WO2013089443A1 - Nouveau polymère de dicétopyrrolopyrrole et élément électronique organique utilisant celui-ci - Google Patents

Nouveau polymère de dicétopyrrolopyrrole et élément électronique organique utilisant celui-ci Download PDF

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WO2013089443A1
WO2013089443A1 PCT/KR2012/010815 KR2012010815W WO2013089443A1 WO 2013089443 A1 WO2013089443 A1 WO 2013089443A1 KR 2012010815 W KR2012010815 W KR 2012010815W WO 2013089443 A1 WO2013089443 A1 WO 2013089443A1
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organic semiconductor
polymer
organic
diketopyrrolopyrrole
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권순기
김윤희
강일
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경상대학교산학협력단
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Definitions

  • the present invention relates to an organic semiconductor compound for organic electronic device such as an organic thin film transistor (OTFT) and its use. More specifically, the present invention relates to a diketopyrrolopyrrole polymer and an organic electronic device using the same as an organic semiconductor layer as a novel organic semiconductor compound having a high pi electron stack by introducing an electron donor compound into a diketopyrrolopyrrole derivative. will be.
  • OFT organic thin film transistor
  • OFTs organic thin film transistors
  • the organic thin film transistor using the organic semiconductor has the advantages of simpler manufacturing process and lower cost production compared to the organic thin film transistor using amorphous silicon and polysilicon, and is compatible with the plastic substrates for implementing the flexible display. Due to this superior advantage, many researches are being made recently.
  • the use of a polymer organic semiconductor has the advantage that the manufacturing cost can be reduced compared to the low molecular organic semiconductor compound because of the advantage that the thin film can be easily formed by the solution process.
  • Representative semiconductor compounds for polymer-based organic thin film transistors developed to date include P3HT [poly (3-hexylthiophene)] and F8T2 [poly (9,9-dioctylfluorene-co-bithiophene)].
  • P3HT poly (3-hexylthiophene)
  • F8T2 poly (9,9-dioctylfluorene-co-bithiophene
  • FIG. 1 is a cross-sectional view illustrating a structure of a general organic thin film transistor including a substrate, a gate, an insulating layer, an electrode layer (source, drain), and an organic conductive layer, and a gate electrode is formed on the substrate.
  • An insulating layer is formed on the gate electrode, and an organic semiconductor layer, and a source and a drain electrode are formed in this order.
  • the driving principle of the organic thin film transistor having the above structure will be described with reference to an example of a p-type semiconductor. First, when a current is applied by applying a voltage between the source and the drain, a current proportional to the voltage flows under a low voltage.
  • the organic thin film transistors which are constructed on the principle described above, include electrodes (source and drain), substrates and gate electrodes requiring high thermal stability, insulators having high dielectric properties and dielectric constants, and semiconductors that transfer charges well.
  • the core material is organic semiconductor.
  • Organic semiconductors can be classified into low molecular organic semiconductors and high molecular organic semiconductors according to molecular weight, and are classified into n-type organic semiconductors or p-type organic semiconductors according to whether electrons or holes are transferred. In general, when a low molecular weight organic semiconductor is used in forming an organic semiconductor layer, the low molecular weight organic semiconductor is easy to purify and almost removes impurities, so the charge transfer characteristics are excellent.
  • Korean Patent Publication No. 2011-0091711 discloses a polymer in which an S-containing heteroaromatic ring is directly bonded to a diketopyrrolopyrrole group.
  • the materials that have emerged so far do not exhibit sufficient expansion of pi electrons, so it is necessary to develop a polymer semiconductor material exhibiting sufficient pi electron overlap.
  • Korean Patent Publication No. 2009-0024832 discloses a polymer in which an S-containing heteroaromatic ring is directly bonded, and at the same time, alkyl having 1 to 25 carbon atoms can be substituted for a nitrogen atom of a diketopyrrolopyrrole group.
  • alkyl having 8 10 and 16 carbon atoms are substituted are described.
  • the solubility is poor and the charge mobility is not sufficient, making it difficult to apply to the actual organic thin film transistor. there was.
  • the present invention has been completed for the first time to realize that a new diketopyrrolopyrrole polymer having a very good charge mobility as a polymer having an S-containing heteroaromatic ring of the present invention is directly bonded.
  • diketopyrrolopyrrole polymers containing a double bond that can exhibit sufficient pi electron expansion by having an expanded conjugated structure, thereby increasing solubility and having significant charge mobility properties.
  • Another object of the present invention is to provide a diketopyrrolopyrrole polymer which is a novel organic semiconductor compound that is easy to spin coating at room temperature to enable a solution process.
  • another object of the present invention is to provide an organic thin film transistor including a novel diketopyrrolopyrrole polymer in the organic semiconductor layer capable of a high temperature solution process such as high charge mobility and spin coating according to the present invention.
  • the present invention relates to an organic semiconductor compound for organic electronic device such as an organic thin film transistor (OTFT) and its use. More specifically, the present invention relates to a p-type polymer organic semiconductor compound used as an active layer material of an organic thin film transistor configured to alternately polymerize a diketopyrrolopyrrole derivative as an electron acceptor compound and a compound containing a vinylene group as an electron donor compound. Dyketopyrrolopyrrole polymer and an organic electronic device using the same.
  • the inventors of the present invention have unexpected charge mobility, thermal stability, solubility characteristics, oxidation stability, threshold voltage and flashing ratio when the carbon number of the alkyl group substituted at the nitrogen atom of the diketopyrrolopyrrole group is adjusted to 24 or more.
  • the surprising improvement effect was first confirmed to complete the present invention.
  • the cause is unknown, but when the carbon number of the alkyl group is adjusted to 28 or more, the charge mobility and solubility characteristics are improved as compared to the alkyl group having less than 24 carbon atoms.
  • the present invention has been completed for the first time to recognize that an amazing effect of improved mobility is 1.5 times or more or 2 times or more.
  • the organic semiconductor compound of the present invention is a diketopyrrolopyrrole polymer represented by the following formula (1), by introducing a vinylene group (V) increases the coplanarity of the main chain (electron density) by having an expanded conjugated structure Improves intermolecular interactions and high mobility.
  • R 1 and R 2 are each independently (C 24 -C 50) alkyl
  • L 1 and L 2 are each independently selected from the following structures
  • V is ego
  • a 1 and A 2 are each independently hydrogen, cyano or -COOR ';
  • R ' is (C1-C50) alkyl or (C6-C50) aryl;
  • R 3 to R 8 are each independently hydrogen, hydroxy group, amino, (C1-C50) alkyl, (C6-C50) aryl, (C1-C50) alkoxy, mono or di (C1-C50) alkylamino, (C1- C50) alkoxycarbonyl or (C1-C50) alkylcarbonyloxy;
  • n is an integer of 1 or 2, and when m is 2, each of V and L 2 may be the same or different from each other;
  • n is an integer from 1 to 1,000.
  • Is selected from the following structures.
  • R 1 and R 2 are each independently (C28-C50) alkyl, it is preferable that the alkyl includes a linear or branched alkyl.
  • the diketopyrrolopyrrole polymer of the present invention is specifically selected from the following compounds.
  • n is an integer of 1 to 1,000.
  • the diketopyrrolopyrrole polymer of the present invention is selected from the following compounds.
  • n is an integer of 1 to 1,000.
  • the diketopyrrolopyrrole polymer of the present invention is selected from the following compounds.
  • n is an integer of 1 to 1,000.
  • the final compound may be prepared through an alkylation reaction, a Grignard coupling reaction, a Suzuki coupling reaction, a Stiletto coupling reaction, and the like.
  • the organic semiconductor compound according to the present invention is not limited to the above production method, and may be prepared by a conventional organic chemical reaction in addition to the above production method.
  • the diketopyrrolopyrrole polymer according to the present invention can be used as a material for forming an organic semiconductor layer of an organic electronic device, specific examples of the manufacturing method of the organic thin film transistor to which it is applied are as follows.
  • n-type silicon used in a conventional organic thin film transistor.
  • This substrate contains the function of the gate electrode.
  • a glass substrate or a transparent plastic substrate having excellent surface smoothness, ease of handling, and waterproofness may be used as the substrate.
  • a gate electrode must be added on the substrate.
  • Substances which can be employed as the substrate include glass, polyethylenenaphthalate (PEN), polyethylene terephthalate (PET), polycarbonate (PC), polyvinyl alcohol (PVP), polyacrylate (Polyacrylate). , Polyimide, polynorbornene and polyethersulfone (PES).
  • an insulator having a high dielectric constant which is commonly used, may be used.
  • Ba 0.33 Sr 0.66 TiO 3 (BST), Al 2 O 3 , Ta 2 O 5 , and La 2 Ferroelectric insulators selected from the group consisting of O 5 , Y 2 O 3 and TiO 2 , PdZr 0.33 Ti 0.66 O 3 (PZT), Bi 4 Ti 3 O 12 , BaMgF 4 , SrBi 2 (TaNb) 2 O 9 , Ba (ZrTi ) O 3 (BZT), BaTiO 3 , SrTiO 3 , Bi 4 Ti 3 O 12 , SiO 2 , SiN x and AlON, an inorganic insulator selected from the group consisting of polyimide, benzocyclobutene (BCB), parylene ( Organic leading bodies such as parylene, polyacrylate, polyvinylalcohol, and polyvinylphenol
  • the organic thin film transistor of the present invention is composed of the substrate 11, the gate electrode 16, the insulating layer 12, the organic base layer 13, the source 14, and the drain electrode 15. As shown in FIG. It includes both top-contact as well as bottom-contact types of substrate / gate electrode / insulation layer / source and drain electrode / derivative layer.
  • HMDS 1,1,1,3,3,3-hexamethyldisilazane
  • OTS octadecyltrichlorosilane
  • OTDS octadecyltrichlorosilane
  • the organic semiconductor layer employing the diketopyrrolopyrrole polymer according to the present invention may be formed into a thin film through vacuum deposition, screen printing, printing, spin casting, spin coating, dipping or ink spraying, At this time, the deposition of the organic semiconductor layer may be formed using a high temperature solution at 40 °C or more, the thickness is preferably about 500 kPa.
  • the gate electrode 16 and the source and drain electrodes 14 and 15 may be conductive materials, but gold (Au), silver (Ag), aluminum (Al), nickel (Ni), chromium (Cr), and indium tin may be used. It is preferably formed of a material selected from the group consisting of oxides (ITOs).
  • FIG. 1-A cross-sectional view showing the structure of a general organic thin film transistor made of a substrate / gate / insulating layer (source, drain) / semiconductor layer.
  • TGA 11-Thermogravimetric Analysis
  • TGA 12-Thermogravimetric analysis
  • TGA 13-Thermogravimetric Analysis
  • Triphenylphosphine 60.56 g, 0.2308 mol was dissolved in methylene chloride (MC) in a 500 mL three-neck round bottom flask, and the temperature was lowered to 0 ° C. and bromine (35.67 g, 0.2231 mol) was dropped ( dropping) and stir for 10 minutes. Then, 2-dodecylhexadecane-1-ol (33.0 g, 0.0803 mol) dissolved in methylene chloride (MC) was dropped and stirred for 16 hours. Extracted with methylene chloride (MC), the organic layer was washed with water, dried over MgSO 4 and the solvent was removed using a rotary evaporator.
  • MC methylene chloride
  • the polymer may be polymerized through a Stille coupling reaction.
  • the polymer may be polymerized through a Stille coupling reaction. 3,6-bis (5-bromothiophen-2-yl) -2,5-bis (2-decyltetradecyl) pyrrolo [3,4-c] pyrrole-1,4 (2H, 5H)- Dione (0.50 g, 0.0004 mol), (E) -1,2-bis (3-dodecyl-5- (trimethylstannyl) thiophen-2-yl) ethene (Preparation Example 3, 0.378 g, 0.0004 mmol ), Pd 2 (dba) 3 (0.008 mg, 2 mol%) and P (o-tol) 3 (0.011 g, 8 mol%) were used to obtain the title compound PDPPDBTE12 in the same manner as in Example 1 Yield: 90%).
  • the polymer may be polymerized through a Stille coupling reaction.
  • (E) -1,2-bis (4- (trimethylstannyl) phenyl) ethene Preparation Example 2, 0.202 g, 0.0004 mmol
  • Pd 2 (dba) 3 (0.008 mg, 2 mol%)
  • P (o-tol) 3 0.011 g, 8 mol%) were used to obtain the title compound PDPPBTPE in the same manner as in Example 1 (yield: 90%).
  • the polymer may be polymerized through a Stille coupling reaction.
  • (E) -1,2-bis (3-dodecyl-5- (trimethylstannyl) thiophen-2-yl) ethene (Preparation Example 4, 0.39 g, 0.0004 mmol )
  • the title compound PDPPDTTE12 was obtained in the same manner as in Example 1 using Pd 2 (dba) 3 (0.008 mg, 2 mol%) and P (o-tol) 3 (0.011 g, 8 mol%) ( Yield: 75%).
  • the polymer may be polymerized through Suzuki coupling. Remove water from the flask and remove 2,5-bis (2-decyltetradecyl) -3,6-bis (5- (4,4,5,5-tetramethyl-1,3,2-dioxaborolane- 2-yl) thiophen-2-yl) pyrrolo [3,4-c] pyrrole-1,4 (2H, 5H) -dione (1.20 g, 0.0010 mol) and (E) -2,3-bis Add (5-bromothiophen-2-yl) acrylonitrile (0.367g, 0.0010 mmol), add 2M K 2 CO 3 (2.94 mL) and toluene (12 mL), and perform nitrogen bubbling for 30 minutes.
  • the polymer may be polymerized through Suzuki coupling. Remove water from the flask and remove 2,5-bis (2-decyltetradecyl) -3,6-bis (5- (4,4,5,5-tetramethyl-1,3,2-dioxaborolane- 2-yl) thiophen-2-yl) pyrrolo [3,4-c] pyrrole-1,4 (2H, 5H) -dione (0.5 g, 0.0004 mol), (Z) -2,3-bis (4-bromo-2,5-dimethylphenyl) acrylonitrile (0.367 g, 0.0004 mmol), 2M K 2 CO 3 (1.17 mL), toluene (5 mL), catalyst Pd (pph 3 ) 4 (0.023 mg, 5 mol%) was used to obtain the title compound PDPPBDTPA in the same manner as in Example 5 (yield: 80%).
  • the polymer may be polymerized through a Stille coupling reaction.
  • 3,6-bis (5-bromothiophen-2-yl) -2,5-bis (2-decyltetradecyl) pyrrolo [3,4-c] pyrrole-1,4 (2H, 5H)- Dione (0.50 g, 0.0004 mol)
  • 2- (4-((E) -2- (3-dodecyl-5- (trimethylstannyl) thiophen-2-yl) vinyl) -2,5-di Methylstyryl) -3-dodecyl-5- (trimethylstannyl) thiophene (0.39 g, 0.0004 mmol
  • Pd 2 (dba) 3 (0.008 mg, 2 mol%)
  • P (o-tol) 3 0.011 g, 8 mol%) was used to obtain the title compound PDPPDTDTEP (yield: 75%) in the same manner as in Example 1.
  • the polymer may be polymerized through a Stille coupling reaction.
  • 3,6-bis3,6-bis (5-bromothiophen-2-yl) -2,5-bis (2-dodecylhexadecyl) -2,5-dihydro-pyrrolo [3,4 -c] pyrrole-1,4 (2H, 5H) -dione (Preparation Example 6, 0.30 g, 0.92 mmol) and (E) -1,2-bis (5- (trimethylstannyl) thiophen-2- Il) ethene (Preparation Example 1, 0.13 g, 0.92 mmol) is dissolved in chlorobenzene (4.5 mL) and subjected to nitrogen substitution.
  • the polymer may be polymerized through a Stille coupling reaction.
  • the OTFT device was fabricated in a top-contact manner, 100 nm n-doped silicon was used as a gate, and SiO 2 was used as an insulator.
  • Surface treatment was performed by using a piranha cleaning solution (H 2 SO 4 : 2H 2 O 2 ) to wash the surface, Alfa's ODTS (octadecyltrichlorosilane) surface was used after SAM (Self Assemble Monolayer) treatment.
  • the organic semiconductor layer was coated with 0.2 wt% chloroform solution using a spin-coater for 1 minute at 2000 rpm.
  • PDPPDBTE As the organic semiconductor material, PDPPDBTE, P28DPP-TVT, or P32DPP-TVT synthesized in Examples 1, 8, and 9, respectively, were used.
  • the thickness of the organic semiconductor layer was confirmed as 50 nm using a surface profiler (Alpha Step 500, Tencor). Gold used as the source and drain was deposited at a thickness of 60 nm at 1 A / s. The channel is 100 ⁇ m long and 1000 ⁇ m wide.
  • Keithley 4800 was used to measure the properties of the OTFT.
  • the charge mobility of the organic electronic device manufactured in Example 10 was obtained from the slope of the graph with (I SD ) 1/2 and V G as variables from the following saturation region current equation.
  • I SD is the source-drain current
  • ⁇ or ⁇ FET is the charge mobility
  • C 0 is the oxide capacitance
  • W is the channel width
  • L is the channel length
  • V G is the gate voltage
  • V is T is the threshold voltage.
  • the cutoff leakage current I off is a current flowing in the off state, and is determined as the minimum current in the off state in the current ratio.
  • the light absorption regions of the organic semiconductor compounds (PDPPDBTE, P28DPP-TVT, P32DPP-TVT) synthesized in Examples 1, 8, and 9 were measured in a solution state (solution: CHCl 3 ) and in a film state. 4 is shown.
  • a solution state solution: CHCl 3
  • a film state 4 is shown.
  • 50 mV / in a solvent (Acetonitrile) of Bu 4 NClO 4 (0.1 molarity) 5 to 7 show the results measured using cyclic voltammetry with a cycle under the condition of s. Voltage was applied through the coating using a carbon electrode during the measurement.
  • Table 1 below describes the optical and electrochemical properties of the organic semiconductor compounds synthesized in Examples 1, 8 and 9 (PDPPDBTE, P28DPP-TVT, P32DPP-TVT).
  • the HOMO value is a value calculated using the result value measured in FIGS. 5 to 7.
  • the band gap was obtained from the UV absorption wavelength in the film state. As shown in Table 1, the bandgap is similar and the oxidation stability is similar or slightly increased, the oxidation level is similar or slightly increased as the carbon number of the alkyl group is increased, the organic semiconductor compounds of Examples 1, 8 and 9 It can be seen that the oxidation stability is excellent.
  • thermal stability of the organic semiconductor compounds (PDPPDBTE, P28DPP-TVT, and P32DPP-TVT) synthesized in Examples 1, 8, and 9 were measured.
  • PDPPDBTE the glass transition temperature was measured at 260 ° C.
  • the melting temperature was measured at 277 ° C. and the crystallization temperature was measured at 261 ° C., indicating that the crystal had a qualitative characteristic.
  • P28DPP-TVT the melting temperature value (T m ) was measured at 286 ° C. and the crystallization temperature value was measured at 258 ° C., indicating that the crystal had a qualitative characteristic.
  • P32DPP-TVT a melting peak was observed around 280 ° C, indicating that the thermal properties were excellent.
  • 11 to 13 illustrate results obtained by measuring decomposition temperatures of organic semiconductor compounds (PDPPDBTE, P28DPP-TVT, and P32DPP-TVT) synthesized in Examples 1, 8, and 9 using TGA.
  • the temperature at which 5% decomposition of PDPPDBTE occurs was measured at 421 ° C
  • Both P28DPP-TVT and P32DPP-TVT have excellent thermal stability.
  • FIG. 14 a distribution state of electrons according to energy levels of molecules is illustrated through DFT calculation.
  • HOMO energy level of the organic semiconductor compound (PDPPDBTE) synthesized in Example 1 it can be seen that electrons are spread throughout the molecular structure.
  • LUMO energy level it can be seen that the electrons of the electron donor move toward the electron acceptor, and the result shows that the charge separation of the energy is performed well.
  • AFM images of the device fabricated in Example 10 using the organic semiconductor compound (PDPPDBTE) synthesized in Example 1 (a: at room temperature, b: annealed film at 200 ° C.), c: Fig. 1 shows the state of the film annealed at 250 ° C.), and the crystallinity of the molecule is increased after annealing.
  • PDPPDBTE organic semiconductor compound
  • 16 to 21 are diagrams showing the transfer curve of the device fabricated in Example 10 using the organic semiconductor compound (PDPPDBTE, P28DPP-TVT, P32DPP-TVT) synthesized in Examples 1, 8 and 9, the polymer material It is a figure showing the characteristics of the organic electronic device. As shown in FIGS. 16 to 21, the organic semiconductor compound synthesized in the present invention has excellent thermal stability, and it can be seen that the charge mobility increases when annealing is an excellent material.
  • the organic semiconductor compound synthesized in the present invention has excellent thermal stability, and it can be seen that the charge mobility increases when annealing is an excellent material.
  • Table 2 describes the characteristics of the device fabricated in Example 10 using the organic semiconductor compounds synthesized in Examples 1, 8, and 9 (PDPPDBTE, P28DPP-TVT, P32DPP-TVT).
  • the charge mobility increased from 1.32 ⁇ 2.62 ⁇ 2.65
  • the flashing ratio (1.53 ⁇ 10 4 ⁇ 2.78 ⁇ 10 4 ) are increased as the carbon number of the alkyl group substituted in the organic semiconductor compound is increased. ⁇ 7.54 x 10 4 )
  • a diketopyrrolopyrrole polymer having the following structure was used (J. Am. Chem. Soc. 2011, 133, 10364-10367).
  • Example 10 Using the comparative compound P (DPP-alt-QT) OTFT device was manufactured in the same top-contact manner as in Example 10.
  • alkyl having 24 or more carbon atoms is introduced at the nitrogen atom of the diketopyrrolopyrrole group, while the comparative compound P (DPP-alt-QT) is a diketopyrrole.
  • Alkyl having 20 carbon atoms is introduced into the nitrogen atom of the pyrrole group, and the charge mobility is only about 30 to 40%, which is significantly lower than the embodiment of the present invention, proving the superiority of the present invention.
  • the alkyl having 24 or more carbon atoms when introduced as in the present invention, it has a good solubility and has a relatively high molecular weight and is relatively well dissolved, so that the solution process is smoother than that of the comparative compound P (DPP-alt-QT). Will be lost.
  • the diketopyrrolopyrrole polymer of the present invention a vinylene group is necessarily introduced between thiophene and thiophene, while the comparative compound P (DPP-alt-QT) has a structure in which thiophene and thiophene are connected by a single bond. to be. Accordingly, the diketopyrrolopyrrole polymer of the present invention can form a longer conjugated structure due to the vinylene group, thereby making the intermolecular interaction relatively larger, thereby making the polymer more rich in electron density. Such a structure and the bonding with a substituent having 24 or more carbon atoms bonded to the nitrogen atom has the effect of having a remarkable charge mobility.
  • the present invention surprisingly improved in unexpected charge mobility, thermal stability, solubility characteristics, oxidation stability, threshold voltage and flashing ratio when the carbon number of the alkyl group substituted at the nitrogen atom of the diketopyrrolopyrrole group to 24 or more It was completed by confirming the effect for the first time, and furthermore, the cause is unknown.
  • the carbon number of the alkyl group is adjusted to 28 or more, the charge mobility, the flashing ratio, and the solubility characteristics of the alkyl group may be improved.
  • the charge mobility is improved by more than two times compared to the case of the alkyl group having 24 carbon atoms, the first recognition that the surprising effect was achieved.
  • the organic semiconductor compound according to the present invention that is, a diketopyrrolopyrrole polymer configured to alternately polymerize a compound containing a diketopyrrolopyrrole derivative as an electron acceptor compound and a vinylene group as an electron donor compound is mainly introduced by the introduction of a vinylene group.
  • the organic semiconductor compound according to the present invention is a polymer having 24 or more carbon atoms in the nitrogen atom of the diketopyrrolopyrrole group has excellent solubility characteristics and larger molecular weight, it is easily applied to the solution process.
  • the HOMO value decreases, that is, the electron density increases in the repeating unit, thereby having excellent charge mobility and oxidation stability, and thus may be used as an organic semiconductor layer of the organic thin film transistor. Therefore, the organic thin film transistor employing these devices improves the charge mobility and the flashing ratio, and when the organic thin film transistor is used, it is possible to make an electronic device having excellent efficiency and performance.
  • the organic thin film transistor can also be manufactured by a solution process such as vacuum deposition, spin coating, or printing, thereby reducing the manufacturing cost of an electronic device using the organic thin film transistor.

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Abstract

La présente invention concerne un composé semi-conducteur organique pour un élément électronique organique tel qu'un transistor à couches minces organique (OTFT) et son utilisation. La présente invention concerne plus particulièrement un polymère de dicétopyrrolopyrrole en tant que nouveau composé semi-conducteur organique à chevauchement d'électrons pi élevé par introduction d'un composé donneur d'électrons dans un dérivé de dicétopyrrolopyrrole, et concerne également un élément électronique organique dont la mobilité de la charge et le rapport on/off sont améliorés au moyen du polymère de dicétopyrrolopyrrole sous forme d'une couche de semi-conducteur organique.
PCT/KR2012/010815 2011-12-15 2012-12-13 Nouveau polymère de dicétopyrrolopyrrole et élément électronique organique utilisant celui-ci WO2013089443A1 (fr)

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