WO2014050428A1 - Dispositif de nettoyage de substrat et procédé de nettoyage de substrat - Google Patents

Dispositif de nettoyage de substrat et procédé de nettoyage de substrat Download PDF

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Publication number
WO2014050428A1
WO2014050428A1 PCT/JP2013/073289 JP2013073289W WO2014050428A1 WO 2014050428 A1 WO2014050428 A1 WO 2014050428A1 JP 2013073289 W JP2013073289 W JP 2013073289W WO 2014050428 A1 WO2014050428 A1 WO 2014050428A1
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WO
WIPO (PCT)
Prior art keywords
substrate
gas
processing container
cleaning
wafer
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Application number
PCT/JP2013/073289
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English (en)
Japanese (ja)
Inventor
土橋　和也
宏史 長池
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東京エレクトロン株式会社
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Publication of WO2014050428A1 publication Critical patent/WO2014050428A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations

Definitions

  • the present invention relates to a substrate cleaning apparatus and a substrate cleaning method for cleaning a substrate in a manufacturing process of, for example, a semiconductor device.
  • a substrate such as a semiconductor wafer is cleaned.
  • dip cleaning has been performed in which a plurality of substrates are immersed and cleaned in a large immersion tank.
  • single-wafer type spin cleaning is becoming mainstream (for example, Japanese Patent Application Laid-Open No. 2009-71272).
  • Single-wafer spin cleaning is capable of uniformly cleaning the surface of large-sized substrates, reducing the reattachment of contaminants removed by cleaning, and reducing the amount of cleaning liquid and rinsing pure water used.
  • Ultrasonic waves are widely used for spin cleaning type substrate cleaning. This discharges the cleaning liquid from the ultrasonic nozzle onto the surface of the substrate while rotating the substrate in the cleaning chamber, and oscillates the ultrasonic vibrator built in the ultrasonic nozzle. Then, the ultrasonic wave is propagated to the substrate surface through the liquid film of the cleaning liquid, and the substrate surface is cleaned by using physical force such as collision of liquid due to vibration energy of the ultrasonic wave and centrifugal force. The cleaning liquid discharged on the surface of the substrate moves outward in the radial direction of the substrate along with particles separated by ultrasonic vibration due to the centrifugal force accompanying the rotation of the substrate, and flows out from the peripheral portion of the substrate into the cleaning chamber.
  • the two-fluid spray method is known as a widely used method.
  • particles are removed by generating minute droplets from a spray nozzle and colliding with a substrate, but it is difficult to remove minute particles of 50 nm or less. This is because there is almost no flow of water in the vicinity of the boundary between the substrate and water, and an effective force for removing particles cannot be given.
  • the use of pure water causes problems such as material loss due to dissolution of the water-soluble material on the substrate surface, and the need for a large amount of isopropyl alcohol in the drying step after cleaning.
  • the present invention provides a substrate cleaning apparatus and a substrate cleaning method capable of effectively removing particles on the substrate surface using ultrasonic waves.
  • a substrate cleaning apparatus includes a processing container that accommodates a substrate, a substrate holding device that rotatably holds the substrate in the processing container, and a gas introduction device that introduces a concentration-adjusted gas into the processing container. And a detection device that detects a gas concentration in the processing container, and an ultrasonic generator that generates ultrasonic waves and propagates the ultrasonic waves to the surface of the substrate held by the substrate holding device. Then, the substrate cleaning apparatus of the present invention introduces the gas whose concentration is adjusted in the processing container by the gas introduction device, and generates the ultrasonic wave while adjusting the gas concentration in the processing container. The substrate is cleaned by ultrasonic waves.
  • the substrate cleaning apparatus of the present invention may further include a cooling device for cooling the substrate.
  • the gas introduction device may include a vaporization device that vaporizes a liquid and a flow rate adjusting device that supplies the vaporized gas into the processing container at a predetermined flow rate.
  • the gas whose concentration is adjusted may be air containing moisture.
  • the substrate cleaning apparatus of the present invention further includes a control unit that adjusts the concentration and / or flow rate of the gas introduced into the processing container by the gas introduction device based on the gas concentration detected by the detection device. It may be.
  • the substrate cleaning method of the present invention cleans a substrate using ultrasonic waves generated by an ultrasonic generator.
  • the substrate is carried into a processing container and is rotatably held by a substrate holding device.
  • the substrate cleaning method of the present invention may further include a step of cooling the substrate before the step of cleaning the substrate.
  • the substrate cleaning method of the present invention may continue cooling the substrate during the step of cleaning the substrate.
  • the gas whose concentration is adjusted may be air containing moisture.
  • the moisture concentration in the processing container is less than the saturated water vapor amount at the atmospheric temperature in the apparatus.
  • gas molecules with a thickness of several molecular layers are attached to the surface of the substrate by introducing a gas whose concentration is adjusted in the processing vessel by the gas introduction device and adjusting the gas concentration in the processing vessel. Perform ultrasonic cleaning in the condition. Thereby, particles on the substrate surface can be effectively removed without causing pattern collapse or material loss due to ultrasonic waves.
  • FIG. 4 is a schematic diagram for explaining a change in the state of the wafer surface caused by the cleaning method according to the embodiment of the present invention, and shows a state in which water molecules are attached to the surface of the wafer W;
  • FIG. 5 is a schematic diagram for explaining a change in the state of the wafer surface caused by the cleaning method according to the embodiment of the present invention, and shows a state in which ultrasonic waves are propagated to the surface of the wafer W; It is a schematic diagram explaining the washing
  • FIG. 1 is a longitudinal sectional view showing a schematic configuration of a cleaning apparatus 100 according to the present embodiment.
  • the cleaning apparatus 100 is a processing container 1 capable of sealing the inside, and a substrate holding apparatus that is provided in the processing container 1 and holds a semiconductor wafer (hereinafter simply referred to as “wafer”) W that is an object to be processed.
  • the spin chuck 10 is provided.
  • the cleaning apparatus 100 includes a gas introduction device 20 that introduces a gas whose concentration is adjusted into the processing container 1, and a gas concentration sensor 30 as a detection device that detects the gas concentration in the processing container 1. .
  • the cleaning apparatus 100 includes an ultrasonic generator 40 that generates ultrasonic waves and propagates the ultrasonic waves to the surface of the wafer W held by the spin chuck 10, and a cooling device 50 that cools the wafer W. Yes. Furthermore, the cleaning apparatus 100 includes a control unit 60 that controls each component in the cleaning apparatus 100.
  • the cleaning apparatus 100 introduces a gas whose concentration is adjusted into the processing container 1 by the gas introduction apparatus 20, and adjusts the gas concentration in the processing container 1 while using the ultrasonic wave generated by the ultrasonic generator 40 to adjust the wafer. W is washed.
  • the processing container 1 includes a top plate 1a, a side wall 1b, and a bottom wall 1c.
  • the processing container 1 is made of a material such as aluminum or SUS, for example.
  • a loading / unloading port for the wafer W is formed on one side surface of the processing container 1, and an opening / closing shutter is provided at the loading / unloading port.
  • a spin chuck 10 is provided inside the processing container 1 as a rotation holding member that holds the wafer W by suction.
  • the spin chuck 10 has a horizontal upper surface, and a suction port (not shown) for sucking, for example, the wafer W is provided on the upper surface. The wafer W can be sucked and held on the spin chuck 10 by suction from the suction port.
  • the spin chuck 10 is connected to the drive unit 11 through a support 10a.
  • the drive unit 11 includes a rotation drive unit such as a motor, and can rotate the wafer W held by the spin chuck 10 in a horizontal direction at a predetermined speed by rotating the support column 10a.
  • the drive part 11 has a raising / lowering drive part, such as a cylinder, for example, and can move the spin chuck 10 containing the support
  • a guide ring 12 is provided on the lower side of the spin chuck 10, and the outer peripheral edge of the guide ring 12 is bent downward and extends.
  • a cup 13 is provided outside the spin chuck 10, the wafer W held by the spin chuck 10, and the guide ring 12 so as to surround the spin chuck 10. The cup 13 can receive and collect particles scattered or dropped from the wafer W.
  • the upper portion of the cup 13 is formed with an opening 13a larger than the wafer W so that the spin chuck 10 holding the wafer W can move up and down. Further, a gap 14 serving as a discharge path is formed between the inner peripheral surface of the cup 13 and the bent outer peripheral edge of the guide ring 12.
  • the lower part of the cup 13 forms a gas-liquid separation part by forming a curved path together with the outer peripheral edge part of the guide ring 12.
  • An exhaust port 15 for exhausting the atmosphere in the cup 13 is formed in the inner region of the bottom of the cup 13, and an exhaust pipe 15 a is connected to the exhaust port 15. Further, a drain port 16 for discharging the collected liquid is formed in the outer region of the bottom portion of the cup 13, and a drain tube 16 a is connected to the drain port 16.
  • the gas introduction device 20 introduces a gas whose concentration is adjusted into the processing container 1.
  • the gas introduction device 20 includes a carrier gas source 21, a vaporizer 22 that vaporizes a liquid while introducing the carrier gas from the carrier gas source 21, and a pipe 23 that connects the carrier gas source 21 and the vaporizer 22. And a valve 24 provided in the pipe 23.
  • the gas introduction device 20 includes a pipe 25 that supplies the gas vaporized by the vaporizer 22 into the processing container 1 and a flow rate adjusting device (mass flow controller (MFC)) that is provided in the pipe 25 and adjusts the flow rate of the supplied gas. ) 26 and a valve 27 provided in the pipe 25.
  • MFC mass flow controller
  • the gas introduction device 20 is connected to a gas introduction port 28 provided on the side wall 1 b of the processing container 1 by a pipe 25.
  • the cleaning apparatus 100 may include, for example, a purge gas introduction apparatus for purging the inside of the processing container 1 as a gas introduction mechanism other than the gas introduction apparatus 20.
  • the gas introduced into the processing container 1 by the gas introduction device 20 include organic solvents such as air containing moisture, nitrogen gas containing moisture, and methanol.
  • the gas concentration in the processing container 1 can be strictly managed by introducing the gas whose concentration is adjusted into the processing container 1 by the gas introduction device 20. Further, the gas concentration in the processing container 1 can be detected by a gas concentration sensor 30 mounted so as to be exposed to the internal atmosphere via the side wall 1 b of the processing container 1. For example, when the gas introduced into the processing container 1 by the gas introducing device 20 is air containing moisture or nitrogen gas containing moisture, a hygrometer is used as the gas concentration sensor 30.
  • the ultrasonic generator 40 generates an ultrasonic wave, applies the ultrasonic wave to the surface of the wafer W held by the spin chuck 10, and propagates it.
  • the ultrasonic generator 40 includes an ultrasonic wave application head 41 including a vibrator (not shown), an arm member 42 that holds the ultrasonic wave application head 41, a head drive unit 43 that moves the ultrasonic wave application head 41, and an ultrasonic wave And an ultrasonic oscillator 44 that outputs a pulse signal toward the applying head 41.
  • the head drive unit 43 moves the ultrasonic wave application head 41 relative to the wafer W while keeping the distance between the ultrasonic wave application head 41 and the surface of the wafer W constant.
  • the ultrasonic oscillator 44 outputs a pulse signal to a vibrator (not shown) of the ultrasonic wave application head 41 based on a control signal from the control unit 60. As a result, the vibrator vibrates ultrasonically, and ultrasonic vibration is applied to the surface of the wafer W.
  • the ultrasonic wave application head 41 since the ultrasonic wave application head 41 is used in a gas phase, it is preferable to use an ultrasonic wave application head 41 having an amplification facility (for example, a horn) or a heat propagation type vibrator.
  • the cooling device 50 includes nozzles 51A and 51B, a refrigerant source 52 that supplies refrigerant to the nozzles 51A and 51B, and refrigerant supply pipes 53A and 53B that connect the nozzles 51A and 51B and the refrigerant source 52.
  • the nozzle 51 ⁇ / b> A is arranged so that the coolant can be supplied to the back surface of the peripheral edge of the wafer W.
  • the nozzle 51B is arranged so that the coolant can be supplied toward the back surface of the central portion of the wafer W through the coolant supply pipe 53B inserted into the support column 10a.
  • the cooling device 50 can cool the wafer W by supplying the coolant cooled to a predetermined temperature from the coolant source 52 and spraying the coolant onto the back surface of the wafer W from the nozzles 51A and 51B.
  • the refrigerant for example, He gas, CO 2 gas, or the like can be used.
  • the wafer W may be cooled by, for example, a chiller mechanism.
  • Each end device (for example, the spin chuck 10, the gas introduction device 20, the gas concentration sensor 30, the ultrasonic generator 40, the cooling device 50, etc.) constituting the cleaning device 100 is connected to the control unit 60 and controlled. It has become.
  • the control unit 60 having a computer function includes a controller 61 having a CPU, a user interface 62 and a storage unit 63 connected to the controller 61.
  • the user interface 62 includes a keyboard and a touch panel on which a process manager manages command input to manage the cleaning apparatus 100, a display that visualizes and displays the operating status of the cleaning apparatus 100, and the like.
  • the storage unit 63 stores a recipe in which a control program (software) for realizing various processes executed by the cleaning apparatus 100 under the control of the controller 61 and processing condition data are recorded. Then, if necessary, an arbitrary control program or recipe is called from the storage unit 63 by an instruction from the user interface 62 and is executed by the controller 61, so that the processing container of the cleaning apparatus 100 is controlled under the control of the controller 61. A desired cleaning process is performed within 1.
  • the controller 61 instructs each end device to operate or stop under the conditions defined in the recipe. For example, the controller 61 sends a control signal to the gas introduction device 20 in order to keep the gas concentration in the processing container 1 within a range based on the recipe, and instructs the operation and stop, as well as the gas introduced into the processing container 1 Adjust the flow rate and concentration. In this case, the controller 61 can also perform feedback control on the gas supply device 20 with reference to the signal of the detected value of the gas concentration in the processing container 1 detected by the gas concentration sensor 30. The controller 61 also sends a control signal to the spin chuck 10, the ultrasonic generator 40, the cooling device 50, etc. to instruct operation or stop, and the processing container 1 detected by the gas concentration sensor 30.
  • the controller 61 can adjust the oscillation frequency or vibration amplitude of the ultrasonic wave generated by the ultrasonic generator 40 according to the detected value of the gas concentration in the processing container 1 detected by the gas concentration sensor 30. it can.
  • the controller 61 can also send a control signal to the drive unit 11 to adjust the rotation speed of the spin chuck 10 in accordance with the detected value of the gas concentration in the processing container 1 detected by the gas concentration sensor 30.
  • the controller 61 adjusts the cooling temperature of the wafer W by the cooling device 50 according to the detected value of the gas concentration in the processing container 1 detected by the gas concentration sensor 30, so that the temperature of the refrigerant, the injection amount, etc. It can also be adjusted.
  • the recipes such as the control program and the processing condition data can be used by installing the recipe stored in the computer-readable recording medium 64 in the storage unit 63.
  • the computer-readable recording medium 64 is not particularly limited, and for example, a CD-ROM, a hard disk, a flexible disk, a flash memory, a DVD, or the like can be used. Further, the recipe can be transmitted from other devices as needed via, for example, a dedicated line and used online.
  • a cleaning process using the ultrasonic waves generated by the ultrasonic generator 40 is performed on the wafer W.
  • the cleaning process in the cleaning apparatus 100 includes, for example, a process of carrying the wafer W into the processing container 1 and holding the wafer W rotatably by the spin chuck 10, introducing a gas into the processing container 1, and a gas concentration in the processing container 1.
  • the wafer W is cleaned by generating ultrasonic waves by the ultrasonic generator 40 while propagating the wafer W and propagating the ultrasonic waves to the surface of the wafer W held by the spin chuck 10. And a process.
  • each step will be described.
  • the wafer W is loaded by an external transfer device with the loading / unloading port (not shown) of the processing container 1 opened.
  • the spin chuck 10 is configured to be movable up and down by the drive unit 11 as described above, and transfers the wafer W to and from an external transfer device at the raised position.
  • the wafer W is lowered while being held on the spin chuck 10 and set at the cleaning position.
  • a gas having a predetermined concentration is introduced into the processing container 1 by the gas introduction device 20. That is, the valve 24 of the pipe 23 and the valve 27 of the pipe 25 are opened, and the carrier gas is introduced into the vaporizer 22 from the carrier gas source 21.
  • the gas vaporized by the vaporizer 22 is supplied into the processing container 1 through the gas inlet 28 while the flow rate of the gas is adjusted by the mass flow controller 26.
  • carrier gas dry air, dry nitrogen gas, etc. can be used, for example.
  • examples of the liquid stored in the vaporizer 22 and to be vaporized include distilled water and organic solvents.
  • the gas concentration in the processing container 1 is stabilized by continuing to supply the gas for 10 seconds to 300 seconds, for example.
  • the humidity in the processing container 1 is, for example, 0.1% or more. It is preferable to adjust so that it may become less than the saturated water vapor amount in the atmospheric temperature in the container 1.
  • FIG. When the humidity in the processing container 1 is less than 0.1%, it is difficult to attach water molecules to the surface of the wafer W with high efficiency. As a result, a liquid film is formed. In the present embodiment, no special control is required for the pressure in the processing container 1, and atmospheric pressure is preferable.
  • the driving unit 11 is driven to generate ultrasonic waves by the ultrasonic generator 40 while rotating the wafer W held by the spin chuck 10 at a predetermined speed, and the surface of the wafer W held by the spin chuck 10 is generated.
  • the wafer W is cleaned by propagating ultrasonic waves.
  • a pulse signal is output from the ultrasonic oscillator 44 toward the ultrasonic wave application head 41 to apply ultrasonic vibration to the surface of the wafer W.
  • the arm member 42 is moved by the head drive unit 43, and the ultrasonic wave application head 41 is scanned in the radial direction of the rotating wafer W.
  • the vibration frequency of the ultrasonic wave applied from the ultrasonic wave application head 41 to the surface of the wafer W is preferably within the range of the sound pressure on the surface of the wafer W of 1 ⁇ 10 4 Pa or more and 1 ⁇ 10 6 Pa or less.
  • the rotational speed of the wafer W is preferably in the range of, for example, 100 rpm or more and 1000 rpm or less from the viewpoint of efficiently scattering particles peeled off by ultrasonic waves in the outer diameter direction of the wafer W by centrifugal force.
  • FIGS. 2 to 5B are schematic diagrams for explaining a change in the state of the surface of the wafer W caused by the cleaning method of the present embodiment.
  • a case where air containing a predetermined concentration of water is introduced into the processing container 1 will be described as an example.
  • 5A and 5B are schematic views for explaining the surface state of the wafer W in the cleaning method of the comparative example.
  • FIG. 2 shows a state before cleaning. In this state, the humidity in the processing container 1 is not adjusted. A plurality of fine particles 101 are attached to the surface of the wafer W.
  • FIG. 3 shows a state in which water molecules 102 are attached to the surface of the wafer W. This state is such that water molecules 102 of several layers, for example, 5 layers or less, preferably about 2 to 3 molecular layers are attached to the surface of the wafer W, and a liquid film is formed (completely wet state). ) Is different. The amount of adhesion is indistinguishable from the dry state by visual inspection.
  • air containing a predetermined concentration of moisture is introduced into the processing container 1 by the gas introduction device 20, and the humidity in the processing container 1 is set to the above-described humidity. Can be produced by controlling within range.
  • an ultrasonic wave U is generated by the ultrasonic wave generator 40, and the ultrasonic wave is propagated from the ultrasonic wave application head 41 to the surface of the wafer W held on the spin chuck 10.
  • the particles 101 existing on the surface of the wafer W are effectively removed by physical force due to ultrasonic vibration. And can be removed from the surface of the wafer W.
  • the particles 101 scattered or dropped from the wafer W by the centrifugal force of rotation are received by the cup 13 and fall to the bottom of the cup 13 through the gap 14.
  • the dropped particles can be collected from the drain 16 by washing the inside of the cup 13 with water or the like.
  • the time for ultrasonic cleaning is not particularly limited, but can be, for example, in the range of 1 minute to 10 minutes.
  • the cleaning method of the present embodiment can include arbitrary steps other than those described above.
  • a coolant for example, He gas cooled to a predetermined temperature
  • the temperature of the wafer W at the time of ultrasonic cleaning may be within a range of, for example, 0 ° C. or more and 200 ° C. or less.
  • the temperature of the wafer W is 10 It is preferable to cool within a range up to a temperature as low as about ° C.
  • molecules for example, water molecules contained in the gas are likely to adhere to the surface of the wafer W, and several layers are formed. Gas molecules having a thickness can be efficiently formed on the surface of the wafer W.
  • the cooling of the wafer W is continuously performed by the cooling device 50 while the ultrasonic wave is applied to the wafer W by the ultrasonic generator 40.
  • FIG. 5A shows a case where ultrasonic cleaning is performed in a state where a large amount of water 200 exists on the surface of the wafer W.
  • a dip method in which the wafer W is immersed in water, or an ultrasonic wave U is applied in a state where a liquid film having a thickness of about several millimeters is formed while dripping water 200 onto the surface of the wafer W fixed to the spin chuck 10.
  • a spin cleaning method can be mentioned.
  • FIG. 5B shows a dry cleaning method in which ultrasonic cleaning is performed in a state where the surface of the wafer W is completely dried.
  • the sound pressure on the surface of the wafer W is, for example, 1 as an ultrasonic generator. Since particles having a size of about ⁇ 10 5 to 5 ⁇ 10 5 Pa can be used, the removal efficiency of the particles 101 is high due to a large physical force.
  • An example of such an ultrasonic generator is a quartz vibrator type washer (model W-357-1 MQB-CV) manufactured by Hyundai Electronics Co., Ltd.
  • the pattern formed on the surface of the wafer W is greatly damaged, and material loss due to elution of the water-soluble material becomes a problem.
  • an ultrasonic generator having an amplification facility (horn) in the subsequent stage of the vibrator or a device having a heat propagation vibrator is used.
  • the sound pressure on the surface of the wafer W remains at, for example, about 2 ⁇ 10 2 Pa
  • an ultrasonic generator that can generate a large sound pressure used in the wet cleaning method for example, the quartz vibrator type cleaning machine (model W-357-1 MQB-CV) manufactured by Hyundai Electronics Co., Ltd.) is used in the air.
  • the vibrator is abnormally heated and cannot be used in the dry cleaning method.
  • the magnitude of the sound pressure generated by the ultrasonic vibration depends on the molecular density on the surface of the wafer W.
  • the ultrasonic wave U is propagated through several layers of water molecules 102.
  • the sound pressure applied to the particles 101 can be increased to, for example, about 1 ⁇ 10 6 Pa at the maximum. That is, by adhering several layers of water molecules 102 to the surface of the wafer W, an ultrasonic generator that is normally used in the dry cleaning method is used to generate a larger sound pressure than in the dry cleaning method. It becomes possible to add to.
  • the cleaning method of the present embodiment the particles 101 existing on the surface of the wafer W can be effectively peeled and efficiently removed from the surface of the wafer W.
  • the gas whose concentration is adjusted in the processing container 1 by the gas introduction device 20 is introduced, and the gas concentration in the processing container 1 is adjusted.
  • ultrasonic cleaning can be performed in a state where gas molecules having a thickness of several molecular layers are attached to the surface of the wafer W.
  • particles on the surface of the wafer W can be effectively removed without causing pattern collapse or material loss due to ultrasonic waves.
  • the present invention is not limited to a case where a semiconductor wafer is used as an object to be processed, and can be applied to a case where, for example, a solar cell panel substrate or a flat panel display substrate is used as an object to be processed.
  • the gas introduction device 20 is not limited to the bubbling vaporizer 22 having the configuration shown in FIG. 1 as long as it can generate a gas having a predetermined concentration.

Abstract

L'invention concerne un dispositif de nettoyage (100) qui comporte un récipient de traitement (1) ayant un intérieur scellable, un mandrin rotatif (10) disposé à l'intérieur du récipient de traitement (1) et servant à maintenir une plaquette (W) à traiter, un dispositif d'introduction de gaz (20) permettant d'introduire un gaz à concentration régulée dans le récipient de traitement (1), un capteur de concentration de gaz (30) servant de détecteur permettant de détecter la concentration de gaz à l'intérieur du récipient de traitement (1) et un générateur ultrasonique (40) permettant de générer des ondes ultrasoniques et de propager les ondes ultrasoniques à la surface de la plaquette (W) maintenue par le mandrin rotatif (10).
PCT/JP2013/073289 2012-09-26 2013-08-30 Dispositif de nettoyage de substrat et procédé de nettoyage de substrat WO2014050428A1 (fr)

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JP2012212271A JP2014067864A (ja) 2012-09-26 2012-09-26 基板洗浄装置及び基板洗浄方法

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JP6571942B2 (ja) * 2015-02-05 2019-09-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR101771527B1 (ko) * 2016-02-16 2017-08-29 주식회사 이오테크닉스 초음파 클리닝 장치 및 이를 이용한 초음파 클리닝 방법

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JP2004538635A (ja) * 2001-08-06 2004-12-24 セミトゥール・インコーポレイテッド 半導体ウエハなどのワークピースを取り扱う処理および装置
JP2004247752A (ja) * 2004-04-14 2004-09-02 Pre-Tech Co Ltd クローズドマニュファクチャリング装置およびこの装置を用いて被洗浄基板を処理する方法

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CN113640216A (zh) * 2021-09-14 2021-11-12 鞍钢股份有限公司 一种评价带锈钢样锈层附着力的装置及方法

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