DE102012025429A1 - Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat - Google Patents

Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat Download PDF

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Publication number
DE102012025429A1
DE102012025429A1 DE102012025429.6A DE102012025429A DE102012025429A1 DE 102012025429 A1 DE102012025429 A1 DE 102012025429A1 DE 102012025429 A DE102012025429 A DE 102012025429A DE 102012025429 A1 DE102012025429 A1 DE 102012025429A1
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DE
Germany
Prior art keywords
dopant
semiconductor substrate
atmosphere
boron
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102012025429.6A
Other languages
German (de)
English (en)
Inventor
Philip Rothhardt
Andreas Wolf
Daniel Biro
Udo Belledin
Christoph Wufka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority to DE102012025429.6A priority Critical patent/DE102012025429A1/de
Priority to PCT/EP2013/077879 priority patent/WO2014096443A1/fr
Publication of DE102012025429A1 publication Critical patent/DE102012025429A1/de
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
DE102012025429.6A 2012-12-21 2012-12-21 Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat Ceased DE102012025429A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE102012025429.6A DE102012025429A1 (de) 2012-12-21 2012-12-21 Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat
PCT/EP2013/077879 WO2014096443A1 (fr) 2012-12-21 2013-12-23 Procédé de dopage de substrats semi-conducteurs ainsi que substrat semi-conducteur dopé

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012025429.6A DE102012025429A1 (de) 2012-12-21 2012-12-21 Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat

Publications (1)

Publication Number Publication Date
DE102012025429A1 true DE102012025429A1 (de) 2014-06-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE102012025429.6A Ceased DE102012025429A1 (de) 2012-12-21 2012-12-21 Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat

Country Status (2)

Country Link
DE (1) DE102012025429A1 (fr)
WO (1) WO2014096443A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115064606A (zh) * 2022-06-16 2022-09-16 湖南红太阳光电科技有限公司 一种用于提高多晶硅层钝化效果的水汽退火设备及水汽退火工艺

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3104397B1 (fr) * 2015-06-09 2017-10-11 International Solar Energy Research Center Konstanz E.V. Procédé de dopage de tranches de silicium
CN114068758B (zh) * 2020-07-30 2024-05-31 一道新能源科技股份有限公司 一种硼扩散处理控制方法、装置和炉管

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676231A (en) * 1970-02-20 1972-07-11 Ibm Method for producing high performance semiconductor device
DE2316520C3 (de) 1972-04-06 1981-12-10 International Business Machines Corp., 10504 Armonk, N.Y. Verfahren zum Dotieren von Halbleiterplättchen durch Diffusion aus einer auf das Halbleitermaterial aufgebrachten Schicht
US20090145847A1 (en) 2005-09-13 2009-06-11 Rasirc Method of producing high purity steam
US7638161B2 (en) * 2001-07-20 2009-12-29 Applied Materials, Inc. Method and apparatus for controlling dopant concentration during BPSG film deposition to reduce nitride consumption

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57199270A (en) * 1981-06-02 1982-12-07 Semiconductor Energy Lab Co Ltd Photoelectric converter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676231A (en) * 1970-02-20 1972-07-11 Ibm Method for producing high performance semiconductor device
DE2316520C3 (de) 1972-04-06 1981-12-10 International Business Machines Corp., 10504 Armonk, N.Y. Verfahren zum Dotieren von Halbleiterplättchen durch Diffusion aus einer auf das Halbleitermaterial aufgebrachten Schicht
US7638161B2 (en) * 2001-07-20 2009-12-29 Applied Materials, Inc. Method and apparatus for controlling dopant concentration during BPSG film deposition to reduce nitride consumption
US20090145847A1 (en) 2005-09-13 2009-06-11 Rasirc Method of producing high purity steam

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
J. Libal, R. Petres, R. Kopecek, G. Hahn, K. Wambach, and P. Fath, "N-type multicrystalline silicon solar cells with BBr3-diffused front junction," presented at Proceedings of the 31st IEEE Photovoltaic Specialists Conference, Orland, USA, 2005
M. A. Kessler, T. Ohrdes, B. Wolpensinger, R. Bock, and N.-P. Harder, "Characterisation and implications of the boron rich layer resulting from open tube liquid BBR3 diffusion processes," presented at Proceedings of the 34th IEEE Photovoltaic Specialists Conference, Philadelphia, 2009
M. A. Kessler, T. Ohrdes, B. Wolpensinger, R. Bock, and N.-P. Harder, "Characterisation and implications oft he boron rich layer resulting from opentube liquid BBR3 diffusion processes," presented at Proceedings of the 34th IEEE Photovoltaig Specialists Conference, Philadelphia, 2009

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115064606A (zh) * 2022-06-16 2022-09-16 湖南红太阳光电科技有限公司 一种用于提高多晶硅层钝化效果的水汽退火设备及水汽退火工艺

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Publication number Publication date
WO2014096443A1 (fr) 2014-06-26

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