extends along the longitudinal direction of the first hermetic portion 13a and the second hermetic portion 13b, that is, the direction parallel to the axial direction of the film forming roller 6, and the central small diameter portion in the film forming roller 6
  • the two airtight portions 13a and 13b are integrally connected so as to cover the first outer peripheral surface of 12 and the second and third outer peripheral surfaces of both end large diameter portions 11a and 11b so as not to face the film base W. Thereby, the opening between the first guide roller 7 and the second guide roller 8 is closed.
  • the first airtight portion 13a, the second airtight portion 13b, and the connection portion 13c are integrally connected to each other, so that an opening between the first guide roller 7 and the second guide roller 8 is obtained.
  • the lid that closes up is constructed. At this time, openings are formed on one end side and the other end side of the integrated first airtight portion 13a, second airtight portion 13b, and connection portion 13c.
  • the first wall portion 13d and the second wall portion 13e are respectively disposed so as to close the openings.
  • the first wall portion 13d is a flat plate-like member having substantially the same width as the distance between the first guide roller 7 and the second guide roller 8. As described above, the first wall portion 13d includes the first airtight portion 13a, the second airtight portion 13b, and the opening formed between the connecting portion 13c and the large-diameter portions 11a and 11b. Close. 13 d of 1st wall parts are arrange
  • the first wall portion 13 d faces the surface facing the substrate W conveyed from the first guide roller 7 to the film forming roller 6 and the substrate W conveyed from the film forming roller 6 to the second guide roller 8. And these surfaces are formed along the conveyance direction of the substrate W.
  • the surface formed along the conveyance direction of the substrate W between the first guide roller 7 and the second guide roller 8 and the film forming roller 6 is as small as about 1 mm from the opposite substrate W, for example.
  • the first wall portion 13d is disposed at a position where the curved surface facing the right end large diameter portion 11a is separated by a minute distance of, for example, about 1 mm from the second outer peripheral surface of the right end large diameter portion 11a.
  • the second wall portion 13e has the same configuration and shape as the first wall portion 13d, and is provided on the other end side of the integrated first airtight portion 13a, second airtight portion 13b, and connection portion 13c. It has been.
  • a space is formed between the pressure partition wall 13 and the film forming roller 6 by the pressure partition wall 13 having the above-described configuration, and this space is wound around the large-diameter portions 11a and 11b at both ends.
  • a continuous space surrounding the entire outer periphery of the central small-diameter portion 12 of the film forming roller 6 is formed by being continuous with the gas introduction space formed between the substrate W and the central small-diameter portion 12.
  • the pressure partition wall 13 having the above-described configuration can substantially isolate the space surrounding the entire outer periphery of the central small diameter portion 12 of the film forming roller 6 from the space inside the vacuum chamber 5 that is the outer space. It becomes possible to adjust the pressure of the gas introduction space to a pressure different from the pressure in the vacuum chamber 5 by the gas introduction mechanism 14a described below.
  • the gas introduction mechanism 14a is constituted by, for example, a tubular member having a hollow inside, for example, a pipe.
  • a plurality of holes for allowing the gas supplied to the cavity in the pipe to flow out of the pipe are formed at a plurality of positions arranged along the longitudinal direction.
  • the tubular gas introduction mechanism 14 a having such a configuration is disposed between the pressure partition wall 13 and the central small diameter portion 12 so as to extend along the longitudinal direction of the film forming roller 6.
  • an introduction gas source 15 is connected to the gas introduction mechanism 14a via a gas supply pipe and a regulating valve 16.
  • the adjustment valve 16 is composed of a needle valve or the like, is provided in the middle of the gas supply pipe, and adjusts the flow rate of the gas supplied to the gas introduction mechanism 14a.
  • the gas supplied into the space through the gas introduction mechanism 14a is an inert gas that does not adversely affect the film formation by the sputtering method.
  • the gas supplied through the gas introduction mechanism 14a fills the space formed between the pressure partition wall 13 and the film forming roller 6, and the base material W and the central small diameter portion wound around the large diameter portions 11a and 11b at both ends. 12 flows into the gas introduction space formed between the two.
  • the space surrounding the entire outer periphery of the central small-diameter portion 12 of the film forming roller 6 is filled with gas, and the pressure of the gas introduction space filled with gas is higher than the pressure in the vacuum chamber 5 that has been decompressed. Become. Due to this pressure difference, gas flows out from a gap of about 1 mm provided between the pressure partition wall 13 and the base material W and the large-diameter portions 11a and 11b at both ends.
  • the pressure of the gas introduction space filled with the gas is determined by the balance with the gas supply amount.
  • the surface pressure (contact pressure) that the substrate W receives from the cylindrical surface of the film forming roller 6 is about 140 Pa.
  • the tension of the substrate W changes, the surface pressure changes in proportion to the tension. Therefore, when gas is introduced (supplied) into the gas introduction space between the substrate W and the central small diameter portion 12 of the film forming roller 6, the surface pressure that the substrate W receives from the film forming roller 6 in the gas introduction space.
  • the substrate W and the first outer peripheral surface of the central small-diameter portion 12 of the film forming roller 6 through the gas introduction mechanism 14a It becomes possible to seal the gas supplied in the gas introduction space in the gas introduction space by the contact pressure of the base material W.
  • the film forming process by the sputtering method is performed under a pressure of the order of 0.1 Pa.
  • the mean free path of the inert gas argon (Ar) at 0.1 Pa is about 7 cm.
  • the mean free path is sufficiently larger than the size of the gap space of the gas introduction space, and may be regarded as a molecular flow.
  • the mean free path is inversely proportional to the pressure, and in the pressure range of 10 to 100 Pa, the mean free path is 0.07 to 0.7 mm, which is equivalent to the size of the gap space. Therefore, this region can be regarded as a region where a transition is made from a molecular flow to a viscous flow.
  • the number of gas molecules increases in proportion to the pressure, and the number of gas molecules colliding with the wall surface surrounding the gas introduction space also increases.
  • the heat balance due to convection between the wall surfaces is an exchange of energy due to collisions of gas molecules when viewed microscopically, and the amount of heat transferred increases as the number of collisions increases. Therefore, the heat transfer coefficient is proportional to the pressure.
  • the diameter of the first guide roller 7 and the second guide roller 8 is 74 mm
  • the width of the first guide roller 7 and the second guide roller 8 is 370 mm
  • the gas outlet gap formed by the gap between the guide roller 8 and the pressure partition wall 13 can be modeled as a rectangular slit having an opening of 1 mm ⁇ width of 370 mm and a depth of 60 mm (1 ⁇ 4 of the circumferential length of 74 mm in diameter).
  • the influence of the curvature of the first guide roller 7 and the second guide roller 8 and the influence of the gap between the side surfaces of the first guide roller 7 and the second guide roller 8 occur, but they are not considered here.
  • the conductance in this case is estimated to be about 0.003 [m 3 / s] from the modeled rectangular slit equation, and the pressure in the gas introduction space is 100 Pa and the external pressure in the gas introduction space is 0 Pa.
  • the amount of gas leakage from the partition wall 13 can be estimated to be about 180 sccm.
  • a high vacuum exhaust pump having a sufficient exhaust capability such as a turbo molecular pump (TMP) as a pump for constantly introducing a gas corresponding to the gas leakage amount through the gas introduction mechanism 14a and exhausting the inside of the vacuum chamber 5.
  • TMP turbo molecular pump
  • the pressure in the gas introduction space can be increased to about 100 to 1000 times the process pressure at the time of sputtering, and the corresponding heat transfer coefficient (which is proportional to the pressure for molecular flow) We can expect a rise.
  • the vacuum chamber 5 is used.
  • the gas is supplied to the space between the base material W and the non-contact portion that does not contact the base material W among the base material transport rollers while maintaining the internal pressure at a vacuum required for sputtering, and the pressure Can be maintained. Therefore, the contribution of heat transfer using gas molecules as a medium in addition to radiant heat can be increased, and the heat transfer efficiency from the substrate W, whose temperature has been increased by heat input by the film forming process, to the film forming roller 6 is improved. .
  • the heat that has entered the substrate W by a film formation process such as sputtering can be sufficiently released, and the substrate conveyed to the substrate conveyance roller having the two-stage shape, in this embodiment, the film formation roller 6. Generation of wrinkles and creases in the material W can be prevented.
  • FIG. 3A is a cross-sectional side view of the base material transport apparatus 2b of the film forming apparatus 1 according to the second embodiment, that is, when the base material transport apparatus 2b is viewed from the right or left side of the film forming apparatus 1.
  • FIG. 3B is a sectional view taken along line IIIB-IIIB in FIG.
  • the substrate transport apparatus 2b of the present embodiment does not have the pressure partition wall 13, and the gas introduction constructed in the central small diameter portion 12 of the film forming roller 6 in place of the gas introduction mechanism 14a made of the pipe. It differs from the substrate conveying apparatus 2a of 1st Embodiment by the point provided with the mechanism 14b. In the following description, these differences will be described in detail.
  • the gas introduction mechanism 14 b in the present embodiment is provided in the central small diameter portion 12 of the film forming roller 6.
  • the gas introduction mechanism 14b has a plurality of gas flow paths formed in the central small diameter portion 12, that is, a plurality of perforations 12b.
  • These perforations 12b are arranged in the circumferential direction of the central small diameter portion 12, and each perforation 12b is radial from the inside of the central small diameter portion 12 toward the first outer peripheral surface along the radial direction of the central small diameter portion 12. It extends to.
  • Each perforation 12b has a slit shape extending from one end side to the other end side along the longitudinal direction of the central small diameter portion 12. As shown in FIG.
  • each slit-shaped perforation 12b has a center formed by slit-shaped perforations 12b adjacent to each other in the circumferential direction in the circular cross section of the central small-diameter portion 12.
  • the corners are formed at 12 points so that the angle is approximately 30 degrees, that is, in the circumferential direction.
  • the number of the perforations 12b is not limited and may be more or less than 12.
  • the perforations 12b form the gas introduction mechanism 14b that forms a gas flow path.
  • the fluctuation of the pressure inside becomes large. Therefore, the gas introduction mechanism 14b is configured so that the central angle formed by the slit-shaped perforations 12b adjacent in the circumferential direction is approximately 45 degrees or less, that is, the perforations 12b are formed at eight or more locations. It is desirable to be constructed.
  • each of the perforations 12b constituting the gas flow path has a slit shape, but the shape of the gas flow path along the width direction of the central small diameter portion 12 is not particularly limited.
  • the slit-shaped perforations 12b are each divided into a plurality of holes in the width direction (axial direction) of the central small diameter portion 12, and a plurality of holes arranged in parallel along the width direction of the central small diameter portion 12 A gas flow path may be formed.
  • the gas introduction mechanism 14b including the plurality of perforations 12b that is, the plurality of gas flow paths, for example, with respect to the perforations 12b in the horizontal position along the left-right direction
  • An inert gas or the like is introduced from the introduction gas source 15 having the same configuration.
  • the introduction gas source 15 does not introduce the gas into all the perforations 12b of the gas introduction mechanism 14b at the same time, but the perforations 12b passing through the horizontal position among the plurality of perforations 12b rotating with the rotation of the film forming roller 6. In contrast, gas is introduced.
  • gas can be introduced sequentially into the plurality of perforations 12b that constitute the gas flow path, and the film forming roller 6 It is possible to always introduce gas from a fixed position and phase into the gas introduction space formed between the base material W wound around and the central small diameter portion 12.
  • the process source such as the sputter evaporation source T
  • a non-rotating gas supply pipe and a rotating gas The introduction of gas through a narrow gap with the introduction mechanism 14b can be considered.
  • the gas slightly leaking into the vacuum chamber from the opening of the gap is routed to a place where the influence on the film forming process is small, or is induced by a differential exhaust mechanism to a place where the influence is also small, etc. It is possible to discharge gas that leaks slightly from the gap. Most of the gas that has not leaked from the gap flows into the gas introduction mechanism 14 b formed in the film forming roller 6.
  • the gas is separated by the gas flow path sufficiently away from the position where the wound substrate W is separated from the film forming roller 6 in the direction opposite to the rotation direction of the film forming roller 6.
  • a space corresponding to the slit-like rectangular duct shown in the first embodiment is formed by the central small diameter portion 12 and the substrate W wound around.
  • the arc length with a central angle of 30 degrees is about 60 mm.
  • the gas channel ejection port is provided at a position about 30 degrees apart from the point at which the substrate W is separated from the film forming roller 6 in the direction opposite to the rotation direction, the first embodiment Conductance corresponding to the configuration according to the above can be obtained.
  • FIG. 4A shows a sectional side view of the film forming roller 6 of the film forming apparatus 1 according to the third embodiment, that is, the configuration of the film forming roller 6 when viewed from the right or left side of the film forming apparatus 1.
  • FIG. 4B is a cross-sectional view taken along line IVB-IVB in FIG.
  • the film forming roller 6 of the present embodiment has the same configuration as the film forming roller 6 of the second embodiment, but instead of the gas introduction mechanism 14b, a gas flow path having a shape different from the gas flow path is formed.
  • the second embodiment is different from the second embodiment in that a gas introduction mechanism 14c is provided. In the following description, the configuration of the gas introduction mechanism 14c will be described in detail.
  • the large diameter portions 11a and 11b at both ends rotate, but the central small diameter portion 12 does not rotate. That is, although the base material W is conveyed by rotation of both large diameter parts 11a and 11b, the central small diameter part 12 does not rotate.
  • the gas introduction mechanism 14c is formed in the central small diameter portion 12 which is such a non-rotating member that does not rotate.
  • the gas introduction mechanism 14 c includes a groove-shaped first gas flow path 17 a and a second gas formed on the first outer peripheral surface of the central small diameter portion 12 along the longitudinal direction of the central small diameter portion 12.
  • the first and second gas flow paths 17a and 17b are grooves formed on the outer peripheral surface of the central small diameter portion 12, and extend substantially parallel to each other, and these distances are the first outer periphery of the central small diameter portion 12. Less than half the circumference of the surface. These gas flow paths 17 a and 17 b correspond to a certain position (a predetermined position) in the gas introduction space formed between the base material W wound around the film forming roller 6 and the central small diameter portion 12. So that it is arranged. Specifically, in FIG. 4B, a straight line that is directly above from the center of the central small-diameter portion 12, that is, a straight line that faces the 12 o'clock direction of the clock, is spaced 120 degrees and 240 degrees clockwise from this straight line. The first and second gas flow paths 17a and 17b are arranged at positions.
  • the gas introduction path 19 is formed substantially at the axial center position of the film forming roller 6, and the introduction gas source 15 having the same configuration as the introduction gas source 15 according to the first embodiment is connected to the gas introduction path 19. Yes.
  • the introduction gas source 15 introduces an inert gas or the like into the gas introduction passage 19, and the introduced gas passes through the first and second connection passages 18a and 18b, respectively, and the first and second gas passages 17a and 17a, 17b. In this way, the gas can be introduced at a fixed angular position with respect to the gas introduction space formed between the base material W wound around the film forming roller 6 and the central small diameter portion 12.
  • the pressure in the region of 120 to 240 degrees sandwiched between the two gas flow paths 17a and 17b becomes almost constant at a value higher than the pressure around it, and heat transfer occurs mainly in this region. Therefore, by disposing a process source such as the sputter evaporation source T at a position facing this region, the heat transfer efficiency from the substrate W whose temperature has been increased by the heat of the film formation process to the film formation roller 6 can be improved. It becomes possible to increase the productivity of the process.
  • the gas introduced into the gas introduction space is from the angular position at which the substrate W is separated from the film forming roller 6, that is, the positions separated from the reference upward straight line by approximately 90 degrees and 270 degrees.
  • the introduced gas always flows in a certain direction toward the outflow side to the peripheral space.
  • the structure and position of the gas introduction path 19, the first and second connection paths 18 a and 18 b, and the first and second gas paths 17 a and 17 b formed in the central small-diameter section 12 that is a non-rotating section are the sputter evaporation source. It can be appropriately determined according to the arrangement of peripheral process sources such as T.
  • FIG. 5A is a cross-sectional side view of the base material transport device 2d of the film forming apparatus 1 according to the fourth embodiment, that is, a view of the base material transport device 2d viewed from the right or left side of the film forming device 1.
  • FIG. 5B is a cross-sectional view taken along the line VB-VB in FIG.
  • the base material transport device 2d of the present embodiment has substantially the same configuration as the base material transport device 2a of the first embodiment, but has a temperature raising / lowering mechanism inside the central small diameter portion 12. It is different from the substrate conveying device 2a of the first embodiment. In the following description, the configuration of the temperature raising / lowering mechanism will be described in detail.
  • the temperature raising / lowering mechanism has a plurality of temperature raising / lowering portions provided inside the central small diameter portion 12, that is, a plurality of temperature raising / lowering medium paths 20, and fluid such as heat medium oil and water is raised and lowered in these temperature raising / lowering medium paths 20.
  • a heating medium By circulating as a heating medium, the temperature of the central small diameter portion 12 is changed.
  • Each of the heating / warming medium paths 20 is constituted by, for example, a pipe or other tubular member.
  • each temperature raising / lowering part may be comprised by the sheath heater embedded in the center small diameter part 12.
  • the temperature raising / lowering medium path 20 is arranged so as to introduce the temperature raising / lowering medium from the outside of the film forming roller 6 to the inside of the central small diameter portion 12. That is, the temperature raising / lowering medium path 20 has a portion embedded in the central small diameter portion 12 and a portion connecting this portion and the heat medium supply source outside the film forming roller 6. In particular, a portion embedded in the central small diameter portion 12 is arranged along a surface of the first outer peripheral surface of the central small diameter portion 12 that faces the substrate W. Specifically, three regions ZONE1, ZONE2, and ZONE3 as shown in FIG.
  • the heating / cooling medium path 20 provided in each of the zones ZONE1 to ZONE3 is arranged so as to be guided outside the film forming roller 6 after making a round along the surface facing the substrate W in the zone.
  • the large-diameter portions 11a and 11b at both ends rotate, but the central small-diameter portion 12 does not rotate. That is, although the base material W is conveyed by the rotating large-diameter portions 11a and 11b at both ends, the central small-diameter portion 12 does not rotate.
  • the heated or cooled temperature control medium circulates in the tubular heating / cooling medium path 20 arranged independently of each other as described above, so that it faces the base material W of each of the regions ZONE1 to ZONE3 in the central small diameter portion 12.
  • the temperature of each surface to be controlled can be controlled independently, that is, it can be raised or lowered, whereby the temperature of the substrate W facing the central small diameter portion 12 can be raised or lowered.
  • the temperature raising / lowering mechanism including the plurality of temperature raising / lowering medium paths 20 enables the temperature of the surface of the central small diameter portion 12 facing the base material W to be raised and lowered independently for each of a plurality of regions.
  • the single film forming roller 6 it is possible to adjust the temperature of the substrate W facing the central small-diameter portion 12 to a temperature corresponding to each of a plurality of film forming processes. That is, according to the substrate transport apparatus 2d of the present embodiment, since it is not necessary to use a plurality of film forming rollers 6 for each temperature of the film forming process, the capacity of the vacuum chamber 5 can be reduced, and as a result, film forming is performed.
  • the apparatus 1 can be reduced in size.
  • the film forming apparatus 1 that performs surface treatment (film forming process) such as sputtering or plasma CVD is exemplified, and the characteristics of the substrate transfer apparatus 2d used in the film forming apparatus 1 are described.
  • the base material transport apparatus 2d having the configuration described in the present embodiment is an apparatus that needs to control the temperature of the base material W when transporting the film-shaped base material W, the base film transport apparatus 2d is connected to the film forming apparatus 1.
  • the present invention can be applied to various devices.
  • a base material transport device provided in a film forming apparatus that performs a film forming process on the surface of a base material, the base material transport roller including the base material transport roller, What can improve the heat transfer efficiency in the non-contact location is provided, avoiding a contact with a center part and a base material.
  • the apparatus includes a base material transport roller for transporting the base material, and a gas introduction mechanism for introducing gas between the base material transport roller and the base material.
  • the base material transport roller is a portion constituting a central portion in the axial direction along the axis of the base material transport roller, and a central small diameter portion having a first outer peripheral surface, and an axis of the central small diameter portion Each of which has a second outer peripheral surface and a third outer peripheral surface which are respectively located on both outer sides in the direction and come into contact with the base material, and transports the base material by rotating around the axis of the base material transport roller. And a large diameter portion at both ends.
  • the second outer peripheral surface and the third outer peripheral surface are configured to prevent the base material in contact with the second outer peripheral surface and the third outer peripheral surface from contacting the first outer peripheral surface. It has a diameter larger than the diameter of the outer peripheral surface.
  • the gas introduction mechanism has a gas introduction flow path for introducing gas into a space formed between the base material and the first outer peripheral surface of the central small diameter portion.
  • the second and third outer peripheral surfaces of the large-diameter portions at both ends of the base material transport roller have a diameter larger than the diameter of the first outer peripheral surface of the central small-diameter portion.
  • the base material can be prevented from coming into contact with the first outer peripheral surface in a state where the base material is in contact with the second and third outer peripheral surfaces.
  • the base material conveying apparatus further includes a pressure partition wall provided at a position facing a surface not facing the base material of the first outer peripheral surface of the central small diameter portion, and the pressure partition wall has a large diameter at both ends.
  • the base material contacting the second outer peripheral surface and the third outer peripheral surface of the portion, the central small diameter portion, and the large diameter portions at both ends are disposed so as to surround a closed space, and the base material and the central small diameter portion It is preferable that a space formed between the outer peripheral surface of the first space is included in the closed space.
  • the space between the base material and the first outer peripheral surface of the central small-diameter portion is included in the closed space surrounded by the pressure partition wall or the like, so that the space outside the closed space is, for example, exhausted. Even if the pressure is reduced, it becomes possible to introduce gas into the space between the base material and the first outer peripheral surface of the central small diameter portion.
  • the gas introduction mechanism is a gas channel that extends from the inside of the central small-diameter portion toward the first outer peripheral surface of the central small-diameter portion as the gas introduction channel, and is supplied to the inside of the central small-diameter portion. It is preferable to have a flow path that introduces the liquid into a space formed between the base material and the central small diameter portion. This gas introduction mechanism makes it possible to efficiently introduce gas into the space between the base material and the first outer peripheral surface of the central small diameter portion by effectively using the central small diameter portion.
  • the gas introduction channel introduces gas from a certain position in the space with respect to the space formed between the base material and the first outer peripheral surface of the central small diameter portion. Is preferred.
  • the base material conveyance apparatus which concerns on this invention is further equipped with the temperature raising / lowering mechanism which changes the temperature of the said center small diameter part, and the said temperature raising / lowering mechanism is the said base material among the 1st outer peripheral surfaces of the said center small diameter part. It is preferable to include a plurality of heating / cooling units that change the temperatures of the opposing surfaces independently of each other in a plurality of regions. Thereby, it becomes possible to adjust the temperature of the base material W facing the first outer peripheral surface of the central small diameter portion to a temperature corresponding to each of a plurality of film forming processes on a single base material transport roller.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif de transport de substrat (2a) capable d'améliorer l'efficacité de transmission de chaleur en un site de non-contact entre un substrat et un rouleau de transport de substrat. Le dispositif est équipé d'un rouleau de transport de substrat (6) et d'un mécanisme d'introduction de gaz (14a). Le rouleau de transport de substrat (6) présente une section centrale de petit diamètre (12) formée dans la section centrale de la direction axiale du rouleau et présentant une première surface circonférentielle externe, et des sections de large diamètre aux deux extrémités (11a, 11b) positionnées des deux côtés à l'extérieur dans la direction axiale de la section centrale de petit diamètre (12) et présentant une deuxième et une troisième surface circonférentielle externe qui sont en contact avec le substrat (W). La deuxième et la troisième surface circonférentielle externe présentent un diamètre plus grand que celui de la première surface circonférentielle externe de manière à empêcher un contact entre la première surface circonférentielle externe et le substrat (W). Le mécanisme d'introduction de gaz (14a) présente un canal d'introduction de gaz, destiné à introduire du gaz dans l'espace formé entre le substrat (W) et la première surface circonférentielle externe de la section centrale de petit diamètre (12).
PCT/JP2013/006902 2012-12-21 2013-11-25 Dispositif de transport de substrat WO2014097544A1 (fr)

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CN107265152A (zh) * 2017-06-09 2017-10-20 浙江汇锋薄膜科技有限公司 一种导电薄膜的制备设备上的放料张紧装置

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JP6233262B2 (ja) * 2014-09-30 2017-11-22 住友金属鉱山株式会社 長尺フィルムの搬送および冷却用ロール、ならびに該ロールを搭載した長尺フィルムの処理装置
JP6233292B2 (ja) * 2014-12-23 2017-11-22 住友金属鉱山株式会社 長尺フィルムの搬送および冷却用ロール、ならびに該ロールを搭載した長尺フィルムの処理装置

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WO2010122742A1 (fr) * 2009-04-22 2010-10-28 パナソニック株式会社 Appareil pour former un film mince et procédé pour former un film mince
JP2011038162A (ja) * 2009-08-13 2011-02-24 Fuji Electric Holdings Co Ltd 薄膜積層体の製造装置
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WO2009060597A1 (fr) * 2007-11-06 2009-05-14 Panasonic Corporation Appareil et méthode de formation d'un film mince
JP2010242200A (ja) * 2009-04-09 2010-10-28 Toyota Motor Corp 薄膜部材の製造装置およびその製造方法
US20100266766A1 (en) * 2009-04-21 2010-10-21 Stefan Hein Guiding devices and methods for contactless guiding of a web in a web coating process
WO2010122742A1 (fr) * 2009-04-22 2010-10-28 パナソニック株式会社 Appareil pour former un film mince et procédé pour former un film mince
JP2011038162A (ja) * 2009-08-13 2011-02-24 Fuji Electric Holdings Co Ltd 薄膜積層体の製造装置
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CN107215702A (zh) * 2017-06-09 2017-09-29 浙江汇锋薄膜科技有限公司 一种导电薄膜的制备设备上的气浮式导膜装置
CN107265152A (zh) * 2017-06-09 2017-10-20 浙江汇锋薄膜科技有限公司 一种导电薄膜的制备设备上的放料张紧装置

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