WO2013190844A1 - Dispositif de fixation de carte de sonde, dispositif et procédé d'inspection de sonde et carte de sonde - Google Patents

Dispositif de fixation de carte de sonde, dispositif et procédé d'inspection de sonde et carte de sonde Download PDF

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Publication number
WO2013190844A1
WO2013190844A1 PCT/JP2013/003865 JP2013003865W WO2013190844A1 WO 2013190844 A1 WO2013190844 A1 WO 2013190844A1 JP 2013003865 W JP2013003865 W JP 2013003865W WO 2013190844 A1 WO2013190844 A1 WO 2013190844A1
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WO
WIPO (PCT)
Prior art keywords
probe card
probe
support
connection ring
card
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Application number
PCT/JP2013/003865
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English (en)
Japanese (ja)
Inventor
山崎　俊彦
Original Assignee
旭化成エレクトロニクス株式会社
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Application filed by 旭化成エレクトロニクス株式会社 filed Critical 旭化成エレクトロニクス株式会社
Priority to KR1020147008159A priority Critical patent/KR101569303B1/ko
Priority to JP2014520958A priority patent/JP5816749B2/ja
Publication of WO2013190844A1 publication Critical patent/WO2013190844A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature

Definitions

  • the present invention relates to a probe card fixing device, a probe inspection device, a probe inspection method, and a probe card, and in particular, a probe that can suppress fluctuations in the tip position of a probe needle caused by thermal expansion of the probe card or card holder.
  • the present invention relates to a card fixing device, a probe inspection device, a probe inspection method, and a probe card.
  • a probe card used for inspecting an IC chip formed on a wafer has a card substrate and a plurality of probe needles (also called needles).
  • the electrical characteristics of the IC chip are measured by bringing a plurality of probe needles into contact with the electrode pads of the IC chip.
  • the electrical characteristics of an IC chip are measured with the wafer at a high temperature (see, for example, Patent Documents 1 to 3).
  • the pitch of probe needles has been reduced, and there has been a demand for more accurate alignment between probe needles and electrode pads.
  • JP-A-7-98330 Japanese Patent Laid-Open No. 2009-200272 Japanese Patent Laid-Open No. 2005-181284
  • the stage on which the wafer is fixed is heated by a heater built in the stage. Thereby, the wafer is heated to a preset temperature.
  • the probe card since the probe card is arranged above the wafer, the lower surface of the probe card is heated by the radiant heat from the wafer and the conduction heat from the probe needle in contact with the electrode pad, and the temperature rises. .
  • the temperature difference between the upper and lower surfaces of the probe card is due to the thickness of the probe card, low heat transfer compared to metal, and the absence of a high-temperature heat source on the upper surface side. (Thermal gradient) occurs.
  • the probe card due to the temperature difference between the upper and lower surfaces, the probe card has a problem that “warping deformation that protrudes downward” occurs.
  • the card holder that holds the probe card also expands due to the influence of radiant heat, causing deformation.
  • the degree of deformation varies depending on the positional relationship between the wafer and the probe card (card holder). For example, when inspecting the IC chip 411 located on the outer periphery of the wafer 410 and when inspecting the IC chip 411 located in the center of the wafer 410, the magnitude of radiant heat received by the lower surface 401 of the probe card 400 is large. There is a difference in the warpage deformation.
  • FIGS. 18A and 18B when inspecting the IC chip 411 located on the outer periphery of the wafer 410, a part of the probe card 400 is moved from the upper side to the outer side of the stage 420. Since it has come out, the radiant heat which the part which has come out outside receives is small, and the temperature of the probe card 400 becomes relatively low. Therefore, the warp deformation that occurs in the probe card 400 is small. When the warp deformation is small, the downward displacement amount of the tip position of the probe needle 402 is small. Therefore, the force (that is, the pressing pressure) with which the probe needle 402 presses the electrode pad is a preset value (that is, a set value). Within the range of. For this reason, as shown in FIG. 18B, the needle trace formed on the electrode pad by the contact with the probe needle 402 can be small.
  • the probe card 400 when inspecting the IC chip 411 located at the center of the wafer 410, the probe card 400 does not protrude from above the stage 420.
  • the lower surface 401 receives a large amount of radiant heat, and the temperature of the probe card 400 becomes relatively large. Therefore, the warp deformation generated in the probe card 400 is large.
  • warping deformation is large, the amount of downward displacement of the tip position of the probe needle 402 is large, and the pressing pressure exceeds the set value. For this reason, as shown in FIG.19 (b), the needle trace which remains in an electrode pad becomes large.
  • the tip of the probe needle 402 protrudes while rubbing the electrode pad to reach the passivation film, and there is a possibility that the passivation film is rubbed and damaged.
  • the tip of the probe needle 402 may break through the electrode pad and destroy the device structure below.
  • the cited document 1 describes that the displacement of the needle position is reduced by fixing the probe needle to a support plate having a small linear expansion coefficient.
  • the needle position is affected by the expansion (i.e., thermal expansion) due to the heat of the substrate.
  • the vertical linear expansion of the free-cutting ceramic needle presser cannot be ignored.
  • Reference 2 describes that heat dissipation from the probe substrate to the reinforcing plate is enhanced by interposing a heat transfer member between the probe substrate and the reinforcing plate.
  • cited document 3 discloses a card holder for holding a probe card.
  • the card holder is provided with a plurality of cut portions and through holes (hereinafter referred to as slits) from the opening end of the opening located at the center thereof toward the outer peripheral end.
  • slits cut portions and through holes
  • the present invention has been made in view of such circumstances, and a probe card fixing device capable of suppressing fluctuations in the tip position of the probe needle caused by thermal expansion of the probe card or the card holder, An object is to provide a probe inspection device, a probe inspection method, and a probe card.
  • a probe card fixing device is a probe card fixing device for fixing a probe card to a prober, and a connection ring for fixing the probe card to a housing of the prober, A card holder for sandwiching an outer peripheral portion of the probe card between the connection ring and a lock device for fixing a central portion of the probe card and the connection ring.
  • the “card holder” is, for example, an annular support plate that holds the outer periphery of the probe card.
  • the “connection ring” is, for example, an annular relay board that electrically connects a probe card and a tester.
  • the locking device includes a first component fixed to the center portion of the probe card, a second component fixed to the connection ring, and the first component. And a third part for connecting and fixing the second part.
  • the first component includes a support member disposed apart from a surface of the probe card that is in contact with the connection ring, and a space between the probe card and the support member.
  • a plurality of struts interposed between the plurality of struts, and the plurality of struts may be made of a material having a smaller linear expansion coefficient than the second component.
  • a probe inspection apparatus includes the above-described probe card fixing device and a probe card, and the probe card fixing device is attached to the probe card.
  • the probe inspection method when performing probe inspection using a probe card whose outer peripheral portion is sandwiched between a card holder and a connection ring, a side of the probe card that contacts the connection ring in advance.
  • a locking device is disposed on the surface of the probe card, and the central portion of the probe card and the connection ring are fixed using the locking device.
  • a probe card includes a probe card substrate in which a tip of a probe needle is positioned on one surface side, a support member disposed separately on the other surface side of the probe card substrate, A plurality of struts interposed between the probe card substrate and the support member, wherein the plurality of struts are a first strut and a central portion of the probe card substrate than the first strut A second support column disposed away from the first support column, wherein the second support column has a thermal expansion coefficient larger than that of the first support column.
  • the plurality of struts each include a plurality of the first struts and the second struts, and the plurality of first struts are formed on the probe card substrate.
  • the plurality of second support columns are arranged at equal intervals on a first circumference having a center of a circle in the center, and the first circumference is concentric with the first circumference. It is good also as arrange
  • the plurality of support columns further include a third support column disposed on a center portion of the probe card substrate, and the coefficient of thermal expansion of the third support column is the first support column. It may be characterized by being smaller than the thermal expansion coefficient of the column.
  • the central portion of the probe card substrate is a so-called dead space in which it is difficult to place electronic components.
  • the reason for the dead space in the center is that it is often desirable to place electronic components as close as possible to the connection point between the probe needle and the probe card board in order to improve electrical characteristics, while the probe needles are arranged radially. This is because the center of the probe card substrate is often GND, and as a result, the number of components mounted on the probe card is extremely small.
  • the number of the second support columns may be larger than that of the first support columns.
  • a portion (for example, the central portion) inside the outer peripheral portion of the probe card is connected and fixed to the connection ring by the probe card fixing device.
  • the connection ring can be fixed to the housing of the prober.
  • the prober housing is away from the heat source for high-temperature inspection (for example, a heater in the stage), and the thermal fluctuation is small.
  • the probe card support point can be a housing with small thermal fluctuations, it suppresses the probe card's downward warping deformation and the downward movement of the probe card due to the displacement and deformation of the card holder. can do. Thereby, the fluctuation
  • a force against warping deformation is applied to the probe card substrate due to the difference in thermal expansion coefficient between the first and second support columns.
  • Sectional drawing which shows the principal part structural example of the probe test
  • the perspective view which shows the structural example of the lower part 51 and the upper part 61 of PCLS50.
  • the top view which shows the structural example of PCLS50.
  • the conceptual diagram which shows force F1, F2 and F3 which are added to the probe card 10 at the time of a high temperature test
  • FIG. The figure which shows the modification of the probe card 300.
  • FIG. The figure which shows the structural example of the support plate 330 which concerns on 4th Embodiment of this invention.
  • FIG. 1 is a cross-sectional view showing a configuration example of a main part of a probe inspection apparatus 100 according to the first embodiment of the present invention.
  • the probe inspection apparatus 100 is an apparatus for inspecting the electrical characteristics and functions of an IC chip formed on a wafer, for example.
  • the probe inspection apparatus 100 holds a stage 1 on which a wafer is placed and fixed, a housing 3, a probe card 10 disposed above the stage 1, and the probe card 10.
  • a card holder 20, a connection ring 30 for electrically connecting the probe card 10 and a tester (not shown), and a PCLS (Probe Card Lock System) 50 are provided.
  • Stage 1 and housing 3 are part of a prober.
  • the stage 1 incorporates a heat source such as a heater.
  • the wafer mounted on the stage 1 is heated by a heater built in the stage 1.
  • the wafer can be heated to a preset temperature and a high temperature inspection can be performed.
  • the housing 3 covers a part of the upper surface side and the side surface side of the prober, and is made of a highly rigid metal such as a coated iron plate or stainless steel plate.
  • the probe card 10 has a card substrate 11.
  • the card substrate 11 is made of, for example, glass epoxy.
  • the shape (namely, planar shape) of the card substrate 11 in plan view is, for example, a circle.
  • the card substrate 11 has a diameter of 100 to 300 mm and a thickness of 3.2 to 4.8 mm.
  • a circuit or an electronic component (not shown) is attached on the upper surface 11a of the card substrate 11.
  • a plurality of probe needles 13 connected to the above-described circuits and electronic components are attached to the card substrate 11.
  • the probe needle 13 is fixed by a needle presser 15 arranged on the lower surface 11 b side of the card substrate 11, and its tip 13 a is located on the lower surface 11 b side of the card substrate 11.
  • the number and arrangement interval of the probe needles 13 correspond to the number and arrangement interval of the electrode pads of the inspection object (that is, the IC chip formed on the wafer). Further, the card substrate 11 is provided with a plurality of screw holes penetrating between the upper surface 11a and the lower surface 11b in order to connect to a plurality of pillars described later.
  • the card holder 20 holds the probe card 10 in a detachable manner.
  • the planar shape of the card holder 20 is, for example, an annular shape (that is, a shape having an opening at the center). Further, a thin plate portion 21 having a smaller thickness than the other portions is provided on the edge of the opening of the card holder 20. The outer peripheral portion of the probe card 10 is placed on the thin plate portion 21. Moreover, the level
  • the step 23 is formed along the outer periphery of the probe card 10 and restricts the movement of the probe card 10 placed on the thin plate portion 21 in the horizontal direction (for example, X and Y axis directions).
  • a clamp mechanism is provided on the outer periphery of the card holder 20 to be connected and fixed to the housing 3.
  • the card holder 20 is close to the stage 1 and is disposed at a position where it is easily subjected to heat during a high temperature inspection. For this reason, it is preferable that the card holder 20 is made of a material having a relatively small linear expansion coefficient, such as Novinite (registered trademark). Novinite (registered trademark) has a linear expansion coefficient of, for example, 2 to 5 ppm / ° C. Thereby, it can suppress that the card holder 20 thermally expands at the time of a high temperature test
  • Novinite registered trademark
  • the connection ring 30 is for electrically connecting, for example, a test head of a tester (not shown) and the probe card 10.
  • the connection ring 30 is provided with a plurality of pogo pins (that is, movable pins whose tips are extended and contracted by springs) 31 penetrating therethrough.
  • the connection ring 30 is disposed on the upper surface 11 a side of the probe card 10.
  • One end of the pogo pin 31 is in contact with the electrode portion of the probe card 10 (that is, in contact with the probe card 10), and the other end of the pogo pin 31 is in contact with the electrode portion of the test head.
  • the outer peripheral portion of the probe card 10 is sandwiched from above and below by the thin plate portion 21 of the card holder 20 and the pogo pin 31 of the connection ring 30.
  • connection ring 30 is connected and fixed to the housing 3 by passing the screws 35 through the screw holes in the outer peripheral portion and the screw holes in the housing 3 (that is, screwing). Have been).
  • the PCLS 50 is disposed on the upper surface 11 a side of the probe card 10, that is, on the surface in contact with the connection ring 30 of the probe card 10, and is connected to a portion (for example, the central portion) inside the outer peripheral portion of the probe card 10. 30 is connected and fixed.
  • the PCLS 50 includes, for example, a lower part 51 fixed to the center part of the probe card 10, an upper part 61 fixed to the connection ring 30, an upper part 61 and a lower part 51. And a screw 71 for connecting and fixing.
  • the lower part 51 includes a lower support portion 52 that is spaced apart from the upper surface 11a of the probe card 10, a plurality of columns 53 that are interposed between the probe card 10 and the lower support portion 52, and a lower side.
  • a screw 54 for fixing the support portion 52 to one end side of each column 53 and a screw 55 for fixing the probe card 10 to the other end of each column 53 are provided.
  • the lower support portion 52 supports the probe card 10.
  • ⁇ means a coefficient of thermal expansion.
  • 0 to 100 ° C. means a value of coefficient of thermal expansion in the range of 0 to 100 ° C.
  • the stainless steel material is suitable as a material for the lower support portion 52 because it is inexpensive, easy to process, and can easily obtain high rigidity.
  • FIG. 2A and 2B are perspective views showing a configuration example of the lower part 51 and the upper part 61 of the PCLS 50.
  • FIG. 2A the shape of the lower support portion 52 is, for example, a cross shape.
  • the size of the lower support 52 is, for example, a length from one end to the other end of the cross of 100 to 300 mm, and a thickness of 5 to 20 mm.
  • the lower support portion 52 has a plurality of screw holes for connecting to the respective pillars 53 and a connection to the upper part 61 (that is, for passing the screw 71). Each screw hole is provided.
  • Each strut 53 connects the probe card 10 and the support member.
  • the length of each column 53 is, for example, 10 to 20 mm.
  • the length of each column 53 corresponds to the distance between the probe card 10 and the lower support portion 52.
  • pillar 53 is provided with the screw hole penetrated in the length direction (for example, Z-axis direction). By passing the screw 54 through the screw hole provided in the lower support portion 52 and the screw hole of the support post 53, each support post 53 is connected and fixed to the lower support portion 52.
  • each column 53 is connected and fixed to the probe card 10.
  • pillar 53 also consist of a material with a very small thermal expansion coefficient, such as a super invar alloy.
  • the material constituting the column 53 and the screws 54 and 55 is not limited to Super Invar alloy.
  • between the screw 54 and the screw 55 which opposes, even when the screws 54 and 55 thermally expand, space should be ensured so that these may not press each other. preferable.
  • the upper part 61 includes an upper support part 62, a connection part 63 that connects the upper support part 62 to the connection ring 30, a screw 64 for fixing the upper support part 62 to the connection part 63, and a connection part 63.
  • a screw 65 (for example, see FIG. 2B) for fixing to the ring 30 is provided.
  • the upper support portion 62 supports the probe card 10.
  • the upper support 62 is made of, for example, a stainless steel material such as SUS430 or SUS410 according to JIS standards. As described above, the stainless steel material is inexpensive and easy to process, and high rigidity can be easily obtained. For this reason, the stainless steel material is suitable not only for the lower support portion 52 but also for the upper support portion 62.
  • the shape of the upper support portion 62 is, for example, a cross shape.
  • the size of the upper support 62 is, for example, a length from one end to the other end of the cross of 100 to 300 mm and a thickness of 5 to 20 mm.
  • the upper support portion 62 has a plurality of screw holes for connecting to the connecting portion 63 and a portion for connecting to the lower part 51 (that is, for passing the screw 71). Each screw hole is provided.
  • the connecting part 63 connects and fixes the PCLS 50 to the connection ring 30 and is made of, for example, a stainless steel material such as SUS430 or SUS410 according to JIS standards.
  • the shape of the connecting portion 63 is, for example, an annular shape.
  • the outer peripheral surface of the connecting portion 63 is along the inner peripheral surface of the connection ring 30.
  • the connecting portion 63 is provided with a plurality of screw holes for connecting to the upper support portion 62 and a plurality of screw holes for connecting to the connection ring 30.
  • the screw 64 By passing the screw 64 through the screw hole of the upper support part 62 and the screw hole provided in the connection part 63, the upper support part 62 is connected and fixed to the connection part 63.
  • the connecting portion 63 is fixedly connected to the connection ring by passing the screw 65 through the screw hole of the connecting portion 63.
  • the screws 64 and 65 are made of, for example, a stainless steel material.
  • FIG. 3 is a plan view illustrating a configuration example of the PCLS 50. As shown in FIG. 3, the upper support portion 62 is larger than the lower support portion 52 in plan view, for example. The upper support portion 62 is disposed on the lower support portion so as to cover the entire upper surface of the lower support portion 52, and is fixed with screws 71.
  • FIG. 4 is a conceptual diagram showing the forces F1, F2 and F3 applied to the probe card 10 during the high temperature inspection.
  • the stage is heated by energizing a heater built in the stage while the wafer is fixed on the stage shown in FIG. As a result, the temperature of the wafer rises through the stage to, for example, 150 ° C. to 200 ° C.
  • the probe needle of the probe card 10 is brought into contact with the electrode pad of the IC chip formed on the wafer, and the electrical characteristics of the IC chip are measured.
  • the card holder 20 that holds the probe card 10 also receives thermal radiation from the wafer and the stage and thermally expands, and tends to be displaced or deformed downward.
  • a force F2 is generated in the probe card 10 to move downward due to gravity.
  • the inner side (for example, the center part) of the outer periphery of the probe card 10 is connected and fixed to the connection ring 30 by the PCLS 50.
  • the connection ring 30 is fixed to the housing 3 of the prober.
  • the housing 3 of the prober is away from the heat source such as a stage, and the heat fluctuation is small.
  • the PCLS 50 can apply the force F3 having the opposite direction to the forces F1 and F2 to the probe card 10 using the prober housing 3 as a support point.
  • This force F3 cancels the forces F1 and F2, and reduces the forces F1 and F2.
  • the amount of radiant heat received by the probe card 10 and the card holder 20 varies, and the forces F1 and F2 also vary.
  • the probe needle moves from the center of the wafer to the outer periphery
  • the force F1 and F2 also vary.
  • FIG. 18 when the probe needle moves from the center of the wafer to the outer periphery, when moving to the cleaning area, at least a part of the probe card 10 moves away from above the stage 1.
  • the probe card 10 is moved away from the upper side of the stage 1
  • the amount of radiant heat received by the lower surface 11b of the probe card 10 is reduced, so that the temperature difference between the upper and lower surfaces is reduced.
  • the distribution and size of the force F ⁇ b> 1 that causes “downward convex warping deformation” in the probe card changes.
  • the force F3 transmitted from the PCLS 50 to the probe card 10 also changes, for example, according to the law of action / reaction of the force at each column 53. For this reason, also when inspecting the IC chip located on the outer peripheral portion of the wafer, the force F3 cancels the forces F1 and F2 and reduces the forces F1 and F2.
  • the lower part 51 corresponds to the “first part” of the present invention
  • the upper part 61 corresponds to the “second part” of the present invention
  • the screw 71 corresponds to the “first part” of the present invention. 3 parts ".
  • the lower support portion 52 corresponds to the “support member” of the present invention.
  • the PCLS 50 corresponds to the “lock device” of the present invention.
  • the combination of the connection ring 30, the card holder 20, and the PCLS 50 corresponds to the “probe card fixing device” of the present invention.
  • the first embodiment of the present invention has the following effects.
  • (1) The center portion of the probe card 01 is connected and fixed to the connection ring 30 by the PCLS 50.
  • the connection ring 30 is fixed to the housing 3 of the prober.
  • the prober casing 3 is away from the heat source for high temperature inspection, and the thermal fluctuation is small. Since the housing 3 with small thermal fluctuation can be used as a support point of the probe card 10, the probe card 10 is caused by “warping deformation protruding downward” due to thermal expansion of the probe card 10, or by displacement or deformation of the card holder 20. The movement to the lower side can be suppressed.
  • the probe needle 13 can be restrained from changing in the position of the tip 13a (that is, the tip position) in a non-contact state where it is not in contact with the electrode pad or the like of the IC chip.
  • the amount of displacement of can be made extremely small.
  • the PCLS 50 is a screw for connecting and fixing the lower part 51 fixed to the center of the probe card 10, the upper part 61 fixed to the connection ring 30, and the lower part 51 and the upper part 61. 71.
  • the PCLS 50 can be easily attached to and detached from the probe card 10 and the connection ring 30.
  • the lower part is attached to the probe card 10 in advance.
  • 51 is attached.
  • the upper part 61 is attached to the connection ring 30 in advance.
  • the lower part 51 and the upper part 61 are connected and fixed using the screw 71.
  • the screw 71 is removed from the screw hole before the probe card 10 and the connection ring 30 are unloaded from the prober, and the connection state of the lower part 51 and the upper part 61 is released.
  • the probe card 10 and the connection ring 30 are unloaded from the prober.
  • the lower part 51 is removed from the probe card 10.
  • the upper part 61 is removed from the connection ring 30.
  • casing 3 of a prober may be arbitrary timings, if it is before performing a probe test
  • each column 53 is made of a super invar alloy having a very small linear expansion coefficient.
  • pillar 53 thermally expands and pushes the probe card 10 below. It is possible to prevent the probe card 10 from being “warped and deformed downward” due to thermal expansion of each column 53.
  • FIG. 6 is a graph showing the result of verifying the effect of PCLS performed by the present inventor.
  • the horizontal axis in FIG. 6 indicates time.
  • the vertical axis represents the displacement [ ⁇ m] of the tip position of the probe needle.
  • the plus (+) on the vertical axis represents the amount of displacement toward the + side (ie, the upper side) in the Z-axis direction, and the minus ( ⁇ ) represents the amount of displacement toward the ⁇ side (ie, the lower side) in the Z-axis direction.
  • a wafer is placed on the stage 1 of the prober, and in this state, the stage 1 is heated to 150 ° C. to perform a high temperature inspection. Then, the tip position of the probe needle 13 in the non-contact state was measured every 5 minutes, and the amount of displacement in the Z-axis direction with respect to the tip position (initial value: 0) before the high temperature inspection was recorded. This measurement and recording were performed by continuously inspecting four wafers at a high temperature. As shown in FIG. 6, it was confirmed that the variation of the tip position of the probe needle 13 was within ⁇ 5 ⁇ m in each of the four wafers.
  • the average value of the displacement amount in the first sheet was lower than the average value of the displacement amount in the second and subsequent sheets.
  • the present inventor is immediately after starting the high temperature inspection, and the temperature of each device constituting the probe inspection apparatus 100 such as the probe card 10, the card holder 20, the connection ring 30, and the PCLS 50 is stable. I think it was related to what I didn't do.
  • the shapes of the lower support portion 52 and the upper support portion 62 are not limited to this.
  • the lower support portion 52 may have a cross shape and the upper support portion 62 may have a rectangular shape extending in one direction.
  • the lower support portion 52 may have a cross shape and the upper support portion 62 may have a circular shape. Even in such a case, the same effects as the effects (1) to (3) of the first embodiment are obtained.
  • FIG. 9 is a diagram showing a configuration example of a probe card 200 according to the second embodiment of the present invention, in which FIG. 9A is a plan view, FIG. 9B is a side view, and FIG. -X 'sectional view.
  • the probe card 200 includes a probe card substrate 110, a support member 130 that is spaced from the upper surface 111 of the probe card substrate 110, and a probe card substrate 110. And a plurality of support columns 150 interposed between the support member 130 and the support member 130.
  • the probe card substrate 110 is used by being attached to a prober (not shown), and is made of, for example, glass epoxy.
  • the shape of the probe card substrate 110 in plan view (that is, the planar shape) is, for example, a regular circle.
  • the probe card substrate 110 has, for example, a diameter of 100 to 300 mm and a thickness of 3.2 to 4.8 mm.
  • a circuit or an electronic component (not shown) is attached on the upper surface 111 of the probe card substrate 110.
  • a plurality of probe needles 120 connected to the above-described circuits and electronic components are attached to the probe card substrate 110.
  • the probe needle 120 is fixed by, for example, a needle presser 123 arranged on the lower surface 112 side of the probe card substrate 110, and the tip 121 thereof is located on the lower surface 112 side of the probe card substrate 110.
  • the number and arrangement interval of the probe needles 120 correspond to, for example, the number and arrangement interval of electrode pads of a product to be inspected (that is, an IC chip formed on a wafer).
  • the probe card substrate 110 is provided with a plurality of screw holes 113 penetrating between the upper surface 111 and the lower surface 112 in order to fix the lower ends of the plurality of columns 150.
  • the support member 130 supports the probe card substrate 110 and is made of, for example, a stainless steel material.
  • the support member 130 is used in a state of being fixed to a prober (not shown), for example.
  • the planar shape of the support member 130 is, for example, a cross shape.
  • the size of the support member 130 is, for example, a length from one end to the other end of the cross of 100 to 300 mm and a thickness of 5 to 20 mm.
  • the support member 130 is provided with a plurality of screw holes 133 penetrating between the upper surface 131 and the lower surface 132 of the support member 130 in order to fix the upper ends of the plurality of support columns 150.
  • the plurality of struts 150 connect the probe card substrate 110 and the support member 130, and their length L is, for example, 10 to 20 mm. This length L corresponds to the distance between the probe card substrate 110 and the support member 130.
  • the plurality of support columns 150 include, for example, a plurality of first support columns 151 and a plurality of second support columns 152.
  • the plurality of first support columns 151 are arranged at equal intervals on the first circumference 171.
  • the first circumference 171 is a perfect circle, for example, and is a virtual circumference having the center of the circle at the center of the probe card substrate 110.
  • the plurality of second support columns 152 are arranged at equal intervals on the second circumference 172.
  • the second circumference 172 is, for example, a circumference of a perfect circle, is concentric with the first circumference 171 (that is, shares the center of the circle), and has a diameter larger than that of the first circumference 171. Is a large virtual circumference.
  • four first support columns 151 are arranged at equal intervals on the first circumference 171
  • four second support columns 152 are arranged at equal intervals on the first circumference 171.
  • the case where the first support column 151 and the second support column 152 form a line in the radial direction of the circle for example, the X-axis direction and the Y-axis direction
  • first support column 151 and the second support column 152 are provided with, for example, screw holes penetrating from the lower end to the upper end.
  • first support column 151 is fixed with a screw 161 from the probe card substrate 110 side and is fixed with a screw 166 from the support member 130 side.
  • a space is secured between the screw 161 and the screw 166 at an intermediate portion in the length direction (for example, the Z-axis direction) of the first support column 151.
  • the second support column 152 is fixed with screws 162 from the probe card substrate 110 side and fixed with screws 167 from the support member 130 side.
  • a space is secured between the screw 162 and the screw 167 at an intermediate portion in the length direction of the second support column 152.
  • the thermal expansion coefficient (thermal expansion coefficient) of the second support column 152 is larger than the thermal expansion coefficient of the first support column 151. That is, when the coefficient of thermal expansion of the first support column 151 is ⁇ 1 and the coefficient of thermal expansion of the second support column 152 is ⁇ 2, the first support column 151 and the second support column 151 are set so that the following equation (1) is satisfied.
  • a material is selected for each of the columns 152. ⁇ 2> ⁇ 1 (1)
  • the second support column 152 is SUS430 or JIS standard. It may be SUS410.
  • each material of the first support column 151 and the second support column 152 may be arbitrarily selected on condition that the expression (1) is satisfied.
  • the screws 161 and 166 for fixing the first support column 51 are preferably made of the same material as that of the first support column 151.
  • the first support column 151 and the screws 161 and 166 coincide with each other, the first support column 151 and the screws 161 and 166 can be regarded as one body, and the first support column 151 of the heating test can be regarded as an integrated object. It becomes easy to control the volume change amount of the expansion / contraction (change amount of the length L).
  • the screws 162 and 167 for fixing the second support column 152 are preferably made of the same material as that of the second support column 152.
  • FIG. 10 is a conceptual diagram showing the forces F1 and F2 applied to the probe card substrate 110 during the high temperature inspection.
  • the stage is heated by energizing a heater built in the stage with the wafer fixed on the stage.
  • the temperature of the wafer rises through the stage to, for example, 150 ° C. to 200 ° C.
  • the probe needle 120 is brought into contact with the electrode pad of the IC chip formed on the wafer to The mechanical characteristics.
  • the radiant heat and conduction heat are also transmitted through the probe card substrate 110 to the plurality of columns 150 arranged on the upper surface 111 side of the probe card substrate 110. Then, due to heat transfer from the probe card substrate 110, the temperature of each of the plurality of support columns 150 rises.
  • the thermal expansion coefficient ⁇ 2 of the second support column 152 is larger than the thermal expansion coefficient ⁇ 1 of the first support column 151.
  • pillar 152 expand
  • a force F ⁇ b> 2 is applied to the probe card substrate 110 in a direction that causes “upward warping deformation”.
  • the force F2 that tries to cause “warping deformation that protrudes upward” cancels out the force F1 that causes “warping deformation that protrudes downward”.
  • the force F1 can be reduced, it is possible to reduce “warping deformation that protrudes downward” due to the temperature difference between the upper and lower surfaces of the probe card substrate 110.
  • a part or all of a plurality of IC chips formed on the wafer are inspected while the probe card 200 is moved relative to the wafer.
  • an IC chip located on the outer periphery of the wafer may be inspected, or the probe card 200 may be moved to a cleaning area outside the stage. In this case, at least a part of the probe card 200 leaves from above the stage.
  • the probe card 200 is separated from the upper side of the stage, the amount of radiant heat received by the lower surface 112 of the probe card substrate 110 is reduced, so that the temperature difference between the upper and lower surfaces is reduced.
  • the force F ⁇ b> 1 that causes the “downward convex warping deformation” is reduced, and the warp deformation of the probe card substrate 110 tends to converge. Further, since the amount of heat transferred from the probe card substrate 110 to each column 150 is also small, each column 150 contracts according to the coefficient of thermal expansion. As a result, the force F ⁇ b> 2 that causes “warping deformation that protrudes upward” is also reduced.
  • the lower surface 112 of the probe card substrate 110 corresponds to “one surface” of the present invention
  • the upper surface 111 corresponds to “the other surface” of the present invention.
  • the probe card of the present invention has the following effects.
  • the probe card 200 is located between the probe card substrate 110 and the support member 130, and the position (for example, outer periphery) farther from the center of the probe card substrate 110 than the first column 151.
  • a second support column 152 disposed in the section).
  • the thermal expansion coefficient ⁇ 2 of the second support column 152 is larger than the thermal expansion coefficient ⁇ 1 of the first support column 151.
  • first support columns 151 and a plurality of second support columns 152 are prepared, and the first support columns 151 are arranged on the first circumference 171 at equal intervals, and the second support columns 151 152 are arranged at equal intervals on the second circumference 172.
  • the pressing force set in this way is a force F2 that causes the probe card board 110 to generate a “warp deformation that protrudes upward”, and this force F2 causes “a warp deformation that protrudes downward”. It works in the opposite direction to the force F1 to be generated. For this reason, the warp deformation caused by the temperature difference between the upper and lower surfaces of the probe card substrate 110 can be more effectively reduced.
  • the amount of displacement of the tip position of the probe needle 120 can be reduced. Thereby, the pressing force of the probe needle 120 against the electrode pad can be made uniform. Further, since the amount of displacement of the tip position of the probe needle 120 can be reduced and the pressing pressure can be made uniform, the temperature of the high temperature inspection can be further increased (for example, a temperature exceeding 200 ° C.).
  • the plurality of support columns 150 includes, for example, a plurality of first support columns 151 and a plurality of second support columns 152 has been described.
  • the plurality of struts 150 are not limited to the two types of the first struts 151 and the second struts 152.
  • the plurality of support columns 150 may include a third support column 153 in addition to the first support column 151 and the second support column 152.
  • the third support column 153 is disposed on the center portion of the probe card substrate 110.
  • the center portion of the probe card substrate 110 is a so-called dead space in which it is difficult to place electronic components, but the third support column 153 is placed here.
  • the thermal expansion coefficient of the third support column 153 is smaller than the thermal expansion coefficient of the first support column 151. That is, when the coefficient of thermal expansion of the third support column 153 is ⁇ 3, the material of the third support column 153 is selected so that the following expression (3) is satisfied. ⁇ 2> ⁇ 1> ⁇ 3 (3)
  • the third support 153 is a super invar whose thermal expansion coefficient is much smaller than these. An alloy can be selected.
  • the number of support columns 150 can be increased without sacrificing the arrangement space for the electronic components in the probe card substrate 110.
  • the third support column 153 functions as a heat transfer path, thereby efficiently radiating heat from the central portion of the probe card substrate 110 to the support member 130 side. It becomes possible to do.
  • a screw 163 that instructs the third support column 153 from the support member 130 side and a screw that fixes the third support column 153 from the probe card substrate 110 side. is preferably made of the same material as the third support column 153.
  • the first support column 151 shown in FIG. 11 may be omitted. That is, as shown in FIGS. 12A and 12B, the third support column 153 is disposed at the center portion of the probe card substrate 110, the second support column 152 is disposed at the outer peripheral portion, and the central portion and the outer peripheral portion.
  • the strut 150 may not be disposed in the middle portion between the two. With such a configuration, for example, it is easy to secure a space on the upper surface 111 side of the intermediate portion of the probe card substrate 110.
  • Various electronic components 155 such as a coil, a capacitor, or a packaged IC element can be arranged in the reserved space. Thereby, the mounting density of the electronic components on the probe card substrate 110 can be increased.
  • the third support column 153 corresponds to the “first support column” of the present invention.
  • the thermal expansion coefficient ⁇ 2 of the second support column 152 may be larger than the thermal expansion coefficient ⁇ b of the probe card substrate 110.
  • ⁇ 2> ⁇ b> ⁇ 1 (2) ′ For example, by configuring the second support column 152 with a resin material, or configuring the second support column 152 and the screws 162 and 167 with the same resin material, the expression (2) ′ can be satisfied.
  • FIG. 13 is a plan view showing a configuration example of a probe card 300 according to the third embodiment of the present invention. As shown in FIG.
  • the probe card 300 includes a probe card substrate 110, a support plate 230 that is spaced apart from the upper surface 111 of the probe card substrate 110, and a space between the probe card substrate 110 and the support member 130. And a plurality of support columns 150 interposed therebetween.
  • the support plate 230 supports the probe card 300 and is made of, for example, a stainless steel material.
  • the support plate 230 is used in a state of being fixed to a prober (not shown), for example.
  • the support plate 230 has a planar shape of, for example, a regular circle. Similar to the support member 130 shown in FIG. 9, the support plate 230 is also provided with a plurality of screw holes penetrating between the upper surface 111 and the lower surface 112 of the support plate 230 in order to fix the upper end of the support column 150. .
  • the first support column 151 and the second support column 152 have the same functions as those of the second embodiment.
  • the third embodiment has the same effects as the effects (1) to (3) of the second embodiment. Also in the third embodiment, the modifications (1) to (3) described in the second embodiment may be applied.
  • the plurality of support columns 150 may include a third support column 153 in addition to the first support column 151 and the second support column 152.
  • the third support column 153 is disposed on the center portion of the probe card substrate 110, for example.
  • pillar 153 is each selected so that said (3) Formula may be formed. With such a configuration, the same effect as that of the modified example (1) of the second embodiment is obtained.
  • the first support column 151 may be omitted. That is, as shown in FIG. 15, the third support column 153 is disposed at the center portion of the probe card substrate 110, the second support column 152 is disposed at the outer peripheral portion, and the intermediate portion between the central portion and the outer peripheral portion is disposed. The first support column 150 may not be disposed. With such a configuration, the same effect as the modification (2) of the second embodiment is obtained.
  • the number of the second support columns 152 may be larger than that of the first support columns 151.
  • the arrangement interval of the second support columns 152 on the second circumference 172 can be made closer to the arrangement interval of the first support columns 151 on the first circumference 171.
  • the distribution of the pressing force by the second column 152 can be made more uniform.
  • the support plate 230 corresponds to the “support member” of the present invention.
  • FIG. 17 is a plan view showing a configuration example of a support plate 330 according to the fourth embodiment of the present invention.
  • the planar shape of the support plate 330 is, for example, a perfect circle, and a number of threaded holes 133 penetrating from the upper surface 111 to the lower surface 112 are formed.
  • a number of screw holes 133 are formed in the support plate 330.
  • a plurality of screw holes 133 are arranged at equal intervals on each circumference of a plurality of concentric circles with the center of the support plate 330 as the center of the circle.
  • a screw hole 133 may be formed at the center of this circle.
  • the circumference here is a virtual circumference like 2nd and 3rd embodiment.
  • an arbitrary screw hole 133 can be selected from the plurality of screw holes 133, and the column 150 can be fixed through the screw through the selected screw hole 133. Since the screw hole 133 of the support plate 330 can be selected according to the position of the screw hole 133 of the probe card substrate 110 and the support 150 can be fixed thereto, the versatility of the support plate 330 can be improved.
  • the present invention is not limited to the embodiments described above. Based on the knowledge of those skilled in the art, design changes and the like can be added to each embodiment, and such a modified embodiment is also included in the scope of the present invention.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

La présente invention concerne un dispositif de fixation de carte de sonde, un dispositif et un procédé d'inspection de sonde et une carte de sonde, dans lesquels il est possible de minimiser les fluctuations de position de l'extrémité distale de l'aiguille de sonde, dues à l'expansion thermique de la carte de sonde et du support de carte. Un dispositif de fixation de carte de sonde, destiné à fixer une carte (10) de sonde sur un sondeur, comprend : une bague (30) de raccordement, destinée à une fixation sur le boîtier de sondeur ; un support (20) de carte, destiné à maintenir la partie périphérique externe de la carte (10) de sonde entre la bague (30) de raccordement et le support (20) de carte ; et un PCLS (50), destiné à fixer la partie centrale de la carte (10) de sonde et la bague (30) de raccordement.
PCT/JP2013/003865 2012-06-22 2013-06-20 Dispositif de fixation de carte de sonde, dispositif et procédé d'inspection de sonde et carte de sonde WO2013190844A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020147008159A KR101569303B1 (ko) 2012-06-22 2013-06-20 프로브 카드 고정 장치, 프로브 검사 장치 및 프로브 카드
JP2014520958A JP5816749B2 (ja) 2012-06-22 2013-06-20 プローブカード固定装置、プローブ検査装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012140685 2012-06-22
JP2012-140685 2012-06-22
JP2012224932 2012-10-10
JP2012-224932 2012-10-10

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WO2013190844A1 true WO2013190844A1 (fr) 2013-12-27

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JP (1) JP5816749B2 (fr)
KR (1) KR101569303B1 (fr)
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CN108603915A (zh) * 2016-02-29 2018-09-28 泰拉丁公司 探针卡组件的热控制

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CN106338625B (zh) * 2015-07-06 2019-07-26 创意电子股份有限公司 探针卡
TWI597503B (zh) * 2016-08-24 2017-09-01 美亞國際電子有限公司 探針卡
KR20210032472A (ko) * 2018-07-18 2021-03-24 니혼덴산리드가부시키가이샤 프로브, 검사 지그, 검사 장치, 및 프로브의 제조 방법
TWI747553B (zh) * 2020-10-15 2021-11-21 華邦電子股份有限公司 晶圓檢測裝置

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JP2006108456A (ja) * 2004-10-07 2006-04-20 Japan Electronic Materials Corp プローブ装置
JP2008082912A (ja) * 2006-09-28 2008-04-10 Micronics Japan Co Ltd 電気的接続装置

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JP2007294489A (ja) * 2006-04-20 2007-11-08 Mitsumi Electric Co Ltd 半導体装置の検査方法
JP2009133722A (ja) * 2007-11-30 2009-06-18 Tokyo Electron Ltd プローブ装置
TWI414793B (zh) * 2009-09-15 2013-11-11 Mpi Corp High frequency probe card

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JP2004205487A (ja) * 2002-11-01 2004-07-22 Tokyo Electron Ltd プローブカードの固定機構
JP2006108456A (ja) * 2004-10-07 2006-04-20 Japan Electronic Materials Corp プローブ装置
JP2008082912A (ja) * 2006-09-28 2008-04-10 Micronics Japan Co Ltd 電気的接続装置

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Publication number Priority date Publication date Assignee Title
CN108603915A (zh) * 2016-02-29 2018-09-28 泰拉丁公司 探针卡组件的热控制

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KR20140054380A (ko) 2014-05-08
JP5816749B2 (ja) 2015-11-18
TW201405131A (zh) 2014-02-01
TWI513984B (zh) 2015-12-21
KR101569303B1 (ko) 2015-11-13
JPWO2013190844A1 (ja) 2016-02-08

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