WO2013089338A1 - Composition pour solution de gravure de texture d'une plaquette de silicium cristallin, et procédé de gravure de texture - Google Patents

Composition pour solution de gravure de texture d'une plaquette de silicium cristallin, et procédé de gravure de texture Download PDF

Info

Publication number
WO2013089338A1
WO2013089338A1 PCT/KR2012/007131 KR2012007131W WO2013089338A1 WO 2013089338 A1 WO2013089338 A1 WO 2013089338A1 KR 2012007131 W KR2012007131 W KR 2012007131W WO 2013089338 A1 WO2013089338 A1 WO 2013089338A1
Authority
WO
WIPO (PCT)
Prior art keywords
texture
acid
silicon wafer
composition
compound
Prior art date
Application number
PCT/KR2012/007131
Other languages
English (en)
Korean (ko)
Inventor
박면규
이재연
홍형표
Original Assignee
동우화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동우화인켐 주식회사 filed Critical 동우화인켐 주식회사
Publication of WO2013089338A1 publication Critical patent/WO2013089338A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a texture etching solution composition and a texture etching method of the crystalline silicon wafer that can improve the light efficiency by minimizing the texture quality variation of each position on the surface of the crystalline silicon wafer.
  • Solar cells which are rapidly spreading in recent years, are electronic devices that directly convert solar energy, which is clean energy, into electricity as a next-generation energy source, and diffuse phosphorus on its surface based on P-type silicon semiconductors containing boron in silicon. It consists of the PN junction semiconductor substrate in which the N type silicon semiconductor layer was formed.
  • the surface of the solar cell silicon wafer constituting the PN junction semiconductor substrate is formed into a fine pyramid structure and the antireflection film is treated.
  • the surface of the silicon wafer textured with the fine pyramid structure increases the intensity of the light absorbed by lowering the reflectance of incident light having a wide wavelength band, thereby improving the performance of the solar cell.
  • U.S. Patent No. 4,137,123 discloses 0.5-10 weight in an anisotropic etching solution containing 0-75% by volume of ethylene glycol, 0.05-50% by weight of potassium hydroxide and the remaining amount of water.
  • a silicon texture etching solution in which% silicon is dissolved is disclosed.
  • this etchant can cause pyramid formation defects to increase the light reflectance and cause a decrease in efficiency.
  • European Patent No. 0477424 discloses a texture etching method of supplying oxygen to a texture etching solution in which silicon is dissolved in ethylene glycol, potassium hydroxide and residual water, that is, performing an air rating process.
  • this etching method has a disadvantage in that it causes poor pyramid formation, which leads to an increase in light reflectivity and a decrease in efficiency, and requires the installation of a separate air rating equipment.
  • Korean Patent No. 0180621 discloses a texture etching solution mixed at a ratio of 0.5-5% potassium hydroxide solution, 3-20% by volume of isopropyl alcohol, and 75-96.5% by volume of deionized water
  • US Patent No. 6,451,218 No. discloses a texture etching solution comprising an alkali compound, isopropyl alcohol, a water soluble alkaline ethylene glycol and water.
  • these etching solutions contain isopropyl alcohol having a low boiling point and need to be added during the texturing process, it is not economical in terms of productivity and cost, and the addition of isopropyl alcohol causes a temperature gradient of the etching solution, resulting in the surface of the silicon wafer.
  • the texture quality variation of each position may increase, resulting in poor uniformity.
  • Patent Document 1 US Patent Publication 4,137,123
  • Patent Document 2 European Patent Publication 0477424
  • Patent Document 3 Korea Patent Publication 10-0180621
  • a texture of a crystalline silicon wafer capable of forming a texture capable of increasing light efficiency and reducing reflectance by minimizing the quality variation of the texture at each location is reduced. It is an object to provide an etching liquid composition.
  • an object of the present invention is to provide a texture etching liquid composition of a crystalline silicon wafer that does not require the addition of a separate etching liquid component and the application of an air rating process during the etching process.
  • Another object of the present invention is to provide a texture etching method using the texture etching liquid composition of the crystalline silicon wafer.
  • Texture etching liquid composition of crystalline silicon wafer containing polycarboxylic acid type polymer 1.
  • polycarboxylic acid-based polymer is a texture etching solution composition of the crystalline silicon wafer comprising a repeating unit represented by the following formula (1):
  • R 1 , R 2 and R 3 are independently of each other hydrogen, an alkyl group having 1 to 5 carbon atoms, or — (CH 2 ) m 2 COOM 2
  • M 1 and M 2 are independently of each other hydrogen, an alkali metal
  • the polycarboxylic acid-based polymer is acrylic acid, methyl (meth) acrylic acid, ethyl (meth) acrylic acid, trimethyl acrylic acid, maleic acid, fumaric acid, itaconic acid, crotonic acid, citraconic acid, vinyl acetate, 4-pen Texture etching liquid composition of a crystalline silicon wafer formed by polymerizing at least one monomer selected from the group consisting of tenic acid and salts thereof.
  • the monomer is an amide compound, an aromatic vinyl compound, an unsaturated carboxylic acid ester compound, an unsaturated anhydride carboxylic acid compound, an unsaturated alcohol compound, a nonionic group addition unsaturated carboxylic acid ester compound, containing a hydroxyl group (meta)
  • metal A polycarboxylic acid polymer is formed by copolymerizing with at least one comonomer selected from the group consisting of an acrylic acid ester compound, a vinyl cyan compound, an aliphatic diene compound, a vinyl halide compound, a sulfonic acid compound and a phosphonic acid compound. Texture etching liquid composition of crystalline silicon wafer.
  • the polycarboxylic acid-based polymer has a weight average molecular weight of 10,000 to 50,000 texture etching liquid composition of the crystalline silicon wafer.
  • the texture etching liquid composition of the crystalline silicon wafer further comprising an alkali compound.
  • composition according to the above 7, wherein the alkali compound is at least one selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium and tetrahydroxyethylammonium etch silicon.
  • the texture etching liquid composition of the crystalline silicon wafer further comprising a cyclic compound.
  • the cyclic compound has a boiling point of 100 °C or more texture etching liquid composition of the crystalline silicon wafer.
  • the texture etching solution composition of crystalline silicon wafer further comprising the fluorine-based surfactant as in 1 above.
  • the texture etching liquid composition of the crystalline silicon wafer further comprising a silica compound.
  • the silica compound is fine powder silica; Colloidal silica dispersion stabilized with Na 2 O; Colloidal silica dispersion stabilized with K 2 O; Colloidal silica dispersion stabilized with acid solution; Colloidal silica dispersion stabilized with NH 3 ; Colloidal silica dispersion stabilized with at least one organic solvent selected from the group consisting of ethyl alcohol, propyl alcohol, ethylene glycol, methyl ethyl ketone and methyl isobutyl ketone; Liquid sodium silicate; Liquid potassium silicate; And a liquid etching silicate composition of at least one crystalline silicon wafer selected from the group consisting of liquid lithium silicate.
  • the etching method according to the above 15, comprising spraying the etching solution composition for 30 seconds to 60 minutes at a temperature of 50 to 100 °C.
  • the texture etching solution composition and the texture etching method of the crystalline silicon wafer of the present invention to minimize the quality variation of the texture of each position on the surface of the crystalline silicon wafer, that is to improve the uniformity of the texture to maximize the amount of absorption of sunlight and lower the light reflectance Can be.
  • the texture etching liquid composition and the texture etching method of the crystalline silicon wafer of the present invention it is possible to increase the number of silicon wafers to be processed compared to the amount of the etching liquid composition, and it is not necessary to add a separate etching liquid component during the texturing process and introduce an air rating equipment. There is no need to improve quality and productivity, and it is economical in terms of process cost.
  • FIG. 1 is a SEM photograph showing the texture of a single crystal silicon wafer etched using the etching liquid composition for the texture of the crystalline silicon wafer of Example 1.
  • FIG. 1 is a SEM photograph showing the texture of a single crystal silicon wafer etched using the etching liquid composition for the texture of the crystalline silicon wafer of Example 1.
  • FIG. 2 is an SEM photograph showing the texture pyramid structure of the single crystal silicon wafer etched using the etching liquid composition for the texture of the crystalline silicon wafer of Example 1.
  • FIG. 2 is an SEM photograph showing the texture pyramid structure of the single crystal silicon wafer etched using the etching liquid composition for the texture of the crystalline silicon wafer of Example 1.
  • the present invention relates to a texture etching solution composition and texture of a crystalline silicon wafer comprising a polycarboxylic acid-based polymer and salts thereof, thereby forming a uniform fine pyramid structure on the surface of the crystalline silicon wafer to produce a low light reflectance texture. It relates to an etching method.
  • the texture etching solution composition of the crystalline silicon wafer of the present invention is characterized in that it comprises a polycarboxylic acid-based polymer.
  • the polycarboxylic acid-based polymer not only serves to reduce the etching rate difference between the Si 100 direction and the Si 111 direction by controlling the activity of OH - ions in the texture solution, thereby improving the wettability of the crystalline silicon surface. Rapid dropping of the etched and dissolved hydrogen bubbles prevents the bubble stick phenomenon from occurring.
  • the polycarboxylic acid-based polymer according to the present invention may be suitably used as long as it is a polymer having a carboxylic acid functional group, and more specifically, may include a repeating unit represented by the following Chemical Formula 1.
  • R 1 , R 2 and R 3 are independently of each other hydrogen, an alkyl group having 1 to 5 carbon atoms, or — (CH 2 ) m 2 COOM 2
  • M 1 and M 2 are independently of each other hydrogen, an alkali metal
  • m 1 and m 2 are each independently an integer of 0 to 2.
  • sodium or potassium is preferable as alkali metal;
  • alkaline earth metal magnesium and calcium are preferable;
  • As the alkylammonium group having 1 to 10 carbon atoms dimethyl ammonium, methylethylammonium, diethylammonium, trimethylammonium, triethylammonium, tetramethylammonium and the like are preferred.
  • Monoethanol ammonium, diisopropanol ammonium, etc. are preferable.
  • the polycarboxylic acid-based polymer according to the present invention may be formed by polymerizing a monomer capable of forming the repeating unit, for example acrylic acid, methyl (meth) acrylic acid, ethyl (meth) acrylic acid, trimethyl acrylic acid, maleic acid, fumaric acid , Monomers such as itaconic acid, crotonic acid, citraconic acid, vinyl acetic acid, 4-pentenoic acid, and salts thereof may be formed by polymerization alone or by mixing two or more kinds thereof, and thus a homopolymer or It may be a copolymer.
  • the aforementioned monomers may be selected from amide compounds such as acrylamide, methacrylamide, alkyl (meth) acrylamides having 1 to 5 carbon atoms; Aromatic vinyl compounds such as styrene, alpha-methylstyrene, vinyltoluene and styrene chloride; Methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, n-amyl (meth) acrylate, isoamyl (meth) acrylate, hexyl (meth) acrylate, ethylhexyl (meth) Acrylate, octyl (meth) acrylate, diethyl maleate, dimethyl itacate, (poly) ethylene glycol mono (meth) acrylate, (poly) propylene glycol mono (meth) acrylate, (poly) butylene glycol mono ( Unsaturation of
  • the polycarboxylic acid-based polymer according to the present invention can be prepared by adopting an appropriate one from various polymerization methods known in the art, the production method is not particularly limited.
  • the polycarboxylic acid-based polymer according to the present invention preferably has a weight average molecular weight of 10,000 to 50,000.
  • a weight average molecular weight in the above range there is an advantage that can prevent over-etching.
  • the polycarboxylic acid-based polymer according to the present invention may be included in an appropriate amount of the texture etching solution composition of the crystalline silicon wafer, for example, may be included in 0.1 to 20% by weight, preferably 0.1 to 5% by weight relative to the total weight of the composition. It is not limited to this. The effect of forming a uniform texture is most preferred in the above content range.
  • the polycarboxylic acid-based polymer according to the present invention can be applied to the texture etching solution composition of the crystalline silicon wafer commonly used in the art.
  • Crystalline silicon wafers typically comprise an alkali compound.
  • any alkaline compound commonly used in the art may be used without limitation.
  • the alkali compound that can be used include potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium, tetrahydroxyethylammonium, and the like, with potassium hydroxide and sodium hydroxide being preferred. These can be used individually or in mixture of 2 or more types.
  • the alkali compound is preferably included in an amount of 0.1 to 20% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer, more preferably 1 to 5% by weight. When the content falls within the above range, the silicon wafer surface can be etched.
  • the texture etchant composition of the crystalline silicon wafer of the present invention may further comprise a cyclic compound.
  • the cyclic compound is preferably a cyclic hydrocarbon having 4-10 carbon atoms; And a heterocyclic hydrocarbon having 4 to 10 carbon atoms including one or more heteroatoms of N, O, or S, and improves the wettability of the surface of the crystalline silicon wafer to prevent overetching by alkali compounds. This minimizes the quality variation of the texture and at the same time rapidly reduces the amount of hydrogen bubbles generated by etching, thereby preventing the occurrence of bubble stick phenomenon.
  • the boiling point can be used in a small amount compared to isopropyl alcohol is conventionally used as well as increase the number of treatment for the same amount of use.
  • a boiling point of a cyclic compound is high as 100 degreeC or more, More preferably, it is 100-400 degreeC, Most preferably, it is 150-400 degreeC.
  • the cyclic compound preferably has a Hansen solubility parameter (HSP) ⁇ p of 6 to 15. Having a boiling point and solubility parameter in the above range is preferable in view of compatibility with other components included in the etching liquid composition.
  • the cyclic compound is not particularly limited as long as it satisfies the boiling point and the solubility parameter of Hansen.
  • Examples thereof include piperazine, morpholine, pyridine, piperidine, piperidone, pyrrolidine, pyrrolidone, Imidazolidinone type, furan type, aniline type, toluidine type, amine type, lactone type, carbonate type, carbazole type compound, etc. are mentioned.
  • piperazine N-methylpiperazine, N-ethylpiperazine, N-vinylpiperazine, N-vinylmethylpiperazine, N-vinylethylpiperazine, N-vinyl-N'-methylpiperazine, N-acryloylpiperazine, N-acryloyl-N'-methylpiperazine, hydroxyethylpiperazine, N- (2-aminoethyl) piperazine, N, N'-dimethylpiperazine; Morpholine, N-methylmorpholine, N-ethylmorpholine, N-phenylmorpholine, N-vinylmorpholine, N-vinylmethylmorpholine, N-vinylethylmorpholine, N-acryloylmorpholine, N Cocomorpholine, N- (2-aminoethyl) morpholine, N- (2-cyanoethyl) morpholine, N- (2-hydroxyethyl) morpho
  • the cyclic compound is preferably included in 0.1 to 50% by weight, more preferably 1 to 10% by weight relative to the total weight of the composition. If the content falls within the above range, uniformity may be improved by effectively improving the wettability of the silicon wafer surface to minimize texture quality variation.
  • the cyclic compound may be mixed with a water soluble polar solvent.
  • the water-soluble polar solvent is not particularly limited as long as it is compatible with other components and water included in the texture etching solution composition of the crystalline silicon wafer, and both proton or aprotic polar solvents can be used.
  • ethylene glycol monomethyl ether As a proton polar solvent, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, polyethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monoethyl ether, ethylene glycol monobutyl ether Ether compounds such as diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, propylene glycol monomethyl ether and dipropylene glycol monomethyl ether; Alcohol compounds such as propanol, butanol, isopropanol, tetrahydroperfuryl alcohol, ethylene glycol, propylene glycol and the like, and the like, and aprotic polar solvents such as N-methylformamide, N, N-dimethylformamide, etc.
  • aprotic polar solvents such as N-methylformamide, N, N-dimethylformamide, etc.
  • Sulfoxide compounds such as dimethyl sulfoxide and sulfolane
  • Phosphate type compounds such as a triethyl phosphate and a tributyl phosphate, etc. are mentioned. These can be used individually or in mixture of 2 or more types.
  • the water soluble polar solvent may be included in an amount of 0.1 to 30% by weight based on 100% by weight of the cyclic compound.
  • the texture etching solution composition of the crystalline silicon wafer of the present invention may further include a surfactant.
  • a surfactant used in the art may be used, and preferably a fluorine-based surfactant may be used.
  • the fluorine-based surfactant lowers the surface tension of the texture solution to improve the wettability of the crystalline silicon surface to prevent over-etching by the alkali compound.
  • fluorine-based surfactants examples include anionic surfactants, cationic surfactants, amphoteric surfactants, and nonionic surfactants, which may be used alone or in combination of two or more. .
  • anionics such as perfluoroalkyl carboxylate, perfluoroalkyl sulfonate, perfluoroalkyl sulfate, and fluoroalkyl phosphate
  • Cationic systems such as perfluoroalkyl amine salts and perfluoroalkyl quaternized ammonium salts
  • Amphoteric ionic systems such as perfluoroalkyl carboxy betaine and perfluoroalkyl sulfobetaine
  • nonionics such as fluorinated alkyl polyoxyethylene and perfluoroalcohol polyoxyethylene.
  • the alkyl group in the surfactant may be an alkyl group having 1 to 10 carbon atoms.
  • the surfactant may be included in an amount of 10 -6 to 10% by weight, preferably 10 -4 to 1% by weight based on the total weight of the composition. If the content falls within the above range, uniformity may be improved by effectively improving the wettability of the silicon wafer surface to minimize texture quality variation.
  • the texture etchant composition of the crystalline silicon wafer of the present invention may further comprise a silica compound.
  • the silica compound is a component that allows the crystalline silicon wafer surface to have a fine pyramid shape by physically adsorbing on the surface of the crystalline silicon wafer to serve as a kind of mask, and has an excellent effect on the uniform surface of the wafer. Indicates.
  • silica compound which can be used by this invention a powder type, a colloidal dispersion type, a liquid metal silicate compound, etc. are mentioned. Specifically, fine powder silica; Colloidal silica dispersion stabilized with Na 2 O; Colloidal silica dispersion stabilized with K 2 O; Colloidal silica dispersion stabilized with acid solution; Colloidal silica dispersion stabilized with NH 3 ; Colloidal silica dispersion stabilized with at least one organic solvent selected from the group consisting of ethyl alcohol, propyl alcohol, ethylene glycol, methyl ethyl ketone and methyl isobutyl ketone; Liquid sodium silicate; Liquid potassium silicate; And liquid lithium silicate etc. can be mentioned, These can be used individually or in mixture of 2 or more types, respectively.
  • the silica compound may be included in an amount of 10 ⁇ 5 to 10 wt% based on the total weight of the texture etching solution composition of the crystalline silicon wafer, and preferably 10 ⁇ 4 to 1 wt%. If the content falls within the above range, it is possible to easily form a fine pyramid on the surface of the crystalline silicon wafer.
  • the texture etching solution composition of the crystalline silicon wafer according to the present invention after appropriately adopting the above components according to specific needs, water is added to adjust the overall composition so that the remaining amount of the total composition is occupied by water.
  • the components are adjusted to have the aforementioned content ranges.
  • the kind of water is not specifically limited, It is preferable that it is deionized distilled water, More preferably, it is preferable that the specific resistance value is 18 kW / cm or more as deionized distilled water for a semiconductor process.
  • the texture etching solution composition of the crystalline silicon wafer of the present invention comprising the above components, in particular, by including a polymer having a polycarboxylic acid system to minimize the quality variation of the texture by position on the surface of the crystalline silicon wafer, that is, the uniformity of the texture
  • a polymer having a polycarboxylic acid system to minimize the quality variation of the texture by position on the surface of the crystalline silicon wafer, that is, the uniformity of the texture
  • the absorption of sunlight can be maximized and the light reflectance can be lowered to increase the light efficiency.
  • there is no need to add a separate etchant component during the texture etching process and there is no need to introduce an air rating equipment, which is advantageous in terms of productivity and cost.
  • the texture etching liquid composition of the crystalline silicon wafer of the present invention can be applied to all conventional etching processes, such as dip, spray and single wafer etching processes.
  • the present invention provides a texture etching method of a crystalline silicon wafer using the texture etching liquid composition of the crystalline silicon wafer.
  • Texture etching method of the crystalline silicon wafer is a step of depositing the crystalline silicon wafer in the texture etching liquid composition of the crystalline silicon wafer of the present invention, or spraying the texture etching liquid composition of the crystalline silicon wafer of the present invention on the crystalline silicon wafer Or both of the above steps.
  • the number of depositions and sprays is not particularly limited, and the order of both deposition and spraying is not limited.
  • Deposition, spraying or depositing and spraying may be performed for 30 seconds to 60 minutes at a temperature of 50 to 100 ° C.
  • the texture etching method of the crystalline silicon wafer of the present invention does not need to introduce a separate air-rating apparatus for supplying oxygen, so it is economical in terms of initial production and processing costs, and is uniform even in a simple process. It is possible to form the structure, and the shape of the pyramid can also reduce the reflectance by having a structure in which the inclined surface is indented into the pyramid.
  • the single crystal silicon wafers were immersed in the etching liquid composition for texture of the crystalline silicon wafers of Examples 1 to 15 and Comparative Examples 1 to 4, respectively, to etch.
  • the texture conditions at this time were the temperature of 80 degreeC, and time 20 minutes.
  • Texture uniformity was evaluated using visual evaluation (digital camera), optical microscope, SEM, and pyramid size using SEM.
  • Texture reflectance measured the average reflectance when irradiating light with a wavelength range of 400-800 nm using ultraviolet-ray.
  • FIG. 1 is a SEM photograph showing the texture of a single crystal silicon wafer etched using the etching liquid composition for the texture of the crystalline silicon wafer of Example 1, and the texture of the crystalline silicon wafer of Example 1 in FIG. SEM photographs showing the texture pyramid structure of the single crystal silicon wafer etched using the etchant composition were shown. 1 and 2, it can be seen that the texture is uniformly formed over the entire surface of the silicon wafer.
  • Comparative Example 4 shows an inferior effect than the embodiment in terms of texture uniformity, pyramid size, reflectance.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne une composition pour solution de gravure de texture d'une plaquette de silicium cristallin et un procédé de gravure de texture. L'invention porte plus particulièrement sur une composition pour solution de gravure de texture contenant un polymère à base d'acide polycarboxylique et son sel, pour former une structure pyramidale fine uniforme sur la surface d'une plaquette de silicium cristallin, en vue de constituer ainsi une texture présentant une faible réflexion optique. L'invention a également trait à un procédé de gravure de texture.
PCT/KR2012/007131 2011-12-16 2012-09-05 Composition pour solution de gravure de texture d'une plaquette de silicium cristallin, et procédé de gravure de texture WO2013089338A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0136112 2011-12-16
KR1020110136112A KR20130068759A (ko) 2011-12-16 2011-12-16 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법

Publications (1)

Publication Number Publication Date
WO2013089338A1 true WO2013089338A1 (fr) 2013-06-20

Family

ID=48612753

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/007131 WO2013089338A1 (fr) 2011-12-16 2012-09-05 Composition pour solution de gravure de texture d'une plaquette de silicium cristallin, et procédé de gravure de texture

Country Status (3)

Country Link
KR (1) KR20130068759A (fr)
TW (1) TW201329207A (fr)
WO (1) WO2013089338A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104342702A (zh) * 2013-08-05 2015-02-11 南京科乃迪科环保科技有限公司 一种用于单晶硅或多晶硅酸性制绒的辅助化学组合物及其应用
JP2017509152A (ja) * 2014-03-07 2017-03-30 東友ファインケム株式会社Ｄｏｎｇｗｏｏ Ｆｉｎｅ−Ｃｈｅｍ Ｃｏ．， Ｌｔｄ． 結晶性シリコンウェーハのテクスチャーエッチング液組成物及びテクスチャーエッチング方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015020243A1 (fr) * 2013-08-06 2015-02-12 동우화인켐 주식회사 Composition de solution de gravure de texture pour plaquettes de silicium cristallin et procédé de gravure de texture
KR101863536B1 (ko) * 2014-03-07 2018-06-01 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007129555A1 (fr) * 2006-05-02 2007-11-15 Mimasu Semiconductor Industry Co., Ltd. Procédé de fabrication DE substrat de semi-conducteur, substrat de semi-conducteur solaire et liquide d'attaque chimique
WO2009072438A1 (fr) * 2007-12-04 2009-06-11 Mimasu Semiconductor Industry Co., Ltd. Procédé de fabrication de substrat en silicium polycristallin et substrat en silicium polycristallin
JP2010141139A (ja) * 2008-12-11 2010-06-24 Shinryo Corp シリコン基板のエッチング液およびシリコン基板の表面加工方法
WO2010085928A1 (fr) * 2009-02-02 2010-08-05 Sovello Ag Mélange de gravure pour la production d'une surface structurée sur des substrats en silicium
KR20100093098A (ko) * 2007-12-06 2010-08-24 프라운호퍼 게젤샤프트 쭈르 푀르데룽 데어 안겐반텐 포르슝 에. 베. 웨이퍼의 표면 처리용 텍스쳐링 및 세정제 및 그것의 사용
KR20110009641A (ko) * 2009-07-22 2011-01-28 도요 잉키 세이조 가부시끼가이샤 도전부재용 감압식 접착제 조성물, 및 이를 이용하여 제조된 적층체
JP2011256264A (ja) * 2010-06-09 2011-12-22 Toyo Ink Sc Holdings Co Ltd 粘着剤組成物、及びそれを用いてなる粘着積層体
KR20120044013A (ko) * 2010-10-27 2012-05-07 주식회사 엘지화학 터치 패널
KR20120056230A (ko) * 2010-11-24 2012-06-01 (주)엘지하우시스 터치패널용 점착제 조성물, 점착필름 및 터치패널

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007129555A1 (fr) * 2006-05-02 2007-11-15 Mimasu Semiconductor Industry Co., Ltd. Procédé de fabrication DE substrat de semi-conducteur, substrat de semi-conducteur solaire et liquide d'attaque chimique
WO2009072438A1 (fr) * 2007-12-04 2009-06-11 Mimasu Semiconductor Industry Co., Ltd. Procédé de fabrication de substrat en silicium polycristallin et substrat en silicium polycristallin
KR20100093098A (ko) * 2007-12-06 2010-08-24 프라운호퍼 게젤샤프트 쭈르 푀르데룽 데어 안겐반텐 포르슝 에. 베. 웨이퍼의 표면 처리용 텍스쳐링 및 세정제 및 그것의 사용
JP2010141139A (ja) * 2008-12-11 2010-06-24 Shinryo Corp シリコン基板のエッチング液およびシリコン基板の表面加工方法
WO2010085928A1 (fr) * 2009-02-02 2010-08-05 Sovello Ag Mélange de gravure pour la production d'une surface structurée sur des substrats en silicium
KR20110009641A (ko) * 2009-07-22 2011-01-28 도요 잉키 세이조 가부시끼가이샤 도전부재용 감압식 접착제 조성물, 및 이를 이용하여 제조된 적층체
JP2011256264A (ja) * 2010-06-09 2011-12-22 Toyo Ink Sc Holdings Co Ltd 粘着剤組成物、及びそれを用いてなる粘着積層体
KR20120044013A (ko) * 2010-10-27 2012-05-07 주식회사 엘지화학 터치 패널
KR20120056230A (ko) * 2010-11-24 2012-06-01 (주)엘지하우시스 터치패널용 점착제 조성물, 점착필름 및 터치패널

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104342702A (zh) * 2013-08-05 2015-02-11 南京科乃迪科环保科技有限公司 一种用于单晶硅或多晶硅酸性制绒的辅助化学组合物及其应用
JP2017509152A (ja) * 2014-03-07 2017-03-30 東友ファインケム株式会社Ｄｏｎｇｗｏｏ Ｆｉｎｅ−Ｃｈｅｍ Ｃｏ．， Ｌｔｄ． 結晶性シリコンウェーハのテクスチャーエッチング液組成物及びテクスチャーエッチング方法

Also Published As

Publication number Publication date
KR20130068759A (ko) 2013-06-26
TW201329207A (zh) 2013-07-16

Similar Documents

Publication Publication Date Title
WO2013089338A1 (fr) Composition pour solution de gravure de texture d'une plaquette de silicium cristallin, et procédé de gravure de texture
WO2012169721A1 (fr) Composition de type solution de gravage texturante et procédé de gravage texturant pour plaquette de silicium cristallin
WO2013073793A1 (fr) Composition de solution de gravure pour un film d'alliage de molybdène et un film d'oxyde d'indium
WO2022071704A1 (fr) Électrode
KR20120015484A (ko) 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법
WO2013100318A1 (fr) Composition d'agent de gravure de texture pour une tranche de silicium cristallin, et procédé d'attaque chimique de texture
WO2011136594A2 (fr) Composition de cuivre et de titane pour solution de gravure de couche métallique
WO2011019222A9 (fr) Composition d'agent de gravure destinée à former des interconnexions de cuivre
KR20120015485A (ko) 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법
KR20130002258A (ko) 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
WO2012169722A1 (fr) Composition de type solution de gravage texturante et procédé de gravage texturant pour plaquette de silicium cristallin
WO2012144733A2 (fr) Composition d'agent de gravure pour texturation pour tranche de silicium cristallin et procédé de gravure pour texturation
WO2012091395A2 (fr) Composition pour une solution de gravure de texture, et procédé de gravure de texture pour tranches de silicium cristallin
WO2011052987A2 (fr) Composition de solution d'attaque chimique
WO2015190727A1 (fr) Composition d'encre polymère conductrice
WO2017069560A1 (fr) Composition de texturation de silicium et son procédé de préparation
WO2013058477A2 (fr) Composition fluide d'attaque chimique de texture et procédé d'attaque chimique de texture pour des tranches de silicium cristallin
WO2015133730A1 (fr) Composition de gravure-texturation pour une tranche de silicium cristallin, et procédé de gravure-texturation
KR20140082220A (ko) 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
WO2015020243A1 (fr) Composition de solution de gravure de texture pour plaquettes de silicium cristallin et procédé de gravure de texture
KR20110047130A (ko) 식각액 조성물
WO2013002502A2 (fr) Composition de gravure de texture pour une tranche de silicium cristallin et procédé de gravure de texture de celle-ci
KR20140082222A (ko) 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
KR102122049B1 (ko) 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
WO2011062400A2 (fr) Procédé de fabrication de substrat en réseau pour écran à cristaux liquides

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12858311

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12858311

Country of ref document: EP

Kind code of ref document: A1