WO2014054580A1 - Dispositif à ondes élastiques de surface - Google Patents

Dispositif à ondes élastiques de surface Download PDF

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Publication number
WO2014054580A1
WO2014054580A1 PCT/JP2013/076540 JP2013076540W WO2014054580A1 WO 2014054580 A1 WO2014054580 A1 WO 2014054580A1 JP 2013076540 W JP2013076540 W JP 2013076540W WO 2014054580 A1 WO2014054580 A1 WO 2014054580A1
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Prior art keywords
idt electrode
acoustic wave
wave device
groove
surface acoustic
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PCT/JP2013/076540
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English (en)
Japanese (ja)
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門田　道雄
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株式会社村田製作所
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Priority to JP2014539729A priority Critical patent/JP5757369B2/ja
Publication of WO2014054580A1 publication Critical patent/WO2014054580A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation

Definitions

  • the present invention relates to a surface acoustic wave device in which an IDT electrode is formed by embedding a metal in a groove formed on one surface of a LiNbO 3 substrate, and more particularly to a surface acoustic wave device using a Love wave.
  • Patent Document 1 discloses a surface acoustic wave device using a LiTaO 3 substrate or a LiNbO 3 substrate.
  • this surface acoustic wave device grooves are formed on a piezoelectric substrate made of a LiTaO 3 substrate or a LiNbO 3 substrate.
  • An IDT electrode is formed by filling the groove with Al.
  • an SiO 2 film is laminated so as to cover the piezoelectric substrate and the IDT electrode. Thereby, an improvement in temperature characteristics and a high reflection coefficient can be obtained.
  • Patent Document 1 also discloses a surface acoustic wave device in which a groove on the upper surface of a LiNbO 3 substrate is filled with Au.
  • the electromechanical coupling coefficient k 2 and the reflection coefficient change by changing the Euler angle of the LiNbO 3 substrate and the film thickness of the Au film.
  • Patent Document 1 shows that when Au is used instead of Al as described above, an electromechanical coupling coefficient k 2 equal to or higher than Al and a reflection coefficient larger than Al are obtained. It ’s just that. Further, it is only described that an electromechanical coupling coefficient k 2 and a reflection coefficient close to Au can be obtained even for metals such as Cu, Ni, Mo, Ag, Ta, and W. Note that Patent Document 1 does not specifically mention a configuration capable of obtaining a wider specific bandwidth.
  • An object of the present invention is to provide a surface acoustic wave device that can obtain a wider specific bandwidth.
  • the surface acoustic wave device has a LiNbO 3 substrate having a groove formed on the upper surface and an Euler angle in the range of (0 °, 80 ° to 130 °, 0 °).
  • a groove provided on the upper surface of the LiNbO 3 substrate is filled with a metal having a density higher than that of aluminum to form an IDT electrode. A Love wave excited by the IDT electrode is used.
  • the groove extends in the direction in which the electrode finger of the IDT electrode extends, the side surface of the groove in the cross section of the groove is inclined, and the angle between the side surface and the extended surface of the bottom of the groove
  • the tilt angle A is in the range of 56 ° to 84 °, and the duty of the IDT electrode is 0.45 or less.
  • the IDT electrode is made of a material mainly composed of Pt, and the duty is 0.2 or more. In this case, a sufficient specific bandwidth of 20% or more can be obtained using an IDT electrode made of Pt. More preferably, when the wavelength determined by the period of the electrode fingers of the IDT electrode is ⁇ , the thickness of the IDT electrode made of Pt is in the range of 0.06 ⁇ to 0.5 ⁇ .
  • the IDT electrode is made of a material mainly composed of Cu, and the duty is 0.25 or more.
  • the duty is 0.25 or more.
  • the thickness of the IDT electrode made of Cu is in the range of 0.16 ⁇ to 0.5 ⁇ . In this case, the specific bandwidth can be more reliably set to 20% or more.
  • the IDT electrode is made of a material mainly composed of Mo, and the duty is 0.35 or more.
  • Mo the thickness of the IDT electrode made of Mo is in the range of 0.16 ⁇ to 0.3 ⁇ . In this case, the specific bandwidth can be more reliably set to 20% or more.
  • the IDT electrode is made of a material mainly containing Ni, and the duty is 0.4 or more.
  • the duty is 0.4 or more.
  • the thickness of the IDT electrode made of Ni is in the range of 0.2 ⁇ to 0.3 ⁇ . In this case, the specific bandwidth can be more reliably set to 20% or more.
  • the IDT electrode is made of a material mainly composed of Ta, and the duty is 0.3 or more.
  • the duty is 0.3 or more.
  • the thickness of the IDT electrode made of Ta is in the range of 0.11 ⁇ to 0.3 ⁇ . In this case, the specific bandwidth can be more reliably set to 20% or more.
  • the IDT electrode is made of a material mainly composed of W, and the duty is 0.3 or more.
  • a surface acoustic wave device having a wide specific bandwidth can be reliably provided by using W as the IDT electrode. More preferably, when the wavelength determined by the period of the electrode fingers of the IDT electrode is ⁇ , the thickness of the IDT electrode made of W is in the range of 0.08 ⁇ or more and 0.3 ⁇ or less. In this case, the specific bandwidth can be more reliably set to 20% or more.
  • the IDT electrode made of a metal having a density higher than that of aluminum is formed by filling the groove with the metal, and the inclination angle A of the groove is 56 ° to 84 °.
  • the duty of the IDT electrode is 0.45 or less
  • the Euler angle of the LiNbO 3 substrate is in the specific range, so that the specific bandwidth of the surface acoustic wave device can be expanded. It becomes. Accordingly, it is possible to provide a broadband resonator and a bandpass filter.
  • FIG. 1A and FIG. 1B are a schematic plan view of a surface acoustic wave device according to an embodiment of the present invention and a partial surface cross-sectional view showing the main part thereof.
  • Euler in structure IDT electrode composed of Cu is LiNbO 3 SAW devices are formed by filling the Cu in the groove of the upper surface of the substrate to form an IDT electrode composed of Cu film LiNbO 3 substrate It is a figure which shows the relationship between (theta) of an angle, and an electromechanical coupling coefficient.
  • FIG. 3 shows a groove inclination angle A in a surface acoustic wave device in which an IDT electrode is formed by filling a groove on an upper surface of a EuN angle (0 °, 112 °, 0 °) LiNbO 3 substrate with Pt. It is a figure which shows the relationship between the duty of IDT electrode, and specific bandwidth (DELTA) f.
  • FIG. 4 shows the thickness of the Pt film (H / H) in a surface acoustic wave device in which an IDT electrode is formed by filling a groove on the upper surface of a LiNbO 3 substrate with Euler angles (0 °, 112 °, 0 °).
  • FIG. 5 shows a groove inclination angle A in a surface acoustic wave device in which an IDT electrode is formed by filling a groove on the upper surface of a EuN angle (0 °, 112 °, 0 °) LiNbO 3 substrate with Cu. It is a figure which shows the relationship between the duty of IDT electrode, and specific bandwidth (DELTA) f.
  • FIG. 5 shows a groove inclination angle A in a surface acoustic wave device in which an IDT electrode is formed by filling a groove on the upper surface of a EuN angle (0 °, 112 °, 0 °) LiNbO 3 substrate with Cu.
  • FIG. 6 shows the thickness of a Cu film (H / H) in a surface acoustic wave device in which an IDT electrode is formed by filling a groove on the upper surface of a LiNbO 3 substrate with Euler angles (0 °, 112 °, 0 °). It is a figure which shows the relationship between (lambda)), the duty of IDT electrode, and specific bandwidth (DELTA) f.
  • FIG. 7 shows a groove inclination angle A in a surface acoustic wave device in which an IDT electrode is formed by filling Mo in a groove on the upper surface of a EuN angle (0 °, 112 °, 0 °) LiNbO 3 substrate.
  • FIG. 8 shows the thickness of the Mo film (H / H) in a surface acoustic wave device in which an IDT electrode is formed by filling Mo in a groove on the upper surface of a LiNbO 3 substrate with Euler angles (0 °, 112 °, 0 °). It is a figure which shows the relationship between (lambda)), the duty of IDT electrode, and specific bandwidth (DELTA) f.
  • FIG. 9 shows a groove inclination angle A in a surface acoustic wave device in which an IDT electrode is formed by filling a groove on the upper surface of a LiNbO 3 substrate with Euler angles (0 °, 112 °, 0 °). It is a figure which shows the relationship between the duty of IDT electrode, and specific bandwidth (DELTA) f.
  • FIG. 10 shows the thickness of the Ni film (H / H) in a surface acoustic wave device in which an IDT electrode is formed by filling a groove on the upper surface of a LiNbO 3 substrate with Euler angles (0 °, 112 °, 0 °).
  • FIG. 11 shows an inclination angle A of a groove in a surface acoustic wave device in which an IDT electrode is formed by filling a groove on the upper surface of a LiNbO 3 substrate with Euler angles (0 °, 112 °, 0 °); It is a figure which shows the relationship between the duty of IDT electrode, and specific bandwidth (DELTA) f.
  • FIG. 11 shows an inclination angle A of a groove in a surface acoustic wave device in which an IDT electrode is formed by filling a groove on the upper surface of a LiNbO 3 substrate with Euler angles (0 °, 112 °, 0 °); It is a figure which shows the relationship between the duty of IDT electrode, and specific bandwidth (DELTA) f.
  • FIG. 12 shows the thickness (H / H) of a Ta film in a surface acoustic wave device in which an IDT electrode is formed by filling a groove on the upper surface of a LiNbO 3 substrate with Euler angles (0 °, 112 °, 0 °). It is a figure which shows the relationship between (lambda)), the duty of IDT electrode, and specific bandwidth (DELTA) f.
  • FIG. 13 shows a groove inclination angle A in a surface acoustic wave device in which an IDT electrode is formed by filling a groove on the upper surface of a LiNbO 3 substrate with Euler angles (0 °, 112 °, 0 °), It is a figure which shows the relationship between the duty of IDT electrode, and specific bandwidth (DELTA) f.
  • FIG. 14 shows the thickness of a W film (H / H) in a surface acoustic wave device in which an IDT electrode is formed by filling a groove on the upper surface of a LiNbO 3 substrate with Euler angles (0 °, 112 °, 0 °). It is a figure which shows the relationship between (lambda)), the duty of IDT electrode, and specific bandwidth (DELTA) f.
  • a surface acoustic wave device 11 has a LiNbO 3 substrate 1.
  • an IDT electrode 3 and reflectors 12 and 13 disposed on both sides of the IDT electrode 3 in the surface wave propagation direction are formed on a LiNbO 3 substrate 1.
  • a plurality of grooves 1 b are formed on the upper surface 1 a of the LiNbO 3 substrate 1.
  • the groove 1b corresponds to an electrode finger constituent part of the IDT electrode.
  • the groove 1b is filled with a metal having a higher density than Al to form the IDT electrode 3.
  • the reflectors 12 and 13 shown in FIG. 1A are also formed by filling a plurality of grooves with a metal having a density higher than that of Al.
  • the upper surface of the metal filled in the groove 1b and the upper surface 1a of the LiNbO 3 substrate 1 are substantially flush with each other.
  • channel 1b are made into the inclined surface.
  • the electrode fingers of the IDT electrode 3 extend in a direction orthogonal to the elastic wave propagation direction.
  • FIG. 1B a portion corresponding to the cross section of the electrode finger is shown.
  • the side surfaces 1b1 and 1b2 are inclined from the direction orthogonal to the bottom surface 1b3 of the groove 1b. More specifically, the inclination angle A shown in FIG. 1 (b) is in the range of 56 ° to 84 °.
  • the inclination angle A is the angle formed between the side surface 1b1 and the extended portion 1b4 of the bottom surface 1b3, in other words, the angle formed between the side surface 1b1 and the electrode finger upper surface 3a, taking the side surface 1b1 as an example.
  • the duty of the IDT electrode 3 is set to 0.45 or less.
  • the duty is a value represented by a ratio between the upper surface of the groove 1b, that is, the width of the electrode finger upper surface 3a and the value obtained by adding the distance between the electrode finger upper surface 3a and the adjacent electrode finger.
  • the Euler angles of the LiNbO 3 substrate 1 are (0 °, 80 ° to 130 °, 0 °). In the present embodiment, since the above configuration is provided, a large specific bandwidth ⁇ f is obtained. This will be described more specifically below.
  • Euler angles of LiNbO 3 (0 °, ⁇ , 0 °) is a diagram showing a theta of, the relationship between the electromechanical coupling factor k 2.
  • the IDT electrode is made of Cu and has a thickness of 0.1 ⁇ , 0.16 ⁇ , 0.2 ⁇ , or 0.5 ⁇ .
  • ⁇ is the wavelength of the propagating elastic wave.
  • the solid line B in FIG. 2 shows the electromechanical coupling coefficient k 2 of the Love wave in the surface acoustic wave device 11 of the above embodiment when the thickness of Cu is 0.1 [lambda], the thickness of the solid line C is Cu 0.1 [lambda] It shows the change in electromechanical coupling coefficient k 2 of the Rayleigh wave in the case where.
  • a broken line D indicates a Love wave in a structure in which an IDT electrode made of a Cu film having a thickness of 0.1 ⁇ is formed on the upper surface without forming a groove on the upper surface of LiNbO 3 when the thickness of Cu is 0.1 ⁇ . shows the change in electromechanical coupling coefficient k 2, the broken line E shows the change of the electromechanical coupling coefficient k 2 of the Rayleigh wave.
  • the two-dot chain line F, the solid line G, and the one-dot chain line H in FIG. 2 indicate the rub in the surface acoustic wave device 11 of the above embodiment when the Cu thickness is 0.16 ⁇ , 0.2 ⁇ , or 0.5 ⁇ , respectively. It shows the change in electromechanical coupling coefficient k 2 of the waves.
  • the electromechanical coupling coefficient k 2 of the Love wave is It can be seen that it can be increased to 0.3 or more. Therefore, it can be seen that the specific bandwidth can be effectively increased.
  • the Euler angle ⁇ is 80 ° even when another metal having a higher density than Al such as Pt and Au is used as the electrode material. If it is within the range of ⁇ 130 °, it is possible to effectively increase the electromechanical coupling coefficient k 2 of the Love wave.
  • the electrode material is Pt and Cu will be described separately.
  • Pt (In the case of IDT electrode made of Pt) Pt was used as the electrode material.
  • the electrode material only needs to be mainly composed of Pt.
  • Pt is mainly composed of the value of Pt (density ⁇ electrode thickness) and the whole IDT electrode composed of a plurality of types of electrode materials.
  • the ratio of the density of the electrode and the sum of the products of the thicknesses of the electrodes exceeds 0.5.
  • the sum of the product of the density of the entire IDT electrode and the electrode thickness is a value represented by the following equation.
  • ⁇ density
  • T electrode thickness
  • n the number of electrode layers constituting the IDT electrode.
  • the Euler angles of the LiNbO 3 substrate were (0 °, 112 °, 0 °).
  • Various surface acoustic wave devices 11 were manufactured by changing the inclination angle A in the groove 1b in various ways, except that the thickness of the IDT electrode made of Pt was 0.1 ⁇ .
  • FIG. 3 shows the relationship between the groove inclination angle A, the duty, and the love wave specific bandwidth ⁇ f.
  • the specific bandwidth ⁇ f is a value represented by (fa ⁇ fr) / fr where the resonance frequency in the surface acoustic wave device 11 is fr and the antiresonance frequency is fa.
  • the specific bandwidth ⁇ f can be 0.20 or more.
  • FIG. 4 shows the relationship between the Pt thickness (H / ⁇ ) and the specific bandwidth ⁇ f when the Pt film thickness, that is, the groove thickness in the surface acoustic wave device 11 is changed.
  • the inclination angle A of the groove was 78 °.
  • the duty when the duty is in the range of 0.2 to 0.45, a Love wave is excited and a large specific bandwidth ⁇ f is obtained. In this case, when the duty is less than 0.2, the Love wave excitation state is unstable. Therefore, when an IDT electrode made of Pt is used, the duty is desirably 0.2 or more.
  • the thickness H / ⁇ of the Pt film is preferably 0.06 ⁇ or more and 0.5 ⁇ or less within the duty range of 0.2 to 0.45. . Accordingly, it can be seen that the specific bandwidth ⁇ f can be surely set to 0.20 or more, that is, 20% or more. Therefore, the thickness of the Pt film is preferably 0.06 ⁇ or more and 0.5 ⁇ or less. From FIG. 4, the thickness of the Pt film is more preferably 0.08 ⁇ or more.
  • FIG. 5 shows the relationship among the groove inclination angle A, the duty, and the specific bandwidth ⁇ f.
  • the specific bandwidth ⁇ f is a value represented by (fa ⁇ fr) / fr where the resonance frequency in the surface acoustic wave device 11 is fr and the antiresonance frequency is fa.
  • the specific bandwidth ⁇ f can be 0.20 or more.
  • FIG. 6 shows the relationship between the Cu thickness (H / ⁇ ) and the specific bandwidth ⁇ f when the Cu film thickness, that is, the groove thickness in the surface acoustic wave device 11 is changed.
  • the inclination angle A of the groove was 78 °.
  • the duty when the duty is in the range of 0.25 to 0.45, a Love wave is excited and a large specific bandwidth ⁇ f is obtained. More preferably, if the duty is 0.4 or less, it can be seen that ⁇ f can be 20% or more. In this case, when the duty is less than 0.25, the Love wave excitation state is unstable. Therefore, when an IDT electrode made of Cu is used, the duty is desirably 0.25 or more.
  • the thickness H / ⁇ of the Cu film is preferably 0.16 ⁇ or more and 0.5 ⁇ or less within the range of the duty of 0.25 to 0.45. . Accordingly, it can be seen that the specific bandwidth ⁇ f can be surely set to 0.20 or more, that is, 20% or more. Therefore, the thickness of the Cu film is desirably 0.16 ⁇ or more and 0.5 ⁇ or less. Further, more preferably 0.17 ⁇ or more from FIG. It can also be seen that if the duty is in the range of 0.25 to 0.4 and the thickness of the Cu film is 0.16 ⁇ to 0.5 ⁇ , ⁇ f can be 20% or more.
  • FIG. 7 shows the relationship between the groove inclination angle A, the duty, and the specific bandwidth ⁇ f.
  • the specific bandwidth ⁇ f is a value represented by (fa ⁇ fr) / fr where the resonance frequency in the surface acoustic wave device 11 is fr and the antiresonance frequency is fa.
  • the specific bandwidth ⁇ f can be 0.20 or more when the inclination angle A is in the range of 56 ° to 84 ° and the duty is 0.45 or less.
  • FIG. 8 shows the relationship between the Mo thickness (H / ⁇ ) and the specific bandwidth ⁇ f when the Mo film thickness, that is, the groove thickness in the surface acoustic wave device 11 is changed.
  • the inclination angle A of the groove was 78 °.
  • the thickness H / ⁇ of the Mo film is preferably 0.16 ⁇ or more and 0.3 ⁇ or less within a duty range of 0.35 to 0.45. Accordingly, it can be seen that the specific bandwidth ⁇ f can be reliably set to 0.23 or more, that is, 23% or more. Therefore, the thickness of the Mo film is desirably 0.16 ⁇ or more and 0.3 ⁇ or less.
  • FIG. 9 shows the relationship among the groove inclination angle A, the duty, and the specific bandwidth ⁇ f.
  • the specific bandwidth ⁇ f is a value represented by (fa ⁇ fr) / fr where the resonance frequency in the surface acoustic wave device 11 is fr and the antiresonance frequency is fa.
  • the specific bandwidth ⁇ f can be 0.22 or more.
  • FIG. 10 shows the relationship between the Ni thickness (H / ⁇ ) and the specific bandwidth ⁇ f when the Ni film thickness, that is, the groove thickness in the surface acoustic wave device 11 is changed.
  • the inclination angle A of the groove was 78 °.
  • the thickness H / ⁇ of the Ni film is preferably 0.2 ⁇ or more and 0.3 ⁇ or less within the duty range of 0.4 to 0.45. Accordingly, it can be seen that the specific bandwidth ⁇ f can be surely set to 0.22 or more, that is, 22% or more. Therefore, the thickness of the Ni film is preferably 0.2 ⁇ or more and 0.3 ⁇ or less.
  • FIG. 11 shows the relationship between the groove inclination angle A, the duty, and the specific bandwidth ⁇ f.
  • the specific bandwidth ⁇ f is a value represented by (fa ⁇ fr) / fr where the resonance frequency in the surface acoustic wave device 11 is fr and the antiresonance frequency is fa.
  • the specific bandwidth ⁇ f can be 0.23 or more.
  • FIG. 12 shows the relationship between the Ta thickness (H / ⁇ ) and the specific bandwidth ⁇ f when the Ta film thickness, that is, the groove thickness in the surface acoustic wave device 11 is changed.
  • the inclination angle A of the groove was 78 °.
  • ⁇ f can be 23.5% or more when the duty is 0.4 or less.
  • the duty is desirably 0.3 or more.
  • the thickness H / ⁇ of the Ta film is preferably 0.11 ⁇ or more and 0.3 ⁇ or less in the range of duty of 0.3 to 0.45. Accordingly, it can be seen that the specific bandwidth ⁇ f can be reliably set to 0.21 or more, that is, 21% or more. Therefore, the thickness of the Ta film is preferably 0.11 ⁇ or more and 0.3 ⁇ or less.
  • FIG. 13 shows the relationship among the groove inclination angle A, the duty, and the specific bandwidth ⁇ f.
  • the specific bandwidth ⁇ f is a value represented by (fa ⁇ fr) / fr where the resonance frequency in the surface acoustic wave device 11 is fr and the antiresonance frequency is fa.
  • the specific bandwidth ⁇ f can be 0.23 or more.
  • FIG. 14 shows the relationship between the W thickness (H / ⁇ ) and the specific bandwidth ⁇ f when the thickness of the W in the surface acoustic wave device 11, that is, the thickness of the groove is changed.
  • the inclination angle A of the groove was 78 °.
  • the thickness H / ⁇ of the W film is preferably 0.08 ⁇ or more and 0.3 ⁇ or less within a duty range of 0.3 to 0.45. Accordingly, it can be seen that the specific bandwidth ⁇ f can be reliably set to 0.23 or more, that is, 23% or more. Therefore, the thickness of the W film is desirably 0.08 ⁇ or more and 0.3 ⁇ or less.
  • the IDT electrode is mainly composed of Pt, Cu, Mo, Ni, Ta or W.
  • the IDT electrode is composed of a metal having a density higher than that of Al. What is necessary is just to be carried out and it is not limited to said each metal.
  • the one-port surface acoustic wave resonator has been described.
  • the present invention can also be applied to other surface acoustic wave devices such as a resonator type surface acoustic wave filter. it can. Accordingly, the number and arrangement of the IDT electrodes can be appropriately modified according to the function of the surface acoustic wave device.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

L'invention concerne un dispositif à ondes élastiques de surface permettant d'obtenir une bande plus large. Un dispositif à ondes élastiques de surface (11), dans lequel une électrode IDT (3) est formée par remplissage d'une rainure (1b) de la surface supérieure (1a) d'un substrat LiNbO3 (1), comprend la rainure (1b) formée dans la surface supérieure (1a) et présente des angles d'Euler compris dans la plage (0°, 80°-130°, 0°) avec un métal présentant une densité supérieure à celle de l'aluminium. La rainure (1b) s'étend dans le même sens que le doigt de l'électrode IDT (3), les surfaces latérales (1b1, 1b2) de la rainure (1b) dans sa section transversale sont inclinées, un angle d'inclination (A) qui est l'angle formé avec la surface latérale (1b1, 1b2) forme la surface étendue (1b4) du fond (1b3) de la rainure se trouve dans la plage comprise entre 56° et 84°, et le travail de l'électrode IDT (3) est de 0,45 ou moins.
PCT/JP2013/076540 2012-10-05 2013-09-30 Dispositif à ondes élastiques de surface WO2014054580A1 (fr)

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WO2017068877A1 (fr) * 2015-10-23 2017-04-27 株式会社村田製作所 Dispositif à ondes élastiques, circuit frontal à haute fréquence, et dispositif de communication
KR20210145804A (ko) 2019-04-03 2021-12-02 도호쿠 다이가쿠 고차 모드 표면 탄성파 디바이스
WO2021246454A1 (fr) * 2020-06-03 2021-12-09 株式会社村田製作所 Dispositif à ondes élastiques

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WO2017068877A1 (fr) * 2015-10-23 2017-04-27 株式会社村田製作所 Dispositif à ondes élastiques, circuit frontal à haute fréquence, et dispositif de communication
US10425116B2 (en) 2015-10-23 2019-09-24 Murata Manufacturing Co., Ltd. Elastic wave device, high frequency front-end circuit, and communication apparatus
KR20210145804A (ko) 2019-04-03 2021-12-02 도호쿠 다이가쿠 고차 모드 표면 탄성파 디바이스
DE112020001723T5 (de) 2019-04-03 2021-12-16 Tohoku University Akustische oberflächenwellenvorrichtungen hoher ordnung
WO2021246454A1 (fr) * 2020-06-03 2021-12-09 株式会社村田製作所 Dispositif à ondes élastiques

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