WO2014096443A1 - Procédé de dopage de substrats semi-conducteurs ainsi que substrat semi-conducteur dopé - Google Patents
Procédé de dopage de substrats semi-conducteurs ainsi que substrat semi-conducteur dopé Download PDFInfo
- Publication number
- WO2014096443A1 WO2014096443A1 PCT/EP2013/077879 EP2013077879W WO2014096443A1 WO 2014096443 A1 WO2014096443 A1 WO 2014096443A1 EP 2013077879 W EP2013077879 W EP 2013077879W WO 2014096443 A1 WO2014096443 A1 WO 2014096443A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- dopant
- semiconductor substrate
- atmosphere
- boron
- steps
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 61
- 239000000758 substrate Substances 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 239000002019 doping agent Substances 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 10
- 230000003647 oxidation Effects 0.000 claims abstract description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 20
- 229910052796 boron Inorganic materials 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 150000001639 boron compounds Chemical group 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 34
- 235000012431 wafers Nutrition 0.000 description 21
- 238000009792 diffusion process Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 229910015845 BBr3 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- borosilicide layer or boron-rich-layer (BRL).
- BBL boron-rich-layer
- the BRL can determine the charge carrier lifetime in the volume of the (Kessler, T. Ohrdes, B. Wolpensinger, R. Bock, and N.-P. Härder, "Characterization and Implications Often Are Boron Layer Resulting from Open Tube Liquid BBR 3 Diffusion Processes," presented at Proceedings of the 34th IEEE Photovoltaic Specialists Conference, Philadelphia, 2009).
- a method for doping semiconductor substrates in which a) a semiconductor substrate with boron as dopant-containing
- the present invention therefore makes use of the approach of initially at least partially allowing the formation of a borosilicide layer in the process, ie in particular of avoiding the formation of an oxide at the interface between the wafer and the doping source.
- This allows a more homogeneous doping since high concentrations of boron in the gas phase or a solid or liquid source can be used.
- the composition of this layer is modified later in the process by the addition of water vapor, so that the layer can then be removed easily wet-chemically and does not adversely affect the volume life.
- the advantage of using a water vapor-containing atmosphere instead of pure dry oxidation, ie when using gaseous oxygen, is the order of magnitude higher growth rate of an oxide layer in wet processes.
- the surface depletion of the boron doping can be reduced because both the oxidation temperature and the oxidation time can be reduced.
- step a) in a at least one dopant-containing oxidizing atmosphere at a temperature of 300 to 1050 ° C, preferably 700 to 1000 ° C for a period of 1 to 180 min, a deposition of the dopant-containing oxide layer on the Semiconductor substrate is done.
- an embossing position of a dopant-containing layer can take place.
- PECVD plasma-enhanced chemical vapor deposition
- APCVD atmospheric-pressure chemical vapor deposition
- printing of a dopant-containing paste or ink are particularly suitable for this purpose. These allow a homogeneous dopant deposition at low cost.
- At least one of the steps a), b) or c) is further preferred for at least one of the steps a), b) or c) to use a tube furnace or a continuous furnace.
- step a) the gas atmosphere contains proportions of nitrogen or oxygen or mixtures thereof.
- the dopant is preferably added in the form of BBr 3 , BCI 3 , B 2 CI 4 or B 2 H 6 of the process atmosphere.
- a preferred embodiment provides that in step a) the concentration of boron in the oxide layer and oxygen in the atmosphere are chosen so that a borosilicide layer is at least partially formed. In contrast to a boron-rich oxide layer, the borosilicide layer can not be removed without residue using hydrofluoric acid (HF).
- HF hydrofluoric acid
- the water vapor is generated by means of an evaporator, a bubbler or pyrolytic.
- the steam can be passed into the process pipe both without and with carrier gas, for example argon, oxygen or nitrogen. It is particularly preferred to use purified steam.
- carrier gas for example argon, oxygen or nitrogen.
- purified steam This can be realized, for example, by means of the membrane method described in US 2009/0145847 A1.
- the supply of water vapor is preferably carried out after the occupancy phase, in particular within the 60 minutes before Pro2essende.
- the goal is to oxidize at as low a temperature as possible in order to reduce or completely avoid the impoverishment of boron doping.
- the maximum process temperature is reached during the occupancy time or during driving. Towards the end of the process, the temperature is then reduced. Since the wet oil preferably takes place at low temperatures, it should preferably be used at the end of the process.
- the invention likewise provides a doped semiconductor substrate which can be produced by the method described above.
- Semiconductor substrate preferably has a standard deviation of the sheet resistance over the wafer, measured at 40 neatly evenly distributed over the wafer points, below 3% of the absolute sheet resistance.
- the 5-layer resistance is in the range of 50 to 100 OHM / sq.
- Fig. L shows a schematic representation of the flow of the
- FIG. 2 shows connection variants of an evaporator (steamer) to a tube furnace according to the present invention in plan view (FIG. 2a) and side view (Fig. 2b).
- Printing process are deposited. In the present case, only a one-sided deposition is shown, but also a two-sided deposition of the oxide layer 2 is possible.
- Fig. Lb the wafer is shown before the wet post-oxidation. This has a borosilicide layer 3 is formed between the wafer 1 and the oxide layer 2.
- Fig. Lc the wafer 1 is shown after the wet in-situ post-oxidation. Between the wafer 1 and the oxide layer 2 is now the oxidized boron-rich layer 4 (BRL). This can be easily removed by wet chemical following the diffusion.
- BBL oxidized boron-rich layer 4
- FIG. 2 shows a preferred connection possibility of an evaporator to a tube furnace for the diffusion of BBr 3 in plan view (FIG. 2 a) and in the side view (FIG. 2 b).
- connection 12 serves to introduce temperature sensors, the process gases are discharged via the connection 13 and the connection 14 allows the introduction of process gases.
- the connection of a steamer can be realized, for example, via a T-piece to port 3. Alternatively, if available, an unoccupied connection can be used to introduce the steam.
- Silicon wafers eg with a diameter of about 4 inches and a textured surface, were placed in a tube furnace. After heating to a temperature between 800 and 950 ° C various process gases, such as N 2 , 0 2 and BBr 3 fed to a drill-containing oxide layer, the so-called.
- various process gases such as N 2 , 0 2 and BBr 3 fed to a drill-containing oxide layer, the so-called.
- Borosilicate glass (BSG) to be deposited on the wafer (see Fig. 1).
- BSG Borosilicate glass
- boron diffuses into the silicon wafer. Boron concentration in the ESR and oxygen concentration are In the atmosphere, a borosilicide layer is formed on the surface of the wafer (see Fig. 2).
- the wafers were treated under nitrogen and steam atmosphere at 950 ° C for 30 minutes. During the whole process 25sl / min water vapor was introduced (see Fig. 3). After the experiment, the wafers were immersed for 5 minutes in a 20% HF concentration bath. After the wet-chemical etching step, the wafer surface was wetted with water. Since the wafer surface was hydrophilic after removal from the bath, it could be clearly demonstrated that there was no more borosilicide layer on the surface. The procedure was analogous to MA Kessler, T.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
L'invention concerne un procédé de dopage de substrats semi-conducteurs, selon lequel un substrat semi-conducteur est pourvu d'une couche contenant une impureté de dopage, cette dernière est enfoncée dans le substrat semi-conducteur par un traitement thermique et ensuite une oxydation humide a lieu dans une atmosphère contenant de la vapeur d'eau.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012025429.6 | 2012-12-21 | ||
DE102012025429.6A DE102012025429A1 (de) | 2012-12-21 | 2012-12-21 | Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014096443A1 true WO2014096443A1 (fr) | 2014-06-26 |
Family
ID=49883109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2013/077879 WO2014096443A1 (fr) | 2012-12-21 | 2013-12-23 | Procédé de dopage de substrats semi-conducteurs ainsi que substrat semi-conducteur dopé |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE102012025429A1 (fr) |
WO (1) | WO2014096443A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107690693A (zh) * | 2015-06-09 | 2018-02-13 | 国际太阳能研究中心康斯坦茨协会 | 掺杂硅晶片的方法 |
CN114068758A (zh) * | 2020-07-30 | 2022-02-18 | 一道新能源科技(衢州)有限公司 | 一种硼扩散处理控制方法、装置和炉管 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115064606A (zh) * | 2022-06-16 | 2022-09-16 | 湖南红太阳光电科技有限公司 | 一种用于提高多晶硅层钝化效果的水汽退火设备及水汽退火工艺 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57199270A (en) * | 1981-06-02 | 1982-12-07 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
US20090145847A1 (en) * | 2005-09-13 | 2009-06-11 | Rasirc | Method of producing high purity steam |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3676231A (en) * | 1970-02-20 | 1972-07-11 | Ibm | Method for producing high performance semiconductor device |
US3806382A (en) | 1972-04-06 | 1974-04-23 | Ibm | Vapor-solid impurity diffusion process |
US7638161B2 (en) * | 2001-07-20 | 2009-12-29 | Applied Materials, Inc. | Method and apparatus for controlling dopant concentration during BPSG film deposition to reduce nitride consumption |
-
2012
- 2012-12-21 DE DE102012025429.6A patent/DE102012025429A1/de not_active Ceased
-
2013
- 2013-12-23 WO PCT/EP2013/077879 patent/WO2014096443A1/fr active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57199270A (en) * | 1981-06-02 | 1982-12-07 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
US20090145847A1 (en) * | 2005-09-13 | 2009-06-11 | Rasirc | Method of producing high purity steam |
Non-Patent Citations (6)
Title |
---|
AURIAC N ET AL: "HIGH EFFICIENCY BIFACIAL SOLAR CELL DEVELOPPED ON MONOCRISTALLINE SI AND TRANSFERED TO MULTICRISTALLINE SI", ENERGY PROCEDIA, vol. 8, 17 April 2011 (2011-04-17) - 20 April 2011 (2011-04-20), pages 427 - 434, XP028263103, ISSN: 1876-6102, [retrieved on 20110812], DOI: 10.1016/J.EGYPRO.2011.06.161 * |
BURTESCU S ET AL: "The low cost multicrystalline silicon solar cells", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 165, no. 3, 15 December 2009 (2009-12-15), pages 190 - 193, XP026777574, ISSN: 0921-5107, [retrieved on 20090831], DOI: 10.1016/J.MSEB.2009.08.009 * |
CHUNLAN ZHOU ET AL: "Paper;Preparation of p+-layers using water vapour as oxidant in BBr3 diffusion for silicon solar cells;Preparation of p+-layers using water vapour as oxidant in BBr3 diffusion for silicon solar cells", JOURNAL OF PHYSICS D: APPLIED PHYSICS, INSTITUTE OF PHYSICS PUBLISHING LTD, GB, vol. 46, no. 28, 25 June 2013 (2013-06-25), pages 285102, XP020247603, ISSN: 0022-3727, DOI: 10.1088/0022-3727/46/28/285102 * |
ENIKO BANDY ET AL: "Comparison of anisotropic etching and laser technologies applied in manufacturing of semitransparent monocrystalline solar cells", DESIGN, TEST, INTEGRATION AND PACKAGING OF MEMS/MOEMS (DTIP), 2012 SYMPOSIUM ON, IEEE, 25 April 2012 (2012-04-25), pages 32 - 36, XP032199424, ISBN: 978-1-4673-0785-7 * |
LIBAL J ET AL: "N-type multicrystalline silicon solar cells with BBr3-Diffused front junction", CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALIST CONFERENCE (IEEE CAT. NO. 05CH37608) IEEE PISCATAWAY, NJ, USA, IEEE, 3 January 2005 (2005-01-03), pages 1209 - 1212, XP010824110, ISBN: 978-0-7803-8707-2, DOI: 10.1109/PVSC.2005.1488356 * |
R. F. LEVER ET AL: "Water Vapor as an Oxidant in BBr<inf>3</inf> Open-tube Silicon Diffusion Systems", IBM JOURNAL OF RESEARCH AND DEVELOPMENT, vol. 18, no. 1, 1 January 1974 (1974-01-01), pages 40 - 46, XP055111697, ISSN: 0018-8646, DOI: 10.1147/rd.181.0040 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107690693A (zh) * | 2015-06-09 | 2018-02-13 | 国际太阳能研究中心康斯坦茨协会 | 掺杂硅晶片的方法 |
CN107690693B (zh) * | 2015-06-09 | 2022-01-07 | 国际太阳能研究中心康斯坦茨协会 | 掺杂硅晶片的方法 |
CN114068758A (zh) * | 2020-07-30 | 2022-02-18 | 一道新能源科技(衢州)有限公司 | 一种硼扩散处理控制方法、装置和炉管 |
CN114068758B (zh) * | 2020-07-30 | 2024-05-31 | 一道新能源科技股份有限公司 | 一种硼扩散处理控制方法、装置和炉管 |
Also Published As
Publication number | Publication date |
---|---|
DE102012025429A1 (de) | 2014-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2817829B1 (fr) | Procédé de fabrication d'une cellule solaire | |
EP2335275B1 (fr) | Procédé de traitement chimique d un substrat | |
EP2338179B1 (fr) | Procédé de traitement de substrats et dispositif de traitement pour mettre en oeuvre le procédé | |
EP2064750A2 (fr) | Procédé de dopage et d'oxydation simultanés de substrats semi-conducteurs et son utilisation | |
DE102009005168A1 (de) | Solarzelle und Verfahren zur Herstellung einer Solarzelle aus einem Siliziumsubstrat | |
WO1999049521A1 (fr) | Procede permettant de doper d'un seul cote un dispositif a semi-conducteur | |
WO2016107661A1 (fr) | Dopage laser de semi-conducteurs | |
DE112012002092T5 (de) | Verfahren zur Herstellung von Wafern für Solarzellen, Verfahren zur Herstellung von Solarzellen und Verfahren zur Herstellung von Solarzellenmodulen | |
WO2014096443A1 (fr) | Procédé de dopage de substrats semi-conducteurs ainsi que substrat semi-conducteur dopé | |
EP2412008A1 (fr) | Procédé de fabrication de cellules solaires à émetteur sélectif | |
WO2015117991A1 (fr) | Couche protectrice pour nacelles pecvd en graphite | |
DE102012107372B4 (de) | Alkalischer Ätzprozess und Vorrichtung zur Durchführung des Verfahrens | |
WO2008043827A2 (fr) | Procédé de passivation de cellules solaires | |
DE69906475T2 (de) | In situ wachstum von oxid und silizium schichten | |
DE102016100938A1 (de) | Steuern des Reflow-Verhaltens von BPSG-Filmen und hiermit hergestellte Vorrichtungen | |
WO2019081752A1 (fr) | Procédé de gravure à sec en 2 étapes pour la texturation de disques de silicium cristallin | |
EP2211378B1 (fr) | Procédé d'amélioration de la longévité de dispositifs de transport | |
DE2148120C3 (de) | Verfahren zum Niederschlagen von Glasfilmen | |
DE102013211746A1 (de) | Verfahren zur Herstellung einer Solarzelle | |
EP1176644A1 (fr) | Méthode d'activation de cellules solaires en CdTe à couches minces | |
WO2023094327A1 (fr) | Procédé et banc humide pour le traitement en ligne de substrats de cellules solaires | |
EP1415332A2 (fr) | Procede et dispositif de production de minces couches epitaxiales | |
DE102022104191A1 (de) | Verfahren und nassbank zur in-line-prozessierung von solarzellensubstraten | |
WO2023274784A1 (fr) | Procédé de fabrication d'une matière de départ pour une cellule solaire au silicium ayant des contacts passivés | |
DE1521834B2 (de) | Verfahren zur herstellung geschichteter halbleiter kristall elemente durch aetzen |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13814157 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 13814157 Country of ref document: EP Kind code of ref document: A1 |