WO2013128932A1 - 透明導電フィルム及びそれを備えた有機薄膜太陽電池 - Google Patents

透明導電フィルム及びそれを備えた有機薄膜太陽電池 Download PDF

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Publication number
WO2013128932A1
WO2013128932A1 PCT/JP2013/001235 JP2013001235W WO2013128932A1 WO 2013128932 A1 WO2013128932 A1 WO 2013128932A1 JP 2013001235 W JP2013001235 W JP 2013001235W WO 2013128932 A1 WO2013128932 A1 WO 2013128932A1
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WO
WIPO (PCT)
Prior art keywords
layer
transparent conductive
film
organic
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/001235
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English (en)
French (fr)
Japanese (ja)
Inventor
東　耕平
塚原　次郎
佳紀 前原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of WO2013128932A1 publication Critical patent/WO2013128932A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the electrode on the light receiving side has high transparency.
  • the functional layer (photoelectric conversion layer) containing an organic material generally deteriorates with time due to water vapor or oxygen in the air, for example, a water vapor transmission rate of 1 ⁇ 10 ⁇ 3 g / m 2 / day or less @ 25 ° C. 50% It is necessary to provide a gas barrier layer having a high barrier property on the order of RH to prevent water vapor and oxygen in the air from entering the functional layer.
  • the gas barrier film includes at least two organic layers and at least two inorganic layers.
  • the transparent conductive film 1 is suitable as a member of a flexible organic electronic device in which a flexible substrate (film substrate) having a high gas barrier property provided with a transparent conductive layer having both high transparency and high conductivity is required.
  • the organic thin film solar cell can be used as an electrode on the light receiving side, and can be used as both a positive electrode (cathode) and a negative electrode (anode).
  • a configuration using the transparent conductive film 1 as a positive electrode is referred to as a forward configuration
  • a configuration using as a negative electrode is referred to as a reverse configuration.
  • the inorganic layer 22 is not particularly limited as long as it is a transparent inorganic layer having gas barrier properties, but silicon or aluminum oxides, nitrides, carbides, oxynitrides, oxycarbides, oxycarbides, and oxynitride carbides. preferable.
  • the thickness of the conductive layer 30 is preferably 50 nm or more and 1 ⁇ m or less, and more preferably 100 nm or more and 300 nm or less.
  • the conductive layer 30 preferably has a specific resistance of 8 ⁇ 10 ⁇ 3 ⁇ ⁇ cm or less.
  • the required film thickness of the auxiliary metal wiring (32, 33) can be reduced by reducing the specific resistance of the auxiliary metal wiring (32, 33) by devising the film forming method.
  • the transparent conductive layer 31 may be coated and formed so as to be flush with the opening 32P and the auxiliary metal wiring (32, 33).
  • An example of a film forming method for reducing the specific resistance is a vapor deposition method, and a metal film formed by the vapor deposition method has a low specific resistance close to that of a bulk metal and is preferable.
  • the line width of the bus line 33 is not necessarily uniform.
  • the bus line (auxiliary metal wiring) 33 and the thin wire portion 32 may be made of the same material or different materials. The same preferences as the conductive stripe are applied to the thickness, cross-sectional shape, and material of the bus line.
  • the transparent conductive layer 31 is at least filled in the opening 32P of the auxiliary metal wiring (32, 33), and is a layer in contact with the gas barrier film 20 and the auxiliary metal wiring (32, 33).
  • the transparent conductive layer 31 needs to be transparent in the emission spectrum or action spectrum range of the organic electronic device (organic thin-film solar cell) to which the transparent conductive film 1 is to be applied. It must be excellent in light transmittance. Specifically, when the film thickness is 0.1 ⁇ m, the average light transmittance of the formed layer in the wavelength region of 400 nm to 800 nm is 50% or more, preferably 75% or more, and preferably 85% or more. It is more preferable.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
PCT/JP2013/001235 2012-02-29 2013-02-28 透明導電フィルム及びそれを備えた有機薄膜太陽電池 Ceased WO2013128932A1 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012-043030 2012-02-29
JP2012043030 2012-02-29
JP2012066619A JP2013211283A (ja) 2012-02-29 2012-03-23 透明導電フィルム及びそれを備えた有機薄膜太陽電池
JP2012-066619 2012-03-23

Publications (1)

Publication Number Publication Date
WO2013128932A1 true WO2013128932A1 (ja) 2013-09-06

Family

ID=49082143

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/001235 Ceased WO2013128932A1 (ja) 2012-02-29 2013-02-28 透明導電フィルム及びそれを備えた有機薄膜太陽電池

Country Status (2)

Country Link
JP (1) JP2013211283A (enExample)
WO (1) WO2013128932A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016152704A1 (ja) * 2015-03-25 2016-09-29 積水化学工業株式会社 太陽電池
WO2016157987A1 (ja) * 2015-03-27 2016-10-06 リンテック株式会社 透明導電層積層用フィルム、その製造方法、及び透明導電性フィルム
CN108349216A (zh) * 2015-11-06 2018-07-31 琳得科株式会社 透明导电层叠层用膜、其制造方法、以及透明导电膜
CN110416341A (zh) * 2018-04-27 2019-11-05 北京铂阳顶荣光伏科技有限公司 导电电极膜层和光伏元件

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2930385C (en) * 2013-11-12 2018-07-10 Ppg Industries Ohio, Inc. Photovoltaic systems and spray coating processes for producing photovoltaic systems
JP6594706B2 (ja) * 2015-08-26 2019-10-23 株式会社カネカ 透明電極フィルムおよび表示デバイス
JP6527053B2 (ja) * 2015-08-28 2019-06-05 富士フイルム株式会社 ガスバリアフィルムおよびガスバリアフィルムの転写方法
WO2018181181A1 (ja) 2017-03-27 2018-10-04 凸版印刷株式会社 透明導電性ガスバリア積層体及びこれを備えたデバイス
US10923680B2 (en) * 2018-10-11 2021-02-16 The Boeing Company Multifunctional composite panels and methods for the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087339A (ja) * 2008-10-01 2010-04-15 Fujifilm Corp 有機太陽電池素子
JP2010157681A (ja) * 2008-12-04 2010-07-15 Dainippon Printing Co Ltd 有機薄膜太陽電池およびその製造方法
JP2011244020A (ja) * 2011-09-09 2011-12-01 Dainippon Printing Co Ltd 有機薄膜太陽電池
WO2012020657A1 (ja) * 2010-08-12 2012-02-16 富士フイルム株式会社 透明導電フィルム及びその製造方法並びに有機電子デバイス及び有機薄膜太陽電池

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087339A (ja) * 2008-10-01 2010-04-15 Fujifilm Corp 有機太陽電池素子
JP2010157681A (ja) * 2008-12-04 2010-07-15 Dainippon Printing Co Ltd 有機薄膜太陽電池およびその製造方法
WO2012020657A1 (ja) * 2010-08-12 2012-02-16 富士フイルム株式会社 透明導電フィルム及びその製造方法並びに有機電子デバイス及び有機薄膜太陽電池
JP2011244020A (ja) * 2011-09-09 2011-12-01 Dainippon Printing Co Ltd 有機薄膜太陽電池

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016152704A1 (ja) * 2015-03-25 2016-09-29 積水化学工業株式会社 太陽電池
JP6034540B1 (ja) * 2015-03-25 2016-11-30 積水化学工業株式会社 太陽電池
EP3276694A4 (en) * 2015-03-25 2018-11-07 Sekisui Chemical Co., Ltd. Solar cell
WO2016157987A1 (ja) * 2015-03-27 2016-10-06 リンテック株式会社 透明導電層積層用フィルム、その製造方法、及び透明導電性フィルム
CN107405880A (zh) * 2015-03-27 2017-11-28 琳得科株式会社 透明导电层叠层用膜、其制造方法及透明导电膜
JPWO2016157987A1 (ja) * 2015-03-27 2018-01-18 リンテック株式会社 透明導電層積層用フィルム、その製造方法、及び透明導電性フィルム
CN108349216A (zh) * 2015-11-06 2018-07-31 琳得科株式会社 透明导电层叠层用膜、其制造方法、以及透明导电膜
EP3372400A4 (en) * 2015-11-06 2019-05-22 Lintec Corporation FILM FOR TRANSPARENT CONDUCTIVE LAYER COATING, METHOD FOR THE PRODUCTION THEREOF AND TRANSPARENT CONDUCTIVE FILM
CN110416341A (zh) * 2018-04-27 2019-11-05 北京铂阳顶荣光伏科技有限公司 导电电极膜层和光伏元件

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