WO2013084551A1 - コンデンサ素子製造用治具及びコンデンサ素子の製造方法 - Google Patents
コンデンサ素子製造用治具及びコンデンサ素子の製造方法 Download PDFInfo
- Publication number
- WO2013084551A1 WO2013084551A1 PCT/JP2012/072584 JP2012072584W WO2013084551A1 WO 2013084551 A1 WO2013084551 A1 WO 2013084551A1 JP 2012072584 W JP2012072584 W JP 2012072584W WO 2013084551 A1 WO2013084551 A1 WO 2013084551A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- anode body
- electrical connection
- capacitor element
- socket
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 126
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 391
- 238000010438 heat treatment Methods 0.000 claims abstract description 50
- 239000007788 liquid Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims description 69
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 39
- 238000003780 insertion Methods 0.000 claims description 23
- 230000037431 insertion Effects 0.000 claims description 23
- 238000000926 separation method Methods 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 10
- 238000007654 immersion Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 114
- 239000000243 solution Substances 0.000 description 27
- 230000000670 limiting effect Effects 0.000 description 22
- 239000004020 conductor Substances 0.000 description 21
- 238000012545 processing Methods 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 230000002093 peripheral effect Effects 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- 239000004593 Epoxy Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- -1 Ta 2 O 5 Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 230000002411 adverse Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000036961 partial effect Effects 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- BFRGSJVXBIWTCF-UHFFFAOYSA-N niobium monoxide Chemical compound [Nb]=O BFRGSJVXBIWTCF-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- OXHNLMTVIGZXSG-UHFFFAOYSA-N 1-Methylpyrrole Chemical compound CN1C=CC=C1 OXHNLMTVIGZXSG-UHFFFAOYSA-N 0.000 description 1
- YMMGRPLNZPTZBS-UHFFFAOYSA-N 2,3-dihydrothieno[2,3-b][1,4]dioxine Chemical compound O1CCOC2=C1C=CS2 YMMGRPLNZPTZBS-UHFFFAOYSA-N 0.000 description 1
- SLXXDIZSDXAXMI-UHFFFAOYSA-N 2,3-dihydrothieno[2,3-b][1,4]dioxine;ethanol Chemical compound CCO.O1CCOC2=C1C=CS2 SLXXDIZSDXAXMI-UHFFFAOYSA-N 0.000 description 1
- FLDCSPABIQBYKP-UHFFFAOYSA-N 5-chloro-1,2-dimethylbenzimidazole Chemical compound ClC1=CC=C2N(C)C(C)=NC2=C1 FLDCSPABIQBYKP-UHFFFAOYSA-N 0.000 description 1
- JAJIPIAHCFBEPI-UHFFFAOYSA-N 9,10-dioxoanthracene-1-sulfonic acid Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)O JAJIPIAHCFBEPI-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000001741 Ammonium adipate Substances 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 235000019293 ammonium adipate Nutrition 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G13/006—Apparatus or processes for applying terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0036—Formation of the solid electrolyte layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
Definitions
- the present invention relates to a capacitor element manufacturing jig used when manufacturing a capacitor element used for, for example, a solid electrolytic capacitor, and a capacitor element manufacturing method using the capacitor element manufacturing jig.
- Capacitors around CPU (Central Processing Unit) used in personal computers, etc. have high capacity and low ESR (Equivalent Series Resistance) to suppress voltage fluctuations and to suppress heat generation when passing through high ripple. There is a need to be.
- an aluminum solid electrolytic capacitor, a tantalum solid electrolytic capacitor, or the like is used as such a capacitor.
- These solid electrolytic capacitors are composed of one electrode (anode body) made of a sintered body obtained by sintering aluminum foil having fine pores in the surface layer or tantalum powder having minute pores inside, and the surface of the electrode.
- a dielectric layer formed on the dielectric layer and the other electrode (usually a semiconductor layer) formed on the dielectric layer is known.
- one end of a lead wire extended from the anode body is connected to the lower end portion of the support substrate of the anode body, and a plurality of the support substrates are vertically arranged at equal intervals.
- a large number of anode bodies are fixed in an orderly parallel manner in the side direction of the substrate, and the anode bodies are immersed in the chemical conversion liquid, and the anode bodies are placed in the chemical conversion liquid with the anode body side as an anode.
- a dielectric layer is formed on the surface of the anode body by applying a voltage between the negative electrode and the cathode, and then the anode body provided with the dielectric layer on the surface is immersed in a semiconductor layer forming solution.
- a method is known in which a semiconductor layer is further formed on the surface of the dielectric layer on the surface of the anode body (see Patent Document 1).
- the support substrate is likely to be deformed (distorted) in the direction perpendicular to the substrate surface. Become.
- the support substrate is not easily subject to deformation due to gravity when it is set up vertically, but is easily received when it is held horizontally.
- the formation position (particularly the height) of the semiconductor layer formed on the anode body is different for each product. It becomes irregular.
- a capacitor in which the semiconductor layer is formed beyond a predetermined position in the anode body has a high probability of becoming a defective product and greatly reduces the yield.
- a small anode body is required to control the immersion position (height) with higher accuracy.
- the present invention has been made in view of such a technical background, and has a large number of anode bodies that can be processed with one substrate, is excellent in production efficiency, and has an accurate immersion position (height) of the anode body in the processing liquid.
- An object of the present invention is to provide a capacitor element manufacturing jig and a capacitor element manufacturing method that can be well controlled and can perform heat treatment without any trouble when it is necessary to perform heat treatment in the middle of manufacturing the capacitor element. .
- the present invention provides the following means.
- a first substrate having a flat surface on the lower surface; A second substrate disposed in parallel along the planar portion of the lower surface of the first substrate; A plurality of sockets mounted on the lower surface of the second substrate, A first electrical connection terminal is provided on a planar portion of the lower surface of the first substrate, and the first electrical connection terminal is electrically connected to a power source that supplies current to the capacitor anode body, A second electrical connection terminal is provided on the upper surface of the second substrate, and the second electrical connection terminal is electrically connected to the socket; When the second substrate is arranged on the lower surface side of the first substrate so as to be parallel to the plane portion of the lower surface of the first substrate, the first electrical connection terminal comes into contact with the second electrical connection terminal.
- the socket Electrically connected, and by the connection, the socket is electrically connected to the power source,
- the socket has an insertion port for the lead wire for electrically connecting the lead wire of the capacitor anode body having the lead wire, and the insertion port is opened downward from the second substrate.
- a jig for manufacturing a capacitor element
- the said power supply consists of an electric circuit formed in the at least single side
- the lower end of the first electrical connection terminal protrudes downward from the flat surface portion of the lower surface of the first substrate, A through hole is provided in the first substrate, a conductive electrical connection portion is disposed in the through hole, and one end portion of the electrical connection portion is electrically connected to an electrical circuit on the upper surface of the first substrate, The other end of the electrical connection portion is electrically connected to the first electrical connection terminal, A first electrical connection terminal that protrudes from the planar portion of the lower surface of the first substrate when the second substrate is arranged on the lower surface side of the first substrate so as to be parallel to the planar portion of the lower surface of the first substrate. 5.
- the capacitor element manufacturing jig according to any one of the preceding items 2 to 4, wherein a lower end of the capacitor contacts and is electrically connected to a second electrical connection terminal on an upper surface of the second substrate.
- An anode body having a surface provided with a dielectric layer is connected to the socket of the capacitor element manufacturing jig according to any one of items 1 to 8, A state in which the second substrate is arranged on the lower surface side of the first substrate so as to be parallel to the first substrate, and the first electrical connection terminal and the second electrical connection terminal are in contact and electrically connected And The two substrates are held horizontally, and With the anode body immersed in the semiconductor layer forming solution, A semiconductor layer forming step of forming a semiconductor layer on the surface of the dielectric layer by energizing the anode body as an anode; and A separation step of separating the second substrate in a state where the anode body is connected to the socket from the first substrate after the semiconductor layer forming step; A method of manufacturing a capacitor element, comprising: a heat treatment step of performing a heat treatment on the anode body connected to the socket of the second substrate after the separation step.
- the capacitor anode body is connected to the socket of the capacitor element manufacturing jig according to any one of items 1 to 8, and A state in which the second substrate is arranged on the lower surface side of the first substrate so as to be parallel to the first substrate, and the first electrical connection terminal and the second electrical connection terminal are in contact and electrically connected And The two substrates are held horizontally, and In a state where the anode body is immersed in the chemical conversion treatment liquid, A dielectric layer forming step of forming a dielectric layer on a surface of the anode body by energizing the anode body as an anode; and After the dielectric layer forming step, the second substrate in a state where the anode body is connected to the socket is disposed on the lower surface side of the first substrate so as to be parallel to the first substrate, and the first electrical connection is made.
- Electrode terminals are electrically connected to the anode body and the semiconductor layer of the capacitor element obtained by the manufacturing method according to any one of items 9 to 12 above, and a part of the electrode terminals is left and sealed. Capacitor manufacturing method to stop.
- the second substrate has deformation (distortion) such as bending, or even in a state where the second substrate is held in a horizontal state where deformation is likely to occur due to gravity
- the deformation of the second substrate is alleviated.
- the first substrate is configured to have higher rigidity than the second substrate, and further, the second substrate is less deformed (distorted) such as bending.
- the height position of each anode body becomes the same with high accuracy, and thus, for example, the dielectric body in each anode body
- the formation height position of the body layer and the semiconductor layer can be accurately controlled to the same height, and a high-quality capacitor element can be manufactured.
- the insertion ports of the plurality of sockets mounted on the lower surface of the second substrate are opened downward from the second substrate, for example, many sockets are provided in many areas (substantially the entire surface, etc.) on the lower surface of the second substrate. It is possible to mount a single capacitor anode body. Thus, the number of anode bodies that can be processed with one circuit board is large, and the productivity is excellent.
- the second substrate having the anode body connected to the socket is separated from the first substrate, and the second substrate having the anode body connected to the socket is heat treated. (That is, application of heat treatment to the first substrate can be avoided), the heat treatment can be performed smoothly without adversely affecting the flatness of the planar portion of the lower surface of the first substrate. If further processing is required after the heat treatment, the second substrate is placed on the lower surface side of the first substrate in parallel with the first substrate after the heat treatment, and the first electrical connection on the lower surface of the first substrate is performed.
- the terminal may be processed by being electrically connected and in contact with the second electrical connection terminal on the upper surface of the second substrate.
- a capacitor element manufacturing system can be configured to save space, and the electronic components in the electric circuit constituting the power source do not need to be subjected to heat treatment. . Further, since each of the first electric connection terminals is electrically connected to an individual power source, it is possible to control the current supplied individually to each capacitor anode body.
- the first electrical connection projecting from the plane portion of the lower surface of the first substrate is simply arranged by superimposing the second substrate on the lower surface side of the first substrate in parallel with the first substrate. Since the lower end of the terminal can contact and be electrically connected to the second electrical connection terminal on the upper surface of the second substrate, the socket on the lower surface of the second substrate can be easily electrically connected to the electric circuit on the first substrate. Can be connected to.
- the conductive electrical connection portion is a spring terminal
- the first electrical connection terminal is formed when the second substrate is disposed on the lower surface side of the first substrate so as to overlap the first substrate. Can be stably and reliably brought into contact with the second electrical connection terminal.
- the thickness of the first substrate is larger than the thickness of the second substrate, the first substrate is not easily deformed, and therefore the second substrate having a small thickness is the lower surface of the first substrate. Since deformation such as bending of the second substrate is easily mitigated in a state where the second substrate is placed in parallel with the first substrate on the side, the anode body connected to the socket of the second substrate is processed. When immersed in the liquid, the height position of each anode body becomes the same with high accuracy, and thereby, for example, the formation height position of a dielectric layer or a semiconductor layer in each anode body can be accurately controlled to the same height. And a high quality capacitor element can be manufactured.
- the second substrate in which the anode body is connected to the socket is separated from the first substrate, and after this separation, the second substrate is connected to the socket of the second substrate.
- Heat treatment can be performed on the anode body in the state.
- the second substrate in which the anode body is connected to the socket is separated from the first substrate, and after this separation, the second substrate is connected to the socket of the second substrate.
- the anode body can be heat-treated.
- the second substrate in which the anode body is connected to the socket is provided between the dielectric layer forming step and the semiconductor layer forming step and / or after the semiconductor layer forming step. After the separation from the substrate, the anode body in a state connected to the socket of the second substrate can be subjected to heat treatment.
- a high-quality capacitor can be manufactured with excellent productivity without adversely affecting the capacitor element manufacturing jig (for example, formation of a dielectric layer or a semiconductor layer in the anode body). High-quality capacitors whose position is accurately controlled to a predetermined height can be manufactured).
- FIG. 3 is an enlarged sectional view taken along line XX in FIG. 2. It is a top view which shows the 2nd board
- FIGS. It is a partial expanded sectional view which shows the state which piled up the 2nd board
- FIGS. It is a schematic front view which shows the manufacturing method of the capacitor
- FIG. 1 It is a schematic diagram which shows the manufacturing method of the capacitor
- FIG. 1 It is a figure which shows the other example of the method of overlapping and fixing a 2nd board
- (A) is a bottom view of the corner part of a 1st board
- (B) is a figure of a 2nd board
- (C) is a partial side view showing a fixing method
- (D) is a partial side view showing a state in which both substrates are fixed to each other.
- the capacitor element manufacturing jig 10 includes a first substrate 11, a second substrate 12, and a plurality of sockets 1.
- the plurality of sockets 1 are mounted on the lower surface of the second substrate 12.
- the socket 1 has a conductive socket main body 2 having a lead wire insertion port 37 provided on the lower surface (see FIG. 8).
- the socket body 2 is a member that plays a role as an electrical connection terminal that is electrically connected to the anode body (conductor) 52 and the like, and is made of a conductive material such as a metal material in order to obtain electrical continuity. .
- the socket main body 2 includes a cylindrical portion 21 and an inclined surface portion 22 that extends outward from the peripheral edge of the bottom surface of the cylindrical portion 21 downward (see FIG. 8). ),
- the cylindrical portion 21 and the inclined surface portion 22 are made of a conductive material such as a metal material.
- a lead wire insertion port 37 is formed by being surrounded by the inclined surface portion 22 (see FIG. 8).
- a hollow portion 23 having an opening on the bottom surface is provided inside the cylindrical portion 21. The hollow portion 23 communicates with the space of the lead wire insertion port 37.
- a metal spring member 24 is connected to the inner peripheral surface of the hollow portion 23, and a lead wire insertion hole 38 is formed by being surrounded by the metal spring member 24.
- the lead wire insertion hole 38 communicates with the space of the lead wire insertion port 37.
- the socket body 2 and the anode body (conductor) 52 are electrically connected. Connected.
- An electrical circuit 30 having a pair of electrical terminals 14 and 15 is formed on the first substrate 11 as shown in FIGS.
- the pair of electrical terminals 14 and 15 are electrically connected to a power supply source (hereinafter referred to as “power source 32”) (see FIG. 11).
- power source 32 a power supply source
- the electric circuit 30 has a circuit for limiting current (for example, the circuits of FIGS. 11 and 12), and each anode body (conductor) 52 via the socket 1 and the lead wire 53 connected thereto. Independently supply current. That is, the electric circuit 30 limits the current for each of the socket body portions 2.
- the maximum current value flowing through each anode body (conductor) 52 is the current limit value of the electric circuit.
- the circuit for limiting the current is preferably a constant current circuit (for example, FIG. 11) in order to minimize the deviation of the obtained capacitor.
- the electric circuit 30 is a circuit for limiting the voltage for each individual socket body 2. That is, the electric circuit 30 is more preferably a circuit that limits the voltage applied to each anode body (conductor) 52. In this case, even when a relatively large current is passed, the maximum voltage value applied to the anode body 52 is limited, so that the processing time for chemical formation and semiconductor layer formation can be shortened.
- the pair of electrical terminals 14 and 15 are provided at one end of the circuit board 11 in the width direction (see FIGS. 1 to 3).
- One electric terminal is a current limit terminal 14, and a current limit value is set by a voltage applied to the terminal 14.
- a current limit value is set by a voltage applied to the terminal 14.
- it can be set by the potential difference between the current limiting terminal 14 and the voltage limiting terminal 15 described later, and in the case of the circuit of FIG. 12, it can be set by the potential difference between the current limiting terminal 14 and the cathode plate 51.
- the other electrical terminal is a voltage limiting terminal 15, and the maximum voltage value applied to each anode body (conductor) 52 is limited by the voltage applied to the terminal 15.
- the maximum voltage value applied to each anode body (conductor) 52 is limited by the voltage applied to the terminal 15.
- it can be set by the potential difference between the voltage limiting terminal 15 and the cathode plate 51.
- the transistor 19 and the resistor 18 are mounted (attached) on the upper surface of the first substrate 11, and the emitter E of the transistor 19 is electrically connected to one end of the resistor 18.
- the other end of the resistor 18 is electrically connected to the current limiting terminal 14, the base B of the transistor 19 is electrically connected to the voltage limiting terminal 15, and the collector C of the transistor 19 is electrically conductive.
- the first electrical connection terminal 41 is electrically connected to one end (upper end) of the electrical connection 44 and the other end (lower end) of the electrical connection 44.
- the electrical connection portion 44 is disposed in the first through hole 43 of the first substrate 11 (see FIG. 4).
- at least an upper end portion of the first electrical connection terminal 41 is disposed in the first through hole 43 (see FIG. 4).
- reference numeral 20 denotes solder. The solder 20 electrically connects one end portion (upper end portion) of the electric connection portion 44 and the electric circuit 30 (collector C of the transistor 19).
- the lower end of the first electrical connection terminal 41 protrudes downward from the flat portion 11a on the lower surface of the first substrate 11 (see FIG. 4).
- the first electrical connection terminal 41 can be expanded and contracted because the conductive electrical connection portion 44 is extendable.
- the protrusion length L of the lower end of the first electrical connection terminal 41 in a state where the first electrical connection terminal 41 is not expanded or contracted is the second electrical connection terminal that the lower end will be described later when the second substrate 12 is placed on the lower surface of the first substrate 11 in parallel. It is sufficient that the length reaches 42, and it is usually preferable to set the length to 1 mm to 10 mm (see FIG. 4).
- the first electrical connection terminal 41 is provided on the lower surface of the first substrate 11, and the first electrical connection terminal 41 is electrically connected to the electrical circuit 30 of the first substrate 11. Yes.
- the conductive electrical connecting portion 44 is composed of a metal spring member such as a metal spring (see FIG. 4).
- a part of the upper portion of the socket body 2 of the socket 1 is inserted and disposed in each of the plurality of third through holes 49 formed in the second substrate 12.
- a filler 39 such as an adhesive into the gap between the three through holes 49
- a part of the upper side of the socket body 2 is fixed in the third through holes 49 of the second substrate 12. (See FIG. 8). That is, the socket 1 is attached and fixed to the second substrate 12 (see FIG. 6).
- the lower side of the socket body 2 of the socket 1 protrudes downward from the lower surface of the second substrate 12 (see FIG. 8).
- the plurality of sockets 1 are mounted on the lower surface of the second substrate 12 (see FIGS. 6 and 8).
- the upper surface of the socket body 2 is a second electrical connection terminal 42 (see FIGS. 5 and 8).
- the second electrical connection terminal 42 is formed of a metal thin film such as a metal whose main component is at least one of copper, iron, nickel, and aluminum.
- the upper surface of the socket body 2 (the upper surface of the second electrical connection terminal 42) and the upper surface of the second substrate 12 are flush with each other (see FIG. 8).
- the position of the upper surface of the second electrical connection terminal 42 may slightly protrude (for example, 0.1 mm to 0.5 mm) above the upper surface of the second substrate 12. It may be slightly depressed (for example, 0.1 mm to 0.5 mm) below the upper surface (may be recessed).
- the lead wire insertion ports 37 of the plurality of sockets 1 mounted on the second substrate 12 are opened downward on the lower surface side of the second substrate 12.
- the lead wire 53 of the capacitor anode body 52 having the lead wire 53 is electrically connected to the insertion port 37 on the bottom surface of the socket 1, the lead wire 53 is inserted in the bottom surface of the second substrate 12. (See FIGS. 9 and 10).
- a large number (for example, 64) of the socket 1 is provided at substantially equal intervals (including equal intervals) along the length direction of the second substrate 12, and the socket 1 extends in a row.
- the socket 1 is provided in a plurality of rows (for example, 8 rows, 9 rows, 10 rows, 11 rows, etc.) at substantially equal intervals (including equal intervals) along the width direction of the second substrate 12 (see FIG. 6).
- the arrangement mode of the socket 1 is not particularly limited to the arrangement mode shown in FIG. 6, and other two-dimensional arrangement modes can also be adopted. For example, a tetragonal lattice-like arrangement mode, a hexagonal lattice-like arrangement mode, and the like can be given. Further, although depending on the size of the second substrate 12, 200 or more, preferably 400 to 30000, of the sockets per second substrate 12 as a range that is easy to handle. 1 can be provided.
- the electric circuit 30 in the capacitor element manufacturing jig 10 is not particularly limited to the one having the configuration shown in FIG. 11, and may have a circuit configuration as shown in FIG. In FIG. 12, 31 is a diode.
- a plurality of magnets 61 are fixed to the periphery of the upper surface of the first substrate 11. That is, the magnets 61 are fixed to a total of six locations of the four corners on the upper surface of the first substrate 11 and a middle portion in the length direction of a pair of edges extending in the length direction (FIGS. 1 and 2). reference). These magnets 61 are fixed in such a manner that at least a part thereof is embedded in a recess for embedding formed on the upper surface of the first substrate 11 (see FIG. 9).
- a magnet 63 is fixed to the central portion (region excluding the edge portion) of the upper surface of the first substrate 11. That is, the magnet 63 is fixed to a position on the one end side from the middle in the length direction in the central region of the upper surface of the first substrate 11, and the other end side from the middle in the length direction in the central region on the upper surface of the first substrate 11.
- the magnet 63 is fixed at the position (see FIG. 3).
- These magnets 63 are fixed in such a manner that at least a part thereof is embedded in a recess for embedding formed on the upper surface of the first substrate 11 (see FIG. 9).
- positioning projections 62 project downward from the peripheral edge of the lower surface of the first substrate 11.
- positioning protrusions 62 are projected downward at four corners on the lower surface of the first substrate 11 (see FIGS. 3 and 9).
- a plurality of magnets 64 are fixed to the peripheral edge of the upper surface of the second substrate 12. That is, the magnets 64 are fixed to a total of six locations of four corners on the upper surface of the second substrate 12 and a middle portion in the length direction of a pair of edges extending in the length direction (FIGS. 1 and 5). reference).
- a positioning hole 65 is formed in the center of the upper surface of the magnet 64 fixed to the four corners of the second substrate 12 (see FIG. 5).
- the positioning hole 65 is formed to have a size that can receive the positioning protrusion 62 in an adapted state.
- a magnet 66 is fixed to the central portion (region excluding the edge portion) of the upper surface of the second substrate 12. That is, the magnet 66 is fixed to a position on the one end side from the middle in the length direction in the central region of the upper surface of the second substrate 12, and the other end side from the middle in the length direction in the central region on the upper surface of the second substrate 12
- the magnet 66 is fixed at the position (see FIGS. 1 and 5). In this manner, by providing a portion to be fixed other than the edge of the second substrate 12 and shortening the interval between the fixed portions, the bending (distortion) of the second substrate 12 can be more easily eliminated. . Therefore, the second substrate 12 can be made larger. Note that if the interval between the fixing parts is too short, the number of fixing parts increases, which increases costs.
- the interval between the fixed portions may be determined in accordance with the material of the second substrate 12 and the degree of allowable distortion.
- the second substrate 12 when the second substrate 12 is placed on the lower surface side of the first substrate 11 in parallel with the flat surface portion 11a of the lower surface of the first substrate and the peripheral edges thereof are aligned,
- the magnet 61 at the peripheral edge of the first substrate 11 and the magnet 64 at the peripheral edge of the second substrate 12 are in a vertically corresponding position and attract each other by magnetic force, and the magnet 63 at the center of the first substrate 11
- the magnets 66 at the center of the two substrates 12 are in the vertical correspondence positions and are attracted by magnetic force, so that the second substrate 12 is placed on the lower surface side of the first substrate 11 and fixed to each other.
- the positioning protrusions 62 at the corners of the lower surface of the first substrate 11 are received in the positioning holes 65 of the magnets 64 at the corners of the second substrate 12, thereby the first substrate 11 and the first substrate 11. Positioning of overlapping with two substrates 12 (See FIGS. 1 and 9).
- the first substrate 11 has high rigidity.
- an insulating plate made of a material (imide resin, glass epoxy resin, etc.) that is usually used for a circuit board is used for the first substrate 11, the thickness T of the first substrate 11 is ensured from the viewpoint of ensuring sufficient rigidity. Is preferably set to 5 mm or more, and is particularly preferably set to 7 mm to 30 mm for ease of handling.
- Examples of means for sufficiently securing the rigidity of the first substrate 11 include a method of using a laminated substrate in which substrates of metal material or ceramic material are laminated in addition to the setting of the thickness (5 mm or more).
- the first substrate 11 may be composed of a single plate or a laminated plate in which a plurality of plates are laminated.
- a laminated plate as the first substrate 11 for example, it may be a laminated plate in which the adjacent plates are simply overlapped without being bonded to each other, or a laminated plate in which the adjacent plates are bonded to each other. If it is a board, it is more preferable.
- the material of the insulating substrate is not particularly limited, and examples thereof include glass epoxy resin, imide resin, and ceramics. Alternatively, even a laminated substrate using a metal material for the intermediate layer can be used in the same manner as the insulating substrate as long as the inner surface of the through hole (inner peripheral surface of the hole) is insulated.
- the thickness S of the second substrate 12 is set smaller than the thickness T of the first substrate 11. It is preferable. Accordingly, the distortion of the second substrate 12 is easily corrected by the first substrate 11.
- the thickness S of the second substrate 12 is preferably set to 0.5 mm to 2 mm.
- a laminated plate in a state where adjacent plates are simply overlapped without adhering to each other may be used, or a laminated plate in which adjacent plates are bonded together. It may be a plate.
- FIG. 9 is a schematic view showing an example of a method for manufacturing a capacitor element.
- FIG. 11 is a schematic diagram showing the method of manufacturing the capacitor element in terms of an electric circuit.
- the processing container 50 in which the processing liquid 59 is charged is prepared.
- the treatment liquid 59 include a chemical conversion treatment liquid for forming the dielectric layer 54 and a semiconductor layer forming solution for forming the semiconductor layer 55.
- the second substrate 12 is placed on the lower surface side of the first substrate 11 so as to be parallel to the flat surface portion 11a of the lower surface of the first substrate and arranged so that the peripheral edges thereof coincide with each other,
- the magnet 61 at the peripheral edge of the substrate 11 and the magnet 64 at the peripheral edge of the second substrate 12 are in a vertically corresponding position and attract each other by magnetic force, and the magnet 63 at the center of the first substrate 11 and the second substrate Since the magnets 66 in the central portion of the twelve portions are in the vertical correspondence positions and attract each other by magnetic force, the second substrate 12 is parallel to the lower surface side of the first substrate 11 with respect to the flat surface portion 11a of the lower surface of the first substrate 11.
- the two substrates 11 and 12 are fixed to each other (see FIG. 9).
- the positioning protrusions 62 at the corners of the lower surface of the first substrate 11 are received in the positioning holes 65 of the magnets 64 at the corners of the second substrate 12 of the second substrate 12.
- 11 and the second substrate 12 are positioned (see FIG. 9).
- the word (sentence) of “the second substrate is placed on the lower surface side of the first substrate so as to be parallel to the plane portion of the lower surface of the first substrate” is a magnet as described above.
- a configuration in which a part of the first substrate and a part of the second substrate are in contact with each other via 64 and 66 and the substrates are overlapped in parallel that is, the first substrate 11 and the second substrate 12 in a partial region). It is used to mean including a structure having a space such as a gap between the two.
- the gap is preferably smaller, and is usually 5 mm or less, preferably 2 mm or less.
- the second substrate 12 is arranged on the lower surface side of the first substrate 11 so as to be overlapped in parallel with the planar portion 11a of the lower surface of the first substrate 11, and the first electrical connection terminal 41 and the first substrate (2)
- the two substrates 11, 12 that are in contact with the electrical connection terminal 42 and are electrically connected to each other are held horizontally by a mechanical transfer device (not shown) (see FIG. 9). .
- an anode body (conductor) 52 having a lead wire 53 is connected to each of the sockets 1 mounted on the lower surface of the second substrate 12 of the capacitor element manufacturing jig 10. That is, the lead wire 53 of the anode body 52 is inserted into the lead wire insertion port 37 on the bottom surface of the socket 1 mounted on the lower surface of the second substrate 12 of the capacitor element manufacturing jig 10, and the lead wire 53 is The anode body (conductor) 52 is electrically connected to the socket 1 by being inserted into the lead wire insertion hole 38 through the lead wire insertion port 37 (see FIG. 10). Since the leading end side of the lead wire 53 is in contact with the metal spring member 24 in the cavity 23 of the socket main body 2, the socket 1 and the anode body (conductor) 52 are electrically connected.
- the capacitor element manufacturing jig 10 on which the anode body (conductor) 52 is set is horizontally disposed above the processing container 50, and the manufacturing jig 10 is in a horizontal state (second substrate 12).
- the jig 10 is lowered to a state in which at least a part (usually all) of the anode body (conductor) 52 is immersed in the processing liquid 59 while the lower surface of the jig is held in a horizontal state.
- the jig 10 is fixed at the position (see FIG. 9).
- the anode body 52 In the immersion state of the anode body (conductor) 52, the anode body 52 is used as an anode, and the cathode plate 51 disposed in the treatment liquid 59 is used as a cathode (see FIGS. 9 and 11).
- a chemical conversion treatment liquid is used as the first treatment liquid 59, a dielectric layer 54 (see FIG. 13) can be formed on the surface of the conductor 52 by the energization (dielectric layer forming step).
- the anode body 52 provided with the dielectric layer 54 on the surface is washed with water and dried, and then a semiconductor layer forming solution 59 is newly introduced into a processing container 50 different from the above, Similarly, the jig 10 is kept in a horizontal state (the lower surface of the second substrate 12 is horizontal) until at least a part (usually all) of the anode body 52 is immersed in the semiconductor layer forming solution 59. Then, the jig 10 is fixed at the height position while being lowered, the anode body 52 is used as an anode, and the cathode plate 51 disposed in the semiconductor layer forming solution 59 is used as a cathode.
- the semiconductor layer 55 can be formed on the surface of the dielectric layer 54 on the surface of the anode body 52 (semiconductor layer forming step), and thus the surface of the anode body 52 A dielectric layer 54 is laminated on Further the semiconductor layer 55 on the surface of the dielectric layer 54 can be produced capacitor element 56 formed by stacking (see FIG. 13).
- the anode body 52 is connected to the socket 1 between the dielectric layer forming step and the semiconductor layer forming step and / or after the semiconductor layer forming step.
- the second substrate 12 in such a state is separated from the first substrate 11 (separation step), and the separated second substrate 12 with the anode body 52 is subjected to heat treatment (heat treatment step). Separation of the first substrate 11 and the second substrate 12 can be performed by separating the first substrate 11 and the second substrate 12 against the attracting force of the magnets, so that the separation operation between the substrates is easy.
- the heat treatment is performed mainly for the purpose of increasing the reliability of the capacitor, but the heat treatment timing varies depending on the application.
- the heating temperature of the heat treatment performed between the dielectric layer forming step and the semiconductor layer forming step is usually 200 ° C. to 500 ° C.
- the heating temperature of the heat treatment performed between the semiconductor layer forming step and the carbon paste forming step is usually 150 ° C.
- the heating temperature of the heat treatment performed between the carbon paste forming step and the silver paste forming step is usually 150 ° C. to 300 ° C.
- the atmosphere during the heat treatment is preferably an inert gas atmosphere such as argon gas or a reduced pressure atmosphere. Nitrogen reacts with an anode body material such as niobium even at a temperature of about 300 ° C. Therefore, in this case, nitrogen is not used as an inert gas.
- the first substrate 11 and the second substrate 12 are fixed to each other again after the heat treatment, and the same as described above. It only has to be electrically connected to.
- the size of the socket 1 is not particularly limited, but may be a size according to the arrangement of the capacitor elements when immersed in the treatment liquid 59.
- the anode body 52 is not particularly limited, and examples thereof include at least one anode body selected from the group consisting of a valve metal and a conductive oxide of the valve metal. Specific examples thereof include aluminum, tantalum, niobium, titanium, zirconium, niobium monoxide, zirconium monoxide and the like.
- the shape of the anode body 52 is not particularly limited, and examples thereof include a foil shape, a plate shape, a rod shape, and a rectangular parallelepiped shape.
- the chemical conversion treatment liquid 59 is not particularly limited.
- an organic acid or a salt thereof for example, adipic acid, acetic acid, ammonium adipate, benzoic acid, etc.
- an inorganic acid or a salt thereof for example, phosphoric acid
- examples thereof include a solution in which a conventionally known electrolyte such as silicic acid, ammonium phosphate, ammonium silicate, sulfuric acid, ammonium sulfate or the like is dissolved or suspended.
- the surface of the anode body 52 contains an insulating metal oxide such as Ta 2 O 5 , Al 2 O 3 , Zr 2 O 3 , Nb 2 O 5 or the like.
- a dielectric layer 54 can be formed.
- the dielectric layer forming step using such a chemical conversion treatment solution may be omitted, and the anode body 52 having the dielectric layer 54 already provided on the surface may be used for the semiconductor layer forming step.
- Examples of such a surface dielectric layer 54 include a dielectric layer mainly composed of at least one selected from insulating oxides, and a conventionally known dielectric layer in the field of ceramic capacitors and film capacitors.
- the semiconductor layer forming solution 59 is not particularly limited as long as it can form a semiconductor by energization.
- examples thereof include solutions containing oxythiophene and the like.
- a dopant may be further added to the semiconductor layer forming solution 59.
- well-known dopants such as aryl sulfonic acid or its salt, alkyl sulfonic acid or its salt, various polymeric sulfonic acid or its salt, etc. are mentioned.
- a conductive polymer for example, polyaniline, polythiophene, polypyrrole, polymethylpyrrole, or the like
- the semiconductor layer 55 can be formed.
- the second substrate 12 is overlapped on the lower surface side of the first substrate 11 in parallel with the first substrate 11 to fix the substrates 11 and 12 to each other (the first electrical connection terminal 41 and Magnets 61, 63, 64, 66 are used as means for fixing the two substrates 11, 12 to each other in a state where the second electrical connection terminal 42 is in contact and the terminals 41, 42 are electrically connected to each other.
- the mutual fixing method is not particularly limited to such a method. Instead of these, for example, a mutual fixing method as shown in FIG. 14 may be adopted.
- a fixing protrusion 71 protrudes from the lower surface of the first substrate 11.
- the fixing protrusion 71 includes a shaft portion 72 projecting downward from the lower surface of the first substrate 11 and a disk-shaped portion 73 fixed to the lower end of the shaft portion (see FIG. 14C). ).
- the plan view shape of the disk-shaped portion 73 is circular (see FIG. 14A).
- a fixing hole 74 is formed on the lower surface of the second substrate 12 (see FIG. 14B).
- the fixing hole 74 includes a protrusion insertion hole 76 and a slide movement hole 75 communicating with the protrusion insertion hole 76.
- the protrusion insertion hole 76 is formed in a circular shape in plan view, and is sized to receive the disk-shaped portion 73 of the fixing protrusion 71.
- the slide movement hole 75 is formed to have a size that can receive the shaft portion 72 of the fixing projection 71 and is set to be smaller than the disk-shaped portion 73.
- the second substrate 12 is disposed on the lower surface side of the first substrate 11 in parallel with the first substrate 11, and the plate-like portion 73 of the fixing protrusion 71 of the first substrate 11 is formed.
- the shaft portion 72 of the fixing protrusion 71 is further inserted into the slide movement hole 75 of the second substrate 12 ( By sliding and moving (to the right in the drawing), the second substrate 12 is superimposed on the lower surface side of the first substrate 11 in parallel with the flat surface portion 11a of the lower surface of the first substrate 11, 12. Can be fixed to each other (see FIG. 14D).
- an electrode layer is formed on the semiconductor layer 55 of the capacitor element 56 obtained by the above manufacturing method in order to improve electrical contact with an electrode terminal (for example, a lead frame) for external extraction of the capacitor. It may be provided.
- the electrode layer can be formed by, for example, solidifying a conductive paste, plating, metal deposition, or forming a heat-resistant conductive resin film.
- a conductive paste As the conductive paste, silver paste, copper paste, aluminum paste, carbon paste, nickel paste and the like are preferable.
- Electrode terminals are electrically connected to the anode body 52 and the semiconductor layer 55 of the capacitor element 56 thus obtained (for example, the lead wire 53 is welded to one electrode terminal, and the electrode layer (semiconductor layer) 55 is connected. Is adhered to the other electrode terminal with a silver paste or the like), and the capacitor is obtained by sealing with leaving a part of the electrode terminal.
- the sealing method is not particularly limited, and examples thereof include a resin mold exterior, a resin case exterior, a metal case exterior, a resin dipping exterior, and a laminate film exterior.
- a resin mold exterior is preferable because it can be easily reduced in size and cost.
- the first circuit board 11 is formed with the electric circuit 30 shown in FIGS. That is, the current limiting terminal 14 and the voltage limiting terminal 15 are provided in the middle of one edge of the pair of edges extending in the length direction of the upper surface of the first substrate 11 ( 2 and 3).
- each transistor 19 was mounted on the first substrate 11 with the configuration shown in FIGS. 2 to 4, 7, and 11 described in detail in the previous section.
- the collector C of each transistor 19 is an output.
- the lower end of the first electrical connection terminal 41 protrudes downward by 1 mm from the flat surface portion 11a of the lower surface of the first substrate 11 (projection length L is 1 mm; see FIG. 4).
- a metal spring product number: MS-038 spring pin
- a chip resistor of 1 K ⁇ (within ⁇ 0.5% error) was used as the resistor 18, and “Transistor 2SA2154” manufactured by Toshiba was used as the transistor 19.
- the second substrate 12 is made of a glass epoxy substrate having a length of 180 mm, a width of 96 mm, and a thickness of 1.6 mm.
- a third through hole 49 is formed in the second substrate 12 (see FIGS. 5 and 8). 64 pieces of the third through holes 49 are provided at a pitch of 2.54 mm along the length direction of the second substrate 12, and these 64 third through holes 49 extending in a row are formed on the second substrate 12.
- a total of 10 columns are provided at a pitch of 8 mm along the width direction (see FIG. 5, FIG. 5 shows only 9 columns for reasons of drawing).
- a part of the socket 1 is inserted and fixed in each of the 640 third through holes 49 provided in the second substrate 12.
- a second electrical connection terminal 42 made of a metal thin film plated with gold is provided on the top surface of each socket 1 (see FIGS. 5 and 8).
- the plurality of sockets 1 are mounted on the lower surface of the second substrate 12 (see FIGS. 6 and 8).
- the first substrate 11, the electronic component mounted on the first substrate 11, the second substrate 12, and the plurality of sockets 1 mounted on the lower surface of the second substrate 12 were provided.
- a jig 10 for producing a solid electrolytic capacitor element was obtained (see FIGS. 1 to 8).
- the second substrate 12 is arranged on the lower surface side of the first substrate 11 so as to be overlapped in parallel with the planar portion 11a of the lower surface of the first substrate 11, and the first electrical connection terminal 41 and the first substrate (2)
- the two substrates 11, 12 that are in contact with the electrical connection terminal 42 and are electrically connected to each other are held horizontally by a mechanical transfer device (not shown) (see FIG. 9). .
- an anode body (conductor) 52 having a lead wire 53 is connected to each of the plurality of sockets 1 mounted on the lower surface of the second substrate 12 of the capacitor element manufacturing jig 10.
- the insertion direction of the lead wire 53 into the socket 1 is perpendicular to the second substrate 12 (see FIG. 10).
- the capacitor element manufacturing jig 10 in which the anode body (conductor) 52 is set is positioned above a processing vessel 50 made of metal (stainless steel) containing a 2 mass% phosphoric acid aqueous solution (processing solution) 59 therein. And placed horizontally.
- the metal processing vessel 50 also serves as the cathode plate 51.
- the jig 10 is lowered while maintaining the horizontal state so that the whole of the anode body 52 and the lower end 5 mm of the lead wire 53 are immersed in the processing liquid 59. It fixed in the position (refer FIG. 9).
- a voltage is applied between the voltage limiting terminal 15 and the cathode plate (including the metal processing vessel 50) 51 so that the voltage limiting value (chemical conversion voltage) is 8.3 V, and each anode body
- the current was applied by applying a voltage between the current limiting terminal 14 and the voltage limiting terminal 15 so that the current limiting value of the current was 2.1 mA.
- the pores and the outer surface of the conductive sintered body 52 and the surface of a part of the lead wire (for 5 mm) are formed.
- a dielectric layer 54 was formed.
- the current limit value was continuously decreased at a rate of 0.5 mA per hour for the latter 4 hours from 4 hours to 8 hours (dielectric layer forming step).
- the anode body 52 having the dielectric layer 54 on the surface is washed with water and dried, and then immersed in a 20% by mass ethylenedioxythiophene ethanol solution, while the semiconductor is contained in a processing container 50 different from the processing container 50.
- the layer forming solution 59 (a solution in which 0.4% by mass of ethylenedioxythiophene and 0.6% by mass of anthraquinone sulfonic acid are contained in a mixed solvent composed of 70 parts by mass of water and 30 parts by mass of ethylene glycol).
- the jig 10 is lowered while maintaining the horizontal state so that the entire anode body 52 having the dielectric layer 54 on the surface and the lower end 5 mm of the lead wire 53 are immersed in the semiconductor layer forming solution 59. At least it was fixed at that height. In this immersed state, electrolytic polymerization was carried out at 20 ° C. with a constant current of 5 ⁇ A per anode body for 50 minutes. Thereafter, the anode body 52 provided with the dielectric layer 54 on the surface thereof was pulled up from the solution 59, washed with water, washed with alcohol, and dried.
- Dielectric layer 54 was formed on the surface by performing such electrolytic polymerization (electropolymerization for 50 minutes at a constant current of 5 ⁇ A per anode body), water washing, alcohol washing, and drying six more times.
- a semiconductor layer 55 made of a conductive polymer was formed on the surface of the dielectric layer 54 of the anode body 52 (semiconductor layer forming step).
- the dielectric layer 54 was repaired by re-forming. This re-chemical conversion was performed for 15 minutes using the same solution as that used in the anodic oxidation at a limiting voltage of 6.3 V and a limiting current of 0.1 mA for each anode body (re-forming process).
- the second substrate 12 in a state where the anode body 52 is connected to the socket 1 is separated from the first substrate 11 (separation process), and carbon paste (“Electrodag PR-” manufactured by Atchison Co., Ltd.) is formed on the surface of the semiconductor layer 55. 406 "), the second substrate 12 with the anode body 52 connected to the socket 1 was left to stand in an atmosphere of 160 [deg.] C. for 3 hours (carbon layer forming step).
- the anode body 52 formed by laminating the dielectric layer 54, the semiconductor layer 55, and the carbon layer is washed with water and dried, and then a silver paste is applied to the surface of the carbon layer, and then the anode body 52 is connected to the socket 1.
- the second substrate 12 in the finished state was dried by leaving it in an atmosphere of 180 ° C. for 3 hours (silver paste laminating step). In this way, a capacitor element 56 was obtained.
- capacitor elements 56 can be manufactured through the above-described series of steps. By performing this 39 times (that is, 40 times in total), a total of 25600 capacitor elements 56 were manufactured.
- Example 1 there is a heat treatment step when manufacturing the capacitor element, but for the second substrate after separation from the first substrate (second substrate in which the anode body is connected to the socket).
- the electronic component mounted on the first substrate does not cause a malfunction such as malfunction. That is, the series of steps described above was performed 40 times in all, but no malfunction such as malfunction occurred in the electronic components mounted on the first substrate in all 40 times.
- Example 1 A glass epoxy substrate having a thickness of 1.6 mm arranged at the uppermost position among the five plates constituting the first substrate used in Example 1 (an electric circuit as shown in FIGS. 2 to 4 as in Example 1)
- the socket 1 used in the first embodiment is used in place of the electrical connection portion 44 and the first electrical connection terminal 41 in the first through hole 43 in the same manner. Inserted and fixed, and the collector C of the transistor 19 was electrically connected to the socket 1 to prepare 640 sockets 1 mounted on the lower surface of a 1.6 mm-thick substrate (this comparative example 1 Then, the lower four plates out of the five plates constituting the first substrate and the second substrate are not used).
- an anode body (conductor) 52 having a lead wire 53 was connected to each of the plurality of sockets 1 mounted on the lower surface of the substrate in the same manner as in Example 1.
- capacitor elements 56 can be manufactured through the above-described series of steps. By performing this process three more times (that is, four times in total), a total of 2560 capacitor elements 56 were manufactured.
- the number of elements in which the semiconductor layer protruded from the base (base end) of the lead wire 53 above the polytetrafluoroethylene washer (thickness: 0.10 mm) was 1352.
- this comparative example 1 since the third implementation, distortion deformation occurs relatively significantly in the 1.6 mm thick glass epoxy substrate held horizontally, and after the third implementation, the strainer is positioned above the washer.
- the number of elements formed by protruding semiconductor layers has increased remarkably.
- the set voltage and current are changed from the second implementation. Since a socket that does not reach the limit value appeared, there were 321 semiconductor layers that were not normally formed.
- the term present invention or inventory should not be construed inappropriately as identifying criticality, nor should it be construed as inappropriately applied across all aspects or all embodiments ( That is, the present invention should be understood to have numerous aspects and embodiments) and should not be construed inappropriately to limit the scope of the present application or the claims.
- the term “embodiment” is also used to describe any aspect, feature, process or step, any combination thereof, and / or any part thereof. It is done. In some examples, various embodiments may include overlapping features.
- the abbreviations “e.g.,” and “NB” may be used, meaning “for example” and “carefully”, respectively.
- the capacitor element manufacturing jig according to the present invention is suitably used as an electrolytic capacitor element manufacturing jig, but is not particularly limited to such applications. Further, the capacitor obtained by the manufacturing method of the present invention can be used for digital devices such as personal computers, cameras, game machines, AV devices, and mobile phones, and electronic devices such as various power sources.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
前記第1基板の下面の平面部に沿って平行状に配置される第2基板と、
前記第2基板の下面に実装された複数個のソケットと、を備え、
前記第1基板の下面の平面部に第1電気接続端子が設けられ、該第1電気接続端子は、個々に、コンデンサ用陽極体に電流を供給する電源に電気的に接続され、
前記第2基板の上面に第2電気接続端子が設けられ、該第2電気接続端子は、前記ソケットに電気的に接続され、
前記第2基板を前記第1基板の下面側に該第1基板の下面の平面部に対し平行に重ね合わせて配置した時に、前記第1電気接続端子が前記第2電気接続端子に接触して電気的に接続し、該接続によって前記ソケットが前記電源に電気的に接続されるものとなされ、
前記ソケットは、リード線を有するコンデンサ用陽極体のリード線を電気接続する際の該リード線の差込口を有し、前記差込口が前記第2基板の下方向に開かれていることを特徴とするコンデンサ素子製造用治具。
前記第1基板に貫通孔が設けられ、該貫通孔内に導電性の電気接続部が配置され、該電気接続部の一端部が前記第1基板の上面の電気回路に電気的に接続され、前記電気接続部の他端部は、前記第1電気接続端子に電気的に接続され、
前記第2基板を前記第1基板の下面側に該第1基板の下面の平面部に対し平行に重ね合わせて配置した時に、前記第1基板の下面の平面部から突出した第1電気接続端子の下端が、前記第2基板の上面の第2電気接続端子に接触して電気的に接続することを特徴とする前項2~4のいずれか1項に記載のコンデンサ素子製造用治具。
前記第2基板が前記第1基板の下面側に該第1基板に対し平行に重ね合わせて配置されて第1電気接続端子と第2電気接続端子とが接触して電気的に接続された状態にあり、
前記両基板が水平に保持された状態にあり、かつ、
前記陽極体が化成処理液中に浸漬された状態で、
前記陽極体を陽極にして通電することによって、前記陽極体の表面に誘電体層を形成する誘電体層形成工程と、
前記誘電体層形成工程の後に、陽極体がソケットに接続された状態の第2基板を、第1基板から分離する分離工程と、
前記分離工程の後に、前記第2基板のソケットに接続された状態の陽極体に対し熱処理を行う熱処理工程と、を含むことを特徴とするコンデンサ素子の製造方法。
前記第2基板が前記第1基板の下面側に該第1基板に対し平行に重ね合わせて配置されて第1電気接続端子と第2電気接続端子とが接触して電気的に接続された状態にあり、
前記両基板が水平に保持された状態にあり、かつ、
前記陽極体が半導体層形成用溶液中に浸漬された状態で、
前記陽極体を陽極にして通電することによって、前記誘電体層の表面に半導体層を形成する半導体層形成工程と、
前記半導体層形成工程の後に、陽極体がソケットに接続された状態の第2基板を、第1基板から分離する分離工程と、
前記分離工程の後に、前記第2基板のソケットに接続された状態の陽極体に対し熱処理を行う熱処理工程と、を含むことを特徴とするコンデンサ素子の製造方法。
前記第2基板が前記第1基板の下面側に該第1基板に対し平行に重ね合わせて配置されて第1電気接続端子と第2電気接続端子とが接触して電気的に接続された状態にあり、
前記両基板が水平に保持された状態にあり、かつ、
前記陽極体が化成処理液中に浸漬された状態で、
前記陽極体を陽極にして通電することによって、前記陽極体の表面に誘電体層を形成する誘電体層形成工程と、
前記誘電体層形成工程の後に、陽極体がソケットに接続された状態の前記第2基板が前記第1基板の下面側に該第1基板に対し平行に重ね合わせて配置されて第1電気接続端子と第2電気接続端子とが接触して電気的に接続された状態にあり、
前記両基板が水平に保持された状態にあり、かつ、
前記陽極体が半導体層形成用溶液中に浸漬された状態で、
前記陽極体を陽極にして通電することによって、前記陽極体表面の誘電体層の表面に半導体層を形成する半導体層形成工程と、を含み、
前記誘電体層形成工程と前記半導体層形成工程の間に、及び/又は前記半導体層形成工程の後に、
陽極体がソケットに接続された状態の第2基板を、第1基板から分離し、次いで前記第2基板のソケットに接続された状態の陽極体に対し熱処理を行う分離・熱処理工程をさらに備えることを特徴とするコンデンサ素子の製造方法。
[陽極体(導電体)52の作製]
長さ0.80mm×幅0.53mm×厚さ0.43mmの直方体形状のタンタル焼結体(陽極体)52の0.53mm×0.43mmの面(上面)に、長さ10.4±0.3mm、直径0.15mmのタンタル線(リード線)53が植立されたものを640個準備した。更に、外径0.40mm、内径0.10mm、厚さ0.10mmのポリテトラフルオロエチレン製の環状のワッシャーをリード線53の根元まで装着した(外装した)。
(電子部品が実装された第1基板)
長さ180mm×幅96mm×厚さ1.6mmのガラスエポキシ基板(第1基板11を構成する5枚の板のうち最上位置に配置される板)を準備した。このガラスエポキシ基板には、図2に示すように、該基板の長さ方向に沿って64個の第1貫通孔43が2.54mmピッチで形成され、これら一列に延びた64個の第1貫通孔43の群が、基板の幅方向に沿って8mmピッチで合計で10列形成されている(なお、図2では、作図上の理由により9列のみ記載している)。即ち、前記ガラスエポキシ基板には、合計で640個の第1貫通孔43が形成されている。
第2基板12は、長さ180mm×幅96mm×厚さ1.6mmのガラスエポキシ基板からなる。前記第2基板12に第3貫通孔49が形成されている(図5、8参照)。前記第3貫通孔49は、第2基板12の長さ方向に沿って64個が2.54mmピッチで設けられ、これら一列に延びた64個の第3貫通孔49が、第2基板12の幅方向に沿って8mmピッチで合計10列設けられている(図5参照、図5では作図上の理由から9列のみ記載している)。
前項で詳述した図9に示す構成で第2基板12を第1基板11の下面側に該第1基板の下面の平面部11aに対し平行に重ね合わせて両基板11、12同士を位置決めしつつ相互に固定する(図9参照)。これにより、図8、図10に示すように、前記第1基板11の下面から突出した第1電気接続端子41の下端が、前記第2基板12の上面の第2電気接続端子42に接触して電気的に接続される。
実施例1で用いる第1基板を構成する5枚の板のうちの最上位置に配置される厚さ1.6mmのガラスエポキシ基板(実施例1と同様に図2~4に示すように電気回路が形成され、且つ上面に同様に電子部品も実装されている)における第1貫通孔43内に、電気接続部44及び第1電気接続端子41に代えて、実施例1で用いたソケット1を挿通配置せしめて固定し、該ソケット1にトランジスタ19のコレクタCを電気接続して、厚さ1.6mmの基板の下面に640個のソケット1が実装されたものを準備した(この比較例1では、第1基板を構成する5枚の板のうちの下4枚の板および第2基板は使用しない)。
10…コンデンサ素子製造用治具
11…第1基板
11a…平面部
12…第2基板
14…電流制限端子
15…電圧制限端子
18…抵抗器
19…トランジスタ
30…電気回路
32…電源
37…リード線差込口
41…第1電気接続端子
42…第2電気接続端子
43…第1貫通孔
44…電気接続部
51…陰極板
52…陽極体(導電体)
53…リード線
54…誘電体層
55…半導体層
56…コンデンサ素子
59…処理液(化成処理液、半導体層形成用溶液)
Claims (13)
- 下面に平面部を有する第1基板と、
前記第1基板の下面の平面部に沿って平行状に配置される第2基板と、
前記第2基板の下面に実装された複数個のソケットと、を備え、
前記第1基板の下面の平面部に第1電気接続端子が設けられ、該第1電気接続端子は、個々に、コンデンサ用陽極体に電流を供給する電源に電気的に接続され、
前記第2基板の上面に第2電気接続端子が設けられ、該第2電気接続端子は、前記ソケットに電気的に接続され、
前記第2基板を前記第1基板の下面側に該第1基板の下面の平面部に対し平行に重ね合わせて配置した時に、前記第1電気接続端子が前記第2電気接続端子に接触して電気的に接続し、該接続によって前記ソケットが前記電源に電気的に接続されるものとなされ、
前記ソケットは、リード線を有するコンデンサ用陽極体のリード線を電気接続する際の該リード線の差込口を有し、前記差込口が前記第2基板の下方向に開かれていることを特徴とするコンデンサ素子製造用治具。 - 前記電源が、前記第1基板の少なくとも片面に形成された電気回路からなり、個々の前記第1電気接続端子は、それぞれ個々の前記電源に電気的に接続されている請求項1に記載のコンデンサ素子製造用治具。
- 前記電気回路が定電流回路である請求項2に記載のコンデンサ素子製造用治具。
- 前記電気回路は、個々の前記ソケット毎に電圧を制限する回路でもある請求項2または3に記載のコンデンサ素子製造用治具。
- 前記第1電気接続端子の下端は、前記第1基板の下面の平面部から下方に向けて突出し、
前記第1基板に貫通孔が設けられ、該貫通孔内に導電性の電気接続部が配置され、該電気接続部の一端部が前記第1基板の上面の電気回路に電気的に接続され、前記電気接続部の他端部は、前記第1電気接続端子に電気的に接続され、
前記第2基板を前記第1基板の下面側に該第1基板の下面の平面部に対し平行に重ね合わせて配置した時に、前記第1基板の下面の平面部から突出した第1電気接続端子の下端が、前記第2基板の上面の第2電気接続端子に接触して電気的に接続することを特徴とする請求項2~4のいずれか1項に記載のコンデンサ素子製造用治具。 - 前記導電性電気接続部は、バネ端子である請求項5に記載のコンデンサ素子製造用治具。
- 前記第1基板の厚さは、前記第2基板の厚さより大きい請求項1~6のいずれか1項に記載のコンデンサ素子製造用治具。
- 前記第1基板の厚さが5mm以上である請求項7に記載のコンデンサ素子製造用治具。
- 請求項1~8のいずれか1項に記載のコンデンサ素子製造用治具のソケットにコンデンサ用陽極体が接続されると共に、
前記第2基板が前記第1基板の下面側に該第1基板に対し平行に重ね合わせて配置されて第1電気接続端子と第2電気接続端子とが接触して電気的に接続された状態にあり、
前記両基板が水平に保持された状態にあり、かつ、
前記陽極体が化成処理液中に浸漬された状態で、
前記陽極体を陽極にして通電することによって、前記陽極体の表面に誘電体層を形成する誘電体層形成工程と、
前記誘電体層形成工程の後に、陽極体がソケットに接続された状態の第2基板を、第1基板から分離する分離工程と、
前記分離工程の後に、前記第2基板のソケットに接続された状態の陽極体に対し熱処理を行う熱処理工程と、を含むことを特徴とするコンデンサ素子の製造方法。 - 請求項1~8のいずれか1項に記載のコンデンサ素子製造用治具のソケットに、表面に誘電体層が設けられた陽極体が接続されると共に、
前記第2基板が前記第1基板の下面側に該第1基板に対し平行に重ね合わせて配置されて第1電気接続端子と第2電気接続端子とが接触して電気的に接続された状態にあり、
前記両基板が水平に保持された状態にあり、かつ、
前記陽極体が半導体層形成用溶液中に浸漬された状態で、
前記陽極体を陽極にして通電することによって、前記誘電体層の表面に半導体層を形成する半導体層形成工程と、
前記半導体層形成工程の後に、陽極体がソケットに接続された状態の第2基板を、第1基板から分離する分離工程と、
前記分離工程の後に、前記第2基板のソケットに接続された状態の陽極体に対し熱処理を行う熱処理工程と、を含むことを特徴とするコンデンサ素子の製造方法。 - 請求項1~8のいずれか1項に記載のコンデンサ素子製造用治具のソケットにコンデンサ用陽極体が接続されると共に、
前記第2基板が前記第1基板の下面側に該第1基板に対し平行に重ね合わせて配置されて第1電気接続端子と第2電気接続端子とが接触して電気的に接続された状態にあり、
前記両基板が水平に保持された状態にあり、かつ、
前記陽極体が化成処理液中に浸漬された状態で、
前記陽極体を陽極にして通電することによって、前記陽極体の表面に誘電体層を形成する誘電体層形成工程と、
前記誘電体層形成工程の後に、陽極体がソケットに接続された状態の前記第2基板が前記第1基板の下面側に該第1基板に対し平行に重ね合わせて配置されて第1電気接続端子と第2電気接続端子とが接触して電気的に接続された状態にあり、
前記両基板が水平に保持された状態にあり、かつ、
前記陽極体が半導体層形成用溶液中に浸漬された状態で、
前記陽極体を陽極にして通電することによって、前記陽極体表面の誘電体層の表面に半導体層を形成する半導体層形成工程と、を含み、
前記誘電体層形成工程と前記半導体層形成工程の間に、及び/又は前記半導体層形成工程の後に、
陽極体がソケットに接続された状態の第2基板を、第1基板から分離し、次いで前記第2基板のソケットに接続された状態の陽極体に対し熱処理を行う分離・熱処理工程をさらに備えることを特徴とするコンデンサ素子の製造方法。 - 前記熱処理を200℃~500℃で行う請求項9~11のいずれか1項に記載のコンデンサ素子の製造方法。
- 請求項9~12のいずれか1項に記載の製造方法で得たコンデンサ素子の陽極体及び半導体層に、それぞれ電極端子を電気的に接続し、前記電極端子の一部を残して封止するコンデンサの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013548113A JP6184872B2 (ja) | 2011-12-07 | 2012-09-05 | コンデンサ素子製造用治具及びコンデンサ素子の製造方法 |
EP12856114.9A EP2790198B1 (en) | 2011-12-07 | 2012-09-05 | Jig for manufacturing capacitor element and method for manufacturing capacitor element |
US14/362,696 US20140367268A1 (en) | 2011-12-07 | 2012-09-05 | Jig for manufacturing capacitor element and method for manufacturing capacitor element |
CN201280060494.1A CN103988273B (zh) | 2011-12-07 | 2012-09-05 | 电容元件制造用夹具和电容元件的制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011267542 | 2011-12-07 | ||
JP2011-267542 | 2011-12-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013084551A1 true WO2013084551A1 (ja) | 2013-06-13 |
Family
ID=48573935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/072584 WO2013084551A1 (ja) | 2011-12-07 | 2012-09-05 | コンデンサ素子製造用治具及びコンデンサ素子の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20140367268A1 (ja) |
EP (1) | EP2790198B1 (ja) |
JP (1) | JP6184872B2 (ja) |
CN (1) | CN103988273B (ja) |
WO (1) | WO2013084551A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10213237B2 (en) | 2014-10-03 | 2019-02-26 | Stryker European Holdings I, Llc | Periprosthetic extension plate |
CN105568350A (zh) * | 2015-12-09 | 2016-05-11 | 中国电子科技集团公司第四十一研究所 | 穿心电容器信号传输线的电镀夹具及其使用方法 |
US10301740B2 (en) * | 2015-12-14 | 2019-05-28 | Solarcity Corporation | Systems, methods and apparatus for electroplating photovoltaic cells |
US10251685B2 (en) | 2016-03-17 | 2019-04-09 | Stryker European Holdings I, Llc | Floating locking insert |
US9969030B2 (en) * | 2016-05-12 | 2018-05-15 | Pacesetter, Inc. | Laser drilling of metal foils for assembly in an electrolytic capacitor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010107011A1 (ja) | 2009-03-17 | 2010-09-23 | 昭和電工株式会社 | 固体電解コンデンサ素子、その製造方法及びその製造用冶具 |
WO2011074512A1 (ja) * | 2009-12-15 | 2011-06-23 | 昭和電工株式会社 | ソケット及び該ソケットを用いたコンデンサ素子製造用治具 |
JP2011238740A (ja) * | 2010-05-10 | 2011-11-24 | Murata Mfg Co Ltd | コンデンサ製造用治具及びコンデンサ製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3358414B2 (ja) * | 1995-12-28 | 2002-12-16 | 松下電器産業株式会社 | アルミ電解コンデンサ用電極端子 |
US5707241A (en) * | 1996-07-01 | 1998-01-13 | General Motors Corporation | Slide locking connector |
JP4275044B2 (ja) * | 2004-02-04 | 2009-06-10 | 三洋電機株式会社 | 固体電解コンデンサおよびその製造方法 |
EP1865519A4 (en) * | 2005-03-24 | 2018-03-14 | Showa Denko K.K. | Solid-electrolyte capacitor manufacturing device and manufacturing method |
JP5305569B2 (ja) * | 2006-06-29 | 2013-10-02 | 三洋電機株式会社 | 電解コンデンサの製造方法および電解コンデンサ |
TW201023220A (en) * | 2008-12-01 | 2010-06-16 | Sanyo Electric Co | Method of manufacturing solid electrolytic capacitor |
CN201425819Y (zh) * | 2009-04-17 | 2010-03-17 | 袁钖鸿 | 一种柔性显示屏 |
KR101387787B1 (ko) * | 2009-12-21 | 2014-04-21 | 쇼와 덴코 가부시키가이샤 | 콘덴서 소자 제조용 반응 용기 및 콘덴서 소자의 제조 방법 |
-
2012
- 2012-09-05 WO PCT/JP2012/072584 patent/WO2013084551A1/ja active Application Filing
- 2012-09-05 US US14/362,696 patent/US20140367268A1/en not_active Abandoned
- 2012-09-05 JP JP2013548113A patent/JP6184872B2/ja not_active Expired - Fee Related
- 2012-09-05 CN CN201280060494.1A patent/CN103988273B/zh not_active Expired - Fee Related
- 2012-09-05 EP EP12856114.9A patent/EP2790198B1/en not_active Not-in-force
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010107011A1 (ja) | 2009-03-17 | 2010-09-23 | 昭和電工株式会社 | 固体電解コンデンサ素子、その製造方法及びその製造用冶具 |
WO2011074512A1 (ja) * | 2009-12-15 | 2011-06-23 | 昭和電工株式会社 | ソケット及び該ソケットを用いたコンデンサ素子製造用治具 |
JP2011238740A (ja) * | 2010-05-10 | 2011-11-24 | Murata Mfg Co Ltd | コンデンサ製造用治具及びコンデンサ製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2790198A4 * |
Also Published As
Publication number | Publication date |
---|---|
CN103988273B (zh) | 2017-08-04 |
CN103988273A (zh) | 2014-08-13 |
JP6184872B2 (ja) | 2017-08-23 |
US20140367268A1 (en) | 2014-12-18 |
JPWO2013084551A1 (ja) | 2015-04-27 |
EP2790198A1 (en) | 2014-10-15 |
EP2790198B1 (en) | 2016-11-09 |
EP2790198A4 (en) | 2015-09-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6771488B2 (en) | Solid electrolytic capacitor and method of manufacturing the capacitor | |
JP6184872B2 (ja) | コンデンサ素子製造用治具及びコンデンサ素子の製造方法 | |
JP2008098394A (ja) | 固体電解コンデンサ | |
US9305712B2 (en) | Tantalum capacitor and method of manufacturing the same | |
TWI400732B (zh) | Manufacturing method of capacitor for capacitor, capacitor manufacturing method and capacitor | |
US7919383B2 (en) | Capacitor element manufacturing jig and capacitor element manufacturing method | |
KR101477446B1 (ko) | 연결 소켓, 상기 연결 소켓을 사용한 콘덴서 소자 제조용 지그, 콘덴서 소자의 제조 방법, 및 콘덴서의 제조 방법 | |
US8993403B2 (en) | Socket, and capacitor element producing jig using socket | |
US9330852B2 (en) | Tantalum capacitor and method of manufacturing the same | |
TWI437591B (zh) | Manufacturing container for capacitor element manufacturing, manufacturing method of capacitor element, and method for manufacturing capacitor | |
KR102052763B1 (ko) | 탄탈륨 캐패시터 및 그 제조 방법 | |
JP5269261B1 (ja) | コンデンサ素子製造用治具及びコンデンサ素子の製造方法 | |
JP4985571B2 (ja) | 電子部品およびその製造方法 | |
US9384899B2 (en) | Tantalum capacitor and method of manufacturing the same | |
KR20210063887A (ko) | 전자 부품 | |
JP2011216795A (ja) | 積層固体電解コンデンサ及びその製造方法 | |
JP2014192231A (ja) | 固体電解コンデンサの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12856114 Country of ref document: EP Kind code of ref document: A1 |
|
DPE1 | Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101) | ||
ENP | Entry into the national phase |
Ref document number: 2013548113 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
REEP | Request for entry into the european phase |
Ref document number: 2012856114 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012856114 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14362696 Country of ref document: US |