WO2013127155A1 - Cmos图像传感器像素及其控制时序 - Google Patents
Cmos图像传感器像素及其控制时序 Download PDFInfo
- Publication number
- WO2013127155A1 WO2013127155A1 PCT/CN2012/079435 CN2012079435W WO2013127155A1 WO 2013127155 A1 WO2013127155 A1 WO 2013127155A1 CN 2012079435 W CN2012079435 W CN 2012079435W WO 2013127155 A1 WO2013127155 A1 WO 2013127155A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pixel
- column
- pixels
- photodiode
- transistor
- Prior art date
Links
- 239000002184 metal Substances 0.000 claims abstract description 78
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/745—Circuitry for generating timing or clock signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
Abstract
Description
Claims (8)
- 一种CMOS图像传感器像素,其特征在于:包括由多组像素单元构成的像素阵列,每组像素单元包括由4个像素排列成的2X2像素阵列结构,其中第一列和第二列中的两个像素分别在列内共享选择晶体管、源跟随晶体管、复位晶体管和漂浮有源区,并且第一列和第二列形成相互交错式排列结构;所述多组像素单元在垂直和水平方向上排列成为二维像素阵列,所述二维像素阵列中同行像素通过第二层金属连线实现器件互连,同列像素通过第一层金属连线实现器件互连。
- 根据权利要求1所述的CMOS图像传感器像素,其特征在于:所述第一列中的两个像素的器件的布置方式是:选择晶体管(SX1)、源跟随晶体管(SF1)和复位晶体管(RX1)位于像素(01)的光电二极管(PD01)和像素(11)的光电二极管(PD11)之间;所述第二列中的两个像素的器件的布置方式是:选择晶体管(SX2)、源跟随晶体管(SF2)和复位晶体管(RX2)位于像素(12)的光电二极管(PD12)和像素(22)的光电二极管(PD22)之间。
- 根据权利要求2所述的CMOS图像传感器像素,其特征在于:所述第一列中的两个像素的器件的布置方式中,选择晶体管(SX1)位于光电二极管(PD01)的左上侧和光电二极管(PD11)的左下侧,并且位于源跟随晶体管(SF1)的左侧;所述第二列中的两个像素的器件的布置方式中,选择晶体管(SX2)位于光电二极管(PD12)的右上侧和光电二极管(PD22)的右下侧,并且位于源跟随晶体管(SF2)的右侧。
- 根据权利要求3所述的CMOS图像传感器像素,其特征在于:所述第一列中的两个像素的器件的布置方式中,源跟随晶体管(SF1)位于光电二极管(PD01)的正上方和光电二极管(PD11)的正下方;所述第二列中的两个像素的器件的布置方式中,源跟随晶体管(SF2)位于光电二极管(PD11)的正上方和光电二极管(PD22)的正下方。
- 根据权利要求4所述的CMOS图像传感器像素,其特征在于:所述第一列中的两个像素的器件的布置方式中,漂浮有源区(FD1)位于像素(01)的光电二极管(PD01)和像素(11)的光电二极管(PD11)之间,并且位于复位晶体管(RX1)的左侧;所述第二列中的两个像素的器件的布置方式中,漂浮有源区(FD2)位于像素(12)的光电二极管(PD12)和像素(22)的光电二极管(PD22)之间,并且位于复位晶体管(RX2)的右侧。
- 根据权利要求5所述的CMOS图像传感器像素,其特征在于:所述第一列中的两个像素的器件的布置方式中,漂浮有源区(FD1)与源跟随晶体管(SF1)栅极用第一层金属连线连接;所述第二列中的两个像素的器件的布置方式中,漂浮有源区(FD2)与源跟随晶体管(SF2)栅极用第一层金属连线连接。
- 一种权利要求1至6任一项所述的CMOS图像传感器像素的控制时序,其特征在于:所述控制时序包括CMOS图像传感器像素阵列行译码器时序和列控制器时序。
- 根据权利要求7所述的CMOS图像传感器像素的控制时序,其特征在于:所述第一层金属连线为列电源控制线和列信号输出线也为列控制器时序控制线;所述第二层金属连线为行译码器时序输出控制线。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020137020099A KR20130135293A (ko) | 2012-02-27 | 2012-07-31 | Cmos 이미지 센서 화소 및 그의 제어 타이밍시퀀스 |
JP2014501438A JP5735169B2 (ja) | 2012-02-27 | 2012-07-31 | Cmosイメージセンサ画素およびその制御シーケンス |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210047503.5 | 2012-02-27 | ||
CN201210047503.5A CN102595057B (zh) | 2012-02-27 | 2012-02-27 | Cmos图像传感器像素及其控制时序 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013127155A1 true WO2013127155A1 (zh) | 2013-09-06 |
Family
ID=46483221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2012/079435 WO2013127155A1 (zh) | 2012-02-27 | 2012-07-31 | Cmos图像传感器像素及其控制时序 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5735169B2 (zh) |
KR (1) | KR20130135293A (zh) |
CN (1) | CN102595057B (zh) |
WO (1) | WO2013127155A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102595057B (zh) * | 2012-02-27 | 2014-09-24 | 北京思比科微电子技术股份有限公司 | Cmos图像传感器像素及其控制时序 |
CN102856339B (zh) * | 2012-09-24 | 2015-09-02 | 北京思比科微电子技术股份有限公司 | Cmos图像传感器列共享像素单元及像素阵列 |
CN103165636B (zh) * | 2013-03-21 | 2015-10-21 | 北京思比科微电子技术股份有限公司 | Cmos图像传感器的像素单元组及cmos图像传感器 |
CN103391407B (zh) * | 2013-07-31 | 2016-08-17 | 北京思比科微电子技术股份有限公司 | 一种cmos图像传感器的像素结构及该图像传感器 |
CN104465690B (zh) * | 2014-12-26 | 2018-01-26 | 上海集成电路研发中心有限公司 | 版图、像素单元结构及其制备方法 |
TWI596946B (zh) * | 2016-08-18 | 2017-08-21 | 友達光電股份有限公司 | 訊號讀取電路 |
JP7210441B2 (ja) * | 2017-06-02 | 2023-01-23 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
JP7023659B2 (ja) | 2017-09-29 | 2022-02-22 | キヤノン株式会社 | 撮像装置、撮像システム、移動体 |
KR102551862B1 (ko) * | 2018-01-29 | 2023-07-06 | 에스케이하이닉스 주식회사 | 이미지 센서 |
KR102472591B1 (ko) * | 2018-01-29 | 2022-12-01 | 에스케이하이닉스 주식회사 | 이미지 센서 |
CN109040624B (zh) * | 2018-09-06 | 2021-01-05 | 思特威(上海)电子科技有限公司 | 像素电路及读取方法 |
WO2022102471A1 (ja) * | 2020-11-12 | 2022-05-19 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007189085A (ja) * | 2006-01-13 | 2007-07-26 | Sony Corp | 固体撮像装置 |
CN101110439A (zh) * | 2006-07-19 | 2008-01-23 | 三星电子株式会社 | 互补金属氧化物半导体图像传感器及用其的图像传感方法 |
CN101641962A (zh) * | 2006-10-30 | 2010-02-03 | 宽银幕电影成像有限责任公司 | 采用具有错位像素的多个芯片的扫描成像器 |
US20100148037A1 (en) * | 2008-12-12 | 2010-06-17 | Jan Bogaerts | Pixel array with shared readout circuitry |
CN102158663A (zh) * | 2011-04-15 | 2011-08-17 | 北京思比科微电子技术股份有限公司 | Cmos图像传感器像素及其控制时序 |
CN102595057A (zh) * | 2012-02-27 | 2012-07-18 | 北京思比科微电子技术股份有限公司 | Cmos图像传感器像素及其控制时序 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4292426B2 (ja) * | 2007-05-15 | 2009-07-08 | ソニー株式会社 | 撮像装置および撮像データ補正方法 |
-
2012
- 2012-02-27 CN CN201210047503.5A patent/CN102595057B/zh not_active Expired - Fee Related
- 2012-07-31 WO PCT/CN2012/079435 patent/WO2013127155A1/zh active Application Filing
- 2012-07-31 JP JP2014501438A patent/JP5735169B2/ja active Active
- 2012-07-31 KR KR1020137020099A patent/KR20130135293A/ko active Search and Examination
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007189085A (ja) * | 2006-01-13 | 2007-07-26 | Sony Corp | 固体撮像装置 |
CN101110439A (zh) * | 2006-07-19 | 2008-01-23 | 三星电子株式会社 | 互补金属氧化物半导体图像传感器及用其的图像传感方法 |
CN101641962A (zh) * | 2006-10-30 | 2010-02-03 | 宽银幕电影成像有限责任公司 | 采用具有错位像素的多个芯片的扫描成像器 |
US20100148037A1 (en) * | 2008-12-12 | 2010-06-17 | Jan Bogaerts | Pixel array with shared readout circuitry |
CN102158663A (zh) * | 2011-04-15 | 2011-08-17 | 北京思比科微电子技术股份有限公司 | Cmos图像传感器像素及其控制时序 |
CN102595057A (zh) * | 2012-02-27 | 2012-07-18 | 北京思比科微电子技术股份有限公司 | Cmos图像传感器像素及其控制时序 |
Also Published As
Publication number | Publication date |
---|---|
JP2014514822A (ja) | 2014-06-19 |
CN102595057B (zh) | 2014-09-24 |
JP5735169B2 (ja) | 2015-06-17 |
KR20130135293A (ko) | 2013-12-10 |
CN102595057A (zh) | 2012-07-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2013127155A1 (zh) | Cmos图像传感器像素及其控制时序 | |
WO2012139322A1 (zh) | Cmos图像传感器像素及其控制时序 | |
US9866771B2 (en) | Solid-state imaging device, signal processing method of solid-state imaging device, and electronic apparatus | |
JP5526928B2 (ja) | 固体撮像装置および撮像装置 | |
TW201911547A (zh) | 光學感測器的像素以及光學感測器的操作方法 | |
KR101377063B1 (ko) | 기판 적층형 이미지 센서의 글로벌 셔터를 위한 픽셀회로 | |
CN103858235B (zh) | 固态图像传感器和电子设备 | |
JP2014120858A (ja) | 固体撮像装置 | |
JP2016058532A (ja) | 固体撮像素子、並びに、電子機器 | |
WO2014044003A1 (zh) | Cmos图像传感器列共享像素单元及像素阵列 | |
WO2014044004A1 (zh) | Cmos图像传感器列共享2×2像素单元及像素阵列 | |
WO2020132913A1 (zh) | 指纹识别装置和指纹识别方法 | |
WO2024046196A1 (zh) | 图像传感器及电子设备 | |
EP3471401B1 (en) | Solid-state imaging element, imaging device, and method for controlling solid-state imaging element | |
US8853606B2 (en) | Image sensor cell, image sensor including image sensor array including plurality of the image sensor cells, and camera system including the image sensor | |
CN111146222A (zh) | 一种基于多晶圆堆叠技术的多区块像元阵列 | |
CN216852142U (zh) | 像素阵列和图像传感器 | |
CN218352630U (zh) | 图像传感器及版图结构 | |
CN103391408B (zh) | 一种cmos图像传感器的像素结构及该图像传感器 | |
CN217470115U (zh) | 像素阵列及图像传感器 | |
CN103391407A (zh) | 一种cmos图像传感器的像素结构及该图像传感器 | |
CN117395533A (zh) | 像素阵列及其控制方法、图像传感器 | |
CN116419080A (zh) | 像素阵列、图像传感器及其控制方法 | |
TW201114258A (en) | Solid-state imaging device, signal processing method of solid-state imaging device, and electronic apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2014501438 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20137020099 Country of ref document: KR Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12869773 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 12869773 Country of ref document: EP Kind code of ref document: A1 |