WO2013091761A1 - Procédé pour produire un revêtement homogène par hipims - Google Patents
Procédé pour produire un revêtement homogène par hipims Download PDFInfo
- Publication number
- WO2013091761A1 WO2013091761A1 PCT/EP2012/004847 EP2012004847W WO2013091761A1 WO 2013091761 A1 WO2013091761 A1 WO 2013091761A1 EP 2012004847 W EP2012004847 W EP 2012004847W WO 2013091761 A1 WO2013091761 A1 WO 2013091761A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- power
- power pulse
- pulse interval
- generator
- coating
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
Definitions
- the present invention relates to a HIPIMS method with which homogeneous layers can be deposited over the height of a coating chamber.
- the HIPIMS process is a physical coating process from the gas phase. More specifically, it is a magnetron-assisted sputtering method in which a very high discharge current density is imposed on the sputtering material-supplying target, so that a high electron density is generated in the plasma and the majority of the sputtered particles are ionized.
- Power densities between 250W / cm2 and 2000W / cm2 are used and special demands are placed on the generator supplying the power. In particular, it is not possible to permanently affect such a performance on the target, as this would overheat and thus be damaged. The power must therefore be pulsed.
- the very high, desired discharge densities occur and the target heats up.
- the target can cool down again.
- Pulse duration and pulse pause must be coordinated so that the average power applied to the target does not exceed a threshold value. For HIPIMS therefore generators are required, which are able to deliver pulsed very high performance.
- the workpieces are often distributed over the entire usable coating height. Workpieces are both tools and other components. In many cases, it is important to coat the workpieces with the same layer thickness and with the same layers, whether at the top, in the middle or at the bottom. In particular, if, as in the HIPIMS process, plasmas and their density have a significant influence on the coating rate, this goal is difficult to achieve. One of the reasons for this is that the plasmas themselves are influenced by the surrounding environment, which can lead to different coating rates over the height of the coating chamber. Typically, DC sputtering attempts to compensate for this by adjusting the magnetic fields across the height.
- the procedure is such that a PVD sputtering cathode comprising a first part cathode and a second part cathode is operated, wherein a maximum average power input is predetermined for the part cathodes and wherein the duration of the power pulse intervals are predetermined and the method comprises the following steps: a) Provision of a generator with a predetermined power output, preferably at least after switching on and after expiry of a power setup interval b) Turning on the generator c) Connecting the first part cathode to the generator, so that the The first partial cathode is supplied with power from the generator.
- FIG. 1 shows a corresponding situation with 6 partial cathodes and 3 groups.
- the object is now achieved by individually selecting the length of the individual power pulse intervals and thus achieving a desired coating thickness profile over the height of the coating chamber. That According to the invention, the magnetic fields are not adjusted over the height of the coating chamber, as usual, but the duration of the power pulse intervals. The same is shown in FIG. It can be seen that the power pulse interval connected to the first sub-cathode is significantly longer than the power pulse interval connected to the sub-cathode 5. Due to the longer power pulse interval, the average coating rate starting from the partial cathode 1 becomes longer than the average coating rate starting from the partial cathode 5.
- the power pulse intervals of all the subcathodes are selected to be the same length, and so a first coating is made for calibration. Subsequently, the coating thicknesses are measured over the height of the coating chamber. If there are differences in the thicknesses, then where the layers are too small in comparison to the average thickness, the power pulse intervals are somewhat prolonged. Where the layers are too large compared to the average thickness, the power pulse intervals are somewhat shortened. By doing so, a balance is achieved, it being clear to the person skilled in the art that several iteration steps can be carried out to further improve the homogenization.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Pretreatment Of Seeds And Plants (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2014129572A RU2633516C2 (ru) | 2011-12-21 | 2012-11-23 | Способ гомогенного нанесения покрытий hipims |
SG11201403396SA SG11201403396SA (en) | 2011-12-21 | 2012-11-23 | Homogeneous hipims coating method |
CA2859747A CA2859747C (fr) | 2011-12-21 | 2012-11-23 | Procede pour produire un revetement homogene par hipims |
MX2014007668A MX341506B (es) | 2011-12-21 | 2012-11-23 | Método de recubrimiento de hipims homogéneo. |
JP2014547731A JP6180431B2 (ja) | 2011-12-21 | 2012-11-23 | 均質なhipims被覆方法 |
CN201280063780.3A CN104160470B (zh) | 2011-12-21 | 2012-11-23 | 均匀的hipims涂敷方法 |
EP12812516.8A EP2795658A1 (fr) | 2011-12-21 | 2012-11-23 | Procédé pour produire un revêtement homogène par hipims |
US14/367,354 US10982321B2 (en) | 2011-12-21 | 2012-11-23 | Homogeneous HiPIMS coating method |
KR1020147019513A KR101934141B1 (ko) | 2011-12-21 | 2012-11-23 | 균질의 HiPIMS 코팅 방법 |
BR112014014793-0A BR112014014793B1 (pt) | 2011-12-21 | 2012-11-23 | Processo para revestimento físico da fase gasosa por meio de pulverização catódica em uma câmara de revestimento evacuada |
PH12014501435A PH12014501435B1 (en) | 2011-12-21 | 2014-06-20 | Homogeneous hipims coating method. |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011121770A DE102011121770A1 (de) | 2011-12-21 | 2011-12-21 | Homogenes HIPIMS-Beschichtungsverfahren |
DE102011121770.7 | 2011-12-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013091761A1 true WO2013091761A1 (fr) | 2013-06-27 |
Family
ID=47520875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2012/004847 WO2013091761A1 (fr) | 2011-12-21 | 2012-11-23 | Procédé pour produire un revêtement homogène par hipims |
Country Status (13)
Country | Link |
---|---|
US (1) | US10982321B2 (fr) |
EP (1) | EP2795658A1 (fr) |
JP (1) | JP6180431B2 (fr) |
KR (1) | KR101934141B1 (fr) |
CN (1) | CN104160470B (fr) |
BR (1) | BR112014014793B1 (fr) |
CA (1) | CA2859747C (fr) |
DE (1) | DE102011121770A1 (fr) |
MX (1) | MX341506B (fr) |
PH (1) | PH12014501435B1 (fr) |
RU (1) | RU2633516C2 (fr) |
SG (1) | SG11201403396SA (fr) |
WO (1) | WO2013091761A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011117177A1 (de) * | 2011-10-28 | 2013-05-02 | Oerlikon Trading Ag, Trübbach | Verfahren zur Bereitstellung sequenzieller Leistungspulse |
EP4385521A2 (fr) * | 2015-06-18 | 2024-06-19 | Lenz Therapeutics, Inc. | Compositions stables au stockage et procédés de traitement d'erreurs de réfraction de l' il |
JP7509790B2 (ja) | 2019-02-11 | 2024-07-02 | アプライド マテリアルズ インコーポレイテッド | パルスpvdにおけるプラズマ改質によるウエハからの粒子除去方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006017382A1 (de) * | 2005-11-14 | 2007-05-16 | Itg Induktionsanlagen Gmbh | Verfahren und Vorrichtung zum Beschichten und/oder zur Behandlung von Oberflächen |
DE102006021565A1 (de) * | 2005-12-20 | 2007-06-28 | Itg Induktionsanlagen Gmbh | Verfahren und Vorrichtung zum Erzeugen eines Magnetfeldsystems |
US20070181417A1 (en) * | 2004-08-13 | 2007-08-09 | Zond, Inc. | Plasma Source With Segmented Magnetron |
DE102010007516A1 (de) * | 2010-02-11 | 2011-08-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 | Großflächige Kathode für Plasmaprozesse mit hohem Ionisierungsgrad |
WO2012143087A1 (fr) * | 2011-04-20 | 2012-10-26 | Oerlikon Trading Ag, Trübbach | Source de pulvérisation haute puissance |
DE102011117177A1 (de) * | 2011-10-28 | 2013-05-02 | Oerlikon Trading Ag, Trübbach | Verfahren zur Bereitstellung sequenzieller Leistungspulse |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4515668A (en) * | 1984-04-25 | 1985-05-07 | Honeywell Inc. | Method of forming a dielectric layer comprising a gettering material |
JPS6141766A (ja) * | 1984-08-06 | 1986-02-28 | Hitachi Ltd | スパツタリング方法およびスパツタ−装置 |
DE3700633C2 (de) * | 1987-01-12 | 1997-02-20 | Reinar Dr Gruen | Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma |
JPH07116596B2 (ja) * | 1989-02-15 | 1995-12-13 | 株式会社日立製作所 | 薄膜形成方法、及びその装置 |
DE19651615C1 (de) * | 1996-12-12 | 1997-07-10 | Fraunhofer Ges Forschung | Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern |
US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
US7718042B2 (en) * | 2004-03-12 | 2010-05-18 | Oc Oerlikon Balzers Ag | Method for manufacturing sputter-coated substrates, magnetron source and sputtering chamber with such source |
JP2006124753A (ja) * | 2004-10-27 | 2006-05-18 | Bridgestone Corp | Cu2O膜、その成膜方法及び太陽電池 |
US7691544B2 (en) * | 2006-07-21 | 2010-04-06 | Intel Corporation | Measurement of a scattered light point spread function (PSF) for microelectronic photolithography |
WO2008050618A1 (fr) * | 2006-10-24 | 2008-05-02 | Ulvac, Inc. | Procédé de fabrication d'un film mince et dispositif de fabrication d'un film mince |
US20080197015A1 (en) * | 2007-02-16 | 2008-08-21 | Terry Bluck | Multiple-magnetron sputtering source with plasma confinement |
JP5037475B2 (ja) * | 2008-11-11 | 2012-09-26 | 株式会社神戸製鋼所 | スパッタ装置 |
DE202010001497U1 (de) * | 2010-01-29 | 2010-04-22 | Hauzer Techno-Coating B.V. | Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle |
DE102010007515A1 (de) * | 2010-02-11 | 2011-08-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 | Verfahren zum Betreiben einer großflächigen Kathode für Plasmaprozesse mit hohem Ionisierungsgrad |
-
2011
- 2011-12-21 DE DE102011121770A patent/DE102011121770A1/de not_active Withdrawn
-
2012
- 2012-11-23 US US14/367,354 patent/US10982321B2/en active Active
- 2012-11-23 SG SG11201403396SA patent/SG11201403396SA/en unknown
- 2012-11-23 EP EP12812516.8A patent/EP2795658A1/fr not_active Withdrawn
- 2012-11-23 JP JP2014547731A patent/JP6180431B2/ja active Active
- 2012-11-23 CN CN201280063780.3A patent/CN104160470B/zh active Active
- 2012-11-23 KR KR1020147019513A patent/KR101934141B1/ko active IP Right Grant
- 2012-11-23 CA CA2859747A patent/CA2859747C/fr active Active
- 2012-11-23 WO PCT/EP2012/004847 patent/WO2013091761A1/fr active Application Filing
- 2012-11-23 MX MX2014007668A patent/MX341506B/es active IP Right Grant
- 2012-11-23 BR BR112014014793-0A patent/BR112014014793B1/pt active IP Right Grant
- 2012-11-23 RU RU2014129572A patent/RU2633516C2/ru active
-
2014
- 2014-06-20 PH PH12014501435A patent/PH12014501435B1/en unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070181417A1 (en) * | 2004-08-13 | 2007-08-09 | Zond, Inc. | Plasma Source With Segmented Magnetron |
DE102006017382A1 (de) * | 2005-11-14 | 2007-05-16 | Itg Induktionsanlagen Gmbh | Verfahren und Vorrichtung zum Beschichten und/oder zur Behandlung von Oberflächen |
DE102006021565A1 (de) * | 2005-12-20 | 2007-06-28 | Itg Induktionsanlagen Gmbh | Verfahren und Vorrichtung zum Erzeugen eines Magnetfeldsystems |
DE102010007516A1 (de) * | 2010-02-11 | 2011-08-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 | Großflächige Kathode für Plasmaprozesse mit hohem Ionisierungsgrad |
WO2012143087A1 (fr) * | 2011-04-20 | 2012-10-26 | Oerlikon Trading Ag, Trübbach | Source de pulvérisation haute puissance |
DE102011117177A1 (de) * | 2011-10-28 | 2013-05-02 | Oerlikon Trading Ag, Trübbach | Verfahren zur Bereitstellung sequenzieller Leistungspulse |
Non-Patent Citations (1)
Title |
---|
See also references of EP2795658A1 * |
Also Published As
Publication number | Publication date |
---|---|
JP6180431B2 (ja) | 2017-08-16 |
US20150001063A1 (en) | 2015-01-01 |
KR20140116102A (ko) | 2014-10-01 |
PH12014501435A1 (en) | 2014-09-22 |
MX2014007668A (es) | 2014-11-25 |
CN104160470A (zh) | 2014-11-19 |
PH12014501435B1 (en) | 2014-09-22 |
CA2859747A1 (fr) | 2013-06-27 |
BR112014014793B1 (pt) | 2021-08-10 |
RU2014129572A (ru) | 2016-02-10 |
RU2633516C2 (ru) | 2017-10-13 |
US10982321B2 (en) | 2021-04-20 |
EP2795658A1 (fr) | 2014-10-29 |
CN104160470B (zh) | 2017-01-18 |
BR112014014793A2 (pt) | 2017-06-13 |
DE102011121770A1 (de) | 2013-06-27 |
KR101934141B1 (ko) | 2018-12-31 |
CA2859747C (fr) | 2019-12-31 |
SG11201403396SA (en) | 2014-12-30 |
MX341506B (es) | 2016-08-22 |
JP2015508448A (ja) | 2015-03-19 |
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