WO2014047888A1 - 对基板进行烤焙处理的装置及方法 - Google Patents

对基板进行烤焙处理的装置及方法 Download PDF

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Publication number
WO2014047888A1
WO2014047888A1 PCT/CN2012/082355 CN2012082355W WO2014047888A1 WO 2014047888 A1 WO2014047888 A1 WO 2014047888A1 CN 2012082355 W CN2012082355 W CN 2012082355W WO 2014047888 A1 WO2014047888 A1 WO 2014047888A1
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WIPO (PCT)
Prior art keywords
support
substrate
support platform
baking
pins
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Ceased
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PCT/CN2012/082355
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English (en)
French (fr)
Inventor
朱美娜
戴裔
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US13/704,300 priority Critical patent/US20140178056A1/en
Publication of WO2014047888A1 publication Critical patent/WO2014047888A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/007—Other surface treatment of glass not in the form of fibres or filaments by thermal treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0085—Drying; Dehydroxylation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/009—Heating devices using lamps heating devices not specially adapted for a particular application

Definitions

  • the present invention relates to the technical field of liquid crystal displays, and in particular, to an apparatus and method for baking a substrate.
  • a pre-baked (Prebake) PI (Polyimide) liquid on a glass substrate is required.
  • the baking method is to heat the glass substrate to 90 by using an infrared radiation glass substrate. Celsius, the solvent in the PI solution is evaporated to increase the concentration of PI.
  • the support pin is generally used to support the glass substrate, but since the material of the support pin is not completely insulated, the contact area on the glass substrate (the area on the glass substrate that is in contact with the support member) is non-contact.
  • the area (the area on the glass substrate that is not in contact with the support member) has a difference in the heat transfer rate, so that the glass substrate is unevenly heated, causing a defect of the surface (Mura) on the glass substrate, which lowers the yield of the glass substrate.
  • one is to use a material with better thermal insulation properties as a material for supporting the needle, so as to reduce the temperature of the region on the glass substrate and the contact pin and other regions.
  • the second is to improve the support of the support pin, for example, by controlling a plurality of support pins to alternately support the glass substrate to reduce the contact time between the support pin and the glass substrate in the same place, that is, first use some support pins to support the glass substrate, Other support pins are used to support the glass substrate after a predetermined time has elapsed.
  • Both of the above solutions can not effectively prevent spots on the glass substrate, because: The above two technical solutions can not prevent the existence of temperature difference between different regions on the glass substrate; Second, in the above two technical solutions, support The needle supporting the glass substrate causes the pressure of the glass substrate to contact the support pin to be too large, thereby causing the glass substrate to deform, causing the glass substrate to be unevenly heated, and spots appear during the baking process. 3. In the above two technical solutions, the support The needle is needle-shaped, which is not conducive to maintaining the flatness of the glass substrate during the baking process, and is likely to cause spots on the glass substrate to appear in the Halo region.
  • An object of the present invention is to provide an apparatus for baking a substrate which can effectively prevent spot defects from occurring on a substrate.
  • Another object of the present invention is to provide a method of baking a substrate which can effectively prevent the occurrence of speckle defects in the baking process of the substrate.
  • a preferred embodiment of the present invention provides an apparatus for baking a substrate, comprising: a support platform, a plurality of support pins, a heating unit, and a heat insulating layer.
  • the support platform has a support surface and a bottom surface.
  • the plurality of support pins are disposed in the support platform, and the plurality of support pins are movably protruded from the support surface for jacking up the substrate.
  • the heating unit is for heating the substrate.
  • the heat insulating layer is disposed corresponding to the bottom surface of the support platform for preventing the heating unit from heating the support platform.
  • the heating unit includes a first electric heating plate and a second electric heating plate, and the first electric heating plate is disposed on the plurality of supporting pins. And the substrate is located between the first electric heating plate and the support pin; the second electric heating plate is disposed under the support platform and faces the bottom surface of the support platform.
  • the heat insulating layer is used to insulate the second hot plate to heat the support platform.
  • the heat insulating layer is made of a porous material, a heat reflective material, or a vacuum material.
  • the support platform is provided with a plurality of through holes for receiving the plurality of support pins.
  • the substrate is jacked up by the plurality of support pins; when the plurality of support pins are received in the plurality of through holes, the substrate is Placed on the support surface.
  • the heating unit stops heating; when the substrate is placed on the support surface, the heating unit performs heating.
  • Another object of the present invention is to provide a method of baking a substrate which can effectively prevent the occurrence of speckle defects in the baking process of the substrate.
  • a preferred embodiment of the present invention provides a method for baking a substrate, which utilizes a support platform, a plurality of support pins disposed in the support platform, and a heating unit; the method includes the following steps Extending the plurality of support pins to a support surface of the support platform; placing the substrate on the plurality of support pins; retracting the plurality of support pins in the support platform, such that The substrate is placed on the support surface; a heat insulating layer is disposed on a bottom surface corresponding to the support platform; and the substrate is heated by the heating unit.
  • the heating step includes: disposing a first electric heating plate on the plurality of support pins, and the substrate is located on the first electric heating plate and Between the support pins; and placing a second electric heating plate under the support platform and facing the bottom surface of the support platform.
  • the heat insulating layer is disposed between the second hot plate and the support platform.
  • the present invention lowers the support pin before heating, so that the substrate directly contacts the support surface of the support platform, that is, the point contact in the prior art is changed into a surface contact. Therefore, when the heating unit heats the substrate, heat transfer unevenness caused by point contact of the support pin does not occur, and the problem of occurrence of a work point defect on the substrate is overcome. At the same time, the heat transfer of the second hot plate to the support platform is blocked by the heat insulating layer, and the support platform and the support pin are not caused by the temperature difference caused by the uneven heating, so that the temperature of the support surface is kept consistent. Therefore, the surface of the substrate placed on the support surface of the support platform can be evenly baked by the first electric heating plate, and the formation of spot defects of the PI film is eliminated.
  • FIG. 1 is a schematic cross-sectional view showing an apparatus for baking a substrate according to a preferred embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view showing the apparatus for baking the substrate of FIG. 1 for baking;
  • FIG. 3 is a cross-sectional view showing an apparatus for baking a substrate according to another preferred embodiment of the present invention.
  • FIG. 4 is a flow chart of a method of baking a glass substrate in a preferred embodiment of the present invention.
  • the apparatus 100 for baking a substrate of the preferred embodiment includes a support platform 120, a plurality of support pins 140, a heating unit 160, and a heat insulating layer 180. It should be noted that the present invention does not limit the material of the substrate 150.
  • the substrate may be a glass substrate or a flexible substrate made of plastic.
  • the substrate 150 has a layer of alignment film solution 155 to be baked.
  • the support platform 120 is disposed in a heating chamber (not shown), and the support platform 120 has a support surface 122 and a bottom surface 124.
  • the support platform 120 defines a plurality of through holes 126 for receiving the plurality of support pins 120.
  • the through hole 126 penetrates the support surface 122 and the bottom surface 124.
  • the through hole 126 may also be opened only on the support surface 122.
  • FIG. 2 is a schematic cross-sectional view showing the apparatus for baking the substrate of FIG.
  • the plurality of support pins 140 are disposed in the support platform 120, and the plurality of support pins 140 are movably protruded from the support surface 122 for jacking up the substrate 150. Further, the plurality of support pins 140 can be connected to a driving device (not shown), for example, to drive the support pin 140 to extend out of the support surface 122 or to recover the support platform 120 in an electric, hydraulic or pneumatic manner.
  • the heating unit 160 is configured to heat the substrate 150.
  • the heating unit 160 includes a first hot plate 162 and a second hot plate 164.
  • the first hot plate 162 is disposed on the plurality of support pins 140, and the substrate 150 is located between the first hot plate 162 and the support pin 140; the second hot plate 164 is disposed on The support platform 120 is below and facing the bottom surface 124 of the support platform 120.
  • the substrate 150 is jacked up by the plurality of support pins 140; when the plurality of support pins 140 are received
  • the substrate 150 is placed on the support surface 122 when the plurality of through holes 126 are formed.
  • the heating unit 160 stops heating.
  • the heating unit performs heating.
  • the heat insulating layer 180 is disposed corresponding to the bottom surface 124 of the support platform 120 for preventing the heating unit 160 from heating the support platform 120, wherein the radiant heat is indicated by an arrow.
  • the heat insulating layer 180 is made of a porous material, a heat reflective material, or a vacuum material.
  • the heat insulating layer 180 is used to insulate the second hot plate 164 to heat the support platform, so that the temperature on the support surface 122 of the support platform 120 is kept uniform. Therefore, when the first heating plate 162 heats the substrate 150, the contact surface of the substrate 150 with the support platform 120 is not affected by the heat transfer medium and causes uneven heating.
  • FIG. 3 is a cross-sectional view showing an apparatus for baking a substrate according to another preferred embodiment of the present invention.
  • the apparatus 200 for baking a substrate of the present embodiment includes a plurality of support platforms 120, a plurality of support pins 140, a plurality of heating units 160, and a plurality of heat insulating layers 180.
  • the support platform 120 has a support surface 122 and a bottom surface 124.
  • the plurality of support pins 140 are disposed in the support platform 120, and the plurality of support pins 140 are movably protruded from the support surface 122 (as shown in FIG. 1) for jacking up the substrate 150.
  • the heating unit 160 is configured to heat the substrate 150.
  • the heat insulating layer 180 is disposed corresponding to the bottom surface 124 of the support platform 120 for preventing the heating unit 160 from heating the support platform 120.
  • the heating unit 160 includes a first electric heating plate 162, a second electric heating plate 164, a third electric heating plate 166, and the like.
  • the heat insulating layer 180 is used to insulate the second hot plate 164 to heat the support platform 120.
  • the second hot plate 164 can heat the lower substrate 150'.
  • the lower heat insulating layer 180' is used to insulate the third electric heating plate 166 from heating the support platform 120' of the lower layer. It can be seen from the above that the apparatus 200 for baking the substrate of the present embodiment can simultaneously bake the plurality of substrates 150 and eliminate the formation of speckle defects.
  • FIG. 4 is a flow chart of a method for baking a glass substrate according to a preferred embodiment of the present invention.
  • the method for baking the glass substrate in the preferred embodiment of the present invention utilizes the support platform 120 of the above embodiment, the plurality of support pins 140 disposed in the support platform 120, and the heating unit 160.
  • the method includes starting at step S10.
  • the plurality of support pins 140 are protruded from the support surface 122 of the support platform 120.
  • the plurality of support pins 140 can be connected to a driving device (not shown), for example, electrically, hydraulically or pneumatically driving the support pins 140 to extend out of the support surface 122 or to be retracted into the support platform 120.
  • step S20 the substrate 150 is placed on the plurality of support pins 140, as shown in FIG.
  • a robotic arm (not shown) can be used to hold the substrate 150 and placed on the extended support pin 140 so that the robot arm has space to retract.
  • step S30 the plurality of support pins 140 are retracted into the support platform 120 such that the substrate 150 is placed on the support surface 122, as shown in FIG.
  • step S40 the heat insulating layer 180 is disposed on the bottom surface 124 corresponding to the support platform 120 to prevent the heating unit 160 from heating the support platform 120.
  • step S50 the substrate 150 is heated by the heating unit 160.
  • the heating step in step S50 further includes: step S52, disposing the first hot plate 162 on the plurality of support pins 140, and the substrate 150 is located in the The first hot plate 162 is disposed between the support pin 140; and in step S54, the second hot plate 164 is disposed under the support platform 120 and faces the bottom surface 124 of the support platform 120.
  • the heat insulating layer 180 is disposed between the second hot plate 164 and the support platform 120.
  • the support pin 140 is lowered prior to heating so that the substrate 150 directly contacts the support surface 122 of the support platform 120, i.e., changed from a point contact in the prior art to a surface contact. Therefore, when the heating unit 160 heats the substrate 150, heat transfer unevenness caused by the point contact of the support pins 140 does not occur, and the problem of occurrence of a work point defect on the substrate 150 is overcome. At the same time, the heat transfer of the second hot plate 164 to the support platform 120 is blocked by the heat insulating layer 180, and the support platform 120 and the support pin 140 are not caused to have a temperature difference due to uneven heating, so that the temperature of the support surface 122 is kept consistent. Therefore, the surface of the substrate 150 placed on the support surface 122 of the support platform 120 can be uniformly baked by the first electric heating plate 162, and the formation of the PI film spot defects is eliminated.

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Description

对基板进行烤焙处理的装置及方法 技术领域
本发明涉及一种液晶显示器的技术领域，特别涉及一种对基板进行烤焙处理的装置及方法。
 背景技术
传统的液晶基板的生产制造过程中需要对玻璃基板上的PI(Polyimide，聚酰亚胺)液进行预烤焙(Prebake)，烤焙的方式是利用红外线辐射玻璃基板，将玻璃基板加热到90摄氏度，使PI液中的溶剂蒸发，提高PI的浓度。在上述烤焙的过程中，一般会使用支撑针来支撑玻璃基板，但是由于支撑针的材质不是完全绝热的，因此玻璃基板上的接触区域(玻璃基板上与支撑构件接触的区域)与非接触区域(玻璃基板上没有与支撑构件接触的区域)存在导热速率的差别，使得玻璃基板受热不均，造成玻璃基板上出现斑点(Mura)缺陷，降低了玻璃基板的良率。
为了防止玻璃基板上出现斑点，现有技术上有两种解决方案：一是采用绝热性能更好的材料来作为支撑针的材料，以减少玻璃基板上和支撑针接触的区域与其它区域的温度差；二是改良支撑针的支撑方式，例如通过控制多个支撑针轮流(交替)支撑玻璃基板来减少支撑针与玻璃基板在同一个地方接触的时间，即首先使用一些支撑针支撑玻璃基板，在预定时间过后使用另一些支撑针支撑玻璃基板。
上述这两种解决方案都不能有效地防止玻璃基板上出现斑点，原因是：一、上述两种技术方案不能杜绝玻璃基板上不同区域之间温差的存在；二、上述两种技术方案中，支撑针支撑玻璃基板会使得玻璃基板与支撑针接触的区域压强过大，从而造成玻璃基板形变，使玻璃基板受热不均，在烤焙的过程中出现斑点；三、上述两种技术方案中，支撑针为针状，不利于保持玻璃基板在烤焙过程中的平坦度，容易造成玻璃基板上出现光环(Halo)区斑点。
因此，有必要提出一种新的技术方案，以解决玻璃基板上出现斑点的技术问题。
 技术问题
本发明的一个目的在于提供一种对基板进行烤焙处理的装置，其能有效防止基板上出现斑点缺陷。
本发明的另一个目的在于提供一种对基板进行烤焙处理的方法，其能有效防止基板在烤焙处理中出现斑点缺陷。
 技术解决方案
本发明优选实施例提供了一种对基板进行烤焙处理的装置，其包括：支撑平台、多个支撑针、加热单元、及绝热层。所述支撑平台具有一支撑面及一底面。所述多个支撑针设置于所述支撑平台中，所述多个支撑针可移动地伸出于所述支撑面，用于顶起所述基板。所述加热单元用于对所述基板进行加热。所述绝热层对应所述支撑平台的所述底面设置，用于防止所述加热单元对所述支撑平台加热。
在本优选实施例的对基板进行烤焙处理的装置中，所述加热单元包括一第一电热板及一第二电热板，所述第一电热板设置于所述多个支撑针之上，且所述基板位于所述第一电热板与所述支撑针之间；所述第二电热板设置于所述支撑平台之下且面对所述支撑平台的所述底面。进一步地说，所述绝热层用于隔绝所述第二电热板对所述支撑平台加热。优选地，所述绝热层是由多孔材料、热反射材料、或真空材料所制成。
在本优选实施例的对基板进行烤焙处理的装置中，所述支撑平台开设有多个通孔，所述多个通孔用于收容所述多个支撑针。当所述多个支撑针伸出于所述支撑面时，所述基板由所述多个支撑针顶起；当所述多个支撑针收容于所述多个通孔时，所述基板被放置于所述支撑面上。此外，当所述基板被顶起时，所述加热单元停止加热；当所述基板被放置于所述支撑面时，所述加热单元进行加热。
本发明的另一个目的在于提供一种对基板进行烤焙处理的方法，其能有效防止基板在烤焙处理中出现斑点缺陷。
为解决上述问题，本发明优选实施例提供了一种对基板进行烤焙处理的方法，其利用支撑平台、设置于所述支撑平台中多个支撑针、及加热单元；所述方法包括下列步骤：将所述多个支撑针伸出于所述支撑平台的支撑面；放置所述基板于所述多个支撑针上；将所述多个支撑针缩回于所述支撑平台中，使得所述基板被放置于所述支撑面上；将绝热层设置于对应所述支撑平台的底面；及采用所述加热单元对所述基板进行加热。
在本优选实施例的对基板进行烤焙处理的方法中，所述加热步骤包括：将第一电热板设置于所述多个支撑针之上，且所述基板位于所述第一电热板与所述支撑针之间；及将第二电热板设置于所述支撑平台之下且面对所述支撑平台的所述底面。具体来说，所述绝热层设置于所述第二电热板与所述支撑平台之间。
 有益效果
本发明相对现有技术，在加热前先将支撑针下降，使得基板直接接触支撑平台的支撑面上，即由现有技术中的点接触改变成面接触。因此，加热单元在对基板加热时，不会产生支撑针的点接触所造成的传热不均，克服了基板上产生班点缺陷的问题。同时，借着绝热层阻隔了第二电热板对支撑平台的传热，支撑平台及支撑针不致于因受热不均而产生温差，使得支撑面的温度保持一致。因此，放置在支撑平台的支撑面上的基板表面可均匀的受到第一电热板的烤焙，杜绝了PI膜斑点缺陷的形成。
 附图说明
图1为本发明一优选实施例的对基板进行烤焙处理的装置的剖面示意图；
图2为图1的对基板进行烤焙处理的装置进行烤焙的剖面示意图；
图3为本发明另一优选实施例的对基板进行烤焙处理的装置的剖面示意图；及
图4为本发明优选实施例中对玻璃基板进行烤焙处理的方法的流程图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。在不同图示中，相同的参考标号表示相同或相似的元件。
参照图1，图1为本发明一优选实施例的对基板进行烤焙处理的装置的剖面示意图。本优选实施例的对基板进行烤焙处理的装置100包括支撑平台120、多个支撑针140、加热单元160、及绝热层180。值得注意的是，本发明并不限制基板150的材质，基板可为玻璃基板，亦可为塑胶制的柔性基板。基板150上具有一层待烤焙的配向膜溶液155。
所述支撑平台120设置在一加热腔体(chamber)(图未示)内，且所述支撑平台120具有一支撑面122及一底面124。所述支撑平台120开设有多个通孔126，所述多个通孔用于收容所述多个支撑针120。在此实施例中，所述通孔126贯通支撑面122及底面124。然而，在其他实施例中，通孔126也可仅开设于支撑面122上。
请参照图1及图2，图2为图1的对基板进行烤焙处理的装置进行烤焙的剖面示意图。所述多个支撑针140设置于所述支撑平台120中，所述多个支撑针140可移动地伸出于所述支撑面122，用于顶起所述基板150。进一步来说，所述多个支撑针140可连接驱动装置(图未示)，例如以电力、油压或气压方式驱动支撑针140伸出支撑面122或缩回收容于所述支撑平台120。
参照图1及图2，所述加热单元160用于对所述基板150进行加热。在此实施例中，所述加热单元160包括一第一电热板162及一第二电热板164。所述第一电热板162设置于所述多个支撑针140之上，且所述基板150位于所述第一电热板162与所述支撑针140之间；所述第二电热板164设置于所述支撑平台120之下且面对所述支撑平台120的所述底面124。
请参照图1及图2，当所述多个支撑针140伸出于所述支撑面122时，所述基板150由所述多个支撑针140顶起；当所述多个支撑针140收容于所述多个通孔126时，所述基板150被放置于所述支撑面122上。如图1所示，当所述基板150被顶起时，所述加热单元160停止加热。如图2所示，当所述基板150被放置于所述支撑面时，所述加热单元进行加热。
如图2所示，所述绝热层180对应所述支撑平台120的所述底面124设置，用于防止所述加热单元160对所述支撑平台120加热，其中辐射热以箭头表示。所述绝热层180是由多孔材料、热反射材料、或真空材料所制成。在此实施例中，所述绝热层180用于隔绝所述第二电热板164对所述支撑平台加热，使得所述支撑平台120的支撑面122上的温度保持均匀。因此，第一电热板162对基板150进行加热时，基板150之与支撑平台120的接触面就不会受到传热介质的不同而造成受热不均。
值得一提的是，在其他实施例的基板烤焙的装置中，可同时烤焙多片基板150。请参照图3，图3为本发明另一优选实施例的对基板进行烤焙处理的装置的剖面示意图。
本实施例的对基板进行烤焙处理的装置200包括多个支撑平台120、多个支撑针140、多个加热单元160、及多个绝热层180。同样地，所述支撑平台120具有一支撑面122及一底面124。所述多个支撑针140设置于所述支撑平台120中，所述多个支撑针140可移动地伸出于所述支撑面122(如图1所示)，用于顶起所述基板150。所述加热单元160用于对所述基板150进行加热。所述绝热层180对应所述支撑平台120的所述底面124设置，用于防止所述加热单元160对所述支撑平台120加热。
同样地，所述加热单元160包括第一电热板162、第二电热板164、第三电热板166等依此类推。与上述实施例不同的是，所述绝热层180用于隔绝所述第二电热板164对所述支撑平台120加热。而第二电热板164可对下层的基板150’进行加热。此外，下层的绝热层180’是用于隔绝所述第三电热板166对下层的支撑平台120’加热。由上述可知，本实施例的对基板进行烤焙处理的装置200可对多片基板150同时烤焙，且可杜绝斑点缺陷的形成。
请一并参考图1、图2及图4，图4为本发明优选实施例中对玻璃基板进行烤焙处理的方法的流程图。本发明优选实施例中对玻璃基板进行烤焙处理的方法利用上述实施例之支撑平台120、设置于所述支撑平台120中多个支撑针140、及加热单元160。本方法包括开始于步骤S10。
在步骤S10中，将所述多个支撑针140伸出于所述支撑平台120的支撑面122。举例来说，所述多个支撑针140可连接驱动装置(图未示)，例如以电力、油压或气压方式驱动支撑针140伸出支撑面122或缩回收容于所述支撑平台120。
在步骤S20中，放置所述基板150于所述多个支撑针140上，如图1所示。 在此实施例中，可采用机械手臂(图未示)托住基板150，并放置于伸出的支撑针140上，使得机械手臂有空间收回。
在步骤S30中，将所述多个支撑针140缩回于所述支撑平台120中，使得所述基板150被放置于所述支撑面122上，如图2所示。
在步骤S40中，将绝热层180设置于对应所述支撑平台120的底面124，以防止所述加热单元160对所述支撑平台120加热。
在步骤S50中，采用所述加热单元160对所述基板150进行加热。
请再参照图2，需注意的是，在步骤S50中的加热步骤还包括：步骤S52，将第一电热板162设置于所述多个支撑针140之上，且所述基板150位于所述第一电热板162与所述支撑针140之间；及步骤S54，将第二电热板164设置于所述支撑平台120之下且面对所述支撑平台120的所述底面124。在此方法中，所述绝热层180设置于所述第二电热板164与所述支撑平台120之间。
综上所述，在加热前先将支撑针140下降，使得基板150直接接触支撑平台120的支撑面122上，即由现有技术中的点接触改变成面接触。因此，加热单元160在对基板150加热时，不会产生支撑针140的点接触所造成的传热不均，克服了基板150上产生班点缺陷的问题。同时，借着绝热层180阻隔了第二电热板164对支撑平台120的传热，支撑平台120及支撑针140不致于因受热不均而产生温差，使得支撑面122的温度保持一致。因此，放置在支撑平台120的支撑面122上的基板150表面可均匀的受到第一电热板162的烤焙，杜绝了PI膜斑点缺陷的形成。
虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
 本发明的实施方式
工业实用性
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Claims (15)

  1. 一种对基板进行烤焙处理的装置，包括：
    支撑平台，具有一支撑面及一底面；
    多个支撑针，设置于所述支撑平台中，所述多个支撑针可移动地伸出于所述支撑面，用于顶起所述基板；
    加热单元，包括一第一电热板及一第二电热板，所述第一电热板设置于所述多个支撑针之上，且所述基板位于所述第一电热板与所述支撑针之间；所述第二电热板设置于所述支撑平台之下且面对所述支撑平台的所述底面；以及
    绝热层，对应所述支撑平台的所述底面设置，用于隔绝所述第二电热板对所述支撑平台加热。
  2. 根据权利要求1所述的对基板烤焙的装置，其中所述绝热层是由多孔材料、热反射材料、或真空材料所制成。
  3. 根据权利要求1所述的对基板进行烤焙处理的装置，其中所述支撑平台开设有多个通孔，所述多个通孔用于收容所述多个支撑针。
  4. 根据权利要求3所述的对基板进行烤焙处理的装置，其中当所述多个支撑针伸出于所述支撑面时，所述基板由所述多个支撑针顶起；当所述多个支撑针收容于所述多个通孔时，所述基板被放置于所述支撑面上。
  5. 根据权利要求4所述的对基板烤焙的装置，其中当所述基板被顶起时，所述加热单元停止加热；当所述基板被放置于所述支撑面时，所述加热单元进行加热。
  6. 一种对基板进行烤焙处理的装置，包括：
    支撑平台，具有一支撑面及一底面；
    多个支撑针，设置于所述支撑平台中，所述多个支撑针可移动地伸出于所述支撑面，用于顶起所述基板；
    加热单元，用于对所述基板进行加热；以及
    绝热层，对应所述支撑平台的所述底面设置，用于防止所述加热单元对所述支撑平台加热。
  7. 根据权利要求6所述的对基板烤焙的装置，其中所述加热单元包括一第一电热板及一第二电热板，所述第一电热板设置于所述多个支撑针之上，且所述基板位于所述第一电热板与所述支撑针之间；所述第二电热板设置于所述支撑平台之下且面对所述支撑平台的所述底面。
  8. 根据权利要求7所述的对基板烤焙的装置，其中所述绝热层用于隔绝所述第二电热板对所述支撑平台加热。
  9. 根据权利要求6所述的对基板烤焙的装置，其中所述绝热层是由多孔材料、热反射材料、或真空材料所制成。
  10. 根据权利要求6所述的对基板进行烤焙处理的装置，其中所述支撑平台开设有多个通孔，所述多个通孔用于收容所述多个支撑针。
  11. 根据权利要求10所述的对基板进行烤焙处理的装置，其中当所述多个支撑针伸出于所述支撑面时，所述基板由所述多个支撑针顶起；当所述多个支撑针收容于所述多个通孔时，所述基板被放置于所述支撑面上。
  12. 根据权利要求11所述的对基板烤焙的装置，其中当所述基板被顶起时，所述加热单元停止加热；当所述基板被放置于所述支撑面时，所述加热单元进行加热。
  13. 一种对基板进行烤焙处理的方法，其利用支撑平台、设置于所述支撑平台中多个支撑针、及加热单元；所述方法包括下列步骤：
    将所述多个支撑针伸出于所述支撑平台的支撑面；
    放置所述基板于所述多个支撑针上；
    将所述多个支撑针缩回于所述支撑平台中，使得所述基板被放置于所述支撑面上；
    将绝热层设置于对应所述支撑平台的底面；及
    采用所述加热单元对所述基板进行加热。
  14. 根据权利要求13所述的对基板进行烤焙处理的方法，其中所述加热步骤包括：
    将第一电热板设置于所述多个支撑针之上，且所述基板位于所述第一电热板与所述支撑针之间；及
    将第二电热板设置于所述支撑平台之下且面对所述支撑平台的所述底面。
  15. 根据权利要求14所述的对基板进行烤焙处理的方法，其中所述绝热层设置于所述第二电热板与所述支撑平台之间。
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