WO2013075361A1 - 一种阵列基板、液晶显示装置及阵列基板制作方法 - Google Patents

一种阵列基板、液晶显示装置及阵列基板制作方法 Download PDF

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Publication number
WO2013075361A1
WO2013075361A1 PCT/CN2011/083431 CN2011083431W WO2013075361A1 WO 2013075361 A1 WO2013075361 A1 WO 2013075361A1 CN 2011083431 W CN2011083431 W CN 2011083431W WO 2013075361 A1 WO2013075361 A1 WO 2013075361A1
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pixel electrode
array substrate
common line
liquid crystal
thin film
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PCT/CN2011/083431
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English (en)
French (fr)
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陈政鸿
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深圳市华星光电技术有限公司
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Priority to US13/378,834 priority Critical patent/US8879038B2/en
Publication of WO2013075361A1 publication Critical patent/WO2013075361A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
    • G02F1/13775—Polymer-stabilized liquid crystal layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
    • G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
    • G02F1/1393—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent the birefringence of the liquid crystal being electrically controlled, e.g. ECB-, DAP-, HAN-, PI-LC cells

Definitions

  • the present invention relates to the field of liquid crystal display, and more particularly to an array substrate, a liquid crystal display device, and a method of fabricating an array substrate.
  • the liquid crystal display device includes a liquid crystal panel including an array substrate and a color filter (CF) opposed to each other, and the liquid crystal is filled in the middle.
  • a plurality of pixel electrodes 4 are disposed on the array substrate, and a common electrode is disposed on the color filter plate.
  • the voltage between the pixel electrode 4 and the common electrode can be adjusted to control the tilt angle of the liquid crystal molecules, thereby forming different gray scales.
  • the viewing angle of a liquid crystal display is relatively small, and a liquid crystal display mode such as PVA or PSVA can have a wide viewing angle.
  • PSVA Polymer Stability Vertical Alignment
  • the shape of the power line caused by the pixel design can roughly form the liquid crystal molecules in four directions, and then exist through the liquid crystal or the alignment layer.
  • the light or thermal reaction material, illumination or heating causes the liquid crystal molecules on the surface of the alignment layer to solidify and form a pretilt angle in four directions, which is the well-known principle of PSVA.
  • PSVA technology described in the present document generally refers to the generalized PSVA technology, and can be referred to the following four introductions:
  • the pixel electrode 4 of the PSVA has a feather shape.
  • the pixel electrode 4 must have an electrode slit to utilize the distribution of the power line so that the liquid crystal molecules are roughly dumped in the designed direction and then heated or The liquid crystal on the surface of the alignment layer is cured to form a pretilt angle.
  • the component of the vertical direction of the electric field above the electrode slit is small, and the liquid crystal is divided. The child is not able to do the most effective dumping here, so the brightness of the electrode slit region is slightly darker than the electrode region.
  • the brightness or transparency of the panel is strongly related to the width of the slit of the pixel electrode 4, so when the process produces a local slit width variation, the screen may have local brightness unevenness to generate dots (Mura).
  • the technical problem to be solved by the present invention is to provide an array substrate, a liquid crystal display device, and an array substrate manufacturing method which improve the brightness, viewing angle characteristics, and dot problems of a liquid crystal display device.
  • An array substrate comprising a plurality of thin film transistors, a first pixel electrode connected to a drain of the thin film transistor, the array substrate further comprising mutually insulated second pixel electrodes disposed on the bottom layer of the first pixel electrode.
  • the array substrate includes a common line
  • the second pixel electrode is located between the first pixel electrode and the common line
  • the first pixel electrode, the second pixel electrode, and the common line are insulated from each other.
  • the second pixel electrode is provided with a gap between the first pixel electrode and the common line, so that there is only an insulating material between the first pixel electrode and the common line, and there is no barrier of metal material,
  • the storage capacitance formed between the two is relatively large to ensure that the power of the storage capacitor is sufficient to maintain the liquid crystal deflection during the interval of two scanning periods.
  • the array substrate is provided with a plurality of inwardly contacting contact windows, and the first pixel electrode extends into the contact window to be electrically connected to the drain of the thin film transistor.
  • the first pixel electrode is connected to the drain of the thin film transistor.
  • a liquid crystal display device comprising the above array substrate.
  • a method of manufacturing an array substrate comprising the steps of:
  • a common line is formed on the glass substrate.
  • This is an embodiment of an array substrate comprising common lines.
  • the step B when the second pixel electrode is formed, a gap is formed in the overlapping area of the first pixel electrode and the common line, so that only the insulating material is disposed between the first pixel electrode and the common line.
  • the storage capacitance formed between the two is relatively large, so as to ensure that the power of the storage capacitor is sufficient to maintain the liquid crystal deflection during the interval of two scanning periods.
  • a gap is left in the overlap region of the drain of the first pixel electrode and the thin film transistor, when the first pixel electrode is formed. Synchronously form a contact window.
  • a second pixel electrode is disposed between the first pixel electrode and the common line, and the second pixel electrode is a floating electrode, and is not electrically connected to other portions.
  • the voltage difference between the first pixel electrode and the common electrode of the color filter (CF) is VI
  • there is a potential difference of V2 between the common electrode and the common electrode due to the voltage division of the second pixel electrode so there is a VI ⁇ V2 relationship, so the distribution of its power line will still cause the liquid crystal molecules to dump in the direction of the design.
  • the present invention can increase the transmittance of the pixels, improve the visual character deviation characteristics of the panel, and reduce the uneven brightness (mura) caused by local variation of the electrode line width.
  • FIG. 1 is a schematic diagram of a pixel structure of a conventional PSVA mode
  • Figure 2 is a schematic cross-sectional view showing the pixel structure of the present invention.
  • Figure 3 is a schematic view showing the structure of a pixel of the present invention.
  • Figure 4 is a partially enlarged schematic view showing the structure of the pixel of the present invention.
  • Figure 5 is a cross-sectional view taken along line A-A' of Figure 4.
  • FIG. 6 is a partially enlarged schematic view showing a common line region of a pixel structure of the present invention.
  • Figure 7 is a schematic cross-sectional view taken along line BB' of Figure 6;
  • Figure 8 is a schematic diagram of the principle of the present invention.
  • Figure 9 is a pressure difference line diagram of the present invention.
  • Figure 10 is a brightness graph of the present invention.
  • a liquid crystal display device includes an array substrate including a plurality of thin film transistors, and gates and sources respectively connected to the thin film transistors (thin film transistors (TFTs) 3) , drain connected scan line 2, data line 1, pixel structure.
  • TFTs thin film transistors
  • the thin film transistor (TFT) 3 and the pixel structure are shown in Fig. 2.
  • the left side of the figure is a thin film transistor (TFT) 3, and the right side is a pixel structure, both of which are located on the same glass substrate.
  • the thin film transistor (TFT) 3 is, in order from the glass substrate, the first metal layer 31, the insulating layer 32, the active layer 33, the ohmic contact layer 34, the second metal layer 35, the first passivation layer 36, and the second blunt
  • the layer 37, the side of the second metal layer 35 close to the pixel structure is the drain of the thin film transistor (TFT) 3, and the other side is the source connected to the data line 1.
  • the pixel structure includes a common line 41, an insulating layer 32, a first passivation layer 36, a second pixel electrode 44, a second passivation layer 37, and a first pixel electrode 43 in order from the glass substrate.
  • the first pixel electrode 43 is connected to the drain of the thin film transistor (TFT) 3 through the first passivation layer 36 and the second passivation layer 37 to form the contact window 42.
  • the second pixel electrode 44 is provided with a notch 45 in the overlapping area of the first pixel electrode 43 and the common line 41 to increase the storage capacitance (Cst2) between the first pixel electrode 43 and the common line 41. .
  • the above array substrate can be fabricated by using a conventional photomask process, that is, the above structures are sequentially formed on a glass substrate by deposition, exposure, development, etching, etc., and the specific steps include:
  • the first metal layer 31 and the common line 41 are formed on the glass substrate by deposition, exposure, development, and etching processes;
  • an active layer 33 and an ohmic contact layer are sequentially formed by deposition, exposure, development, and etching;
  • a contact window 42 is formed by depositing, exposing, developing, etching at a position where the second metal layer 35 and the first pixel electrode 43 are required to be connected;
  • FIG. 8 is an equivalent circuit diagram of the pixel structure described above, which has an additional design compared to the conventional circuit structure.
  • a second transparent conductive layer as the pixel electrode 44 thus formed between the capacitance C a and 43 will form a first storage capacitor (Cstl are) between the common line 41 (Com line) with a first pixel electrode.
  • the above design is in the process of applying voltage to the PSVA liquid crystal display device, if the first pixel electrode 43 is colored There is a potential difference of VI between the common electrodes on the filter plate (CF), and the capacitance between the two is C LC2 ; and the second pixel electrode 44 is a floating between the common line 41 and the first pixel electrode 43.
  • the capacitance between the electrode and the common electrode is C LC1 . Because of the voltage division of the capacitor, there is a potential difference between V2 and the common electrode. Therefore, there is a relationship between V1 and V2, so the distribution of the power line still causes the liquid crystal.
  • the molecules are generally dumped in the direction in which they are designed, at which point the liquid crystal that heats or illuminates the surface of the alignment layer will form a pretilt angle.
  • an appropriate voltage is input from the data line 1
  • the potential of the second pixel electrode 44 is the partial pressure of the first pixel electrode 43
  • the two pixels are The relationship between the potential difference (Velectrode) and the voltage between the electrode and the common electrode is as shown in Fig. 9. Therefore, the brightness of Vin corresponding to the two-pixel electrode region is as shown in Fig.
  • the pixel electrodes reach the brightness saturation point, and the difference in brightness corresponding to the two pixel electrodes is small, so that a higher transmittance than the conventional method can be obtained; in addition, when the intermediate gray scale is driven, the first and the first pixel electrodes are different.
  • the potential of the liquid crystal will correspond to different degrees of liquid crystal tilting, and this has an improved effect on the visual character bias.

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Abstract

一种阵列基板，包括多个薄膜晶体管（3）、与所述薄膜晶体管（3）的漏极连接的第一画素电极（43），以及设在第一画素电极（43）底层的相互绝缘的第二画素电极（44）。所述阵列基板还包括共通线（41），所述第二画素电极（44）位于所述第一画素电极（43）和共通线（41）之间，所述第一画素电极（43）、第二画素电极（44）和共通线（41）之间相互绝缘，所述第二画素电极（44）在所述第一画素电极（43）和共通线（41）的叠交区域设有缺口（45）。该阵列基板可以增加画素的穿透率，改善视角色偏特性，并减轻因为电极线宽局部变异而造成的亮度不均匀现象。

Description

一种阵列基板、 液晶显示装置及阵列基板制作方法
【技术领域】
本发明涉及液晶显示领域， 更具体的说， 涉及一种阵列基板、 液晶显示装 置及阵列基板制作方法。
【背景技术】
液晶显示装置包括液晶面板， 液晶面板包括相互对置的阵列基板和彩色滤 光板（CF ), 中间注满了液晶。 阵列基板上设有多个画素电极 4, 彩色滤光板上 设有公共电极， 调整画素电极 4和公共电极之间的电压就能控制液晶分子的倾 角， 从而形成不同的灰阶。 一般液晶显示器的视角比较小， 采用 PVA, PSVA等 液晶显示模式可以具有较宽泛的视角， 以 PSVA (Polymer stability vertical alignment)为例，如图 1所述， 为一传统的聚合物稳定垂直对齐模式的画素设计，
D 四个不同的方向， 当上下板电极存在有电位差时， 其画素设计所造成的电力 线的形貌可将液晶分子大略地形成四个方向的倾倒， 再通过液晶或是配向层中 所存在的光或热反应材料， 照光或是加热使得配向层表面的液晶分子固化并往 四个方向形成预倾角， 这就是一般所熟知的 PSVA原理。
本发明文件所述的 PSVA技术泛指广义的 PSVA技术，可参考下面四篇介绍:
1. SID' 04 Digest, p.1200; PSA
2. SID' 09Digest, p.666; SC-PVA
3. IDW' 09, p.747; SC-PVA
4. SET 10 Digest, p.595 FPA
一般 PSVA之画素电极 4呈现羽毛形状， 在 PSVA制程之加电压的过程中， 画素电极 4必须要存在着电极狭缝才可以利用电力线之分布使得液晶分子大致 地往所设计的方向倾倒而后加热或照光固化配向层表面的液晶而形成预倾角。 但实际在亮态驱动下， 由于电极狭缝上方之电场垂直方向的分量较小， 液晶分 子在此并无法做最有效的倾倒， 因此电极狭缝区的亮度会较电极区稍暗。
另外， 面板的亮度或穿透度与画素电极 4狭缝之宽度尺寸强烈相关， 所以 当制程产生局部狭缝宽度变异时， 画面会有局部亮度不均匀的现象产生网点 (Mura
【发明内容】
本发明所要解决的技术问题是提供一种改善液晶显示装置的亮度、 视角特 性和网点问题的阵列基板、 液晶显示装置及阵列基板制作方法。
本发明的目的是通过以下技术方案来实现的：
一种阵列基板， 包括多个薄膜晶体管、 与所述薄膜晶体管的漏极连接的第 一画素电极， 所述阵列基板还包括设在第一画素电极底层的相互绝缘的第二画 素电极。
优选的， 所述阵列基板包括共通线， 所述第二画素电极位于所述第一画素 电极和共通线之间， 所述第一画素电极、 第二画素电极、 共通线之间相互绝缘。 此为一种包括共通线的阵列基板的实施例。
优选的， 所述第二画素电极在所述第一画素电极和所述共通线的叠交区域 设有缺口， 这样第一画素电极和共通线之间只有绝缘材质， 没有金属材质的阻 隔， 两者之间形成的存储电容比较大， 以保障在两个扫描周期的间隔内,存储电 容的电量足够维持液晶偏转。
优选的， 所述阵列基板设有多个向内 陷的接触窗口， 所述第一画素电极 延伸入所述接触窗口内跟所述薄膜晶体管的漏极电气连接。 此为一种第一画素 电极跟薄膜晶体管的漏极连接的具体实施方式。
一种液晶显示装置， 包括上述的一种阵列基板。
一种阵列基板的制造方法， 包括以下步骤：
A: 在玻璃基板上形成第一钝化层；
B:在所述阵列基板的第一钝化层上面依次形成第二画素电极、第二钝化层、 第一画素电极。
优选的， 在所述步骤 A之前， 先在玻璃基板上形成共通线。 此为一种包括 共通线的阵列基板的实施例。
优选的， 所述步骤 B 中， 形成所述第二画素电极的时候， 在所述第一画素 电极和共通线的叠交区域形成缺口， 这样第一画素电极和共通线之间只有绝缘 材质， 没有金属材质的阻隔， 两者之间形成的存储电容比较大， 以保障在两个 扫描周期的间隔内，存储电容的电量足够维持液晶偏转。
优选的， 所述步骤 B 中， 形成所述第二钝化层的时候， 在所述第一画素电 极和所述薄膜晶体管的漏极叠交区域留有缺口， 在形成第一画素电极的时候同 步形成接触窗口。 此为一种第一画素电极跟薄膜晶体管的漏极连接的具体实施 方式， 不需要额外增加工序， 有利于提升工作效率， 降低成本。
本发明采用在第一画素电极和共通线之间加设第二画素电极， 所述第二画 素电极为浮接 (floating)电极， 不与其他部分产生电气连接。假设第一画素电极跟 彩色滤光板（CF )的公共电极之间的电压差为 VI , 由于第二画素电极电容分压 的缘故会与公共电极之间存在有 V2的电位差， 因此会存在有 VI≠ V2之关系， 所以其电力线之分布仍会使得液晶分子大致地往所设计的方向倾倒。 而在实际 的阵列基板驱动时， 由于 VI和 V2的差距不大， 因此施加一适当大之电压可使 第一与第一画素电极均达到亮度饱和点， 两画素电极所对应的亮度差异很小， 因此可以得到较传统方式为高的穿透率； 而在驱动中间灰阶时， 第二画素电极 与第一画素电极上方因为有不同的电位（Vl、 V2 )对应不同的液晶倾倒程度， 此对视角色偏也具有改善的功效。 另外， 本发明中液晶倾倒主要取决于第一画 素电极和第二画素电极之间的压差， 降低了电极狭缝的尺寸差异的影响， 因此 也就改善了网点 （mura ) 问题。 综上所述， 本发明可以增加画素的穿透率、 改 善面板的视角色偏特性，并减轻因为电极线宽局部变异所形成的亮度不均 (mura) 【附图说明】
图 1是现有的一种 PSVA模式的画素结构示意图；
图 2是本发明画素结构的剖面示意图；
图 3是本发明画素结构的示意图；
图 4是本发明画素结构的局部放大示意图；
图 5是图 4沿 A-A'方向的剖面示意图；
图 6是本发明画素结构共通线区域的局部放大示意图；
图 7是图 6沿 B-B'方向的剖面示意图；
图 8是本发明的原理示意图；
图 9是本发明的压差折线图；
图 10是本发明的亮度曲线图；
其中： 1、 资料线； 2、 扫描线； 3、 薄膜晶体管 （TFT ); 31、 第一金属层； 32、 绝缘层； 33、 有效层； 34、 欧姆接触层； 35、 第二金属层 ； 36、 第一钝化 层； 37、 第二钝化层； 4、 画素电极； 41、 共通线； 42、 接触窗口； 43、 第一画 素电极； 44、 第二画素电极； 45、 缺口。
【具体实施方式】
下面结合附图和较佳的实施例对本发明作进一步说明。
如图 1 ~ 7所示， 一种液晶显示装置， 包括一种阵列基板， 该阵列基板包括 多个薄膜晶体管， 以及分别与所述薄膜晶体管（薄膜晶体管（TFT ) 3 )的闸极、 源极、 漏极连接的扫描线 2、 资料线 1、 画素结构。
薄膜晶体管（TFT ) 3和画素结构如图 2所示， 图左侧为薄膜晶体管（TFT ) 3 , 右侧为画素结构， 两者都位于同一玻璃基板上。 薄膜晶体管 （TFT ) 3 从玻 璃基板算起， 上面依次为第一金属层 31、 绝缘层 32、 有效层 33、 欧姆接触层 34、 第二金属层 35、 第一钝化层 36和第二钝化层 37, 第二金属层 35靠近画素 结构的一侧为薄膜晶体管（TFT ) 3的漏极， 另外一侧为跟资料线 1连接的源极。 画素结构从玻璃基板算起，上面依次包括共通线 41、绝缘层 32、第一钝化层 36、 第二画素电极 44、 第二钝化层 37和第一画素电极 43。 第一画素电极 43穿透通 第一钝化层 36和第二钝化层 37跟薄膜晶体管 （ TFT ) 3的漏极连接， 形成所述 接触窗口 42。所述第二画素电极 44在所述第一画素电极 43和所述共通线 41的 叠交区域设有缺口 45 , 以增大第一画素电极 43 和共通线 41 之间的储存电容 (Cst2)。
上述阵列基板可采用目前常用的光罩制程制作， 即在玻璃基板上采用沉积、 曝光、 显影、 蚀刻等工序依次形成上述结构， 具体步骤包括：
1.在玻璃基板上采用沉积、 曝光、 显影、 蚀刻工序制成第一金属层 31和共 通线 41 ;
2.在第一金属层 31上沉积形成绝缘层 32(Isolator);
3.在绝缘层 32上采用沉积、曝光、显影、蚀刻依次制成有效层 33(active layer) 与敗姆接触层 34(ohmic contact layer);
4.在绝缘层 32和欧姆接触层 34上采用沉积、 曝光、 显影、 蚀刻制成第二 金属层 35 (此步骤同时需蚀刻欧姆接触层 34);
5.在整个阵列基板表面沉积形成第一钝化层 36;
6.在第一钝化层 36上采用沉积、 曝光、 显影、 蚀刻制成第一透明导电层， 即第二画素电极 44, 并在第一画素电极 43和共通线 41的叠交区域设缺口 45。
7.在整个阵列基板表面沉积形成第二钝化层 37;
8.在需要连接第二金属层 35和第一画素电极 43的位置采用沉积、 曝光、 显影、 蚀刻制成接触窗口 42(VIA);
9.在第二钝化层 37上采用沉积、 曝光、 显影、 蚀刻制成第二透明导电层； 图 8 为上面所述画素结构的等效电路图， 相较于传统电路结构由于此设计 具有额外的透明导电层作为第二画素电极 44因此会与之第一画素电极 43之间 形成 CA电容且会与共通线 41 ( Com Line ) 间会形成第一储存电容 (Cstl)。
上述设计在 PSVA液晶显示装置加电压过程中， 第一画素电极 43若与彩色 滤光板 ( CF )上的公共电极间存在有 VI之电位差， 两者之间的电容为 CLC2; 而第二画素电极 44为共通线 41与第一画素电极 43间的浮接 (floating)电极， 其 跟公共电极间的电容为 CLC1,由于电容分压的缘故会与公共电极间存在有 V2之 电位差， 因此会存在有 V1≠V2之关系， 所以其电力线之分布仍会使得液晶分 子大致地往所设计的方向倾倒， 此时加热或照光固化配向层表面的液晶会形成 预倾角。 而在实际面板驱动时， 若由资料线 1 输入一适当电压， 其与公共电极 间具有 Vin之电位差， 由于第二画素电极 44之电位为第一画素电极 43之分压 的关系， 两画素电极与公共电极间的电位差 (Velectrode)与 Vin 的关系如下图 9 所示， 所以 Vin对应两画素电极区域的亮度如下图 10所示， 故施加一适当大之 电压可使第一与第一画素电极均达到亮度饱和点， 两画素电极所对应的亮度差 异很小， 因此可以得到较传统方式为高的穿透率； 此外在驱动中间灰阶时， 第 一与第一画素电极上方因为不同的电位所以会对应不同的液晶倾倒程度， 此对 视角色偏也具有改善的功效。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明， 不 能认定本发明的具体实施只局限于这些说明。 对于本发明所属技术领域的普通 技术人员来说， 在不脱离本发明构思的前提下， 还可以做出若干筒单推演或替 换， 都应当视为属于本发明的保护范围。

Claims

1、 一种阵列基板， 包括： 多个薄膜晶体管， 与所述薄膜晶体管的漏极 连接
的第一画素电极， 以及设在第一画素电极底层的相互绝缘的第二画素 电极。
2、 权利要求 1所述的一种阵列基板， 其特征在于， 所述阵列基板包括 共通线， 所述第二画素电极位于所述第一画素电极和共通线之间， 所述第 一画素电极、 第二画素电极、 共通线之间相互绝缘。
3、 如权利要求 1所述的一种阵列基板， 其特征在于， 所述第二画素电 极在所述第一画素电极和所述共通线的叠交区域设有缺口。
4、 如权利要求 1所述的一种阵列基板， 其特征在于， 所述阵列基板设 有多个向内凹陷的接触窗口， 所述第一画素电极延伸入所述接触窗口内跟 所述薄膜晶体管的漏极电气连接。
5、 一种液晶显示装置， 包括如权利要求 1所述的一种阵列基板， 所述 阵列基板包括多个薄膜晶体管， 与所述薄膜晶体管的漏极连接的第一画素 电极， 以及设在第一画素电极底层的相互绝缘的第二画素电极。
6、 权利要求 5所述的一种液晶显示装置， 其特征在于， 所述阵列基板 包括共通线， 所述第二画素电极位于所述第一画素电极和共通线之间， 所 述第一画素电极、 第二画素电极、 共通线之间相互绝缘。
7、 如权利要求 5所述的一种液晶显示装置， 其特征在于， 所述第二画 素电极在所述第一画素电极和所述共通线的叠交区域设有缺口。
8、 如权利要求 5所述的一种液晶显示装置， 其特征在于， 所述阵列基 板设有多个向内凹陷的接触窗口， 所述第一画素电极延伸入所述接触窗口 内跟所述薄膜晶体管的漏极电气连接。
9、 一种阵列基板的制造方法， 包括以下步骤： A: 在玻璃基板上形成第一钝化层；
B: 在所述阵列基板的第一钝化层上面依次形成第二画素电极、第二钝 化层、 第一画素电极。
10、 如权利要求 9所述的一种阵列基板的制造方法， 其特征在于， 在 所述步骤 A之前， 先在玻璃基板上形成共通线。
11、 如权利要求 10所述的一种阵列基板的制造方法， 其特征在于， 所 述步骤 B中， 形成所述第二画素电极的时候， 在所述第一画素电极和共通 线的叠交区域形成缺口。
12、 如权利要求 10所述的一种阵列基板的制造方法， 其特征在于， 所 述步骤 B中， 形成所述第二钝化层的时候， 在所述第一画素电极和所述薄 膜晶体管的漏极叠交区域留有缺口， 在形成第一画素电极的时候同步形成 接触窗口。
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