WO2013129037A1 - マイクロ波加熱処理装置および処理方法 - Google Patents
マイクロ波加熱処理装置および処理方法 Download PDFInfo
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- WO2013129037A1 WO2013129037A1 PCT/JP2013/052561 JP2013052561W WO2013129037A1 WO 2013129037 A1 WO2013129037 A1 WO 2013129037A1 JP 2013052561 W JP2013052561 W JP 2013052561W WO 2013129037 A1 WO2013129037 A1 WO 2013129037A1
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- microwave
- microwave introduction
- wafer
- processing container
- introduction ports
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/70—Feed lines
- H05B6/707—Feed lines using waveguides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/6408—Supports or covers specially adapted for use in microwave heating apparatus
- H05B6/6411—Supports or covers specially adapted for use in microwave heating apparatus the supports being rotated
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/80—Apparatus for specific applications
- H05B6/806—Apparatus for specific applications for laboratory use
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2206/00—Aspects relating to heating by electric, magnetic, or electromagnetic fields covered by group H05B6/00
- H05B2206/04—Heating using microwaves
- H05B2206/044—Microwave heating devices provided with two or more magnetrons or microwave sources of other kind
Definitions
- the present invention relates to a microwave heat treatment apparatus that performs a predetermined treatment by introducing a microwave into a treatment container, and a treatment method that heat-treats an object to be processed using the microwave heat treatment apparatus.
- the depth of the diffusion layer in the transistor manufacturing process is becoming shallower.
- the activation of doping atoms injected into the diffusion layer has been performed by a rapid heating process called RTA (Rapid Thermal Annealing) using a lamp heater.
- RTA Rapid Thermal Annealing
- the depth of the diffusion layer becomes deeper than the allowable range, which causes a problem of hindering fine design. Incomplete control of the depth of the diffusion layer is a factor that degrades the electrical characteristics of the device, such as the generation of leakage current.
- Patent Document 1 Japanese Patent Laid-Open No. 62-2680866 discloses a microwave heating apparatus that heats a sample by introducing microwaves from a rectangular waveguide into a regular quadrangular pyramid horn. Has been proposed.
- the TE 10 mode orthogonal two-polarized microwaves are irradiated to the sample in the same phase by rotating the angle between the rectangular waveguide and the regular pyramid horn by 45 degrees in the axial direction. It is supposed to be possible.
- Patent Document 2 Japanese Utility Model Laid-Open No. 6-17190 discloses a square having a size of ⁇ / 2 to ⁇ of the free space wavelength of a microwave introduced into a heating chamber as a heating device for bending an object to be heated. A microwave heating apparatus set in a cross section has been proposed.
- the microwave has a feature that the wavelength is as long as several tens of millimeters and that standing waves are easily formed in the processing container. Therefore, for example, when a semiconductor wafer is heat-treated with microwaves, there is a problem that the distribution of the intensity of the electromagnetic field is generated within the surface of the semiconductor wafer and the heating temperature is likely to be uneven.
- the stirring effect by the stirrer is small, and in the semiconductor process, there is a concern about generation of particles from the rotation driving unit of the stirrer.
- the present invention provides a microwave heat treatment apparatus and a treatment method capable of performing uniform treatment on an object to be treated.
- the microwave heat treatment apparatus of the present invention includes a treatment container that has a microwave radiation space therein and that accommodates the object to be treated, a support device that supports the object to be treated in the treatment container, and heats the object to be treated.
- a microwave heat treatment apparatus comprising: a microwave introduction device that generates a microwave for treatment and introduces the microwave into the treatment container.
- the processing container has an upper wall, a bottom wall, and four side walls connected to each other, and the upper wall receives the microwave generated in the microwave introduction device.
- a plurality of microwave introduction ports to be introduced into the processing container.
- Each of the plurality of microwave introduction ports has a rectangular shape in plan view having a long side and a short side, and the long side and the short side are provided so as to be parallel to the inner wall surfaces of the four side walls.
- the support device includes a support member that contacts and supports the object to be processed, and a rotation mechanism that rotates the object to be processed supported by the support member. Yes.
- the support device may further include a height position adjustment mechanism that adjusts a height position at which the support member supports the object to be processed.
- the plurality of microwave introduction ports may include first to fourth microwave introduction ports.
- the first to fourth microwave introduction ports are two microwave introduction ports that form an inner microwave radiation zone in a direction from the center of the upper wall toward the outside. And two microwave introduction ports forming an outer microwave radiation zone.
- the two microwave introduction ports forming the inner microwave radiation zone have their centers overlapping on the inner circumference of the two virtual concentric circles, and the outer microwave radiation zone.
- the two microwave introduction ports that form the circles may be arranged so that their centers overlap on the outer circumference of the two virtual concentric circles.
- the first to fourth microwave introduction ports are arranged such that central axes parallel to the direction of the long side of two adjacent microwave introduction ports are orthogonal to each other, and The center axes of two microwave introduction ports that are not adjacent to each other may be arranged so as not to overlap on the same straight line.
- the plurality of microwave introduction ports may be arranged at different distances from the center of the upper wall in a direction from the center of the upper wall to the outside.
- the ratio (L 1 / L 2 ) between the long side length L 1 and the short side length L 2 of the microwave introduction port may be 4 or more.
- the microwave introduction device is mounted on the outside of the upper wall of the processing vessel and a waveguide that transmits the microwave toward the processing vessel, and is made of a plurality of metals.
- an adapter member constituted by a block body.
- the said microwave introduction apparatus of this invention WHEREIN:
- the said adapter member may have a substantially S-shaped waveguide which transmits a microwave inside. In this case, one end side of the waveguide is connected to the waveguide, and the other end side is connected to the microwave introduction port so that a part or all of the waveguide and the microwave introduction port are You may connect in the position which does not mutually overlap up and down.
- the processing method of the present invention includes a processing container that has a microwave radiation space therein and that accommodates the object to be processed, a support device that supports the object to be processed in the processing container, and heat-treating the object to be processed. And a microwave introduction apparatus that generates and introduces the microwave into the processing container.
- the processing container has an upper wall, a bottom wall, and four side walls connected to each other, and the upper wall receives the microwave generated in the microwave introduction device.
- Each of the plurality of microwave introduction ports has a rectangular shape in plan view having a long side and a short side, and the long side and the short side are provided so as to be parallel to the inner wall surfaces of the four side walls.
- the support device includes a support member that contacts and supports the object to be processed, and a rotation mechanism that rotates the object to be processed supported by the support member.
- the plurality of microwave introduction ports may form an inner microwave radiation zone and an outer microwave radiation zone in a direction from the center of the upper wall toward the outer side. It is divided into.
- the object to be processed is processed by introducing a microwave from each of the plurality of microwave introduction ports while rotating the object to be processed supported by the support member by the rotation mechanism. To do.
- the support device may further include a height position adjustment mechanism for adjusting a height position at which the support member supports the object to be processed.
- the processing method of the present invention includes a first step in which the object to be processed supported by the support member is set to a first height position by the height position adjusting mechanism, and the height is adjusted. And a second step of processing the object supported by the support member by setting the second height position different from the first height position by the position adjusting mechanism. Good.
- microwave heat treatment apparatus and treatment method of the present invention it is possible to perform uniform heat treatment on the object to be treated.
- FIG. 1 It is sectional drawing which shows the structure of the outline of the microwave heat processing apparatus which concerns on the 1st Embodiment of this invention. It is principal part sectional drawing of the gate valve vicinity in FIG. It is explanatory drawing which shows the structural example of a support pin. It is another explanatory drawing which shows the structural example of a support pin. It is explanatory drawing which shows the schematic structure of the high voltage power supply part of the microwave introduction apparatus in the 1st Embodiment of this invention. It is a top view which shows the lower surface of the ceiling part of the processing container shown in FIG. It is explanatory drawing which expands and shows a microwave introduction port.
- FIG. 1 is a cross-sectional view showing a schematic configuration of a microwave heat treatment apparatus according to the present embodiment.
- the microwave heat treatment apparatus 1 according to the present embodiment transmits microwaves to a semiconductor wafer (hereinafter simply referred to as “wafer”) W for manufacturing a semiconductor device, for example, with a plurality of continuous operations. It is an apparatus that performs annealing treatment by irradiation.
- the microwave heat treatment apparatus 1 supports a wafer W in the processing container 2, a processing container 2 that accommodates a wafer W that is an object to be processed, a microwave introduction apparatus 3 that introduces microwaves into the processing container 2, and the processing container 2.
- a support device 4 a gas supply mechanism 5 for supplying gas into the processing container 2, an exhaust device 6 for evacuating the inside of the processing container 2, and a control unit 8 for controlling each component of the microwave heating apparatus 1. And.
- the processing container 2 is made of a metal material.
- a material for forming the processing container 2 for example, aluminum, aluminum alloy, stainless steel or the like is used.
- the microwave introduction device 3 is provided in the upper part of the processing container 2 and functions as a microwave introduction means for introducing electromagnetic waves (microwaves) into the processing container 2. The configuration of the microwave introduction device 3 will be described in detail later.
- the processing container 2 has a plate-like ceiling portion 11 as an upper wall and a bottom portion 13 as a bottom wall, and four side wall portions 12 as side walls connecting the ceiling portion 11 and the bottom portion 13. Furthermore, the processing container 2 includes a plurality of microwave introduction ports 10 provided so as to vertically penetrate the ceiling portion 11, a carry-in / out port 12 a provided in the side wall portion 12, and an exhaust port 13 a provided in the bottom portion 13. And have.
- the four side wall portions 12 have a rectangular tube shape in which a horizontal cross section is connected at a right angle. Therefore, the processing container 2 has a cubic shape with a hollow inside.
- the inner surface of each side wall part 12 is all flat and has a function as a reflecting surface for reflecting microwaves.
- all the inner wall surfaces (that is, the inside of the ceiling portion 11, the four side wall portions 12, and the bottom portion 13) of the processing container 2 are mirror-finished.
- the reflection efficiency of the radiant heat from the wafer W can be improved by mirror-finishing the inner wall surface of the processing container 2.
- the surface area of the inner wall surface of the processing container 2 can be reduced by mirror finishing, the microwave absorbed by the wall of the processing container 2 can be reduced and the reflection efficiency of the microwave can be improved. Therefore, it is possible to perform an efficient annealing process on the wafer W, and the temperature reached by the wafer W can be made higher than when the mirror finish is not performed.
- the processing of the processing container 2 may be performed by cutting.
- the loading / unloading port 12a is for loading / unloading the wafer W to / from a transfer chamber (not shown) adjacent to the processing container 2.
- a gate valve GV is provided between the processing container 2 and a transfer chamber (not shown).
- the gate valve GV has a function of opening and closing the loading / unloading port 12a, and the processing container 2 is hermetically sealed in the closed state, and the wafer W can be transferred between the processing container 2 and a transfer chamber (not shown) in the open state.
- FIG. 2 is a cross-sectional view of the main part of the processing vessel 2 near the gate valve GV.
- the gate valve GV includes a main body 110, a plate-like block 111 that is fitted in a recess of the main body 110, and a drive mechanism (not shown).
- the main body 110 and the block 111 constitute a valve body.
- the drive mechanism displaces the valve body in the vertical direction and the horizontal direction.
- Both the main body 110 and the block 111 are made of a metal such as stainless steel or aluminum.
- the block 111 is a consumable part that can be replaced because it is exposed to the space in the processing container 2.
- a gap 112 is formed between the main body 110 and the block 111 to form a choke structure for preventing microwave leakage.
- a frame body 113 is disposed so as to contact the gate valve GV.
- the frame 113 is made of a metal such as stainless steel or aluminum.
- the frame 113 is a consumable part that can be replaced because it is exposed to the space in the processing container 2.
- the frame 113 is provided with an opening 113a having a size substantially corresponding to the loading / unloading port 12a.
- An electromagnetic shield member 114 and an O-ring 115 are disposed between the frame 113 and the side wall 12 of the processing container 2 so as to surround the opening 113a. As shown in FIG. 2, the electromagnetic shield member 114 is disposed on the inner side and the O-ring 115 is disposed on the outer side.
- the main body 110 and the block 111 which are valve bodies, are provided so as to be displaceable in a vertical direction and a horizontal direction by a drive unit (not shown), whereby the gate valve GV is opened and closed.
- a drive unit not shown
- the gate valve GV is opened and closed.
- the inner surface of the block 111 exposed in the processing container 2 may become an inclined surface and affect the reflection of the microwave.
- a reflector for correcting the inclined surface to form a vertical surface may be attached to the inner wall surface of the block 111.
- the support device 4 includes a hollow tubular shaft 14 that extends substantially through the center of the bottom portion 13 of the processing container 2 and extends to the outside of the processing container 2, and a plurality (for example, three) provided substantially horizontally from the vicinity of the upper end of the shaft 14. ) And a plurality of support pins 16 detachably attached to the respective arm portions 15. Furthermore, the support device 4 supports the shaft 14, the rotation drive unit 17 that rotates the shaft 14, the vertical drive unit 18 that displaces the shaft 14 up and down, and connects the rotary drive unit 17 and the lift drive unit 18. And a movable connecting portion 19 to be operated. The rotation drive unit 17, the elevating drive unit 18, and the movable connection unit 19 are provided outside the processing container 2. In addition, when making the inside of the processing container 2 into a vacuum state, a seal mechanism 20 such as a bellows can be provided around a portion where the shaft 14 penetrates the bottom portion 13.
- a seal mechanism 20 such as a bellows can be provided around a portion where the shaft 14 penetrates
- the shaft 14, the arm unit 15, the rotation drive unit 17, and the movable connection unit 19 constitute a rotation mechanism that rotates the wafer W supported by the support pins 16 in the horizontal direction.
- the shaft 14, the arm unit 15, the elevating drive unit 18, and the movable connecting unit 19 constitute a height position adjusting mechanism that adjusts the height position of the wafer W supported by the support pins 16. Yes.
- the plurality of support pins 16 contacts the back surface of the wafer W in the processing container 2 and supports the wafer W.
- the plurality of support pins 16 are arranged so that their upper ends are aligned in the circumferential direction of the wafer W.
- the plurality of arm portions 15 rotate around the shaft 14 by driving the rotation driving portion 17 to revolve each support pin 16 in the horizontal direction. Further, the plurality of support pins 16 and the arm portion 15 are configured to be moved up and down in the vertical direction together with the shaft 14 by driving the lifting drive unit 18.
- the support device 4 has a mechanism (not shown) that adjusts the inclination of the shaft 14 in order to maintain the level of the wafer W supported by the arm portion 15 and the support pins 16.
- the following measures are taken in the support device 4 in order to prevent microwave leakage through the support device 4, prevent abnormal discharge, prevent particles from being generated from the drive portion, and the like.
- a double choke structure is provided in the tubular shaft 14 although not shown.
- a ground terminal such as a shield finger (not shown) is attached to the shaft 14 and is maintained at the ground potential.
- an exhaust / purge mechanism (not shown) for exhausting or purging the inside of the shaft 14 is provided.
- the plurality of support pins 16 and the arm portion 15 are made of a dielectric material.
- a material for forming the plurality of support pins 16 and the arm portion 15 for example, quartz, ceramics, or the like can be used.
- FIG. 3 and 4 show a configuration example of the support pin 16 attached to the arm portion 15.
- FIG. 3 illustrates a state in which two support pins 16A and 16B are attached to one arm portion 15.
- the support pins 16A are in contact with and supported by the back surface near the outer peripheral portion of the wafer W, and the support pins 16B are in contact with and supported by the back surface of the wafer W at positions closer to the inside of the wafer W in the radial direction than the support pins 16A.
- the support pin 16 ⁇ / b> A is detachably mounted by being fitted into mounting holes 15 a and 15 a provided in the arm portion 15.
- the support pin 16B is detachably mounted by being fitted into mounting holes 15b and 15b provided in the arm portion 15.
- the support pin 16A and the support pin 16B can be securely fixed to the arm portion 15. Therefore, it is possible to prevent the support pins 16A and the support pins 16B from falling off due to, for example, electrostatic adsorption to the wafer W.
- the generation of particles can be reduced as compared with the screwing method or the like.
- FIG. 4 shows a state in which the support pin 16A is replaced with the support pin 16C and the support pin 16B is removed from the state of FIG.
- the support pins 16 ⁇ / b> C have an inclined surface 16 ⁇ / b> C ⁇ b> 1 that contacts the bevel portion of the wafer W and supports the wafer W.
- the position, the contact state with the wafer W, and the like can be selected as appropriate.
- Rotational drive unit 17 is not particularly limited as long as it can rotate shaft 14, and may include, for example, a motor (not shown).
- the raising / lowering drive part 18 will not be restrict
- the rotation drive unit 17 and the elevation drive unit 18 may be an integrated mechanism or may not have the movable connecting unit 19.
- the rotation mechanism that rotates the wafer W in the horizontal direction and the height position adjustment mechanism that adjusts the height position of the wafer W may have other configurations as long as these objects can be realized.
- the exhaust device 6 has, for example, a vacuum pump such as a dry pump.
- the microwave heat treatment apparatus 1 further includes an exhaust pipe 21 that connects the exhaust port 13 a and the exhaust apparatus 6, and a pressure adjustment valve 22 provided in the middle of the exhaust pipe 21.
- the microwave heat processing apparatus 1 can also process by atmospheric pressure, and a vacuum pump is unnecessary in that case.
- a vacuum pump such as a dry pump as the exhaust device 6, it is also possible to use an exhaust facility provided in a facility where the microwave heat treatment apparatus 1 is installed.
- the microwave heat treatment apparatus 1 further includes a gas supply mechanism 5 that supplies gas into the processing container 2.
- the gas supply mechanism 5 includes a gas supply device 5 a provided with a gas supply source (not shown), and a plurality of pipes 23 connected to the gas supply device 5 a for introducing a processing gas into the processing container 2.
- the plurality of pipes 23 are connected to the side wall 12 of the processing container 2.
- the gas supply device 5a is configured to supply, for example, a gas such as N 2 , Ar, He, Ne, O 2 , or H 2 into the processing container 2 as a processing gas or a cooling gas through the plurality of pipes 23 in a side flow manner. It is configured so that it can be supplied.
- the gas supply into the processing container 2 may be performed by providing a gas supply unit at a position (for example, the ceiling portion 11) facing the wafer W, for example.
- the microwave heat treatment apparatus 1 further includes a mass flow controller and an opening / closing valve provided in the middle of the pipe 23. The types of gases supplied into the processing container 2 and the flow rates of these gases are controlled by a mass flow controller and an opening / closing valve.
- the microwave heat treatment apparatus 1 further includes a rectifying plate 24 having a frame shape between the support pins 16 in the processing vessel 2 and the side wall portion 12.
- the rectifying plate 24 has a plurality of rectifying holes 24 a provided so as to penetrate the rectifying plate 24 vertically.
- the rectifying plate 24 is for flowing toward the exhaust port 13a while rectifying the atmosphere of the region where the wafer W is to be arranged in the processing container 2.
- the rectifying plate 24 is made of, for example, a metal material such as aluminum, an aluminum alloy, or stainless steel.
- the rectifying plate 24 is not an essential component in the microwave heat treatment apparatus 1 and may not be provided.
- the microwave heat treatment apparatus 1 further includes a plurality of radiation thermometers 26 that measure the surface temperature of the wafer W, and a temperature measurement unit 27 that is connected to the plurality of radiation thermometers 26.
- a plurality of radiation thermometers 26 is omitted except for the radiation thermometer 26 that measures the temperature at the center of the back surface of the wafer W via the hollow shaft 14.
- a space defined by the ceiling portion 11, the four side wall portions 12, and the rectifying plate 24 forms a microwave radiation space S in the processing container 2.
- microwaves are radiated from a plurality of microwave introduction ports 10 provided in the ceiling portion 11. Since the ceiling portion 11, the four side wall portions 12, and the rectifying plate 24 of the processing container 2 are all formed of a metal material, the microwave is reflected and scattered in the microwave radiation space S.
- FIG. 5 is an explanatory diagram showing a schematic configuration of a high-voltage power supply unit of the microwave introduction device 3.
- the microwave introduction device 3 is provided in the upper part of the processing container 2 and functions as a microwave introduction means for introducing electromagnetic waves (microwaves) into the processing container 2.
- the microwave introduction device 3 includes a plurality of microwave units 30 that introduce microwaves into the processing container 2, and a high-voltage power supply unit 40 that is connected to the plurality of microwave units 30. ing.
- Each microwave unit 30 includes a magnetron 31 that generates a microwave for processing the wafer W, a waveguide 32 that transmits the microwave generated in the magnetron 31 to the processing container 2, and the microwave introduction port 10.
- the transmission window 33 is fixed to the ceiling portion 11 so as to be closed.
- the magnetron 31 corresponds to the microwave source in the present invention.
- the magnetron 31 has an anode and a cathode (both not shown) to which a high voltage supplied by the high voltage power supply unit 40 is applied. Further, as the magnetron 31, those capable of oscillating microwaves of various frequencies can be used. For the microwave generated by the magnetron 31, an optimum frequency is selected for each processing of the object to be processed. For example, in the annealing process, it is preferably a microwave having a high frequency such as 2.45 GHz, 5.8 GHz, A microwave of 5.8 GHz is particularly preferable.
- the waveguide 32 has a rectangular cross section and a rectangular tube shape, and extends upward from the upper surface of the ceiling portion 11 of the processing container 2.
- the magnetron 31 is connected in the vicinity of the upper end portion of the waveguide 32.
- the lower end portion of the waveguide 32 is in contact with the upper surface of the transmission window 33.
- the microwave generated in the magnetron 31 is introduced into the processing container 2 through the waveguide 32 and the transmission window 33.
- the transmission window 33 is made of a dielectric material.
- a material of the transmission window 33 for example, quartz, ceramics, or the like can be used.
- a space between the transmission window 33 and the ceiling portion 11 is hermetically sealed by a seal member (not shown).
- the distance (gap G) from the lower surface of the transmission window 33 to the surface of the wafer W supported by the support pins 16 is, for example, 25 mm or more from the viewpoint of suppressing microwaves from being directly emitted to the wafer W.
- the microwave unit 30 further includes a circulator 34, a detector 35 and a tuner 36 provided in the middle of the waveguide 32, and a dummy load 37 connected to the circulator 34.
- the circulator 34, the detector 35, and the tuner 36 are provided in this order from the upper end side of the waveguide 32.
- the circulator 34 and the dummy load 37 constitute an isolator that separates the reflected wave from the processing container 2. That is, the circulator 34 guides the reflected wave from the processing container 2 to the dummy load 37, and the dummy load 37 converts the reflected wave guided by the circulator 34 into heat.
- the magnetrons 31 of the four microwave units 30 are unevenly arranged above the ceiling portion 11 so as to be close to each other. Accordingly, the shape of the waveguide 32 from the magnetron 31 to the circulator 34 in each microwave unit 30 is different. Thus, the maintenance of the plurality of magnetrons 31 can be easily performed by concentrating and arranging the plurality of magnetrons 31 at close positions.
- the detector 35 is for detecting a reflected wave from the processing container 2 in the waveguide 32.
- the detector 35 is configured by, for example, an impedance monitor, specifically, a standing wave monitor that detects an electric field of a standing wave in the waveguide 32.
- the standing wave monitor can be constituted by, for example, three pins protruding into the internal space of the waveguide 32.
- the detector 35 may be comprised by the directional coupler which can detect a traveling wave and a reflected wave.
- the tuner 36 has a function of matching the impedance between the magnetron 31 and the processing container 2. Impedance matching by the tuner 36 is performed based on the detection result of the reflected wave in the detector 35.
- the tuner 36 can be constituted by a conductor plate (not shown) provided so as to be able to be taken in and out of the internal space of the waveguide 32, for example. In this case, it is possible to adjust the impedance between the magnetron 31 and the processing container 2 by controlling the amount of electric power of the reflected wave by controlling the protruding amount of the conductor plate into the internal space of the waveguide 32. it can.
- the high voltage power supply unit 40 supplies a high voltage for generating a microwave to the magnetron 31.
- the high voltage power supply unit 40 includes an AC-DC conversion circuit 41 connected to a commercial power supply, a switching circuit 42 connected to the AC-DC conversion circuit 41, and operations of the switching circuit 42. It has a switching controller 43 to be controlled, a step-up transformer 44 connected to the switching circuit 42, and a rectifier circuit 45 connected to the step-up transformer 44.
- the magnetron 31 is connected to the step-up transformer 44 via the rectifier circuit 45.
- the AC-DC conversion circuit 41 is a circuit that rectifies alternating current (for example, three-phase 200 V alternating current) from a commercial power source and converts it into direct current having a predetermined waveform.
- the switching circuit 42 is a circuit that controls on / off of the direct current converted by the AC-DC conversion circuit 41. In the switching circuit 42, a phase shift type PWM (Pulse Width Modulation) control or PAM (Pulse Amplitude Modulation) control is performed by the switching controller 43 to generate a pulsed voltage waveform.
- the step-up transformer 44 boosts the voltage waveform output from the switching circuit 42 to a predetermined magnitude.
- the rectifier circuit 45 is a circuit that rectifies the voltage boosted by the step-up transformer 44 and supplies the rectified voltage to the magnetron 31.
- FIG. 6 shows a state in which the lower surface of the ceiling portion 11 of the processing container 2 shown in FIG. 1 is viewed from the inside of the processing container 2.
- the size and position of the wafer W are shown overlapping the ceiling portion 11 with a two-dot chain line.
- the symbol O represents the center of the wafer W, and also represents the center of the ceiling portion 11 in the present embodiment.
- the two lines passing through the symbol O represent the center line M connecting the midpoints of the opposing sides at the four sides serving as the boundary between the ceiling part 11 and the side wall part 12.
- FIG. 7 is an enlarged plan view showing one microwave introduction port 10.
- the plurality of microwave introduction ports there are four microwave introduction ports 10 arranged in a substantially cross shape on the ceiling portion 11 as a whole.
- the four microwave introduction ports 10 are distinguished from each other, they are denoted by reference numerals 10A, 10B, 10C, and 10D.
- a microwave unit 30 is connected to each microwave introduction port 10. That is, the number of microwave units 30 is four.
- a case where four microwave introduction ports 10A, 10B, 10C, and 10D are provided as a plurality of microwave introduction ports is taken as an example, but the number of microwave introduction ports 10 is arbitrary, for example, It is possible to provide the number in the range of 2 or more and 8 or less.
- the microwave introduction port 10 has a rectangular shape in plan view having a long side and a short side.
- the ratio (L 1 / L 2 ) between the length L 1 of the long side and the length L 2 of the short side of the microwave introduction port 10 is, for example, in the range of 2 to 100, and 4 or more. The range of 5 or more and 20 or less is more preferable.
- the ratio L 1 / L 2 is set to 2 or more, preferably 4 or more because the directivity of the microwave radiated from the microwave introduction port 10 into the processing container 2 is perpendicular to the long side of the microwave introduction port 10. This is for strengthening in a certain direction (a direction parallel to the short side).
- the microwave radiated from the microwave introduction port 10 into the processing container 2 is parallel to the long side of the microwave introduction port 10 (the direction perpendicular to the short side). ). Further, if the ratio L 1 / L 2 is less than 2, the directivity of the microwave becomes strong in the direction directly below the microwave introduction port 10, so that when the gap G is short, the microwave is directly applied to the wafer W. Is irradiated and local heating is likely to occur. On the other hand, when the ratio L 1 / L 2 exceeds 20, the directivity of the microwave toward the direction directly below the microwave introduction port 10 or the long side of the microwave introduction port 10 (direction perpendicular to the short side). However, the heating efficiency of the wafer W may be reduced.
- the size of each microwave introduction port 10 and the ratio L 1 / L 2 may be different for each microwave introduction port 10, but the viewpoint of improving the uniformity of the heat treatment for the wafer W and improving the controllability. Therefore, it is preferable that all the four microwave introduction ports 10 have the same size and shape.
- the ceiling portion 11, the four microwave introduction ports 10, their centers O P overlaps the one of the two concentric circles
- the position is changed in the direction from the center O of the ceiling portion 11 (wafer W) toward the outside.
- the positions of the four microwave introduction ports 10 in the radial direction of the wafer W are not the same, and the positions in the radial direction are changed so that a plurality of microwave radiation zones can be formed on the wafer W.
- the four microwave introduction ports 10 are arranged in two different positions so as to form an inner microwave radiation zone and an outer microwave radiation zone. ing.
- the microwave introduction ports 10A and 10C which are not adjacent to each other in the circumferential direction of the wafer W are centered on the virtual circumference of the radius R IN with respect to the center O of the wafer W. P is arranged so that it overlaps, and forms an inner microwave radiation zone. Also, not adjacent to one another in the circumferential direction of the wafer W microwave introduction ports 10B, 10D are in reference to the center O of the wafer W, so that the center O P of the microwave introduction port 10 overlaps on a virtual circle having a radius R OUT To form an outer microwave radiation zone.
- the centers of the two virtual concentric circles coincide with the center of the ceiling portion 11 (the center of the wafer W) O, and the size of the radius is R IN ⁇ R OUT .
- the microwave introduction ports 10 ⁇ / b> A and 10 ⁇ / b> C are arranged at the reference position of the microwave introduction port 10. All four microwave introduction ports 10 when in the reference position, the four center O P of the microwave introduction port 10 is located on the virtual circumference of all radii R IN.
- the direction perpendicular to the long side of each microwave introduction port 10 is the X axis, and the direction parallel to the long side of each microwave introduction port 10 is Y. Axis.
- the microwave introduction ports 10B and 10D are arranged by being translated from their reference positions (indicated by phantom lines in FIG. 6) by a distance R OUT -R IN in the Y-axis direction. It has become.
- the microwave introduction port 10 is arranged so as to be able to radiate microwaves in two regions of an inner microwave radiation zone and an outer microwave radiation zone.
- the radius of the wafer W is R
- the radius R IN indicating the reference position is preferably R / 5 ⁇ R IN ⁇ 3R / 5, provided that R IN ⁇ R OUT.
- the radius R OUT is preferably 2R / 5 ⁇ R IN ⁇ 5R / 5.
- the radius R IN is set within a range of 30 mm to 90 mm
- the radius R OUT is set within a range of 60 mm to 150 mm on condition that R IN ⁇ R OUT.
- the microwave introduction port 10 is divided into two regions of the inner microwave radiation zone and the outer microwave radiation zone, and microwaves are emitted from each of the two regions.
- the four microwave introduction ports 10 are provided so that the long side and the short side thereof are parallel to the inner wall surfaces of the four side wall portions 12A, 12B, 12C, and 12D, respectively.
- the long side of the microwave introduction port 10A is parallel to the side walls 12B and 12D
- the short side is parallel to the side walls 12A and 12C.
- Most of the microwave radiated from the microwave introduction port 10A travels in the X-axis direction (direction parallel to the short side) perpendicular to the long side and propagates.
- emitted from 10 A of microwave introduction ports is each reflected by the two side wall parts 12B and 12D.
- the directivity (electromagnetic field vector) of the generated reflected wave is the directivity (electromagnetic field vector) of the traveling wave.
- the four microwave introduction ports 10 having the ratio L 1 / L 2 of 2 or more, for example have long and short sides parallel to the inner wall surfaces of the four side wall portions 12A, 12B, 12C, and 12D. The direction of the microwave radiated from the microwave introduction port 10 and the reflected wave can be controlled.
- the four microwave introduction ports 10 having the ratio L 1 / L 2 of 2 or more, for example, are parallel when they are translated in the X-axis direction perpendicular to the respective long sides. It arrange
- the microwave introduction ports 10A to 10D are arranged so as to form a cross shape as a whole. That is, the two microwave introduction ports 10 adjacent to each other are arranged with an angle shifted by 90 degrees so that the central axes AC parallel to the direction of the long sides thereof are orthogonal to each other.
- microwave introduction port 10A Even when the microwave introduction port 10A is translated in the X-axis direction perpendicular to the long side, the microwave introduction port 10A does not overlap the other microwave introduction port 10C having the long side parallel to the long side. In other words, within the range of the long side of the microwave introduction port 10A, the microwave introduction port 10A and the two side walls 12B and 12D parallel to the long side of the microwave introduction port 10A Other microwave introduction ports 10 (microwave introduction ports 10C) whose long sides are in the same direction are not arranged. With such an arrangement, the microwaves radiated from the microwave introduction port 10 ⁇ / b> A with strong directivity in the X-axis direction perpendicular to the long side and the reflected waves enter the other microwave introduction ports 10. To avoid doing as much as possible.
- microwave introduction port 10 in the same direction is interposed between the microwave introduction port 10A and the two parallel side walls 12B and 12D within the length of the long side, the microwave Therefore, the microwave and the reflected wave easily enter the microwave introduction port 10 in the same direction, and the power loss increases.
- another microwave introduction port 10 in the same direction as the microwave introduction port 10A exists between the two parallel side wall portions 12B and 12D. Otherwise, the microwave radiated from the microwave introduction port 10 ⁇ / b> A and the reflected wave thereof are suppressed from entering the other microwave introduction port 10. Therefore, it is possible to suppress power loss caused by the microwave radiated from the microwave introduction port 10 ⁇ / b> A and the reflected wave thereof entering the other microwave introduction port 10.
- the microwaves radiated from the microwave introduction port 10A and the reflected waves thereof are adjacent to the microwave introduction ports 10B and 10D arranged at 90 degrees with respect to the microwave introduction port 10A. Since the excitation direction is different from, almost no incident on the microwave introduction ports 10B and 10D. Therefore, when the microwave introduction port 10A is translated in the X-axis direction perpendicular to the long side, it may overlap with the microwave introduction ports 10B and 10D having different long sides.
- the two microwave introduction ports 10 that are not adjacent to each other have their central axes AC on the same straight line. It is arranged so as not to overlap.
- the center axis AC of the microwave introduction port 10C that is not adjacent to the microwave introduction port 10A does not overlap with the center axis AC of the microwave introduction port 10A even if the direction is the same. The position is shifted.
- the two microwave introduction ports 10 that are not adjacent to each other are arranged so that their central axes AC do not overlap each other.
- each microwave introduction port 10 may be arranged at a position far away from the center line M, for example, at a position where the long side of each microwave introduction port 10 is close to the side wall portion 12. From the viewpoint of achieving uniform introduction of microwaves into the processing container 2, each microwave introduction port 10 is preferably arranged close to the center line M, and as shown in FIG.
- each microwave introduction port 10 is arranged so as to overlap the center line M.
- the center axes AC of the two microwave introduction ports 10 that are not adjacent to each other may overlap each other.
- the center axis AC and the center line M may coincide with each other.
- microwave introduction ports 10 ⁇ / b> A, 10 ⁇ / b> B, 10 ⁇ / b> C, and 10 ⁇ / b> D are arranged so that the above relationship is established between the other microwave introduction ports 10 and the side wall portions 12.
- FIG. 6 shows an arrangement example in which the microwave introduction ports 10B and 10D are translated from the reference position in the Y-axis direction.
- the uniformity of heating in the radial direction of the wafer W can be improved together with the uniformity of heating in the circumferential direction of the wafer W.
- the mobile although not shown, the microwave introduction port 10B, a 10D, as their centers O P overlaps on a virtual circle having a radius R OUT, from the reference position in both the X and Y directions You may let them.
- FIG. 6 and 8 show examples of arrangements in which the microwave introduction ports 10B and 10D that are not adjacent to each other in the circumferential direction of the wafer W are translated from the reference position, but are adjacent to each other in the circumferential direction of the wafer W.
- the two microwave introduction ports 10 may be moved together.
- FIG. 9 shows that the microwave introduction ports 10C and 10D that are adjacent to each other in the circumferential direction of the wafer W are separated from their reference positions (indicated by phantom lines in FIG. 9) in the Y axis direction by a distance R OUT -R IN by translation, an example in which their center O P is arranged to overlap the virtual circumference of radius R OUT. Also in this case, as in the case of FIG.
- the moving direction of the microwave introduction port 10 is not limited to the Y-axis direction, and may be the X-axis direction or both the X-axis and Y-axis directions.
- the four microwave introduction ports 10 can be divided into two groups, and microwaves can be radiated in two regions of an inner microwave radiation zone and an outer microwave radiation zone.
- the microwave radiation zone is not limited to two inside and outside.
- the four microwave introduction ports 10 may be arranged on four virtual concentric circles each having a different radius so that four microwave radiation zones can be formed. More specifically, for example, as shown in FIG. 10, the four microwave introduction ports 10A to 10D are connected to the outside from the center O of the wafer W (center of the ceiling portion 11) O from the center O. It can arrange
- the microwave introduction port 10A is arranged so that its center O P on the circumference of a virtual overlap having a radius R 1.
- the microwave introduction port 10B is arranged so that its center O P on the circumference of a virtual overlap having a radius R 2.
- the microwave introduction port 10C are arranged such that the center O P on the circumference of a virtual overlap with a radius R 3.
- the microwave introduction port 10D are arranged such that the center O P on the circumference of a virtual overlap having a radius R 4. Also in this case, as in the case of FIG. 6, when the wafer W is rotated horizontally, the uniformity of heating in the radial direction of the wafer W can be improved together with the uniformity of heating in the circumferential direction of the wafer W.
- the moving direction of the microwave introduction port 10 is not limited to the Y-axis direction, and may be the X-axis direction or both the X-axis and Y-axis directions. Further, in FIG. 10, four microwave introduction port 10 center O P positions microwave introduction ports 10A, 10B, 10C, are disposed so as to be greater in the clockwise radially outward in the order of 10D, A random arrangement may be employed without taking such an order.
- all four microwave introduction ports 10 are arranged directly above the wafer W, but uniform heating in the plane of the wafer W can be realized. If so, the positions of the wafer W and the microwave introduction port 10 do not necessarily overlap.
- FIGS. 11 to 13 show the procedure of the opening / closing operation in the chamber opening / closing mechanism.
- the portion including the microwave introduction device 3 and the ceiling portion 11 of the processing container 2 in the microwave heat treatment apparatus 1 is simplified as a box shape as the upper unit 101 and illustrated.
- the chamber opening / closing mechanism of the present embodiment opens the inside of the processing container 2 by sliding the upper unit 101 on the rail.
- FIG. 11 shows three microwave heat treatment apparatuses 1 and a rail mechanism 102 for pulling out the upper unit 101 in each microwave heat treatment apparatus 1.
- the rail mechanism 102 includes a grid-like rail portion 102a.
- the rail portion 102a is in an upright state when not in use, and is tiltably provided so that it can be tilted to the horizontal state and used over the microwave heat treatment apparatus 1 when in use.
- the upper unit 101 is configured to be a part of the upper unit 101, and the ceiling unit 11 that functions as a lid is pushed up by a biasing force of a biasing means such as a spring (not shown).
- FIG. 12 shows a state in which the upper unit 101 is pulled out by sliding on the rail portion 102a.
- FIG. 13 shows a state in which the upper unit 101 is further moved to the front of the adjacent microwave heat treatment apparatus 1 by changing the sliding direction to a right angle.
- the processing container 2 of the microwave heat treatment apparatus 1 can be easily opened, and maintenance of the inside of the processing container 2 and the microwave introduction apparatus 3 is facilitated.
- the upper unit 101 can be easily exchanged between the plurality of microwave heat treatment apparatuses 1 sharing the rail mechanism 102 via the rail mechanism 102.
- FIG. 14 is an explanatory diagram showing the configuration of the control unit 8 shown in FIG.
- the control unit 8 includes a process controller 81 including a CPU, and a user interface 82 and a storage unit 83 connected to the process controller 81.
- the process controller 81 is a component related to process conditions such as temperature, pressure, gas flow rate, and microwave output (for example, the microwave introduction device 3, the support device 4, and the gas supply device). 5a, the exhaust device 6, the temperature measuring unit 27 and the like).
- the user interface 82 includes a keyboard and a touch panel on which a process manager manages command input for managing the microwave heat treatment apparatus 1, a display for visualizing and displaying the operation status of the microwave heat treatment apparatus 1, and the like. is doing.
- the storage unit 83 stores a control program (software) for realizing various processes executed by the microwave heating apparatus 1 under the control of the process controller 81, a recipe in which process condition data, and the like are recorded. ing.
- the process controller 81 calls and executes an arbitrary control program or recipe from the storage unit 83 as necessary, such as an instruction from the user interface 82. As a result, a desired process is performed in the processing container 2 of the microwave heating apparatus 1 under the control of the process controller 81.
- control program and recipe described above can be stored in a computer-readable storage medium such as a CD-ROM, hard disk, flexible disk, flash memory, DVD, or Blu-ray disk. Also, the above recipe can be transmitted from other devices as needed via, for example, a dedicated line and used online.
- a processing procedure in the microwave heat treatment apparatus 1 when performing an annealing process on the wafer W will be described.
- a command is input from the user interface 82 to the process controller 81 so as to perform an annealing process in the microwave heating apparatus 1.
- the process controller 81 receives this command, and reads a recipe stored in the storage unit 83 or a computer-readable storage medium.
- each end device for example, the microwave introduction device 3, the support device 4, the gas supply device 5a, the exhaust gas
- a control signal is sent to the apparatus 6 or the like.
- the gate valve GV is opened, and the wafer W is loaded into the processing container 2 through the gate valve GV and the loading / unloading port 12a by a transfer device (not shown) and mounted on the plurality of support pins 16. Placed.
- the plurality of support pins 16 are moved up and down together with the shaft 14 and the arm unit 15 by driving the lifting drive unit 18, and the wafer W is set at a predetermined height position (initial height position).
- the rotation drive unit 17 By driving the rotation drive unit 17 at this height position, the wafer W is rotated in the horizontal direction at a predetermined speed.
- the rotation of the wafer W may not be continuous but discontinuous.
- the gate valve GV is closed, and if necessary, the inside of the processing container 2 is evacuated and exhausted by the exhaust device 6.
- a processing gas and a cooling gas having a predetermined flow rate are introduced into the processing container 2 by the gas supply device 5a.
- the internal space of the processing container 2 is adjusted to a predetermined pressure by adjusting the
- a voltage is applied to the magnetron 31 from the high voltage power supply unit 40 to generate a microwave.
- the microwave generated in the magnetron 31 propagates through the waveguide 32, then passes through the transmission window 33, and is introduced into the space above the rotating wafer W in the processing chamber 2.
- microwaves are sequentially generated in the plurality of magnetrons 31, and the microwaves are alternately introduced into the processing container 2 from the respective microwave introduction ports 10. Note that a plurality of microwaves may be simultaneously generated in the plurality of magnetrons 31 and the microwaves may be simultaneously introduced into the processing container 2 from the respective microwave introduction ports 10.
- the microwave introduced into the processing container 2 is irradiated onto the surface of the rotating wafer W, and the wafer W is rapidly heated by electromagnetic wave heating such as Joule heating, magnetic heating, induction heating or the like.
- electromagnetic wave heating such as Joule heating, magnetic heating, induction heating or the like.
- the wafer W is annealed.
- the height position of the wafer W can be displaced in multiple stages. For example, the wafer W is set at the initial height position (first height position) from the start of the annealing process to a certain period. Next, by driving the lift drive unit 18, the wafer W can be set from the initial height position to a second height position different from the initial height position, and the remaining annealing process can be performed.
- the height position is not limited to two stages, but can be set to three or more stages, and the switching of the height positions of two or more stages can be repeatedly performed.
- the bias of the microwave irradiated to the wafer W is reduced, the reflection of the microwave is suppressed, and the temperature rising rate and the maximum temperature reached are increased.
- the heating efficiency can be improved and the heating temperature in the wafer W surface can be made uniform.
- the microwave heat treatment apparatus 1 can be preferably used for the purpose of, for example, annealing for activating doping atoms implanted in the diffusion layer in a semiconductor device manufacturing process, for example.
- the annealing process is performed while rotating the wafer W supported by the plurality of support pins 16 at a predetermined speed by driving the rotation driving unit 17.
- the microwave radiation in the circumferential direction is made uniform in the plane of the wafer W.
- the annealing can be made uniform in the circumferential direction in the plane of the wafer W by the rotation.
- the microwave irradiation in the radial direction within the surface of the wafer W in order to make uniform the microwave irradiation in the radial direction within the surface of the wafer W, as shown in FIG. are arranged so as to form two or more microwave radiation zones.
- the annealing process when performing the annealing process while horizontally rotating the wafer W, it is possible to improve the uniformity of heating in the radial direction of the wafer W as well as the uniformity of heating in the circumferential direction of the wafer W. Therefore, by combining the rotation of the wafer W and the arrangement of the microwave introduction port 10, the annealing process can be made uniform in the plane of the wafer W.
- the reference position of the microwave introduction port 10 to be simulated and the moving direction therefrom are projected onto the position of the wafer W.
- the reference position of the microwave introduction port 10 is arranged such that the centers of the four microwave introduction ports 10 overlap on a virtual circumference having a radius of 55 mm from the center O of the wafer W.
- FIG. 15 shows a simulation result when the position of the center of two microwave introduction ports 10 that are not adjacent to each other is shifted from 0 to 120 mm in units of 10 mm from the reference position arrangement to the outside in the X-axis direction.
- FIG. 16 shows a simulation result when the position of the center of two microwave introduction ports 10 that are not adjacent to each other is shifted from the reference position to the outside in the Y-axis direction by 0 to 100 mm in units of 10 mm. .
- the processing container had a shape having a square cylindrical side wall portion 12.
- the four microwave introduction ports 10 are provided such that the long side and the short side thereof are parallel to the inner wall surfaces of the four side wall portions 12.
- the length L 1 of the long side of the microwave introduction port 10 is the ratio of the short side length L 2 (L 1 / L 2 ) is four.
- the other microwave introduction ports having parallel long sides are arranged. 10 so as not to overlap.
- silicon doped with arsenic or the like as an impurity was assumed.
- examination was performed under the condition of introducing microwaves from 500 W to 3000 W from one microwave introduction port indicated by black painting.
- the absorbed power of the wafer W can be calculated from the scattering parameter (S parameter). Assuming that the input power is Pin and the total power absorbed by the wafer W is Pw, the total power Pw can be obtained by the following equation (1).
- S11, S21, S31, and S41 are S parameters of the four microwave introduction ports 10, and the black microwave introduction port 10 corresponds to port 1.
- the distribution of power absorption in the plane of the wafer W was calculated by obtaining the volume loss density of electromagnetic waves using a pointing vector in the plane of the wafer W.
- the total power Pw absorbed by the wafer W can be obtained by the following equation (2).
- the total power absorbed by the wafer W is, for example, a position moved 80 mm outward. Since Pw is large and the power absorption distribution in the plane of the wafer W is uniform, it is considered that the arrangement is optimal for forming the outer microwave radiation zone. Therefore, in the case of the simulation conditions, it is preferable to shift the two microwave introduction ports 10 that are not adjacent to each other by a distance in the range of, for example, 10 mm or more and 80 mm or less outward from the reference position in the X-axis direction. Further, from the simulation results shown in FIG.
- the wafer W absorbs the position moved, for example, 50 mm outward. Since the total power Pw is large and the power absorption distribution in the plane of the wafer W is uniform, it is considered to be an optimal arrangement for forming the outer microwave radiation zone. Therefore, in the case of the simulation conditions, it is preferable to shift the two microwave introduction ports 10 that are not adjacent to each other by a distance within a range of, for example, 10 mm or more and 70 mm or less outward from the reference position in the Y-axis direction.
- FIG. 17 is an explanatory diagram schematically showing the configuration of the microwave heat treatment apparatus assumed in the simulation.
- FIG. 17 schematically shows the positional relationship between the shape of the side wall part 12 (only the position of the inner wall surface is shown) and the wafer W when the corners of the connecting portions of the adjacent side wall parts 12 are rounded. ing.
- the positions of four microwave introduction ports 10A, 10B, 10C, and 10D provided on the ceiling 11 (not shown) are projected onto the wafer W. As can be seen from FIG.
- the microwave was set to be introduced from the microwave introduction port 10A.
- S11 is a scattering parameter of the microwaves and reflected microwaves at the microwave introduction port 10A
- S31 is a scattering parameter of the microwaves radiated from the microwave introduction port 10A and reflected to the microwave introduction port 10C. .
- FIG. 18 shows the simulation result.
- the radius of curvature RC when the radius of curvature RC is in the range of 15 mm or more and 16 mm or less, both S11 and S31 have little fluctuation and a relatively low value. Therefore, from the viewpoint of suppressing the reflected wave incident on the microwave introduction port 10 and improving the utilization efficiency of the microwave power, the rounding of the corner portion C of the connection portion of the adjacent side wall portions 12 of the processing container 2 is performed with a radius of curvature. It was confirmed that RC is preferably applied within a range of 15 mm to 16 mm.
- annealing is performed by arranging the microwave introduction port 10 so as to form the inner microwave radiation zone and the outer microwave radiation zone.
- the in-plane uniformity of processing is improved.
- the microwave forms a standing wave
- the positions of the antinodes and nodes of the standing wave are fixed. Since the electromagnetic field is locally strong at the position of the antinode of the standing wave, and the electromagnetic field is locally weak at the position of the node, it is only necessary to form the two microwave radiation zones in the radial direction of the wafer W. Non-uniformity may occur in the annealing process.
- the elevation drive unit 18 changes the height position of the wafer W.
- changing the height position of the wafer W supported by the support pins 16 extends from the lower surface of the transmission window 33 of the microwave introduction port 10 to the surface of the wafer W supported by the support pins 16. This is nothing but changing the distance (gap G). If the gap G is changed, even if a standing wave is formed in the processing chamber 2, the relative positional relationship between the standing wave and the wafer W changes. As a result, the microwave in the radial direction of the wafer W changes. The radiation distribution can be changed.
- FIG. 19 shows the measurement of the temperature change in the surface of the wafer W when annealing is performed by changing the height position of the 300 mm diameter wafer W supported on the support pins 16 using the microwave heat treatment apparatus 1. It is a graph which shows the experimental result which carried out. In this experiment, three points, point 1 (0 mm in the radial direction from the center O of the wafer W), point 2 (75 mm) and point 3 (145 mm) were used as measurement points. The annealing treatment was performed for 5 minutes at a microwave frequency of 5.8 GHz, a microwave power of 2000 W, a pressure of 90 kPa, and a nitrogen gas flow rate of 10 slm (L / min). The horizontal axis of FIG.
- FIG. 19 indicates the height position of the wafer W by the height (mm) from the upper surface of the current plate 24.
- the height from the upper surface of the rectifying plate 24 to the lower surface of the transmission window 33 that closes the microwave introduction port 10 is 67 mm.
- the vertical axis in FIG. 19 represents the ultimate temperature at each measurement point on the wafer W. From FIG. 19, it can be seen that the tendency of the heating temperature depending on the height position of the wafer W is greatly different between the point 1 and the points 2 and 3. For example, the temperature difference at three measurement points in the surface of the wafer W is about 2 to 3 ° C.
- FIG. 20 is a graph showing a measurement result of the sheet resistance value when the microwave heat treatment apparatus 1 is used to activate and activate the silicon wafer doped with arsenic as an impurity by changing the height position. is there.
- the annealing conditions were the same as in Experiment 1.
- the height position of the wafer W is set to 21.2 mm, 27.0 mm, and 31.2 mm from the upper surface of the rectifying plate 24, the processing for 3 minutes at the height position of 27.0 mm and the height position are performed.
- the average and standard deviation of the sheet resistance value ( ⁇ s) are shown for the case where the treatment for 2 minutes at 31.2 mm is combined.
- FIG. 20 is a graph showing a measurement result of the sheet resistance value when the microwave heat treatment apparatus 1 is used to activate and activate the silicon wafer doped with arsenic as an impurity by changing the height position. is there.
- the annealing conditions were the same as in Experiment 1.
- the height position of the wafer W is set to 2
- the height position of the wafer W When the height position of the wafer W is changed from 27.0 mm (3 minutes) to 31.2 mm (2 minutes) during the annealing process, the height position is 27.0 mm or 31.2 mm. Compared with the above, the uniformity of the sheet resistance in the plane of the wafer W is remarkably improved. This is thought to be because, as a result of combining two different height positions, the non-uniformity of the annealing process at each height position was offset, and the sheet resistance distribution in the plane of the wafer W was eliminated. It is done.
- Example 3 Using the microwave heat treatment apparatus 1, the temperature change and the microwave reflection amount in the surface of the wafer W when annealing is performed by changing the height position of the 300 mm diameter wafer W supported on the support pins 16. Measured. The amount of microwave reflection was measured by the detector 35 (hereinafter the same). In this experiment, the annealing treatment was performed for 2 minutes at a microwave frequency of 5.8 GHz, a microwave power of 3900 W, a pressure of 100 kPa, and a nitrogen gas flow rate of 5 slm (L / min).
- the experiment was performed by changing the height Z from the upper surface of the bottom wall 13 of the processing vessel 2 to the back surface of the wafer W (hereinafter, sometimes referred to as “wafer height”).
- Condition C is that the wafer height Z is switched from 34 mm to 36 mm during the annealing process.
- the switching timing of the wafer height Z under the condition C was set at a point when about 25 seconds had elapsed from the start of the annealing process.
- FIG. 21 shows the relationship between the temperature of the wafer W and time in the annealing process under the conditions A and B
- FIG. 22 shows the relationship between the microwave reflection amount and time.
- FIG. 23 shows the relationship between the temperature of the wafer W and time under the condition C
- FIG. 24 shows the relationship between the microwave reflection amount and time.
- the results of Condition A and Condition B are also shown for reference.
- condition A 34 mm
- condition B 36 mm
- condition B has a higher maximum temperature than condition A
- the rate of temperature increase is equivalent to condition A
- the maximum temperature reached is equivalent to condition B. That is, by switching the wafer height Z from 34 mm to 36 mm in the middle of the annealing process, both a large temperature rise rate equivalent to condition A and a high ultimate temperature equivalent to condition B are obtained under condition C.
- condition B 36 mm
- FIG. 24 it is possible to reduce the microwave reflection amount under the condition C in which the wafer height Z is changed during the annealing process.
- FIG. 25 shows the experimental results of measuring the maximum temperature of the wafer W when the microwave heat treatment apparatus 1 is used and the annealing process is performed by changing the height position of the 300 mm diameter wafer W supported on the support pins 16. It is a graph to show. The experiment was carried out by changing the wafer height Z. The annealing treatment was performed for 5 minutes at a microwave frequency of 5.8 GHz, a microwave power of 3900 W, a pressure of 100 kPa, and a nitrogen gas flow rate of 5 slm (L / min). From FIG. 25, it was confirmed that by changing the wafer height Z, the heating temperature (maximum temperature reached) of the wafer W also changed, and the wafer height Z affected the heating efficiency.
- FIG. 26 shows the amount of microwave reflection when the microwave heat treatment apparatus 1 is used and the annealing process is performed by changing the height position of the 300 mm diameter wafer W supported on the support pins 16 under the same conditions as in Experiment 4. It is a graph which shows the measured experimental result. From FIG. 26, it was confirmed that the amount of reflected microwaves was changed by changing the wafer height Z, and that the wafer height Z affected the microwave absorption efficiency.
- the height position of the wafer W greatly affects the amount of microwave reflection in the annealing process, the temperature distribution in the wafer W surface, the sheet resistance distribution, the temperature rise rate, and the maximum temperature reached. Became clear.
- the temperature distribution and sheet resistance within the wafer W surface can be made uniform, and the reflection of microwaves can be suppressed, and the rate of temperature increase and maximum reach can be achieved. It was confirmed that the heating efficiency can be improved by increasing the temperature.
- the annealing process is performed while rotating the wafer W at a predetermined speed in the horizontal direction, so that the wafer W is circumferentially aligned in the plane.
- the microwave radiation is made uniform.
- the four microwave introduction ports 10, their centers O P is arranged to overlap in either of the two virtual concentric, by forming the two microwave radiation zone, the wafer W horizontally
- the uniformity of heating in the radial direction of the wafer W can be enhanced along with the uniformity of heating in the circumferential direction of the wafer W.
- the uniformity of the processing within the wafer W plane is further improved by changing the height position of the wafer W during the annealing process. Can do. Therefore, according to the microwave heat treatment apparatus and the treatment method of the present embodiment, it is possible to perform uniform heat treatment on the wafer W.
- a combination of the characteristic shape and arrangement of the microwave introduction port 10 and the shape of the side wall portion 12 of the processing container 2 radiates from one microwave introduction port 10 into the processing container 2.
- the microwaves are prevented from entering the other microwave introduction port 10 as much as possible.
- the radiation directivity of the microwaves in a ratio (L 1 / L 2) microwave introduction port 10 is 4 or more and the length L 1 of the long side and the length L 2 of the short sides This is shown schematically.
- FIG. 27 shows a state where the microwave introduction port 10 is viewed from below the ceiling portion 11 (not shown).
- FIG. 28 shows the microwave introduction port 10 in a cross section of the ceiling portion 11 in the short side direction.
- the arrow indicates the electromagnetic field vector 100 radiated from the microwave introduction port 10, and the longer the arrow, the stronger the directivity of the microwave.
- the X axis and the Y axis are both directions parallel to the lower surface of the ceiling portion 11
- the X axis is a direction perpendicular to the long side of the microwave introduction port 10
- the Y axis is A direction parallel to the long side of the microwave introduction port 10 is meant
- a Z-axis means a direction perpendicular to the bottom surface of the ceiling portion 11.
- microwave introduction ports 10 having a long side and a short side and having a rectangular shape in plan view are arranged on the ceiling portion 11.
- Each microwave introduction ports 10 used in this embodiment the ratio L 1 / L 2, e.g. 2 or more, but is preferably 4 or more.
- the microwave radiation directivity is dominant along the X axis (in the direction perpendicular to the long side (direction parallel to the short side)). Therefore, the microwave radiated from a certain microwave introduction port 10 propagates mainly along the ceiling portion 11 of the processing container 2 and is reflected using the inner wall surface of the side wall portion 12 parallel to the long side as a reflection surface. .
- the inner wall surfaces of the four side wall portions 12 of the processing container 2 are provided in directions orthogonal to each other, and the four microwave introduction ports 10 have long sides and short sides, respectively. Is provided to be parallel to the inner wall surfaces of the four side wall portions 12A, 12B, 12C, and 12D. Therefore, the directions of the reflected waves generated by the four side wall portions 12A, 12B, 12C, and 12D are approximately 180 degrees opposite to the traveling waves, and the reflected waves rarely go to the other microwave introduction ports 10.
- the microwave heat treatment apparatus 1 of the present embodiment can perform uniform processing on the wafer W.
- the micro wave emitted from the microwave introduction port 10A The wave also travels in a direction (Y-axis direction) parallel to the long side of the microwave introduction port 10A, and the possibility of entering the microwave introduction port 10C increases.
- the radiated microwave has a strong directivity in the downward direction (that is, the direction toward the wafer W along the Z axis) Since the rate of direct microwave irradiation to the wafer W directly below the microwave introduction port 10 is increased, when the gap G is reduced by raising the height position of the wafer W, the local area within the wafer W surface is increased. Heating is likely to occur.
- the four microwave introduction ports 10 having the ratio L 1 / L 2 of 2 or more are, for example, the long sides of the two microwave introduction ports 10 adjacent to each other.
- the angles are shifted by 90 degrees so that the central axes AC parallel to the direction are perpendicular to each other.
- Each microwave introduction port 10 is arranged so as not to overlap with the other microwave introduction ports 10 having parallel long sides when translated in a direction perpendicular to the respective long sides. For this reason, in the direction perpendicular to the long side of the microwave introduction port 10, it is possible to prevent the microwave and the reflected wave from entering between the microwave introduction ports 10 having the same microwave excitation direction.
- microwave introduction ports 10 that are not adjacent to each other among the four microwave introduction ports 10 are arranged so that the central axes AC do not overlap on the same straight line.
- the microwave and the reflected wave enter each other between the microwave introduction ports 10 having the same microwave excitation direction in the direction perpendicular to the short side of the microwave introduction port 10. Almost nothing.
- the shape of the microwave introduction port 10, particularly the ratio L 1 / L 2 , the microwave radiation directivity resulting from the shape, and the side wall 12 of the processing vessel 2 are further reduced.
- the microwave introduction port 10 is arranged in consideration of the shape. Therefore, in the present embodiment, it is possible to prevent the microwave introduced from one microwave introduction port 10 from entering the other microwave introduction port 10 as much as possible, and to suppress the power loss to the minimum. Yes.
- the rotation of the wafer W and the adjustment of the height position are adjusted to the characteristic shape and arrangement of the microwave introduction port 10 and the shape of the side wall portion 12. Is combined. With such a combination, a microwave having radiation directivity as shown in FIGS. 27 and 28 and a reflected wave traveling in the opposite direction can be efficiently used, and only in the circumferential direction within the plane of the wafer W. In addition, the annealing process can be performed with excellent uniformity in the radial direction.
- FIG. 29 is a cross-sectional view showing a schematic configuration of a microwave heat treatment apparatus 1A according to the present embodiment.
- FIG. 30 is an explanatory diagram showing a state in which the microwave introduction adapter 50 as an adapter member having a waveguide for transmitting microwaves is attached to the ceiling portion 11 in the microwave heat treatment apparatus 1A.
- FIG. 31 is an explanatory diagram showing a state of grooves formed in the microwave introduction adapter 50.
- the microwave heat treatment apparatus 1A is an apparatus that performs an annealing process by irradiating a microwave on, for example, a semiconductor wafer W for manufacturing a semiconductor device with a plurality of continuous operations.
- differences from the microwave heat treatment apparatus 1 of the first embodiment will be mainly described.
- the microwave heat treatment apparatus 1A shown in FIGS. 29 to 31 the first embodiment will be described.
- the same components as those of the microwave heat treatment apparatus 1 are denoted by the same reference numerals and description thereof is omitted.
- the microwave heat treatment apparatus 1 ⁇ / b> A supports a processing container 2 that accommodates a wafer W that is an object to be processed, a microwave introduction apparatus 3 ⁇ / b> A that introduces microwaves into the processing container 2, and the wafer W in the processing container 2.
- a support device 4 a gas supply mechanism 5 for supplying gas into the processing vessel 2, an exhaust device 6 for evacuating the inside of the processing vessel 2, and a control unit 8 for controlling each component of the microwave heat treatment device 1A And.
- the microwave introduction device 3 ⁇ / b> A is provided on the upper part of the processing container 2 and functions as microwave introduction means for introducing electromagnetic waves (microwaves) into the processing container 2.
- the microwave introduction device 3A includes a plurality of microwave units 30 that introduce microwaves into the processing container 2, a high-voltage power supply unit 40 that is connected to the plurality of microwave units 30, and a conductor.
- a microwave introduction adapter 50 is connected between the wave tube 32 and the microwave introduction port 10 so that microwaves can be transmitted.
- each microwave unit 30 includes a magnetron 31 that generates a microwave for processing the wafer W, a waveguide 32 that transmits the microwave generated in the magnetron 31 to the processing container 2, and the microwave introduction port 10.
- the transmission window 33 is fixed to the ceiling portion 11 so as to be closed.
- the microwave unit 30 further includes a circulator 34, a detector 35 and a tuner 36 provided in the middle of the waveguide 32, and a dummy load 37 connected to the circulator 34.
- the microwave introduction adapter 50 is constituted by a collection of a plurality of metal block bodies. That is, the microwave introduction adapter 50 has one large central block 51 disposed in the center and four auxiliary blocks 52A, 52B, 52C, 52D disposed adjacent to the periphery of the central block 51. ing. These block bodies are fixed to the ceiling portion 11 by fixing means such as bolts, for example.
- the center block 51 has a plurality of grooves 51a on its side surface.
- the groove 51 a is formed on the side of the central block 51 so as to form a substantially S shape from the upper surface to the lower surface of the central block 51.
- the number of grooves 51a corresponds to the number of microwave units 30, and is four in the present embodiment.
- the auxiliary blocks 52A to 52D constitute a microwave introduction adapter 50 in combination with the central block 51.
- the auxiliary blocks 52A to 52D are arranged corresponding to the grooves 51a of the central block 51. That is, the auxiliary blocks 52A to 52D are fixed in close contact with the side surface where the groove 51a of the central block 51 is formed. Then, the open portion of the groove 51a on the side surface of the central block 51 is closed by the auxiliary blocks 52A to 52D, whereby a substantially S-shaped waveguide 53 capable of transmitting microwaves is formed. That is, the waveguide 53 is formed by the three walls in the groove 51a and one wall of each of the auxiliary blocks 52A to 52D.
- the waveguide 53 is a through opening extending from the upper surface to the lower surface of the microwave introduction adapter 50.
- the upper end of the waveguide 53 is connected to the lower end of the waveguide 32, and the lower end of the waveguide 53 is connected to the transmission window 33 that closes the microwave introduction port 10.
- the waveguide 32 is aligned with the waveguide 53 and fixed to the microwave introduction adapter 50 by a fixing means such as a bolt.
- the reason why the waveguide 53 is S-shaped is to shift the positions of the waveguide 32 and the microwave introduction port 10 in the horizontal direction while minimizing the transmission loss of the microwave.
- each microwave unit 30 and the microwave introduction port 10 can be greatly increased.
- each component other than the transmission windows 33 in the four microwave units 30 must be disposed on the upper part of the processing container 2.
- the microwave introduction port 10 is caused by interference between adjacent microwave units 30. May be constrained.
- the microwave introduction adapter 50 used in the present embodiment is configured so that the relative positions of the waveguide 32 and the microwave introduction port 10 are mutually fixed by the S-shaped waveguide 53 from the fixed arrangement in which the waveguides 32 and the microwave introduction port 10 overlap each other. It can be flexibly adjusted to an arrangement that does not overlap vertically or only partially overlap (that is, an arrangement shifted laterally). Therefore, by using the microwave introduction adapter 50, the microwave introduction port 10 can be provided at any position on the ceiling portion 11 without being restricted by the installation space of the microwave unit 30. For example, when the four microwave introduction ports 10 are concentrated in the vicinity of the center of the ceiling portion 11, interference between the microwave units 30 can be avoided by using the microwave introduction adapter 50.
- the microwave heat treatment apparatus 1A of the present embodiment by using the microwave introduction adapter 50, the degree of freedom of arrangement of the microwave introduction port 10 is greatly improved. Therefore, according to the microwave heat treatment apparatus 1A of the present embodiment, it is possible to improve the uniformity of heating within the surface of the wafer W and perform uniform heat treatment on the wafer W.
- the microwave introduction adapter 50 can use block bodies of various sizes and shapes depending on the arrangement and number of the microwave introduction ports 10.
- the waveguide may be formed by combining two small block bodies such as the auxiliary blocks 52A to 52D without providing the central block 51.
- the microwave introduction adapter 50 is provided in common to each microwave unit 30, but the microwave introduction adapter 50 may be individually provided for each microwave unit 30. Further, the microwave introduction adapter 50 may be included as a component of the microwave unit 30.
- the microwave heat treatment apparatus of the present invention is not limited to a case where a semiconductor wafer is used as an object to be processed.
- a microwave heat treatment apparatus using a substrate for a solar cell panel or a substrate for a flat panel display as an object to be processed is Applicable.
- the number of microwave units 30 (the number of magnetrons 31) and the number of microwaves simultaneously introduced into the processing container 2 are not limited to the numbers described in the above embodiment.
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Abstract
Description
[第1の実施の形態]
まず、図1を参照して、本発明の第1の実施の形態に係るマイクロ波加熱処理装置の概略の構成について説明する。図1は、本実施の形態に係るマイクロ波加熱処理装置の概略の構成を示す断面図である。本実施の形態に係るマイクロ波加熱処理装置1は、連続する複数の動作を伴って、例えば半導体デバイス製造用の半導体ウエハ(以下、単に「ウエハ」と記す。)Wに対して、マイクロ波を照射してアニール処理を施す装置である。
処理容器2は、金属材料によって形成されている。処理容器2を形成する材料としては、例えば、アルミニウム、アルミニウム合金、ステンレス等が用いられる。マイクロ波導入装置3は、処理容器2の上部に設けられ、処理容器2内に電磁波(マイクロ波)を導入するマイクロ波導入手段として機能する。マイクロ波導入装置3の構成については、後で詳しく説明する。
支持装置4は、処理容器2の底部13のほぼ中央を貫通して処理容器2の外部まで延びる中空管状のシャフト14と、シャフト14の上端付近からほぼ水平方向に設けられた複数(例えば3つ)のアーム部15と、各アーム部15のそれぞれに着脱可能に装着された、複数の支持ピン16と、を有している。さらに、支持装置4は、シャフト14を回転させる回転駆動部17と、シャフト14を上下に変位させる昇降駆動部18と、シャフト14を支持するとともに、回転駆動部17と昇降駆動部18とを連結する可動連結部19と、を有している。回転駆動部17、昇降駆動部18及び可動連結部19は、処理容器2の外部に設けられている。なお、処理容器2内を真空状態にする場合は、シャフト14が底部13を貫通する部分の周囲に、例えばベローズなどのシール機構20を設けることができる。
排気装置6は、例えば、ドライポンプ等の真空ポンプを有している。マイクロ波加熱処理装置1は、更に、排気口13aと排気装置6とを接続する排気管21と、排気管21の途中に設けられた圧力調整バルブ22と、を備えている。排気装置6の真空ポンプを作動させることにより、処理容器2の内部空間が減圧排気される。なお、マイクロ波加熱処理装置1は、大気圧での処理も可能であり、その場合は、真空ポンプは不要である。排気装置6としてドライポンプ等の真空ポンプを用いる替わりに、マイクロ波加熱処理装置1が設置される施設に設けられた排気設備を用いることも可能である。
マイクロ波加熱処理装置1は、更に、処理容器2内にガスを供給するガス供給機構5を備えている。ガス供給機構5は、図示しないガス供給源を備えたガス供給装置5aと、ガス供給装置5aに接続され、処理容器2内に処理ガスを導入する複数の配管23と、を備えている。複数の配管23は、処理容器2の側壁12に接続されている。
マイクロ波加熱処理装置1は、更に、処理容器2内の複数の支持ピン16の周囲において、側壁部12との間に、枠状をした整流板24を備えている。整流板24は、整流板24を上下に貫通するように設けられた複数の整流孔24aを有している。整流板24は、処理容器2内においてウエハWが配置される予定の領域の雰囲気を整流しながら排気口13aに向かって流すためのものである。整流板24は、例えば、アルミニウム、アルミニウム合金、ステンレス等の金属材料によって形成されている。なお、整流板24は、マイクロ波加熱処理装置1における必須の構成要素ではなく、設けられていなくてもよい。
マイクロ波加熱処理装置1は、更に、ウエハWの表面温度を測定する複数の放射温度計26と、複数の放射温度計26に接続された温度計測部27とを備えている。なお、図1では、中空状のシャフト14を介してウエハWの裏面中央部の温度を測定する放射温度計26を除いて、複数の放射温度計26の図示を省略している。
本実施の形態のマイクロ波加熱処理装置1では、処理容器2内において、天井部11、4つの側壁部12及び整流板24で区画される空間がマイクロ波放射空間Sを形成している。このマイクロ波放射空間Sには、天井部11に設けられた複数のマイクロ波導入ポート10からマイクロ波が放射される。処理容器2の天井部11、4つの側壁部12及び整流板24は、いずれも金属材料によって形成されているため、マイクロ波を反射し、マイクロ波放射空間S内に散乱させる。
次に、図1及び図5を参照して、マイクロ波導入装置3の構成について説明する。図5は、マイクロ波導入装置3の高電圧電源部の概略の構成を示す説明図である。
本実施の形態では、複数のマイクロ波ユニット30の構成は全て同一である。各マイクロ波ユニット30は、ウエハWを処理するためのマイクロ波を生成するマグネトロン31と、マグネトロン31において生成されたマイクロ波を処理容器2に伝送する導波管32と、マイクロ波導入ポート10を塞ぐように天井部11に固定された透過窓33とを有している。マグネトロン31は、本発明におけるマイクロ波源に対応する。
高電圧電源部40は、マグネトロン31に対してマイクロ波を生成するための高電圧を供給する。図5に示したように、高電圧電源部40は、商用電源に接続されたAC-DC変換回路41と、AC-DC変換回路41に接続されたスイッチング回路42と、スイッチング回路42の動作を制御するスイッチングコントローラ43と、スイッチング回路42に接続された昇圧トランス44と、昇圧トランス44に接続された整流回路45とを有している。マグネトロン31は、整流回路45を介して昇圧トランス44に接続されている。
次に、図1、図6及び図7を参照して、本実施の形態におけるマイクロ波導入ポート10の配置について詳しく説明する。図6は、図1に示した処理容器2の天井部11の下面を処理容器2の内部から見た状態を示している。図6では、ウエハWの大きさと位置を2点鎖線で天井部11に重ねて示した。符号OはウエハWの中心を表し、かつ、本実施の形態では、天井部11の中心も表している。符号Oを通る2つの線は、天井部11と側壁部12の境界となる4つの辺において、対向する辺の中点どうしを結ぶ中央線Mを表している。なお、ウエハWの中心と天井部11の中心とは必ずしも重ならなくてもよい。また、図6では、説明の便宜上、天井部11と処理容器2の4つの側壁部12の内壁面との接合部分に、4つの側壁部12を区別して符号12A、12B、12C、12Dを付し、それらの位置を示している。また、図7は、一つのマイクロ波導入ポート10を拡大して示す平面図である。
ここで、マイクロ波導入ポート10の配置に関する変形例について、図8~図10を参照して説明する。図6では、マイクロ波導入ポート10B,10Dを、前記基準位置から、それぞれY軸方向に平行移動させた配置例を示した。しかしながら、例えば図8に示すように、マイクロ波導入ポート10B,10Dを、それらの中心OPが半径ROUTの仮想円周上に重なるように、基準位置(図8において仮想線で示す)からX軸方向に平行移動させてもよい。この場合も、図6の場合と同様に、ウエハWを水平回転させた場合に、ウエハWの周方向における加熱の均一性とともに、ウエハWの径方向における加熱の均一性を高めることができる。また、図示は省略するが、マイクロ波導入ポート10B,10Dを、それらの中心OPが半径ROUTの仮想円周上に重なるように、基準位置からX軸方向及びY軸方向の両方向に移動させてもよい。
マイクロ波加熱処理装置1の各構成部は、それぞれ制御部8に接続されて、制御部8によって制御される。制御部8は、典型的にはコンピュータである。図14は、図1に示した制御部8の構成を示す説明図である。図14に示した例では、制御部8は、CPUを備えたプロセスコントローラ81と、このプロセスコントローラ81に接続されたユーザーインターフェース82および記憶部83とを備えている。
次に、ウエハWに対してアニール処理を施す際のマイクロ波加熱処理装置1における処理の手順について説明する。まず、例えばユーザーインターフェース82から、マイクロ波加熱処理装置1においてアニール処理を行うように、プロセスコントローラ81に指令が入力される。次に、プロセスコントローラ81は、この指令を受けて、記憶部83またはコンピュータ読み取り可能な記憶媒体に保存されたレシピを読み出す。次に、レシピに基づく条件によってアニール処理が実行されるように、プロセスコントローラ81からマイクロ波加熱処理装置1の各エンドデバイス(例えば、マイクロ波導入装置3、支持装置4、ガス供給装置5a、排気装置6等)に制御信号が送出される。
図19は、マイクロ波加熱処理装置1を用い、支持ピン16上に支持された300mm径ウエハWの高さ位置を変化させてアニール処理をした場合のウエハWの面内での温度変化を計測した実験結果を示すグラフである。この実験では、ポイント1(ウエハWの中心Oから径方向に0mm)、ポイント2(同75mm)、ポイント3(同145mm)の3か所を計測点とした。アニール処理は、マイクロ波周波数5.8GHz、マイクロ波パワー2000W、圧力90kPa、窒素ガス流量10slm(L/min)として、5分間実施した。図19の横軸は、ウエハWの高さ位置を、整流板24の上面からの高さ(mm)で示している。なお、整流板24の上面から、マイクロ波導入ポート10を塞ぐ透過窓33の下面までの高さは、67mmである。図19の縦軸は、ウエハWの各計測ポイントにおける到達温度である。図19から、ポイント1とポイント2、3とでは、ウエハWの高さ位置による加熱温度の傾向が大きく異なっていることがわかる。例えば、ウエハWの面内の3か所の計測ポイントの温度差は、整流板24の上面からの高さが20mm前後のときは、2~3℃程度であるのに対し、整流板24の上面からの高さが30mm前後では、40℃程度にまで拡大している。このことは、ウエハWの面内での温度分布は、ウエハWの高さ位置によって変化するとともに、該高さ位置を変えることによって、ウエハWの面内での温度分布を制御できることを示している。
図20は、マイクロ波加熱処理装置1を用い、不純物としてヒ素をドープしたシリコンウエハの高さ位置を変化させてアニール処理を行い、活性化させた場合のシート抵抗値の計測結果を示すグラフである。アニール処理の条件は、実験1と同様とした。図20では、ウエハWの高さ位置を、整流板24の上面から21.2mm、27.0mm、31.2mmに設定した場合と、高さ位置27.0mmでの3分間処理と高さ位置31.2mmでの2分間処理とを組み合わせた場合について、シート抵抗値(ρs)の平均と標準偏差を示している。また、図20中には、各高さ位置におけるシート抵抗のウエハWの面内分布を示すマップも併記した。これらのマップは、白黒表示のため、シート抵抗の厳密な面内分布を表現できていないが、色の濃淡が少ないほどシート抵抗の分布が小さい(均一性がよい)ことを示している。
マイクロ波加熱処理装置1を用い、支持ピン16上に支持された300mm径ウエハWの高さ位置を変化させてアニール処理をした場合のウエハWの面内での温度変化及びマイクロ波反射量を計測した。マイクロ波反射量は、検出器35により計測した(以下、同様である)。この実験では、アニール処理は、マイクロ波周波数5.8GHz、マイクロ波パワー3900W、圧力100kPa、窒素ガス流量5slm(L/min)として、2分間実施した。
図25は、マイクロ波加熱処理装置1を用い、支持ピン16上に支持された300mm径ウエハWの高さ位置を変えてアニール処理をした場合のウエハWの最高到達温度を計測した実験結果を示すグラフである。実験は、ウエハ高さZを変えて実施した。アニール処理は、マイクロ波周波数5.8GHz、マイクロ波パワー3900W、圧力100kPa、窒素ガス流量5slm(L/min)として、5分間実施した。図25より、ウエハ高さZを変化させることによって、ウエハWの加熱温度(最高到達温度)も変化しており、ウエハ高さZが加熱効率に影響を与えることが確認された。
図26は、マイクロ波加熱処理装置1を用い、実験4と同様の条件で支持ピン16上に支持された300mm径ウエハWの高さ位置を変えてアニール処理をした場合のマイクロ波反射量を計測した実験結果を示すグラフである。図26より、ウエハ高さZを変化させることによって、マイクロ波反射量も変化しており、ウエハ高さZがマイクロ波の吸収効率に影響を与えることが確認された。
次に、図29~図31を参照しながら、本発明の第2の実施の形態に係るマイクロ波加熱処理装置について説明する。図29は、本実施の形態に係るマイクロ波加熱処理装置1Aの概略の構成を示す断面図である。図30は、マイクロ波加熱処理装置1Aにおいて、天井部11に、内部にマイクロ波を伝送する導波路を有するアダプター部材としてのマイクロ波導入アダプター50を装着した状態を示す説明図である。図31は、マイクロ波導入アダプター50に形成された溝の状態を示す説明図である。本実施の形態に係るマイクロ波加熱処理装置1Aは、連続する複数の動作を伴って、例えば半導体デバイス製造用の半導体ウエハWに対して、マイクロ波を照射してアニール処理を施す装置である。以下の説明では、第1の実施の形態のマイクロ波加熱処理装置1との相違点を中心に説明し、図29~図31に示すマイクロ波加熱処理装置1Aにおいて、第1の実施の形態のマイクロ波加熱処理装置1と同じ構成には同一の符号を付して説明を省略する。
Claims (11)
- 内部にマイクロ波放射空間を有するとともに被処理体を収容する処理容器と、
前記処理容器内で被処理体を支持する支持装置と、
前記被処理体を加熱処理するためのマイクロ波を生成して前記処理容器に導入するマイクロ波導入装置と、
を備えたマイクロ波加熱処理装置であって、
前記処理容器は、上壁、底壁及び互いに接続された4つの側壁を有し、
前記上壁は、前記マイクロ波導入装置において生成された前記マイクロ波を前記処理容器に導入する複数のマイクロ波導入ポートを有しており、
前記複数のマイクロ波導入ポートは、それぞれ、長辺と短辺とを有する平面視矩形をなし、その長辺と短辺が、前記4つの側壁の内壁面と平行になるように設けられており、
前記支持装置は、被処理体に当接して支持する支持部材と、前記支持部材に支持された被処理体を回転させる回転機構とを備えていることを特徴とするマイクロ波加熱処理装置。 - 前記支持装置は、さらに、前記支持部材が被処理体を支持する高さ位置を調節する高さ位置調節機構を備えている請求項1に記載のマイクロ波加熱処理装置。
- 前記複数のマイクロ波導入ポートは第1ないし第4のマイクロ波導入ポートを含み、前記第1ないし第4のマイクロ波導入ポートは、前記上壁の中心から外側へ向かう方向に、内側のマイクロ波放射ゾーンを形成する2つのマイクロ波導入ポートと、外側のマイクロ波放射ゾーンを形成する2つのマイクロ波導入ポートと、に区分されている請求項1に記載のマイクロ波加熱処理装置。
- 前記内側のマイクロ波放射ゾーンを形成する2つのマイクロ波導入ポートは、それらの中心が、2つの仮想の同心円のうちの内側の円周上に重なり、前記外側のマイクロ波放射ゾーンを形成する2つのマイクロ波導入ポートは、それらの中心が、前記2つの仮想の同心円のうち外側の円周上に重なるように、それぞれ配置されている請求項3に記載のマイクロ波加熱処理装置。
- 前記第1ないし第4のマイクロ波導入ポートは、互いに隣接する2つのマイクロ波導入ポートの長辺の方向と平行な中心軸が互いに直交するように、かつ、互いに隣接しない2つのマイクロ波導入ポートの前記中心軸が同一直線上に重ならないように配置されている請求項3に記載のマイクロ波加熱処理装置。
- 前記複数のマイクロ波導入ポートは、前記上壁の中心から外側へ向かう方向において、前記上壁の中心からの距離が互いに異なって配置されている請求項1に記載のマイクロ波加熱処理装置。
- 前記マイクロ波導入ポートの長辺の長さL1と短辺の長さL2との比(L1/L2)が、4以上である請求項1に記載のマイクロ波加熱処理装置。
- 前記マイクロ波導入装置は、
マイクロ波を前記処理容器へ向けて伝送する導波管と、
前記処理容器の上壁の外側に装着され、複数の金属製のブロック体によって構成されたアダプター部材と、
を備え、
前記アダプター部材は、内部にマイクロ波を伝送する略S字形をした導波路を有している請求項1に記載のマイクロ波加熱処理装置。 - 前記導波路は、その一端側が前記導波管に接続され、他端側が前記マイクロ波導入ポートに接続されることによって、前記導波管と前記マイクロ波導入ポートの一部もしくは全部が互いに上下に重ならない位置で接続している請求項8に記載のマイクロ波加熱処理装置。
- 内部にマイクロ波放射空間を有するとともに被処理体を収容する処理容器と、
前記処理容器内で被処理体を支持する支持装置と、
前記被処理体を加熱処理するためのマイクロ波を生成して前記処理容器に導入するマイクロ波導入装置と、
を備えたマイクロ波加熱処理装置を用いて前記被処理体を加熱処理する処理方法であって、
前記処理容器は、上壁、底壁及び互いに接続された4つの側壁を有し、
前記上壁は、前記マイクロ波導入装置において生成された前記マイクロ波を前記処理容器に導入する複数のマイクロ波導入ポートを有しており、
前記複数のマイクロ波導入ポートは、それぞれ、長辺と短辺とを有する平面視矩形をなし、その長辺と短辺が、前記4つの側壁の内壁面と平行になるように設けられており、
前記支持装置は、被処理体に当接して支持する支持部材と、前記支持部材に支持された被処理体を回転させる回転機構とを備えており、
前記複数のマイクロ波導入ポートは、前記上壁の中心から外側へ向かう方向に、内側のマイクロ波放射ゾーンを形成するマイクロ波導入ポートと、外側のマイクロ波放射ゾーンを形成するマイクロ波導入ポートと、に区分されており、
前記回転機構により、前記支持部材に支持された被処理体を回転させながら、前記複数のマイクロ波導入ポートから、それぞれマイクロ波を導入して被処理体を処理することを特徴とする処理方法。 - 前記支持装置は、さらに、前記支持部材が被処理体を支持する高さ位置を調節する高さ位置調節機構を備えており、
前記高さ位置調節機構により、前記支持部材に支持された被処理体を、第1の高さ位置に設定して処理する第1のステップと、前記高さ位置調節機構により、前記支持部材に支持された被処理体を、前記第1の高さ位置とは異なる第2の高さ位置に設定して処理する第2のステップと、を備えている請求項10に記載の処理方法。
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