WO2014082403A1 - 一种气液两相雾化清洗装置及清洗方法 - Google Patents

一种气液两相雾化清洗装置及清洗方法 Download PDF

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Publication number
WO2014082403A1
WO2014082403A1 PCT/CN2013/073574 CN2013073574W WO2014082403A1 WO 2014082403 A1 WO2014082403 A1 WO 2014082403A1 CN 2013073574 W CN2013073574 W CN 2013073574W WO 2014082403 A1 WO2014082403 A1 WO 2014082403A1
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WIPO (PCT)
Prior art keywords
liquid
gas
phase
conduit
nozzle
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PCT/CN2013/073574
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English (en)
French (fr)
Inventor
苏宇佳
吴仪
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北京七星华创电子股份有限公司
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Application filed by 北京七星华创电子股份有限公司 filed Critical 北京七星华创电子股份有限公司
Priority to US14/127,973 priority Critical patent/US9460943B2/en
Publication of WO2014082403A1 publication Critical patent/WO2014082403A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the present invention relates to the field of semiconductor wafer processing technology, and in particular to a gas-liquid two-phase mist cleaning apparatus and a cleaning method. Background technique
  • the material is taken away to achieve the cleaning effect, but the transfer of impurities and pollutants to the liquid phase fluid body is poor in the conventional process, affecting the efficiency and effect of cleaning, and improving the transfer of impurities and pollutants into the liquid phase in the groove. It can improve cleaning efficiency and cleaning effect.
  • nanojet technology In order to reduce the damage to the graphics, nanojet technology is now being studied, that is, the fluid that is ejected is foggy and consists of many nanoscale droplets.
  • the droplets ejected from the nozzle fall on the surface of the wafer to wash away impurities and contaminants on the patterned structure on the surface of the wafer.
  • nanojet technology can reduce the damage to the pattern to a certain extent, but the sprayed droplets of nanodroplets are also sprayed onto the wafer at a relatively high speed.
  • These high-speed nanodroplets are in direct contact with the pattern, and because of the small droplet size, it is easier to enter the feature size of the wafer. Internally, it may cause deeper damage, and the injected fluid does not fall vertically onto the wafer, so the obliquely incident fluid will cause more damage to the sidewalls and corners of the pattern.
  • Another object of the present invention is to provide a cleaning method based on the gas-liquid two-phase atomizing cleaning apparatus.
  • the gas-liquid two-phase atomization cleaning device comprises a gas-liquid two-phase atomizing nozzle, wherein the gas-liquid two-phase atomizing nozzle is a double-layer jacket structure, comprising a nozzle, a rotating arm, a gas conduit, a liquid conduit, and a The nozzle is coupled to the rotating arm, the gas conduit and the liquid conduit are fixed to the rotating arm, and the gas conduit and the liquid conduit are each provided with a pneumatic valve.
  • the nozzle is integral with the rotating arm or connected by a spiral structure or a ferrule structure.
  • the rotating arm is a hollow structure.
  • liquid conduit is located inside the rotating arm.
  • one pneumatic valve is provided on the liquid conduit.
  • gas conduit is located inside the rotating arm.
  • one pneumatic valve is provided on the gas conduit.
  • the nozzle comprises a central conduit and an outer sleeve, the central conduit is connected to the liquid conduit or the outlet end of the liquid conduit is fixed directly as a central conduit; the outer sleeve is connected to the gas conduit.
  • the nozzle structure is required to ensure good sealing.
  • the central pipeline is a liquid phase fluid, which may be a chemical liquid or ultrapure water.
  • the outer sleeve is a gas phase, and may be N 2 , C0 2 or the like.
  • the gas-liquid two-phase atomization cleaning device further includes a flow control device for the liquid phase fluid, the flow rate control device of the liquid phase fluid is connected to the liquid inlet end of the liquid conduit, and the flow control of the liquid phase fluid
  • the device is a parallel structure, comprising a liquid supply end pipeline, a first branch pipeline, a second branch pipeline and a connection nozzle end, wherein the liquid supply end pipeline is provided with a needle valve, a pneumatic valve is connected in series, and then two parallel connections are connected.
  • Branch pipe a pneumatic valve is arranged in the first branch pipe for liquid supply in the liquid phase process; the second branch pipe is connected in series with a needle valve and a pneumatic valve for gas-liquid two-phase process supply, two
  • the branch pipelines merge into one pipeline, which is connected to the nozzle end and is provided with a suction valve.
  • the pneumatic valve for controlling the two parallel branch pipes upstream of the liquid supply end line is closed, the pneumatic valve on the gas pipe is opened, and the N 2 in the outer casing can be opened.
  • N 2 process arm That is, the function of the N 2 process arm can be exerted, and therefore, the present invention can omit the N 2 process arm of the conventional process.
  • the present invention also provides a cleaning method based on the gas-liquid two-phase atomizing cleaning device, which is divided into the following two cases.
  • the cleaning method is: the gas-liquid two-phase atomization cleaning device is used in the cleaning process
  • the pneumatic valve of the gas conduit of the gas-liquid two-phase atomizing nozzle is closed, and the pneumatic valve of the liquid conduit is opened; when the gas-liquid two-phase process is used, At the same time, the pneumatic valve of the gas conduit and the liquid conduit is opened.
  • the gas in the outer sleeve When the gas and liquid are the same, the gas in the outer sleeve generates a circumferential shearing action with respect to the liquid phase in the central pipeline, which can promote the atomization of the liquid in the central pipeline, and the kinetic energy increases.
  • the flow rate of the liquid phase fluid is controlled to a small value, that is, the purpose of reducing the impact of the fluid on the wafer and conserving the liquid phase fluid can be achieved.
  • the mist-like fluid ejected in the nozzle rinses the surface of the wafer to form a surface layer of the wafer surface, which increases the physical force perpendicular to the groove of the wafer and promotes the transfer of impurities and contaminants into the mist-like fluid in the trench. Improve the efficiency and effectiveness of cleaning.
  • the nozzle enters from the edge of one end of the wafer, and is rinsed in a single-liquid phase process until it passes through the center of the wafer, and is replaced by a gas-liquid two-phase process jet rinsing to drive impurities and contaminants in the wafer trench to the edge of the wafer.
  • the nozzle reaches the edge of the other end of the wafer, and is replaced by a single-liquid phase process.
  • the nozzle After the nozzle returns to the center of the wafer, it is replaced by a gas-liquid two-phase process jet flushing, reaching the edge of the wafer again, and changing to a single
  • the liquid phase process is rinsed, and the cleaning is performed in such a reciprocating manner.
  • the cleaning method is:
  • the gas-liquid two-phase atomization cleaning device of the present invention is provided by a flow control device for a liquid phase fluid
  • a flow control device for a liquid phase fluid By lowering the liquid phase flow rate, the impact force on the surface structure of the wafer is small due to the small mass of the atomized fluid, and the protective pattern structure is not damaged.
  • the gas-liquid two-phase atomization cleaning device of the present invention in the cleaning process, the gas-liquid two-phase and single-liquid phase alternate processes are adopted, wherein the liquid flow rate is controlled by the flow control device of the liquid phase fluid:
  • the second branch line pneumatic valve of the flow control device In the single liquid phase process, the second branch line pneumatic valve of the flow control device is closed, the first branch line pneumatic valve is opened, the flow rate is controlled by the needle valve of the liquid supply end line, and the gas-liquid two-phase atomization
  • the pneumatic valve of the gas conduit of the nozzle is closed, and the pneumatic valve of the liquid conduit is opened; when the gas-liquid two-phase process is used, the flow rate of the liquid phase fluid is reduced to an appropriate value, and the mist fluid is adjusted by controlling the liquid phase flow, the flow rate control
  • the pneumatic valve of the first branch line of the device is closed, the second branch line pneumatic valve and the needle valve are opened, the flow rate is controlled by the needle valve of the second branch line, and the gas-
  • the nozzle enters from the edge of one end of the wafer, and is rinsed in a single-liquid phase process until it passes through the center of the wafer, and is replaced by a gas-liquid two-phase process jet rinsing to drive the surface impurities and contaminants on the wafer edge to the wafer. At the other end edge, it is replaced by a single-liquid phase process.
  • the nozzle After the nozzle returns to the center of the wafer, it is replaced by a gas-liquid two-phase process jet flushing, and then reaches the edge of the wafer again, and is replaced by a single-liquid phase process, so that it is washed back and forth.
  • the gas-liquid two-phase atomizing cleaning device of the present invention comprises a gas-liquid two-phase atomizing nozzle, wherein a gas-liquid two-phase alternating with a single liquid phase is used in the cleaning process, and a groove perpendicular to the wafer is added in the process.
  • the physical force promotes the transfer of impurities and contaminants in the groove of the wafer to the liquid body of the liquid phase, which improves the efficiency and effect of cleaning, and at the same time, contributes to the saving of the liquid phase fluid.
  • the present invention reduces the liquid phase flow rate by the flow control device of the liquid phase fluid, and rinses the surface of the wafer with the atomizing fluid. Due to the small mass of the atomizing fluid, the impact force on the surface structure of the wafer is small, and the wafer is reduced. damage.
  • the gas-liquid two-phase atomizing cleaning device of the present invention alternates between a liquid phase and a gas-liquid two-phase process in a cleaning process, which not only helps to maintain the liquid film thickness on the surface of the wafer, but also promotes the surface liquid film. Disturbance is conducive to the transfer.
  • the invention is reduced from the traditional chemical liquid arm, the ultrapure water arm and the N 2 arm to the chemical liquid arm and the ultrapure water arm.
  • FIG. 1 is a schematic view showing the structure of a gas-liquid two-phase atomizing cleaning device according to an embodiment of the present invention.
  • FIG. 2 is a schematic view showing the structure of a flow control device for a liquid phase fluid according to an embodiment of the present invention.
  • Figure 3 is a schematic illustration of the hoop shearing action of the gas in the outer casing of the nozzle relative to the liquid phase in the central conduit.
  • FIG. 4 is a schematic view showing the surface of a wafer during cleaning of the apparatus of the embodiment of the present invention.
  • Fig. 5 is a schematic view showing an alternate process of gas-liquid two-phase and single-liquid phase according to an embodiment of the present invention.
  • 1 rotating arm; 2: gas conduit; 3: liquid conduit; 4: nozzle; 5: central conduit; 6: outer casing; 7: pneumatic valve on liquid conduit; 8: gas conduit Pneumatic valve; 9: supply end line; 10: supply end line needle valve; 11: supply end line pneumatic valve; 12: first branch valve; 16: second branch line pneumatic valve; 17: Connection nozzle end; 18: suckback valve; 19: misty fluid; 20: wafer surface level; 21: wafer pattern structure; 22: impurities and contaminants in the wafer groove; 51: liquid phase in the center line 61: gas phase in the outer casing; 23: nozzle movement trajectory; 24: wafer; 25: gas-liquid two-phase process from the center of the wafer to the edge of the wafer; 26: single-liquid phase process from the edge of the wafer to the center of the wafer .
  • the gas-liquid two-phase atomization cleaning device of the present invention comprises a gas-liquid two-phase atomizing nozzle, and the gas-liquid two-phase atomizing nozzle is a double-layer jacket structure, including a nozzle 4 and a rotating arm 1. a gas conduit 2, a liquid conduit 3, the nozzle 4 being connected to the rotating arm 1, the gas conduit 2 and the liquid conduit 3 being solid Set on the rotating arm 1.
  • the nozzle 4 is integral with the rotating arm 1 or connected in a spiral structure or in a ferrule structure.
  • the rotating arm 1 is a hollow structure.
  • the liquid conduit 3 is located inside the rotating arm 1; the liquid conduit 3 is provided with a pneumatic valve 7.
  • the gas conduit 2 is located inside the rotating arm 1; the gas conduit 2 is provided with a pneumatic valve 8.
  • the nozzle 4 comprises a central line 5 and an outer sleeve 6, the central line 5 is connected to the liquid conduit 3 or the outlet end of the liquid conduit 3 is fixed directly as a central line 5; Connected to the gas conduit 2.
  • the nozzle 4 is structured to ensure good sealing.
  • the central conduit 5 is a liquid phase fluid, which may be a chemical liquid or ultrapure water.
  • the outer sleeve 6 is a gas phase, and may be N 2 , C0 2 or the like.
  • the gas-liquid two-phase atomization cleaning device of the present invention further includes a flow control device for the liquid phase fluid, and the flow rate control device of the liquid phase fluid is connected to the liquid inlet end of the liquid conduit 3, as shown in FIG.
  • the fluid flow control device is a parallel structure, including a liquid supply end line 9, a first branch line 12, a second branch line 14 and a connection nozzle end 17, and the liquid supply end line 9 is provided with a liquid supply end tube
  • the needle valve 10, a liquid supply end line pneumatic valve 11 is connected in series, and then two parallel branch lines are connected, and a first branch line pneumatic valve 13 is arranged in the first branch line 12 for the liquid phase process.
  • the second branch line 14 is sequentially connected in series with a second branch line needle valve 15 and a second branch line needle valve 16 for gas-liquid two-phase process supply, and the two branch lines are combined into one line.
  • a suction valve 18 is provided in order to connect the nozzle end 17, a suction valve 18 is provided.
  • N 2 in the middle can be used as an N 2 process arm. That is, the function of the N 2 process arm can be exerted, and therefore, the present invention can omit the N 2 process arm of the conventional process.
  • the gas-liquid two-phase atomizing cleaning device does not include a flow control device for liquid phase fluid
  • the cleaning method is as follows: the gas-liquid two-phase atomization cleaning device adopts a process of alternating gas-liquid two-phase and single-liquid phase, as shown in FIG. 1 , when using a single-liquid phase process, the gas-liquid two-phase atomizing nozzle Pneumatic valve of gas conduit 2
  • the pneumatic valve 8 of the gas conduit 2 and the pneumatic valve 7 of the liquid conduit 3 are simultaneously opened.
  • the gas phase 61 in the outer sleeve 6 is opposite to the central conduit.
  • the liquid phase 51 in 5 generates a circumferential shearing action, which causes the liquid phase 51 in the central conduit 5 to be atomized, the kinetic energy is increased, the physical force perpendicular to the groove of the wafer is increased, and the groove of the wafer is strengthened.
  • the impact can accelerate the diffusion and transfer of liquid phase fluids of impurities and contaminants in the groove of the wafer, improve the efficiency and effect of cleaning, and at the same time, help to save liquid phase fluid.
  • the mist-like fluid 19 sprayed in the nozzle 4 rinses the surface of the wafer to form a wafer surface level 20, which adds physical force perpendicular to the wafer trenches, promoting impurities in the trenches of the wafer.
  • the transfer of contaminants 22 to the misty fluid 19 enhances the efficiency and effectiveness of the cleaning. Controlling the flow rate of the liquid phase fluid to a small value achieves the purpose of reducing the impact of the fluid on the wafer pattern structure 21 and conserving the liquid phase fluid.
  • the cleaning method of the present invention uses a gas-liquid two-phase process 25 from the center of the wafer to the edge of the wafer and a single liquid phase process 26 from the edge of the wafer to the center of the wafer.
  • the problem that the atomized droplets are easily dried on the surface of the wafer 24 to form a water mark is avoided, wherein when the cleaning is started, the nozzle 4 enters from the end edge of the wafer 24, and is rinsed by the single liquid phase process 26 until passing through the wafer 24.
  • the center is replaced by a gas-liquid two-phase process 25 spray rinsing to drive impurities and contaminants in the trenches of the wafer 24 to the edge of the wafer 24, and the nozzle 4 reaches the other end edge of the wafer 24, and is again replaced by a single-liquid phase process 26, After the nozzle 4 returns to the center of the wafer 24, it is replaced by a gas-liquid two-phase process 25 to spray flush, and again reaches the edge of the wafer 24, and is replaced by a single-liquid phase process 26, so that the cleaning is repeated.
  • the cleaning method is:
  • the present invention reduces the liquid phase flow rate by a flow control device for the liquid phase fluid, because the atomization fluid has a small mass The impact on the wafer pattern structure is small, and the damage to the wafer is reduced.
  • the gas-liquid two-phase atomizing cleaning device of the present invention in the cleaning process, the gas-liquid two-phase and single-liquid phase alternate processes are adopted, wherein the liquid flow rate in the central pipe 5 passes through the flow control device of the liquid phase fluid To control: As shown in FIG.
  • the pneumatic valve 16 of the second branch line 14 of the flow control device is closed, and the pneumatic valve 13 of the first branch line 12 is opened, and the flow is supplied.
  • the needle valve 10 of the liquid end line 9 is controlled, the pneumatic valve 8 of the gas conduit 2 of the gas-liquid two-phase atomizing nozzle is closed, the pneumatic valve 7 of the liquid conduit 3 is opened, and the liquid phase is used for the gas-liquid two-phase process.
  • the flow rate of the fluid is reduced to an appropriate value, the mist fluid is adjusted by controlling the liquid phase flow, the pneumatic valve 13 of the first branch line 12 of the flow control device is closed, the pneumatic valve 16 of the second branch line 14 and the needle valve 15 is opened, the flow is controlled by the needle valve 15 of the second branch line 14, and at the same time, the pneumatic valve 8 of the gas-liquid two-phase atomizing nozzle gas conduit 2 and the pneumatic valve 7 of the liquid conduit 3 are opened, and the outer sleeve is opened. N 2 in 6.
  • the cleaning method of the present invention uses a gas-liquid two-phase process 25 from the center of the wafer to the edge of the wafer and a single liquid phase process 26 from the edge of the wafer to the center of the wafer.
  • the problem that the atomized droplets are easily dried on the surface of the wafer 24 to form a water mark is avoided, wherein when the cleaning is started, the nozzle 4 enters from the end edge of the wafer 24, and is rinsed by the single liquid phase process 26 until passing through the wafer 24.
  • the center is replaced by a gas-liquid two-phase process 25 spray rinsing to drive impurities and contaminants in the trenches of the wafer 24 to the edge of the wafer 24, and the nozzle 4 reaches the other end edge of the wafer 24, and is again replaced by a single-liquid phase process 26, After the nozzle 4 returns to the center of the wafer 24, it is replaced by a gas-liquid two-phase process 25 to spray flush, and again reaches the edge of the wafer 24, and is replaced by a single-liquid phase process 26, so that the cleaning is repeated.
  • the present invention reduces the liquid phase flow rate by the flow control device of the liquid phase fluid, and washes the surface of the wafer with the atomized fluid. Since the mass of the atomized fluid is small, the impact force on the surface structure of the wafer is small, and the damage to the wafer is reduced. In the present invention, the high kinetic energy gas-liquid two-phase fluid is pushed toward the edge by the center of the wafer, which is advantageous for carrying impurities and contaminants out of the wafer surface, and at the same time reducing the contamination caused by droplet sputtering.
  • the gas-liquid two-phase atomization cleaning device of the invention alternates between the liquid phase and the gas-liquid two-phase process in the cleaning process, which not only helps to maintain the liquid film thickness on the surface of the wafer, but also promotes the disturbance of the surface liquid film. Conducive to the progress of the transfer.
  • the above cleaning method can be implemented by the above gas-liquid two-phase atomizing cleaning device or a similar structure device.
  • the above embodiments are merely illustrative of the preferred embodiments of the present invention, and are not intended to limit the scope of the present invention, and various modifications made by those skilled in the art to the technical solutions of the present invention without departing from the spirit of the invention. And improvements are intended to fall within the scope of protection defined by the claims of the invention.
  • the invention discloses a gas-liquid two-phase atomization cleaning device, the device comprises a gas-liquid two-phase atomizing nozzle, the gas-liquid two-phase atomizing nozzle is a double-layer jacket structure, comprising a nozzle, a rotating arm and a gas a conduit, a liquid conduit, the nozzle is coupled to the rotating arm, the gas conduit and the liquid conduit are fixed to the rotating arm, and the gas conduit and the liquid conduit are each provided with a pneumatic valve.
  • the present invention also provides a cleaning method based on the gas-liquid two-phase atomizing cleaning device.
  • the gas-liquid two-phase atomization cleaning device of the invention increases the physical force perpendicular to the groove of the wafer during the cleaning process, promotes the transfer of impurities and contaminants in the groove of the wafer to the liquid body of the liquid phase, and improves the efficiency and effect of cleaning. , which reduces damage to the wafer and has industrial applicability.

Abstract

一种气液两相雾化清洗装置，包括气液两相雾化喷头，气液两相雾化喷头为双层夹套结构，包括喷嘴（4）、旋转臂（1）、气体导管（2）和液体导管（3）。喷嘴（4）与旋转臂（1）连接，气体导管（2）和液体导管（3）固定在旋转臂上（1）。气体导管（2）和液体导管（3）上均设有气动阀。还包括基于该气液两相雾化清洗装置的清洗方法。该清洗装置在清洗过程中增加了垂直于晶片沟槽的物理力，促进晶片沟槽中杂质和污染物向液相流体主体的传递，提高了清洗的效率和效果；该装置采用雾化流体冲洗晶片表面，减少了对晶片的破坏。

Description

一种气液两相雾化清洗装置及清洗方法
技术领域
本发明涉及半导体晶片工艺技术领域， 具体地说， 涉及一种气液两相雾 化清洗装置及清洗方法。 背景技术
随着集成电路特征尺寸进入到深亚微米阶段， 集成电路晶片制造工艺中 所要求的晶片表面的洁净度越来越苛刻， 为了保证晶片材料表面的洁净度， 集成电路的制造工艺中存在数百道清洗工序， 清洗工序占了整个制造过程的
30 %。
进一步地统计显示， 整个半导体器件制造中超过 50 %的损失量都是由表 面污染、 清洗不彻底造成的。 在清洗过程中， 液相流体由位于晶片上方的喷 头喷射于晶片上， 喷射的液相以很高的流量冲击晶片时， 将产生一个物理作 用力。 晶片表面沟槽中的杂质和污染物被液相流体腐蚀， 溶解或悬浮于液相 流体中， 高速的冲击力及下方晶片的转动产生的离心力使液相流体离开晶片 表面， 同时将杂质和污染物带走， 从而达到清洗效果， 但是传统的工艺中杂 质和污染物向液相流体主体的传递较差， 影响了清洗的效率和效果， 改善沟 槽中杂质和污染物向液相流体的传递可以提高清洗效率和清洗效果。
但是随着晶片图形的尺寸越来越小， 高速喷射流体对图形的损害不能忽 视。传统的清洗喷射技术存在大尺寸液滴或是喷射流， 对 65 纳米及其以下工 艺的晶片表面的图形的损伤越显严重， 同时液相流体的利用率较低， 导致资 源的极度浪费。
为了减少对图形的损害， 现在都在研究纳米喷射技术， 即喷射出来的流 体是雾状的， 由许许多多的纳米级的液滴组成。 喷头喷出的液滴， 落在晶片 表面， 将晶片表面的图形结构上的杂质和污染物清洗掉。 相比大液滴或连续 的流体而言， 纳米喷射技术的确能从一定程度上减小对图形的损害， 但是喷 射出来的雾状纳米液滴同样是以比较高的速度喷射到晶片上， 如果这些高速 的纳米液滴直接与图形接触， 由于液滴尺寸小， 更容易进入晶片特征尺寸的 内部， 可能会造成更深层次的损伤， 并且喷射下来的流体并不都是垂直喷射 落到晶片上的，这样斜入射的流体又会对图形的侧壁和边角造成更大的损伤。
因此， 促进杂质和污染物向液相流体主体的传递、 减小雾化流体对晶片 的破坏是现在亟待解决的问题。 发明内容
针对现有技术的不足之处， 本发明的一个目的是提供一种气液两相雾化 清洗装置。
本发明的另一目的是提供一种基于所述气液两相雾化清洗装置的清洗方 法。
本发明目的通过下述技术方案来实现：
本发明提供的气液两相雾化清洗装置包括气液两相雾化喷头， 所述气液 两相雾化喷头为双层夹套结构， 包括喷嘴、 旋转臂、 气体导管、 液体导管， 所述喷嘴与旋转臂连接， 所述气体导管和液体导管固定在旋转臂上， 且气体 导管和液体导管上均设有气动阀。
其中，所述喷嘴与旋转臂是一体的或以螺旋结构或以卡套结构方式连接。 其中， 所述旋转臂为中空结构。
其中， 所述液体导管位于旋转臂内部。
其中， 液体导管上设有的气动阀为一个。
其中， 所述气体导管位于旋转臂内部。
其中， 气体导管上设有的气动阀为一个。
其中， 所述喷嘴包括中心管路和外层套管， 所述中心管路与液体导管相 连或者液体导管出口端固定直接作为中心管路； 所述外层套管与气体导管相 连。
其中， 所述喷嘴结构要保证 好的密封性。
其中， 所述中心管路中是液相流体， 可以是化学药液或超纯水等。
其中， 所述外层套管中是气相， 可以是 N2、 C02等。
所述气液两相雾化清洗装置还包括液相流体的流量控制装置， 所述液相 流体的流量控制装置与液体导管的进液一端相连， 所述液相流体的流量控制 装置为并联结构， 包括供液端管路、 第一分支管路、 第二分支管路和连接喷 头端， 所述供液端管路设置一个针阀， 串联一个气动阀， 之后连接两个并联 分支管路， 在第一分支管路设置一个气动阀， 用于液相工艺的供液； 第二分 支管路依次串联一个针阀和一个气动阀， 用于气液两相工艺供液， 两分支管 路汇合成一条管路,为连接喷头端， 并设置回吸阀。
在保证回吸阀稳定工作的条件下， 同时关闭供液端管路上游的控制两条 并联分支管路的气动阀， 开启气体导管上的气动阀， 开启外层套管中的 N2 能够作为 N2工艺臂。 即， 可发挥 N2工艺臂的功能， 因此， 本发明可以省去 传统工艺的 N2工艺臂。
本发明还提供了一种基于所述气液两相雾化清洗装置的清洗方法， 所述 清洗方法分为以下两种情况。
( 1 ) 当所述气液两相雾化清洗装置不包括液相流体的流量控制装置时, 所述清洗方法为： 所述的气液两相雾化清洗装置在清洗过程中， 釆用气液两 相与单液相交替的工艺， 釆用单液相工艺时， 气液两相雾化喷头的气体导管 的气动阀关闭， 液体导管的气动阀开启； 釆用气液两相工艺时， 同时开启气 体导管和液体导管的气动阀。
当气液两相同时开启时， 所述外层套管中的气相对所述中心管路中的液 相产生环向剪切作用， 可促使所述中心管路中的液体雾化， 动能增大， 增加 了垂直于晶片沟槽的物理力， 加强了对晶片沟槽的冲击， 可加快晶片沟槽中 杂质和污染物的液相流体的扩散和传递。 将液相流体的流量控制在一个较小 值， 即能达到减小流体对晶片的冲击和节约液相流体的目的。
喷嘴中喷射的雾状流体冲洗晶片表面， 形成了一层晶片表层液面， 该过 程中增加了垂直于晶片沟槽的物理力， 促进晶片沟槽中杂质和污染物向雾状 流体的传递， 提高了清洗的效率和效果。
开始清洗时， 喷嘴从晶片一端边缘进入， 釆用单液相工艺冲洗， 直到经 过晶片中心， 换为气液两相工艺喷射冲洗， 将晶片沟槽中的杂质和污染物赶 到晶片边缘， 待喷嘴到达晶片另一端边缘， 再次换为单液相工艺冲洗， 喷嘴 返回晶片中心后， 换为气液两相工艺喷射冲洗， 再次到达晶片边缘， 换为单 液相工艺冲洗， 如此往复进行清洗。
( 2 )当所述气液两相雾化清洗装置包括液相流体的流量控制装置时，所 述清洗方法为： 本发明的气液两相雾化清洗装置通过液相流体的流量控制装 置来降低液相流量， 由于雾化流体的质量小， 对晶片表面结构的冲击力小， 保护图形结构不被损坏。
本发明所述的气液两相雾化清洗装置在清洗过程中， 釆用气液两相与单 液相交替的工艺，其中，液体流量通过前述液相流体的流量控制装置来控制： 釆用单液相工艺时， 所述流量控制装置的第二分支管路气动阀关闭， 第一分 支管路气动阀开启， 流量由供液端管路的针阀控制， 所述气液两相雾化喷头 的气体导管的气动阀关闭， 液体导管的气动阀开启； 釆用气液两相工艺时， 液相流体的流量降低为适当值， 通过控制液相流量来调整雾状流体， 所述流 量控制装置的第一分支管路的气动阀关闭，第二分支管路气动阀和针阀开启， 流量由第二分支管路的针阀控制， 同时， 开启所述气液两相雾化喷头气体导 管和液体导管的气动阀， 即开启外层套管中的 N2等气相。
开始清洗时， 喷嘴从晶片一端边缘进入， 釆用单液相工艺冲洗， 直到经 过晶片中心， 换为气液两相工艺喷射冲洗， 将晶片表面杂质和污染物赶到晶 片边缘， 待喷嘴到达晶片另一端边缘， 再次换为单液相工艺冲洗， 喷嘴返回 晶片中心后， 换为气液两相工艺喷射冲洗， 再次到达晶片边缘， 换为单液相 工艺冲洗， 如此往复进行清洗。
本发明的有益效果：
( 1 )本发明的气液两相雾化清洗装置包括气液两相雾化喷头，清洗过程 中釆用气液两相与单液相交替的工艺， 该过程中增加了垂直于晶片沟槽的物 理力， 促进晶片沟槽中杂质和污染物向液相流体主体的传递， 提高了清洗的 效率和效果， 同时， 有利于节约液相流体。
( 2 )本发明通过液相流体的流量控制装置来降低液相流量，釆用雾化流 体冲洗晶片表面， 由于雾化流体的质量小， 对晶片表面结构的冲击力小， 减 少了对晶片的破坏。
( 3 )本发明中高动能的气液两相流体由晶片中心推向边缘，有利于将杂 质和污染物带出晶片表面， 同时可以减少因液滴溅射带来的污染。
( 4 )本发明的气液两相雾化清洗装置在清洗过程中釆用液相与气液两相 工艺交替进行， 既有助于保持晶片表面的液膜厚度， 又可促进表面液膜的扰 动， 有利于传递的进行。
( 5 )本发明由传统的化学药液臂、 超纯水臂和 N2臂三条工艺臂， 减少 为化学药液臂和超纯水臂两条。
附图说明
图 1是本发明实施例的气液两相雾化清洗装置的结构示意图。
图 2是本发明实施例的液相流体的流量控制装置的结构示意图。
图 3是喷嘴中外层套管中的气相对中心管路中液相的环向剪切作用示意 图。
图 4 是本发明实施例的装置清洗时的晶片表面示意图。
图 5是本发明实施例的气液两相与单液相交替工艺的示意图。
图中， 1 : 旋转臂； 2: 气体导管； 3: 液体导管； 4: 喷嘴； 5: 中心管路; 6: 外层套管； 7: 液体导管上的气动阀； 8: 气体导管上的气动阀； 9: 供 液端管路； 10: 供液端管路针阀； 11 : 供液端管路气动阀； 12: 第一分支 阀； 16: 第二分支管路气动阀； 17: 连接喷头端； 18: 回吸阀； 19: 雾状流 体； 20: 晶片表层液面； 21 : 晶片图形结构； 22: 晶片沟槽中的杂质和污染 物； 51 : 中心管路中的液相； 61 : 外层套管中的气相； 23: 喷嘴运动轨迹； 24: 晶片； 25: 经过晶片中心后到晶片边缘的气液两相工艺； 26: 从晶片边 缘到晶片中心的单液相工艺。 具体实施方式
以下实施例用于说明本发明， 但不用来限制本发明的范围。
实施例 1
如图 1所示， 本发明的气液两相雾化清洗装置包括气液两相雾化喷头， 所述气液两相雾化喷头为双层夹套结构，包括喷嘴 4、旋转臂 1、气体导管 2、 液体导管 3 , 所述喷嘴 4与旋转臂 1连接， 所述气体导管 2和液体导管 3固 定在旋转臂 1上。
其中， 所述喷嘴 4与旋转臂 1是一体的或以螺旋结构或以卡套结构方式 连接。
其中， 所述旋转臂 1为中空结构。
其中， 所述液体导管 3位于旋转臂 1内部； 液体导管 3上设有气动阀 7。 其中， 所述气体导管 2位于旋转臂 1内部； 气体导管 2上设有气动阀 8。 其中， 所述喷嘴 4包括中心管路 5和外层套管 6, 所述中心管路 5与液 体导管 3相连或者液体导管 3出口端固定直接作为中心管路 5; 所述外层套 管 6与气体导管 2相连。
其中， 所述喷嘴 4结构要保证 ^好的密封性。
其中， 所述中心管路 5中是液相流体， 可以是化学药液或超纯水等。 其中， 所述外层套管 6中是气相， 可以是 N2、 C02等。
实施例 2
本发明的气液两相雾化清洗装置还包括液相流体的流量控制装置， 所述 液相流体的流量控制装置与液体导管 3的进液一端相连， 如图 2所示， 所述 液相流体的流量控制装置为并联结构，包括供液端管路 9、第一分支管路 12、 第二分支管路 14和连接喷头端 17, 所述供液端管路 9设置一个供液端管路 针阀 10, 串联一个供液端管路气动阀 11 , 之后连接两个并联分支管路， 在第 一分支管路 12设置一个第一分支管路气动阀 13 , 用于液相工艺的供液； 第 二分支管路 14依次串联一个第二分支管路针阀 15和一个第二分支管路气动 阀 16, 用于气液两相工艺供液， 两分支管路汇合成一条管路,为连接喷头端 17, 并设置回吸阀 18。
在保证回吸阀 18稳定工作的条件下，同时关闭供液端管路 9上游的控制 两条并联分支管路的气动阀 11 , 开启气体导管 2上的气动阀 8, 开启外层套 管 6中的 N2能够作为 N2工艺臂。 即， 可发挥 N2工艺臂的功能， 因此， 本发 明可以省去传统工艺的 N2工艺臂。
实施例 3
当所述气液两相雾化清洗装置不包括液相流体的流量控制装置时， 所述 清洗方法为：所述气液两相雾化清洗装置釆用气液两相与单液相交替的工艺， 如图 1所示， 釆用单液相工艺时， 气液两相雾化喷头的气体导管 2的气动阀
8关闭， 液体导管 3的气动阀 7开启； 釆用气液两相工艺时， 同时开启气体 导管 2的气动阀 8和液体导管 3的气动阀 7。
当气液两相同时开启时， 同时开启气体导管 2的气动阀 8和液体导管 3 的气动阀 7, 如图 3所示， 所述外层套管 6中的气相 61对所述中心管路 5中 的液相 51产生环向剪切作用， 可促使所述中心管路 5中的液相 51雾化， 动 能增大， 增加了垂直于晶片沟槽的物理力， 加强了对晶片沟槽的冲击， 可加 快晶片沟槽中杂质和污染物的液相流体的扩散和传递， 提高了清洗的效率和 效果， 同时， 有利于节约液相流体。
如图 4所示，喷嘴 4中喷射的雾状流体 19冲洗晶片表面，形成了一层晶 片表层液面 20, 该过程中增加了垂直于晶片沟槽的物理力， 促进晶片沟槽中 杂质和污染物 22向雾状流体 19的传递， 提高了清洗的效率和效果。 将液相 流体的流量控制在一个较小值，即能达到减小流体对晶片图形结构 21的冲击 和节约液相流体的目的。
如图 5所示， 本发明的清洗方法釆用经过晶片中心后到晶片边缘的气液 两相工艺 25与从晶片边缘到晶片中心的单液相工艺 26交替的方法， 喷嘴 4 的运动轨迹 23 , 避免了雾化的小液滴容易在晶片 24表面干燥形成水痕的问 题， 其中， 开始清洗时， 喷嘴 4从晶片 24 —端边缘进入， 釆用单液相工艺 26冲洗， 直到经过晶片 24中心， 换为气液两相工艺 25喷射冲洗， 将晶片 24 沟槽中的杂质和污染物赶到晶片 24边缘,待喷嘴 4到达晶片 24另一端边缘, 再次换为单液相工艺 26冲洗， 喷嘴 4返回晶片 24中心后， 换为气液两相工 艺 25喷射冲洗， 再次到达晶片 24边缘， 换为单液相工艺 26冲洗， 如此往复 进行清洗。
实施例 4
当所述气液两相雾化清洗装置包括液相流体的流量控制装置时， 所述清 洗方法为： 本发明通过液相流体的流量控制装置来降低液相流量， 由于雾化 流体的质量小， 对晶片图形结构的冲击力小， 减少了对晶片的破坏。 本发明所述的气液两相雾化清洗装置在清洗过程中， 釆用气液两相与单 液相交替的工艺， 其中， 中心管路 5中液体流量通过前述液相流体的流量控 制装置来控制： 如图 2所示， 釆用单液相工艺时， 所述流量控制装置的第二 分支管路 14的气动阀 16关闭， 第一分支管路 12的气动阀 13开启， 流量由 供液端管路 9的针阀 10控制，所述气液两相雾化喷头的气体导管 2的气动阀 8关闭， 液体导管 3的气动阀 7开启； 釆用气液两相工艺时， 液相流体的流 量降低为适当值， 通过控制液相流量来调整雾状流体， 所述流量控制装置的 第一分支管路 12的气动阀 13关闭，第二分支管路 14的气动阀 16和针阀 15 开启， 流量由第二分支管路 14的针阀 15控制， 同时， 开启所述气液两相雾 化喷头气体导管 2的气动阀 8和液体导管 3的气动阀 7, 开启外层套管 6中 的 N2。
如图 5所示， 本发明的清洗方法釆用经过晶片中心后到晶片边缘的气液 两相工艺 25与从晶片边缘到晶片中心的单液相工艺 26交替的方法， 喷嘴 4 的运动轨迹 23 , 避免了雾化的小液滴容易在晶片 24表面干燥形成水痕的问 题， 其中， 开始清洗时， 喷嘴 4从晶片 24 —端边缘进入， 釆用单液相工艺 26冲洗， 直到经过晶片 24中心， 换为气液两相工艺 25喷射冲洗， 将晶片 24 沟槽中的杂质和污染物赶到晶片 24边缘,待喷嘴 4到达晶片 24另一端边缘， 再次换为单液相工艺 26冲洗， 喷嘴 4返回晶片 24中心后， 换为气液两相工 艺 25喷射冲洗， 再次到达晶片 24边缘， 换为单液相工艺 26冲洗， 如此往复 进行清洗。
本发明通过液相流体的流量控制装置来降低液相流量， 釆用雾化流体冲 洗晶片表面， 由于雾化流体的质量小， 对晶片表面结构的冲击力小， 减少了 对晶片的破坏。 本发明中高动能的气液两相流体由晶片中心推向边缘， 有利 于将杂质和污染物带出晶片表面， 同时可以减少因液滴溅射带来的污染。 本 发明的气液两相雾化清洗装置在清洗过程中釆用液相与气液两相工艺交替进 行， 既有助于保持晶片表面的液膜厚度， 又可促进表面液膜的扰动， 有利于 传递的进行。
上述清洗方法可以用上述气液两相雾化清洗装置或结构类似的装置来实 现。 以上的实施例仅仅是对本发明的优选实施方式进行描述，并非对本发明的 范围进行限定， 在不脱离本发明设计精神的前提下， 本领域普通工程技术人 员对本发明的技术方案作出的各种变型和改进， 均应落入本发明的权利要求 书确定的保护范围内。 工业实用性
本发明公开了一种气液两相雾化清洗装置， 所述装置包括气液两相雾化 喷头， 所述气液两相雾化喷头为双层夹套结构， 包括喷嘴、 旋转臂、 气体导 管、 液体导管， 所述喷嘴与旋转臂连接， 所述气体导管和液体导管固定在旋 转臂上， 且气体导管和液体导管上均设有气动阀。 本发明还提供了基于所述 气液两相雾化清洗装置的清洗方法。 本发明的气液两相雾化清洗装置在清洗 过程中增加了垂直于晶片沟槽的物理力， 促进晶片沟槽中杂质和污染物向液 相流体主体的传递， 提高了清洗的效率和效果， 减少了对晶片的破坏， 具有 工业实用性。

Claims

权 利 要 求 书
1、 一种气液两相雾化清洗装置， 其特征在于， 所述装置包括气液两相雾 化喷头， 所述气液两相雾化喷头为双层夹套结构， 包括喷嘴、 旋转臂、 气体 导管、 液体导管， 所述喷嘴与旋转臂连接， 所述气体导管和液体导管固定在 旋转臂上， 且气体导管和液体导管上均设有气动阀。
2、根据权利要求 1所述的装置， 其特征在于， 所述喷嘴与旋转臂是一体 的或以螺旋结构、 卡套结构方式连接。
3、 根据权利要求 1所述的装置， 其特征在于， 所述旋转臂为中空结构。
4、根据权利要求 1所述的装置， 其特征在于， 所述液体导管位于旋转臂 内部。
5、根据权利要求 1所述的装置， 其特征在于， 所述气体导管位于旋转臂 内部。
6、根据权利要求 1所述的装置， 其特征在于， 所述喷嘴包括中心管路和 外层套管， 所述中心管路与液体导管相连或者液体导管出口端固定直接作为 中心管路； 所述外层套管与气体导管相连。
7、根据权利要求 6所述的装置， 其特征在于， 所述中心管路中是液相流 体， 所述外层套管中是气相。
8、根据权利要求 1至 7任一项所述的装置， 其特征在于， 所述装置还包 括液相流体的流量控制装置， 所述液相流体的流量控制装置与液体导管的进 液一端相连， 所述液相流体的流量控制装置为并联结构， 包括供液端管路、 第一分支管路、 第二分支管路和连接喷头端， 所述供液端管路设置一个针阀, 串联一个气动阀,之后连接两个并联分支管路，在第一分支管路设置一个气动 阀； 第二分支管路依次串联一个针阀和一个气动阀， 两分支管路汇合成一条 管路,为连接喷头端， 并设置回吸阀。
9、一种基于权利要求 1-7任一项所述的气液两相雾化清洗装置的清洗方 法， 其特征在于， 所述清洗方法釆用气液两相与单液相交替的工艺， 釆用单 液相工艺时， 气液两相雾化喷头的气体导管的气动阀关闭， 液体导管的气动 阀开启； 釆用气液两相工艺时， 同时开启气体导管和液体导管的气动阀。
10、 一种基于权利要求 8所述气液两相雾化清洗装置的清洗方法， 其特征 在于， 所述清洗方法釆用气液两相与单液相交替的工艺， 液体流量通过所述 液相流体的流量控制装置来控制： 釆用单液相工艺时， 所述流量控制装置的 第二分支管路气动阀关闭， 第一分支管路气动阀开启， 流量由供液端管路的 针阀控制， 所述气液两相雾化喷头的气体导管的气动阀关闭， 液体导管的气 动阀开启； 釆用气液两相工艺时， 所述流量控制装置的第一分支管路的气动 阀关闭， 第二分支管路气动阀和针阀开启， 流量由第二分支管路的针阀控制， 同时， 开启所述气液两相雾化喷头气体导管和液体导管的气动阀。
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