EP2474040A2 - Pâte d'aluminium pour électrode postérieure de cellule solaire - Google Patents

Pâte d'aluminium pour électrode postérieure de cellule solaire

Info

Publication number
EP2474040A2
EP2474040A2 EP10813967A EP10813967A EP2474040A2 EP 2474040 A2 EP2474040 A2 EP 2474040A2 EP 10813967 A EP10813967 A EP 10813967A EP 10813967 A EP10813967 A EP 10813967A EP 2474040 A2 EP2474040 A2 EP 2474040A2
Authority
EP
European Patent Office
Prior art keywords
aluminum
aluminum paste
solar cell
paste
glass frit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10813967A
Other languages
German (de)
English (en)
Other versions
EP2474040A4 (fr
Inventor
Chang-Mo Lee
Seung-Yong Lee
Dae-Sung Lim
Hyung-Sub Choi
Seung-Kwon Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongwoo Fine Chem Co Ltd
Original Assignee
Dongwoo Fine Chem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongwoo Fine Chem Co Ltd filed Critical Dongwoo Fine Chem Co Ltd
Publication of EP2474040A2 publication Critical patent/EP2474040A2/fr
Publication of EP2474040A4 publication Critical patent/EP2474040A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01038—Strontium [Sr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to aluminum paste for a back electrode of a solar cell.
  • crystalline silicon solar cells use a P-type silicon substrate having a thickness of 180 ⁇ 220 ⁇ m.
  • An N-type impurity layer having a thickness of 0.2 ⁇ 0.6 ⁇ m is formed on the front surface of the P-type silicon substrate, and a SiNx layer for antireflection and a front electrode are sequentially formed on the N-type impurity layer.
  • an aluminum electrode is formed on the back surface of the P-type silicon substrate. This aluminum electrode is formed by applying aluminum paste using screen printing or the like, drying the applied aluminum paste and then two-stage-firing the dried aluminum paste at low temperature (about 600°C) and at high temperature (800 ⁇ 950°C).
  • an Al-Si alloy layer is formed while aluminum diffuses into the P-type silicon substrate.
  • This Al-Si alloy layer forms a back surface field (BSF) layer preventing the recoupling of electrons generated from a solar cell and improving the collection efficiency of carriers generated from the solar cell.
  • the efficiency of the solar cell is influenced by the thickness and uniformity of the BSF layer. That is, when the thickness of the BSF layer is decreased, the efficiency of the solar cell is decreased, and when the thickness thereof is increased, the efficiency thereof is increased.
  • the thickness of a silicon wafer has been recently decreased in order to reduce the cost of solar cells.
  • the silicon wafer bows due to the difference in the expansion coefficient between the silicon wafer and aluminum, and thus the silicon wafer cracks.
  • the thickness of an aluminum electrode that functions as a back electrode it is required to decrease the thickness of an aluminum electrode that functions as a back electrode, and this purpose can be accomplished by decreasing the amount of aluminum paste applied.
  • the thickness of the BSF layer which is a back electric field layer, is decreased, so that the efficiency of the solar cell is deteriorated, and aluminum balls and/or bumps are increasingly formed in an electrode layer during a co-firing process.
  • the aluminum balls and/or bumps formed in the electrode layer decrease the flatness of the back surface of the silicon wafer, and stress is focused on these aluminum balls and/or bumps, thereby causing the solar cell to break during the solar cell manufacturing process or solar cell module manufacturing process.
  • Korean Patent Registration No. 10-0825580 discloses aluminum paste including aluminum powder having a particle size of 0.5 ⁇ 10 ⁇ m, an organic vehicle and a metal alkoxide
  • Korean Unexamined Patent Application Publication No. 10-2008-0068638 discloses aluminum paste including aluminum powder having a particle size of 2 ⁇ 20 ⁇ m, glass frit, an organic vehicle and a metal hydroxide
  • Korean Unexamined Patent Application Publication No. 10-2008-0057230 discloses aluminum paste including aluminum powder having a particle size of 2 ⁇ 20 ⁇ m, glass frit, an organic vehicle and a plasticizer
  • Korean Unexamined Patent Application Publication No. 10-2008-0104179 discloses aluminum paste including aluminum powder having a particle size of 4 ⁇ 10 ⁇ m, alkaline glass frit, boron ethoxide, titanium ethoxide, and fumed silica.
  • All of the aluminum pastes disclosed in the above patent documents include organic or inorganic additives in addition to aluminum powder, glass frit and an organic vehicle.
  • these additives are problematic because they exist as residues or include pores during a process of co-firing aluminum paste, so that the resistance and uniformity of the aluminum paste is decreased, thereby badly influencing the efficiency of a solar cell.
  • the above aluminum pastes are problematic because aluminum powder has a maximum particle size of 10 ⁇ 20 ⁇ m, so that it is difficult for aluminum paste to uniformly come into contact with the textured back surface of a solar cell, with the result that aluminum bumps can be probably formed by pores formed therein.
  • an object of the present invention is to provide aluminum paste for a back electrode of a solar cell, which can prevent the bowing of a solar cell and minimize the formation of aluminum balls and/or bumps and the occurrence of yellow discoloration during a co-firing process, which can greatly increase the values of short circuit current (Isc) and open circuit voltage (Voc), and which can remarkably improve the efficiency of a solar cell.
  • Isc short circuit current
  • Voc open circuit voltage
  • an aspect of the present invention provides aluminum paste for a back electrode of a solar cell, including, based on the total amount thereof: 65 ⁇ 75 wt% of aluminum powder having an average particle size distribution of 0.01 ⁇ 5 ⁇ m; 0.01 ⁇ 5 wt% of glass frit; and 20 ⁇ 34.90 wt% of an organic vehicle solution.
  • Another aspect of the present invention provides a method of manufacturing a solar cell, including a process of forming a back electrode using the aluminum paste.
  • the contact between aluminum paste and a textured silicon wafer has improved, the bowing of a solar cell can be prevented and the formation of aluminum balls and/or bumps and the occurrence of yellow discoloration can be minimized during the co-firing process, the values of short circuit current (Isc) and open circuit voltage (Voc) can be greatly increased, and the efficiency of a solar cell can be remarkably improved.
  • the present invention provides aluminum paste for a back electrode of a solar cell, including, based on the total amount thereof: 65 ⁇ 75 wt% of aluminum powder having an average particle size distribution of 0.01 ⁇ 5 ⁇ m; 0.01 ⁇ 5 wt% of glass frit; and 20 ⁇ 34.90 wt% of an organic vehicle solution.
  • the aluminum powder used in the aluminum paste of the present invention may have an average particle size distribution of 0.01 ⁇ 5 ⁇ m.
  • the surfaces of silicon solar cells are textured in order to enlarge the area that receives the solar light.
  • a monocrystalline silicon wafer is textured in the form of a pyramid, and the pyramid has a height of 2 ⁇ 15 ⁇ m and a width of 2 ⁇ 20 ⁇ m.
  • a polycrystalline silicon wafer is textured in the form of an irregular maze.
  • the textured silicon wafer is coated on the back surface thereof with aluminum paste by screen printing, gravure printing or offset printing, dried, and then co-fired to form an aluminum electrode.
  • the average particle size distribution of aluminum powder included in the aluminum paste be 0.01 ⁇ 5 ⁇ m.
  • the average particle size of aluminum powder is smaller than 0.01 ⁇ m, there is a problem in that aluminum bumps occur during the co-firing process conducted after the printing process, and the silicon wafer becomes increasingly bowed. Further, when the average particle size thereof is greater than 5 ⁇ m, the packing factor of aluminum particles decreases, thus decreasing the efficiency of the solar cell.
  • the solar cell manufactured in this way is advantageous in that yellow discoloration occurring in the aluminum electrode after the co-firing process can be prevented.
  • aluminum powder having an particle size distribution of 0.01 ⁇ 5 ⁇ m may be used.
  • the aluminum powder may be included in an amount of 65 ⁇ 75 wt%.
  • the amount of the aluminum powder included in the aluminum paste is below 65 wt%, there is a problem in that the aluminum layer printed after the calicination process becomes thin, so that a back surface field (BSF) layer is not sufficiently formed, thereby decreasing the efficiency of a solar cell.
  • BSF back surface field
  • the amount of the aluminum powder included therein is greater than 75 wt%, there is a problem in that the printed aluminum layer becomes excessively thick, thereby causing the silicon wafer to bow.
  • the glass frit may be included in an amount of 0.01 ⁇ 5 wt%, preferably 0.05 ⁇ 3 wt%, more preferably 0.1 ⁇ 1 wt%.
  • the glass frit may be Bi 2 O 3 -SiO 2 -Al 2 O 3 -B 2 O 3 -SrO.
  • the glass frit may include, but is not limited to, 20 ⁇ 30 mol% of Bi 2 O 3 , 5 ⁇ 15 mol% of Al 2 O 3 , 25 ⁇ 35 mol% of SiO 2 , 1 ⁇ 10 mol% of SrO, and 20 ⁇ 40 mol% of B 2 O 3 .
  • the softening point of the glass frit is increased, so that the aluminum paste is not softened enough during the co-firing process, with the result that the adhesion between the aluminum paste and the silicon wafer decreases, thereby decreasing the efficiency of the solar cell.
  • the glass frit includes an excessive amount of SrO, the softening point of the glass frit is excessively lowered, resulting in bumps in the aluminum electrode.
  • the glass frit used in the present invention may have a softening point of 400 ⁇ 600°C.
  • the softening point of the glass frit When the softening point of the glass frit is below 400°C, the thermal expansion coefficient of the glass frit is relatively increased, and thus the silicon wafer co-fired during the solar cell manufacturing process easily bows. Further, when the softening point thereof is above 600°C, the glass frit does not sufficiently melt in the co-firing process to such a degree that the adhesion is provided between the aluminum layer and the silicon wafer layer, thus deteriorating the adhesion therebetween.
  • the aluminum paste of the present invention may include, based on the total amount thereof, 20 ⁇ 34.90 wt% of an organic vehicle solution.
  • the organic vehicle solution is prepared by dissolving a polymer resin in an organic solvent, and, if necessary, may include a thixotropic agent, a wetting agent, an additive and the like.
  • the organic vehicle solution used in the present invention may include, based on the total amount thereof, 75 wt% or more of an organic solvent, 1 ⁇ 30 wt% of a polymer resin, 5 wt% or less of a wetting agent and a thixotropic agent, and 1 ⁇ 10 wt% of an additive.
  • the organic solvent may have a boiling point of 150 ⁇ 300°C such that it is possible to prevent the aluminum paste from drying and to control the flowability of the aluminum paste.
  • Examples of commonly-used organic solvents may include glycol ethers, such as tripropyleneglycol methyl ether, dipropyleneglycol n-propyl ether, dipropyleneglycol n-butyl ether, tripropyleneglycol n-butyl ether, propyleneglycol phenyl ether, diethyleneglycol ethyl ether, diethyleneglycol n-butyl ether, diethyleneglycol hexyl ether, ethyleneglycol hexyl ether, triethyleneglycol methyl ether, triethyleneglycol ethyl ether, triethyleneglycol n-butyl ether, ethyleneglycol phenyl ether, terpineol, Texanol®, ethyleneglycol,
  • the polymer resin may include polyvinylpyrrolidone, polyvinylalcohol, polyethyleneglycol, ethylcellulose, rosin, a phenol resin, an acrylate resin, and the like.
  • the amount of the polymer may be 1 ⁇ 30 wt%, preferably, 5 ⁇ 25 wt%, based on the total amount of the organic vehicle solution.
  • the amount of the polymer resin is below 1 wt%, the printability and dispersion stability of the aluminum paste are deteriorated. Further, the amount thereof is above 30 wt%, the aluminum paste cannot be printed.
  • thixotropic agent and wetting agent thixotropic agents and wetting agents commonly used in the related field may be used without limitation.
  • the additive may be a dispersant or the like commonly used in the related field.
  • the dispersant commercially available surfactants may be used, and they may be used independently or in combination with each other.
  • the surfactants may include: nonionic surfactants, such as ethers including alkyl polyoxyethylene ether, alkylaryl polyoxyethylene ether, polyoxyethylene-polyoxypropylene copolymer and the like, ester-ethers including polyoxyethylene ether of glycerin ester, polyoxyethylene ether of sorbitan ester, polyoxyethylene ether of sorbitol ester and the like, esters including polyethylene glycol fatty acid ester, glycerin ester, sorbitan ester, propylene glycol ester, sugar ester, alkyl polyglucoside and the like, and nitrogen-containing surfactants including fatty acid alkanolamide, polyoxyethylene fatty acid amide, polyoxyethylene alkylamine, amine oxide and the like; and polymeric surfact
  • Examples of commercially available surfactant products may include hypermer KD (manufactured by Uniqema Corp.), AKM 0531 (manufactured by NOF Corp.), KP (manufactured by Shinetsu Kagaku Kogyo Corp.), POLYFLOW (manufactured by Kyoei Kagaku Corp.), EFTOP (manufactured by Tokemu Products Corp.), Asahi guard, Surflon (manufactured by Asahi Glass Corp.), SOLSPERSE (manufactured by Geneka Corp.), EFKA (manufactured by EFKA Chemicals Co., Ltd.), PB 821 (manufactured by Ajinomoto Co., Inc.), BYK-184, BYK-185, BYK-2160, Anti-Terra U (manufactured by BYK Corp.), and the like.
  • the amount of the dispersant may be 1 ⁇ 10 wt%, preferably, 1 ⁇ 5 wt%, based on the total amount of the organic vehicle solution.
  • the aluminum paste according to the present invention can be easily prepared using a planar mixer which simultaneously rotates and revolves. That is, this aluminum paste can be prepared by putting the above-mentioned components into a planar mixer in the corresponding composition ratio and then stirring and then properly mixing and dispersing the solids in an organic vehicle solution.
  • the aluminum paste prepared in this way has a viscosity of 20,000 ⁇ 200,000 cps at 5 rpm when its viscosity was measured at 25°C using a Brookfield HBDV-III Ultra Rheometer or a spindle CPE-52.
  • the aluminum paste may be prepared such that it has a viscosity of 40,000 ⁇ 100,000 cps.
  • the present invention provides a method of manufacturing a solar cell, including the step of forming a back electrode using the aluminum paste.
  • the solar cell manufactured in this way is advantageous in that it does not easily bows, and the minimum amount of aluminum balls and/or bumps are formed in the electrode layer, so that the values of short circuit current (Isc) and open circuit voltage (Voc) are greatly increased, and the efficiency thereof is remarkably improved.
  • Aluminum paste was prepared in the same manner as in Example 1, except that 65 wt% of aluminum powder having an average particle size distribution of 0.04 ⁇ 5 ⁇ m and 34.5 wt% of an organic vehicle solution were added.
  • Aluminum paste was prepared in the same manner as in Example 1, except that 75 wt% of aluminum powder having an average particle size distribution of 0.04 ⁇ 5 ⁇ m and 24.5 wt% of an organic vehicle solution were added.
  • Aluminum paste was prepared in the same manner as in Example 1, except that the glass frit was replace by glass frit having the composition ratio given in Table 2 below.
  • Aluminum paste was prepared in the same manner as in Example 1, except that 76 wt% of aluminum powder having an average particle size distribution of 0.04 ⁇ 5 ⁇ m and 23.5 wt% of an organic vehicle solution were added.
  • Aluminum paste was prepared in the same manner as in Example 1, except that aluminum powder having an average particle size distribution of 2 ⁇ 10 ⁇ m was used instead of the aluminum powder having an average particle size distribution of 0.04 ⁇ 5 ⁇ m.
  • Aluminum paste was prepared in the same manner as in Example 1, except that aluminum powder having an average particle size distribution of 5 ⁇ 15 ⁇ m was used instead of the aluminum powder having an average particle size distribution of 0.04 ⁇ 5 ⁇ m.
  • Test Example Manufacturing a solar cell and testing characteristics thereof
  • a monocrystalline silicon wafer having a size of 156 X 156 mm and a thickness of 200 ⁇ m was surface-textured such that the height of a pyramid is about 4 ⁇ 6 ⁇ m, and then the N-side of the surface-textured silicon wafer was coated with SiNx.
  • bus bars were printed on the back surface of the silicon wafer using silver paste and then dried, and then aluminum paste of each of Examples 1 to 3 and Comparative Examples 1 to 4 was applied thereon using a screen printing plate of 250 mesh such that the weight of the aluminum paste was 1.5 ⁇ 0.1 g and then dried. Further, finger lines were printed on the front surface of the silicon wafer using silver paste and then dried.
  • the silicon wafer that had undergone the above processes was co-fired in a continuous infrared furnace such that the temperature of a firing zone was 720 ⁇ 900°C, thereby manufacturing a solar cell.
  • the front and back surface of the silicon wafer can be simultaneously co-fired while passing through a belt furnace.
  • the belt furnace includes a burn-out zone of about 600°C and a firing zone of 800 ⁇ 950°C.
  • organic matter was removed from the aluminum paste and the silver paste, and then the aluminum paste and silver paste applied on the back surface and front surface of the silicon wafer were melted to form electrodes.
  • the degree of bowing of the manufactured solar cell was evaluated by matching four edges of the solar cell with the bottom and then measuring to what degree the central portion thereof had been lifted. Further, the occurrence of bumps and aluminum balls around an aluminum back electrode was observed with the naked eye, and the number thereof was counted. The results thereof are given in Table 3 below.
  • the efficiency of the manufactured solar cell was evaluated using an SCM-1000, which is an apparatus for evaluating the performance of solar cells, manufactured by FitTech Corporation. The results thereof are given in Table 4 below.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
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  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)

Abstract

L'invention concerne une pâte d'aluminium pour électrode postérieure de cellule solaire, comprenant, par rapport à la valeur totale : 65 à 75 % en masse de poudre d'aluminium ayant une répartition de la taille moyenne des particules comprise entre 0,01 à 5 µm, 0,01 à 5 % en masse de fritte de verre, et 20 à 34,90 % en masse d'un véhicule organique en solution. La pâte d'aluminium est avantageuse en ce sens que, du fait que le contact entre la pâte d'aluminium et la galette de silicium texturée est amélioré, il est possible d'éviter la flexion de la cellule solaire et de minimiser la formation de billes et/ou d'amas d'aluminium ainsi que d'éviter les décolorations jaunes pendant les processus de cuisson. On peut beaucoup augmenter les valeurs du courant de court-circuit (Isc) et de tension de circuit ouvert (Voc) et remarquablement améliorer l'efficacité de la cellule solaire.
EP10813967.6A 2009-09-04 2010-09-03 Pâte d'aluminium pour électrode postérieure de cellule solaire Withdrawn EP2474040A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20090083460 2009-09-04
KR1020100085604A KR20110025614A (ko) 2009-09-04 2010-09-01 태양전지의 후면 전극용 알루미늄 페이스트
PCT/KR2010/005998 WO2011028058A2 (fr) 2009-09-04 2010-09-03 Pâte d'aluminium pour électrode postérieure de cellule solaire

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KR101276669B1 (ko) * 2011-07-15 2013-06-19 주식회사 케이씨씨 금속-함유 유기계 첨가제를 포함하는 실리콘 태양전지용 후면 전극 조성물
US10170645B2 (en) 2011-11-04 2019-01-01 Heraeus Precious Metals North America Conshohocken Llc Organic vehicle for electroconductive paste
US9899545B2 (en) 2013-03-27 2018-02-20 Cheil Industries, Inc. Composition for forming solar cell electrode and electrode produced from same
RU2531519C1 (ru) * 2013-05-27 2014-10-20 Закрытое акционерное общество "Монокристалл" ЗАО "Монокристалл" Алюминиевая паста для кремниевых солнечных элементов
JP2015115400A (ja) * 2013-12-10 2015-06-22 東洋アルミニウム株式会社 導電性アルミニウムペースト

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EP1739690A1 (fr) * 2004-07-01 2007-01-03 Toyo Aluminium Kabushiki Kaisha Composition de pâte et élément à cellule solaire employant ladite composition
WO2007046199A1 (fr) * 2005-10-18 2007-04-26 Toyo Aluminium Kabushiki Kaisha Composition de pate d’aluminium et dispositif de pile solaire l’utilisant
EP1939943A1 (fr) * 2005-10-20 2008-07-02 Toyo Aluminium Kabushiki Kaisha Composition en pate et element de batterie de piles solaires l' utilisant
US20090120490A1 (en) * 2007-11-14 2009-05-14 Gigastorge Corporation Solar cell

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EP1739690A1 (fr) * 2004-07-01 2007-01-03 Toyo Aluminium Kabushiki Kaisha Composition de pâte et élément à cellule solaire employant ladite composition
WO2007046199A1 (fr) * 2005-10-18 2007-04-26 Toyo Aluminium Kabushiki Kaisha Composition de pate d’aluminium et dispositif de pile solaire l’utilisant
EP1939943A1 (fr) * 2005-10-20 2008-07-02 Toyo Aluminium Kabushiki Kaisha Composition en pate et element de batterie de piles solaires l' utilisant
US20090120490A1 (en) * 2007-11-14 2009-05-14 Gigastorge Corporation Solar cell

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TW201133508A (en) 2011-10-01
EP2474040A4 (fr) 2013-05-22
WO2011028058A2 (fr) 2011-03-10
CN102549760A (zh) 2012-07-04
KR20110025614A (ko) 2011-03-10
WO2011028058A3 (fr) 2011-07-14
JP2013504199A (ja) 2013-02-04

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