WO2014096443A1 - Procédé de dopage de substrats semi-conducteurs ainsi que substrat semi-conducteur dopé - Google Patents

Procédé de dopage de substrats semi-conducteurs ainsi que substrat semi-conducteur dopé Download PDF

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Publication number
WO2014096443A1
WO2014096443A1 PCT/EP2013/077879 EP2013077879W WO2014096443A1 WO 2014096443 A1 WO2014096443 A1 WO 2014096443A1 EP 2013077879 W EP2013077879 W EP 2013077879W WO 2014096443 A1 WO2014096443 A1 WO 2014096443A1
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WO
WIPO (PCT)
Prior art keywords
dopant
semiconductor substrate
atmosphere
boron
steps
Prior art date
Application number
PCT/EP2013/077879
Other languages
German (de)
English (en)
Inventor
Philip ROTHHARDT
Andreas Wolf
Daniel Biro
Udo Belledin
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Publication of WO2014096443A1 publication Critical patent/WO2014096443A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • borosilicide layer or boron-rich-layer (BRL).
  • BBL boron-rich-layer
  • the BRL can determine the charge carrier lifetime in the volume of the (Kessler, T. Ohrdes, B. Wolpensinger, R. Bock, and N.-P. Härder, "Characterization and Implications Often Are Boron Layer Resulting from Open Tube Liquid BBR 3 Diffusion Processes," presented at Proceedings of the 34th IEEE Photovoltaic Specialists Conference, Philadelphia, 2009).
  • a method for doping semiconductor substrates in which a) a semiconductor substrate with boron as dopant-containing
  • the present invention therefore makes use of the approach of initially at least partially allowing the formation of a borosilicide layer in the process, ie in particular of avoiding the formation of an oxide at the interface between the wafer and the doping source.
  • This allows a more homogeneous doping since high concentrations of boron in the gas phase or a solid or liquid source can be used.
  • the composition of this layer is modified later in the process by the addition of water vapor, so that the layer can then be removed easily wet-chemically and does not adversely affect the volume life.
  • the advantage of using a water vapor-containing atmosphere instead of pure dry oxidation, ie when using gaseous oxygen, is the order of magnitude higher growth rate of an oxide layer in wet processes.
  • the surface depletion of the boron doping can be reduced because both the oxidation temperature and the oxidation time can be reduced.
  • step a) in a at least one dopant-containing oxidizing atmosphere at a temperature of 300 to 1050 ° C, preferably 700 to 1000 ° C for a period of 1 to 180 min, a deposition of the dopant-containing oxide layer on the Semiconductor substrate is done.
  • an embossing position of a dopant-containing layer can take place.
  • PECVD plasma-enhanced chemical vapor deposition
  • APCVD atmospheric-pressure chemical vapor deposition
  • printing of a dopant-containing paste or ink are particularly suitable for this purpose. These allow a homogeneous dopant deposition at low cost.
  • At least one of the steps a), b) or c) is further preferred for at least one of the steps a), b) or c) to use a tube furnace or a continuous furnace.
  • step a) the gas atmosphere contains proportions of nitrogen or oxygen or mixtures thereof.
  • the dopant is preferably added in the form of BBr 3 , BCI 3 , B 2 CI 4 or B 2 H 6 of the process atmosphere.
  • a preferred embodiment provides that in step a) the concentration of boron in the oxide layer and oxygen in the atmosphere are chosen so that a borosilicide layer is at least partially formed. In contrast to a boron-rich oxide layer, the borosilicide layer can not be removed without residue using hydrofluoric acid (HF).
  • HF hydrofluoric acid
  • the water vapor is generated by means of an evaporator, a bubbler or pyrolytic.
  • the steam can be passed into the process pipe both without and with carrier gas, for example argon, oxygen or nitrogen. It is particularly preferred to use purified steam.
  • carrier gas for example argon, oxygen or nitrogen.
  • purified steam This can be realized, for example, by means of the membrane method described in US 2009/0145847 A1.
  • the supply of water vapor is preferably carried out after the occupancy phase, in particular within the 60 minutes before Pro2essende.
  • the goal is to oxidize at as low a temperature as possible in order to reduce or completely avoid the impoverishment of boron doping.
  • the maximum process temperature is reached during the occupancy time or during driving. Towards the end of the process, the temperature is then reduced. Since the wet oil preferably takes place at low temperatures, it should preferably be used at the end of the process.
  • the invention likewise provides a doped semiconductor substrate which can be produced by the method described above.
  • Semiconductor substrate preferably has a standard deviation of the sheet resistance over the wafer, measured at 40 neatly evenly distributed over the wafer points, below 3% of the absolute sheet resistance.
  • the 5-layer resistance is in the range of 50 to 100 OHM / sq.
  • Fig. L shows a schematic representation of the flow of the
  • FIG. 2 shows connection variants of an evaporator (steamer) to a tube furnace according to the present invention in plan view (FIG. 2a) and side view (Fig. 2b).
  • Printing process are deposited. In the present case, only a one-sided deposition is shown, but also a two-sided deposition of the oxide layer 2 is possible.
  • Fig. Lb the wafer is shown before the wet post-oxidation. This has a borosilicide layer 3 is formed between the wafer 1 and the oxide layer 2.
  • Fig. Lc the wafer 1 is shown after the wet in-situ post-oxidation. Between the wafer 1 and the oxide layer 2 is now the oxidized boron-rich layer 4 (BRL). This can be easily removed by wet chemical following the diffusion.
  • BBL oxidized boron-rich layer 4
  • FIG. 2 shows a preferred connection possibility of an evaporator to a tube furnace for the diffusion of BBr 3 in plan view (FIG. 2 a) and in the side view (FIG. 2 b).
  • connection 12 serves to introduce temperature sensors, the process gases are discharged via the connection 13 and the connection 14 allows the introduction of process gases.
  • the connection of a steamer can be realized, for example, via a T-piece to port 3. Alternatively, if available, an unoccupied connection can be used to introduce the steam.
  • Silicon wafers eg with a diameter of about 4 inches and a textured surface, were placed in a tube furnace. After heating to a temperature between 800 and 950 ° C various process gases, such as N 2 , 0 2 and BBr 3 fed to a drill-containing oxide layer, the so-called.
  • various process gases such as N 2 , 0 2 and BBr 3 fed to a drill-containing oxide layer, the so-called.
  • Borosilicate glass (BSG) to be deposited on the wafer (see Fig. 1).
  • BSG Borosilicate glass
  • boron diffuses into the silicon wafer. Boron concentration in the ESR and oxygen concentration are In the atmosphere, a borosilicide layer is formed on the surface of the wafer (see Fig. 2).
  • the wafers were treated under nitrogen and steam atmosphere at 950 ° C for 30 minutes. During the whole process 25sl / min water vapor was introduced (see Fig. 3). After the experiment, the wafers were immersed for 5 minutes in a 20% HF concentration bath. After the wet-chemical etching step, the wafer surface was wetted with water. Since the wafer surface was hydrophilic after removal from the bath, it could be clearly demonstrated that there was no more borosilicide layer on the surface. The procedure was analogous to MA Kessler, T.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de dopage de substrats semi-conducteurs, selon lequel un substrat semi-conducteur est pourvu d'une couche contenant une impureté de dopage, cette dernière est enfoncée dans le substrat semi-conducteur par un traitement thermique et ensuite une oxydation humide a lieu dans une atmosphère contenant de la vapeur d'eau.
PCT/EP2013/077879 2012-12-21 2013-12-23 Procédé de dopage de substrats semi-conducteurs ainsi que substrat semi-conducteur dopé WO2014096443A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012025429.6 2012-12-21
DE102012025429.6A DE102012025429A1 (de) 2012-12-21 2012-12-21 Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat

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WO2014096443A1 true WO2014096443A1 (fr) 2014-06-26

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DE (1) DE102012025429A1 (fr)
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Cited By (2)

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CN107690693A (zh) * 2015-06-09 2018-02-13 国际太阳能研究中心康斯坦茨协会 掺杂硅晶片的方法
CN114068758A (zh) * 2020-07-30 2022-02-18 一道新能源科技(衢州)有限公司 一种硼扩散处理控制方法、装置和炉管

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CN115064606A (zh) * 2022-06-16 2022-09-16 湖南红太阳光电科技有限公司 一种用于提高多晶硅层钝化效果的水汽退火设备及水汽退火工艺

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107690693A (zh) * 2015-06-09 2018-02-13 国际太阳能研究中心康斯坦茨协会 掺杂硅晶片的方法
CN107690693B (zh) * 2015-06-09 2022-01-07 国际太阳能研究中心康斯坦茨协会 掺杂硅晶片的方法
CN114068758A (zh) * 2020-07-30 2022-02-18 一道新能源科技(衢州)有限公司 一种硼扩散处理控制方法、装置和炉管
CN114068758B (zh) * 2020-07-30 2024-05-31 一道新能源科技股份有限公司 一种硼扩散处理控制方法、装置和炉管

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