WO2014010421A1 - Méthode d'inspection radiologique et dispositif associé - Google Patents

Méthode d'inspection radiologique et dispositif associé Download PDF

Info

Publication number
WO2014010421A1
WO2014010421A1 PCT/JP2013/067506 JP2013067506W WO2014010421A1 WO 2014010421 A1 WO2014010421 A1 WO 2014010421A1 JP 2013067506 W JP2013067506 W JP 2013067506W WO 2014010421 A1 WO2014010421 A1 WO 2014010421A1
Authority
WO
WIPO (PCT)
Prior art keywords
ray
ray image
simulation
defect
inspection
Prior art date
Application number
PCT/JP2013/067506
Other languages
English (en)
Japanese (ja)
Inventor
康敏 梅原
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2014010421A1 publication Critical patent/WO2014010421A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/646—Specific applications or type of materials flaws, defects

Definitions

  • the present invention relates to an X-ray inspection method and an X-ray inspection apparatus that perform inspection based on an X-ray image.
  • Patent Document 1 a semiconductor inspection method for quickly and accurately counting semiconductor cells using a scanning electron microscope (SEM) (see, for example, Patent Document 1).
  • SEM scanning electron microscope
  • Patent Document 2 a method for specifying a defect site to be inspected using a three-dimensional X-ray CT apparatus is known (see, for example, Patent Document 2).
  • the present invention has been made in view of the above, and an object of the present invention is to provide an X-ray inspection method and an X-ray inspection apparatus capable of performing non-destructive inspection of a defect to be inspected at high speed.
  • the shape of the inspection object from the X-ray image acquisition step of acquiring the X-ray image of the inspection object and a plurality of simulation X-ray images having different shapes of the inspection object, the shape of the inspection object.
  • the simulation X-ray image acquisition step for acquiring the closest simulation X-ray image, and the defect to be inspected based on the difference between the X-ray image and the simulation X-ray image acquired by the X-ray image acquisition step.
  • a defect detection step of detecting is detecting.
  • an X-ray inspection method and an X-ray inspection apparatus capable of performing non-destructive inspection of a defect to be inspected at high speed.
  • TSV through silicon via
  • FIG. 1 is a diagram illustrating a schematic configuration of an X-ray inspection apparatus 100 according to the present embodiment.
  • an X-ray inspection apparatus 100 includes an image processing apparatus 110 and an X-ray imaging apparatus 120.
  • the X-ray imaging apparatus 120 captures an X-ray image to be inspected, and the inspection target is imaged. Based on the X-ray image, the image processing apparatus 110 detects a defect to be inspected.
  • the image processing apparatus 110 includes an imaging control unit 111, an image processing unit 112, an image database 113, a simulation X-ray image acquisition unit 114, a defect detection unit 115, and a defect classification database 116.
  • the imaging control unit 111 controls the overall operation of the X-ray imaging apparatus 120 that captures an X-ray image to be inspected, and acquires the X-ray image to be inspected that is captured by the X-ray imaging apparatus 120.
  • the image processing unit 112 performs image processing such as brightness adjustment on the X-ray image acquired by the X-ray imaging apparatus 120.
  • a plurality of simulation X-ray images of TSVs to be inspected which are generated by simulation based on different shape parameters, are registered.
  • a method for generating a simulation X-ray image will be described later.
  • the simulation X-ray image acquisition unit 114 acquires a simulation X-ray image having the TSV shape closest to the TSV X-ray image captured by the X-ray imaging apparatus 120 from the image database 113.
  • the defect detection unit 115 detects a defect in the TSV filled with Cu from the X-ray image of the TSV imaged by the X-ray imaging apparatus 120 and the simulation X-ray image acquired by the simulation X-ray image acquisition unit 114. Further, when a defect is detected in the TSV, the defect detection unit 115 obtains a feature amount such as a defect size and a position, for example. Further, the defect detection unit 115 classifies the defect based on the obtained feature amount, registers the defect in the defect classification database 116, and determines whether the TSV to be inspected is good or bad.
  • defect classification database 116 defects detected by the defect detection unit 115 are classified and registered.
  • the X-ray imaging apparatus 120 includes a fork 121, a notch aligner 122, an optical microscope 123, a thickness measuring instrument 124, an X-ray source 125, a stage 126, an X-ray camera 127, and the like, and is connected to the image processing apparatus 110.
  • the X direction shown in the drawing is the left-right direction in the drawing parallel to the surface of the stage 126
  • the Y direction is a direction parallel to the surface of the stage 126 and perpendicular to the X direction
  • the Z direction is a direction perpendicular to the surface of the stage 126.
  • the fork 121 holds the silicon wafer on which the TSV is formed, and the notch aligner 122 adjusts the notch position.
  • the optical microscope 123 can observe the appearance of a silicon wafer placed on the stage 126.
  • the thickness measuring device 124 is a spectral interference type thickness measuring device, for example, and can measure the thickness of the silicon wafer.
  • the X-ray source 125 irradiates a silicon wafer placed on the stage 126 with X-rays, and an X-ray camera 127 provided on the opposite side of the X-ray source 125 with the stage 126 interposed therebetween, An X-ray image of a silicon wafer is acquired.
  • the X-ray camera 127 is configured to include, for example, an image intensifier, a CCD image sensor, and the like.
  • the image intensifier converts X-rays that have passed through the inspection target into visible light, and visible light that is incident on the CCD image sensor. Is converted into an electrical signal.
  • the output of the X-ray camera 127 is input to the imaging control unit 111 of the image processing apparatus 110 and acquired as an X-ray image to be inspected.
  • the X-ray camera 127 is provided so as to be movable in the X and Y directions in the figure, and by moving in the X and Y directions, an X-ray image of the inspection object placed on the stage 126 is, for example, an angle ⁇ with respect to the Z direction. Images can be taken from an inclined direction, and an inclined image can be obtained.
  • FIG. 2 illustrates an X-ray image captured by the X-ray imaging apparatus 120 according to the present embodiment.
  • FIG. 2 is an X-ray image of a silicon wafer taken from a direction inclined by 9.5 degrees with respect to the Z direction by the X-ray camera 127, and a portion that appears black is TSV.
  • the X-ray inspection apparatus 100 detects defects of TSVs formed on a silicon wafer based on such X-ray images.
  • the inclination angle of the X-ray image used for defect detection by the X-ray inspection apparatus 100 is not limited to the above example, and can be set as appropriate. It is also possible to detect defects based on an X-ray image that is not inclined.
  • FIG. 3 is a diagram illustrating a hardware configuration of the image processing apparatus 110 according to the present embodiment.
  • the image processing apparatus 110 includes a CPU 101, an HDD (Hard Disk Drive) 102, a ROM (Read Only Memory) 103, a RAM (Read and Memory) 104, an input device 105, a display device 106, and a recording medium I. / F unit 107, imaging device I / F unit 108, and the like, which are connected to each other by bus B.
  • a CPU 101 an HDD (Hard Disk Drive) 102, a ROM (Read Only Memory) 103, a RAM (Read and Memory) 104, an input device 105, a display device 106, and a recording medium I. / F unit 107, imaging device I / F unit 108, and the like, which are connected to each other by bus B.
  • the CPU 101 is an arithmetic device that implements control of the X-ray imaging device 120 and functions of the image processing device 110 by reading programs and data from the storage device such as the HDD 102 and the ROM 103 onto the RAM 104 and executing the processing. is there.
  • the CPU 101 functions as, for example, the imaging control unit 111, the image processing unit 112, the simulation X-ray image acquisition unit 114, the defect detection unit 115, and the like.
  • the HDD 102 is a non-volatile storage device that stores programs and data.
  • the stored programs and data include an OS (Operating System) that is basic software for controlling the entire image processing apparatus 110 and application software that provides various functions on the OS.
  • the HDD 102 functions as, for example, an image database 113 and a defect classification database 116.
  • the ROM 103 is a nonvolatile semiconductor memory (storage device) that can retain programs and data even when the power is turned off.
  • the ROM 103 stores programs and data such as BIOS (Basic Input / Output System), OS settings, and network settings that are executed when the image processing apparatus 110 is activated.
  • BIOS Basic Input / Output System
  • the RAM 104 is a volatile semiconductor memory (storage device) that temporarily stores programs and data.
  • the input device 105 includes, for example, a keyboard and a mouse, and is used to input each operation signal to the image processing device 110.
  • the display device 106 includes, for example, a display and displays an X-ray image to be inspected, a simulation X-ray image, a defect detection result, and the like imaged by the X-ray imaging device 120.
  • the recording medium I / F unit 107 is an interface with the recording medium 109.
  • the image processing apparatus 110 can read and / or write the recording medium 109 via the recording medium I / F unit 107.
  • the recording medium 109 includes a flexible disk, a CD, a DVD (Digital Versatile Disk), an SD memory card (SD Memory Card), a USB memory (Universal Serial Bus memory), and the like.
  • the imaging device I / F unit 108 is an interface connected to the X-ray imaging device 120.
  • the image processing apparatus 110 can perform data communication with the X-ray imaging apparatus 120 via the imaging apparatus I / F unit 108.
  • a network I / F unit or the like may be provided as an interface for connecting to the network in the image processing apparatus 110 so as to perform data communication with other devices.
  • the simulation X-ray image is generated based on a plurality of shape parameters of the TSV to be inspected.
  • 4A and 4B are diagrams illustrating the shape parameters of the TSV in the present embodiment.
  • the shape parameters of the TSV in the present embodiment include an opening radius r1, a hole middle maximum radius r2, a bottom radius r3, a radius r4 of a portion hemispherically etched at the bottom, a maximum The depth h1 to the radius portion and the depth h2 from the maximum radius portion to the bottom portion.
  • the types and number of parameters used for generating the simulation X-ray image are not limited to the above example, and for example, the parameters may be set corresponding to the shape of the TSV as shown in FIG. It can be set as appropriate according to the shape of the inspection object, the configuration of the X-ray imaging apparatus 120, and the like.
  • a plurality of simulation X-ray images as illustrated in FIG. 5 are generated based on the set shape parameters based on the TSV shape parameters set in this way, and are registered in the image database 113.
  • FIG. 6 is a diagram for explaining a simulation X-ray image generation method according to this embodiment.
  • the simulation X-ray image is generated, for example, by the image processing unit 112 of the image processing apparatus 110 and registered in the image database 113.
  • the image processing unit 112 When generating a simulation X-ray image, the image processing unit 112 first creates an aggregate of voxels 51 having different X-ray transmittances according to shape parameters. Next, when the aggregate of voxels 51 is irradiated with X-rays from an X-ray source 50 defined as a point light source, the amount of X-ray transmission is calculated based on the transmittance of each voxel 51, and the detector 52 A simulated X-ray image is generated by reproducing the amount reached as an image.
  • materials such as Air, Cu, and Si are defined as the voxels 51, and the voxels 51 are transmitted through the voxels 51 using the transmittances measured individually for the respective materials to the detector 52. Calculate the X-ray dose reached.
  • the voxel 51 is, for example, a 0.1 ⁇ m cube, and the transmittance of each voxel 51 is set to, for example, Air: 1, Cu: 0.981 / 1 ⁇ m, Si: 0.999 / 1 ⁇ m, and a simulation X-ray image is obtained. Can be generated. Note that the values such as the type, size, and transmittance of the voxel are not limited to these, and can be set as appropriate.
  • the image processing unit 112 calculates the amount of X-ray transmission through the lower surface of each voxel 51 in order from the side closer to the X-ray source 50 with respect to the created collection of voxels 51, and the X-ray dose reaching the detector 52 , A simulation X-ray image corresponding to the shape parameter as illustrated in FIG. 5 is generated.
  • FIG. 7 shows an example of a flowchart of simulation X-ray image generation processing by the image processing unit 112 in the present embodiment.
  • step S1 the image processing unit 112 focuses on the design value of the TSV, and the inclination angle (position of the X-ray camera 127) for imaging each shape parameter r1, r2, r3, r4, h1, h2, and the inspection object.
  • a plurality of simulation X-ray image generation conditions such as the above are set.
  • image generation conditions are set at intervals of 0.1 ⁇ m from 19 ⁇ m to 21 ⁇ m with a design value of 20 ⁇ m as the center, and a large number of image generation conditions with different shape parameters are set.
  • step S2 the image processing unit 112 generates a plurality of simulation X-ray images by the above-described method based on the set plurality of image generation conditions.
  • step S3 the image processing unit 112 performs image correction processing such as distortion correction on the generated simulation X-ray image.
  • step S4 the image processing unit 112 creates a library of the plurality of generated simulation X-ray images, the shape parameters, the inclination angles for imaging the inspection object, and the like.
  • step S5 the library data is registered in the image database 113, and the simulation X-ray image generation process ends.
  • the image processing unit 112 of the image processing apparatus 110 generates in advance a large number of simulation X-ray images having different shape parameters and registers them in the image database 113 by the above-described processing.
  • the simulation X-ray image in the image database 113 may be registered by downloading or the like that is generated by another device.
  • a simulation image of a TSV that does not include a defect is generated and registered as a simulation X-ray image.
  • a simulation image of a TSV having a defect can also be generated.
  • FIG. 8 is a diagram illustrating a flowchart of defect detection processing in the X-ray inspection apparatus 100 according to the present embodiment.
  • step S11 the X-ray imaging apparatus 120 captures an X-ray image of a TSV formed on a silicon wafer.
  • step S12 the image processing unit 112 of the image processing apparatus 110 performs image processing such as brightness adjustment on the captured X-ray image.
  • the simulation X-ray image acquisition unit 114 of the image processing apparatus 110 estimates the shape parameter of the TSV that is the inspection target of the captured X-ray image, and the simulation X-ray image having the closest TSV shape is the image database 113. Get from.
  • the simulation X-ray image acquisition unit 114 inputs initial shape parameters for estimating the TSV shape parameters.
  • the initial shape parameter for example, a design value of TSV can be used.
  • the simulation X-ray image acquisition unit 114 acquires a simulation X-ray image of the shape parameter input from the image database 113.
  • the simulation X-ray image acquisition unit 114 has a matching score as an evaluation value representing the similarity between the X-ray image captured by the X-ray imaging apparatus 120 and the acquired simulation X-ray image. Is calculated. For example, normalized correlation, geometric correlation, or orientation code conversion can be used for calculating the matching score.
  • step S16 the simulation X-ray image acquisition unit 114 compares the calculated matching score with a reference value (for example, 0.95). If the matching score is less than or equal to the reference value, the simulation X-ray image acquisition unit 114 optimizes the shape parameter in step S17. Thereafter, the simulation X-ray image acquisition unit 114 acquires again the simulation X-ray image of the shape parameter optimized in step S14 from the image database 113, and calculates the matching score in step S15.
  • a reference value for example 0.95
  • step S14 to step S17 is repeated until the matching score exceeds the reference value, and the shape parameter is optimized.
  • an optimization algorithm such as a genetic algorithm or a gradient method can be used.
  • the simulation X-ray image acquisition unit 114 acquires a simulation X-ray image of the optimized shape parameter from the image database 113 in step S18.
  • step S ⁇ b> 19 the defect detection unit 115 performs TSV alignment between the X-ray image captured by the X-ray imaging apparatus 120 and the simulation X-ray image acquired by the simulation X-ray image acquisition unit 114.
  • the defect detection is performed by calculating the luminance difference after adjusting the luminance.
  • 9A to 9C and 10A to 10C are diagrams illustrating examples of TSV defect detection results by the X-ray inspection apparatus 100 according to the present embodiment.
  • 9A is an X-ray image with an inclination angle of 0 degree
  • FIG. 9B is a simulation X-ray image
  • FIG. 9C is a difference image between the X-ray image and the simulation image.
  • 10A is an X-ray image with an inclination angle of 15 degrees
  • FIG. 10B is a simulation X-ray image
  • FIG. 10C is a difference image between the X-ray image and the simulation image.
  • 9C and 10C are images showing the difference in luminance between the X-ray image and the simulation X-ray image, and are displayed in white as the luminance difference increases. For example, when there is a defect in TSV filled with Cu, the defect appears as a difference in luminance in the difference image, as shown in white portions in FIGS. 9C and 10C.
  • the defect detection unit 115 performs defect detection in step S19, and then extracts defect feature values in step S20.
  • the feature amount for example, parameters such as coordinates, area, center of gravity, and coordinates when a defect is approximated to an ellipse are extracted.
  • the defect detection unit 115 classifies the detected defect based on the extracted feature amount and registers it in the defect classification database 116.
  • a subspace method, a k-nearest neighbor method, a multilayer perceptron method which is a kind of neural network, or the like can be used.
  • the defect detection unit 115 After registering the defect detection unit 115 in the defect classification database 116, in step S22, the defect detection unit 115 detects the TSV to be inspected based on the feature amount of the defect detected by the defect detection unit 115 and the defect classification result. A pass / fail judgment is performed and the process is terminated. The pass / fail judgment is performed based on, for example, a comparison between the size of the defect and a predetermined threshold, or whether or not the defect exists in a predetermined region of the TSV.
  • the X-ray inspection apparatus 100 it is possible to inspect a defect to be inspected nondestructively. Further, for example, since defects can be detected by a simple process compared with the case of reproducing a CT image in an X-ray CT apparatus, high-speed defect inspection can be realized. Furthermore, it is possible to detect a foreign substance included in the inspection target from the difference image between the X-ray image and the simulation X-ray image by the same processing. Therefore, the X-ray inspection apparatus 100 according to the present embodiment can detect a defect or a foreign object to be inspected at a high speed and can inspect without cutting or the like, and is used for, for example, in-line inspection in a semiconductor manufacturing process. Can do. Further, in the present embodiment, the TSV filled with Cu has been described. Needless to say, the present invention can also be applied to a TSV filled with a conductor material including other metals such as W in addition to Cu. Yes.
  • a server apparatus When performing in-line inspection in a semiconductor manufacturing process or the like, a server apparatus connected to the image processing apparatus 110 of the plurality of X-ray inspection apparatuses 100 via a network or the like is provided, and the server apparatus detects a defect or a foreign object. It can also be configured to do so.
  • the server device is provided with an image processing unit 112, an image database 113, a simulation X-ray image acquisition unit 114, a defect detection unit 115, a defect classification database 116, etc. The results can be collected and managed.

Abstract

Cette invention a pour objectif de pourvoir à une méthode d'inspection radiologique et à un dispositif associé qui peut procéder à l'inspection des défauts d'un sujet soumis à inspection à grande vitesse et sans interruption. Pour ce faire, la méthode d'inspection radiologique selon l'invention comprend : une étape d'acquisition d'une image radiologique destinée à acquérir une image radiologique du sujet soumis à inspection ; une étape d'acquisition d'une image radiologique simulée destinée à acquérir une image radiologique simulée ayant la forme la plus proche possible du sujet soumis à inspection parmi une pluralité d'images radiologiques simulées ayant des formes de sujets soumis à inspection différentes ; et une étape de détection de défauts destinée à détecter les défauts du sujet soumis à inspection sur la base de la différence entre l'image radiologique et l'image radiologique simulée acquise dans l'étape d'acquisition d'une image radiologique simulée.
PCT/JP2013/067506 2012-07-09 2013-06-26 Méthode d'inspection radiologique et dispositif associé WO2014010421A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012153610A JP2014016239A (ja) 2012-07-09 2012-07-09 Ｘ線検査方法及びｘ線検査装置
JP2012-153610 2012-07-09

Publications (1)

Publication Number Publication Date
WO2014010421A1 true WO2014010421A1 (fr) 2014-01-16

Family

ID=49915885

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/067506 WO2014010421A1 (fr) 2012-07-09 2013-06-26 Méthode d'inspection radiologique et dispositif associé

Country Status (2)

Country Link
JP (1) JP2014016239A (fr)
WO (1) WO2014010421A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107209130A (zh) * 2015-02-09 2017-09-26 株式会社尼康 一种x射线测量设备的图像重建方法、结构物的制造方法、x射线测量设备的图像重建程序以及x射线测量设备

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2927944A1 (fr) * 2014-04-04 2015-10-07 Nordson Corporation Appareil d'inspection aux rayons X pour plaquettes semi-conductrices
JP6791479B2 (ja) * 2016-06-06 2020-11-25 富士電機株式会社 検査システム
JP7250301B2 (ja) * 2018-06-29 2023-04-03 株式会社イシダ 検査装置、検査システム、検査方法、検査プログラム及び記録媒体

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59192944A (ja) * 1983-04-15 1984-11-01 Hitachi Ltd パタ−ン欠陥分類方法
JPH02132353A (ja) * 1988-11-14 1990-05-21 Toshiba Corp マスク検査装置
JPH02138855A (ja) * 1988-08-26 1990-05-28 Hitachi Ltd Ｘ線透過画像によるはんだ付部の検査方法及びその装置
JPH02238313A (ja) * 1989-03-13 1990-09-20 Toshiba Corp マスク検査装置
JPH06118029A (ja) * 1992-10-08 1994-04-28 Matsushita Electric Ind Co Ltd Ｘ線検査装置およびｘ線検査方法
JPH1194761A (ja) * 1997-09-19 1999-04-09 Hitachi Ltd パターン検査装置
JPH11183393A (ja) * 1997-10-13 1999-07-09 Mitsubishi Electric Corp パターン欠陥検査装置及びパターン欠陥検査方法
JP2000035406A (ja) * 1998-06-22 2000-02-02 Mitsubishi Electric Inf Technol Center America Inc 物体レンダリングシステム及び方法
JP2005207827A (ja) * 2004-01-21 2005-08-04 Nagoya Electric Works Co Ltd Ｘ線検査装置、ｘ線検査方法およびｘ線検査装置の制御プログラム
JP2012088291A (ja) * 2010-09-23 2012-05-10 Meiwa E Tec:Kk Ｘ線検査装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59192944A (ja) * 1983-04-15 1984-11-01 Hitachi Ltd パタ−ン欠陥分類方法
JPH02138855A (ja) * 1988-08-26 1990-05-28 Hitachi Ltd Ｘ線透過画像によるはんだ付部の検査方法及びその装置
JPH02132353A (ja) * 1988-11-14 1990-05-21 Toshiba Corp マスク検査装置
JPH02238313A (ja) * 1989-03-13 1990-09-20 Toshiba Corp マスク検査装置
JPH06118029A (ja) * 1992-10-08 1994-04-28 Matsushita Electric Ind Co Ltd Ｘ線検査装置およびｘ線検査方法
JPH1194761A (ja) * 1997-09-19 1999-04-09 Hitachi Ltd パターン検査装置
JPH11183393A (ja) * 1997-10-13 1999-07-09 Mitsubishi Electric Corp パターン欠陥検査装置及びパターン欠陥検査方法
JP2000035406A (ja) * 1998-06-22 2000-02-02 Mitsubishi Electric Inf Technol Center America Inc 物体レンダリングシステム及び方法
JP2005207827A (ja) * 2004-01-21 2005-08-04 Nagoya Electric Works Co Ltd Ｘ線検査装置、ｘ線検査方法およびｘ線検査装置の制御プログラム
JP2012088291A (ja) * 2010-09-23 2012-05-10 Meiwa E Tec:Kk Ｘ線検査装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SUEOKA, K ET AL.: "TSV Diagnostics by X-ray Microscopy", ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC), 2011 IEEE 13TH, 7 December 2011 (2011-12-07), pages 695 - 698 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107209130A (zh) * 2015-02-09 2017-09-26 株式会社尼康 一种x射线测量设备的图像重建方法、结构物的制造方法、x射线测量设备的图像重建程序以及x射线测量设备
EP3258251A4 (fr) * 2015-02-09 2018-10-17 Nikon Corporation Procédé de reconstruction d'image pour dispositif de mesure par rayons x, procédé de fabrication de la structure, programme de reconstruction d'image pour dispositif de mesure par rayons x et dispositif de mesure par rayons x
US20200284735A1 (en) * 2015-02-09 2020-09-10 Nikon Corporation Image reconstruction method for x-ray measuring device, structure manufacturing method, image reconstruction program for x-ray measuring device, and x-ray measuring device
US11860111B2 (en) 2015-02-09 2024-01-02 Nikon Corporation Image reconstruction method for X-ray measuring device, structure manufacturing method, image reconstruction program for X-ray measuring device, and X-ray measuring device

Also Published As

Publication number Publication date
JP2014016239A (ja) 2014-01-30

Similar Documents

Publication Publication Date Title
TWI774708B (zh) 用於半導體結構之檢驗之方法及系統
KR102131897B1 (ko) 지형적인 속성들을 사용하는 결함 분류
KR102083706B1 (ko) 반도체 검사 레시피 생성, 결함 리뷰 및 계측을 위한 적응적 샘플링
TWI669766B (zh) 將三維表現用於缺陷相關之應用
KR102132328B1 (ko) Ｃａｄ-기반 컨텍스트 속성들을 사용하는 결함 분류
WO2013164971A1 (fr) Procédé de contrôle radiographique par rayons x et dispositif de contrôle radiographique par rayons x
TWI580952B (zh) 使用表面高度屬性用於分級缺陷的方法與裝置
JP5543872B2 (ja) パターン検査方法およびパターン検査装置
JP2004219343A (ja) 微細パターンの３次元形状測定方法
TW201602565A (zh) 使用高解析度全晶粒圖像資料進行檢查
WO2010024064A1 (fr) Procédé de détection des défauts et dispositif associé
JP2017516107A (ja) 光学式検査及び光学式レビューからの欠陥属性に基づく電子ビームレビューのための欠陥サンプリング
US20090084953A1 (en) Method and system for observing a specimen using a scanning electron microscope
WO2014010421A1 (fr) Méthode d'inspection radiologique et dispositif associé
TW201925757A (zh) 寬頻晶圓缺陷偵測系統及寬頻晶圓缺陷偵測方法
JP2024012432A (ja) 検査システム、及び非一時的コンピュータ可読媒体
US11454596B2 (en) Orientation determination and mapping by stage rocking electron channeling and imaging reconstruction
TWI388822B (zh) 於利用帶電粒子束成像之樣品檢測中判定缺陷之方法以及系統
TWI688763B (zh) 用於缺陷之分類的系統及方法
WO2023248583A1 (fr) Dispositif, procédé et programme de traitement d'informations

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13817556

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13817556

Country of ref document: EP

Kind code of ref document: A1