WO2013139162A1 - 一种Sb-Te-Ti相变存储材料及Ti-Sb2Te3相变存储材料 - Google Patents

一种Sb-Te-Ti相变存储材料及Ti-Sb2Te3相变存储材料 Download PDF

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WO2013139162A1
WO2013139162A1 PCT/CN2012/087572 CN2012087572W WO2013139162A1 WO 2013139162 A1 WO2013139162 A1 WO 2013139162A1 CN 2012087572 W CN2012087572 W CN 2012087572W WO 2013139162 A1 WO2013139162 A1 WO 2013139162A1
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phase change
change memory
memory material
target
phase
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PCT/CN2012/087572
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English (en)
French (fr)
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吴良才
朱敏
宋志棠
饶峰
彭程
周夕淋
任堃
封松林
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中国科学院上海微系统与信息技术研究所
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Priority to US13/885,894 priority Critical patent/US20140192592A1/en
Publication of WO2013139162A1 publication Critical patent/WO2013139162A1/zh
Priority to US14/966,348 priority patent/US10276234B2/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

Definitions

  • the present invention relates to a phase change material and a method of producing the same, and more particularly to an Sb-Te-Ti phase change film material which can be used for a phase change memory.
  • PCRAM phase change memory
  • Sb-Te series phase change materials The crystallization process of Sb-Te series phase change materials is dominated by grain growth, so the phase transition rate is fast and the melting point is lower than GST (Ge 2 Sb 2 Te 5 ), so the power consumption is low.
  • Sb_Te series phase change materials also have disadvantages such as low crystallization temperature, poor thermal stability, and poor data retention.
  • the Sb 2 Te 3 phase change material has a very fast crystallization rate and a low melting point. However, Sb 2 Te 3 has a very low crystallization temperature and very poor thermal stability. Consumer electronics require non-volatile memory to hold data for at least 10 years at 85 ° C. Industrial electronics are more demanding. In the absence of doping, Sb 2 Te 3 phase change materials cannot be applied to phase change memories.
  • the invention incorporates Ti on the basis of the Sb 2 Te 3 phase change material, thereby greatly increasing the crystallization temperature and improving the data retention force to meet the actual needs.
  • the object of the present invention is to provide an Sb-Te-Ti phase change material for a phase change memory to improve the thermal stability and amorphous resistance of the phase change material, and to reduce the Reset current and the melting temperature of the material. .
  • the present invention also provides a Ti-doped Ti-Sb 2 Te 3 phase change memory material for a phase change memory to improve its thermal stability and increase the amorphous resistance. At the same time, the grain becomes smaller after the incorporation of Ti, and no phase separation occurs.
  • the Ti-Sb 2 Te 3 phase change memory material doped with Ti has a decreased melting point and thermal conductivity.
  • a Sb-Te-Ti phase change memory material for phase change memory is formed by doping Ti on the basis of Sb-Te phase change material. Its chemical formula is Sb x Te y Ti 1 (W - x - y , where 0 ⁇ x ⁇ 80, 0 ⁇ y ⁇ 100 - xo
  • the lower right corner of the element in the chemical formula of the present invention represents a molar ratio.
  • the doped Ti forms a chemical bond with Sb and Te.
  • the Sb-Te-Ti phase change memory material is a Sb-Te-Ti phase change film material.
  • the Sb-Te-Ti phase change film material has a thickness of 100-250 nm.
  • the The Sb-Te-Ti phase change memory material realizes the reversible transformation of the resistivity by using an electric pulse.
  • the Sb-Te-Ti phase change memory material uses a laser pulse to realize a reversible transition of the optical reflectivity.
  • the crystallization temperature of the -Te-Ti phase change memory material is greatly improved, the thermal stability is enhanced, and the data retention is enhanced.
  • the Sb-Te-Ti phase Amorphous resistive memory material decreases, the crystalline state resistance increases above the present invention for a phase change memory Sb-Te-Ti phase-change memory material, the Sb-Te phase change memory material is Sb 2 Te 3
  • the atomic percentage of Ti is between 2% and 20%.
  • the Ti atom replaces the position of the Sb atom, and there is no phase separation.
  • the Ti-Sb 2 Te 3 phase change memory material is used.
  • the electric pulse acts to achieve a reversible transformation of the resistivity.
  • the Ti-Sb 2 Te 3 phase change memory material uses a laser pulse to achieve a reversible transition of optical reflectivity.
  • the amorphous resistance of the Ti-Sb 2 Te 3 phase change memory material first increases and then decreases as the Ti content is increased.
  • the crystallization temperature of the Ti-Sb 2 Te 3 phase change memory material is greatly improved, and thermal stability and data retention are enhanced.
  • the Ti-Sb 2 Te 3 phase change memory material has a small crystal grain (compared to the crystal grains of Sb 2 Te 3 ) and has no phase separation.
  • the melting point and thermal conductivity of the Ti-Sb 2 Te 3 phase change memory material are lowered.
  • the preparation method of the Sb-Te-Ti phase change memory material of the present invention comprises the following steps: using a chemical formula of Sb x Te y Ti 1 ( Sb x Te y alloy target and Ti in the ratio of Sb and Te in W - xy )
  • the arsenic of the Sb-Te-Ti phase change storage material is obtained by the co-sputtering.
  • the Sb x Te y alloy target uses a radio frequency power source, and the Ti target uses a DC power source.
  • the RF power source has a power of 25 W
  • the DC power source has a power of 15 Wo.
  • the Sb x is co-sputtered.
  • the Ti target power source is turned on.
  • the co-sputtering time is 15 minutes to 50 minutes.
  • the obtained Sb-Te-Ti phase change memory material is a phase change film material, The thickness of the film is from 100 nm to 250 nm.
  • the sputtering apparatus used in the present invention is a conventional sputtering apparatus in the prior art.
  • the present invention also provides a phase transition based on Sb-Te-Ti phase change memory material. memory cell.
  • the Sb-Te-Ti phase-change memory material doped with Ti Ti- Sb 2 Te 3 in the phase-change material Preferably, the Ti-based mixed Ti- Sb 2 Te 3 phase-change memory cell of the phase change material, the mixed Ti, Sb 2 Te 3 phase-change memory material grains becomes smaller, so that the Ti- Sb 2 Te 3 adhesion promoting phase change memory material of the upper and lower electrodes.
  • the Ti-based doped with Ti-Sb 2 Te 3 phase-change material of phase change memory cells, incorporated with Ti content increases, the phase transition The reset voltage of the memory cell is increased.
  • the phase change memory cell based on the Ti-Sb 2 Te 3 phase change material doped with Ti has higher and lower resistance of the phase change memory cell as the Ti content is increased.
  • the phase change memory cell based on the Ti-Sb 2 Te 3 phase change material doped with Ti increases, and the high resistance of the phase change memory cell first increases and then decreases as the Ti content is increased. The ratio of the high resistance to the low resistance also increases first and then decreases, and a similar law occurs.
  • the phase-change memory cell of the Ti-Sb 2 Te 3 phase change material with Ti is higher than the low resistance ratio. Magnitude.
  • the phase change memory cell of the Ti-doped Ti-Sb 2 Te 3 phase change material has a very fast set operation speed.
  • the phase change memory cell of the Ti-doped Ti-Sb 2 Te 3 phase change material has a high number of repeated operations.
  • the beneficial results of the present invention are:
  • the invention incorporates Ti, Ti and Sb, Te into a bond on the basis of Sb-Te phase change memory material, and the crystallization temperature of the Sb-Te-Ti phase change memory material obtained after Ti doping is increased, and the data retention is improved. , thermal stability is enhanced.
  • the crystalline resistance increases and the Reset power consumption decreases.
  • the Ti-Sb 2 Te 3 phase change memory material of the present invention the Ti atom replaces the position of the Sb atom, and has no phase separation; the Ti-Sb 2 Te 3 phase change memory material has a uniform distribution and a small crystal grain; and the crystallization temperature thereof is large.
  • the increase in amplitude, thermal stability and data retention are enhanced. With the increase of Ti content, the amorphous resistance of Ti-Sb 2 Te 3 phase change memory material increases first and then decreases; its melting point and thermal conductivity decrease.
  • Figure 1 is a graph showing the sheet resistance versus temperature for a Sb 6 oTe 3 () Ti 1 () film of different heating rates in Example 1.
  • 2 is a graph showing the time at which the Sb 6 oTe 3 ( )Ti 1 () film of Example 1 is maintained at different temperatures.
  • 3 is a graph showing the crystallization activation energy and the 10-year retention temperature of the Sb 6Q Te 3Q Ti 1Q film in Example 1.
  • 4 is a voltage-resistance curve of a phase change device unit based on a Sb 6() Te 3( ) Ti 1 () film in Example 1.
  • Figure 5 is a graph showing the sheet resistance and temperature of a Ti_Sb 2 Te 3 film of Sb 2 Te 3 and three different Ti contents at a heating rate of 10 ° C/min in Example 6.
  • Figure 6 is Sb in Example 6. X-ray diffraction results of 2 Te 3 and 10% Ti-doped Ti_Sb 2 Te 3 film after annealing at 300 ° C for 5 minutes.
  • Figure 7 is the data retention of Ti-Sb 2 Te 3 doped with 10% Ti in Example 6.
  • Figure 8 is a graph showing the resistance and voltage curves of a phase change memory device unit based on Ti-Sb 2 Te 3 doped with 10% Ti in Example 6.
  • Example 1 Preparation of Sb 6Q Te 3Q Ti 1Q nanocomposite phase change material:
  • the nanocomposite phase change material in this example was obtained by co-sputtering a Sb 6Q Te 3Q alloy target with a Ti target.
  • the specific preparation conditions are as follows: Ar gas with a purity of 99.999% is simultaneously introduced into the co-sputtering process, the RF source is used for the Sb 6() Te 3() target, and the DC power source is used for the Ti target. For 25W, the DC power supply used is 15W.
  • FIG. 1 is a graph showing the relationship between the sheet resistance of Sb 6Q Te 3Q Ti 1Q and temperature at different heating rates. The rate of temperature increase used was from 10 ° C / min to 50 ° C / min.
  • the crystallization temperature of pure Sb 6 QTe 3Q at a heating rate of 10 ° C / min is about 130 ° C, and after the incorporation of Ti, the crystallization temperature is about 212 ° C, which is more than 80 degrees higher than the original.
  • Figure 2 is a time chart of the Sb 6Q Te 3Q Ti 1Q film held at different temperatures. Retention is an important characteristic of phase change materials and one of the important parameters to measure whether this phase change material can be directly applied.
  • the crystallization temperature of Sb 6Q Te 3Q Ti 10 is 212 ° C, so the test temperature points for holding force are 195 ° C, 200 ° C, 205 ° C, 210 ° C, respectively, see FIG. This is because the test temperature of the holding force must be below the crystallization temperature.
  • the holding force is used to characterize the thermal stability of the amorphous state.
  • the test temperature is higher than the crystallization temperature, the phase change material has crystallized during the temperature rise.
  • the hold time of this amorphous state cannot be tested.
  • the dead time is defined as the time corresponding to when the sheet resistance drops to half of the initial resistance corresponding to the point at which the test temperature has just risen.
  • the failure times corresponding to 195 ° C, 200 ° C, 205 ° C, 210 ° C are 1560s, 610s, 275s, 70s, respectively, that is, the lower the temperature, the longer the failure time.
  • the temperature corresponding to the holding time can be estimated to be 137 ° C, which is 52 ° C higher than GST (85 ° C).
  • Automotive electronics has a 10-year retention of 120 degrees, so phase-change memories based on Sb 6Q Te 3Q Ti 1Q phase change materials can meet this need. While maintaining the temperature for 10 years, we can also obtain the crystallization activation energy of Sb 6 oTe 3( )Ti 1() .
  • the Sb 6Q Te 3Q Ti 1Q crystallization activation energy is 3. 5ev, compared to GST (2.3 ev) high 1. 2ev.
  • the increase in crystallization activation energy favors the thermal stability of the amorphous state.
  • 4 is a voltage-resistance curve of a phase change device unit based on a Sb 6() Te 3 ( )Ti 1 () film in Example 1.
  • the voltage pulse used for the test was 300 ns and the falling edge of the pulse was 30 ns. 5 ⁇
  • the voltage required from the crystalline state to the amorphous is 3. 5V. Therefore, the Sb 6Q Te 3Q Ti 1Q nanocomposite phase change material of the present embodiment can be used in electricity.
  • the pressure pulse acts to achieve a reversible phase change.
  • the Sb 6Q Te 3Q Ti 1Q nanocomposite phase change material of the present embodiment can be reversibly transformed between amorphous and polycrystalline under pulsed laser heating, thereby realizing reversible transformation of optical reflectivity.
  • Example 2 Preparation of Sb 72 Te 18 Ti 1Q nanocomposite phase change material: The nanocomposite phase change material in this example was obtained by co-sputtering a 513 7 ⁇ 6 18 alloy target with a Ti target.
  • the specific preparation conditions are as follows: Ar gas with a purity of 99.999% is simultaneously introduced into the co-sputtering process, a radio frequency power source is used for the Sb 72 Te 18 target, and a DC power source is used for the Ti target, and the RF power source used is 25 W. The DC power supply used is 15W. After the Sb 72 Te 18 target is illuminated, turn on the Ti target power. The co-sputtering time was 30 minutes and the film thickness was approximately 200 nm.
  • the Sb 72 Te 18 Ti 1Q nanocomposite phase change material obtained in this example was tested and found to have: Sb 8Q Te 1Q Ti 1Q sheet resistance of different heating rates from the obtained Sb 72 Te 18 Ti 1Q nanocomposite phase change material
  • the temperature relationship graph shows that the higher the heating rate, the higher the crystallization temperature.
  • the obtained Sb 72 Te 18 Ti 1Q nanocomposite phase change material has a 10-year holding temperature, While maintaining the temperature for 10 years, the crystallization activation energy of Sb 72 Te 18 Ti 1Q is much higher than that of GST (2.3 ev).
  • the increase of crystallization activation energy is beneficial to the thermal stability of amorphous state.
  • the obtained Sb 72 Te 18 Ti 1Q nanocomposite phase change material can realize reversible phase transition under voltage pulse action; under pulsed laser heating, its structure can be reversibly transformed between amorphous and polycrystalline, thus achieving reversible transformation of optical reflectivity.
  • Preparation of Sb 5Q Te 3Q Ti 2Q nanocomposite phase change material The nano composite phase change material in this embodiment is obtained by co-sputtering a Sb 5Q Te 3Q alloy target with a Ti target.
  • the specific preparation conditions are as follows: At the same time, the Ar gas with a purity of 99.999%, Sb 5() Te 3 is used .
  • the target uses RF power
  • the Ti target uses DC power
  • the RF power supply is 25W
  • the DC power used is 15W.
  • Co-sputtering power Ti target opening time of 50 minutes the film thickness of about 250nm Sb 5Q Te 3Q Ti 2Q nanocomposite obtained in the embodiment according to the present embodiment detects the phase change material is known: from the obtained Sb 5Q Te 3Q Ti
  • the relationship between Sb 5Q Te 3Q Ti 2Q sheet resistance and temperature of 2Q nanocomposite phase change materials with different heating rates shows that the higher the heating rate, the higher the crystallization temperature.
  • the obtained Sb 5Q Te 3Q Ti 2 (the lower the test temperature of the ⁇ fi-m composite phase change material, the longer the failure time.
  • the obtained Sb 5Q Te 3Q Ti 2Q nanocomposite phase change material has a 10-year holding temperature, While maintaining the temperature for 10 years, the crystallization activation energy of Sb 5Q Te 3Q Ti 2Q is much higher than that of GST (2.3 ev). The increase of crystallization activation energy is beneficial to the thermal stability of amorphous state.
  • the obtained Sb 5Q Te 3Q Ti 2Q nanocomposite phase change material can realize reversible phase transition under the action of voltage pulse; under pulsed laser heating, its structure can be reversibly transformed between amorphous and polycrystalline, thus achieving reversible transformation of optical reflectivity.
  • the nanocomposite phase change material in this example was obtained by co-sputtering a 513 4 ⁇ 6 45 alloy target with a Ti target.
  • the specific preparation conditions were as follows: At the same time, the Ar gas with a purity of 99.999% is used, the Sb 45 Te 45 target is a radio frequency power source, the Ti target is a DC power source, the RF power supply is 25W, and the DC power supply is 15W. Sb 45 Te after 45 target is started, and then .
  • Co-sputtering power Ti target opening time of 15 minutes the film thickness of about 100 nm or obtained in Example Sb 45 Te 45 Ti 1Q nanocomposite detected phase change material according to the present embodiment will be apparent: from the obtained Sb 45 Te 45 Ti
  • the relationship between the sheet resistance of Sb 45 Te 45 Ti 1Q and the temperature of 1Q nanocomposite phase change material is as follows: The higher the heating rate, the higher the crystallization temperature.
  • the obtained Sb 45 Te 45 Ti 1 ( ⁇ fi m composite The lower the test temperature of the phase change material, the longer the failure time.
  • the obtained Sb 45 Te 45 Ti 1Q nanocomposite phase change material has a 10-year holding temperature, while maintaining the temperature for 10 years, Sb 45 Te 45 Ti 1Q
  • the crystallization activation energy is much higher than GST (2.3 ev).
  • the increase of crystallization activation energy is beneficial to the thermal stability of amorphous state.
  • the obtained Sb 45 Te 45 Ti 1Q nanocomposite phase change material can be reversible in voltage pulse action. Phase change; under pulsed laser heating, the structure can be reversibly transformed between amorphous and polycrystalline, thereby achieving reversible transformation of optical reflectivity.
  • Example 5 Preparation of Sb 69 Te 23 Ti 8 nanocomposite phase change material:
  • Implementation Nanocomposite phase-change material is 5136 ⁇ / 1623 alloy sputtering target and a Ti target were obtained and specific conditions were as follows: while passing the co-sputtering process in a purity of 99.999% Ar gas, Sb The 69 Te 23 target uses RF power, the Ti target uses DC power, the RF power supply is 25W, and the DC power is 15 W. After the Sb 69 Te 23 target is illuminated, turn on the Ti target power. The co-sputtering time was 20 minutes and the film thickness was approximately 160 nm.
  • the Sb 69 Te 23 Ti 8 nanocomposite phase change material obtained in this example was tested and found to have: Sb 69 Te 23 Ti 8 sheet resistance and the different heating rate of the obtained Sb 69 Te 23 Ti 85 nanocomposite phase change material
  • the temperature relationship graph shows that the higher the heating rate, the higher the crystallization temperature.
  • the obtained Sb 69 Te 23 Ti 8 nanocomposite phase change material has a holding temperature of 10 years, and the crystallization activation energy of Sb 69 Te 23 Ti 8 is much higher than that of GST ( 2.3 ev) while maintaining the temperature for 10 years.
  • the increase in crystallization activation energy favors the thermal stability of the amorphous state.
  • the obtained Sb 69 Te 23 Ti 8 nanocomposite phase change material can realize reversible phase transition under voltage pulse action; under pulsed laser heating, its structure can be reversibly transformed between amorphous and polycrystalline, thereby achieving optical reflectivity. Reversible transformation.
  • Example 6 Preparation of a Ti doped with Ti atomic percentage content of 6%, 8% and 10% of the Ti-Sb 2 Te 3 phase-change memory material, and a non-doped Ti, Sb 2 Te 3 phase-change memory material.
  • the Ti-Sb 2 Te 3 phase change memory material in this embodiment is obtained by co-sputtering a 513 ⁇ 6 3 alloy target with a Ti target.
  • the specific preparation conditions are as follows: In the co-sputtering process, the Ar gas having a purity of 99.999% is simultaneously introduced, the Sb 2 Te 3 target is a radio frequency power source, the Ti target is a DC power source, and the used RF power source is 25 W. The DC power supply used is 15W. After the Sb 2 Te 3 target is illuminated, turn on the Ti target power. The total sputtering time can be adjusted according to the thickness of the desired phase change film.
  • the Sb 2 Te 3 phase change memory material of the present embodiment was obtained by sputtering with a Sb 2 Te 3 alloy target.
  • the doped with Ti according to the present embodiment obtained Ti-Sb 2 Te 3 no phase change memory material doped with Ti and Sb 2 Te 3 in the phase change memory material is obtained by detecting FIG. 5-8: 5, at a heating rate
  • the resistance of pure Sb 2 Te 3 and Ti_Sb 2 Te 3 film doped with different Ti contents as a function of temperature at 10 ° C / min.
  • the initial resistance of pure Sb 2 Te 3 is very low, since the as-deposited state has been partially crystallized. . From the crystallization temperature, the more Ti-doped content, the higher the crystallization temperature.
  • the crystallization temperatures of Ti-Sb 2 Te 3 films doped with 6% Ti, 8% Ti, and 10% Ti were 176 ° C, 185 ° C, and 194 ° C, respectively. From the viewpoint of amorphous resistance, when 6% Ti is doped, the amorphous state is one order of magnitude higher than pure Sb 2 Te 3 , while 8% Ti, 10% Ti is doped, and the amorphous resistance is lower than that of 6% Ti. . The high and low resistance ratios also increase first and then decrease as the Ti content increases. However, the thermal stability of the Ti-Sb 2 Te 3 film doped with 6% Ti, 8% Ti, and 10% Ti was remarkably improved. As shown in Fig.
  • the pure Sb 2 Te 3 in the as-deposited state already has a diffraction peak, which proves that it has partially crystallized.
  • the Ti-Sb 2 Te 3 film doped with 10% Ti showed no diffraction peak and was amorphous. It can be seen that Ti-Sb 2 Te 3 thinned after Ti doping The film does increase its crystallization temperature. From the XRD comparison of pure Sb 2 Te 3 and 10% Ti-doped Ti-Sb 2 Te 3 at 300 ° C, it can be seen that the two crystals have the same peak, so Ti-Sb 2 Te 3 after Ti doping The crystal structure did not change, ie there was no phase separation.
  • the Ti-Sb 2 Te 3 doped with Ti has a weaker diffraction peak, which indicates that the grain size decreases after doping.
  • the temperature corresponding to the retention time of Ti-Sb 2 Te 3 doped with 10% Ti is 105 ° C, which is 20 ° C higher than GST (85 ° C).
  • the demand for retention of consumer electronics is 10 years at 80 ° C, so Ti-Sb 2 Te 3 doped with 10% Ti meets its requirements.
  • the resistance and voltage curves obtained by a phase change memory device based on a Ti-Sb 2 Te 3 phase change material doped with 10% Ti As shown in FIG. 8, the resistance and voltage curves obtained by a phase change memory device based on a Ti-Sb 2 Te 3 phase change material doped with 10% Ti. As shown in Fig. 4, the Set and Reset voltages required at 100 ns are IV and 3. 3V, respectively. After the pulse width becomes smaller, the Set and Reset operations can still be tested, but the voltage required for the Set operation increases. Therefore, a phase change memory device based on a Ti-Sb 2 Te 3 phase change material doped with 10% Ti has a high crystallization rate and is capable of achieving a reversible transition between amorphous and crystalline states on the order of nanoseconds.
  • Example 7 A Ti-Sb 2 Te 3 phase change memory material having Ti-doped Ti content of 2% was prepared.
  • the Ti-Sb 2 Te 3 phase change memory material in this embodiment is obtained by co-sputtering a Sb 2 Te 3 alloy target with a Ti target.
  • the specific preparation conditions are as follows: In the co-sputtering process, the Ar gas having a purity of 99.999% is simultaneously introduced, the Sb 2 Te 3 target is a radio frequency power source, the Ti target is a DC power source, and the used RF power source is 25 W. The DC power supply used is 15W. After the Sb 2 Te 3 target is illuminated, turn on the Ti target power. The total sputtering time can be adjusted according to the thickness of the desired phase change film.
  • the Sb 2 Te 3 phase change memory material of the present embodiment was obtained by sputtering with a Sb 2 Te 3 alloy target.
  • the Ti-Sb 2 Te 3 phase change memory material obtained by the present embodiment is tested and found to be: In the Ti-Sb 2 Te 3 phase change memory material doped with 2% Ti, the Ti atom replaces the position of the Sb atom, and There is no phase separation.
  • the Ti-Sb 2 Te 3 phase change memory material doped with 2% bismuth uses electrical pulse to achieve reversible transformation of resistivity.
  • the Ti-Sb 2 Te 3 phase change memory material doped with 2% yttrium uses laser pulses to achieve a reversible transformation of optical reflectivity.
  • Ti-Sb 2 Te 3 phase change memory material doped with 2% Ti the amorphous resistance is an order of magnitude higher than that of pure Sb 2 Te 3 .
  • the crystallization temperature of the Ti-Sb 2 Te 3 phase change memory material doped with 2% Ti is greatly improved, the thermal stability is remarkably improved, and the data retention is enhanced.
  • the melting point and thermal conductivity of the Ti-Sb 2 Te 3 phase change memory material doped with 2% Ti are lowered.
  • the results of XRD annealing of Ti-Sb 2 Te 3 doped with 2% Ti and pure Sb 2 Te 3 at 300 ° C show that the two crystals have phases.
  • the difference is that Ti-Sb 2 Te 3 after Ti doping has a weaker diffraction peak, which indicates that the grain size decreases after doping.
  • phase-change memory device Based on the phase change memory device doped with 2% Ti of the Ti-Sb 2 Te 3 phase-change material of the obtained resistance voltage curve indicated, phase-change memory device based doped with 2% Ti of the Ti-Sb 2 Te 3 phase-change material having The higher crystallization rate enables reversible transformation of amorphous and crystalline states on the order of nanoseconds.
  • Example 8 A Ti-Sb 2 Te 3 phase change memory material having a Ti atomic content of Ti of 20% was prepared.
  • the Ti-Sb 2 Te 3 phase change memory material in this embodiment is obtained by co-sputtering a 513 ⁇ 6 3 alloy target with a Ti target.
  • the specific preparation conditions are as follows: In the co-sputtering process, the Ar gas having a purity of 99.999% is simultaneously introduced, the Sb 2 Te 3 target is a radio frequency power source, the Ti target is a DC power source, and the used RF power source is 25 W. The DC power supply used is 15W. After the Sb 2 Te 3 target is illuminated, turn on the Ti target power. The total sputtering time can be adjusted according to the thickness of the desired phase change film.
  • the Sb 2 Te 3 phase change memory material of the present embodiment was obtained by sputtering with a Sb 2 Te 3 alloy target.
  • the Ti-Sb 2 Te 3 phase change memory material obtained by the present embodiment is tested and found to be: In the Ti-Sb 2 Te 3 phase change memory material doped with 20% Ti, the Ti atom replaces the position of the Sb atom, and There is no phase separation.
  • the Ti-Sb 2 Te 3 phase change memory material doped with 20% Ti uses electrical pulse to achieve reversible transformation of resistivity.
  • the Ti-Sb 2 Te 3 phase change memory material doped with 20% Ti uses laser pulse to realize the reversible transformation of optical reflectivity.
  • the crystallization temperature of the Ti-Sb 2 Te 3 phase change memory material doped with 20% Ti is greatly improved, the thermal stability is remarkably improved, and the data retention is enhanced.
  • the melting point and thermal conductivity of the 11-513 ⁇ 6 3 phase change memory material doped with 20% Ti are reduced.
  • the results of XRD annealing of Ti-Sb 2 Te 3 doped with 20% Ti and pure Sb 2 Te 3 at 300 ° C show that the two crystals have the same peak, so Ti-Sb 2 Te 3 after Ti doping
  • the crystal structure did not change, ie there was no phase separation.
  • the difference is that the Ti-Sb 2 Te 3 doped with Ti has a weaker diffraction peak, which indicates that the grain size decreases after doping.
  • the temperature of Ti-Sb 2 Te 3 doped with 20% Ti is higher than GST (85 °C).
  • the demand for retention of consumer electronics is 10 years at 80 ° C, so Ti-Sb 2 Te 3 doped with 20% Ti meets its requirements.
  • the resistance and voltage curves obtained by phase change memory devices based on Ti-Sb 2 Te 3 phase change material doped with 20% Ti are known.
  • a phase change memory device of a Ti-Sb 2 Te 3 phase change material doped with 20% Ti has a high crystallization rate and is capable of achieving a reversible transition between amorphous and crystalline states on the order of nanoseconds.

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Abstract

可用于相变存储器的Sb-Te-Ti相变薄膜材料及其制备方法。Sb-Te-Ti相变存储材料，是在Sb-Te相变材料的基础上掺入Ti而成，掺入的Ti与Sb、Te均成键，其化学通式为SbxTeyTi100-x-y，其中0<x<80，0<y<100-x。当为Ti-Sb2Te3相变存储材料时，Ti原子替代Sb原子的位置，且没有分相。现有的Sb-Te相变材料结晶过程以晶粒生长占主导，相变速率快，然而保持力不能满足工业要求。Sb-Te-Ti相变存储材料的结晶温度得到大幅度地升高，保持力提升，热稳定性增强；同时，非晶态电阻降低，晶态电阻升高；可广泛应用于相变存储器。

Description

一种 Sb-Te-Ti相变存储材料及 Ti-Sb2Te3相变存储材料
技术领域 本发明涉及相变材料及其制备方法， 尤其是可用于相变存储器的 Sb-Te-Ti 相变薄膜材 料。
背景技术 相变存储器 （PCRAM) 原理是以硫系化合物为存储介质， 利用电能 （热量） 使材料在晶 态 （低阻） 与非晶态 （高阻） 之间相互转换实现信息的写入与擦除， 信息的读出靠测量电阻 的大小， 比较其高阻 " 1 "还是低阻 "0"来实现的。
Sb-Te系列相变材料结晶过程以晶粒生长占主导， 因此相变速率快， 而且熔点比 GST (Ge2Sb2Te5) 低， 因此所需功耗低。 然而 Sb_Te系列相变材料同时也存在结晶温度低， 热 稳定性差， 数据保持力差等缺点。
Sb2Te3相变材料有着非常快的结晶速度， 同时有较低的熔点。 但是 Sb2Te3的结晶温度非 常低， 热稳定性非常差。 而消费型电子要求非挥发性存储器至少能在 85°C的条件下保存数 据 10 年， 工业电子对其要求更加苛刻。 在没有掺杂的情况下， Sb2Te3相变材料不能应用于 相变存储器。 本发明在 Sb2Te3相变材料的基础上掺入 Ti， 从而大幅度提高其结晶温度， 提升数据保 持力， 以满足现实需要。
发明内容 本发明的目的主要在于提供一种用于相变存储器的 Sb-Te-Ti 相变材料， 以提高相变材 料的热稳定性、 非晶态电阻， 降低材料的 Reset电流与熔化温度等。 本发明还提供了一种用于相变存储器的掺 Ti的 Ti-Sb2Te3相变存储材料， 以提高其热稳 定性， 增加非晶态电阻。 同时掺入 Ti后晶粒变小， 且没有分相产生。 掺 Ti 后的 Ti-Sb2Te3 相变存储材料， 其熔点以及热导率均有所下降。 基于此相变材料的相变存储器， 随着 Ti 含 量的增加， 高阻先增大再降低， 高低阻比值也是先增大后减小。 为了解决上述技术问题， 本发明采用如下的技术方案来实现： 一种用于相变存储器的 Sb-Te-Ti相变存储材料， 是在 Sb-Te相变材料的基础上掺入 Ti 而成， 其化学通式为 SbxTeyTi1(W— x— y， 其中 0<x<80， 0<y< 100-x o 本发明化学通式中元素 的右下角部分代表摩尔比。 较佳的， 所述 X 的取值范围为 45 x 72， y的取值范围为 5 y 45。 所述 Sb-Te-Ti相变存储材料中， 掺入的 Ti与 Sb、 Te均成化学键。 较佳的， 所述 Sb-Te-Ti 相变存储材料为 Sb-Te-Ti 相变薄膜材料。 优选的， 所述 Sb- Te-Ti相变薄膜材料的厚度为 100_250nm。 较佳的， 所述 Sb-Te-Ti相变存储材料采用电脉冲作用实现电阻率的可逆转变。 较佳的， 所述 Sb-Te-Ti相变存储材料采用激光脉冲作用实现光学反射率的可逆转变。 所述 Sb-Te-Ti 相变存储材料的结晶温度得到大幅度提升， 热稳定性增强， 数据保持力 增强。 所述 Sb-Te-Ti相变存储材料的非晶态电阻降低， 晶态电阻升高。 本发明的上述的用于相变存储器的 Sb-Te-Ti相变存储材料， 所述 Sb-Te相变存储材料 为 Sb2Te3相变存储材料， 在 Sb2Te3相变存储材料中掺入 Ti后获得的 Sb_Te_Ti相变存储材 料为 Ti-Sb2Te3相变存储材料， 所述化学通式 SbxTeyTi1QQ— x— y中， y= ;c， Ti的原子百分含量 小于 50% 较佳的， 所述 Ti-Sb2Te3相变存储材料中， Ti的原子百分含量在 2%-20%之间。 较佳的， 所述 Ti-Sb2Te3相变存储材料中， Ti原子替代 Sb原子的位置， 且没有分相。 较佳的， 所述 Ti- Sb2Te3相变存储材料采用电脉冲作用实现电阻率的可逆转变。 较佳的， 所述 Ti- Sb2Te3相变存储材料采用激光脉冲作用实现光学反射率的可逆转变。
较佳的， 所述 11-513^63相变存储材料， 随着掺入 Ti含量的增加， Ti-Sb2Te3相变存储 材料的非晶态电阻先增大再降低。 较佳的， 所述 Ti-Sb2Te3相变存储材料的结晶温度得到大幅度提升， 热稳定性和数据保 持力增强。 较佳的， 所述 Ti-Sb2Te3相变存储材料的晶粒较小 （与 Sb2Te3的晶粒相比） ， 且没有分 相。 较佳的， 所述 Ti-Sb2Te3相变存储材料的熔点和热导率降低。 本发明的 Sb-Te-Ti相变存储材料的制备方法， 包括如下步骤： 按照化学通式 SbxTeyTi1(W— x y中 Sb和 Te的配比采用 SbxTey合金靶以及 Ti靶共溅射获得 所述 Sb-Te-Ti相变存储材料。 较佳的， 所述共溅射的溅射条件为： 在共溅射过程中同时通入纯度为 99. 999%以上的 Ar 气， SbxTey合金靶采用射频电源， Ti 靶采用直流电源。 优选的， 所述射频电源功率为 25W, 所述直流电源功率为 15 Wo 较佳的， 共溅射时， 所述 SbxTey合金靶起辉后， 再打开 Ti靶电源。 较佳的， 所述共溅射的时间为 15分钟一 50分钟。 所获得的 Sb-Te-Ti相变存储材料为相变薄膜材料， 其薄膜的厚度为 lOOnm— 250nm。 本发明所使用的溅射仪器为本领域现有技术中常规的溅射装置。 本发明还提供了一种基于 Sb-Te-Ti相变存储材料的相变存储器单元。 较佳的， 所述 Sb-Te-Ti相变存储材料为掺 Ti的 Ti- Sb2Te3相变材料。 较佳的， 所述基于掺 Ti的 Ti- Sb2Te3相变材料的相变存储器单元，掺 Ti后， Sb2Te3相变 存储材料的晶粒变小， 因此该 Ti- Sb2Te3相变存储材料与上下电极的粘附性增强。 较佳的， 所述基于掺 Ti的 Ti-Sb2Te3相变材料的相变存储器单元，随着掺入 Ti含量的增 加， 相变存储器单元的 Reset电压升高。 较佳的， 所述基于掺 Ti的 Ti-Sb2Te3相变材料的相变存储器单元，随着掺入 Ti含量的增 加， 相变存储器单元的高低阻更加稳定。 较佳的， 所述基于掺 Ti的 Ti-Sb2Te3相变材料的相变存储器单元，随着掺入 Ti含量的增 加， 相变存储器单元的高阻先增大后减小， 且高阻与低阻的比值也先增大后减小， 出现类似 的规律。 较佳的， 所述掺 Ti 的 Ti-Sb2Te3相变材料的相变存储器单元的高低阻比值大于一个数量 级。 较佳的， 所述掺 Ti的 Ti-Sb2Te3相变材料的相变存储器单元具有非常快的 Set操作速度
(ns数量级）。 较佳的， 所述掺 Ti的 Ti-Sb2Te3相变材料的相变存储器单元具有高的重复操作次数。 本发明的有益结果在于：
本发明在 Sb-Te相变存储材料的基础上掺入 Ti， Ti与 Sb、 Te均成键， 掺 Ti后所得的 Sb-Te-Ti 相变存储材料的结晶温度升高， 数据保持力提升， 热稳定性增强。 晶态电阻升 高， Reset功耗降低。 本发明的 Ti-Sb2Te3相变存储材料， Ti 原子替代 Sb 原子的位置， 且没有分相； Ti- Sb2Te3相变存储材料分布均匀， 晶粒较小； 其结晶温度得到大幅度提升， 热稳定性和数据保 持力增强； 随着掺入 Ti含量的增加， Ti-Sb2Te3相变存储材料的非晶态电阻先增大再降低； 其熔点和热导率降低。
附图说明
图 1 为实施例 1中不同升温速率的 Sb6oTe3()Ti1()薄膜的方块电阻与温度的关系曲线。 图 2 为实施例 1中 Sb6oTe3()Ti1()薄膜在不同温度下保持的时间。 图 3 为实施例 1中 Sb6QTe3QTi1Q薄膜的结晶激活能以及 10年保持温度。 图 4 为实施例 1中基于 Sb6()Te3()Ti1()薄膜的相变器件单元的电压一电阻曲线。 图 5 为实施例 6中在升温速率为 10°C/min时的， Sb2Te3和三种不同 Ti含量的 Ti_Sb2Te3薄 膜的方块电阻与温度曲线. 图 6为实施例 6中 Sb2Te3和掺 10% Ti的 Ti_Sb2Te3薄膜在 300°C退火 5分钟后的 X射线衍射 结果。 图 7 为实施例 6中掺 10%Ti的 Ti- Sb2Te3的数据保持力。 图 8为实施例 6中基于掺 10% Ti的 Ti-Sb2Te3的相变存储器件单元的电阻与电压曲线。
具体实施方式 下面结合具体实施例进一步阐述本发明， 应理解， 这些实施例仅用于说明本发明而不用 于限制本发明的保护范围。 实施例 1 制备 Sb6QTe3QTi1Q纳米复合相变材料： 本实施例中的纳米复合相变材料采用 Sb6QTe3Q合金靶与 Ti靶共溅射获得。 其具体制备 条件为： 在共溅射过程中同时通入纯度为 99. 999%的 Ar气， Sb6()Te3()靶采用射频电源， Ti靶 采用直流电源， 所采用的射频电源功率为 25W， 所采用的直流电源功率为 15W。 Sbje靶起 辉后， 再打开 Ti靶电源。 共溅射时间为 20分钟， 薄膜厚度大约在 170nm。 将本实施例所获得的 Sb6QTe3QTi1Q纳米复合相变材料经检测获得图 1-3: 图 1为不同升温速率的 Sb6QTe3QTi1Q方块电阻与温度的关系曲线图。 所用的升温速率分 别从 10°C/min-50°C/min。 在升温速率 10°C/min为纯的 Sb6QTe3Q的结晶温度大约为 130°C， 掺入 Ti后， 结晶温度大约为 212°C， 比原来的高 80多度。 升温速率越高， 结晶温度越高， 这是由于升温速率快， 原子来不及扩散， 因此结晶所需的时间变长。 图 2为 Sb6QTe3QTi1Q薄膜在不同温度下保持的时间图。 保持力是相变材料致关重要的一 个特性， 是衡量此相变材料能不能直接应用的重要参数之一。 由上面讨论可知， Sb6QTe3QTi10 的结晶温度为 212°C， 因此取保持力的测试温度点分别为 195°C、 200°C、 205°C、 210°C， 参 见图 2。 这是由于保持力的测试温度点必须在结晶温度以下， 保持力是用来表征非晶态的热 稳定性， 当测试温度点高于结晶温度时在升温的过程中相变材料已经结晶， 因此不能测试出 此非晶态的保持时间。 这里失效时间的定义为当薄膜电阻下降到刚升到测试温度点所对应的 初始电阻的一半所对应的时间。 经测试可得， 在 195°C、 200°C、 205°C、 210°C所对应的失 效时间分别为 1560s、 610s, 275s, 70s， 即温度越低， 失效时间越长。 图 3中， 根据阿列纽斯公式可以推算出保持时间所对应的温度为 137°C， 比 GST (85 。C ) 高 52°C。 汽车电子 10年保持力为 120度， 因此基于 Sb6QTe3QTi1Q相变材料的相变存储 器能够满足这种需求。 在得到 10年保持温度的同时， 我们也可以得到 Sb6oTe3()Ti1()结晶激活 能。 Sb6QTe3QTi1Q的结晶激活能为 3. 5ev, 相比于 GST (2. 3ev)高 1. 2ev。 结晶激活能的增加有 利于非晶态的热稳定性。 图 4为实施例 1中基于 Sb6()Te3()Ti1()薄膜的相变器件单元的电压一电阻曲线。 测试所用 电压脉冲为 300ns， 脉冲下降沿为 30ns。 从图 4可知， 从非晶到多晶所需的电压为 1. IV， 从晶态到非晶所需的电压为 3. 5V。 因此本实施例的 Sb6QTe3QTi1Q纳米复合相变材料可以在电 压脉冲作用实现可逆相变。 本实施例的 Sb6QTe3QTi1Q纳米复合相变材料在脉冲激光加热条件下，其结构可在非晶与多 晶之间可逆转变，从而实现光学反射率的可逆转变。 实施例 2 制备 Sb72Te18Ti1Q纳米复合相变材料： 本实施例中的纳米复合相变材料采用 5137^618合金靶与 Ti靶共溅射获得。 其具体制备 条件为： 在共溅射过程中同时通入纯度为 99. 999%的 Ar 气， Sb72Te18靶采用射频电源， Ti 靶采用直流电源， 所采用的射频电源功率为 25W， 所采用的直流电源功率为 15W。 Sb72Te18 靶起辉后， 再打开 Ti靶电源。 共溅射时间为 30分钟， 薄膜厚度大约在 200nm。 将本实施例所获得的 Sb72Te18Ti1Q纳米复合相变材料经检测可知： 从所获得的 Sb72Te18Ti1Q纳米复合相变材料不同升温速率的 Sb8QTe1QTi1Q方块电阻与温 度的关系曲线图可知： 升温速率越高， 结晶温度越高。 所获得的 Sb72Te18Ti1(^fi米复合相变材料的测试温度越低， 失效时间越长。 所获得的 Sb72Te18Ti1Q纳米复合相变材料具有 10年的保持温度， 在得到 10年保持温度 的同时， Sb72Te18Ti1Q的结晶激活能远高于 GST (2. 3ev)。 结晶激活能的增加有利于非晶态的 热稳定性。 所获得的 Sb72Te18Ti1Q纳米复合相变材料可以在电压脉冲作用实现可逆相变； 在脉冲激 光加热条件下，其结构可在非晶与多晶之间可逆转变，从而实现光学反射率的可逆转变。 实施例 3 制备 Sb5QTe3QTi2Q纳米复合相变材料： 本实施例中的纳米复合相变材料采用 Sb5QTe3Q合金靶与 Ti靶共溅射获得。 其具体制备 条件为： 在共溅射过程中同时通入纯度为 99. 999%的 Ar 气， Sb5()Te3。靶采用射频电源， Ti 靶采用直流电源， 所采用的射频电源功率为 25W， 所采用的直流电源功率为 15W。 Sb2Te靶 起辉后， 再打开 Ti靶电源。 共溅射时间为 50分钟， 薄膜厚度大约在 250nm。 将本实施例所获得的 Sb5QTe3QTi2Q纳米复合相变材料经检测可知： 从所获得的 Sb5QTe3QTi2Q纳米复合相变材料不同升温速率的 Sb5QTe3QTi2Q方块电阻与温 度的关系曲线图可知： 升温速率越高， 结晶温度越高。 所获得的 Sb5QTe3QTi2(^fi米复合相变材料的测试温度越低， 失效时间越长。 所获得的 Sb5QTe3QTi2Q纳米复合相变材料具有 10年的保持温度， 在得到 10年保持温度 的同时， Sb5QTe3QTi2Q的结晶激活能远高于 GST (2. 3ev)。 结晶激活能的增加有利于非晶态的 热稳定性。 所获得的 Sb5QTe3QTi2Q纳米复合相变材料可以在电压脉冲作用实现可逆相变； 在脉冲激 光加热条件下，其结构可在非晶与多晶之间可逆转变，从而实现光学反射率的可逆转变。 实施例 4 制备 Sb45Te45Ti1Q纳米复合相变材料： 本实施例中的纳米复合相变材料采用 5134^645合金靶与 Ti靶共溅射获得。 其具体制备 条件为： 在共溅射过程中同时通入纯度为 99. 999%的 Ar 气， Sb45Te45靶采用射频电源， Ti 靶采用直流电源， 所采用的射频电源功率为 25W， 所采用的直流电源功率为 15W。 Sb45Te45 靶起辉后， 再打开 Ti靶电源。 共溅射时间为 15分钟， 薄膜厚度大约在 100nm。 将本实施例所获得的 Sb45Te45Ti1Q纳米复合相变材料经检测可知： 从所获得的 Sb45Te45Ti1Q纳米复合相变材料不同升温速率的 Sb45Te45Ti1Q方块电阻与温 度的关系曲线图可知： 升温速率越高， 结晶温度越高。 所获得的 Sb45Te45Ti1(^fi米复合相变材料的测试温度越低， 失效时间越长。 所获得的 Sb45Te45Ti1Q纳米复合相变材料具有 10年的保持温度， 在得到 10年保持温度 的同时， Sb45Te45Ti1Q的结晶激活能远高于 GST (2. 3ev)。 结晶激活能的增加有利于非晶态的 热稳定性。 所获得的 Sb45Te45Ti1Q纳米复合相变材料可以在电压脉冲作用实现可逆相变； 在脉冲激 光加热条件下，其结构可在非晶与多晶之间可逆转变，从而实现光学反射率的可逆转变。 实施例 5 制备 Sb69Te23Ti8纳米复合相变材料： 本实施例中的纳米复合相变材料采用 5136</1623合金靶与 Ti靶共溅射获得。 其具体制备 条件为： 在共溅射过程中同时通入纯度为 99. 999%的 Ar 气， Sb69Te23靶采用射频电源， Ti 靶采用直流电源， 所采用的射频电源功率为 25W， 所采用的直流电源功率为 15 W。 Sb69Te23 靶起辉后， 再打开 Ti靶电源。 共溅射时间为 20分钟， 薄膜厚度大约在 160nm。 将本实施例所获得的 Sb69Te23Ti8纳米复合相变材料经检测可知： 从所获得的 Sb69Te23Ti85纳米复合相变材料不同升温速率的 Sb69Te23Ti8方块电阻与温度 的关系曲线图可知： 升温速率越高， 结晶温度越高。 所获得的 Sb69Te23Ti8纳米复合相变材料的测试温度越低， 失效时间越长。 所获得的 Sb69Te23Ti8纳米复合相变材料具有 10年的保持温度， 在得到 10年保持温度 的同时， Sb69Te23Ti8的结晶激活能远高于 GST (2. 3ev)。 结晶激活能的增加有利于非晶态的热 稳定性。 所获得的 Sb69Te23Ti8纳米复合相变材料可以在电压脉冲作用实现可逆相变； 在脉冲激 光加热条件下，其结构可在非晶与多晶之间可逆转变，从而实现光学反射率的可逆转变。 实施例 6 制备掺 Ti的 Ti原子百分比含量分别为 6%、 8%和 10%的 Ti-Sb2Te3相变存储材料， 以 及不掺 Ti的 Sb2Te3相变存储材料。 本实施例中的 Ti-Sb2Te3相变存储材料采用 513^63合金靶与 Ti靶共溅射获得。 其具体 制备条件为： 在共溅射过程中同时通入纯度为 99. 999%的 Ar气， Sb2Te3靶采用射频电源， Ti 靶采用直流电源， 所采用的射频电源功率为 25W， 所采用的直流电源功率为 15W。 Sb2Te3 靶起辉后， 再打开 Ti 靶电源。 其中共溅射时间可根据所需相变薄膜的厚度进行调控。 本实 施例的 Sb2Te3相变存储材料采用 Sb2Te3合金靶溅射获得。 将本实施例所获得的掺 Ti 的 Ti-Sb2Te3相变存储材料和不掺 Ti 的 Sb2Te3相变存储材 料经检测获得图 5-8: 如图 5所示， 在升温速率为 10°C/min下， 纯 Sb2Te3以及掺不同 Ti含量的 Ti_Sb2Te3 薄膜的电阻随温度变化的曲线。 由图 5可知， 纯 Sb2Te3的初始电阻很低， 这是由于沉积态已 经部分结晶。。 从结晶温度来看， 掺 Ti 含量越多， 结晶温度越高。 掺 6%Ti、 8%Ti、 10%Ti 的 Ti-Sb2Te3薄膜结晶温度分别为 176°C、 185°C、 194 °C。 从非晶态电阻来看， 掺入 6%Ti 时， 非晶态比纯 Sb2Te3高一个数量级， 而掺入 8% Ti、 10%Ti， 非晶态电阻比掺 6%Ti的低。 高低阻比值也随着掺入 Ti含量的增加， 先增大， 后减小。 但是掺入 6%Ti、 8%Ti、 10%Ti 的 Ti-Sb2Te3薄膜的热稳定性均显著提高。 如图 6 所示， 沉积态的纯 Sb2Te3已经有衍射峰出现， 证明其已经部分结晶。 而掺入 10%Ti后的 Ti-Sb2Te3薄膜， 没有出现衍射峰， 为非晶态。 由此可知掺 Ti后的 Ti-Sb2Te3薄 膜确实提高了其结晶温度。 从纯 Sb2Te3和掺 10%Ti的 Ti-Sb2Te3在 300°C退火的 XRD对比结 果可知， 两种晶体具有相同的绗射峰， 因此掺 Ti后的 Ti-Sb2Te3晶体结构并没有改变， 即没 有分相。 不同的是掺 Ti后的 Ti-Sb2Te3， 衍射峰强变弱了， 这表明掺杂后， 其晶粒减小。 如图 7所示， 根据阿列纽斯公式可以推算出掺 10%Ti的 Ti-Sb2Te3保持时间所对应的温 度为 105°C,比 GST (85°C ) 高 20°C。 而消费型电子对保持力的要求是 80°C下保存 10年， 因 此掺 10%Ti的 Ti- Sb2Te3满足其要求。
如图 8所示， 基于掺 10%Ti的 Ti-Sb2Te3相变材料的相变存储器件所得到的电阻与电压 曲线。 由图 4可知， 在 100ns的时候需要的 Set与 Reset电压分别为 IV和 3. 3V。 脉冲宽度 变小后， 依然能够实验 Set 与 Reset操作， 但是 Set操作所需电压有所增加。 因此基于掺 10%Ti的 Ti-Sb2Te3相变材料的相变存储器件具有较高的结晶速率， 能够在纳秒数量级实现非 晶态与晶态的可逆转变。 实施例 7 制备掺 Ti的 Ti原子百分比含量分别为 2%的 Ti-Sb2Te3相变存储材料。 本实施例中的 Ti-Sb2Te3相变存储材料采用 Sb2Te3合金靶与 Ti靶共溅射获得。 其具体 制备条件为： 在共溅射过程中同时通入纯度为 99. 999%的 Ar气， Sb2Te3靶采用射频电源， Ti 靶采用直流电源， 所采用的射频电源功率为 25W， 所采用的直流电源功率为 15W。 Sb2Te3 靶起辉后， 再打开 Ti 靶电源。 其中共溅射时间可根据所需相变薄膜的厚度进行调控。 本实 施例的 Sb2Te3相变存储材料采用 Sb2Te3合金靶溅射获得。 将本实施例所获得的掺 Ti的 Ti-Sb2Te3相变存储材料经检测可知： 掺 2%Ti的 Ti-Sb2Te3相变存储材料中， Ti原子替代 Sb原子的位置， 且没有分相。 掺 2%Ή的 Ti- Sb2Te3相变存储材料采用电脉冲作用实现电阻率的可逆转变。 掺 2%Ή的 Ti- Sb2Te3相变存储材料采用激光脉冲作用实现光学反射率的可逆转变。 掺 2%Ti的 Ti-Sb2Te3相变存储材料， 非晶态电阻比纯 Sb2Te3高一个数量级。 掺 2%Ti 的 Ti-Sb2Te3相变存储材料的结晶温度得到大幅度提升， 热稳定性显著提高， 数据保持力增强。 掺 2%Ti的所述 Ti-Sb2Te3相变存储材料的熔点和热导率降低。 从掺 2%Ti的 Ti-Sb2Te3和纯 Sb2Te3在 300°C退火的 XRD对比结果可知， 两种晶体具有相 同的绗射峰， 因此掺 Ti后的 Ti_Sb2Te3晶体结构并没有改变， 即没有分相。 不同的是掺 Ti 后的 Ti-Sb2Te3， 衍射峰强变弱了， 这表明掺杂后， 其晶粒减小。 基于掺 2%Ti的 Ti-Sb2Te3相变材料的相变存储器件所得到的电阻与电压曲线可知， 基于 掺 2%Ti 的 Ti-Sb2Te3相变材料的相变存储器件具有较高的结晶速率， 能够在纳秒数量级实现 非晶态与晶态的可逆转变。
实施例 8 制备掺 Ti的 Ti原子百分比含量分别为 20%的 Ti-Sb2Te3相变存储材料。 本实施例中的 Ti-Sb2Te3相变存储材料采用 513^63合金靶与 Ti靶共溅射获得。 其具体 制备条件为： 在共溅射过程中同时通入纯度为 99. 999%的 Ar气， Sb2Te3靶采用射频电源， Ti 靶采用直流电源， 所采用的射频电源功率为 25W， 所采用的直流电源功率为 15W。 Sb2Te3 靶起辉后， 再打开 Ti 靶电源。 其中共溅射时间可根据所需相变薄膜的厚度进行调控。 本实 施例的 Sb2Te3相变存储材料采用 Sb2Te3合金靶溅射获得。 将本实施例所获得的掺 Ti的 Ti-Sb2Te3相变存储材料经检测可知： 掺 20%Ti的 Ti-Sb2Te3相变存储材料中， Ti原子替代 Sb原子的位置， 且没有分相。 掺 20%Ti的 Ti- Sb2Te3相变存储材料采用电脉冲作用实现电阻率的可逆转变。 掺 20%Ti的 Ti- Sb2Te3相变存储材料采用激光脉冲作用实现光学反射率的可逆转变。 掺 20%Ti的 Ti-Sb2Te3相变存储材料的结晶温度得到大幅度提升， 热稳定性显著提高， 数据保持力增强。 掺 20%Ti的所述 11-513^63相变存储材料的熔点和热导率降低。 从掺 20%Ti的 Ti-Sb2Te3和纯 Sb2Te3在 300°C退火的 XRD对比结果可知， 两种晶体具有 相同的绗射峰， 因此掺 Ti 后的 Ti-Sb2Te3晶体结构并没有改变， 即没有分相。 不同的是掺 Ti后的 Ti-Sb2Te3， 衍射峰强变弱了， 这表明掺杂后， 其晶粒减小。
根据阿列纽斯公式可以推算出掺 20%Ti的 Ti-Sb2Te3保持时间所对应的温度比 GST (85 °C ) 高。 而消费型电子对保持力的要求是 80°C下保存 10年， 因此掺 20%Ti的 Ti-Sb2Te3满 足其要求。 基于掺 20%Ti 的 Ti-Sb2Te3相变材料的相变存储器件所得到的电阻与电压曲线可知， 基 于掺 20%Ti 的 Ti-Sb2Te3相变材料的相变存储器件具有较高的结晶速率， 能够在纳秒数量级 实现非晶态与晶态的可逆转变。
本发明实施例的描述和应用是说明性的， 并非想将本发明的范围限制在上述实施例中。 这里所披露的实施例的变形和改变是可能的， 对于那些本领域的普通技术人员来说实施例的 替换和等效的各种部件是公知的。 本领域技术人员应该清楚的是， 在不脱离本发明的精神或 本质特征的情况下， 本发明可以以其他形式、 结构、 布置、 比例， 以及用其他基底、 材料和 部件来实现。 在不脱离本发明范围和精神的情况下， 可以对这里所披露的实施例进行其他变 形和改变。

Claims

权利要求书
1. 一种用于相变存储器的 Sb-Te-Ti相变存储材料， 为在 Sb-Te相变存储材料中掺入 Ti而 成， 其化学通式为 SbxTeyTi1(X)_x_y， 其中 0<x<80， 0<y< 100-x。
2. 如权利要求 1 所述的用于相变存储器的 Sb-Te-Ti相变存储材料， 其特征在于， X 的取 值范围为 45 x 72， y的取值范围为 5 y 45。
3. 如权利要求 1所述的用于相变存储器的 Sb-Te-Ti相变存储材料， 其特征在于， 所述 Sb- Te-Ti相变存储材料采用电脉冲作用实现电阻率的可逆转变。
4. 如权利要求 1所述的用于相变存储器的 Sb-Te-Ti相变存储材料， 其特征在于， 所述 Sb- Te-Ti相变存储材料采用激光脉冲作用实现光学反射率的可逆转变。
5. 如权利要求 1所述的用于相变存储器的 Sb-Te-Ti相变存储材料， 其特征在于， 所述 Sb- Te-Ti相变存储材料为 Sb-Te-Ti相变薄膜材料。
6. 如权利要求 1所述的用于相变存储器的 Sb-Te-Ti相变存储材料， 其特征在于， 所述 Sb- Te相变存储材料为 Sb2Te3相变存储材料， 在 Sb2Te3相变存储材料中掺入 Ti 后获得的 Sb-Te-Ti相变存储材料为 Ti-Sb2Te3相变存储材料， 所述化学通式 SbxTeyTi1QQ— x— y中， y=-x , Ti的原子百分含量小于 50%。
2
7. 如权利要求 6所述的用于相变存储器的 Sb-Te-Ti相变存储材料， 其特征在于， 所述 Ti- Sb2Te3相变存储材料中， Ti的原子百分含量在 2%-20%之间。
8. 如权利要求 6所述的用于相变存储器的 Sb-Te-Ti相变存储材料， 其特征在于， 所述 Ti- Sb2Te3相变存储材料中， Ti原子替代 Sb原子的位置， 且没有分相。
9. 如权利要求 6所述的用于相变存储器的 Sb-Te-Ti相变存储材料， 其特征在于， 所述 Ti- Sb2Te3相变存储材料， 随着掺入 Ti含量的增加， Ti-Sb2Te3相变存储材料的非晶态电阻 先增大再降低。
10. 如权利要求 1-9任一所述的用于相变存储器的 Sb-Te-Ti相变存储材料的制备方法， 包括 如下步骤： 按照化学通式 SbxTeyTi1 ()Q_x_y中 Sb和 Te的配比采用 SbxTey合金靶以及 Ti靶 共溅射获得所述 Sb-Te-Ti相变存储材料。
11. 如权利要求 10 所述的制备方法， 其特征在于， 所述共溅射的溅射条件为： 在共溅射过 程中同时通入纯度为 99. 999%以上的 Ar气， SbxTey合金靶采用射频电源， Ti 靶采用直 流电源。
12. 如权利要求 11 所述的制备方法， 其特征在于， 共溅射时， 所述 SbxTey合金靶起辉后， 再打开 Ti靶电源。
13. 如权利要求 11 所述的制备方法， 其特征在于， 所述射频电源功率为 25 W， 所述直流电 源功率为 15 W; 所述共溅射的时间为 15-50分钟。
14. 如权利要求 10所述的制备方法， 其特征在于， 所获得的 Sb-Te-Ti相变存储材料为相变 薄膜材料， 其薄膜的厚度为 lOOnm— 250
15. 一种基于权利要求 1-9任一所述的 Sb-Te-Ti相变存储材料的相变存储器单元。
16. 如权利要求 15 所述的相变存储器单元， 其特征在于， 所述 Sb-Te-Ti 相变存储材料为 Ti-Sb2Te3相变存储材料， 且随着掺入 Ti含量的增加， 所述相变存储器单元的 Reset 电 压升高； 随着掺入 Ti 含量的增加， 所述相变存储器单元的高阻先增大后减小， 且高阻 与低阻的比值也先增大后减小。
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