WO2014064179A2 - Dispositif de traitement de substrats comprenant une plaque de couverture interchangeable ainsi que procédé pour remplacer une telle plaque de couverture - Google Patents

Dispositif de traitement de substrats comprenant une plaque de couverture interchangeable ainsi que procédé pour remplacer une telle plaque de couverture Download PDF

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Publication number
WO2014064179A2
WO2014064179A2 PCT/EP2013/072238 EP2013072238W WO2014064179A2 WO 2014064179 A2 WO2014064179 A2 WO 2014064179A2 EP 2013072238 W EP2013072238 W EP 2013072238W WO 2014064179 A2 WO2014064179 A2 WO 2014064179A2
Authority
WO
WIPO (PCT)
Prior art keywords
carrier
ceiling
ceiling plate
ceiling panel
process chamber
Prior art date
Application number
PCT/EP2013/072238
Other languages
German (de)
English (en)
Other versions
WO2014064179A3 (fr
Inventor
Paul Wilson
Original Assignee
Aixtron Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Se filed Critical Aixtron Se
Publication of WO2014064179A2 publication Critical patent/WO2014064179A2/fr
Publication of WO2014064179A3 publication Critical patent/WO2014064179A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles

Definitions

  • the invention relates to a device for treating substrates with a reactor housing, a process chamber arranged in the reactor chamber, having a process chamber ceiling which releasably fastened by means of fasteners to a ceiling mount ceiling plate, which are exchanged for a vertical downward displacement through a lateral opening of the reactor housing can, with a process chamber floor, which is assigned to a carrier which is rotatable about a vertical axis of rotation and in the direction of the axis of rotation on the ceiling plate liftable and lowered in the opposite direction.
  • DE 10 2005 056 324 A1 describes a CVD reactor with an exchangeable process chamber ceiling.
  • the device has a cooled process chamber ceiling holder, on the underside of which a ceiling plate is arranged. There are provided fastening means with which the ceiling plate is fixed to the ceiling plate holder.
  • Below the ceiling plate is the process chamber, in which a susceptor is located, on the upper side of which a multiplicity of substrates can be placed.
  • the substrates are coated within the process chamber in a CVD process.
  • process gases are introduced into the heatable process chamber through gas outlet openings of a gas inlet element. During the deposition process, not only does a layer form on the substrates or on the susceptor.
  • US 2011/0186078 A1 describes a semiconductor treatment device in which the process chamber walls can be cleaned by means of a brush.
  • US 2010/0003824 A1, WO 2011/052463, US Pat. No. 7,270,713 B2, US Pat. No. 6,827,815 B2, US Pat. No. 6,036,782 and US Pat. No. 7,651,584 B2 describe CVD reactors with a gas inlet element in the form of a showerhead.
  • the gas inlet member forms a ceiling holder, the underside of which has a multiplicity of gas outlet openings.
  • Below the ceiling plate holder is a ceiling plate, which also has a plurality of gas outlet openings.
  • the gas outlet openings of the ceiling plate are aligned with the gas outlet openings of the underside of the gas inlet member, so that in the gas inlet element initiated process gas can flow through the gas outlet openings of the ceiling plate in the process chamber.
  • the invention has for its object to provide measures by which the replacement of a ceiling plate can be automated.
  • the carrier is designed so that it is able to support the ceiling plate. It is also designed so that it can bring the cover plate carried by it from a raised position in which the fastening means engage the ceiling panel but are not locked with it, in a lowered position in which the ceiling panel of the fasteners solved, so that the Ckenplatte can be removed from the process chamber.
  • the carrier which is assigned to the bottom of the process chamber, thus forms a lifting device to displace the ceiling plate in the vertical direction.
  • the cover plate removed from the process chamber, on the underside of which parasitic coverings are located, is replaced by a cleaned ceiling tile. This is brought by a gripper through the loading opening into the process chamber. It is carried by the carrier and displaced vertically upwards.
  • the fastening means can first enter a pre-locked position (engaged position). By a relative displacement of the fasteners they then enter a locking position.
  • the carrier can then be lowered again.
  • the device according to the invention is preferably a CVD reactor and more preferably a MOCVD reactor.
  • the process chamber has a process chamber bottom which is formed by a susceptor. This susceptor is carried by the wearer.
  • the susceptor may carry a variety of substrates that are coated within the process chamber. This is done at a process temperature.
  • heating elements are provided below the susceptor or below the support carrying the susceptor, as they are known in principle from the prior art. With these heating elements of the susceptor is heated.
  • the process gas is introduced into the process chamber by means of a gas inlet element having the shape of a showerhead.
  • the gas inlet member has a plurality of downwardly open gas outlet openings.
  • the ceiling plate In the fastened position, the ceiling plate is located in a contacting system on the underside of the gas inlet member, wherein gas outlet openings of the ceiling plate are aligned with the gas outlet openings of the showerhead.
  • the Gaseinlassorgan forms a ceiling plate holder, since the ceiling plate on his Underside.
  • the fastening means can be brought by a rotation of the ceiling plate about an axis of rotation of a single engagement position (Vorverriegelungs ein) in a fastening position (locking position).
  • the fasteners tie the ceiling plate to the top of the reactor housing.
  • the carrier is mounted rotatably about a vertical axis of rotation in the reactor housing.
  • the rotary drive can be arranged outside or inside the reactor housing and is able to rotate a shaft carrying the carrier. The drive is also able to raise or lower the carrier in the vertical direction.
  • the rotary drive is preferably used to lock the ceiling plate to the fasteners. This can be done via a bayonet-type closure.
  • the fastening means have pin elements which protrude from the reactor housing cover down. These pin elements engage in peripheral openings in the ceiling panel.
  • the pin members have at their free, downwardly projecting ends mushroom-shaped heads which engage in keyhole-like openings of the ceiling plate. When lifting the ceiling plate, the heads first move into larger diameter engaging portions of the openings. When turning the ceiling plate, the pin elements pass into narrower holding portions of the holes, wherein the edge portions of these holding portions are engaged by the heads.
  • the fastening elements are additionally displaceable in the vertical direction, so that the ceiling plate can be brought by lifting the heads in a touching contact with the underside of the gas inlet member.
  • the ceiling tile To replace a ceiling tile, the ceiling tile must be placed in a ventilation position (approximately 1 to 5 mm) opposite the underside of the ceiling tile support formed by the showerhead.
  • a ventilation position approximately 1 to 5 mm
  • the pin member has a collar which acts on the lowering of the pin elements, the ceiling plate down so as to solve the ceiling plate holder or gas inlet member adhering ceiling tile from ceiling tile holder or gas inlet member, when the reactor housing soifige fastener is displaced downwards in the vertical direction.
  • the upwardly facing surface of the carrier is designed to carry a susceptor in the CVD process. If the carrier is rotated, the rotation is transferred to the susceptor, so that the layer growth can take place on the substrates with a rotationally driven susceptor. According to the invention it is provided that instead of a susceptor a ceiling plate support on the
  • the ceiling panel carrier can be placed.
  • the ceiling panel carrier has a bottom that fits the top of the carrier. If, for example, the upper side of the carrier is provided with finding structures with which the susceptor is placed in a defined position relative to the carrier when placed on the carrier, then the ceiling plate carrier has a similar, negative structuring.
  • the ceiling plate carrier can thus be brought reproducibly in an assignment position to the carrier.
  • the upwardly facing top of the ceiling panel carrier is designed so that it can accommodate the ceiling plate.
  • corresponding structuring projects or the like
  • the ceiling plate support is located on the support so that torques can be transmitted from the carrier to the ceiling plate carrier. Likewise, the ceiling plate support so attack the ceiling plate, so that torques can be transmitted to the ceiling plate.
  • the ceiling plate carrier can be displaced together with a ceiling plate resting on the ceiling plate carrier in the vertical direction.
  • the method of replacing a ceiling tile after a layer growth process is as follows: First, the loading opening of the reactor housing is opened. By means of a gripper which engages through the loading opening in the reactor housing, the susceptor is removed from the carrier and brought out of the reactor housing. The gripper now brings a ceiling plate carrier into the reactor housing and places it on the carrier. In this phase, the ceiling plate is lowered from a contacting system on the ceiling plate holder or on Gaseinlassorgn. This is done with a lifting device with which the reactor housing side fasteners can be slightly shifted up and down.
  • the top plate is merely separated by 1 to 5 mm from the ceiling plate holder or gas inlet element. It is only brought into a ventilation position.
  • the resting on the support ceiling panel support is then brought by lifting the carrier into a touching contact with the ceiling plate.
  • the ceiling plate can be slightly raised until it is detached from the heads of the fastening elements. It then lies between the head and the collar of the fastener.
  • the carrier is rotated by a certain angle of rotation, until the heads of the fasteners lie in the larger diameter engagement portions of the mounting holes. Then, the carrier is lowered, wherein the fastening elements come out of their engaged position.
  • the ceiling plate remains on the ceiling plate support.
  • the ceiling plate carrier together with the ceiling plate resting on it is gripped with a gripper and removed from the reactor housing through the loading opening. Subsequently, another ceiling panel support, on which there is a cleaned ceiling tile, brought with the gripper in the reactor housing.
  • the ceiling panel support or the ceiling slab lying thereon is placed in such a position on the support that the randseiti-
  • the fastening openings of the ceiling plate are located exactly below the reactor-side fastening elements. The exact alignment of the fasteners to each other such that the pin members when lifting the carrier pass through the mounting holes exactly, but can also be done by rotating the carrier when the ceiling plate support and the ceiling plate rest on the support.
  • FIG. 1 shows a cross section through an MOCVD reactor, wherein a susceptor is arranged on a carrier and a ceiling plate is arranged below a shower head,
  • FIG. 2 a ceiling plate in the bottom view
  • Figure 3 increases a bottom view of a arranged in the reactor housing cover plate in the region of the fastening means
  • Figure 4 a view according to Figure 1, wherein the ceiling plate is slightly lowered relative to the showerhead and the susceptor is replaced with a ceiling plate support, which on the support Figure 5 is a sequential view of Figure 4, in which the carrier is raised with the ceiling plate carrier resting thereon until the ceiling plate support is pushed to the ceiling plate and this has slightly raised
  • Figure 6 is a view according to Figure 5 after rotation of the support .
  • FIG. 7 shows an illustration according to FIG. 3 after rotation of the carrier
  • FIG. 8 shows a sequence illustration of FIG. 6, wherein the carrier is lowered together with the ceiling plate carrier and the ceiling plate resting on it.
  • the device shown in the drawings substantially corresponds to a device as described in DE 102 11 442 AI or DE 10 2005 056 324 AI.
  • the first mentioned document describes a CVD reactor in which a ceiling plate is located below a showerhead.
  • the drawings merely roughly outline the structure of a MOCVD reactor again. It has a gas-tight reactor housing 1, in which a gas inlet member 6 is located, which has the shape of a showerhead.
  • the gas inlet member 6 is fed via a supply line with process gases.
  • the gas inlet element 6 may have one or more gas distribution chambers, so that different process gases can enter into a process chamber 2 through gas outlet openings that are different from one another.
  • only a gas distribution chamber is shown.
  • the lower wall of the gas distribution chamber has gas outlet openings 7, which are arranged in a uniform area distribution.
  • the ceiling plate 5 is interchangeable. In the process position shown in Figure 1 gas outlet openings 8 of the ceiling plate 5 are aligned with the gas outlet openings 7 of the gas inlet member 6.
  • the ceiling plate 5 is in planar contact with the flat bottom of the gas inlet member 6.
  • the gas inlet member 6 is here conceptually ceiling tile holder.
  • the ceiling plate 5 shields the underside of the gas inlet member 6 against temperature radiation and parasitic assignments.
  • the ceiling plate 5 forms a ceiling of the process chamber 2 forming gas outlet surface.
  • fastening elements 9 For holding the ceiling plate 5 are fastening elements 9. These are pin members each with a shaft 10.
  • the fasteners 9 have a mushroom-shaped head 11, an upwardly adjoining neck, in which a collar 12 connects. The axial length of the neck, so the distance between the head 11 and collar 12 is greater than the material thickness of the ceiling plate. 5
  • a lifting device 13 attached to the reactor housing, in each case one fastening element 9 can be slightly displaced in the vertical direction.
  • each attachment opening 17 has a floor plan that corresponds to the layout of a keyhole.
  • the attachment opening 17 has an engagement portion 18 which has a free diameter which is larger than that
  • a holding section 19 which has the shape of a longitudinal slot, adjoins the engagement section 18.
  • the distance between two opposing slot walls is less than the diameter of the head 11 but greater than the diameter of the extending between the head 11 and collar 12 neck.
  • the head 11 is in the locking position shown in Figure 3, in which the upwardly facing flanks of the head 11 is located below the edge portion of the edge of the holding portion 19.
  • the gas inlet element 6 or the ceiling plate 5 arranged underneath forms the ceiling of the process chamber 2.
  • the bottom of the process chamber 2 is formed by a susceptor 20.
  • the substrates 21 to be coated are located on the susceptor 20.
  • the susceptor 20 is supported by a carrier 3, which can be rotated about a rotation axis D.
  • a shaft 4 is provided, which can be rotated by a lifting rotary drive 14.
  • the lift rotary drive 14 is also able to raise or lower the carrier 3 in the vertical direction.
  • the reactor housing 1 has a lateral loading opening 15, which can be closed gas-tight by a gate 16.
  • the loading opening 15 has a sufficient size to remove the susceptor 20 and the ceiling plate 5 by means of a gripper from the reactor housing 1.
  • the carrier 3 may have on its upwardly facing side three-dimensional aligning or centering structures, with which it is ensured that the susceptor 20 can assume a predetermined position relative to the carrier 3. Further, angle measuring means, not shown, are provided in order to adjust the rotational position of the carrier 3 absolutely.
  • the susceptor 20 is heated from below with heating elements, not shown, as described, for example, by DE 102 11 442 A1.
  • process gases are introduced into the process chamber 2. Due to the particular pyrolytic chemical reactions taking place there, layers grow on the substrate surfaces. It can not be avoided that the free surface sections of the susceptor 20 are also coated.
  • occupancies form on the underside of the ceiling panel 5 or even into the gas outlet openings 8 inside. It is therefore necessary to replace the susceptor 20 and the ceiling plate 5 from time to time, especially after each run.
  • the susceptor 20 with the coated substrates 21 resting thereon is first removed from the opened loading opening 15 with the aid of a gripper (not shown).
  • the carrier 3 can be moved into a suitable lifting position so that the susceptor 20 can be gripped by the gripper.
  • a ceiling plate support 22 is placed on the now empty carrier 3 is then, as shown in Figure 4, a ceiling plate support 22 is placed.
  • This ceiling panel carrier 22 may have the same three-dimensional structures on the underside, which also has the susceptor 20 so that it rests in a reproducible position on the support 3.
  • the three-dimensional structures, which are not shown, which may be elevations or depressions, are designed such that the carrier 3 can transmit a torque to the ceiling plate holder 22.
  • the ceiling plate 5 can slightly adhere to the ceiling plate holder 6, ie the gas inlet member 6.
  • the fastening elements 9 are displaced slightly downward by means of the lifting devices 13.
  • the collars 12 abut from above against the edges of the holding portions 19 of the fastening openings 17 and separate the ceiling panel 5 from the ceiling panel holder 6 until the ceiling panel 5 has assumed the ventilation position shown in FIG. In this position, the ceiling plate 5 is supported by the heads 11 of the fasteners 9.
  • the support 3 is moved upwards until the ceiling panel support 22 comes into contact with the ceiling panel 5 (see FIG. 5).
  • the ceiling plate 5 can be raised slightly, so that a gap between the head 11 and underside of the ceiling panel 5 is formed.
  • the neck of the fastening element 9 now passes freely through the fastening opening 17.
  • FIG. 6 shows a sequence in which the carrier 3 has been slightly rotated about the axis of rotation D. This is done using the lift Rotary drive 14. The rotation takes place so far that the heads 11 are in the region of the engagement portions 18 of the mounting hole 17, so that the operating position shown in Figure 7 is reached.
  • the ceiling plate support 22 has upwardly facing structures with which the torque can engage the ceiling plate 5 transferring.
  • the carrier 3 can be lowered into the removal position shown in Figure 8.
  • the resting on the ceiling plate support 22 ceiling plate 5 is displaced with it down.
  • Another ceiling plate carrier 22, which carries a cleaned ceiling plate 5 is placed with the gripper on the support 3. This is done in an orientation in which the mounting holes 17 are located with their engagement portions 18 just below the fasteners 9.
  • the relevant operating position corresponds to the operating position shown in FIG.
  • the carrier 3 is raised until the operating position shown in Figure 6 and Figure 7 is reached. Subsequently, a rotation of the carrier 3 takes place about the shaft 4, so that the fastening means 9, 17 are brought from their engagement position into its fastening position, which is shown in Figures 5 and 3 respectively.
  • the carrier 3 is brought together with the ceiling plate carrier 22 resting on it in the lowered position in Figure 4. He is thereby separated from the ceiling plate 5. Subsequently, the ceiling plate 5 lifted by means of the lifting devices 13 until it rests in a contacting contact with the gas inlet member 6.
  • the ceiling plate carrier 22 is replaced by a susceptor 20 equipped with substrates 21 to be coated, so that the starting position is reached in FIG.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif de traitement de substrats (21) comprenant un logement de réacteur (1), une chambre de processus (2) disposée dans le logement de réacteur (1), un ciel de chambre de processus qui présente une plaque de ciel (5) qui est fixée à l'aide de moyens de fixation (9, 17) de manière amovible au logement de réacteur (1), en particulier à un support de ciel (6), et qui peut être remplacée après un déplacement vertical vers le bas à travers une ouverture (15) latérale du logement de réacteur (1), un fond de chambre de processus auquel est associé un support (3) qui peut tourner autour d'un axe de rotation vertical (D) et peut être soulevé dans la direction de l'axe de rotation (D) sur la plaque de ciel (5) et être abaissée dans le sens opposé. Pour automatiser le remplacement d'une plaque de ciel, support (3) est conçu de manière à pouvoir être déplacé selon un mouvement de va-et-vient en supportant la plaque de ciel (5) entre une position soulevée dans laquelle les moyens de fixation (9, 17) sont en prise avec la plaque de ciel (5) et une position abaissée dans laquelle la plaque de ciel (5) détachée des moyens de fixation (9, 17) peut être enlevée de la chambre de processus (2). L'invention concerne également un procédé pour remplacer une plaque de ciel (5) dans un dispositif.
PCT/EP2013/072238 2012-10-24 2013-10-24 Dispositif de traitement de substrats comprenant une plaque de couverture interchangeable ainsi que procédé pour remplacer une telle plaque de couverture WO2014064179A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012110125.6 2012-10-24
DE102012110125.6A DE102012110125A1 (de) 2012-10-24 2012-10-24 Vorrichtung zum Behandeln von Substraten mit einer auswechselbaren Deckenplatte sowie Verfahren zum Auswechseln einer derartigen Deckenplatte

Publications (2)

Publication Number Publication Date
WO2014064179A2 true WO2014064179A2 (fr) 2014-05-01
WO2014064179A3 WO2014064179A3 (fr) 2014-07-03

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PCT/EP2013/072238 WO2014064179A2 (fr) 2012-10-24 2013-10-24 Dispositif de traitement de substrats comprenant une plaque de couverture interchangeable ainsi que procédé pour remplacer une telle plaque de couverture

Country Status (3)

Country Link
DE (1) DE102012110125A1 (fr)
TW (1) TW201428129A (fr)
WO (1) WO2014064179A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020260449A1 (fr) 2019-06-28 2020-12-30 Aixtron Se Élément plat utilisable dans un réacteur cvd
CN115369483A (zh) * 2022-10-24 2022-11-22 无锡先为科技有限公司 成膜设备及其维护方法

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WO2016135377A1 (fr) * 2015-02-25 2016-09-01 Beneq Oy Appareil pour soumettre une surface d'un substrat à des réactions de surface successives
DE102018126617A1 (de) 2018-10-25 2020-04-30 Aixtron Se Schirmplatte für einen CVD-Reaktor
DE102018130859A1 (de) * 2018-12-04 2020-06-04 Aixtron Se CVD-Reaktor mit einem von einer Schirmplatten-Anordnung abgedeckten Gaseinlassorgan
CN113025995B (zh) * 2019-12-09 2023-05-09 苏州新材料研究所有限公司 一种mocvd反应系统
DE102020103946A1 (de) 2020-02-14 2021-08-19 AIXTRON Ltd. Gaseinlasseinrichtung für einen CVD-Reaktor
DE102020103947A1 (de) 2020-02-14 2021-08-19 AIXTRON Ltd. CVD-Reaktor und Verfahren zum Handhaben einer Prozesskammer-Deckenplatte

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DE10211442A1 (de) 2002-03-15 2003-09-25 Aixtron Ag Vorrichtung zum Abscheiden von dünnen Schichten auf einem Substrat
US6827815B2 (en) 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
DE102005056324A1 (de) 2005-11-25 2007-06-06 Aixtron Ag CVD-Reaktor mit auswechselbarer Prozesskammerdecke
US7270713B2 (en) 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
US20100003824A1 (en) 2008-07-07 2010-01-07 Lam Research Corporation Clamped showerhead electrode assembly
US7651584B2 (en) 2004-01-16 2010-01-26 Tokyo Electron Limited Processing apparatus
WO2011052463A1 (fr) 2009-11-02 2011-05-05 東レ株式会社 Dispositif de dépôt chimique en phase vapeur plasma, et procédé de fabrication de film mince de silicium
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US6036782A (en) 1997-10-07 2000-03-14 Tokyo Electron Limited Shower head
US6827815B2 (en) 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
DE10211442A1 (de) 2002-03-15 2003-09-25 Aixtron Ag Vorrichtung zum Abscheiden von dünnen Schichten auf einem Substrat
US7270713B2 (en) 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
US7651584B2 (en) 2004-01-16 2010-01-26 Tokyo Electron Limited Processing apparatus
DE102005056324A1 (de) 2005-11-25 2007-06-06 Aixtron Ag CVD-Reaktor mit auswechselbarer Prozesskammerdecke
US20100003824A1 (en) 2008-07-07 2010-01-07 Lam Research Corporation Clamped showerhead electrode assembly
WO2011052463A1 (fr) 2009-11-02 2011-05-05 東レ株式会社 Dispositif de dépôt chimique en phase vapeur plasma, et procédé de fabrication de film mince de silicium
US20110186078A1 (en) 2010-02-01 2011-08-04 Hermes-Epitek Corporation Semiconductor Equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020260449A1 (fr) 2019-06-28 2020-12-30 Aixtron Se Élément plat utilisable dans un réacteur cvd
DE102019117479A1 (de) * 2019-06-28 2020-12-31 Aixtron Se In einem CVD-Reaktor verwendbares flaches Bauteil
CN115369483A (zh) * 2022-10-24 2022-11-22 无锡先为科技有限公司 成膜设备及其维护方法

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Publication number Publication date
TW201428129A (zh) 2014-07-16
WO2014064179A3 (fr) 2014-07-03
DE102012110125A1 (de) 2014-04-24

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