WO2016152704A1 - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- WO2016152704A1 WO2016152704A1 PCT/JP2016/058458 JP2016058458W WO2016152704A1 WO 2016152704 A1 WO2016152704 A1 WO 2016152704A1 JP 2016058458 W JP2016058458 W JP 2016058458W WO 2016152704 A1 WO2016152704 A1 WO 2016152704A1
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- electrode
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- solar cell
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to a solar cell including a photoelectric conversion layer containing an organic / inorganic perovskite compound.
- Patent Document 1 discloses an example of this type of solar cell.
- a first electrode is provided on a substrate made of glass or the like.
- a photoelectric conversion layer including a layer mainly composed of an organic / inorganic perovskite compound is provided over the first electrode.
- a second electrode is formed on the photoelectric conversion layer.
- a solar cell using an organic photoelectric conversion layer such as an organic / inorganic perovskite compound
- flexibility can be enhanced by using a flexible base material.
- a solar cell deteriorates when exposed to the external environment, and as a result, moisture may enter the inside from the electrode surface. Further, there is a problem that the wiring for connecting to the external electrode deteriorates due to corrosion.
- An object of the present invention is to provide a solar cell which is excellent in gas barrier properties and hardly causes deterioration of wiring.
- the solar cell according to the present invention includes a first electrode, a second electrode disposed to face the first electrode, the first electrode, and the second electrode.
- a photoelectric conversion layer including an organic / inorganic perovskite compound, a plurality of auxiliary wirings provided on the second electrode, and a plurality of auxiliary wirings provided on the second electrode.
- a resin layer provided so as to fill between the wirings, and an inorganic layer provided so as to cover the plurality of auxiliary wirings and the resin layer.
- the thickness of the plurality of auxiliary wirings is larger than the thickness of the resin layer.
- the solar cell further includes a first terminal connected to the first electrode and a second terminal connected to the plurality of auxiliary wirings.
- the inorganic layer is made of a conductive material, and the second terminal is provided on the inorganic layer.
- the second electrode forms a laminated structure laminated directly or indirectly on the photoelectric conversion layer, and an outer periphery of the laminated structure.
- An insulating layer is further provided so as to cover the surface.
- some of the plurality of auxiliary wirings reach the upper surface of the insulating layer, and the auxiliary wiring is provided on the insulating layer via the auxiliary wiring.
- the second terminal is provided.
- the organic / inorganic perovskite compound is represented by the general formula R-MX 3 (where R is an organic molecule, M is a metal atom, X is a halogen atom or a chalcogen atom). It is expressed by.
- the resin layer includes a wiring corrosion inhibitor.
- the first electrode is made of a metal foil.
- the electron transport layer disposed between the first electrode and the photoelectric conversion layer, and the layer disposed between the photoelectric conversion layer and the second electrode. And a hole transport layer.
- the present invention it is possible to provide a solar cell that is excellent in gas barrier properties and hardly causes deterioration of wiring.
- FIG. 1 is a schematic cross-sectional view showing a solar cell according to the first embodiment of the present invention.
- FIG. 2 is an enlarged schematic plan view showing the auxiliary wiring portion of the solar cell according to the first embodiment of the present invention.
- FIG. 3 is a schematic cross-sectional view showing a solar cell according to the second embodiment of the present invention.
- FIG. 4 is a schematic cross-sectional view showing a solar cell according to the third embodiment of the present invention.
- FIG. 5 is a schematic plan view showing an auxiliary wiring portion in a modification of the solar cell according to the first embodiment of the present invention.
- FIG. 1 is a schematic cross-sectional view showing a solar cell according to the first embodiment of the present invention.
- FIG. 2 is an enlarged schematic plan view showing an auxiliary wiring portion of the solar cell according to the first embodiment of the present invention.
- the solar cell 1 includes first and second electrodes 2 and 7, first and second electron transport layers 3 and 4, a photoelectric conversion layer 5, a hole transport layer 6, an auxiliary wiring 8, A resin layer 9 and an inorganic layer 10 are provided.
- the first electrode 2 is made of a metal foil.
- the metal which comprises metal foil is not specifically limited, Appropriate metals or alloys, such as stainless steel, Al, Cu, Ni, or Ti, can be used. When metal foil is used, the flexibility of the solar cell 1 can be improved.
- the first electrode 2 is not limited to a metal foil, and may be a resin film or a metal substrate provided with a metal electrode, for example.
- the material constituting the resin film include PET, PEN, polyimide, or polycarbonate.
- the material constituting the metal electrode include Al, Cu, Mo, Ni, Ti, Fe, or a laminate thereof.
- the first and second electron transport layers 3 and 4 are provided on the first electrode 2. Although the first and second electron transport layers 3 and 4 may not be provided, the photoelectric conversion efficiency can be increased by providing the first and second electron transport layers 3 and 4.
- a photoelectric conversion layer 5 is provided on the second electron transport layer 4.
- the photoelectric conversion layer 5 contains an organic-inorganic perovskite compound. In the solar cell 1, photoelectric conversion is performed by this organic / inorganic perovskite compound, and electric power is taken out.
- a hole transport layer 6 is provided on the photoelectric conversion layer 5.
- the hole transport layer 6 may not be used.
- a second electrode 7 is provided on the hole transport layer 6.
- the second electrode 7 is disposed so as to face the first electrode 2. Therefore, the first and second electron transport layers 3 and 4, the photoelectric conversion layer 5, and the hole transport layer 6 are disposed between the first and second electrodes 2 and 7.
- the first and second electron transport layers 3 and 4, the photoelectric conversion layer 5, and the hole transport layer 6 are laminated in this order from the first electrode 2 side. Details of each layer will be described later.
- An auxiliary wiring 8 and a resin layer 9 are provided on the second electrode 7.
- the lower end of the auxiliary wiring 8 is in contact with and electrically connected to the upper surface of the second electrode 7.
- the auxiliary wiring 8 is formed by the intersection of a plurality of auxiliary wirings extending in the X direction and a plurality of auxiliary wirings extending in the Y direction that is perpendicular to the X direction. It has a lattice shape as a whole.
- the shape of the auxiliary wiring 8 is not particularly limited, but may be a plurality of line-shaped auxiliary wirings, for example.
- the material constituting the auxiliary wiring 8 is not particularly limited as long as it is a conductive material. However, it is preferable to use a metal or alloy such as Cu, Al, or Ag. Costs can be reduced by using this type of metal or alloy. In addition, the electric resistance of the electrical connection portion can be lowered and a larger amount of power can be taken out.
- the resin layer 9 is provided so as to fill between the plurality of auxiliary wirings 8 extending in the X direction and the Y direction. Even if moisture enters the resin layer from a defective part due to the influence of foreign matter or the like by providing a plurality of auxiliary wirings 8 embedded in the resin layer 9 (the resin layer 9 is partitioned) Moisture does not easily reach the lower solar cell portion (in particular, the photoelectric conversion layer 5 containing an organic / inorganic perovskite compound described later).
- the resin layer 9 is thinner than the auxiliary wiring 8.
- the resin layer 9 may have the same thickness as the auxiliary wiring 8 or may be thicker than the auxiliary wiring 8, but is preferably thinner than the auxiliary wiring 8 as in the present embodiment. In this case, the resin layer 9 can be partitioned more easily.
- An inorganic layer 10 is provided so as to cover the auxiliary wiring 8 and the resin layer 9. More specifically, the inorganic layer 10 covers the upper surface of the auxiliary wiring 8, a part of the side surface of the auxiliary wiring 8, and the upper surface of the resin layer 9.
- the inorganic layer 10 is excellent in barrier properties such as moisture. Accordingly, it is possible to effectively suppress the penetration of water vapor or the like into the interior.
- the water vapor barrier property of the inorganic layer 10 it is desirable that the water vapor transmission rate (WVTR) is less than 10 ⁇ 1 g / m 2 / day.
- WVTR water vapor transmission rate
- the metal oxide, metal nitride, or metal oxynitride is included.
- the metal in the metal oxide, metal nitride or metal oxide is not particularly limited.
- Si, Al, Zn, Sn, In, Ti, Mg, Zr, Ni, Ta, W, Cu, or these metals are mainly used. Can be mentioned.
- the metal oxide and metal nitride containing both Zn and Sn are preferable.
- the solar cell 1 by providing the inorganic layer 10, it is possible to reliably suppress the intrusion of moisture into the lower solar cell portion.
- the auxiliary wiring 8 is covered with the inorganic layer 10, deterioration of the auxiliary wiring 8 due to corrosion can be suppressed.
- the auxiliary wiring 8 when the auxiliary wiring 8 reaches at least a part of the side surface and is covered with the inorganic layer 10, the deterioration of the auxiliary wiring 8 can be further suppressed.
- FIG. 5 is a schematic plan view showing an auxiliary wiring portion in a modification of the solar cell according to the first embodiment of the present invention.
- a plurality of types of auxiliary wirings 8, 8A, 8B are provided. That is, as in the first embodiment, the narrow auxiliary wirings 8 are arranged in a grid pattern.
- An auxiliary wiring 8A having a width wider than that of the auxiliary wiring 8 is provided so as to extend in the horizontal direction in FIG. Further, a plurality of auxiliary wirings 8B having a wider width extend in a direction intersecting with the auxiliary wiring 8A.
- auxiliary wirings 8, 8A, 8B having different widths may be provided.
- a plurality of types of auxiliary wirings 8, 8A, 8B having different widths may be provided.
- not only the thickness but also a plurality of types of auxiliary wirings having different heights may be used.
- a plurality of types of auxiliary wirings having different thicknesses, heights and thicknesses may be used.
- FIG. 3 is a schematic cross-sectional view showing a solar cell according to the second embodiment of the present invention.
- the second terminal 12 is joined to the inorganic layer 10.
- the second terminal 12 is provided above a portion where the auxiliary wiring 8 and a part of the resin layer 9 are provided.
- the first terminal 11 is provided below the portion where the second terminal 12 is provided.
- the first terminal 11 is electrically joined to the first electrode 2. In that case, the first terminal may be extended to serve as the second terminal in another connected solar cell.
- the first terminal 11 may not be provided, and the first electrode 2 itself may be electrically connected to the outside.
- the inorganic layer 10 is made of a conductive material.
- the conductive material include, but are not limited to, ZnO, SnO or ZnSnO doped with ITO, ZnO, Al, Ga, or In. These may be used alone or in combination. Other points are the same as in the first embodiment.
- the solar cell 21 is excellent in barrier properties such as gas barrier properties.
- the auxiliary wiring 8 is covered with the inorganic layer 10. Therefore, also in the solar cell 21, deterioration due to corrosion of the auxiliary wiring 8 can be suppressed.
- the inorganic layer 10 is made of a conductive material, and the second terminal 12 is provided on the inorganic layer 10. Therefore, the second terminal 12 and the auxiliary wiring 8 are electrically connected. In addition, since the second terminal 12 is provided above the auxiliary wiring 8, light is not easily blocked and sufficient light can be guided to the photoelectric conversion layer 5.
- FIG. 4 is a schematic cross-sectional view showing a solar cell according to the third embodiment of the present invention.
- the insulating layer 13 is provided so as to seal the outer side surface of the solar cell 31.
- the solar cell 31 has excellent sealing properties, even if the organic / inorganic perovskite compound contains Pb, elution of Pb ions to the outside hardly occurs. Therefore, the insulating layer 13 only needs to cover at least the photoelectric conversion layer 5.
- the insulating material constituting the insulating layer 13 is not particularly limited. That is, an organic insulating material may be used.
- an inorganic insulating material may be used. Examples of such an inorganic insulating material include inorganic oxides such as SiO 2 , Al 2 O 3 , and ZrO, glass, crease, and the like. Further, if the heat resistance is sufficiently good, an organic insulating material may be used. Examples of such an organic insulating material include thermosetting polyimide.
- auxiliary wiring 8 As shown in FIG. 4, in the present embodiment, a part of the auxiliary wiring 8 is provided so as to reach the upper end and the side surface of the insulating layer 13. As shown in FIG. 4, the lower end of the auxiliary wiring 8 is in contact with and electrically connected to the upper surface of the second electrode 7.
- the inorganic layer 10 is removed from a part of the auxiliary wiring 8 provided at the upper end of the insulating layer 13.
- the second terminal 12 is joined to the portion where the inorganic layer 10 is removed and the auxiliary wiring 8 is exposed.
- the second electrode 7 may be disposed between the insulating layer 13 and the auxiliary wiring 8.
- the first terminal 11 is provided below the portion where the second terminal 12 is provided.
- the first terminal 11 is electrically joined to the first electrode 2.
- Other points are the same as in the first embodiment.
- the solar cell 31 is excellent in barrier properties such as gas barrier properties.
- the auxiliary wiring 8 is covered with the inorganic layer 10. Therefore, the deterioration of the auxiliary wiring 8 due to corrosion can be suppressed.
- auxiliary wiring 8 is provided on the upper end of the insulating layer 13, and the second terminal 12 is provided on the auxiliary wiring 8. Therefore, even if the second terminal 12 is provided, light is not blocked and sufficient light can be guided to the photoelectric conversion layer 5.
- the first and second electrodes may be formed using an appropriate conductive material.
- suitable conductive material include FTO (fluorine-doped tin oxide), sodium, sodium-potassium alloy, lithium, magnesium, aluminum, magnesium-silver mixture, magnesium-indium mixture, aluminum-lithium alloy, Al / Al 2 O. 3 mixture, Al / LiF mixture, metal such as gold, CuI, ITO (indium tin oxide), SnO 2 , AZO (aluminum zinc oxide), IZO (indium zinc oxide), GZO (gallium zinc oxide), etc.
- the first electrode is preferably a metal foil.
- the second electrode is preferably transparent. Thereby, sufficient light can be guided to the photoelectric conversion layer. Therefore, it is desirable to use an electrode material having excellent transparency such as ITO for the second electrode.
- the material of the first and second electron transport layers is not particularly limited, and for example, an N-type conductive polymer, an N-type low molecular organic semiconductor, an N-type metal oxide, an N-type metal sulfide, an alkali metal halide,
- alkali metals, surfactants, and the like specifically, for example, cyano group-containing polyphenylene vinylene, boron-containing polymer, bathocuproine, bathophenanthrene, hydroxyquinolinato aluminum, oxadiazole compound, benzimidazole compound, naphthalene tetracarboxylic acid
- examples thereof include compounds, perylene derivatives, phosphine oxide compounds, phosphine sulfide compounds, fluoro group-containing phthalocyanines, titanium oxide, zinc oxide, indium oxide, tin oxide, gallium oxide, tin sulfide, indium sulfide, and zinc sulfide.
- the first electron transport layer may be used, it is more preferable to provide a porous second electron transport layer.
- the photoelectric conversion layer is a composite film in which an organic semiconductor or an inorganic semiconductor part and an organic / inorganic perovskite compound part are combined, a more complex composite film (a more complicated and complicated structure) is obtained. It is preferable that a composite film is formed on the porous second electron transporting layer because efficiency increases.
- the thickness of the electron transport layer has a preferable lower limit of 1 nm and a preferable upper limit of 2000 nm.
- the thickness of the electron transport layer is the thickness of the first electron transport layer when only the first electron transport layer is used, and the thickness of the first electron transport layer when the second electron transport layer is used.
- the total thickness of the second electron transport layer shall be said.
- the thickness of the electron transport layer is 1 nm or more, holes can be sufficiently blocked. If the said thickness is 2000 nm or less, it will become difficult to become resistance at the time of electron transport, and photoelectric conversion efficiency will become high.
- the more preferable lower limit of the thickness of the electron transport layer is 3 nm, the more preferable upper limit is 1000 nm, the still more preferable lower limit is 5 nm, and the more preferable upper limit is 500 nm.
- the photoelectric conversion layer includes an organic / inorganic perovskite compound represented by the general formula R-MX 3 (where R is an organic molecule, M is a metal atom, and X is a halogen atom or a chalcogen atom).
- R-MX 3 an organic / inorganic perovskite compound represented by the general formula R-MX 3 (where R is an organic molecule, M is a metal atom, and X is a halogen atom or a chalcogen atom).
- R is an organic molecule and is preferably represented by ClNmHn (l, m and n are all positive integers).
- R is, for example, methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, dimethylamine, diethylamine, dipropylamine, dibutylamine, dipentylamine, dihexylamine, trimethylamine, triethylamine, tripropyl.
- methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine and their ions and phenethylammonium are preferred, and methylamine, ethylamine, propylamine and these ions are more preferred.
- M is a metal atom, for example, lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, Europium etc. are mentioned. These metal atoms may be used independently and 2 or more types may be used together.
- X is a halogen atom or a chalcogen atom, and examples thereof include chlorine, bromine, iodine, sulfur, selenium and the like. These halogen atoms or chalcogen atoms may be used alone or in combination of two or more. Among these, the halogen atom is preferable because the organic / inorganic perovskite compound becomes soluble in an organic solvent and can be applied to an inexpensive printing method by containing halogen in the structure. Furthermore, iodine is more preferable because the energy band gap of the organic-inorganic perovskite compound becomes narrow.
- the organic / inorganic perovskite compound preferably has a cubic structure in which a metal atom M is located at the body center, an organic molecule R is located at each vertex, and a halogen atom or a chalcogen atom X is located at the face center.
- the photoelectric conversion layer may further contain an organic semiconductor or an inorganic semiconductor in addition to the organic / inorganic perovskite compound as long as the effects of the present invention are not impaired.
- the organic semiconductor or inorganic semiconductor here may serve as an electron transport layer or a hole transport layer.
- organic semiconductor examples include compounds having a thiophene skeleton such as poly (3-alkylthiophene).
- conductive polymers having a polyparaphenylene vinylene skeleton, a polyvinyl carbazole skeleton, a polyaniline skeleton, a polyacetylene skeleton, and the like can be given.
- a compound having a porphyrin skeleton such as a phthalocyanine skeleton, a naphthalocyanine skeleton, a pentacene skeleton, or a benzoporphyrin skeleton, a spirobifluorene skeleton, or the like, or a carbon-containing material such as a carbon nanotube, graphene, or fullerene that may be surface-modified.
- a porphyrin skeleton such as a phthalocyanine skeleton, a naphthalocyanine skeleton, a pentacene skeleton, or a benzoporphyrin skeleton, a spirobifluorene skeleton, or the like, or a carbon-containing material such as a carbon nanotube, graphene, or fullerene that may be surface-modified.
- the inorganic semiconductor examples include titanium oxide, zinc oxide, indium oxide, tin oxide, gallium oxide, tin sulfide, indium sulfide, zinc sulfide, CuSCN, Cu 2 O, CuI, MoO 3 , V 2 O 5 , WO 3 , MoS 2, MoSe 2, Cu 2 S , and the like.
- the photoelectric conversion layer may be a thin film organic semiconductor or a laminate in which an inorganic semiconductor portion and a thin film organic / inorganic perovskite compound portion are laminated, an organic semiconductor or A composite film in which an inorganic semiconductor site and an organic inorganic perovskite compound site are combined may be used.
- a laminated body is preferable in that the production method is simple, and a composite film is preferable in that the charge separation efficiency in the organic semiconductor or the inorganic semiconductor can be improved.
- the preferable lower limit of the thickness of the thin-film organic / inorganic perovskite compound portion is 5 nm, and the preferable upper limit is 5000 nm.
- the thickness is 5 nm or more, light can be sufficiently absorbed, and the photoelectric conversion efficiency is increased. If the said thickness is 5000 nm or less, since it can suppress that the area
- the more preferable lower limit of the thickness is 10 nm, the more preferable upper limit is 1000 nm, the still more preferable lower limit is 20 nm, and the still more preferable upper limit is 500 nm.
- Hole transport layer The material of the hole transport layer is not particularly limited, and examples thereof include a P-type conductive polymer, a P-type low molecular organic semiconductor, a P-type metal oxide, a P-type metal sulfide, a surfactant, and the like.
- the preferable lower limit of the thickness of the hole transport layer is 1 nm, and the preferable upper limit is 2000 nm. If the thickness is 1 nm or more, electrons can be sufficiently blocked. If the said thickness is 2000 nm or less, it will become difficult to become resistance at the time of hole transport, and a photoelectric conversion efficiency will become high.
- the more preferable lower limit of the thickness is 3 nm, the more preferable upper limit is 1000 nm, the still more preferable lower limit is 5 nm, and the still more preferable upper limit is 500 nm.
- Resin layer is a planarization layer provided for planarizing the upper surface of the solar cell.
- Resin which comprises a resin layer is not specifically limited, A thermoplastic resin, a thermosetting resin, or a photocurable resin may be sufficient.
- thermoplastic resin examples include butyl rubber, polyester, polyurethane, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polyvinyl alcohol, polyvinyl acetate, ABS resin, polybutadiene, polyamide, polycarbonate, polyimide, polyisobutylene, and cycloolefin resin. Is mentioned.
- thermosetting resin examples include an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a melamine resin, and a urea resin.
- Examples of the photocurable resin include an epoxy resin, an acrylic resin, a vinyl resin, and an ene-thiol resin.
- a resin having an alicyclic skeleton is preferable.
- the method for forming the resin layer is not particularly limited, and can be formed by screen printing, gravure printing, offset gravure, or flexographic printing.
- the thickness of the resin layer is not particularly limited, but is preferably smaller than the thickness of the auxiliary wiring.
- the thickness of the resin layer can be, for example, 0.1 ⁇ m to 5 ⁇ m.
- the resin layer may contain a wiring corrosion inhibitor.
- wiring corrosion inhibitors include, but are not limited to, azoles such as imidazole, triazole, tetrazole, oxazole, and thiadiazole, alkylthiol, thioglycolic acid derivative, and mercaptopropionic acid derivative.
- Compounds such as thiols, thioethers, tetrazaindenes, pyrimidines, and triazines can be used.
- the inorganic layer is a barrier layer for suppressing the penetration of water vapor into the interior.
- a material which comprises an inorganic layer For example, it is preferable that the metal oxide, metal nitride, or metal oxynitride is included.
- the metal in the metal oxide, metal nitride or metal oxide is not particularly limited.
- Si, Al, Zn, Sn, In, Ti, Mg, Zr, Ni, Ta, W, Cu, or these metals are mainly used. Can be mentioned. Of these, metal oxides and metal nitrides containing Si, Al, Zn, or Sn are preferable.
- the gas barrier property can be further enhanced.
- a metal oxide or metal nitride containing Zn and Sn is used, flexibility can be further enhanced.
- a metal oxide or metal nitride containing at least one of Si and Al, Zn, and Sn is more preferable to use as a material constituting the inorganic layer.
- a refractive index gradient film in which the refractive index continuously changes from n1 to n2 (n1 ⁇ n2) from one surface to the other surface is used as the inorganic layer. May be.
- the method for forming the inorganic layer is not particularly limited, and examples thereof include a sputtering method, a vapor deposition method, an ion plating method, a CVD method, an ALD method, a spray CVD method, and a mist CVD method.
- the thickness of the inorganic layer is not particularly limited, but is preferably 30 nm to 3 ⁇ m, and more preferably 50 nm to 1 ⁇ m.
- the material constituting the auxiliary wiring and the first and second terminals is not particularly limited as long as it is a conductive material. However, it is preferable to use a metal or an alloy such as Cu or Ag. By using this kind of metal or alloy, the cost can be reduced and the electrical resistance of the electrical connection portion can be lowered, and more electric power can be taken out.
- the formation method of the auxiliary wiring and the first and second terminals is not particularly limited, and can be formed by, for example, screen printing, gravure printing, offset gravure, flexographic printing, photolithography, ink jet, or dispenser.
- the thickness of the auxiliary wiring is not particularly limited, but can be, for example, 1 to 10 ⁇ m.
- the auxiliary wiring preferably has a lattice shape in plan view.
- the line width of the auxiliary wiring is preferably 10 ⁇ m to 5 mm, and the interval between the auxiliary wirings is preferably 50 ⁇ m to 20 mm.
- the insulating material constituting the insulating layer is not particularly limited. That is, an organic insulating material may be used.
- an inorganic insulating material may be used. Examples of such an inorganic insulating material include inorganic oxides such as SiO 2 , Al 2 O 3 , and ZrO, glass, crease, and the like. Further, if the heat resistance is sufficiently good, an organic insulating material may be used. Examples of such an organic insulating material include thermosetting polyimide.
- the insulating layer can be formed by printing and baking an insulating material on the first electrode.
- the method for forming the insulating layer is not limited to this.
- an appropriate printing method such as screen printing, gravure printing, offset gravure printing, flexographic printing, or the like can be used.
- the dimensions of the insulating layer are not particularly limited.
- the height of the insulating layer is desirably about 1 ⁇ m to 10 ⁇ m, and the width is desirably about 50 ⁇ m to 5 mm, more preferably about 100 ⁇ m to 3 mm.
- the present invention is characterized in that the auxiliary wiring of the solar battery cell is provided so as to be embedded in the resin layer. Therefore, the stacked form of each solar battery cell part and the material of each layer are particularly limited. Is not to be done. Therefore, the configuration of the solar battery cell itself in the solar battery of the present invention can be modified as appropriate.
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Abstract
Description
図1は、本発明の第1の実施形態に係る太陽電池を示す模式的断面図である。また、図2は、本発明の第1の実施形態に係る太陽電池の補助配線部分を拡大して示す模式的平面図である。
図3は、本発明の第2の実施形態に係る太陽電池を示す模式的断面図である。図3に示すように、太陽電池21では、無機層10に第2の端子12が接合されている。第2の端子12は、補助配線8及び樹脂層9の一部が設けられている部分の上方に設けられている。第1の端子11は、第2の端子12が設けられている部分の下方に設けられている。第1の端子11は、第1の電極2と電気的に接合されている。その場合、第1の端子が延長されて、接続されている別の太陽電池における第2の端子としてもよい。第1の端子11は、設けずともよく、第1の電極2自体を外部と電気的に接続してもよい。
図4は、本発明の第3の実施形態に係る太陽電池を示す模式的断面図である。
第1及び第2の電極は、適宜の導電性材料を用いて形成すればよい。このような材料としては、例えば、FTO(フッ素ドープ酸化スズ)、ナトリウム、ナトリウム-カリウム合金、リチウム、マグネシウム、アルミニウム、マグネシウム-銀混合物、マグネシウム-インジウム混合物、アルミニウム-リチウム合金、Al/Al2O3混合物、Al/LiF混合物、金等の金属、CuI、ITO(インジウムスズ酸化物)、SnO2、AZO(アルミニウム亜鉛酸化物)、IZO(インジウム亜鉛酸化物)、GZO(ガリウム亜鉛酸化物)等の導電性透明材料、導電性透明ポリマー、金属箔等が挙げられる。これらの材料は単独で用いられてもよく、2種以上が併用されてもよい。第1の電極は、金属箔であることが好ましい。
第1及び第2の電子輸送層の材料は特に限定されず、例えば、N型導電性高分子、N型低分子有機半導体、N型金属酸化物、N型金属硫化物、ハロゲン化アルカリ金属、アルカリ金属、界面活性剤等が挙げられ、具体的には例えば、シアノ基含有ポリフェニレンビニレン、ホウ素含有ポリマー、バソキュプロイン、バソフェナントレン、ヒドロキシキノリナトアルミニウム、オキサジアゾール化合物、ベンゾイミダゾール化合物、ナフタレンテトラカルボン酸化合物、ペリレン誘導体、ホスフィンオキサイド化合物、ホスフィンスルフィド化合物、フルオロ基含有フタロシアニン、酸化チタン、酸化亜鉛、酸化インジウム、酸化スズ、酸化ガリウム、硫化スズ、硫化インジウム、硫化亜鉛等が挙げられる。
光電変換層は、一般式R-M-X3(但し、Rは有機分子、Mは金属原子、Xはハロゲン原子又はカルコゲン原子である。)で表される有機無機ペロブスカイト化合物を含む。光電変換層に上記有機無機ペロブスカイト化合物を用いることにより、太陽電池1の光電変換効率を向上させることができる。
ホール輸送層の材料は特に限定されず、例えば、P型導電性高分子、P型低分子有機半導体、P型金属酸化物、P型金属硫化物、界面活性剤等が挙げられ、具体的には例えば、ポリエチレンジオキシチオフェンのポリスチレンスルホン酸付加物、カルボキシル基含有ポリチオフェン、フタロシアニン、ポルフィリン、酸化モリブデン、酸化バナジウム、酸化タングステン、酸化ニッケル、酸化銅、酸化スズ、硫化モリブデン、硫化タングステン、硫化銅、硫化スズ等、フルオロ基含有ホスホン酸、カルボニル基含有ホスホン酸、CuSCN、CuI等の銅化合物、表面修飾されていてもよいカーボンナノチューブ、グラフェン等のカーボン含有材料等が挙げられる。
樹脂層は、太陽電池の上面を平坦化するために設けられている平坦化層である。樹脂層を構成する樹脂は、特に限定されず、熱可塑性樹脂でも熱硬化性樹脂でも光硬化性樹脂でもよい。
無機層は、水蒸気の内部への浸入を抑制するためのバリア層である。無機層を構成する材料としては、特に限定されないが、例えば、金属酸化物、金属窒化物または金属酸窒化物を含んでいることが好ましい。
補助配線並びに第1及び第2の端子を構成する材料としては、導電性材料である限り、特に限定されるものではない。もっとも、好ましくは、CuやAg等の金属もしくは合金を用いることが好ましい。この種の金属もしくは合金を用いることによりコストの低減と、電気的接続部分の電気抵抗を低め、より大きな電力を取り出すことができる。
絶縁層を構成する絶縁性材料は特に限定されない。すなわち、有機絶縁性材料を用いてもよい。また、無機絶縁性材料を用いてもよい。このような無機絶縁性材料としては、SiO2、Al2O3、ZrO等の無機酸化物、ガラス、クレースト等を挙げることができる。また、耐熱性が十分良好であれば、有機絶縁性材料を用いてもよい。このような有機絶縁性材料としては、例えば熱硬化性ポリイミド等を挙げることができる。
2…第1の電極
3…第1の電子輸送層
4…第2の電子輸送層
5…光電変換層
6…ホール輸送層
7…第2の電極
8,8A,8B…補助配線
9…樹脂層
10…無機層
11,12…第1,第2の端子
13…絶縁層
Claims (10)
- 第1の電極と、
前記第1の電極と対向するように配置されている第2の電極と、
前記第1の電極と、前記第2の電極との間に配置されており、有機無機ペロブスカイト化合物を含む光電変換層と、
前記第2の電極上に設けられた、複数の補助配線と、
前記第2の電極上に設けられており、かつ前記複数の補助配線間を埋めるように設けられた、樹脂層と、
前記複数の補助配線及び前記樹脂層を覆うように設けられた無機層と、
を備える、太陽電池。 - 前記複数の補助配線の厚みが、前記樹脂層の厚みより厚い、請求項1に記載の太陽電池。
- 前記第1の電極に接続されている第1の端子と、前記複数の補助配線に接続されている第2の端子とをさらに備える、請求項1又は2に記載の太陽電池。
- 前記無機層が、導電性材料により構成されており、前記無機層上に前記第2の端子が設けられている、請求項3に記載の太陽電池。
- 前記第2の電極が、直接的又は間接的に前記光電変換層上に積層された積層構造を形成しており、
前記積層構造の外周面を覆うように設けられている絶縁層をさらに備える、請求項1~4のいずれか1項に記載の太陽電池。 - 前記複数の補助配線のうち一部の補助配線が、前記絶縁層の上面に至っており、
前記絶縁層上に、前記補助配線を介して、前記第2の端子が設けられている、請求項5に記載の太陽電池。 - 前記有機無機ペロブスカイト化合物が、一般式R-M-X3(但し、Rは有機分子、Mは金属原子、Xはハロゲン原子またはカルコゲン原子である。)で表される、請求項1~6のいずれか1項に記載の太陽電池。
- 前記樹脂層が、配線腐食防止剤を含む、請求項1~7のいずれか1項に記載の太陽電池。
- 前記第1の電極が、金属箔により構成されている、請求項1~8のいずれか1項に記載の太陽電池。
- 前記第1の電極及び前記光電変換層の間に配置された電子輸送層と、前記光電変換層及び前記第2の電極の間に配置されたホール輸送層とをさらに備える、請求項1~9のいずれか1項に記載の太陽電池。
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- 2016-03-17 CN CN201680012526.9A patent/CN107408630B/zh active Active
- 2016-03-17 WO PCT/JP2016/058458 patent/WO2016152704A1/ja active Application Filing
- 2016-03-17 AU AU2016237482A patent/AU2016237482B2/en active Active
- 2016-03-17 EP EP16768607.0A patent/EP3276694A4/en active Pending
- 2016-03-17 JP JP2016517566A patent/JP6034540B1/ja active Active
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WO2018156987A1 (en) * | 2017-02-24 | 2018-08-30 | Epic Battery Inc. | Stable perovskite solar cell |
US10457148B2 (en) | 2017-02-24 | 2019-10-29 | Epic Battery Inc. | Solar car |
JP2018147956A (ja) * | 2017-03-02 | 2018-09-20 | 積水化学工業株式会社 | 太陽電池 |
JP2022075784A (ja) * | 2017-03-02 | 2022-05-18 | 積水化学工業株式会社 | 太陽電池及び太陽電池の製造方法 |
JP2018163939A (ja) * | 2017-03-24 | 2018-10-18 | 積水化学工業株式会社 | 太陽電池 |
US10587221B2 (en) | 2017-04-03 | 2020-03-10 | Epic Battery Inc. | Modular solar battery |
US11489082B2 (en) | 2019-07-30 | 2022-11-01 | Epic Battery Inc. | Durable solar panels |
Also Published As
Publication number | Publication date |
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AU2016237482B2 (en) | 2019-08-15 |
US20180040841A1 (en) | 2018-02-08 |
JP6034540B1 (ja) | 2016-11-30 |
CN107408630A (zh) | 2017-11-28 |
EP3276694A1 (en) | 2018-01-31 |
EP3276694A4 (en) | 2018-11-07 |
JPWO2016152704A1 (ja) | 2017-04-27 |
AU2016237482A1 (en) | 2017-07-27 |
CN107408630B (zh) | 2020-03-03 |
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