WO2013121701A1 - Film de protection destiné à une plaquette de semi-conducteur et procédé de fabrication d'une puce de semi-conducteur - Google Patents

Film de protection destiné à une plaquette de semi-conducteur et procédé de fabrication d'une puce de semi-conducteur Download PDF

Info

Publication number
WO2013121701A1
WO2013121701A1 PCT/JP2013/000347 JP2013000347W WO2013121701A1 WO 2013121701 A1 WO2013121701 A1 WO 2013121701A1 JP 2013000347 W JP2013000347 W JP 2013000347W WO 2013121701 A1 WO2013121701 A1 WO 2013121701A1
Authority
WO
WIPO (PCT)
Prior art keywords
protective film
mass
parts
resin
semiconductor wafer
Prior art date
Application number
PCT/JP2013/000347
Other languages
English (en)
Japanese (ja)
Inventor
市六　信広
Original Assignee
信越化学工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 信越化学工業株式会社 filed Critical 信越化学工業株式会社
Priority to KR1020147022574A priority Critical patent/KR20140133519A/ko
Priority to CN201380009159.3A priority patent/CN104137229B/zh
Priority to SG11201404022UA priority patent/SG11201404022UA/en
Publication of WO2013121701A1 publication Critical patent/WO2013121701A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J171/00—Adhesives based on polyethers obtained by reactions forming an ether link in the main chain; Adhesives based on derivatives of such polymers
    • C09J171/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
    • C09J171/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2207/00—Properties characterising the ingredient of the composition
    • C08L2207/06—Properties of polyethylene
    • C08L2207/068—Ultra high molecular weight polyethylene
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2461/00—Presence of condensation polymers of aldehydes or ketones
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2463/00—Presence of epoxy resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2479/00—Presence of polyamine or polyimide
    • C09J2479/08—Presence of polyamine or polyimide polyimide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Definitions

  • the present invention relates to a semiconductor wafer protective film and a method for manufacturing a semiconductor chip.
  • a flip chip connection method is used.
  • a semiconductor chip is obtained by dicing a wafer having a circuit and connection bumps formed on the surface, and after the surface of the chip is connected to a substrate, resin sealing or the like is used to protect the semiconductor chip. To do.
  • Patent Document 3 one using a reinforcing material having a low linear expansion coefficient for preventing twisting of the IC card
  • Patent Document 4 one using a reinforcing material for preventing cracking of the semiconductor chip in the IC card are known.
  • the above-mentioned protective film for chips is used by sticking to the back surface of the wafer. Therefore, it is this protective film that is finally cut by the rotary blade in the dicing process.
  • the resin component contained in the protective film has stretchability, it is difficult to cut, and there is a problem that the rotary blade is clogged to vibrate the rotary blade and damage the wafer.
  • the quality of the product can be improved by multiple curing processes, adhesive sticking out, displacement and inclination of the reinforcing layer, and variation in reinforcing strength due to uneven thickness of the adhesive. Variations and a significant decrease in productivity occur.
  • the present invention has been made in view of the above circumstances, and an object thereof is to provide a semiconductor wafer protective film having excellent cutting characteristics by a dicer and a method for manufacturing a highly productive semiconductor chip.
  • a protective film for a semiconductor wafer comprising a base film and a protective film formed on the upper side of the base film, wherein the protective film contains the following components (A) to (E):
  • a protective film for a semiconductor wafer is provided.
  • E fibrous inorganic filler: 25 to 5000 parts by mass
  • Such a protective film of the protective film for a semiconductor wafer has a fibrous inorganic filler so that chipping can be prevented when a semiconductor chip is obtained by dicing the semiconductor wafer.
  • the protective film of this protective film for semiconductor wafers has a high bending strength, and can prevent chip cracking due to bending stress when used in the market.
  • the protective film comprises a reinforcing layer and an adhesive layer
  • the adhesive layer preferably contains the following components (A) to (D), and the reinforcing layer preferably contains the following component (E).
  • the protective film is composed of two layers of the reinforcing layer and the adhesive layer, the chipping prevention and the bending strength of the semiconductor chip are further improved, and high productivity can be realized.
  • the phenoxy resin in the component (A) is a bisphenol A type phenoxy resin or a bisphenol F type phenoxy resin
  • the epoxy resin of the component (B) is a liquid bisphenol A type epoxy resin or a liquid bisphenol F type epoxy resin. Preferably there is.
  • the protective film for a semiconductor wafer is further excellent in cutting characteristics by a dicer.
  • the present invention also relates to a method of manufacturing a semiconductor chip by dicing a semiconductor wafer, wherein the semiconductor chip is attached to the back surface of the semiconductor wafer by attaching the protective film for the semiconductor wafer to the semiconductor wafer and dicing all at once.
  • a method for manufacturing a semiconductor chip is provided, wherein a semiconductor chip having a protective film of the same size as that of the semiconductor chip is manufactured.
  • the protective film of the present invention since the protective film has a fibrous inorganic filler, it can be easily cut by a dicer, chipping prevention and bending strength of the semiconductor chip are improved, and high productivity can be realized. it can.
  • the present inventors A protective film for a semiconductor wafer comprising a base film and a protective film formed on the upper side of the base film, wherein the protective film contains the following components (A) to (E): It has been found that the protective film for semiconductor wafers can be a protective film for semiconductor wafers having excellent cutting characteristics.
  • A At least one selected from the group consisting of phenoxy resin, polyimide resin, and (meth) acrylic resin: 100 parts by mass
  • B Epoxy resin: 5 to 200 parts by mass
  • C Fillers other than the fibrous inorganic filler: 100 to 400 parts by mass
  • D Epoxy resin curing catalyst: catalyst amount
  • E fibrous inorganic filler: 25 to 5000 parts by mass
  • At least one phenoxy resin selected from the group consisting of a phenoxy resin, a polyimide resin, and a (meth) acrylic resin is a resin derived from epichlorohydrin and bisphenol A or bisphenol F or the like.
  • the polystyrene equivalent weight average molecular weight measured by GPC is 10,000 to 200,000, more preferably 20,000 to 100,000, and most preferably 30,000 to 80,000.
  • the weight average molecular weight is equal to or higher than the lower limit value, it is easy to form a film, while when the weight average molecular weight is equal to or lower than the upper limit value, sufficient softness along the unevenness of the substrate surface having a fine circuit pattern is obtained. This is preferable.
  • phenoxy resin examples include those sold under the trade names PKHC, PKHH, and PKHJ (all manufactured by Sakai Chemical Co., Ltd.), and the commercial names Epicoat 4250, Epicoat 4275, and Epicoat 1255HX30 of bisphenol A and bisphenol F mixed types.
  • JER E1256 is preferably used in that it has the weight average molecular weight described above.
  • the phenoxy polymer has an epoxy group at the end, which reacts with the component (B) described later.
  • a polyimide resin what contains the following repeating unit can be used.
  • X is a tetravalent organic group containing an aromatic ring or an aliphatic ring
  • Y is a divalent organic group
  • q is an integer of 1 to 300.
  • the polystyrene equivalent weight average molecular weight measured by GPC is 10,000 to 200,000, more preferably 20,000 to 100,000, and most preferably 30,000 to 80,000.
  • the weight average molecular weight is equal to or higher than the lower limit value, it is easy to form a film, while when the weight average molecular weight is equal to or lower than the upper limit value, sufficient softness along the unevenness of the substrate surface having a fine circuit pattern is obtained. This is preferable.
  • the polyimide resin can be obtained by dehydrating and ring-closing a polyamic acid resin having the following repeating units by a conventional method. (Wherein X, Y and q are as defined above.)
  • the polyamic acid resin represented by the above formula has the following structural formula (3) (However, X has the same meaning as described above.)
  • a tetracarboxylic dianhydride represented by the following structural formula (4) H 2 N—Y—NH 2 (4) (However, Y has the same meaning as described above.) Can be obtained by reacting in a substantially equimolar amount in an organic solvent according to a conventional method.
  • examples of the tetracarboxylic dianhydride represented by the above formula (3) include the following, and these may be used in combination.
  • diamines represented by the above formula (4) preferably 1 to 80 mol%, more preferably 1 to 60 mol% is a diaminosiloxane compound represented by the following structural formula (5). It is desirable from the viewpoints of solubility in a solvent, adhesion to a substrate film, low elasticity, and flexibility.
  • R 1 is a divalent organic group having 3 to 9 carbon atoms, independently of each other, and R 2 and R 3 are each independently an unsubstituted or substituted monovalent carbon atom having 1 to 8 carbon atoms.
  • a hydrogen group, and m is an integer of 1 to 200.
  • R 1 that is a divalent organic group having 3 to 9 carbon atoms include, for example, — (CH 2 ) 3 —, — (CH 2 ) 4 —, —CH 2 CH (CH 3 ) —, — ( An alkylene group such as CH 2 ) 6 —, — (CH 2 ) 8 —,
  • An arylene group represented by any one of the following: an alkylene / arylene group, Oxyalkylene groups such as — (CH 2 ) 3 —O— and — (CH 2 ) 4 —O—,
  • a divalent hydrocarbon group which may contain an ether bond such as an oxyalkylene / arylene group represented by the formula:
  • R 2 or R 3 examples include alkyl groups such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, hexyl, cyclohexyl, 2-ethylhexyl, octyl and the like. Allyl group, propenyl group, isopropenyl group, butenyl group, isobutenyl group, alkenyl group such as hexenyl group, aryl group such as phenyl group, tolyl group, xylyl group, aralkyl group such as benzyl group, phenylethyl group, etc.
  • alkyl groups such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, hexyl, cyclohexyl, 2-ethylhexyl, oct
  • halogen atoms such as fluorine, bromine and chlorine, such as chloromethyl group, bromoethyl group, 3,3,3-trifluoro
  • halogen-substituted alkyl groups such as propyl group, and among them, methyl group and phenyl group are preferable.
  • a combination of two or more diaminosiloxane compounds can also be used.
  • Examples of the diamine represented by the above formula (4) other than the diaminosiloxane compound represented by the above formula (5) include p-phenylenediamine, m-phenylenediamine, 4,4′-diaminodiphenylmethane, and 4,4.
  • the polyimide resin has a phenolic hydroxyl group from the viewpoint of adhesiveness.
  • the phenolic hydroxyl group can be prepared by using a diamine compound having a phenolic hydroxyl group. Examples of such a diamine include those having the following structure.
  • A is any of the following groups:
  • B is any of the following groups: (In the formula, R 4 is independently of each other a hydrogen atom or a halogen atom such as fluorine, bromine or iodine, or an unsubstituted or substituted alkyl group, alkenyl group, alkynyl group, trifluoromethyl group, phenyl group or the like.
  • a and B may each be one kind alone.
  • R is a hydrogen atom, a halogen atom, or an unsubstituted or substituted monovalent hydrocarbon group.
  • Examples of the unsubstituted or substituted monovalent hydrocarbon group having 1 to 8 carbon atoms of R 4 are the same as those exemplified for R 2 and R 3 , and an ethynyl group, propynyl group, butynyl group. And alkynyl groups such as a hexynyl group.
  • R ′ is a hydrogen atom, a halogen atom such as fluorine, bromine or iodine, or an unsubstituted alkyl group, alkenyl group, alkynyl group, trifluoromethyl group, phenyl group or the like having 1 to 8 carbon atoms.
  • a halogen-substituted monovalent hydrocarbon group the substituents attached to each aromatic ring may be different
  • X is a single bond, a methylene group, or a propylene group, and n is as defined above. .
  • a diamine compound represented by the following formula (6) is particularly preferable.
  • the blending amount of the diamine compound having a phenolic hydroxyl group is preferably 5 to 60% by mass, particularly 10 to 40% by mass, based on the entire diamine compound.
  • a polyimide silicone resin having a blending amount in this range is used, a composition having a high adhesive force and forming a flexible adhesive layer can be obtained.
  • a monoamine having a phenolic hydroxyl group can also be used for introducing a phenolic hydroxyl group, and examples thereof include a monoamine having the following structure.
  • R 4 is the same as above, and the substituents attached to each aromatic ring may be different.
  • D may be used alone or in combination of two or more.
  • P is an integer from 1 to 3.
  • the amount is preferably 1 to 10 mol% based on the entire diamine compound.
  • the polyamic acid resin can be synthesized by dissolving the above starting materials in a solvent under an inert atmosphere and reacting them usually at 80 ° C. or less, preferably 0 to 40 ° C.
  • the obtained polyamic acid resin is usually heated to 100 to 200 ° C., preferably 150 to 200 ° C., whereby the acid amide portion of the polyamic acid resin is dehydrated and cyclized to synthesize the target polyimide resin. it can.
  • the solvent may not be one that can completely dissolve the starting material as long as it is inert to the resulting polyamic acid.
  • examples include tetrahydrofuran, 1,4-dioxane, cyclopentanone, cyclohexanone, ⁇ -butyrolactone, N-methylpyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide and dimethyl sulfoxide, preferably aprotic Polar solvents, particularly preferably N-methylpyrrolidone, cyclohexanone and ⁇ -butyrolactone. These solvents can be used singly or in combination of two or more.
  • dehydration ring closure In order to facilitate the dehydration ring closure described above, it is desirable to use an azeotropic dehydrating agent such as toluene or xylene. Further, dehydration ring closure can be performed at a low temperature using an acetic anhydride / pyridine mixed solution.
  • dicarboxylic acid anhydrides such as maleic anhydride and phthalic anhydride and / or aniline, n-butylamine, and monoamines having the above-mentioned phenolic hydroxyl groups are added.
  • the addition amount of dicarboxylic acid anhydride is usually 0 to 2 parts by mass per 100 parts by mass of tetracarboxylic dianhydride, and the addition amount of monoamine is usually 0 to 2 parts by mass per 100 parts by mass of diamine. Part.
  • the (meth) acrylic resin examples include (meth) acrylic acid ester copolymers composed of structural units derived from (meth) acrylic acid ester monomers and (meth) acrylic acid derivatives.
  • the (meth) acrylic acid ester monomer is preferably a (meth) acrylic acid alkyl ester having an alkyl group having 1 to 18 carbon atoms, such as methyl (meth) acrylate, ethyl (meth) acrylate, (meth) ) Propyl acrylate, butyl (meth) acrylate, etc. are used.
  • the (meth) acrylic acid derivative include (meth) acrylic acid, glycidyl (meth) acrylate, hydroxyethyl (meth) acrylate, and the like.
  • the weight average molecular weight of the (meth) acrylic resin is preferably 100,000 or more, more preferably 150,000 to 1,000,000.
  • the glass transition temperature of the (meth) acrylic resin is preferably 20 ° C. or less, more preferably about ⁇ 70 to 0 ° C., and has adhesiveness at room temperature (23 ° C.).
  • Epoxy resin is a resin different from the component (A), and preferably has an epoxy equivalent of 50 to 5000 g / eq, more preferably 100 to 500 g / eq.
  • epoxy resins include bisphenol A-type epoxy resins, bisphenol F-type epoxy resins (particularly liquid bisphenol A-type epoxy resins or liquid bisphenol F-type epoxy resins); phenols such as resorcinol, phenylanol novolak, and cresol novolak.
  • Glycidyl ethers examples include so-called alicyclic epoxides in which an epoxy is introduced by oxidizing a
  • bisphenol A type epoxy resin bisphenol F type epoxy resin (particularly liquid bisphenol A type epoxy resin or liquid bisphenol F type epoxy resin), o-cresol novolak type epoxy resin and phenol novolak type epoxy resin are preferably used. . Two or more of these epoxy resins may be used in combination.
  • the epoxy resin is blended in an amount of 5 to 200 parts by weight, preferably 10 to 200 parts by weight, more preferably 50 to 150 parts by weight, based on 100 parts by weight of component (A).
  • component (A) and the component (B) are blended at such a ratio, an appropriate tack is exhibited before curing, and a sticking operation to the wafer can be stably performed. An excellent protective film can be obtained.
  • the phenoxy resin in the component (A) is bisphenol A type phenoxy resin or bisphenol F type phenoxy resin
  • the epoxy resin of the component (B) is liquid bisphenol A It is preferably a type epoxy resin or a liquid bisphenol F type epoxy resin.
  • Component fillers include inorganic fillers other than fibrous inorganic fillers (non-fibrous inorganic fillers), such as silica, alumina, titanium oxide, carbon Conductive particles such as black and silver particles and silicone resin powder, for example, a crosslinked spherical dimethylpolysiloxane fine powder having a structure in which dimethylpolysiloxane is crosslinked (Japanese Patent Laid-Open No.
  • a crosslinked spherical polymethylsilsesquioxide Oxane fine powder JP-A-3-47848
  • fine powder obtained by coating the surface of a crosslinked spherical polysiloxane rubber with polymethylsilsesquioxane particles JP-A-7-196815, JP-A-9-20631) Gazette
  • the blending amount of the filler is 100 to 400 parts by mass, preferably 150 to 350 parts by mass with respect to 100 parts by mass of the component (A).
  • the blending amount is equal to or more than the lower limit value, low water absorption, low linear expansion, and the like, which are blending purposes of the filler, can be sufficiently achieved.
  • the semiconductor device fails the moisture absorption reliability test, and when the low linear expansion coefficient cannot be achieved, the linear expansion coefficient mismatch occurs when the composite of the protective film for semiconductor wafer and the silicon wafer is cured. Occurs, causing a large warp and subsequent dicing becomes impossible.
  • the content of the filler is preferably 30 to 80% by mass of the protective film.
  • the silica fused silica or crystalline silica is used.
  • the average particle diameter of silica is preferably 0.1 to 10 ⁇ m, more preferably 0.5 to 7 ⁇ m.
  • the average particle diameter of silica is within this range, good smoothness of the surface of the applied protective film (adhesive layer) can be obtained.
  • the thickness of the adhesive layer is often required to be 15 to 50 ⁇ m.
  • the average particle diameter of the silica is within the above range, this requirement is satisfied even if secondary agglomerated particles exist. Easy to fill.
  • Silicone rubber fine particles whose surface is coated with a polyorganosilsesquioxane resin can be produced by the method described in the above-mentioned publications (Japanese Patent Laid-Open Nos. 7-196815 and 9-20631), or Commercially available silicone composite powder KMP600 series (manufactured by Shin-Etsu Chemical Co., Ltd.) can be used. KMP600 is preferably used from the viewpoint of particle size.
  • the filler is preferably an inorganic filler, more preferably silica, and most preferably silica produced by a deflagration method.
  • the silica is easily wetted by the resin component and is surface-treated according to a conventional method.
  • a silane silane coupling agent
  • the alkoxysilane includes glycidoxymethyltrimethoxysilane, glycidoxymethyltriethoxysilane, ⁇ -glycidoxyethyltrimethoxysilane, ⁇ -glycidoxyethyltriethoxysilane, ⁇ - Glycidoxyethyltrimethoxysilane, ⁇ -glycidoxyethyltriethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropyltriethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, ⁇ - Glycidoxypropyl-glycidoxypropyltriethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldiethoxysilane, ⁇ -glycidoxybutyltrimethoxysilane,
  • Epoxy resin curing catalyst is preferably a type that cures when heated, so-called thermally activated latent epoxy resin curing agent. Examples include dicyandiamide, imidazole compounds, various onium salts, dibasic acid dihydrazide compounds, and the like, and two or more of these may be used in combination.
  • the amount of the curing catalyst may be an amount effective as a catalyst (catalytic amount), but is usually used in an amount of 0.1 to 20 parts by weight, preferably 1 to 12 parts by weight with respect to 100 parts by weight of the epoxy resin. Used part.
  • Fibrous inorganic filler As the fibrous inorganic filler, ceramic whisker such as glass fiber, calcium silicate fiber, potassium titanate fiber, carbon fiber, silicon nitride, potassium titanate, ceramic fiber, metal fiber, etc. Can be mentioned. Of these, glass fiber is most preferred. The form of the glass fiber is not particularly specified, and any of roving, strand, chopped strand, milled fiber, a pulverized strand called glass powder, and the like may be used.
  • the shape of the fibrous inorganic filler as the component (E) is not particularly limited.
  • the fiber diameter is preferably 10 to 100 ⁇ m, more preferably 15 to What is 60 micrometers is preferable.
  • the aspect ratio (fiber length / fiber diameter ratio) is preferably 3 or more, more preferably 5 or more in the molded body. If the fiber diameter is 10 ⁇ m or more, the production thereof is not likely to be difficult, and if it is 100 ⁇ m or less, the mechanical properties of the molded article, particularly the impact strength, is not liable to decrease, which is preferable. An aspect ratio of 3 or more is preferable because a sufficient reinforcing effect can be obtained.
  • a glass nonwoven fabric in which a fibrous inorganic filler is randomly distributed in the protective film a glass nonwoven fabric (glass nonwoven fabric, cumulus made by Japan Vilene Co., Ltd.) It is preferable to use a fiber knitted in a mesh shape (IPC standard 3313 glass cloth, etc., manufactured by Nittobo).
  • the matrix resin an epoxy resin, a polyamide resin, a phenol resin, or the like is preferably used because the protective film contains an epoxy resin as the component (B).
  • the fibrous inorganic filler may be randomly dispersed in the protective film, but the protective film has a two-layer structure of an adhesive layer and a reinforcing layer, and the fibrous inorganic filler is dispersed only in the reinforcing layer. Preferably it is.
  • a resin for the adhesive layer may be used.
  • the fibrous inorganic filler is dispersed in the protective film, at least one selected from the group consisting of the phenoxy resin, the polyimide resin, and the (meth) acrylic resin as the component (A) is 100 parts by mass. 25 to 5000 parts by mass are preferred. More preferably, it is 40 to 3000 parts by mass.
  • the protective film has a high linear expansion coefficient and is not likely to be greatly warped, and it is preferable that the bending strength is not lowered due to chipping during dicing. Further, when the blending amount is not more than the upper limit value, there is no fear that the smoothness of the adhesion surface of the protective film with respect to the silicon wafer is lowered, there is no possibility that the adhesion force is lowered, and the bending strength is high. .
  • the protective film of the present invention may contain an epoxy resin curing agent and various additives in addition to the components described above.
  • phenol resins for example, condensates of phenols such as alkylphenols, polyhydric phenols, naphthols and aldehydes, etc. are used, preferably phenol novolak resins, o-cresol novolak resins, p-cresol novolak resins.
  • T-butylphenol novolak resin, dicyclopentadiene cresol resin, polyparavinylphenol resin, bisphenol A type novolak resin, bisphenol F type novolak resin, or modified products thereof may be used.
  • Additives include pigments, dyes, etc. When these are blended and the protective film in the present invention is colored, the laser mark performance is improved. Furthermore, a silane coupling agent can be added for the purpose of improving the adhesion and adhesion between the protective film and the chip back surface. In addition, you may mix
  • the elastic modulus after curing of the protective film for a semiconductor wafer of the present invention is preferably 10 to 100 GPa. If the elastic modulus after curing is 10 GPa or more, the protective film for a semiconductor wafer can sufficiently withstand bending stress at the time of bending, and there is no possibility of causing a decrease in bending strength. In addition, when the elastic modulus is 100 GPa or less, there is no possibility that a large stress is generated on the silicon wafer side when the composite cured product of the semiconductor wafer protective film and the silicon wafer is warped, and a lot of chipping occurs. There is no risk of lowering the folding strength.
  • the protective film for semiconductor wafer in the present invention comprises a base film 1 and a protective film 2 formed on the base film 1 as shown in FIGS.
  • the protective film 2 contains the components (A) to (E) described above.
  • FIG. 1 shows a protective film 10 for a semiconductor wafer in which a fibrous inorganic filler 3 of component (E) is randomly dispersed in a protective film 2.
  • the protective film 2 is composed of a reinforcing layer 3 ′ and an adhesive layer 4, and the adhesive layer 4 contains the components (A) to (D), and the reinforcing layer 3 ′ (E) It contains a component.
  • the reinforcing layer 3 ′ glass cloth or the like is preferable.
  • the content of the fibrous inorganic filler is preferably 25 to 1000 parts by mass with respect to 100 parts by mass of the component (A).
  • the protective film 2 comprises a reinforcing layer 3 ′′ and an adhesive layer 4, and the adhesive layer 4 contains the components (A) to (D), and the reinforcing layer 3 ′ 'Contains the component (E).
  • the reinforcing layer 3 ′′ a prepreg (for example, a glass cloth impregnated with an epoxy resin) is preferable.
  • the content of the fibrous inorganic filler is preferably 1000 to 5000 parts by mass with respect to 100 parts by mass of the component (A).
  • the arrangement with respect to the semiconductor wafer is preferably an arrangement method in which the coefficient of linear expansion is small in order to prevent warpage, and is preferably a semiconductor wafer (not shown), an adhesive layer 4 and a reinforcing layer 3 ′′.
  • Examples of the method for producing the protective film for a semiconductor wafer of the present invention include the following (Method 1) to (Method 3), but are not limited to these methods.
  • Method 1 A fibrous inorganic filler (component (E)) is mixed and dispersed by a conventional method in an adhesive layer composition containing the components (A) to (D) dispersed in a solvent. Then, the protective film 2 is formed by coating on the base film 1 to form a protective film 10 for a semiconductor wafer in which the adhesive layer and the reinforcing layer are integrated (FIG. 1).
  • Method 2 A reinforcing layer 3 ′ composed of a network-like fibrous inorganic filler (component (E)) is disposed on the base film 1, and dispersed with a solvent from above (A) to (A) D) An adhesive layer composition containing the component is applied to produce a protective film 10 for a semiconductor wafer having a protective film 2 having a two-layer structure in which the adhesive layer 4 and the reinforcing layer 3 ′ are arranged in an inclined manner (FIG. 2). .
  • a composition obtained by mixing the corresponding components on the base film 1 is preferably 5 to 100 ⁇ m in thickness.
  • said composition can be apply
  • a polyethylene film, a polypropylene film, a polyvinyl chloride film, a polyethylene terephthalate film, a polyimide film, or the like is used as the base film 1.
  • a polyethylene terephthalate film or a polyimide film excellent in heat resistance is preferably used.
  • a silicone resin or the like may be applied to the surface of the base film to perform a release treatment, or a peelable layer may be formed between the base film 1 and the protective film 2.
  • the film thickness of the base film 1 is 5 to 200 ⁇ m, preferably 10 to 150 ⁇ m, particularly preferably about 20 to 100 ⁇ m.
  • the protective film for a semiconductor wafer is used, for example, by the following method. (1) The process of sticking the protective film of the protective film for semiconductor wafers in this invention on the back surface of the semiconductor wafer in which the circuit was formed in the surface, (2) The process of peeling the base film of the protective film for semiconductor wafers, (3) a step of curing the protective film by heating, (4) A step of dicing the semiconductor wafer and the protective film.
  • steps (3) and (4) may be performed in reverse order.
  • the dicing step (4) can be performed according to a conventional method using a dicing sheet.
  • a semiconductor chip having a protective film on the back surface is obtained by dicing.
  • the chip is picked up by a general-purpose means such as a collet and placed on the substrate.
  • a general-purpose means such as a collet and placed on the substrate.
  • composition for Forming Protective Layer In about 50 parts by mass of cyclohexanone, parts by mass (A) shown in Table 1 were dissolved. The obtained solution was mixed with other components in the amounts shown in Table 1 to obtain a composition having a solid content of about 70% by mass.
  • component Phenoxy resin Mw about 60,000, JER 1256 (made by Japan Epoxy Resin Co., Ltd.)
  • Polyimide resin 1 The synthesis method will be described later.
  • Acrylic resin 1 55 parts by weight of butyl acrylate, 15 parts by weight of methyl methacrylate, 20 parts by weight of glycidyl methacrylate, and 15 parts by weight of 2-hydroxyethyl acrylate (weight average molecular weight 900,000, glass transition temperature ⁇ 28 °C)
  • Component Epoxy resin RE310S (manufactured by Nippon Kayaku Co., Ltd.), viscosity at 25 ° C. and 15 Pa.
  • Synthetic reflux condenser of polyimide resin 1 Connected to a 25 ml moisture meter with a faucet, thermometer and stirrer equipped with a 1 liter separable flask, diaminosiloxane represented by the following structural formula (KF-8010, Shin-Etsu) Chemical Co., Ltd.) 49.01 parts by mass and 100 parts by mass of 2-methylpyrrolidone as a reaction solvent were added and stirred at 80 ° C. to disperse the diamine.
  • diaminosiloxane represented by the following structural formula (KF-8010, Shin-Etsu) Chemical Co., Ltd.) 49.01 parts by mass and 100 parts by mass of 2-methylpyrrolidone as a reaction solvent were added and stirred at 80 ° C. to disperse the diamine.
  • the obtained resin had a polystyrene equivalent weight average molecular weight of 55,000 and a functional group equivalent of 760 g / eq.
  • Adhesive layer composition liquids (Coating liquids 1 to 5) shown in Table 1 were prepared, and the layer thickness was 20 ⁇ m on the 115 ⁇ m epoxy prepreg reinforcing layer in the example and on the 50 ⁇ m SUS304 reinforcing layer in the comparative example.
  • the adhesive layer was applied as described above, and dried by heating at 110 ° C. for 10 minutes to form 135 and 70 ⁇ m protective films.
  • Example 6 75 ⁇ m glass cloth IPC standard 3313 was placed on a 38 ⁇ m PET film surface-treated with silicone, and coating liquid 1 in Table 1 was applied from above so that the adhesive layer had a thickness of 15 ⁇ m. The film was dried by heating at 110 ° C. for 10 minutes to form a 90 ⁇ m protective film.
  • Example 7 The glass fiber-containing coating solution 6 in Table 2 was applied on a 38 ⁇ m PET film surface-treated with silicone so that the protective film had a thickness of 50 ⁇ m, dried by heating at 110 ° C. for 10 minutes, and 50 ⁇ m A protective film was formed. (Note that the coating liquid 6 has a composition in which glass fibers are contained in the coating liquid 1.)
  • the protective film obtained was cured at 175 ° C. for 4 hours, and then a strip sample having a width of 5 mm and a length of 40 mm was prepared as a measurement sample.
  • a strip sample having a width of 5 mm and a length of 40 mm was prepared as a measurement sample.
  • Seiko Instruments DMA6100 data at 25 ° C. when the temperature was raised from 3 ° C./min from 1 ° C. to a strain width of 10 ⁇ m from 0 ° C. to 200 ° C. was taken as the tensile modulus.
  • the protective film obtained by the dicing test was obtained by using Technovision FM-114 at 50 ° C. with a 75 ⁇ m-thick silicon wafer (8-inch unpolished wafer, manufactured by DISCO Corporation, DAG-810). The wafer was abraded to a thickness of 75 ⁇ m by polygrind polishing. The protective film was cured by curing the silicon wafer with the protective film at 175 ° C./4 hours with a dryer. The silicon wafer with protective film was diced into 10 mm ⁇ 10 mm square chips under the following conditions, and the cut end surfaces of the 40 chips obtained were observed, and when there was no chipping of 50 ⁇ m or more, the chip was accepted.
  • Dicing condition equipment DISCO Dicer DAD-341
  • Cutting method Single dicing blade: ZH05-SD3500-N1-70EE Blade rotation speed: 30000 rpm Blade speed: 30 mm / sec Dicing film thickness 110 ⁇ m, cutting into dicing film: 50 ⁇ m
  • Folding strength measurement condition equipment Shimadzu Corporation Autograph Anti-folding jig: 4 mm wide Distance between wedge-shaped fulcrums: 6 mm Wedge jig speed: 0.01 m / min
  • the protective films for semiconductors in which the protective films of Examples 1 to 7 contain a fibrous inorganic filler have high tensile elastic modulus, dicing performance, and bending strength, and can realize high productivity of semiconductor chips.
  • the protective films for semiconductors not containing the fibrous inorganic fillers of Comparative Examples 1 to 3 had low dicing performance and inferior bending strength.
  • the present invention is not limited to the above embodiment.
  • the above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. It is contained in the technical range.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)

Abstract

La présente invention a trait à un film de protection destiné à des plaquettes de semi-conducteur qui est doté d'un film de base et d'une membrane de protection qui est formée sur le côté supérieur du film de base, lequel film de protection destiné à une plaquette de semi-conducteur est caractérisé en ce que la membrane de protection contient les composants (A) à (E) ci-dessous. (A) 100 parties en masse d'au moins un type de résine choisi dans le groupe constitué par des résines phénoxy, des résines de polyimide et des résines (méth)acryliques ; (B) 5 à 200 parties en masse d'une résine époxy ; (C) 100 à 400 parties en masse d'une charge autre qu'une charge inorganique fibreuse ; (D) une quantité catalytique d'un catalyseur de durcissement de résine époxy ; et (E) 25 à 5000 parties en masse d'une charge inorganique fibreuse. Un film de protection de plaquette de semi-conducteur qui est doté d'excellentes propriétés de découpe et un procédé hautement productif permettant de fabriquer des puces de semi-conducteur sont de la sorte fournis.
PCT/JP2013/000347 2012-02-13 2013-01-24 Film de protection destiné à une plaquette de semi-conducteur et procédé de fabrication d'une puce de semi-conducteur WO2013121701A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020147022574A KR20140133519A (ko) 2012-02-13 2013-01-24 반도체 웨이퍼용 보호필름 및 반도체칩의 제조방법
CN201380009159.3A CN104137229B (zh) 2012-02-13 2013-01-24 半导体晶片用保护薄膜及半导体芯片的制造方法
SG11201404022UA SG11201404022UA (en) 2012-02-13 2013-01-24 Protective film for semiconductor wafer and method for manufacturing semiconductor chip

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012028911A JP6001273B2 (ja) 2012-02-13 2012-02-13 半導体ウエハ用保護フィルム及び半導体チップの製造方法
JP2012-028911 2012-02-13

Publications (1)

Publication Number Publication Date
WO2013121701A1 true WO2013121701A1 (fr) 2013-08-22

Family

ID=48983843

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/000347 WO2013121701A1 (fr) 2012-02-13 2013-01-24 Film de protection destiné à une plaquette de semi-conducteur et procédé de fabrication d'une puce de semi-conducteur

Country Status (6)

Country Link
JP (1) JP6001273B2 (fr)
KR (1) KR20140133519A (fr)
CN (1) CN104137229B (fr)
SG (1) SG11201404022UA (fr)
TW (1) TWI573833B (fr)
WO (1) WO2013121701A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016027883A1 (fr) * 2014-08-22 2016-02-25 リンテック株式会社 Feuille pour formation de membrane protectrice, et procédé de fabrication de puce semi-conductrice avec membrane protectrice
CN112608700A (zh) * 2020-11-30 2021-04-06 江阴职业技术学院 一种光伏硅晶片切割用环氧胶及其制备方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015137287A (ja) * 2014-01-21 2015-07-30 信越化学工業株式会社 半導体ウエハ用保護フィルムおよび半導体ウエハ用保護フィルム付き半導体チップの製造方法
US10106700B2 (en) 2014-03-24 2018-10-23 Lintec Corporation Protection membrane forming film, protection membrane forming utilization sheet, production method and inspection method for workpiece or processed product, workpiece determined as adequate product, and processed product determined as adequate product
JP6660156B2 (ja) * 2015-11-13 2020-03-04 日東電工株式会社 積層体および合同体・半導体装置の製造方法
JP6721325B2 (ja) 2015-12-14 2020-07-15 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法
JP6791626B2 (ja) * 2015-12-14 2020-11-25 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法
CN115260963B (zh) * 2022-09-27 2022-12-27 武汉市三选科技有限公司 低模量垂直堆叠封装用薄膜黏晶胶、其制备方法及应用

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004214288A (ja) * 2002-12-27 2004-07-29 Lintec Corp チップ用保護膜形成用シート
JP2007512706A (ja) * 2003-11-19 2007-05-17 アドバンスド マテリアル サイエンシーズ、インク 大量生産時における裏面研削処理からの薄型半導体ウェハの保護
JP2008248129A (ja) * 2007-03-30 2008-10-16 Lintec Corp チップ用保護膜形成用シートおよび保護膜付半導体チップ
JP2008247937A (ja) * 2007-03-29 2008-10-16 Lintec Corp 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法
JP2010126617A (ja) * 2008-11-27 2010-06-10 Lintec Corp 接着剤組成物、接着シートおよび半導体装置の製造方法
JP2011162603A (ja) * 2010-02-05 2011-08-25 Lintec Corp 接着剤組成物および接着シート

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101485612B1 (ko) * 2008-04-25 2015-01-22 신에쓰 가가꾸 고교 가부시끼가이샤 반도체 웨이퍼용 보호 필름
WO2010092804A1 (fr) * 2009-02-12 2010-08-19 住友ベークライト株式会社 Film de formation de film de protection de semi-conducteur à feuille de découpage en dés, procédé de fabrication de dispositif à semi-conducteurs l'utilisant et dispositif à semi-conducteurs
JP5388792B2 (ja) * 2009-10-23 2014-01-15 新日鉄住金化学株式会社 多層接着シート及びその製造方法
JP2011082559A (ja) * 2010-12-24 2011-04-21 Hitachi Chem Co Ltd 半導体用接着フィルム

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004214288A (ja) * 2002-12-27 2004-07-29 Lintec Corp チップ用保護膜形成用シート
JP2007512706A (ja) * 2003-11-19 2007-05-17 アドバンスド マテリアル サイエンシーズ、インク 大量生産時における裏面研削処理からの薄型半導体ウェハの保護
JP2008247937A (ja) * 2007-03-29 2008-10-16 Lintec Corp 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法
JP2008248129A (ja) * 2007-03-30 2008-10-16 Lintec Corp チップ用保護膜形成用シートおよび保護膜付半導体チップ
JP2010126617A (ja) * 2008-11-27 2010-06-10 Lintec Corp 接着剤組成物、接着シートおよび半導体装置の製造方法
JP2011162603A (ja) * 2010-02-05 2011-08-25 Lintec Corp 接着剤組成物および接着シート

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016027883A1 (fr) * 2014-08-22 2016-02-25 リンテック株式会社 Feuille pour formation de membrane protectrice, et procédé de fabrication de puce semi-conductrice avec membrane protectrice
WO2016027888A1 (fr) * 2014-08-22 2016-02-25 リンテック株式会社 Feuille pour formation de membrane protectrice, et procédé de fabrication de puce semi-conductrice avec membrane protectrice
JPWO2016027888A1 (ja) * 2014-08-22 2017-06-01 リンテック株式会社 保護膜形成用シートおよび保護膜付き半導体チップの製造方法
JPWO2016027883A1 (ja) * 2014-08-22 2017-06-01 リンテック株式会社 保護膜形成用シートおよび保護膜付き半導体チップの製造方法
CN112608700A (zh) * 2020-11-30 2021-04-06 江阴职业技术学院 一种光伏硅晶片切割用环氧胶及其制备方法

Also Published As

Publication number Publication date
TW201343774A (zh) 2013-11-01
CN104137229B (zh) 2017-01-18
TWI573833B (zh) 2017-03-11
JP6001273B2 (ja) 2016-10-05
CN104137229A (zh) 2014-11-05
JP2013165245A (ja) 2013-08-22
SG11201404022UA (en) 2014-10-30
KR20140133519A (ko) 2014-11-19

Similar Documents

Publication Publication Date Title
JP5233032B2 (ja) 半導体ウエハ用保護フィルム
JP6001273B2 (ja) 半導体ウエハ用保護フィルム及び半導体チップの製造方法
JP5046366B2 (ja) 接着剤組成物及び該接着剤からなる接着層を備えたシート
JP4171898B2 (ja) ダイシング・ダイボンド用接着テープ
JP4658735B2 (ja) 接着剤組成物及び接着フィルム
TWI460249B (zh) 黏合組成物、黏合膜及製造半導體元件的方法
JP2007150065A (ja) ダイシング・ダイボンド用接着テープ
JP5977717B2 (ja) 半導体封止用基材付封止材、半導体封止用基材付封止材の製造方法、及び半導体装置の製造方法
JP2010287884A (ja) 半導体チップの製造方法
JP2008124141A (ja) ダイシング・ダイボンド用接着フィルム
JP2012049388A (ja) 半導体ウエハ保護膜形成用シート
JP2008248114A (ja) 接着剤組成物
JP2010265338A (ja) 接着剤組成物、接着用シート及びダイシング・ダイアタッチフィルム
JP5648617B2 (ja) 熱伝導性接着剤組成物並びにそれを用いた接着用シート及び熱伝導性ダイシング・ダイアタッチフィルム
JP2006005159A (ja) ダイシング・ダイボンド用接着テープ
JP2008308618A (ja) 接着剤組成物及び接着フィルム
JP2008138124A (ja) 接着剤組成物及び接着性フィルム
JP4235808B2 (ja) 接着剤組成物及び接着フィルム
JP5183076B2 (ja) 半導体装置の製造方法
JP2015179769A (ja) 半導体封止用基材付封止材、半導体装置、及び半導体装置の製造方法
JP4530125B2 (ja) 接着剤組成物及び接着フイルム並びにダイシング・ダイボンド用接着テープ
JP5931700B2 (ja) 半導体ウエハ用保護フィルム及び半導体チップの製造方法
JP4530126B2 (ja) 接着剤組成物及び接着フイルム
JP4586966B2 (ja) 接着剤組成物及び接着フィルム
JP2008308552A (ja) 接着剤組成物及び接着フィルム

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13749523

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20147022574

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13749523

Country of ref document: EP

Kind code of ref document: A1