WO2013170523A1 - 具有续流二极管的开关装置 - Google Patents

具有续流二极管的开关装置 Download PDF

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Publication number
WO2013170523A1
WO2013170523A1 PCT/CN2012/077970 CN2012077970W WO2013170523A1 WO 2013170523 A1 WO2013170523 A1 WO 2013170523A1 CN 2012077970 W CN2012077970 W CN 2012077970W WO 2013170523 A1 WO2013170523 A1 WO 2013170523A1
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Prior art keywords
freewheeling diode
heat
heat dissipation
heat sink
switching device
Prior art date
Application number
PCT/CN2012/077970
Other languages
English (en)
French (fr)
Inventor
蔡颖杰
Original Assignee
上海拜骋电器有限公司
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Filing date
Publication date
Application filed by 上海拜骋电器有限公司 filed Critical 上海拜骋电器有限公司
Priority to US13/995,019 priority Critical patent/US20150076605A1/en
Priority to DE112012000369.1T priority patent/DE112012000369T5/de
Publication of WO2013170523A1 publication Critical patent/WO2013170523A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4018—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by the type of device to be heated or cooled
    • H01L2023/4031—Packaged discrete devices, e.g. to-3 housings, diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
    • H01L2023/405—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink heatsink to package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4075—Mechanical elements
    • H01L2023/4081—Compliant clamping elements not primarily serving heat-conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4075—Mechanical elements
    • H01L2023/4087—Mounting accessories, interposers, clamping or screwing parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Definitions

  • BACKGROUND OF THE INVENTION 1.
  • the invention relates to the field of semiconductors, and in particular to a switching device having a freewheeling diode.
  • a freewheeling diode is provided in a DC-regulating semiconductor switching device for providing a discharge path for an inductive load such as a motor at the moment when the switching device is turned off.
  • 1 is a circuit diagram of a semiconductor switching device with a freewheeling diode. As shown in FIG. 1, the negative electrode of the freewheeling diode 12 should be connected to the positive input of the power source 11, and the positive electrode of the freewheeling diode 12 is connected to the switching device 13, that is, continued.
  • the flow diode 12 is connected in parallel across the inductive load 14, and when the switching device 13 is turned off, a bleeder circuit is provided for the current of the inductive load 14. Since the switching device and the freewheeling diode 12 work normally, the heating will continue to be generated. The overheating condition will affect the working performance of the device, reduce the working life of the device, and even cause the failure of the device to burn out in severe cases. Therefore, the heat dissipation of the freewheeling diode 12 is directly Affects the normal operation of the circuit. Considering the heat dissipation performance and capacity of the switching device, a switching tube of a TO (Transistor Outline) package is generally used.
  • FIG. 2 is a schematic diagram of a conventional switching tube for a switching device.
  • the heat sink substrate 131 is connected to the pole 134, and the gate electrode 133 and the source electrode 135 are respectively located at two sides of the drain electrode 134.
  • the semiconductor silicon wafer 132 is located on one side of the heat dissipation substrate 131 and forms a stepped shape with the heat dissipation substrate 131.
  • the switch tube 13 dissipates heat by enlarging the area of the heat dissipation substrate. However, the use of the above-mentioned switch tube 13 only considers the heat dissipation performance of the switching device 13.
  • the freewheeling diode 12 is connected to the drain 134 of the switch tube 13 by soldering, which is far from the heat sink, and the cost of both the diode and the solder process is Higher, the diode acts as a heat source and the discrete heat device is far away, resulting in poor heat dissipation.
  • soldering or bumping process is used for the connection, the process is relatively complicated, the solder joint leakage is prone to occur, and the assembly and replacement operations are complicated.
  • an effective solution has not been proposed yet.
  • a primary object of the present invention is to provide a switching device having a freewheeling diode to solve the problem of poor heat dissipation of the freewheeling diode in the prior art.
  • a switching device having a freewheeling diode is provided.
  • the switch device with a freewheeling diode comprises a switch tube, the drain of the switch tube is provided with a heat dissipation substrate, and the switch device with the freewheeling diode further comprises: a heat dissipating component, which is in contact with the heat dissipation substrate of the switch tube;
  • the freewheeling diode is a crimping diode, and the positive end surface of the freewheeling diode abuts against the heat dissipating component, and is electrically connected to the drain of the switching tube through the heat dissipating component.
  • the switching device with the freewheeling diode provided by the present invention further comprises a power source positive input member disposed between the negative end surface of the freewheeling diode and the positive pole of the power source.
  • the switch device with a freewheeling diode provided by the present invention further comprises an elastic member disposed between the positive input member of the power source and the freewheeling diode, and pressurizes the freewheeling diode between the positive input member of the power source and the heat dissipating member.
  • the elastic member includes an elastic plate protruding toward the first side surface of the elastic member, the first side surface being opposite to the negative end surface of the freewheeling diode, the elastic plate abutting against the negative end surface of the freewheeling diode.
  • the elastic plate is located at an intermediate position of the elastic member.
  • the elastic component further includes two hooks bent toward the second side of the elastic component, the second side is opposite to the positive input member of the power supply, and the positive input member of the power supply has two fixing slots, and the hook is embedded in the fixing The groove is such that the elastic member is fixed to the positive input member of the power source.
  • the hooks are located on both sides of the elastic member. Further, one side of the elastic member is provided with a flange for clamping.
  • the heat dissipating component includes a first heat sink and a second heat sink, wherein the heat sink substrate is sandwiched between the first heat sink and the second heat sink, wherein the second heat sink is located on a side of the semiconductor wafer of the switch tube, and is disposed on the switch tube
  • the positive end surface of the freewheeling diode abuts against the second heat sink.
  • the first heat sink, the second heat sink, and the heat dissipation substrate are fixed together by screws.
  • a switching device having a freewheeling diode has a switching tube, the drain of the switching tube is provided with a heat dissipating substrate, and the switching device further includes: a heat dissipating component, in contact with the heat dissipating substrate of the switch tube;
  • the freewheeling diode is a crimping diode, and the positive end surface of the freewheeling diode abuts against the heat dissipating component, and is electrically connected to the drain of the switching tube through the heat dissipating component, and the heat dissipating function is realized by the heat dissipating component, and the heat dissipating component is utilized.
  • FIG. 1 is a circuit diagram of a semiconductor switching device with a freewheeling diode
  • FIG. 2 is a schematic diagram of a conventional switching transistor for a switching device
  • FIG. 3 is a switching device with a freewheeling diode according to Embodiment 1 of the present invention
  • 4 is a schematic diagram of a switching device having a freewheeling diode according to Embodiment 2 of the present invention
  • FIG. 1 is a circuit diagram of a semiconductor switching device with a freewheeling diode
  • FIG. 2 is a schematic diagram of a conventional switching transistor for a switching device
  • FIG. 3 is a switching device with a freewheeling diode according to Embodiment 1 of the present invention
  • 4 is a schematic diagram of a switching device having a freewheeling diode according to Embodiment 2 of the present invention
  • FIG. 1 is a circuit diagram of a semiconductor switching device with a freewheeling diode
  • FIG. 2 is a schematic diagram of a
  • FIG. 5 is a schematic view showing an elastic member of a switching device having a freewheeling diode according to Embodiment 2 of the present invention; It is a schematic diagram of a switching device having a freewheeling diode according to Embodiment 3 of the present invention.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS It should be noted that the embodiments in the present application and the features in the embodiments may be combined with each other without conflict. The invention will be described in detail below with reference to the drawings in conjunction with the embodiments. The circuit connection relationship of the switching device with the freewheeling diode of the embodiment of the present invention is consistent with the circuit diagram of FIG.
  • the switching tube of the TO package is used, such as a MOSFET (Metal Oxide Semiconductor Field Effect). Transistor ⁇ metal oxide semiconductor field effect transistor).
  • MOSFET Metal Oxide Semiconductor Field Effect
  • Transistor ⁇ metal oxide semiconductor field effect transistor Transistor ⁇ metal oxide semiconductor field effect transistor
  • the drain of the MOSFET is electrically connected to the heat sink substrate.
  • the freewheeling diode 12 of the embodiment of the present invention uses a crimping diode, and the positive end surface of the crimping diode directly abuts on the heat dissipating component 15.
  • the heat sink is made of a metal material, thereby using the heat dissipating component 15 The heat is radiated, and the electrical conductivity of the heat dissipating member 15 is electrically connected to the heat dissipating substrate 131.
  • the switching device of Embodiment 1 includes: a heat dissipating member 15 in contact with the heat dissipating substrate 131 of the switching tube; and a freewheeling diode
  • the positive electrode end surface of 12 is in contact with the heat radiating member 15, and is electrically connected to the drain of the switching tube 13 through the heat radiating member 15.
  • the end faces of the freewheeling diode 12 are in close contact with the heat dissipating member 15, and the heat dissipating member 15 can be effectively used for heat dissipation, and the electrical conductivity of the heat dissipating member 15 is electrically connected to the heat dissipating substrate 131.
  • the heat dissipation substrate 131 of the switch tube is generally provided with a through hole, the heat dissipation substrate 131 and the heat dissipation member 15 can be brought into contact by screwing. In addition to screw fixing, it can also be applied in various ways such as bonding, crimping, and welding.
  • the positive end surface of the freewheeling diode 12 abuts against the heat dissipating member 15, and the freewheeling diode can be adhered to the heat dissipating member 15 by using a thermally conductive conductive silica gel, or a certain pressure can be applied to the negative end of the freewheeling diode 12.
  • FIG. 4 is a schematic diagram of a switching device having a freewheeling diode according to Embodiment 2 of the present invention. As shown in FIG.
  • Embodiment 2 of the present invention has The switching device of the freewheeling diode further includes a power supply positive input component 17 disposed between the negative end face of the freewheeling diode 12 and the positive terminal of the power supply.
  • the positive input member 17 of the power supply realizes the electrical connection between the negative end surface of the freewheeling diode 12 and the power source, and can also clamp the freewheeling diode 12 to the heat dissipating component by setting the distance between the positive input member 17 and the heat dissipating member 15. 15 is between the power supply positive input member 17.
  • Embodiment 2 is a schematic view of an elastic member of a switch device having a freewheeling diode according to Embodiment 2 of the present invention, as shown in FIG.
  • the elastic member 16 includes an elastic plate 161 projecting toward the first side of the elastic member, the first side The elastic plate 161 abuts against the negative end surface of the freewheeling diode 12 with respect to the negative end surface of the freewheeling diode 12. After the mounting, the elastic plate 161 is deformed, and the freewheeling diode 12 is pressed against the heat radiating member 15 by the elastic force generated by the deformation.
  • the second side surface of the first side back surface is fixed to the power source positive input member 17, and the elastic member 16 can be made of a material having good conductivity to realize the electrical connection relationship of the negative electrode of the freewheeling diode 12.
  • the elastic plate 161 is preferably disposed at an intermediate position of the elastic member 16.
  • the elastic member 16 and the power source positive input member 17 are fixed in various manners, such as crimping, soldering, bonding, etc.
  • a fixing method in which the elastic member 16 is embedded in the power source positive input member 17 is preferably employed.
  • the elastic member 16 is provided with two hooks 162 bent toward the second side, the second side is opposite to the power positive input member 17, and the power positive input member 17 is provided with two fixing slots 171, and the hooks 162 are embedded in the fixing slots 171.
  • the elastic member 16 is fixed to the power source positive input member 17.
  • the two hooks 162 are preferably disposed on both sides of the elastic member 16.
  • the elastic member 16 is fixed to the positive electrode input member 17 by the above-mentioned fixing method, and the assembly method is simple and reliable, and no additional material is required, which saves cost.
  • one side of the elastic member 16 may be provided with a flange 163 for clamping.
  • the ledge 163 is located outside the freewheeling diode 12 and can be easily removed and installed.
  • the first heat sink 151 and the second heat sink 152 sandwich the heat sink substrate 131.
  • the second heat sink 152 is located on the side of the semiconductor wafer 132 of the switch tube 13 and is disposed on the step formed between the semiconductor wafer 132 and the heat dissipation substrate 131 of the switch tube, and the positive and second heat dissipation of the freewheeling diode 12 Component 152 abuts.
  • the rest of the connection relationship with Embodiment 2 is completely identical.
  • the heat dissipation of the switch tube is mainly realized by the first heat sink 151, and the second heat sink 152 is used. It is mainly used to dissipate the freewheeling diode 12, thereby further improving the heat dissipation effect of the freewheeling diode.
  • the first heat sink 151 and the second heat sink 152 form a heat dissipation loop, thereby having a larger heat dissipation area and a heat dissipation volume, and the heat dissipation effect is better.
  • the first heat sink 151, the second heat sink 152, and the heat dissipation substrate 131 are connected in various manners, and preferably may be fixed together by screws.
  • the freewheeling diode 12 of all of the above embodiments can use a button diode. The price of this type of diode is lower than that of an axially packaged diode with a pin.
  • a switching device having a freewheeling diode has a switching tube, the drain of the switching tube is provided with a heat dissipating substrate, and the switching device further includes: a heat dissipating component, in contact with the heat dissipating substrate of the switch tube;
  • the freewheeling diode is a crimping diode, and the positive end surface of the freewheeling diode abuts against the heat dissipating component, and is electrically connected to the drain of the switching tube through the heat dissipating component, and the heat dissipating function is realized by the heat dissipating component, and the heat dissipating component is utilized.
  • the electrical conductivity is electrically connected to the heat sink substrate.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Dc-Dc Converters (AREA)
  • Inverter Devices (AREA)

Abstract

一种具有续流二极管（12）的开关装置，该开关装置包括开关管（13），该开关管的漏极（134）设置有散热基板（131），该开关装置还包括：散热部件（15），与该开关管的散热基板接触连接；该续流二极管为压接型二极管，该续流二极管的正极端面与散热部件抵接，并通过散热部件与开关管的漏极电连接。该开关装置既利用散热部件实现了散热功能，而且利用散热部件的导电性与散热基板实现了电连接。

Description

具有续流二极管的开关装置 技术领域 本发明涉及半导体领域， 特别地， 涉及一种具有续流二极管的开关装置。 背景技术 目前， 在直流调速半导体开关装置中都设置有续流二极管， 用于在开关器件关闭 的瞬间， 为感性负载如电机等提供放电通道。 图 1是带有续流二极管的半导体开关装 置的电路图， 如图 1所示， 续流二极管 12的负极应和电源 11的正极输入连接， 续流 二极管 12正极和开关器件 13连接，也就是续流二极管 12并联在感性负载 14的两端， 当开关器件 13关断时， 为感性负载 14的电流提供泄放回路。 由于开关器件和续流二 极管 12正常工作时， 会持续发热， 出现过热情况会影响器件的工作性能， 减少器件的 工作寿命，严重时甚至会出现烧毁器件的故障， 因此续流二极管 12的散热直接影响了 电路的正常工作。 考虑到开关器件的散热性能以及容量， 目前一般使用 TO (Transistor Outline, 晶 体管外形） 封装的开关管， 图 2是现有用于开关装置的开关管示意图， 如图所示， 该 开关管 13的漏极 134连接有散热基板 131， 栅极 133和源极 135分别位于漏极 134的 两侧， 半导体硅片 132位于散热基板 131的一侧， 与散热基板 131形成台阶形状。 该 开关管 13利用扩大散热基板的面积进行散热。 但是使用上述开关管 13仅仅考虑了开关器件的 13散热性能，续流二极管 12使用 焊接方式与开关管 13的漏极 134连接， 离散热装置较远， 另外引脚是二极管和焊锡工 艺的成本都较高， 二极管作为发热源之一离散热装置较远造成散热效果差。 另外采用 焊锡或者碰焊工艺进行连接， 工艺相对复杂， 容易出现虚焊漏焊， 并且进行组装和拆 换的操作复杂。 针对现有技术中存在的续流二极管散热效果差的问题， 目前尚未提出有效的解决 方案。 发明内容 本发明的主要目的是提供一种具有续流二极管的开关装置， 以解决现有技术中续 流二极管散热效果差的问题。 为了实现上述目的， 根据本发明的一个方面， 提供了一种具有续流二极管的开关 装置。 本发明提供的具有续流二极管的开关装置包括开关管， 该开关管的漏极设置有散 热基板， 上述具有续流二极管的开关装置还包括： 散热部件， 与开关管的散热基板接 触连接； 该续流二极管为压接型二极管， 续流二极管的正极端面与散热部件抵接， 并 通过散热部件与开关管的漏极电连接。 进一步地， 本发明提供的具有续流二极管的开关装置还包括电源正极输入部件， 设置在续流二极管的负极端面和电源的正极之间。 进一步地， 本发明提供的具有续流二极管的开关装置还包括弹性部件， 设置在电 源正极输入部件和续流二极管之间， 利用弹性将续流二极管压靠在电源正极输入部件 与散热部件之间。 进一步地， 弹性部件包括朝向该弹性部件第一侧面凸起的弹性板， 该第一侧面与 续流二极管的负极端面相对， 该弹性板与续流二极管的负极端面抵接。 进一步地， 弹性板位于弹性部件的中间位置。 进一步地， 弹性部件还包括两个朝向该弹性部件第二侧面弯折的卡钩， 该第二侧 面与电源正极输入部件相对， 电源正极输入部件上开有两个固定槽， 卡钩嵌入上述固 定槽， 使弹性部件固定在电源正极输入部件上。 进一步地， 上述卡钩位于弹性部件的两侧。 进一步地， 弹性部件的一侧设置有用于夹持的凸沿。 进一步地， 散热部件包括第一散热片和第二散热片上述散热基板夹在第一散热片 和第二散热片中间， 其中第二散热片位于开关管的半导体硅片一侧， 设置在开关管的 半导体硅片与散热基板之间形成的台阶上，续流二极管的正极端面与第二散热片抵接。 进一步地， 第一散热片、 第二散热片、 以及散热基板通过螺钉固定在一起。 根据本发明的技术方案， 具有续流二极管的开关装置， 具有开关管， 该开关管的 漏极设置有散热基板， 该开关装置还包括： 散热部件， 与所述开关管的散热基板接触 连接； 续流二极管为压接型二极管， 该续流二极管的正极端面与散热部件抵接， 并通 过散热部件与开关管的漏极电连接， 既利用散热部件实现了散热功能， 而且利用散热 部件的导电性与散热基板实现了电连接。 附图说明 说明书附图用来提供对本发明的进一步理解， 构成本申请的一部分， 本发明的示 意性实施例及其说明用于解释本发明， 并不构成对本发明的不当限定。 在附图中： 图 1是带有续流二极管的半导体开关装置的电路图； 图 2是现有用于开关装置的开关管示意图； 图 3是根据本发明实施例 1的具有续流二极管的开关装置的示意图； 图 4是根据本发明实施例 2的具有续流二极管的开关装置的示意图； 图 5是是根据本发明实施例 2的具有续流二极管的开关装置的弹性部件的示意图； 以及 图 6是是根据本发明实施例 3的具有续流二极管的开关装置的示意图。 具体实施方式 需要说明的是， 在不冲突的情况下， 本申请中的实施例及实施例中的特征可以相 互组合。 下面将参考附图并结合实施例来详细说明本发明。 本发明实施例的具有续流二极管的开关装置所使用电路连接关系与图 1的电路图 一致， 没有对电路连接进行改进， 而且使用的也是 TO封装的的开关管， 如 MOSFET (Metal Oxide Semiconductor Field Effect Transistor^ 金属氧化物半导体场效应管）。 该 种 MOSFET的漏极与散热基板电气连接。 本发明实施例的续流二极管 12使用的是压 接式二极管， 该压接式二极管的正极端面直接抵接在散热部件 15上， 一般散热片为金 属材料， 由此既利用散热部件 15进行散热， 又利用散热部件 15的导电性与散热基板 131实现了电连接。 图 3是根据本发明实施例 1的具有续流二极管的开关装置的示意图， 如图所示， 实施例 1的开关装置包括： 散热部件 15， 与开关管的散热基板 131接触连接； 续流二 极管 12的正极端面与散热部件 15抵接， 并通过散热部件 15与开关管 13的漏极电连 接。 通过这种连接方式， 续流二极管 12—个端面紧贴散热部件 15， 可以有效地利用 散热部件 15进行散热，而且利用散热部件 15的导电性与散热基板 131实现了电连接。 开关管的散热基板 131—般开有通孔， 所以可以使用螺钉固定的方式将散热基板 131和散热部件 15接触在一起。 除了螺钉固定外， 也可以适用粘接、 压接、 焊接等多 种方式。 此处续流二极管 12的正极端面与散热部件 15抵接方式有多种， 可以使用导热导 电硅胶将续流二极管粘在散热部件 15上， 也可以在续流二极管 12的负极端施加一定 压力， 将续流二极管 12的正极端面压紧在散热部件 15上， 或者使用类似电子焊接中 的贴片工艺将续流二极管 12的正极端面贴装在散热部件 15上， 考虑到续流二极管 12 的电气连接关系，可以考虑使用电源的输入部件 17将续流二极管 12压向散热部件 15。 基于上述考虑， 本发明实施例 2对实施例 1进行了改进， 图 4是根据本发明实施 例 2的具有续流二极管的开关装置的示意图， 如图 4所示， 本发明实施例 2的具有续 流二极管的开关装置还包括电源正极输入部件 17， 设置在续流二极管 12的负极端面 和电源的正极之间。 该电源正极输入部件 17既实现了续流二极管 12的负极端面与电 源的电连接关系， 也可以通过设定电源正极输入部件 17与散热部件 15的间距， 将续 流二极管 12夹紧在散热部件 15和电源正极输入部件 17之间。 通过压接的方式， 可以避免使用锡焊或者碰焊的方式固定续流二极管 12， 避免了 复杂工艺造成的不可靠、 安装复杂。 但是直接使用两个刚性部件进行夹紧， 存在着间距配合问题， 而且随着环境的变 化，产生形变有可能出现夹紧不可靠的问题， 为此， 实施例 2还可以设置弹性部件 16， 该弹性部件 16设置在电源正极输入部件 17和续流二极管 12之间，利用弹性将续流二 极管 12压靠在电源正极输入部件 17与散热部件 15之间。通过弹性和刚性相结合的方 式固定二极管， 提高了压接的可靠性。 图 5是根据本发明实施例 2的具有续流二极管的开关装置的弹性部件的示意图， 如图 5所示， 弹性部件 16包括朝向该弹性部件第一侧面凸起的弹性板 161， 第一侧面 与续流二极管 12的负极端面相对， 弹性板 161与续流二极管 12的负极端面抵接。 安 装后， 弹性板 161产生形变， 利用形变产生的弹力将续流二极管 12压向散热部件 15。 第一侧面背面的第二侧面固定在电源正极输入部件 17， 该弹性部件 16可以使用导电 性良好的材料制作， 从而实现续流二极管 12的负极的电连接关系。 为保证弹力的均匀和组装加工的方便性，弹性板 161优选设置于弹性部件 16的中 间位置。 弹性部件 16与电源正极输入部件 17的固定方式有多种， 比如压接、 焊接、 粘接 等， 本发明实施例 2优选采用了一种将弹性部件 16嵌入电源正极输入部件 17的固定 方式。 弹性部件 16设置有两个朝向第二侧面弯折的卡钩 162， 第二侧面与电源正极输 入部件 17相对， 电源正极输入部件 17上开有两个固定槽 171， 卡钩 162嵌入固定槽 171， 使弹性部件 16固定在电源正极输入部件 17上。其中， 两个卡钩 162优选设置于 弹性部件 16的两侧。 利用上述的固定方式将弹性部件 16固定于电源正极输入部件 17上， 组装方式简 单可靠性高， 而且不需要额外的材料， 节省了成本。 弹性部件 16压接在续流二极管 12和电源正极输入部件 17之间后，如果进行拆除 缺少必要凸出部进行夹持，所以弹性部件 16的一侧还可以设置有用于夹持的凸沿 163， 安装后， 该凸沿 163位于续流二极管 12外， 可以方便的拆除和安装。 另外， 凸沿 163 限制了续流二极管 12沿弹性板 161的延伸位置的移动， 使续流二极管 12可靠地固定 在弹性部件 16和散热部件 15之间。 实施例 2中续流二极管 12与开关管 13使用同一散热部件 15， 为了实现更好的散 热性能， 本发明实施例 3对实施例 2进行了进一步改进， 图 6是是根据本发明实施例 3的具有续流二极管的开关装置的示意图， 如图 6所示， 散热部件 15包括第一散热片 151和第二散热片 152， 第一散热片 151和第二散热片 152将散热基板 131夹在中间， 其中第二散热片 152位于开关管 13的半导体硅片 132—侧，设置在开关管的半导体硅 片 132与散热基板 131之间形成的台阶上， 续流二极管 12的正极与第二散热部件 152 抵接。 其余部分与实施例 2的连接关系完全一致。 由于开关管的热量主要由半导体硅片 132发出， 而第一散热片 151与半导体硅片 132的接触面积更大， 所以开关管的散热主要由第一散热片 151实现， 而第二散热片 152主要用于对续流二极管 12进行散热， 从而进一步提高了续流二极管的散热效果。 另外第一散热片 151和第二散热片 152形成了一个散热回路， 从而具有更大的散热面 积和散热体积， 散热效果更好。 第一散热片 151、第二散热片 152、 以及散热基板 131的连接方式有多种， 优选可 以采用通过螺钉固定在一起。 以上所有实施例中的续流二极管 12均可以使用纽扣式二极管。该种二极管的价格 相比于带管脚的轴向封装二级管价格更为低廉。 根据本发明的技术方案， 具有续流二极管的开关装置， 具有开关管， 该开关管的 漏极设置有散热基板， 该开关装置还包括： 散热部件， 与所述开关管的散热基板接触 连接； 续流二极管为压接型二极管， 该续流二极管的正极端面与散热部件抵接， 并通 过散热部件与开关管的漏极电连接， 既利用散热部件实现了散热功能， 而且利用散热 部件的导电性与散热基板实现了电连接。 以上所述仅为本发明的优选实施例而已， 并不用于限制本发明， 对于本领域的技 术人员来说， 本发明可以有各种更改和变化。 凡在本发明的精神和原则之内， 所作的 任何修改、 等同替换、 改进等， 均应包含在本发明的保护范围之内。

Claims

权 利 要 求 书
1. 一种具有续流二极管的开关装置，所述开关装置包括开关管（ 13 ),该开关管（ 13 ) 的漏极 （134) 设置有散热基板 （131 )， 其特征在于， 所述开关装置还包括： 散热部件 （15 )， 与所述开关管的散热基板 （131 ) 接触连接； 所述续流二极管为压接型二极管， 所述续流二极管 （12) 的正极端面与所 述散热部件 （15 ) 抵接， 并通过所述散热部件 （15 ) 与所述开关管 （13 ) 的漏 极 （134) 电连接。
2. 根据权利要求 1所述的开关装置，其特征在于，还包括电源正极输入部件（17)， 设置在所述续流二极管 （12) 的负极端面和电源的正极之间。
3. 根据权利要求 2所述的开关装置， 其特征在于， 还包括弹性部件（16)， 设置在 所述电源正极输入部件 （17) 和所述续流二极管 （12) 之间， 利用弹性将所述 续流二极管 （12) 压靠在所述电源正极输入部件 （17) 与所述散热部件 （15 ) 之间。
4. 根据权利要求 3所述的开关装置， 其特征在于， 所述弹性部件 （16) 包括朝向 该弹性部件第一侧面凸起的弹性板（ 161 ),所述第一侧面与所述续流二极管（ 12) 的负极端面相对，所述弹性板（161 )与所述续流二极管（12)的负极端面抵接。
5. 根据权利要求 4所述的开关装置， 其特征在于， 所述弹性板（161 )位于所述弹 性部件 （16) 的中间位置。
6. 根据权利要求 3所述的开关装置， 其特征在于， 所述弹性部件 （16) 包括两个 朝向该弹性部件第二侧面弯折的卡钩 （162)， 所述第二侧面与所述电源正极输 入部件 （17) 相对， 所述电源正极输入部件 （17) 上开有两个固定槽 （171 )， 所述卡钩（162)嵌入所述固定槽（171 )， 使所述弹性部件（16) 固定在所述电 源正极输入部件 （17) 上。
7. 根据权利要求 6所述的开关装置， 其特征在于， 所述卡钩（162)位于所述弹性 部件 （16) 的两侧。
8. 根据权利要求 3至 7中任一项所述的开关装置，其特征在于，所述弹性部件（ 16) 的一侧设置有用于夹持的凸沿 （163 )。
9. 根据权利要求 1至 7中任一项所述的开关装置，其特征在于，所述散热部件（15) 包括第一散热片 （151) 和第二散热片 （152)， 所述散热基板 （131) 夹在所述 第一散热片（151)和所述第二散热片（152)中间； 其中所述第二散热片（152) 位于所述开关管（13) 的半导体硅片 （132)—侧， 设置在所述开关管的半导体 硅片 （132)与所述散热基板（131)之间形成的台阶上， 所述续流二极管（12) 的正极端面与所述第二散热片 （152) 抵接。
10. 根据权利要求 9所述的开关装置， 其特征在于， 所述第一散热片 （151)、 所述 第二散热片 （152)、 以及所述散热基板 （131) 通过螺钉固定在一起。
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