WO2013084683A1 - Poudre d'argent pour pâte conductrice d'électricité frittée - Google Patents

Poudre d'argent pour pâte conductrice d'électricité frittée Download PDF

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Publication number
WO2013084683A1
WO2013084683A1 PCT/JP2012/079626 JP2012079626W WO2013084683A1 WO 2013084683 A1 WO2013084683 A1 WO 2013084683A1 JP 2012079626 W JP2012079626 W JP 2012079626W WO 2013084683 A1 WO2013084683 A1 WO 2013084683A1
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WO
WIPO (PCT)
Prior art keywords
silver powder
silver
conductive paste
silicon
sintered
Prior art date
Application number
PCT/JP2012/079626
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English (en)
Japanese (ja)
Inventor
松山　敏和
啓祐 宮之原
Original Assignee
三井金属鉱業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三井金属鉱業株式会社 filed Critical 三井金属鉱業株式会社
Priority to KR1020147008900A priority Critical patent/KR20140060340A/ko
Priority to CN201280048196.0A priority patent/CN103842115B/zh
Publication of WO2013084683A1 publication Critical patent/WO2013084683A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/06—Metallic powder characterised by the shape of the particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0466—Alloys based on noble metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/10—Alloys containing non-metals
    • C22C1/1026—Alloys containing non-metals starting from a solution or a suspension of (a) compound(s) of at least one of the alloy constituents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys

Definitions

  • the present invention relates to a silver powder that can be suitably used for a sintered conductive paste, and particularly to a silver powder that can be suitably used as a sintered conductive paste for a solar cell electrode.
  • the conductive paste is a fluid composition in which a conductive filler is dispersed in a vehicle composed of a resin binder and a solvent, and is widely used for forming an electric circuit, an external electrode of a ceramic capacitor, and the like.
  • This type of conductive paste includes a resin-curing type in which conductive fillers are pressure-bonded by hardening of the resin to ensure conduction, and a sintered type in which organic components are volatilized by high-temperature sintering and the conductive filler is sintered to ensure conduction. There is a type.
  • the sintered conductive paste is generally a paste-like composition in which a conductive filler (metal powder) and glass frit are dispersed in an organic vehicle, and is sintered at 400 to 800 ° C.
  • the organic vehicle is volatilized and the conductive filler is sintered to ensure conduction.
  • the glass frit has a function of adhering the conductive film to the substrate, and the organic vehicle functions as an organic liquid medium for enabling printing of the metal powder and the glass frit.
  • a reducing agent-containing aqueous solution is added to an aqueous reaction system containing silver ions to reduce and precipitate silver particles at 500 ° C.
  • Spherical shape having a heat shrinkage rate of 5 to 15%, a heat shrinkage rate at 600 ° C. of 10 to 20%, an average particle diameter D 50 of 5 ⁇ m or less, a tap density of 2 g / cm 3 or more, and a BET specific surface area of 5 m 2 / g or less.
  • Silver powder is disclosed.
  • a silver powder having a heat shrinkage rate at 410 ° C. of 5 to 15%, preferably 10 to 20% at 500 ° C., specifically an average particle diameter D 50 Discloses silver powder having a particle size of 2 ⁇ m or less.
  • silver powder used in sintered conductive pastes in recent years, silver powder having a fine particle size and sharp particle size distribution is generally required in order to cope with the fine lines of electrodes and circuits. Has been proposed.
  • Patent Document 3 Japanese Patent Laid-Open No. 2005-48237
  • an alkali or complexing agent is added to a silver salt-containing aqueous solution to form a silver complex-containing aqueous solution, and then a polyhydric phenol such as hydroquinone is used as a reducing agent.
  • a polyhydric phenol such as hydroquinone
  • a method for obtaining fine silver powder has been proposed.
  • Patent Document 4 Japanese Patent Laid-Open No. 2010-70793 discloses a silver ammine complex aqueous solution obtained by mixing and reacting an aqueous silver nitrate solution and aqueous ammonia, and in the presence of seed particles and an imine compound, By mixing a silver ammine complex aqueous solution and a reducing agent aqueous solution to reduce and precipitate silver particles, an average particle size of 0.1 ⁇ m or more and less than 1 ⁇ m, a sharp particle size distribution and a highly dispersible spherical silver powder are obtained. A method of obtaining has been proposed.
  • the conductive paste is baked at various temperatures depending on the substrate to be applied and the application to be used.
  • the thermal contraction rate of the conductive filler at the baking temperature that is, the silver powder
  • the substrate (substrate) and silver Problems such as peeling between the film, warping, deformation, and cracking may occur.
  • the thermal shrinkage tends to increase, so the difference in heat shrinkage between the substrate (substrate) and the silver powder increases, and the substrate (substrate) and the silver film peel, warp or deform. , Cracks and the like are more likely to occur.
  • an n-type diffusion layer is generally formed on a silicon substrate (p-type) to form a pn junction, and a back electrode is laminated on the back side of the silicon substrate (p-type) via an oxide film.
  • an antireflection film is laminated on the light-receiving surface side (surface side) of the n-type diffusion layer, and a silver electrode is generally formed by printing and baking a silver paste. In general, an electrode is formed by baking a silver paste at around 500 ° C. in consideration of thermal damage.
  • the present invention is a silver powder that can be suitably used as a conductive filler in a sintered conductive paste, and in particular, a silver powder that can be suitably used as a conductive filler in a sintered conductive paste for solar cell electrodes.
  • a new silver powder that can handle fine lines of electrodes and circuits, has a low heat shrinkage rate at 500 ° C, and can suppress the difference in heat shrinkage between the substrate (substrate) and silver powder. It is to be provided.
  • the present invention proposes a silver powder for sintered conductive paste characterized by containing 30 ppm to 1000 ppm of silicon (Si).
  • the silver powder for sintered conductive paste proposed by the present invention can not only produce fine silver powder but also shrink at 500 ° C. by adding silicon (Si) compound so that silicon is contained at 30 ppm to 1000 ppm.
  • the rate can be 15.0% or less. Therefore, since the difference in heat shrinkage behavior between the substrate (substrate) and the silver powder can be suppressed, it can be suitably used as a conductive filler used in a sintered conductive paste. Especially, since the shrinkage rate at 500 ° C. can be suppressed, it can be particularly suitably used as a conductive filler used in a sintered conductive paste for solar cell electrodes.
  • the use of the silver powder for sintered conductive paste proposed by the present invention is not limited to the use for solar cell electrodes.
  • the silver powder for sintered conductive paste according to the present embodiment (hereinafter referred to as “main silver powder”) is a silver powder containing silicon (Si).
  • main silver powder is a silver powder containing silicon (Si).
  • the silver powder preferably has a silicon (Si) content of 30 ppm to 1000 ppm. If containing silicon in such a range, the BET specific surface area not only can be controlled in the range of 0.8m 2 /g ⁇ 3.0m 2 / g, the shrinkage at 500 ° C. below 15.0% can do. From such a viewpoint, the silicon (Si) content of the present silver powder is more preferably 40 ppm or more and 700 ppm or less, and more preferably 50 ppm or more and 600 ppm or less.
  • Examples of a method for adjusting the silicon (Si) content of the present silver powder include a method for adjusting the type and amount of the silicon compound added in the production process.
  • the silicon (Si) content of the present silver powder is the content of silicon (Si) contained inside the silver powder particles or physically or chemically adsorbed on the surface of the particles. More specifically, this is the amount of silicon (Si) remaining when the silver powder is thoroughly washed until the conductivity of the filtrate obtained by washing with pure water is 40 ⁇ S / cm or less. Since silicon (Si) removed by such washing does not function as a sintering inhibitor and does not contribute to the thermal shrinkage rate of silver powder, it is necessary to exclude it from the silicon (Si) content of the silver powder.
  • the silicon (Si) content of the present silver powder is the silicon (Si) content measured with a measuring device after the silver powder is thoroughly washed until the conductivity of the filtrate obtained by washing with pure water is 40 ⁇ S / cm or less. It is.
  • BET specific surface area of the silver powder is preferably a 0.8m 2 /g ⁇ 3.0m 2 / g. If the BET specific surface area of 0.8m 2 /g ⁇ 3.0m 2 / g of the silver powder, silver powder can be suitably used as the conductive filler of the sintered conductive paste, among others baked for a solar cell electrode It is a fine silver powder that can be suitably used as a conductive filler of a binder-type conductive paste, and can cope with fine lines of electrodes and circuits.
  • the BET specific surface area of the present silver powder is preferably 0.8 m 2 / g or more or 3.0 m 2 / g or less, particularly 1.0 m 2 / g or more or 2.8 m 2 / g or less. More preferably, it is particularly preferably 2.65 m 2 / g or less.
  • the kind and amount of the silicon compound to be added in the production process the concentration and amount of the silver nitrate aqueous solution, the concentration and amount of the reducing agent solution are adjusted.
  • the method of doing can be mentioned.
  • this silver powder does not specifically limit particle shape, it is preferable that it is spherical shape or substantially spherical shape.
  • the conductive paste it is also preferable to use flaky particles obtained by processing the spherical particles or substantially spherical particles, and the spherical or substantially spherical particles and the flaky particles. The mixed product is also preferable.
  • the D50 of the present silver powder that is, the D50 based on the volume-based particle size distribution obtained by measuring by the laser diffraction / scattering particle size distribution measuring method is preferably 0.50 ⁇ m to 1.50 ⁇ m. If the D50 of the present silver powder is 0.50 ⁇ m to 1.50 ⁇ m, it is possible to easily form fine lines when printing the paste. Therefore, from this viewpoint, the D50 of the present silver powder is preferably 0.50 ⁇ m or more or 1.50 ⁇ m or less, more preferably 0.70 ⁇ m or more or 1.20 ⁇ m or less, and more preferably 0.90 ⁇ m or more. It is particularly preferred.
  • the present silver powder has an adhesive property with a silicon substrate used in a solar cell, more specifically, an adhesive property that does not cause peeling of the silicon substrate due to shrinkage of the silver powder that occurs when fired at 500 ° C.
  • the heat shrinkage rate of the present silver powder at 500 ° C. is preferably 15.0% or less, more preferably 4.0% or more or 14.0% or less, and more preferably 12.0%. It is particularly preferred that In the present silver powder, the heat shrinkage rate of the silver powder at 500 ° C. can be adjusted by adjusting the kind and amount of the silicon compound added in the production process.
  • a reducing agent is added to a silver solution such as silver nitrate before or at the same time as a silicon compound is added.
  • a complexing agent to a silver aqueous solution such as silver nitrate
  • a silicon compound to be added
  • a dispersing agent as necessary.
  • the silver particles can be produced by reducing and precipitating silver particles by stirring and then filtering, washing and drying.
  • examples of the silicon compound include silicates such as sodium silicate and potassium silicate, and silicon compounds such as a silane coupling agent.
  • silicates such as sodium silicate and potassium silicate are preferable instead of silicon dioxide (SiO 2 ) from the viewpoint of the effect of atomization and reduction of the heat shrinkage rate.
  • silver solution such as silver nitrate
  • aqueous solution or slurry containing either silver nitrate, a silver salt complex, and a silver intermediate.
  • complexing agents include ammonia water, ammonium salts, chelate compounds and the like.
  • Examples of the reducing agent include ascorbic acid, sulfite, alkanolamine, aqueous hydrogen peroxide, formic acid, ammonium formate, sodium formate, glyoxal, tartaric acid, sodium hypophosphite, metal borohydride, dimethylamine borane, hydrazine, hydrazine
  • Examples thereof include an aqueous solution containing a compound, hydroquinone, pyrogallol, glucose, gallic acid, formalin, anhydrous sodium sulfite, Rongalite and the like.
  • Examples of the dispersant include fatty acids, fatty acid salts, surfactants, organic metals, chelating agents, protective colloids and the like.
  • the silver powder is suitable as a silver powder for a conductive paste, particularly for a sintered conductive paste.
  • the sintered conductive paste can be prepared, for example, by mixing the present silver powder together with glass frit in an organic vehicle.
  • the glass frit include lead-free glass such as lead borosilicate glass and zinc borosilicate.
  • a resin binder arbitrary resin binders can be used, for example. For example, it is desirable to employ a composition containing at least one selected from an epoxy resin, a polyester resin, a silicon resin, a urea resin, an acrylic resin, and a cellulose resin.
  • this silver powder has a thermal shrinkage of 15.0% or less at 500 ° C. and is extremely compatible with a silicon substrate in a solar cell
  • the conductive paste using this silver powder is used for an electrode of a solar cell. Is particularly preferred. However, it is not limited to such a use.
  • BET specific surface area Using a specific surface area measuring device (Monosorb MS-18) manufactured by QUANTACHROME, JIS R 1626: 1996 (Method for measuring specific surface area of fine ceramic powder by gas adsorption BET method), .5) Single point method ", BET specific surface area (SSA) was measured. At that time, a mixed gas of helium as a carrier gas and nitrogen as an adsorbate gas was used.
  • a silver nitrate aqueous solution was obtained by dissolving 50 mL of a silver nitrate aqueous solution having a silver concentration of 400 g / L in 1 L of pure water, adding 60 mL of ammonia water having a concentration of 25% by mass, and stirring. Next, 8 mL of an aqueous gelatin solution having a concentration of 5 g / L is added to an aqueous silver ammine complex solution at 30 ° C. and stirred, and a sodium silicate solution (52-57%) (manufactured by Wako Pure Chemical Industries, Ltd.) is added to the silver.
  • Example 2 Silver powder (sample) was obtained in the same manner as in Example 1 except that the addition amount of the sodium silicate solution was changed to 0.50% by mass with respect to silver.
  • Example 3 Example 1 except that the sodium silicate solution was changed to a potassium silicate solution (27 to 29%) (manufactured by Wako Pure Chemical Industries, Ltd.) and the addition amount was changed to 0.10% by mass with respect to silver. In the same manner, silver powder (sample) was obtained.
  • Example 4 A silver powder (sample) was obtained in the same manner as in Example 3 except that the addition amount of the potassium silicate solution was changed to 0.25% by mass with respect to silver.
  • Example 5 A silver powder (sample) was obtained in the same manner as in Example 3 except that the addition amount of the potassium silicate solution was changed to 0.50% by mass with respect to silver.
  • Example 6 Silver powder (sample) was obtained in the same manner as in Example 3 except that the addition amount of the potassium silicate solution was changed to 0.60% by mass with respect to silver.
  • Example 7 The same as in Example 1 except that the sodium silicate solution was changed to a silane coupling agent (organosilane, KBM-603 manufactured by Shin-Etsu Chemical Co., Ltd.) and the addition amount was changed to 0.25% by mass with respect to silver. Thus, silver powder (sample) was obtained.
  • a silane coupling agent organicsilane, KBM-603 manufactured by Shin-Etsu Chemical Co., Ltd.
  • Example 1 A silver powder (sample) was obtained in the same manner as in Example 1 except that the sodium silicate solution was not added.
  • Example 3 Silver powder (sample) was obtained in the same manner as in Comparative Example 2 except that the addition amount of copper nitrate (II) trihydrate (manufactured by Wako Pure Chemical Industries, Ltd.) was changed to 0.04% by mass with respect to silver. .
  • Example 4 Silver powder (sample) was obtained in the same manner as in Comparative Example 2 except that the addition amount of copper (II) nitrate trihydrate (manufactured by Wako Pure Chemical Industries, Ltd.) was changed to 0.08% by mass with respect to silver. .
  • Example 5 Silver powder (sample) as in Example 1, except that the sodium silicate solution was changed to sodium hydrogen carbonate (manufactured by Wako Pure Chemical Industries, Ltd.) and the addition amount was changed to 0.10% by mass with respect to silver. )
  • the silver powders (samples) obtained in the examples and comparative examples were all spherical. From the examples and test results conducted so far, it was found that the silver powder particles can be atomized when a silicon compound is added to the silver complex salt solution. Although the detailed mechanism has not been elucidated, since the silicon compound becomes the nucleus of silver particle growth and the reduction precipitation reaction proceeds, the particle size can be controlled by controlling the number of nuclei, and the silver powder particles are atomized It can be considered that it can be achieved. In addition, it was found that when silicon is incorporated into or on the surface of silver powder particles, the thermal shrinkage at 500 ° C. is reduced as compared with the case where silicon is not incorporated or copper is incorporated.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Conductive Materials (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

L'invention porte sur une nouvelle poudre d'argent à microparticules qui peut s'accommoder de la formation d'une électrode ou d'un circuit à ligne fine et qui a un faible taux de retrait thermique à 500°C. L'invention a pour objet une poudre d'argent pour une pâte conductrice d'électricité frittée caractérisée en ce qu'elle contient 30 à 1000 ppm de silicium (Si).
PCT/JP2012/079626 2011-12-07 2012-11-15 Poudre d'argent pour pâte conductrice d'électricité frittée WO2013084683A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020147008900A KR20140060340A (ko) 2011-12-07 2012-11-15 소결형 도전성 페이스트용 은분
CN201280048196.0A CN103842115B (zh) 2011-12-07 2012-11-15 烧结型导电性糊剂用银粉

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011268232A JP5922388B2 (ja) 2011-12-07 2011-12-07 焼結型導電性ペースト用銀粉
JP2011-268232 2011-12-07

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WO2013084683A1 true WO2013084683A1 (fr) 2013-06-13

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Application Number Title Priority Date Filing Date
PCT/JP2012/079626 WO2013084683A1 (fr) 2011-12-07 2012-11-15 Poudre d'argent pour pâte conductrice d'électricité frittée

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JP (1) JP5922388B2 (fr)
KR (1) KR20140060340A (fr)
CN (1) CN103842115B (fr)
TW (1) TWI690379B (fr)
WO (1) WO2013084683A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017119913A (ja) * 2015-12-28 2017-07-06 Ｄｏｗａエレクトロニクス株式会社 銀合金粉末およびその製造方法
WO2017115462A1 (fr) * 2015-12-28 2017-07-06 Ｄｏｗａエレクトロニクス株式会社 Poudre d'alliage d'argent et procédé pour la produire
EP3357608A4 (fr) * 2015-10-30 2019-05-01 Dowa Electronics Materials Co., Ltd. Poudre d'argent et son procédé de fabrication
CN114713838A (zh) * 2022-04-25 2022-07-08 金川集团股份有限公司 一种用于ltcc内电极的高振实小粒度类球形银粉的制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105741906A (zh) * 2016-04-19 2016-07-06 江苏时空涂料有限公司 一种太阳能电池背银浆料的制备方法
KR20230153015A (ko) 2022-04-28 2023-11-06 한국광기술원 금속 소결형 접착제 및 그 제조방법

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JPH08143989A (ja) * 1994-11-28 1996-06-04 Matsushita Electric Works Ltd 電気接点材料の製造方法
JP2004079211A (ja) * 2002-08-09 2004-03-11 Dowa Mining Co Ltd 導電ペースト用銀粉及びその製造方法並びにその銀粉を用いた導電ペースト
JP2006302525A (ja) * 2005-04-15 2006-11-02 Kyoto Elex Kk 導電性ペースト組成物
JP2010070793A (ja) * 2008-09-17 2010-04-02 Dowa Electronics Materials Co Ltd 球状銀粉およびその製造方法
JP2010206197A (ja) * 2009-03-05 2010-09-16 Xerox Corp 酸含有組成物を用いた構造部形成プロセス

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JP5144857B2 (ja) * 2010-03-01 2013-02-13 株式会社ノリタケカンパニーリミテド 太陽電池用導電性ペースト組成物

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Publication number Priority date Publication date Assignee Title
JPH08143989A (ja) * 1994-11-28 1996-06-04 Matsushita Electric Works Ltd 電気接点材料の製造方法
JP2004079211A (ja) * 2002-08-09 2004-03-11 Dowa Mining Co Ltd 導電ペースト用銀粉及びその製造方法並びにその銀粉を用いた導電ペースト
JP2006302525A (ja) * 2005-04-15 2006-11-02 Kyoto Elex Kk 導電性ペースト組成物
JP2010070793A (ja) * 2008-09-17 2010-04-02 Dowa Electronics Materials Co Ltd 球状銀粉およびその製造方法
JP2010206197A (ja) * 2009-03-05 2010-09-16 Xerox Corp 酸含有組成物を用いた構造部形成プロセス

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3357608A4 (fr) * 2015-10-30 2019-05-01 Dowa Electronics Materials Co., Ltd. Poudre d'argent et son procédé de fabrication
US10828702B2 (en) 2015-10-30 2020-11-10 Dowa Electronics Materials Co., Ltd. Silver powder and method for producing same
US11407030B2 (en) 2015-10-30 2022-08-09 Dowa Electronics Materials Co., Ltd. Silver powder and method for producing same
JP2017119913A (ja) * 2015-12-28 2017-07-06 Ｄｏｗａエレクトロニクス株式会社 銀合金粉末およびその製造方法
WO2017115462A1 (fr) * 2015-12-28 2017-07-06 Ｄｏｗａエレクトロニクス株式会社 Poudre d'alliage d'argent et procédé pour la produire
CN114713838A (zh) * 2022-04-25 2022-07-08 金川集团股份有限公司 一种用于ltcc内电极的高振实小粒度类球形银粉的制备方法

Also Published As

Publication number Publication date
JP2013119651A (ja) 2013-06-17
TW201330953A (zh) 2013-08-01
JP5922388B2 (ja) 2016-05-24
KR20140060340A (ko) 2014-05-19
CN103842115B (zh) 2016-07-06
TWI690379B (zh) 2020-04-11
CN103842115A (zh) 2014-06-04

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