WO2014010696A1 - 複合基板、圧電デバイス及び複合基板の製法 - Google Patents
複合基板、圧電デバイス及び複合基板の製法 Download PDFInfo
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- WO2014010696A1 WO2014010696A1 PCT/JP2013/069031 JP2013069031W WO2014010696A1 WO 2014010696 A1 WO2014010696 A1 WO 2014010696A1 JP 2013069031 W JP2013069031 W JP 2013069031W WO 2014010696 A1 WO2014010696 A1 WO 2014010696A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 147
- 239000002131 composite material Substances 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000919 ceramic Substances 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 3
- 239000010980 sapphire Substances 0.000 claims abstract description 3
- 238000005498 polishing Methods 0.000 claims description 15
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 51
- 239000012790 adhesive layer Substances 0.000 abstract description 8
- -1 copper Chemical compound 0.000 abstract description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000002585 base Substances 0.000 description 20
- 239000005388 borosilicate glass Substances 0.000 description 10
- 238000010897 surface acoustic wave method Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- RIUWBIIVUYSTCN-UHFFFAOYSA-N trilithium borate Chemical compound [Li+].[Li+].[Li+].[O-]B([O-])[O-] RIUWBIIVUYSTCN-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
Definitions
- the present invention relates to a composite substrate, a piezoelectric device, and a method for manufacturing the composite substrate.
- Patent Document 1 describes a surface acoustic wave element in which comb-like excitation electrodes (IDT electrodes) are formed on a piezoelectric substrate.
- IDT electrodes comb-like excitation electrodes
- the piezoelectric device is also used as an electronic component used in a mobile phone, and further miniaturization is demanded.
- a SAW filter which is a kind of surface acoustic wave device, has an element size determined by an operating frequency, so it is difficult to reduce the mounting area. Therefore, a reduction in height is required for downsizing (volume reduction), and in the future, it is required to reduce the thickness of the element to 100 ⁇ m or less.
- single crystal materials having anisotropy such as LiTaO 3 and LiNbO 3 tend to generate cracks and are difficult to handle. From the above, it is required to make piezoelectric substrates such as LiTaO 3 and LiNbO 3 thin and difficult to break.
- the present invention has been made to solve such problems, and has as its main object to provide a composite substrate that is thin and capable of suppressing the occurrence of cracks.
- the composite substrate of the present invention is A piezoelectric substrate; A support layer that is bonded to the piezoelectric substrate and is made of a material having no crystal anisotropy in the bonding plane and has a thickness equal to or less than that of the piezoelectric substrate.
- the piezoelectric device of the present invention is The composite substrate of the present invention described above; An electrode formed on the piezoelectric substrate; It is equipped with.
- the method for producing the composite substrate of the present invention comprises: (1) forming a support layer made of a material having no crystal anisotropy in a bonding surface with the piezoelectric body on the piezoelectric substrate; (2) polishing the surface of the piezoelectric substrate; Including The support layer is formed in the step (1) so that the thickness is equal to or less than the thickness of the piezoelectric substrate after the polishing in the step (2), or before or after the step (2) or the step (2). Polishing the surface of the support layer to be equal to or less than the thickness of the piezoelectric substrate after the polishing in the step (2), Is.
- the support layer made of a material having no anisotropy in the bonding surface is, for example, lithium tantalate (also expressed as LiTaO 3 or LT), lithium niobate (also expressed as LiNbO 3 or LN), or the like. It is hard to break compared with the piezoelectric body. Therefore, the piezoelectric substrate can be reinforced with the support layer. Thereby, the composite substrate can be thinned, and the occurrence of cracks in the piezoelectric substrate can be suppressed as compared with the case where the piezoelectric substrate does not have a support layer.
- the composite substrate of the present invention can be thinned without causing cracks to such a thickness that would cause cracks when the piezoelectric substrate does not have a support layer. Since the composite substrate of the present invention is thin and difficult to break as described above, the piezoelectric device can be made to have a lower height than the conventional one. According to the method for manufacturing a composite substrate of the present invention, the above-described composite substrate can be manufactured relatively easily.
- FIG. 2 is an explanatory diagram illustrating an example of a composite substrate 10.
- FIG. FIG. 2 is a cross-sectional view taken along the line AA in FIG. It is explanatory drawing which shows an example of the cross section of the composite substrate 110 obtained by joining the piezoelectric substrate 12 and the support layer 14 by direct joining. It is explanatory drawing which shows a mode when the composite substrate 10 is made into the aggregate
- 6 is a graph showing the relationship between the base thickness ratio Tr and the maximum displacement when the base thickness ratio Tr is changed in Example 1.
- the composite substrate of the present invention includes a piezoelectric substrate and a support layer that is bonded to the piezoelectric substrate and is made of a material having no crystal anisotropy in the bonding surface and has a thickness equal to or less than that of the piezoelectric substrate.
- the base thickness ratio Tr is preferably set to 0.4 or less, and is set to 0.3 or less. Is more preferable.
- the base thickness ratio Tr is preferably 0.1 or more and 0.4 or less, and more preferably 0.1 or more and 0.3 or less.
- the thickness t1 of the piezoelectric substrate is not particularly limited, but is, for example, 100 ⁇ m or less, and may be 50 to 70 ⁇ m.
- the thickness t2 of the support layer is not particularly limited, but is, for example, 50 ⁇ m or less, and may be 10 to 20 ⁇ m.
- the size of the piezoelectric substrate is not particularly limited. For example, the diameter is 50 to 150 mm.
- the size of the support layer is not particularly limited, but for example, the diameter is 50 to 150 mm.
- the total thickness of the composite substrate of the present invention may be 180 ⁇ m or less, or 100 ⁇ m or less. The thinner the overall thickness of the composite substrate, the lower the height of a device using the composite substrate.
- the total thickness of the piezoelectric substrate, the support layer, and the adhesive layer is the total thickness of the composite substrate. Further, in the composite substrate in which the piezoelectric substrate and the support layer are joined by direct joining, the total thickness of the piezoelectric substrate and the support layer is the total thickness of the composite substrate.
- lithium tantalate also expressed as LiTaO 3 , LT
- lithium niobate also expressed as LiNbO 3 , LN
- LN-LT solid solution single crystal lithium borate, Langa Site, crystal, etc.
- LT and LN are suitable as surface acoustic wave devices for high frequencies and wideband frequencies because surface acoustic waves have a high propagation speed and a large electromechanical coupling coefficient.
- examples of the support layer include glass such as borosilicate glass and quartz glass, Si, SiO 2 , sapphire, and ceramics.
- examples of the ceramic include aluminum nitride, alumina, ZnO, and SiC. If the material of the support layer has a thermal expansion coefficient close to that of the piezoelectric substrate, warpage during heating of the composite substrate can be suppressed.
- the composite substrate of the present invention may be a substantially disk-shaped wafer or may have an orientation flat (OF). Further, the composite substrate of the present invention may be cut out from the wafer.
- OF orientation flat
- the method for producing a composite substrate of the present invention includes (1) a step of forming a support layer made of a material having no crystal anisotropy in a bonding surface with the piezoelectric body on the piezoelectric substrate, and (2) the surface of the piezoelectric substrate.
- the support layer is formed so that the thickness in the step (1) is equal to or less than the thickness of the piezoelectric substrate after the polishing in the step (2), or the step (2) or Before and after the step (2), the surface of the support layer is polished to a thickness equal to or less than the thickness of the piezoelectric substrate after the polishing in the step (2).
- the support layer is formed in the step (1) so that the thickness is less than the thickness of the piezoelectric substrate after the polishing in the step (2), or before and after the step (2) or the step (2). It is preferable to polish the surface of the support layer to be less than the thickness of the piezoelectric substrate after the polishing in the step (2).
- the support layer may be formed on the piezoelectric substrate by indirectly bonding the piezoelectric substrate and the support layer via an adhesive layer, or by so-called direct bonding.
- a support layer may be formed on the piezoelectric substrate by bonding.
- the direct bonding technique for example, a technique such as surface activated bonding that realizes bonding at room temperature by activating the surfaces by plasma treatment can be used.
- the steps (2) After forming the support layer on the piezoelectric substrate, in the step (2), the surfaces of the piezoelectric substrate and the support layer are polished so that the thickness of the support layer is equal to or less than (preferably less than) the thickness of the polished piezoelectric substrate.
- the composite substrate of the present invention can be obtained.
- polishing of the support layer may be omitted.
- FIG. 1 is an explanatory diagram showing an example of a composite substrate 10 obtained by bonding a piezoelectric substrate 12 and a support layer 14 via an adhesive layer 16.
- the composite substrate 10 of FIG. 1 is a substantially disk-shaped wafer and has an orientation flat (OF).
- FIG. 2 is a cross-sectional view taken along the line AA in FIG.
- FIG. 3 is an explanatory view showing an example of a cross section of the composite substrate 110 obtained by bonding the piezoelectric substrate 12 and the support layer 14 by direct bonding.
- the piezoelectric device according to the present invention includes the composite substrate according to any one of the above-described aspects and an electrode formed on the piezoelectric substrate.
- the electrode may be capable of exciting a piezoelectric substrate.
- the piezoelectric device include a sensor such as a gyro sensor or an acceleration sensor, a piezoelectric actuator applied to a droplet discharge device, a surface acoustic wave device such as a crystal resonator, a resonator, a filter, and a convolver.
- a sensor such as a gyro sensor or an acceleration sensor
- a piezoelectric actuator applied to a droplet discharge device a surface acoustic wave device such as a crystal resonator, a resonator, a filter, and a convolver.
- an electrode is formed on the composite substrate of the present invention using a general photolithography technique to form an assembly of a large number of piezoelectric devices, and then each piezoelectric device is cut out by dicing. Can be obtained.
- the 1-port SAW resonator 30 has a pair of IDT (Interdigital / Transducer) electrodes (also referred to as comb electrodes or interdigital electrodes) 32 and 34 and a reflective electrode 36 formed on the surface of the piezoelectric substrate 12 by photolithography. It is.
- IDT Interdigital / Transducer
- Example 1 the composite substrate 10 shown in FIGS. 1 and 2 was produced as follows. First, in step (1) of the manufacturing method described above, a LiTaO 3 substrate (piezoelectric substrate 12) having a diameter of 4 inches and a thickness of 230 ⁇ m and a borosilicate glass substrate (support layer 14) having the same diameter and the same thickness are combined with an ultraviolet curable resin. Pasted through. As the borosilicate glass substrate, Corning Eagle XG (non-alkali glass) was used. After curing the resin with ultraviolet rays to form the adhesive layer 16, in step (2), the LiTaO 3 side was ground with a grinder to a thickness of about 100 ⁇ m.
- the surface was subjected to CMP to give a mirror surface having a thickness of 80 ⁇ m.
- the borosilicate glass surface was ground and polished in the same manner, and finally the thickness of the borosilicate glass surface was reduced to 10 ⁇ m to obtain the ultrathin wafer (composite substrate 10) of Example 1.
- the material of the support layer 14 to ceramics made of ZnO, Si, Hi-Seram (registered trademark of Nippon Zushi Co., Ltd., ceramics made of alumina), and ceramics made of SiC, a composite substrate was similarly prepared, and Examples 2 to 5 were respectively performed. Obtained.
- the adhesive layer 16 has a thickness of 0.3 ⁇ m.
- a SAW filter element having an IDT electrode was produced by applying a normal electrode production process. Specifically, an IDT electrode is formed on the surface of the LiTaO 3 substrate of the composite substrate by a general photolithography technique (resist is applied, patterned, and an electrode pattern is formed by an etching process), and one is formed by dicing. One element was cut out to produce a plurality of piezoelectric devices.
- any heating after the resist coating (0.99 ° C.) during wafer (composite substrate) was 3 ⁇ 10 mm deformation in a convex shape in the top LiTaO 3 side (The amount of warping of this deformation is called the maximum displacement), but the element could be formed without breakage.
- the base thickness ratio Tr is preferably 0.1 or more, and the thickness of the support layer is preferably 10 ⁇ m or more.
- the wafer (composite substrate) shape was greatly warped and damaged during resist pre-baking (heating to 150 ° C.).
- FIG. 5 is a graph showing the relationship between the base thickness ratio Tr and the maximum displacement when the base thickness ratio Tr is changed in the first embodiment.
- FIG. 5 indicates that the maximum displacement increases as the base thickness ratio Tr increases.
- the thickness of the support layer is not too thin or too thick.
- the base thickness ratio Tr shown in FIG. 5 is in the range of 0.5 (50%) or less, the composite substrate is not damaged, and when the base thickness ratio Tr is 0.6, the composite substrate is damaged.
- the base thickness ratio Tr is preferably 0.5 or less.
- the thickness of the support layer is preferably not more than the piezoelectric substrate.
- the base thickness ratio Tr is preferably set to less than 0.5, and the base thickness ratio Tr is more preferably set to a value of 0.3 or less.
- the base thickness ratio Tr is optimally between 0.1 and 0.3 (10% or more and 30% or less).
- the present invention can be applied to piezoelectric devices such as sensors such as gyro sensors and acceleration sensors, piezoelectric actuators applied to droplet discharge devices, surface acoustic wave devices such as resonators, filters, and convolvers, and crystal resonators. is there.
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Abstract
Description
圧電基板と、
前記圧電基板に接合され、接合面内で結晶異方性がない材料からなり、厚みが圧電基板以下である支持層と、を備えたものである。
上述した本発明の複合基板と、
前記圧電基板上に形成された電極と、
を備えたものである。
(1)圧電基板に、該圧電体との接合面内で結晶異方性がない材料からなる支持層を形成する工程と、
(2)前記圧電基板の表面を研磨する工程と、
を含み、
前記支持層は、前記工程(1)において厚みが前記工程(2)の研磨後の圧電基板の厚み以下となるように形成するか、前記工程(2)又は前記工程(2)の前後において該支持層の表面を研磨して前記工程(2)の研磨後の圧電基板の厚み以下とする、
ものである。
実施例1として、図1,2に示した複合基板10を以下のように作製した。まず、上述した製法の工程(1)において、直径4インチ、厚み230μmのLiTaO3基板(圧電基板12)と、同じ直径及び同じ厚みのホウ珪酸ガラス基板(支持層14)と、を紫外線硬化樹脂を介して貼りあわせた。なお、ホウ珪酸ガラス基板は、コーニング社製のイーグルXG(無アルカリガラス)を用いた。紫外線で樹脂を硬化させて接着層16とした後、工程(2)において、LiTaO3側をグラインダーで厚み100μm程度まで研削した。更に表面をCMP研磨して厚み80μmの鏡面とした。次いで、ホウ珪酸ガラス面を同様に研削、研磨し最終的にホウ珪酸ガラス面の厚みを10μmまで薄くして、実施例1の超薄ウエハー(複合基板10)を得た。支持層14の材料をZnOからなるセラミックス、Si、ハイセラム(日本碍子株式会社の登録商標,アルミナからなるセラミックス)、SiCからなるセラミックスと変えて同様に複合基板を作製しそれぞれ実施例2~5を得た。なお、接着層16の厚みは0.3μmとした。
実施例1~5の複合基板について、通常の電極作成プロセスを適用して、IDT電極を有するSAWフィルター素子を作製した。具体的には、複合基板のうちLiTaO3基板の表面に一般的なフォトリソグラフィ技術(レジストを塗布、パターンニングし、エッチング工程により電極パターンを形成する)によりIDT電極を形成し、ダイシングにより1つ1つの素子を切り出して、複数の圧電デバイスを作製した。実施例1~4の複合基板は、圧電デバイスの製造工程において、いずれもレジスト塗布後の加熱(150℃)時にウェハー(複合基板)がLiTaO3側を上にして凸状に3~10mm変形した(この変形の反り量を、最大変位と称する)が、破損すること無く素子を形成することができた。
次に実施例1と同じ構造の複合基板を作製した。すなわち、圧電基板12の厚みが80μmでホウ珪酸ガラス(支持層14)の厚みが10μmの複合基板(ベース厚み比Tr=0.11)を作製した。次に、より薄くする目的でホウ珪酸ガラス表面をさらに5μm程度研磨をしたところ、圧電基板の端部から剥離が生じ、研磨中にホウ珪酸ガラス基板が粉砕され、研磨面が傷だらけとなった。これはガラスを薄くしすぎたせいで研磨負荷に耐えられるだけの機械的強度を損なったことが原因である。このことから、ベース厚み比Trは0.1以上とすることが好ましく、支持層の厚みを10μm以上とすることが好ましいことがわかった。今度は逆にホウ珪酸ガラス(支持層14)の厚みを厚くする目的で、LiTaO3の厚みを40μm、ガラスの厚みを60μmとした(ベース厚み比Tr=0.6とした)点以外は実施例1と同様にして複合基板を作成した。実施例1と同様にSAWフィルターの電極作製プロセスを適用したところ、レジストのプリベーク(150℃に加熱)中にウェハー(複合基板)形状が凸状に大きく反り破損した。
LiTaO3基板(圧電基板12)の厚みt1を100μmで一定としつつ、ホウ珪酸ガラス基板(支持層14)の厚みt2を種々変更してベース厚み比Trを変更した点以外は実施例1と同様の製法で、複合基板を複数作製した。そして、この複数の複合基板について、同様にレジストのプリベーク(150℃に加熱)後の反り量(最大変位)を測定した。図5は、このように実施例1でベース厚み比Trを変えた場合のベース厚み比Trと最大変位との関係を示すグラフである。図5から、ベース厚み比Trが大きくなると、最大変位が大きくなることがわかった。
Claims (9)
- 圧電基板と、
前記圧電基板に接合され、接合面内で結晶異方性がない材料からなり、厚みが圧電基板以下である支持層と、を備えた複合基板。 - 前記圧電基板の厚みをt1,前記支持層の厚みをt2としたときのベース厚み比Tr=t2/(t1+t2)が0.4以下である、
請求項1に記載の複合基板。 - 全体の厚みが180μm以下である、
請求項1又は2に記載の複合基板。 - 全体の厚みが100μm以下である、
請求項1~3のいずれか1項に記載の複合基板。 - 前記支持層はガラス、Si、SiO2、サファイア、セラミックスのいずれかからなる、
請求項1~4のいずれか1項に記載の複合基板。 - 前記支持層は窒化アルミニウム,アルミナ,ZnO,SiCのいずれかで形成されたセラミックスからなる、
請求項1~5のいずれか1項に記載の複合基板。 - 前記圧電基板はLiTaO3、LiNbO3、水晶のいずれかからなる、
請求項1~6のいずれか1項に記載の複合基板。 - 請求項1~7のいずれか1項に記載の複合基板と、
前記圧電基板上に形成された電極と、
を備えた圧電デバイス。 - (1)圧電基板に、該圧電体との接合面内で結晶異方性がない材料からなる支持層を形成する工程と、
(2)前記圧電基板の表面を研磨する工程と、
を含み、
前記支持層は、前記工程(1)において厚みが前記工程(2)の研磨後の圧電基板の厚み以下となるように形成するか、前記工程(2)又は前記工程(2)の前後において該支持層の表面を研磨して前記工程(2)の研磨後の圧電基板の厚み以下とする、
複合基板の製法。
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