WO2015020243A1 - Composition de solution de gravure de texture pour plaquettes de silicium cristallin et procédé de gravure de texture - Google Patents

Composition de solution de gravure de texture pour plaquettes de silicium cristallin et procédé de gravure de texture Download PDF

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WO2015020243A1
WO2015020243A1 PCT/KR2013/007096 KR2013007096W WO2015020243A1 WO 2015020243 A1 WO2015020243 A1 WO 2015020243A1 KR 2013007096 W KR2013007096 W KR 2013007096W WO 2015020243 A1 WO2015020243 A1 WO 2015020243A1
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texture
cellulose
composition
crystalline silicon
etching
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PCT/KR2013/007096
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English (en)
Korean (ko)
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박면규
이재연
임대성
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동우화인켐 주식회사
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Publication of WO2015020243A1 publication Critical patent/WO2015020243A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers

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  • the present invention relates to a texture etching solution composition and a texture etching method of the crystalline silicon wafer that can improve the light efficiency by minimizing the texture quality variation of each position on the surface of the crystalline silicon wafer.
  • Solar cells which are rapidly spreading in recent years, are electronic devices that directly convert solar energy, which is clean energy, into electricity as a next-generation energy source, and diffuse phosphorus on its surface based on P-type silicon semiconductors containing boron in silicon. It consists of the PN junction semiconductor substrate in which the N type silicon semiconductor layer was formed.
  • the surface of the solar cell silicon wafer constituting the PN junction semiconductor substrate is formed into a fine pyramid structure and the antireflection film is treated.
  • the surface of the silicon wafer textured with the fine pyramid structure increases the intensity of the light absorbed by lowering the reflectance of incident light having a wide wavelength band, thereby improving the performance of the solar cell.
  • U.S. Patent No. 4,137,123 discloses 0.5-10 weight in an anisotropic etching solution containing 0-75% by volume of ethylene glycol, 0.05-50% by weight of potassium hydroxide and the remaining amount of water.
  • a silicon texture etching solution in which% silicon is dissolved is disclosed.
  • this etchant can cause pyramid formation defects to increase the light reflectance and cause a decrease in efficiency.
  • European Patent No. 0477424 discloses a texture etching method of supplying oxygen to a texture etching solution in which silicon is dissolved in ethylene glycol, potassium hydroxide and residual water, that is, performing an air rating process.
  • this etching method has a disadvantage in that it causes poor pyramid formation, which leads to an increase in light reflectivity and a decrease in efficiency, and requires the installation of a separate air rating equipment.
  • Korean Patent No. 0180621 discloses a texture etching solution mixed at a ratio of 0.5-5% potassium hydroxide solution, 3-20% by volume of isopropyl alcohol, and 75-96.5% by volume of deionized water
  • US Patent No. 6,451,218 No. discloses a texture etching solution comprising an alkali compound, isopropyl alcohol, a water soluble alkaline ethylene glycol and water.
  • these etching solutions contain isopropyl alcohol having a low boiling point and need to be added during the texturing process, it is not economical in terms of productivity and cost, and the addition of isopropyl alcohol causes a temperature gradient of the etching solution, resulting in the surface of the silicon wafer.
  • the texture quality variation of each position may increase, resulting in poor uniformity.
  • Patent Document 1 US Patent Publication 4,137,123
  • Patent Document 2 European Patent Publication 0477424
  • Patent Document 3 Korean Registered Patent Publication 10-0180621
  • an object of the present invention is to provide a texture etching liquid composition of a crystalline silicon wafer that does not require the addition of a separate etching liquid component and the application of an air rating process during the etching process.
  • Another object of the present invention is to provide a texture etching method using the texture etching liquid composition of the crystalline silicon wafer.
  • a texture etching liquid composition of a crystalline silicon wafer comprising an inorganic salt of the general formula (1):
  • A is selected from the group consisting of NH 4 + , K + , Na + and Li + ;
  • B is SO 4 2- or PO 4 3- ;
  • y is 2-x when B is SO 4 2- and 3-x when B is PO 4 3- ;
  • x and y are integers greater than zero.
  • the inorganic salt of Formula 1 is the first potassium phosphate (potassium phosphate monobasic), the second potassium phosphate (dipotassium hydrogen phosphate), the first sodium phosphate (basic sodium basic), the second sodium phosphate (disodium hydrogen phosphate, ammonium phosphate monobasic, ammonium phosphate dibasic, ammonium phosphate dibasic, potassium hydrogen sulfate, sodium hydrogen sulfate and ammonium hydrogen sulfate At least one selected from the group consisting of Texture etching liquid composition of crystalline silicon wafer.
  • the inorganic salt of the formula (1) is a texture etching solution composition of the crystalline silicon wafer containing 0.1 to 10% by weight relative to the total 100% by weight of the etching solution composition.
  • the texture etching liquid composition of the crystalline silicon wafer further comprising an alkali compound.
  • composition of claim 4, wherein the alkali compound is at least one selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium and tetrahydroxyethylammonium.
  • the texture etching liquid composition of the crystalline silicon wafer further comprising a polysaccharide.
  • polysaccharide is at least one selected from the group consisting of glucan compounds, fructan compounds, mannan compounds, galactan compounds, and metal salts thereof.
  • the polysaccharide is cellulose, dimethylaminoethyl cellulose, diethylaminoethyl cellulose, ethyl hydroxyethyl cellulose, methyl hydroxyethyl cellulose, 4-aminobenzyl cellulose, triethylaminoethyl cellulose, cyanoethyl Cellulose, ethyl cellulose, methyl cellulose, carboxymethyl cellulose, carboxyethyl cellulose, hydroxyethyl cellulose, hydroxypropyl cellulose, alginic acid, amylose, amylopectin, pectin, starch, dextrin, ⁇ -cyclodextrin, ⁇ -cyclodextrin, ⁇ 1 selected from the group consisting of -cyclodextrin, hydroxypropyl- ⁇ -cyclodextrin, methyl- ⁇ -cyclodextrin, dextran, dextransulfate sodium, sapon
  • the texture etching solution composition of claim 1 further comprising a polymer polymerized with a monomer substituted with a cyclic compound having 4 to 10 carbon atoms containing at least one nitrogen atom.
  • the monomer is N-vinylpyrrolidone, N-acryloyl morpholine, N-vinyl succinimide, N-acryloxy succinimide, N-vinyl caprolactam, N-vinyl carba
  • the polymer has a weight average molecular weight of 1,000 to 1,000,000 crystalline silicon wafer texture etching liquid composition.
  • the cyclic compound has a boiling point of 100 °C or more texture etching liquid composition of the crystalline silicon wafer.
  • composition of claim 15, wherein the cyclic compound has a solubility parameter of Hansen of 6 to 15 in the texture etching solution composition of the crystalline silicon wafer.
  • the etching method according to the above 18, comprising spraying the etchant composition at a temperature of 50 to 100 °C for 30 seconds to 60 minutes.
  • the texture etching liquid composition and the texture etching method of the crystalline silicon wafer of the present invention by controlling the difference in the etching rate with respect to the silicon crystal direction to prevent over-etching by the alkali compound, the quality variation of the texture by the position of the surface of the crystalline silicon wafer Minimize, ie, improve the uniformity of the texture to maximize the absorption of sunlight.
  • FIG. 1 is an optical micrograph showing the texture of a single crystal silicon wafer etched using the etching liquid composition for the texture of the crystalline silicon wafer of Example 1.
  • FIG. 1 is an optical micrograph showing the texture of a single crystal silicon wafer etched using the etching liquid composition for the texture of the crystalline silicon wafer of Example 1.
  • FIG. 2 is a SEM photograph showing the surface of a single crystal silicon wafer textured with the etching liquid composition for texture of the crystalline silicon wafer of Example 1.
  • FIG. 2 is a SEM photograph showing the surface of a single crystal silicon wafer textured with the etching liquid composition for texture of the crystalline silicon wafer of Example 1.
  • FIG. 3 is an optical micrograph showing the surface of a single crystal silicon wafer textured with the etching liquid composition for texture of the crystalline silicon wafer of Comparative Example 1.
  • the present invention by including the inorganic salt of the formula (1), by forming a fine pyramid structure on the surface of the crystalline silicon wafer by controlling the difference in the etching rate with respect to the silicon crystal direction to prevent over-etching by the alkali compound by position
  • the present invention relates to a texture etchant composition and texture etching method of a crystalline silicon wafer which minimizes the quality variation of the texture to increase light efficiency.
  • the texture etching solution composition of the crystalline silicon wafer of the present invention is characterized in that it comprises an inorganic salt of the formula (1).
  • A is selected from the group consisting of NH 4 + , K + , Na + and Li + ;
  • B is SO 4 2- or PO 4 3- ;
  • y is 2-x when B is SO 4 2- and 3-x when B is PO 4 3- ;
  • x and y are integers greater than zero.
  • the inorganic salt of Chemical Formula 1 according to the present invention can minimize the quality variation of the texture by controlling the difference in the etching rate with respect to the silicon crystal direction to prevent overetching by the alkali compound.
  • the kind of the inorganic salt of the formula (I) is not particularly limited, but for example, first potassium phosphate monobasic, dipotassium hydrogen phosphate, sodium phosphate monobasic, and second sodium phosphate phosphate, ammonium phosphate monobasic, ammonium phosphate dibasic, ammonium phosphate dibasic, potassium hydrogen sulfate, sodium hydrogen sulfate, ammonium hydrogen sulfate, etc. Can be mentioned. These can be used individually or in mixture of 2 or more types.
  • the inorganic salt of Formula 1 may be included in an amount of 0.1 to 10% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer, preferably 0.1 to 3% by weight. If the content falls within the above range, the effect of controlling the etching rate difference with respect to the crystal direction of silicon is maximized.
  • the etching solution composition according to the present invention may further include an alkali compound.
  • the alkali compound may be used without limitation as long as it is an alkali compound commonly used in the art as a component for etching the surface of the crystalline silicon wafer.
  • alkali compound examples include potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium, tetrahydroxyethylammonium, and the like, with potassium hydroxide and sodium hydroxide being preferred. These can be used individually or in mixture of 2 or more types.
  • the alkali compound is preferably included in an amount of 0.1 to 20% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer, more preferably 1 to 5% by weight. When the content falls within the above range, the silicon wafer surface can be etched.
  • the texture etchant composition of the crystalline silicon wafer of the present invention may further comprise a polysaccharide.
  • Polysaccharide is a sugar in which two or more monosaccharides are glycosidic bonds to make a large molecule, and prevents overetching and accelerated etching by alkaline compounds to form a uniform fine pyramid and at the same time the hydrogen bubbles generated by etching It is a component that prevents bubble stick phenomenon by quickly falling from the silicon wafer surface.
  • polysaccharides examples include glucan compounds, fructan compounds, mannan compounds, galactan compounds, or metal salts thereof.
  • glucan compounds and metal salts thereof e.g., Alkali metal salts
  • These can be used individually or in mixture of 2 or more types.
  • glucan-based compound examples include cellulose, dimethylaminoethyl cellulose, diethylaminoethyl cellulose, ethyl hydroxyethyl cellulose, methyl hydroxyethyl cellulose, 4-aminobenzyl cellulose, triethylaminoethyl cellulose, cyanoethyl cellulose, ethyl cellulose, Methyl cellulose, carboxymethyl cellulose, carboxyethyl cellulose, hydroxyethyl cellulose, hydroxypropyl cellulose, alginic acid, amylose, amylopectin, pectin, starch, dextrin, ⁇ -cyclodextrin, ⁇ -cyclodextrin, ⁇ -cyclodextrin, hydrate Oxypropyl- ⁇ -cyclodextrin, methyl- ⁇ -cyclodextrin, dextran, dextransulfate sodium, saponin, glycogen, zymoi
  • the polysaccharide may have an average molecular weight of 5,000 to 1,000,000, preferably 50,000 to 200,000.
  • the polysaccharide may be included in an amount of 10 -9 to 0.5% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer, and preferably 10 -6 to 0.1% by weight. If the content falls within the above range, it is possible to effectively prevent over-etching and etching acceleration. If the content is more than 0.5% by weight, it is difficult to form the desired fine pyramid by drastically lowering the etching rate by the alkali compound.
  • the texture etchant composition of the crystalline silicon wafer of the present invention may further include a polymer polymerized with a monomer substituted with a cyclic compound having 4 to 10 carbon atoms containing at least one nitrogen atom.
  • the polymer can minimize the quality variation of the texture by controlling the difference in the etching rate with respect to the silicon crystal direction, thereby preventing the overetching by the alkali compound, and the bubble stick phenomenon by rapidly reducing the amount of hydrogen bubbles generated by etching. This also suppresses the occurrence.
  • the polymer according to the present invention is formed by polymerizing a monomer substituted with a cyclic compound having 4 to 10 carbon atoms containing at least one nitrogen hetero atom, and the monomer is at least one each of oxygen and sulfur atoms alone or all in addition to nitrogen. It may be further included in the ring structure.
  • Specific examples of such monomers include N-vinylpyrrolidone, N-acryloyl morpholine, N-vinylsuccinimide, N-acryloxysuccinimide, N-vinylcaprolactam, N-vinylcarbazole, It may be one or more selected from the group consisting of N-acryloylpyrrolidine and the like.
  • the polymer according to the present invention preferably has a weight average molecular weight of 1,000 to 1,000,000 in that it can lower the reflectance by increasing the base angle of the pyramid and can form a uniform pyramid on the entire surface of the single crystal silicon wafer.
  • the polymer according to the present invention is preferable that the boiling point is higher than 100 °C in terms of reducing the amount of use, more preferably 150 to 400 °C.
  • the polymer according to the present invention may be included in an amount of 10 -12 to 1% by weight based on the total weight of the etching solution composition. When the content falls within the above range, the effect of controlling the difference in etching rate with respect to the crystal direction of silicon is maximized.
  • the polymer according to the invention may be mixed with a water soluble polar solvent.
  • the water-soluble polar solvent is not particularly limited as long as it is compatible with other components and water included in the texture etching solution composition of the crystalline silicon wafer, and both proton or aprotic polar solvents can be used.
  • ethylene glycol monomethyl ether As a proton polar solvent, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, polyethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monoethyl ether, ethylene glycol monobutyl ether Ether compounds such as diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, propylene glycol monomethyl ether and dipropylene glycol monomethyl ether; Alcohol compounds such as propanol, butanol, isopropanol, tetrahydroperfuryl alcohol, ethylene glycol, propylene glycol and the like, and the like, and aprotic polar solvents such as N-methylformamide, N, N-dimethylformamide, etc.
  • aprotic polar solvents such as N-methylformamide, N, N-dimethylformamide, etc.
  • Sulfoxide compounds such as dimethyl sulfoxide and sulfolane
  • Phosphate type compounds such as a triethyl phosphate and a tributyl phosphate, etc. are mentioned. These can be used individually or in mixture of 2 or more types.
  • the texture etchant composition of the crystalline silicon wafer of the present invention may further comprise a cyclic compound.
  • the cyclic compound may be a cyclic hydrocarbon having 4-10 carbon atoms; And a heterocyclic hydrocarbon having 4 to 10 carbon atoms, including one or more heteroatoms of N, O, or S, wherein the wettability of the surface of the crystalline silicon wafer is improved to prevent over-etching by an alkali compound.
  • a component that can prevent the bubble stick phenomenon from occurring by rapidly reducing the amount of hydrogen bubbles generated by etching By minimizing the quality variation of the texture by preventing it, it is also a component that can prevent the bubble stick phenomenon from occurring by rapidly reducing the amount of hydrogen bubbles generated by etching.
  • the boiling point can be used in a small amount compared to isopropyl alcohol is conventionally used as well as increase the number of treatment for the same amount of use.
  • a boiling point of a cyclic compound is high as 100 degreeC or more, More preferably, it is 150-400 degreeC.
  • the cyclic compound has a Hansen solubility parameter (HSP) of 6 to 15 in terms of compatibility with other components included in the etching liquid composition.
  • the cyclic compound is not particularly limited as long as it satisfies the boiling point and the solubility parameter of Hansen.
  • Examples thereof include piperazine, morpholine, pyridine, piperidine, piperidone, pyrrolidine, pyrrolidone, Imidazolidinone type, furan type, aniline type, toluidine type, amine type, lactone type, carbonate type, carbazole type compound, etc. are mentioned.
  • piperazine N-methylpiperazine, N-ethylpiperazine, N-vinylpiperazine, N-vinylmethylpiperazine, N-vinylethylpiperazine, N-vinyl-N'-methylpiperazine, N-acryloylpiperazine, N-acryloyl-N'-methylpiperazine, hydroxyethylpiperazine, N- (2-aminoethyl) piperazine, N, N'-dimethylpiperazine; Morpholine, N-methylmorpholine, N-ethylmorpholine, N-phenylmorpholine, N-vinylmorpholine, N-vinylmethylmorpholine, N-vinylethylmorpholine, N-acryloylmorpholine, N Cocomorpholine, N- (2-aminoethyl) morpholine, N- (2-cyanoethyl) morpholine, N- (2-hydroxyethyl) morpho
  • the cyclic compound is preferably included in an amount of 0.1 to 50% by weight, more preferably 1 to 10% by weight based on 100% by weight of the total amount of the texture etching solution composition of the crystalline silicon wafer. If the content falls within the above range, uniformity may be improved by effectively improving the wettability of the silicon wafer surface to minimize texture quality variation.
  • the cyclic compound may be mixed with a water soluble polar solvent.
  • the water-soluble polar solvent the same solvent as that of the polymer may be used.
  • the water soluble polar solvent may be included in an amount of 0.1 to 30% by weight based on 100% by weight of the cyclic compound.
  • the texture etchant composition of the crystalline silicon wafer of the present invention may comprise fatty acids or metal salts thereof; And at least one additive selected from the group consisting of a polyoxyethylene-based (POE) compound, a polyoxypropylene-based (POP) compound, and a surfactant which is a copolymer thereof.
  • POE polyoxyethylene-based
  • POP polyoxypropylene-based
  • surfactant which is a copolymer thereof.
  • Fatty acids and their metal salts are used in conjunction with polysaccharides to prevent overetching by alkali compounds, forming a uniform fine pyramid and at the same time quickly dropping the hydrogen bubbles generated by etching from the surface of the silicon wafer to prevent the occurrence of bubble sticking. It is an ingredient to say.
  • Fatty acids are carboxylic acids of hydrocarbon chains containing carboxyl groups, specifically acetic acid, propionic acid, butyric acid, valeric acid, enantiic acid, caprylic acid, pelagonic acid, capric acid, lauric acid, myristic acid, palmitic acid, Stearic acid, arachidic acid, behenic acid, lignoseric acid, serotic acid, eicosapentaenoic acid, docosahexaenoic acid, linoleic acid, ⁇ -linolenic acid, ⁇ -linolenic acid, dihomo- ⁇ -linolenic acid, arachidonic acid, Oleic acid, elideic acid, erucic acid, nerbonic acid, and the like.
  • the metal salt of a fatty acid may include an ester reactant of the above fatty acid with a metal salt such as NaOH or KOH. These can be used individually or in mixture of 2 or more types.
  • the fatty acid and its metal salt may be included in the amount of 10 -9 to 10% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer, preferably 10 -6 to 1% by weight. When the content falls within the above range, over-etching can be effectively prevented.
  • Polyoxyethylene-based (POE) compounds, polyoxypropylene-based (POP) compounds, and copolymers thereof are surfactants having a hydroxy group, and the activity of hydroxy ions [OH ⁇ ] in the texture etching solution composition is adjusted to control the Si 100 direction. Not only does it reduce the difference in etching rate in the Si 111 direction, but also improves the wettability of the surface of the crystalline silicon wafer, thereby rapidly dropping the hydrogen bubbles generated by etching to prevent the occurrence of bubble stick phenomenon.
  • polyoxyethylene type (POE) surfactant polyoxyethylene glycol, polyoxyethylene glycol methyl ether, polyoxyethylene monoallyl ether, polyoxyethylene neopentyl ether, polyethylene glycol mono (tristyrylphenyl) ether, polyoxy Ethylene cetyl ether, polyoxyethylene lauryl ether, polyoxyethylene oleyl ether, polyoxyethylene stearyl ether, polyoxyethylene tridecyl ether, polyoxyethylene decyl ether, polyoxyethylene octyl ether, polyoxyethylene bisphenol-A Polyoxyethylene having 6 to 30 carbon atoms in ether, polyoxyethylene glycerin ether, polyoxyethylene nonylphenyl ether, polyoxyethylene benzyl ether, polyoxyethylene phenyl ether, polyoxyethylene octylphenyl ether, polyoxyethylene phenol ether, alkyl group Ethylene alkylcyclohexyl ether, polyoxyethylene (
  • polypropylene glycol is mentioned as polyoxypropylene system (POP) surfactant.
  • POP polyoxypropylene system
  • polyoxyethylene-polyoxypropylene copolymer polyoxyethylene-polyoxypropylene copolymer
  • polyoxyethylene-polyoxypropylene decanyl ether copolymer polyoxyethylene Polyoxypropylene undecanyl ether copolymer
  • polyoxyethylene-polyoxypropylene dodecanyl ether copolymer polyoxyethylene-polyoxypropylene tetradecanyl ether copolymer
  • polyoxyethylene-polyoxypropylene 2-ethylhexyl ether air Copolymer polyoxyethylene-polyoxypropylene lauryl ether copolymer
  • polyoxyethylene-polyoxypropylene stearyl ether copolymer polyoxyethylene-polyoxypropylene stearyl ether copolymer
  • the polyoxyethylene-based (POE) compound, the polyoxypropylene-based (POP) compound, and a copolymer thereof and a surfactant thereof may be included in an amount of 10 -9 to 10% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer. Is 10 -6 to 1% by weight, more preferably 0.00001 to 0.1% by weight. When the content falls within the above range, it is possible to reduce the variation of the texture quality by location when the surface of the crystalline silicon wafer surface is textured.
  • the texture etching solution composition of the crystalline silicon wafer according to the present invention after appropriately adopting the above components according to specific needs, water is added to adjust the overall composition so that the remaining amount of the total composition is occupied by water.
  • the components are adjusted to have the aforementioned content ranges.
  • the kind of water is not specifically limited, It is preferable that it is deionized distilled water, More preferably, it is preferable that the specific resistance value is 18 kW / cm or more as deionized distilled water for a semiconductor process.
  • the texture etching solution composition of the crystalline silicon wafer of the present invention comprising the above components comprises, in particular, sulfate-based anionic surfactants to control the difference in etching rate with respect to the silicon crystal direction to overetch with alkali compounds.
  • sulfate-based anionic surfactants to control the difference in etching rate with respect to the silicon crystal direction to overetch with alkali compounds.
  • the texture etching liquid composition of the crystalline silicon wafer of the present invention can be applied to all conventional etching processes, such as dip, spray and single wafer etching processes.
  • the present invention provides a texture etching method of a crystalline silicon wafer using the texture etching liquid composition of the crystalline silicon wafer.
  • the texture etching method of the crystalline silicon wafer may include depositing the crystalline silicon wafer on the texture etching solution composition of the crystalline silicon wafer of the present invention, or spraying the texture etching solution composition of the crystalline silicon wafer of the present invention onto the crystalline silicon wafer. Step, or both.
  • the number of depositions and sprays is not particularly limited, and the order of both deposition and spraying is not limited.
  • Deposition, spraying or depositing and spraying may be performed for 30 seconds to 60 minutes at a temperature of 50 to 100 ° C.
  • the texture etching method of the crystalline silicon wafer of the present invention does not need to introduce a separate air-rating apparatus for supplying oxygen, so it is economical in terms of initial production and processing costs, and is uniform even in a simple process. It allows the formation of a structure.
  • the single crystal silicon wafers were immersed in the etching liquid composition for texture of the crystalline silicon wafers of Examples 1 to 10 and Comparative Examples 1 to 8, respectively.
  • the texture conditions at this time were the temperature of 80 degreeC, and 20 minutes.
  • Texture reflectance measured the average reflectance when irradiated with light having a wavelength range of 400 to 800nm using ultraviolet rays, the results are shown in Table 2.
  • the etching liquid composition for the texture of the silicon wafers of Examples 1 to 10 has a very good degree of pyramid formation on the entire surface of the single crystal silicon wafer. Due to the texture uniformity and pyramid shape, it can be seen that the silicon wafer texture formed by the embodiments has a low reflectance value of 10-11%.

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Abstract

La présente invention concerne une composition de solution de gravure de texture pour plaquettes de silicium cristallin, et un procédé de gravure de texture et, plus particulièrement : une composition de solution de gravure de texture pour plaquettes de silicium cristallin contenant un sel inorganique de formule chimique 1[AxHyB], et qui permet de prévenir une sur-gravure provoquée par un composé alcalin en régulant les différences de vitesse de gravure par rapport à une direction du silicium cristallin lors de la formation d'une structure pyramidale fine sur la surface de la plaquette de silicium cristallin, de sorte à réduire au minimum les déviations de la qualité de la texture selon la position afin d'augmenter l'efficacité lumineuse; et un procédé de gravure de texture.
PCT/KR2013/007096 2013-08-06 2013-08-06 Composition de solution de gravure de texture pour plaquettes de silicium cristallin et procédé de gravure de texture WO2015020243A1 (fr)

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KR20130068759A (ko) * 2011-12-16 2013-06-26 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040108297A1 (en) * 2002-09-18 2004-06-10 Memc Electronic Materials, Inc. Process for etching silicon wafers
KR20080084539A (ko) * 2007-03-15 2008-09-19 삼성전자주식회사 박막트랜지스터 액정표시장치의 식각액 조성물
KR20090029441A (ko) * 2007-09-18 2009-03-23 주식회사 동진쎄미켐 Ｔｆｔ-ｌｃｄ용 금속 배선 형성을 위한 식각액 조성물
KR20120136882A (ko) * 2011-06-10 2012-12-20 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
KR20130068759A (ko) * 2011-12-16 2013-06-26 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법

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