WO2014091970A1 - 半導体装置接続構造、超音波モジュールおよび超音波モジュールを搭載した超音波内視鏡システム - Google Patents

半導体装置接続構造、超音波モジュールおよび超音波モジュールを搭載した超音波内視鏡システム Download PDF

Info

Publication number
WO2014091970A1
WO2014091970A1 PCT/JP2013/082506 JP2013082506W WO2014091970A1 WO 2014091970 A1 WO2014091970 A1 WO 2014091970A1 JP 2013082506 W JP2013082506 W JP 2013082506W WO 2014091970 A1 WO2014091970 A1 WO 2014091970A1
Authority
WO
WIPO (PCT)
Prior art keywords
support member
semiconductor device
connection structure
ultrasonic
flexible substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/082506
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
淳也 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Corp filed Critical Olympus Corp
Priority to CN201380064710.4A priority Critical patent/CN104838671A/zh
Priority to EP13861652.9A priority patent/EP2934024A4/en
Publication of WO2014091970A1 publication Critical patent/WO2014091970A1/ja
Priority to US14/738,334 priority patent/US9997449B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
    • A61B8/12—Diagnosis using ultrasonic, sonic or infrasonic waves in body cavities or body tracts, e.g. by using catheters
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
    • A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
    • A61B8/4444—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device related to the probe
    • A61B8/445—Details of catheter construction
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
    • A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
    • A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
    • A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
    • A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
    • A61B8/4494—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer characterised by the arrangement of the transducer elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
    • B06B1/0622—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements on one surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a semiconductor device connection structure for connecting a semiconductor element and a flexible substrate, an ultrasonic module, and an ultrasonic endoscope system equipped with an ultrasonic module.
  • Patent Document 2 discloses it.
  • Patent Document 2 when an adhesive is used as a guide member, although a bonding area can be obtained by a portion extending along the back surface of the imaging device, the semiconductor penetrates the adhesive on the surface of the semiconductor element. The performance of the device may be adversely affected.
  • the present invention has been made in view of the above, and an object of the present invention is to provide a semiconductor device connection structure capable of improving the adhesive strength by a simple method without affecting the performance of the semiconductor element.
  • the semiconductor device connection structure has a plate shape, a semiconductor element having an external connection electrode on the surface, and the semiconductor element stacked on the semiconductor element And a support member having a bonding surface having a columnar shape substantially the same as the semiconductor element and having a thickness in the stacking direction greater than that of the semiconductor element, and a flexible substrate connected to the external connection electrode,
  • the flexible substrate is disposed on the side surface of the semiconductor element and the support member, and is adhered to the support member by an adhesive.
  • an adhesive reservoir is provided in the vicinity of the bonding surface of the support member to the semiconductor element.
  • the length of the side not in contact with the flexible substrate of the bonding surface of the support member is shorter than the length of the side not in contact with the flexible substrate of the semiconductor element. It is characterized by
  • an alignment mark is formed on the support member and the flexible substrate.
  • a circuit is formed on the support member.
  • the alignment mark is an electrode.
  • the support member has a hollow portion.
  • the semiconductor element is an ultrasonic transducer, and a backing material that absorbs the propagation of ultrasonic waves is disposed in a hollow portion inside the support member.
  • the ultrasonic module according to the present invention has an external connection electrode on the surface, and is laminated on a plurality of rectangular ultrasonic elements and a plurality of ultrasonic transducers arrayed in the direction orthogonal to the longitudinal direction. And a flexible substrate connected to the external connection electrode, wherein the flexible substrate is bonded to the ultrasonic element, and the flexible substrate is bonded to the ultrasonic vibration element. It is disposed on the side of the child and the support member, and is adhered to the support member by an adhesive.
  • the ultrasound endoscope system according to the present invention is characterized in that the above-mentioned ultrasound module is mounted at the distal end.
  • bonding is performed without affecting the performance of the semiconductor device by bonding the flexible substrate disposed on the side surface of the semiconductor device and the support member and the support member laminated and bonded to the semiconductor device.
  • the strength can be improved.
  • FIG. 1 is a perspective view of a semiconductor device connection structure according to a first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of the semiconductor device connection structure of FIG. 1 taken along line AA.
  • FIG. 3 is a perspective view of a semiconductor device connection structure according to a first modification of the first embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of the semiconductor device connection structure of FIG. 3 taken along the line BB.
  • FIG. 5 is a cross-sectional view of a semiconductor device connection structure according to the second modification of the first embodiment of the present invention.
  • FIG. 6 is a cross-sectional view of a semiconductor device connection structure according to Variation 3 of Embodiment 1 of the present invention.
  • FIG. 7 is a perspective view of a semiconductor device connection structure according to a second embodiment of the present invention.
  • 8 is a cross-sectional view of the semiconductor device connection structure of FIG. 7 taken along the line CC.
  • FIG. 9 is a perspective view of a semiconductor device connection structure according to a third embodiment of the present invention.
  • FIG. 10 is a perspective view showing a structure before bonding a flexible substrate of a semiconductor device connection structure according to Embodiment 3 of the present invention.
  • FIG. 11 is a cross-sectional view of the semiconductor device connection structure of FIG. 9 taken along the line DD.
  • FIG. 12 is a perspective view for explaining a semiconductor device connection structure according to a modification of the third embodiment of the present invention.
  • FIG. 13 is a perspective view of a semiconductor device connection structure according to a fourth embodiment of the present invention.
  • FIG. 14 is a cross-sectional view of the semiconductor device connection structure of FIG. 13 taken along the line EE.
  • FIG. 15 is a cross-sectional view of a semiconductor device connection structure according to a modification of the fourth embodiment of the present invention.
  • FIG. 16 is a schematic view showing a configuration of an ultrasonic transducer used in the ultrasonic module of the fifth embodiment of the present invention.
  • FIG. 17 is a perspective view schematically showing an ultrasonic module according to the fifth embodiment of the present invention.
  • FIG. 18 is an entire configuration diagram of an ultrasound endoscope system using an ultrasound module.
  • FIG. 19 is a view showing the structure of the distal end portion of the insertion portion of the ultrasonic endoscope system of FIG. 18;
  • FIG. 20 is a view showing the structure of the ultrasonic module at the tip end of FIG.
  • FIG. 1 is a perspective view of a semiconductor device connection structure according to a first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of the semiconductor device connection structure of FIG. 1 taken along line AA.
  • the semiconductor device connection structure 100 according to the first embodiment of the present invention includes a silicon substrate 1, a support member 2, and a flexible substrate 3.
  • the silicon substrate 1 has a plate shape and is provided with the external connection electrode 4 on the surface.
  • FIG. 1 shows a silicon substrate 1 having two external connection electrodes 4, the number of external connection electrodes 4 is not limited to this.
  • the silicon substrate 1 is included in the semiconductor element in the present invention.
  • the supporting member 2 is laminated on the silicon substrate 1 and bonded to the silicon substrate 1, and the bonding surface of the supporting member 2 to the silicon substrate 1 is a column having substantially the same shape as the bonding surface of the silicon substrate 1. It is.
  • the thickness in the stacking direction of the support member 2 is formed thicker than the thickness in the stacking direction of the silicon substrate 1.
  • the thickness of the support member 2 is preferably about 0.5 mm or more.
  • the support member 2 is formed of, for example, a resin or the like, and the support member 2 processed into a predetermined shape is laminated and bonded to the silicon substrate 1 with an adhesive. Alternatively, when the uncured resin is cured to form the support member 2, the resin may be adhered to the silicon substrate 1.
  • the material of the support member 2 is not limited to the resin as long as the material can ensure insulation.
  • the flexible substrate 3 has an inner lead 5 inside, and is formed by covering the inner lead 5 with a bendable insulating film 6.
  • the flexible substrate 3 is disposed on the side surface of the silicon substrate 1 and the support member 2 and is connected to the external connection electrode 4 of the silicon substrate 1 by bending the inner lead 5 not covered by the insulating film 6.
  • the connection between the inner lead 5 and the external connection electrode 4 is electrically connected by, for example, a conductive bonding material such as solder.
  • the support member 2 and the flexible substrate 3 are bonded by an adhesive 7.
  • the bonding area is increased, and the fixing strength can be improved.
  • the adhesive 7 does not go around the surface of the silicon substrate 1 and the performance of the silicon substrate 1 is affected. Absent.
  • the flexible substrate 3 is disposed on and connected to one side surface of the silicon substrate 1, but the individual flexible substrates 3 are disposed on two opposing side surfaces. , May be connected.
  • FIG. 3 is a perspective view of a semiconductor device connection structure according to a first modification of the first embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of the semiconductor device connection structure of FIG. 3 taken along the line BB.
  • the individual flexible substrates 3 are disposed on the opposite side surfaces of the silicon substrate 1A, and each flexible substrate 3 is laminated and bonded to the silicon substrate 1A. It is bonded to the side with an adhesive 7.
  • the adhesion area is increased by forming the thickness in the stacking direction of the support member 2 larger than the thickness in the stacking direction of the silicon substrate 1A. Fixing strength can be improved. Further, in the first modification, as in the first embodiment, since the adhesive 7 does not get around the surface of the silicon substrate 1A, an effect is obtained that the performance of the silicon substrate 1A is not affected.
  • FIG. 5 is a cross-sectional view of a semiconductor device connection structure according to the second modification of the first embodiment of the present invention.
  • the grooved adhesive reservoir 8 is formed on the side of the supporting member 2B in contact with the silicon substrate 1A.
  • the bonding area is increased, and the fixing strength is improved.
  • the adhesive 7 can be effectively prevented from coming around the surface of the silicon substrate 1 by forming the adhesive reservoir 8, the effect that the performance of the silicon substrate 1A is not affected is obtained. Play.
  • FIG. 6 is a cross-sectional view of a semiconductor device connection structure according to Variation 3 of Embodiment 1 of the present invention.
  • the length of the side which is not in contact with sides of length r 2 which is not in contact with the flexible board 3 of the surface to be adhered to the silicon substrate 1A of the support member 2C and the flexible substrate 3 of silicon substrate 1A r It is formed to be shorter than 1 .
  • the bonding area becomes larger and the fixing strength is improved.
  • the bonding area becomes larger and the fixing strength is improved.
  • FIG. 7 is a perspective view of a semiconductor device connection structure according to a second embodiment of the present invention.
  • FIG. 8 is a cross-sectional view of the semiconductor device connection structure of FIG. 7 taken along the line CC.
  • the semiconductor device connection structure 200 according to the second embodiment differs from the first embodiment in that an alignment mark for aligning the flexible substrate 3D is formed on the support member 2D.
  • Positioning projections 9 are formed on the support member 2D as alignment marks. Further, in the flexible substrate 3D, a positioning hole portion 10 to be fitted to the positioning protrusion 9 is formed.
  • the bonding area can be increased, and the fixing strength can be improved, and the side surface of the silicon substrate 1 and the flexible substrate Since the adhesive 7 is not adhered to the 3D, the adhesive 7 does not wrap around the surface of the silicon substrate 1 and the performance of the silicon substrate 1 is not affected. Further, by aligning and fitting the alignment projection 9 and the alignment hole 10, alignment is possible easily and connection can be easily performed. Although there is no gap between the silicon substrate 1 and the flexible substrate 3D in FIG. 8, there may be a gap between the silicon substrate 1 and the flexible substrate 3D.
  • FIG. 9 is a perspective view of a semiconductor device connection structure according to a third embodiment of the present invention.
  • FIG. 10 is a perspective view showing a structure before bonding a flexible substrate of a semiconductor device connection structure according to Embodiment 3 of the present invention.
  • FIG. 11 is a cross-sectional view of the semiconductor device connection structure of FIG. 9 taken along the line DD.
  • the semiconductor device connection structure 300 according to the third embodiment differs from the first and second embodiments in that a circuit is formed in the support member 2E.
  • the support member 2E can be made of a silicon substrate on which a circuit is formed, an MID (Molded Interconnect Device) on which a circuit is formed on a resin, a glass epoxy substrate on which a circuit is formed, a ceramic substrate, or the like.
  • MID Molded Interconnect Device
  • connection electrode 12 is connected to the connection electrode 13 formed on the flexible substrate 3E.
  • the bonding area can be increased, and the fixing strength can be improved, and the side surface of the silicon substrate 1 and the flexible substrate Since the adhesive 7 is not adhered to the surface of the silicon substrate 1, the adhesive 7 does not go around the surface of the silicon substrate 1 and the performance of the silicon substrate 1 is not affected. Furthermore, since the circuit is formed in the support member 2E, the degree of freedom in wiring is high. Moreover, since it becomes possible to mount an electronic component on the supporting member 2E, space can be used effectively and, thereby, miniaturization can also be achieved. Although there is no gap between the silicon substrate 1 and the flexible substrate 3E in FIG. 11, there may be a gap between the silicon substrate 1 and the flexible substrate 3E.
  • the alignment electrode 12A formed on the support member 2F and the alignment electrode 13A formed on the flexible substrate 3F as alignment marks alignment becomes easy, and semiconductor device connection is achieved.
  • the structure 300F can be easily manufactured.
  • FIG. 13 is a perspective view of a semiconductor device connection structure according to a fourth embodiment of the present invention.
  • FIG. 14 is a cross-sectional view of the semiconductor device connection structure of FIG. 13 taken along the line EE.
  • the supporting member 2G of the semiconductor device connecting structure 400 according to the embodiment of the present invention is different from that of the first embodiment in that the inside is hollow.
  • the semiconductor device connection structure 400 can mount the electronic component 15 and the like in the space by making the inside of the support member 2G hollow.
  • the bonding area can be increased, and the fixing strength can be improved, and the side surface of the silicon substrate 1 and the flexible substrate Since the adhesive agent 3 is not adhered, the adhesive 7 does not get around the surface of the silicon substrate 1 and the performance of the silicon substrate 1 is not affected. Furthermore, by making the inside of the support member 2G hollow, it becomes possible to mount the electronic component 15, so that space can be effectively used, and thereby downsizing can be achieved.
  • FIG. 15 is a cross-sectional view of a semiconductor device connection structure according to a first modification of the fourth embodiment of the present invention.
  • the backing material 16 is disposed on the rear surface of the ultrasonic vibration generator of the ultrasonic transducer 14.
  • the semiconductor device connection structure 400H by making the inside of the support member 2H supporting the ultrasonic transducer 14 hollow and arranging the backing material 16 in the space, it is possible to secure attenuation of necessary vibration. Since the ultrasonic characteristics are improved, it is possible to realize high-quality ultrasonic images.
  • the bonding area can be increased, and the fixing strength can be improved. Since the side surface and the flexible substrate 3 are not adhered, the mechanical deformation of the ultrasonic transducer 14 is not inhibited.
  • FIG. 16 is a schematic view showing a configuration of an ultrasonic transducer used in an ultrasonic module according to Embodiment 5 of the present invention.
  • FIG. 17 is a perspective view schematically showing an ultrasonic module according to the fifth embodiment of the present invention.
  • FIG. 17 shows only the connection structure portion of the ultrasonic module 500, and the lower portion of the ultrasonic module 500 is omitted.
  • the ultrasonic transducer 14I has a prismatic shape, and a plurality of ultrasonic transducers 14I are provided in the direction orthogonal to the longitudinal direction. It is arranged and adhered to the support member 2I. By forming the surface to which the ultrasonic transducer 14I of the support member 2I is adhered in a curved shape, the plurality of ultrasonic transducers 14I are arranged in a curved shape. Similar to the support member 2H of the fourth embodiment, the support member 2I is preferably hollow inside, and a backing material is preferably disposed inside the hollow inside.
  • External connection electrodes 4 are respectively formed at both ends of the ultrasonic transducer 14I, and the external connection electrodes 4 are connected to the inner leads 5 in the flexible substrate 3I formed in a predetermined shape.
  • the bonding area can be increased, and the fixing strength can be improved. Since the side surface and the flexible substrate 3I are not adhered, the mechanical deformation of the ultrasonic transducer 14I is not inhibited. Also, by arranging a plurality of ultrasonic transducers 14I in a prismatic shape, an ultrasonic module 500 having a desired shape can be easily manufactured.
  • the ultrasonic module 500 according to the fifth embodiment described above is provided, for example, at the tip of the ultrasonic endoscope 30 of the ultrasonic endoscope system 20 shown in FIG.
  • FIG. 18 is an entire configuration diagram of an ultrasound endoscope system using an ultrasound module.
  • FIG. 19 is a view showing the structure of the distal end portion of the insertion portion of the ultrasonic endoscope system of FIG. 18;
  • FIG. 20 is a view showing the structure of the ultrasonic module at the tip end of FIG.
  • the ultrasound endoscope system 20 shown in FIG. 18 includes an ultrasound endoscope 30, an ultrasound observation apparatus 40, and a monitor 50. Further, the ultrasonic endoscope 30 has an elongated insertion portion 60 inserted into the body, an operation portion 70 connected to the proximal end of the insertion portion 60, and a universal cord 80 extending from the side portion of the operation portion 70. And are configured.
  • a connector 81 connected to a light source device is disposed at the proximal end of the universal cord 80.
  • a cable 82 connected to the camera control unit (not shown) via the connector 82a and a cable 83 connected detachably to the ultrasonic observation apparatus 40 via the connector 83a extend It is done.
  • the ultrasound observation apparatus 40 is connected to the ultrasound endoscope 30 via the connector 83 a, and the monitor 50 is further connected via the ultrasound observation apparatus 40.
  • the insertion portion 60 is positioned from the distal end side to the distal end hard portion (hereinafter referred to as “the distal end portion”) 61, the curved portion 62 positioned at the rear end of the distal end portion 61, and the rear end of the curved portion 62
  • a main part is configured by continuously arranging a flexible tube portion 63 having a small diameter, a long length and flexibility up to the portion 70.
  • an ultrasonic module 500 ⁇ / b> A is disposed on the distal end side of the distal end portion 61.
  • the ultrasonic module 500A is an ultrasonic module according to a modification of the fifth embodiment.
  • a forceps which is a tip opening serving as a suction port, also serves as an illumination lens 66 constituting an illumination optical system, an observation lens 67 of an observation optical system,
  • the port 68 is an outlet for the treatment instrument insertion path.
  • the forceps port 68 is provided with a treatment tool elevator (not shown).
  • An operation wire (not shown) is connected to the treatment instrument raising base, and the operation wire is pulled by operating a forceps raising knob (not shown) to adjust the lead-out angle of the puncture needle 69 led out from the treatment instrument insertion path It can be done.
  • the operation unit 70 includes an angle knob 71 for controlling the bending of the bending portion 62 in a desired direction, an air / water supply button 72 for performing air supply and water supply operations, a suction button 73 for performing suction operation, and a treatment for introducing into the body
  • a treatment tool insertion port 74 which is an inlet of the tool is disposed.
  • the treatment instrument insertion port 74 is in communication with the forceps port 68 via a treatment instrument insertion channel (not shown) provided inside the insertion section 60.
  • a sheath of an ultrasonic treatment instrument (not shown) can be inserted into the treatment instrument insertion port 74. Then, by causing the puncture needle 69 inserted into the sheath to protrude from the forceps port 68, the puncture needle 69 can be disposed so as to be capable of advancing and retracting within the observation field of the ultrasonic module 500A.
  • the ultrasonic transducer array 45 of the ultrasonic module 500A has, for example, a plurality of ultrasonic transducer elements 46 having a rectangular shape in a plan view, and the long sides of these ultrasonic transducer elements 46 Are connected to each other and configured by a convex-type transducer group which is arranged in a curved shape in an arc shape. That is, in the ultrasonic transducer array 45, for example, 100 ultrasonic transducer elements 46 having a short side of 0.1 mm or less are provided in the direction of 180 degrees on the side surface of a circular arc having a radius of 5 mm.
  • the ultrasonic transducer array 45 shown in FIG. 20 adopts a convex type, it is also possible to adopt, for example, a radial type in which a two-dimensional array is provided or a linear transducer group which is not curved. .
  • the electrode terminals 41 provided at one end of each ultrasonic transducer element 46 are arranged at one end of the arc-shaped ultrasonic transducer array 45, and these electrode terminals 41 are branched from the coaxial cable bundle 47.
  • the signal lines 48 are connected to each other via a flexible substrate (FPC substrate).
  • electrode terminals 42 provided at the other end of each ultrasonic transducer element 46 are arranged at the other end of the ultrasonic transducer array 45, and these electrode terminals 42 are branched from the coaxial cable bundle 47 Are respectively connected to the ground lines 49.
  • an ultrasonic module 500A for transmitting and receiving ultrasonic waves is provided at the tip of the insertion unit 60, and the insertion unit 60 can be obtained by inserting it into the body of the subject.
  • the insertion unit 60 can be obtained by inserting it into the body of the subject.
  • the semiconductor device connection structure of the present invention is useful for a semiconductor device on which various semiconductor elements are mounted, and in particular, an endoscope system including an ultrasonic probe for observing the inside of an organ of a subject It is suitable for

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Animal Behavior & Ethology (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • General Health & Medical Sciences (AREA)
  • Surgery (AREA)
  • Molecular Biology (AREA)
  • Medical Informatics (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Biophysics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Pathology (AREA)
  • Radiology & Medical Imaging (AREA)
  • Biomedical Technology (AREA)
  • Gynecology & Obstetrics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Geometry (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Endoscopes (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Transducers For Ultrasonic Waves (AREA)
PCT/JP2013/082506 2012-12-12 2013-12-03 半導体装置接続構造、超音波モジュールおよび超音波モジュールを搭載した超音波内視鏡システム Ceased WO2014091970A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201380064710.4A CN104838671A (zh) 2012-12-12 2013-12-03 半导体器件连接构造、超声波模块以及搭载有超声波模块的超声波内视镜系统
EP13861652.9A EP2934024A4 (en) 2012-12-12 2013-12-03 CONNECTING STRUCTURE FOR A SEMICONDUCTOR COMPONENT, ULTRASOUND MODULE AND ULTRASONIC DOCKING SYSTEM WITH THE BUILT-IN ULTRASOUND MODULE
US14/738,334 US9997449B2 (en) 2012-12-12 2015-06-12 Semiconductor device connection structure, ultrasonic module, and ultrasonic endoscope system having ultrasonic module

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012271703A JP6210679B2 (ja) 2012-12-12 2012-12-12 半導体装置接続構造、超音波モジュールおよび超音波モジュールを搭載した超音波内視鏡システム
JP2012-271703 2012-12-12

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/738,334 Continuation US9997449B2 (en) 2012-12-12 2015-06-12 Semiconductor device connection structure, ultrasonic module, and ultrasonic endoscope system having ultrasonic module

Publications (1)

Publication Number Publication Date
WO2014091970A1 true WO2014091970A1 (ja) 2014-06-19

Family

ID=50934262

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/082506 Ceased WO2014091970A1 (ja) 2012-12-12 2013-12-03 半導体装置接続構造、超音波モジュールおよび超音波モジュールを搭載した超音波内視鏡システム

Country Status (5)

Country Link
US (1) US9997449B2 (enExample)
EP (1) EP2934024A4 (enExample)
JP (1) JP6210679B2 (enExample)
CN (1) CN104838671A (enExample)
WO (1) WO2014091970A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2016208631A1 (ja) * 2015-06-23 2017-07-27 オリンパス株式会社 超音波振動子および超音波プローブ
WO2022208807A1 (ja) * 2021-03-31 2022-10-06 オリンパス株式会社 超音波振動子アレイ、内視鏡および超音波振動子アレイの製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102666748B1 (ko) * 2015-11-25 2024-05-16 후지필름 소노사이트, 인크. 고주파 초음파 트랜스듀서 어레이를 포함하는 의료 기기
JP6581302B2 (ja) * 2016-05-20 2019-09-25 オリンパス株式会社 超音波振動子モジュールおよび超音波内視鏡
CN110915076B (zh) * 2017-06-21 2021-11-16 阿尔卑斯阿尔派株式会社 旋转连接器

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10201759A (ja) * 1997-01-21 1998-08-04 Olympus Optical Co Ltd 超音波プローブ
JP2004363746A (ja) * 2003-06-03 2004-12-24 Fuji Photo Film Co Ltd 超音波用探触子及びその製造方法
JP2008028462A (ja) * 2006-07-18 2008-02-07 Aloka Co Ltd 超音波探触子及びその製造方法
JP4100965B2 (ja) 2001-06-13 2008-06-11 キヤノン株式会社 半導体装置の製造方法
JP2009188802A (ja) 2008-02-07 2009-08-20 Olympus Corp 撮像モジュール
JP2010022931A (ja) * 2008-07-18 2010-02-04 Fujifilm Corp 接着剤はみ出し防止構造を有する超音波探触子
JP2011223468A (ja) * 2010-04-13 2011-11-04 Toshiba Corp 超音波トランスデューサおよび超音波プローブ

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4385255A (en) * 1979-11-02 1983-05-24 Yokogawa Electric Works, Ltd. Linear array ultrasonic transducer
CA2139151A1 (en) * 1994-01-14 1995-07-15 Amin M. Hanafy Two-dimensional acoustic array and method for the manufacture thereof
JP3628048B2 (ja) * 1994-09-08 2005-03-09 株式会社日立メディコ 超音波探触子
US5810009A (en) * 1994-09-27 1998-09-22 Kabushiki Kaisha Toshiba Ultrasonic probe, ultrasonic probe device having the ultrasonic probe, and method of manufacturing the ultrasonic probe
NL1014175C2 (nl) * 2000-01-25 2001-07-26 Oldelft B V Ultrageluid probe.
US6788620B2 (en) * 2002-05-15 2004-09-07 Matsushita Electric Industrial Co Ltd Acoustic matching member, ultrasound transducer, ultrasonic flowmeter and method for manufacturing the same
US6994674B2 (en) * 2002-06-27 2006-02-07 Siemens Medical Solutions Usa, Inc. Multi-dimensional transducer arrays and method of manufacture
US20050225210A1 (en) * 2004-04-01 2005-10-13 Siemens Medical Solutions Usa, Inc. Z-axis electrical connection and methods for ultrasound transducers
US20070187844A1 (en) * 2006-02-10 2007-08-16 Wintec Industries, Inc. Electronic assembly with detachable components
US7449821B2 (en) * 2005-03-02 2008-11-11 Research Triangle Institute Piezoelectric micromachined ultrasonic transducer with air-backed cavities
JP2007068918A (ja) * 2005-09-09 2007-03-22 Fujifilm Corp 超音波プローブ、および超音波診断装置
JP5355452B2 (ja) * 2010-03-02 2013-11-27 富士フイルム株式会社 超音波診断装置
JP6205704B2 (ja) * 2012-10-25 2017-10-04 セイコーエプソン株式会社 超音波測定装置、ヘッドユニット、プローブ及び診断装置
CN106105407A (zh) * 2014-03-20 2016-11-09 奥林巴斯株式会社 缆线连接构造和内窥镜装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10201759A (ja) * 1997-01-21 1998-08-04 Olympus Optical Co Ltd 超音波プローブ
JP4100965B2 (ja) 2001-06-13 2008-06-11 キヤノン株式会社 半導体装置の製造方法
JP2004363746A (ja) * 2003-06-03 2004-12-24 Fuji Photo Film Co Ltd 超音波用探触子及びその製造方法
JP2008028462A (ja) * 2006-07-18 2008-02-07 Aloka Co Ltd 超音波探触子及びその製造方法
JP2009188802A (ja) 2008-02-07 2009-08-20 Olympus Corp 撮像モジュール
JP2010022931A (ja) * 2008-07-18 2010-02-04 Fujifilm Corp 接着剤はみ出し防止構造を有する超音波探触子
JP2011223468A (ja) * 2010-04-13 2011-11-04 Toshiba Corp 超音波トランスデューサおよび超音波プローブ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2934024A4

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2016208631A1 (ja) * 2015-06-23 2017-07-27 オリンパス株式会社 超音波振動子および超音波プローブ
WO2022208807A1 (ja) * 2021-03-31 2022-10-06 オリンパス株式会社 超音波振動子アレイ、内視鏡および超音波振動子アレイの製造方法

Also Published As

Publication number Publication date
JP6210679B2 (ja) 2017-10-11
US9997449B2 (en) 2018-06-12
EP2934024A1 (en) 2015-10-21
US20150279764A1 (en) 2015-10-01
EP2934024A4 (en) 2016-08-03
CN104838671A (zh) 2015-08-12
JP2014116904A (ja) 2014-06-26

Similar Documents

Publication Publication Date Title
JP6542198B2 (ja) ケーブル接続構造および内視鏡装置
CN101466314B (zh) 超声波探针以及具有超声波探针的超声波内窥镜
CN105451664B (zh) 超声波内窥镜顶端部
US11696743B2 (en) Ultrasonic oscillator unit having electrode part provided in ultrasonic oscillator, three or more connectors, and three or more electrode wiring boards mounted to three or more connectors and electrically connected to electrode part
CN106061365A (zh) 固体摄像装置及具有该固体摄像装置的电子内窥镜
JP5973761B2 (ja) ケーブル接続構造
WO2010150825A1 (ja) 撮像ユニット
JP5964003B1 (ja) 撮像ユニット、撮像モジュールおよび内視鏡システム
US11730450B2 (en) Ultrasonic oscillator unit and ultrasonic endoscope using same
JP6307697B1 (ja) 電子回路ユニット、撮像ユニット、撮像モジュールおよび内視鏡
JP6210679B2 (ja) 半導体装置接続構造、超音波モジュールおよび超音波モジュールを搭載した超音波内視鏡システム
US11160530B2 (en) Ultrasonic transducer module, ultrasonic endoscope and processing method of ultrasonic transducer module
WO2021181530A1 (ja) 内視鏡、内視鏡の先端枠部材および内視鏡の挿入部
JP6099541B2 (ja) 内視鏡及び内視鏡の製造方法
WO2018021061A1 (ja) 撮像ユニットおよび内視鏡
US9919343B2 (en) Ultrasound transducer and ultrasound endoscope
JP2016163769A (ja) ケーブル接続構造、超音波探触子および超音波内視鏡システム
JP4388485B2 (ja) 電子ラジアル型超音波内視鏡
US20230346348A1 (en) Ultrasound transducer array, endoscope, and manufacturing method of ultrasound transducer array
WO2022137446A1 (ja) 基板の接続構造および超音波診断装置
JP2015080633A (ja) 電気ユニット及び電気ユニットを用いた内視鏡装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13861652

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2013861652

Country of ref document: EP