WO2014012335A1 - 高温固化炉 - Google Patents

高温固化炉 Download PDF

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Publication number
WO2014012335A1
WO2014012335A1 PCT/CN2012/086882 CN2012086882W WO2014012335A1 WO 2014012335 A1 WO2014012335 A1 WO 2014012335A1 CN 2012086882 W CN2012086882 W CN 2012086882W WO 2014012335 A1 WO2014012335 A1 WO 2014012335A1
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WIPO (PCT)
Prior art keywords
temperature
infrared
substrate
signal
heating
Prior art date
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Ceased
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PCT/CN2012/086882
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English (en)
French (fr)
Inventor
井杨坤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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Application filed by BOE Technology Group Co Ltd, Hefei BOE Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US14/119,318 priority Critical patent/US9423636B2/en
Publication of WO2014012335A1 publication Critical patent/WO2014012335A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B23/00—Heating arrangements
    • F26B23/04—Heating arrangements using electric heating
    • F26B23/06—Heating arrangements using electric heating resistance heating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B25/00—Details of general application not covered by group F26B21/00 or F26B23/00
    • F26B25/06—Chambers, containers, or receptacles
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories or equipment specially adapted for furnaces of these types
    • F27B5/18—Arrangement of controlling, monitoring, alarm or like devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0044—Furnaces, ovens, kilns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0066—Radiation pyrometry, e.g. infrared or optical thermometry for hot spots detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/047—Mobile mounting; Scanning arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/084—Adjustable or slidable
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K13/00—Thermometers specially adapted for specific purposes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D11/00—Arrangement of elements for electric heating in or on furnaces
    • F27D11/02—Ohmic resistance heating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F27D2019/0003—Monitoring the temperature or a characteristic of the charge and using it as a controlling value
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J2005/0077—Imaging

Definitions

  • Embodiments of the invention relate to a high temperature curing oven. Background technique
  • the high-temperature curing oven is a high-temperature curing device for curing the sealant between the substrates after the liquid crystal display device is placed on the box in the ODF (One Drop Filling) process.
  • Fig. 1 is a schematic view of a prior art high temperature curing oven having a heater and a thermocouple.
  • the high temperature curing oven includes a heating chamber 1, a heater 2 that heats the heating chamber 1, and a temperature monitoring system that monitors the curing temperature inside the heating chamber 1.
  • FIG. 2 is a schematic diagram of the principle of the temperature monitoring system of the high temperature curing furnace in the prior art.
  • the temperature monitoring system currently used in the high-temperature curing oven application includes a thermocouple 3, a signal processing module with an arithmetic logic controller (PLC, Programmable Logic Controller) as an arithmetic module, and an execution module; the thermocouple 3 is used to monitor the interior of the heating chamber 1
  • the curing temperature information, and the monitored curing temperature information signal is transmitted to the programmable logic controller, and the programmable logic controller performs the comparison calculation according to the curing temperature information monitored by the thermocouple 3 and the predetermined temperature information, when the thermocouple 3 monitors
  • the programmable logic controller When the curing temperature information is abnormal, the programmable logic controller generates an execution instruction, and transmits an execution instruction signal to the execution module, and the execution module adjusts the heater 2 according to the execution instruction operation, thereby realizing the internal curing temperature of the heating chamber 1. Control adjustment.
  • thermocouple 3 can only monitor the ambient temperature in the heating chamber 1 of the high-temperature curing oven, and cannot monitor the temperature of the substrate surface. Moreover, the thermocouple 3 has a certain delay for the perception of temperature change, and is cured at a high temperature. The monitoring accuracy of the solidification temperature of the substrate in the furnace heating chamber 1 is poor.
  • An object of the present invention is to provide a high temperature curing oven capable of improving the monitoring accuracy of a curing temperature of a substrate in a heating chamber.
  • an embodiment of the present invention provides a high temperature curing furnace including a heating chamber, a heater, and a temperature monitoring system for monitoring the internal curing temperature of the heating chamber;
  • the heater includes a plurality of individually controllable
  • the heating module, the temperature monitoring system includes:
  • thermocouple of ambient temperature information inside the heating chamber Detecting at least one thermocouple of ambient temperature information inside the heating chamber
  • thermocouple and the infrared monitoring device Signaling the thermocouple and the infrared monitoring device, and determining, according to the temperature information fed back by the thermocouple and the temperature signal fed back by the infrared monitoring device, that the substrate has an abnormal temperature of a curing temperature and/or an abnormal temperature at a low temperature Generating a signal processing module corresponding to the execution instruction;
  • each of the heating modules may correspond to a substrate placed in the heating chamber.
  • each of the heating modules may include at least one heating resistor wire, and each of the heating resistor wires may be individually controlled.
  • the infrared monitoring device may include:
  • At least one infrared camera tube located in the heating chamber for monitoring surface temperature information of each layer of the heating chamber
  • a driving device capable of driving the infrared camera tube to slide along the slide rail
  • an infrared signal receiving processor that is coupled to each of the infrared camera tubes to generate a temperature signal according to the substrate temperature information, wherein the infrared signal receiving processor is coupled to the signal processing module.
  • the infrared signal receiving processor may further generate an infrared imaging signal according to temperature information of the surface of the substrate monitored by the infrared camera tube;
  • the infrared monitoring device can also include a display signal coupled to the infrared signal receiving processor and imaged according to the infrared imaging signal generated by the infrared signal receiving processor.
  • the infrared camera tube may be one, and the infrared camera tube may be located along the slide rail. Reciprocating sliding between the highest layer substrate and the lowest layer substrate in the heating chamber.
  • the infrared camera tubes may be plural, and each of the infrared camera tubes corresponds to a substrate in the heating chamber, and the slide rails are corresponding to each of the infrared camera tubes.
  • the water is smooth, and each of the infrared camera tubes can slide back and forth along its slide.
  • the signal processing module can be a programmable logic controller.
  • the execution module may include a plurality of solid relays; controlling opening and closing of each solid relay according to an execution instruction of the programmable logic controller to correspond to a position of the heater corresponding to the substrate having an abnormal temperature The heating power of the heating module is adjusted.
  • FIG. 1 is a schematic view of a high temperature curing oven in the prior art
  • FIG. 2 is a schematic diagram showing the principle of a temperature monitoring system of a high temperature curing oven in the prior art
  • FIG. 3 is a schematic view showing the internal structure of a heating chamber of a high-temperature curing furnace according to an embodiment of the present invention
  • FIG. 4 is a schematic diagram showing the principle of a temperature monitoring system in a high-temperature curing furnace according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram showing the internal structure of a heating chamber of a high-temperature curing furnace according to an embodiment of the present invention
  • FIG. 4 is a schematic diagram showing the principle of a temperature monitoring system in a high-temperature curing furnace according to an embodiment of the present invention. .
  • the high temperature curing oven provided by the embodiment of the invention comprises a heating chamber 10 and heating the heating chamber 10
  • the heater 12 includes a plurality of individually controllable heating modules; wherein the temperature monitoring system comprises:
  • thermocouple 11 of the ambient temperature information inside the heating chamber 10
  • the signal is connected to the thermocouple 11 and the infrared monitoring device 19, and based on the temperature information fed back by the thermocouple 11 and the temperature signal fed back by the infrared monitoring device 19, it is determined that there is a substrate having a high temperature of the curing temperature and/or an abnormal temperature of the low temperature.
  • the signal processing module 15 of the instruction is connected to the thermocouple 11 and the infrared monitoring device 19, and based on the temperature information fed back by the thermocouple 11 and the temperature signal fed back by the infrared monitoring device 19, it is determined that there is a substrate having a high temperature of the curing temperature and/or an abnormal temperature of the low temperature.
  • the signal connection signal processing module 15 adjusts the execution module 16 of the heating power of the heating module corresponding to the substrate having the temperature abnormality in the heater 12 according to the execution instruction generated by the signal processing module 15.
  • the temperature monitoring system of the high temperature curing furnace monitors the curing temperature of the internal environment of the heating chamber 10 by using the thermocouple 11, and transmits the curing temperature information signal of the internal environment of the heating chamber 10 to the signal processing module 15; At the same time, the temperature of the surface of the substrate being solidified in the heating chamber 11 is monitored by the infrared monitoring device 19, and the temperature information generating temperature signal of the surface of the substrate is transmitted to the signal processing module 15; the signal processing module 15 is cured according to the feedback of the thermocouple 11. The temperature information and the temperature signal fed back by the infrared monitoring device 19 determine whether the curing temperature is abnormal.
  • the signal processing module 15 may generate a corresponding execution instruction according to the abnormal data, and transmit the execution instruction signal to the execution module 16, and execute the module 16.
  • the heating power of the heating module corresponding to the substrate having the temperature abnormality in the heater 12 is adjusted according to the execution command, thereby adjusting the output heat of the corresponding position of the heater 12, and finally the control of the curing temperature in the heating chamber 10 of the high-temperature curing furnace is realized.
  • thermocouple 11 monitors the high temperature curing temperature of the internal environment of the heating chamber 10.
  • the infrared monitoring device 19 has a high sensitivity. Sexuality can shorten the influence caused by the delay of the thermocouple 11.
  • the high-temperature curing furnace in this embodiment directly monitors the temperature change of the surface of the substrate in the heating chamber 10 of the high-temperature curing furnace by the infrared monitoring device 19 to perform temperature control, thereby greatly improving the temperature control precision.
  • the temperature monitoring system of the high temperature curing oven provided by the embodiment of the invention can monitor the curing temperature of the internal environment of the heating chamber 10, and can also face the substrate surface inside the heating chamber 10. The temperature is monitored to make the heating time control of the substrate of the high temperature curing furnace more reasonable, and the accuracy of monitoring the curing temperature of the heating chamber 10 is improved.
  • each heating module may correspond to a substrate placed in the heating chamber 10.
  • each of the heating modules may further include at least one heating resistor wire, and each of the heating resistor wires may be individually controlled.
  • the infrared monitoring device 19 in the temperature monitoring system of the high-temperature curing oven comprises: at least one infrared camera tube 13 located in the heating chamber 10 for monitoring the surface temperature information of each layer of the substrate in the heating chamber 10;
  • a driving device capable of driving the infrared camera tube 13 to slide along the slide rail
  • the infrared camera tube 13 is used to monitor the infrared light emitted from the surface of the substrate in the heating chamber 10 of the high-temperature curing oven, thereby realizing the monitoring of the surface temperature of the substrate; meanwhile, the infrared camera tube 13 can be driven along the sliding rail under the driving of the driving device.
  • the inside of the heating chamber 10 is slid to realize monitoring of each layer of the substrate heated and solidified in the heating chamber 10; further, the infrared camera tube 13 transmits the monitored infrared light information signal emitted from the surface of the substrate to the infrared signal receiving processor. 17.
  • the feedback signal is generated by the infrared signal receiving processor 17, and the feedback signal is transmitted to the signal processing module 15.
  • the infrared monitoring device 19 can monitor the temperature of each substrate surface in the heating chamber 10, and has high monitoring accuracy.
  • the infrared signal receiving processor 17 can also generate an infrared imaging signal according to the temperature information of the substrate surface monitored by the infrared camera tube 13; 19 may also include a display 18 that signals the infrared signal receiving processor 17 and images the infrared imaging signals generated by the infrared signal receiving processor 17.
  • the display 18 generates a thermal image based on the infrared imaging signal, the different colors above the thermal image representing different temperatures of the surface of the substrate being measured, and the synchronized image temperature by the infrared signal receiving processor 17 Degree curve and infrared imaging, the operator can find out the abnormal heating point through the temperature distribution of the thermal image, so that the curing condition of the substrate can be fully grasped, and the curing process can be accurately controlled to improve the yield of the product.
  • the infrared monitoring device 19 can also simplify the installation and debugging process of the high-temperature curing furnace.
  • the high-temperature curing furnace needs to fabricate thermocouple glass during the installation and debugging process, and adjust each layer in the heating chamber 10 of the high-temperature curing furnace, and needs The temperature curve is made for each layer of the substrate, which wastes a lot of man-hours; now, it can directly generate thermal images through the display 18 for debugging, which can save a lot of man-hours, greatly simplify the installation and debugging process of the high-temperature curing furnace, and can The temperature of the substrate is monitored in real time during production.
  • the temperature can be adjusted very simply, and there is no need to stop the production line.
  • the high-temperature curing furnace it is necessary to heat each of the heating chambers 10 as in the case of the high-temperature curing furnace.
  • the layer substrate is subjected to a temperature profile, which requires a large amount of time, and the temperature adjustment can be performed through the infrared camera tube 13 and the display 18 without stopping production.
  • the infrared camera tube 13 may be one and reciprocally slidable along the slide rail between the highest layer substrate and the lowest layer substrate in the heating chamber 10.
  • a plurality of infrared camera tubes 13 may be provided, and each of the infrared camera tubes 13 corresponds to a substrate in the heating chamber 10, and the slide rails are An infrared camera tube 13 - a corresponding horizontal slide 14 , and each of the infrared camera tubes 13 can slide back and forth along its horizontal slide 14 as shown in FIG.
  • the signal processing module 15 may be a programmable logic controller PLC.
  • the programmable logic controller PLC uses a type of programmable memory for its internal memory program, performing user-oriented instructions such as logic operations, sequence control, timing, counting, and arithmetic operations, and through digital or analog input/output. Control various types of machinery or production processes; programmable logic controller technology is mature and stable.
  • the execution module 16 may further include a plurality of solid state relays (SSRs); control opening and closing of the respective SSRs according to an execution instruction of the programmable logic controller to correspond to the substrate in the heater that is abnormal in temperature The heating power of the heating module at the location is adjusted.
  • SSR solid state relays
  • SSR is a new type of non-contact switching device consisting entirely of electronic components. It has high reliability, long life, low noise, fast switching speed, strong anti-interference ability, vibration resistance, impact resistance, moisture resistance, moisture resistance and corrosion resistance.
  • CMOS Complementary Metal Oxide Semiconductor
  • TTL Transistor-Transistor Logic
  • CMOS Complementary Metal Oxide Semiconductor
  • the temperature monitoring system of the high temperature curing furnace monitors the temperature information in the internal environment of the heating chamber by using a thermocouple, and transmits the monitored temperature information signal to the signal processing module; meanwhile, through the infrared monitoring device Temperature information of each surface of the substrate being solidified in the heating chamber is monitored, and temperature information generated by the surface of the substrate is transmitted to the signal processing module; the temperature processing information of the signal processing module according to the thermocouple and the temperature fed back by the infrared monitoring device
  • the signal determines whether there is a substrate having a curing temperature too high or too low, and if there is a substrate having a high temperature and/or a low temperature at the curing temperature, the signal processing module can generate a corresponding execution instruction according to the abnormal temperature data, and The execution instruction signal is transmitted to the execution module, and the execution module adjusts the heating power of the heating module corresponding to the substrate having the temperature abnormality in the heater according to the execution instruction, reduces the heating power at the excessive high point, or increases the heating
  • the infrared monitoring device monitors the temperature of the surface of the substrate which is being solidified in the heating chamber, and the thermocouple monitors the high temperature curing temperature of the internal environment of the heating chamber, in addition, the infrared monitoring device has high sensitivity and can shorten the cause. The effect of the delay of the thermocouple.
  • the temperature monitoring system provided by the embodiment of the present invention can monitor the curing temperature of the internal environment of the heating chamber, and can also monitor the temperature of the substrate surface inside the heating chamber, thereby improving the heating chamber.
  • the accuracy of monitoring the curing temperature of the substrate is only an exemplary embodiment of the present invention, and is not intended to limit the scope of the present invention.
  • the scope of the present invention is defined by the appended claims.

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Abstract

一种高温固化炉，包括加热腔（10）、加热器（12）以及温度监控系统；加热器（12）包括多个可单独控制的加热模块，温度监控系统包括：监测加热腔（10）内部环境温度信息的热电偶（11），监测加热腔（10）内每一层基板表面的温度信息并生成温度信号的红外监测装置（19），信号连接热电偶（11）和红外监测装置（19），根据热电偶（11）反馈的温度信息和红外监测装置（19）反馈的温度信号判断出存在温度异常的基板时，生成相应执行指令的信号处理模块（15）；信号连接信号处理模块（15），根据信号处理模块（15）生成的执行指令调节与存在温度异常的基板对应的加热模块加热功率的执行模块（16）。高温固化炉通过热电偶（11）以及红外监测装置（19）分别对加热腔（10）的环境温度以及基板表面温度进行监测，提高对固化温度监测的精度。

Description

高温固化炉 技术领域
本发明实施例涉及一种高温固化炉。 背景技术
高温固化炉是液晶滴注（ ODF, One Drop Filling )工艺中在液晶显示装 置对盒后对基板之间的封框胶进行固化的高温固化设备。
如图 1所示， 图 1为现有技术中的具有加热器以及热电偶的高温固化炉 的示意图。
该高温固化炉包括加热腔 1、 对加热腔 1进行加热的加热器 2以及对加 热腔 1内部的固化温度进行监控的温度监控系统。
现有技术中， 高温固化炉釆用的温度监控系统的原理图如图 2所示， 图 2为现有技术中高温固化炉的温度监控系统的原理示意图。
目前使用的高温固化炉应用的温度监控系统包括热电偶 3、 以可编程逻 辑控制器（PLC, Programmable Logic Controller )为运算模块的信号处理模 块以及执行模块； 热电偶 3用于监测加热腔 1内部的固化温度信息， 并将监 测到的固化温度信息信号传输给可编程逻辑控制器， 可编程逻辑控制器根据 热电偶 3监测的固化温度信息以及预定温度信息进行对比计算， 当热电偶 3 监测的固化温度信息出现异常时， 可编程逻辑控制器生成执行指令， 并将执 行指令信号传输给执行模块， 执行模块根据执行指令动作， 对加热器 2进行 调整， 从而实现对加热腔 1内部固化温度的控制调节。
但是， 热电偶 3只能对高温固化炉加热腔 1内的环境温度进行监测， 无 法对基板表面的温度进行监测， 而且， 热电偶 3对于温度变化的感知具有一 定的延时性， 对高温固化炉加热腔 1内基板的固化温度的监控精度较差。
因此， 如何提供一种高温固化炉， 以提高其对加热腔内基板的固化温度 的监控精度， 是本领域技术人员需要解决的技术问题。 发明内容 本发明的目的是提供一种高温固化炉， 其能够提高加热腔内基板的固化 温度的监控精度。
为达到上述目的， 本发明实施例提供了一种高温固化炉， 包括加热腔、 加热器、 以及对所述加热腔内部固化温度进行监控的温度监控系统； 所述加 热器包括多个可单独控制的加热模块， 所述温度监控系统包括：
监测所述加热腔内部环境温度信息的至少一个热电偶；
监测所述加热腔内每一层基板表面的温度信息、 根据所述基板表面的温 度信息可生成温度信号的红外监测装置；
信号连接所述热电偶和所述红外监测装置， 根据所述热电偶反馈的温度 信息和所述红外监测装置反馈的温度信号判断出存在固化温度过高点和 /或 过低点温度异常的基板时， 生成相应执行指令的信号处理模块；
信号连接所述信号处理模块， 并根据所述信号处理模块生成的执行指令 调节所述加热器中与存在温度异常的所述基板对应的所述加热模块加热功率 的执行模块。
例如， 每一个所述加热模块可以与所述加热腔内放置的基板——对应。 例如， 每一个所述加热模块可以包括至少一个加热电阻丝， 且每一个加 热电阻丝可单独控制。
例如， 所述红外监测装置可以包括：
位于所述加热腔内、 监测所述加热腔内的各层基板表面温度信息的至少 一个红外摄像管；
设置于所述加热腔侧壁的滑轨；
可驱动所述红外摄像管沿所述滑轨滑动的驱动装置； 和
与每一个所述红外摄像管信号连接， 根据基板温度信息可生成温度信号 的红外信号接收处理器， 所述红外信号接收处理器与所述信号处理模块信号 连接。
例如， 所述红外信号接收处理器还可以根据所述红外摄像管监测的基板 表面的温度信息生成红外成像信号；
所述红外监测装置还可以包括信号连接所述红外信号接收处理器、 并根 据所述红外信号接收处理器生成的红外成像信号成像的显示器。
例如， 所述红外摄像管可以为一个， 所述红外摄像管沿所述滑轨可在所 述加热腔内的最高层基板与最低层基板之间往复滑动。
例如， 所述红外摄像管可以为多个， 且每一个所述红外摄像管与所述加 热腔内的一层基板相对应， 所述滑轨为与每一个所述红外摄像管——对应的 水平滑道， 且每一个所述红外摄像管均可沿其滑道往复滑动。
例如， 所述信号处理模块可以为可编程逻辑控制器。
例如， 所述执行模块可以包括多个固体继电器； 根据所述可编程逻辑控 制器的执行指令控制各个固体继电器的开合， 以对所述加热器中与所述存在 温度异常的基板对应位置处的所述加热模块的加热功率进行调节。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例的附图作 简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图 1为现有技术中高温固化炉的示意图；
图 2为现有技术中高温固化炉的温度监测系统的原理示意图；
图 3为本发明实施例提供的高温固化炉的加热腔的内部结构示意图； 图 4为本发明实施例提供的高温固化炉中温度监控系统的原理示意图； 图 5为本发明实施例提供的高温固化炉中红外摄像管的一种布置结构的 示意图。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。
参考图 3和图 4, 其中， 图 3为本发明实施例提供的高温固化炉的加热 腔的内部结构的示意图； 图 4为本发明实施例提供的高温固化炉中的温度监 控系统的原理示意图。
本发明实施例提供的高温固化炉包括加热腔 10、 对加热腔 10进行加热 的加热器 12、 以及对加热腔 10内部固化温度进行监控的温度监控系统； 加 热器 12包括多个可单独控制的加热模块； 其中， 温度监控系统包括：
监测加热腔 10内部环境温度信息的至少一个热电偶 11 ;
监测加热腔 10内每一层基板表面的温度信息、根据基板表面的温度信息 可生成温度信号的红外监测装置 19;
信号连接热电偶 11和红外监测装置 19、根据热电偶 11反馈的温度信息 和红外监测装置 19反馈的温度信号判断出存在固化温度过高点和 /或过低点 温度异常的基板时， 生成执行指令的信号处理模块 15;
信号连接信号处理模块 15、 并根据信号处理模块 15生成的执行指令调 节加热器 12 中与存在温度异常的所述基板对应的所述加热模块加热功率的 执行模块 16。
本发明实施例提供的高温固化炉的温度监控系统通过釆用热电偶 11 对 加热腔 10内部环境的固化温度进行监测， 并将加热腔 10内部环境的固化温 度信息信号传输给信号处理模块 15; 同时， 通过红外监测装置 19对加热腔 11内正在固化的基板表面的温度进行监测，并将基板表面的温度信息生成温 度信号传输给信号处理模块 15;信号处理模块 15根据热电偶 11反馈的固化 温度信息以及红外监测装置 19反馈的温度信号判断固化温度是否异常，若固 化温度异常，信号处理模块 15可根据异常数据生成相应的执行指令，并将执 行指令信号传输给执行模块 16,执行模块 16根据执行指令调整加热器 12中 与存在温度异常的基板对应的加热模块的加热功率，进而调节加热器 12相应 位置的输出热量， 最终实现对高温固化炉的加热腔 10内固化温度的控制。
由于红外监测装置 19监测的是加热腔 10内正在高温固化的基板的表面 的温度， 而热电偶 11监测的是加热腔 10内部环境的高温固化温度， 此外， 红外监测装置 19具有艮高的灵敏性， 能够缩短因热电偶 11的延时性造成的 影响。
该实施例中的高温固化炉通过红外监测装置 19 直接实时地监测高温固 化炉的加热腔 10内基板表面的温度变化来进行温度控制，使其温度控制精度 大大提高。
所以， 本发明实施例提供的高温固化炉的温度监控系统既能够对加热腔 10内部环境的固化温度进行监测， 同时还可以对加热腔 10内部的基板表面 的温度进行监测， 从而使高温固化炉对基板的加热时间控制的更为合理， 提 高了对加热腔 10的固化温度监控的精确性。
当然， 为了进一步增加对加热腔 10内部温度控制的精确性， 例如，每一 个加热模块可以与加热腔 10内放置的基板——对应。
此外， 每一个加热模块还可以包括至少一个加热电阻丝， 且每一个加热 电阻丝可单独控制。
上述实施例中， 高温固化炉的温度监控系统中的红外监测装置 19包括： 位于加热腔 10内、 监测加热腔 10内的各层基板表面温度信息的至少一 个红外摄像管 13;
设置于加热腔 10内的滑轨；
可驱动红外摄像管 13沿滑轨滑动的驱动装置；
与每一个红外摄像管 13信号连接,根据基板温度信息可生成温度信号的 红外信号接收处理器 17,红外信号接收处理器 17与信号处理模块 15信号连 接。 理， 利用红外摄像管 13对高温固化炉的加热腔 10内基板表面发出的红外光 进行监测，从而实现对基板表面温度的监测； 同时红外摄像管 13在驱动装置 的驱动下可以沿滑轨在加热腔 10内进行滑动， 从而实现对加热腔 10内进行 加热固化的每一层基板进行监测； 而且，红外摄像管 13将监测到的基板表面 发出的红外光信息信号传输给红外信号接收处理器 17 ,通过红外信号接收处 理器 17生成反馈信号， 并将反馈信号传输给信号处理模块 15。
因此， 上述红外监测装置 19能够实现对加热腔 10内的每一层基板表面 的温度进行监测， 具有较高的监测精确性。
此外，在上述实施例中， 为了提高红外摄像管 13监测效果的直观性， 红 外信号接收处理器 17还可以根据红外摄像管 13监测的基板表面的温度信息 生成红外成像信号； 而且，红外监测装置 19还可以包括信号连接红外信号接 收处理器 17、 并根据红外信号接收处理器 17生成的红外成像信号成像的显 示器 18。
显示器 18根据红外成像信号生成热图像，热图像上面的不同颜色代表被 测基板表面的不同温度，并且通过红外信号接收处理器 17进行同步的画面温 度曲线和红外成像， 操作人员可以通过热图像的温度分布找出异常发热点， 从而能够对基板的固化情况实现全面的掌握， 进而精确控制固化的过程， 提 高产品的良率。
并且，上述红外监测装置 19还可以简化高温固化炉的装机调试过程， 目 前高温固化炉在装机调试过程中需要制作热电偶玻璃， 对高温固化炉加热腔 10内的每一层进行调整， 并且需要对每一层基板分别做温度曲线， 浪费了大 量的工时； 而现在可以直接通过显示器 18生成热图像进行调试，可省去大量 的工时， 大大简化了高温固化炉的装机调试过程， 并且可以在生产中进行对 基板的温度进行实时的监控。
而且， 在每次设备保养时， 也可以很简单的进行温度的调整， 不需要停 产线， 目前对高温固化炉进行保养时， 需要像高温固化炉装机时那样， 对加 热腔 10内的每一层基板做温度曲线，需要大量的时间，现在不需要停产就可 以通过红外摄像管 13以及显示器 18进行温度的调整。
上述实施例中， 红外摄像管 13可以为一个， 且可沿滑轨在加热腔 10内 的最高层基板与最低层基板之间往复滑动。
当然， 为了能够及时地对每一层基板的温度进行监控， 还可以提供多个 红外摄像管 13 , 且每一个红外摄像管 13与加热腔 10内的一层基板相对应， 滑轨为与每一个红外摄像管 13—一对应的水平滑道 14, 且每一个红外摄像 管 13均可沿其水平滑道 14往复滑动， 如图 5所示。
在上述实施例中， 信号处理模块 15可以为可编程逻辑控制器 PLC。 可 编程逻辑控制器 PLC釆用一类可编程的存储器， 用于其内部存储程序，执行 逻辑运算、 顺序控制、 定时、 计数与算术操作等面向用户的指令， 并通过数 字或模拟式输入 /输出控制各种类型的机械或生产过程；可编程逻辑控制器技 术成熟， 工作稳定。
此外，执行模块 16还可以包括多个固体继电器（ SSR, Solid State Relay ); 根据可编程逻辑控制器的执行指令控制各个 SSR的开合，以对加热器中与所 述存在温度异常的基板对应位置处的所述加热模块的加热功率进行调节。 SSR是一种全部由电子元器件组成的新型无触点开关器件， 具有高可靠性、 长寿命、 低噪音、 开关速度快、 抗干扰能力强、 耐振动、 耐冲击、 防湿、 防 潮、 防腐蚀、 能与逻辑门电路（TTL, Transistor-Transistor Logic ) 、 互补金 属 匕物半导体（CMOS, Complementary Metal Oxide Semiconductor )等還 辑电路兼容的优点， 且其在导通及截止时不会产生电火花现象。
本发明实施例提供的高温固化炉的温度监控系统通过釆用热电偶对加热 腔内部环境中的温度信息进行监测， 并将监测的温度信息信号传输给信号处 理模块； 同时， 通过红外监测装置对加热腔内正在固化的每一层基板表面的 温度信息进行监测， 并将基板表面的温度信息生成温度信号传输给信号处理 模块； 信号处理模块根据热电偶反馈的温度信息以及红外监测装置反馈的温 度信号判断是否存在固化温度过高点或者过低点的基板， 若存在固化温度存 在过高点和 /或过低点的基板时，信号处理模块可根据异常温度的数据生成相 应的执行指令， 并将执行指令信号传输给执行模块， 执行模块根据执行指令 调整加热器中与存在温度异常的基板对应的加热模块的加热功率， 降低过高 点处的加热功率， 或者增大过低点处的加热功率， 从而实现对加热器输出温 度的调整， 最终提高基板固化温度的均一性。
由于红外监测装置监测的是加热腔内正在高温固化的基板的表面的温 度， 而热电偶监测的是加热腔内部环境的高温固化温度， 此外， 红外监测装 置具有很高的灵敏性， 能够缩短因热电偶的延时性造成的影响。
所以， 本发明实施例提供的高温固化炉包括的温度监控系统既能够对加 热腔内部环境的固化温度进行监测， 同时还可以对加热腔内部的基板表面的 温度进行监测， 提高了对加热腔内基板的固化温度的监控精确性。 以上所述 仅是本发明的示范性实施方式， 而非用于限制本发明的保护范围， 本发明的 保护范围由所附的权利要求确定。

Claims

权利要求书
1、 一种高温固化炉， 包括加热腔、加热器、 和对所述加热腔内部固化温 度进行监控的温度监控系统， 其中， 所述加热器包括多个可单独控制的加热 模块， 所述温度监控系统包括：
至少一个热电偶， 用于监测所述加热腔内部环境温度信息；
红外监测装置， 用于监测所述加热腔内每一层基板表面的温度信息、 根 据所述基板表面的温度信息可生成温度信号；
信号处理模块， 信号连接所述热电偶和所述红外监测装置， 并根据所述 热电偶反馈的温度信息和所述红外监测装置反馈的温度信号判断出存在固化 温度过高点和 /或过低点的温度异常的基板时， 生成相应的执行指令； 和 执行模块， 信号连接所述信号处理模块， 并根据所述信号处理模块生成 的执行指令调节所述加热器中与存在温度异常的所述基板对应的所述加热模 块力 P热功率。
2、根据权利要求 1所述的高温固化炉， 其中，每一个所述加热模块与所 述加热腔内放置的基板——对应。
3、根据权利要求 1或 2所述的高温固化炉， 其中，每一个所述加热模块 包括至少一个加热电阻丝， 且每一个加热电阻丝可单独控制。
4、 根据权利要求 1-3中任一项所述的高温固化炉， 其中， 所述红外监测 装置包括：
位于所述加热腔内、 监测所述加热腔内的各层基板表面温度信息的至少 一个红外摄像管；
设置于所述加热腔侧壁的滑轨；
可驱动所述红外摄像管沿所述滑轨滑动的驱动装置； 和
与每一个所述红外摄像管信号连接， 根据基板温度信息可生成温度信号 的红外信号接收处理器， 所述红外信号接收处理器与所述信号处理模块信号 连接。
5、根据权利要求 4所述的高温固化炉， 其中， 所述红外信号接收处理器 还可以根据所述红外摄像管监测的基板表面的温度信息生成红外成像信号； 所述红外监测装置还包括信号连接所述红外信号接收处理器、 并根据所 述红外信号接收处理器生成的红外成像信号成像的显示器。
6、根据权利要求 4或 5所述的高温固化炉， 其中， 所述红外摄像管为一 个， 所述红外摄像管沿所述滑轨可在所述加热腔内的最高层基板与最低层基 板之间往复滑动。
7、根据权利要求 4或 5所述的高温固化炉， 其中， 所述红外摄像管为多 个， 且每一个所述红外摄像管与所述加热腔内的一层基板相对应， 所述滑轨 为与每一个所述红外摄像管一一对应的水平滑道， 且每一个所述红外摄像管 均可沿其滑道往复滑动。
8、 根据权利要求 1-7任一项所述的高温固化炉， 其中， 所述信号处理模 块为可编程逻辑控制器。
9、 根据权利要求 1-8任一项所述的高温固化炉， 其中， 所述执行模块包 括多个固体继电器； 根据所述可编程逻辑控制器的执行指令控制各个固体继 电器的开合， 以对所述加热器中与所述存在温度异常的基板对应位置处的所 述加热模块的加热功率进行调节。
PCT/CN2012/086882 2012-07-16 2012-12-18 高温固化炉 Ceased WO2014012335A1 (zh)

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