WO2013055921A1 - Système de dépôt - Google Patents

Système de dépôt Download PDF

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Publication number
WO2013055921A1
WO2013055921A1 PCT/US2012/059755 US2012059755W WO2013055921A1 WO 2013055921 A1 WO2013055921 A1 WO 2013055921A1 US 2012059755 W US2012059755 W US 2012059755W WO 2013055921 A1 WO2013055921 A1 WO 2013055921A1
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WO
WIPO (PCT)
Prior art keywords
section
chamber
layer
substrate
graphite
Prior art date
Application number
PCT/US2012/059755
Other languages
English (en)
Inventor
Sharone Zehavi
Raanan Y. Zehavi
Original Assignee
Integrated Photovoltaic, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/272,073 external-priority patent/US20130095296A1/en
Priority claimed from US13/273,175 external-priority patent/US20130095242A1/en
Application filed by Integrated Photovoltaic, Inc. filed Critical Integrated Photovoltaic, Inc.
Publication of WO2013055921A1 publication Critical patent/WO2013055921A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Definitions

  • a device is a photovoltaic device.
  • the disclosure relates to a continuous deposition system.
  • the present technology presents an atmospheric pressure, chemical vapor deposition system for deposition of silicon based compounds.
  • Prior art in this area is found in U.S.4834020, U.S.5076207, U.S.5122391 , U.S.51 13789, U.S.5122391, U.S.5136975, U.S.5393563, U.S.5683516, U.S.5849088, U.S.5863337, U.S.5863338, U.S.5944900, U.S.6143080, U.S.6220286, U.S.6231673, U.S.6890386, U.S.20060141290, U.S.20110195207; all incorporated herein in their entirety by reference.
  • U.S.201 10195207 discloses a roll-to-roll atmospheric pressure chemical vapor deposition system for the deposition of graphene on a metal substrate comprising a grapheme forming unit comprising one or more gas nozzles and a temperature controllable heating jacket operable to a temperature between about 300°C and about 2000°C.
  • Rollers may be provided at .the inlets and outlets to assist with a "roll-to-roll' " operating mode; deposition is typically done on a metallic substrate. No provision is made for preventive maintenance or chamber replacement.
  • U.S.4834020 discloses a APCVD system having a heated muffle and conveyor belt and a deposition zone with a gas injector assembly for each deposition zone.
  • S. Reber of the Fraunhofer Institute has disclosed a high throughput deposition APCVD tool at the 24 th Eurpean PV Solar Energy Conference, 21 -25 Sept., 2009, Hamburg, Germany.
  • the Fraunhofer apparatus comprises three independent modules, each module having a double track of six 156mm by 156 mm substrates; each module is in a muffle of low-permeability graphite; each muffle heated by a graphite rod resistance heater. Each module has two consecutive reaction chambers. Chlorosilane consumption is projected at 500g/min.
  • a key feature of any processing apparatus is time spent in production versus time spent in maintenance, including cleaning.
  • a critical feature of the disclosed technology is the simplicity of design and resulting ease of performing maintenance and cleaning.
  • a critical problem with the prior art is low utilization of deposition source material and the resulting maintenance problems caused by frequent apparatus cleaning.
  • the present technology enables rapid chamber replacement and/or chamber addition by the flexibility of a immoveable central chamber 24B
  • system 100 is configured to deposit silicon and/or silicon- compounds resulting in a layer of silicon, and/or silicon carbide, optionally, on carbon foil; in some embodiments subsequent processing in a connected, or separate, deposition apparatus results in additional layers of silicon, carbon, other Group IV or Group III-V or 1I-VI materials; optionally, a recrystallization step may follow a deposition step.
  • Figure 1 is a schematic view of an embodiment of the deposition system.
  • Figure 2 is a schematic view of an embodiment of the deposition system showing separation of chambers 24 A, B and C.
  • Figure 3 is a schematic view of an embodiment of the deposition system showing detail of interface between sections 1 0 and 20.
  • a substrate material is chosen from a group comprising carbon, graphite, graphite foil, glassy graphite, impregnated graphite, pyrolytic carbon, pyrolytic carbon coated graphite, flexible foil coated with graphite, glass, ceramic and silicon.
  • a substrate is a plate, optionally about 1 50 mm square or larger; optionally a substrate is a semi-continuous sheet or tape moved through the deposition apparatus.
  • a substrate is pushed through the deposition apparatus; in some embodiments a substrate is conveyed through the deposition apparatus on a means for conveying such as a flexible tape, optionally, graphitic.
  • FIG. 1 shows schematically an embodiment of the disclosed CVD apparatus.
  • a substrate discreet or one or more semi-continuous strips, enters reactor 100 through entry portion 10.
  • Entry portion 1 0 comprises a plurality of gas curtains wherein a process gas is introduced, for example, through sections 2. 6. 1 2 and exhausted through portions 4, 8, and 14 such that a minimum purity of process gas is achieved.
  • process and deposition gases are introduced in section 14.
  • Exemplary process gases are hydrogen, nitrogen, argon, helium;
  • exemplary deposition gases are silane(s), silicon-halogen bearing compounds, si licon-halogen- carbon bearing compounds, halogen compounds, dopant gases, including diborane, phosphine. and other gases known to one knowledgeable in the art.
  • Entry portion 10 is attached to portion 20 by means for attachment 16, 18 and 19; means for attachment may comprise glass to metal seals; optionally, water cooled, and feedthroughs for gas(es), electrical and vacuum.
  • Exit portion 50 is attached in a similar manner to portion 40 wherein means for attachment 52 and 54 provide similar functionality.
  • Portion 20 of CVD system 100 comprises outer, elongated chamber 22 and inner, elongated chamber section 24A; inner chamber 24 comprises three separable sections, 24A. 24B and 24C wherein sections 24A and 24C are detachable from section 24B.
  • Coupling piece 25 enables section 24A to make contact and mate with upstream entrance of inner chamber section 24B; coupling piece 26 enables sections 24C to make contact and mate with downstream exhaust of inner chamber section 24B.
  • Coupling pieces 25 and 26 provide a non- hermetic seal for the union of 24A to 24B and 24B to 24C; coupling pieces may also comprise a high temperature gasket of carbon fiber or high temperature Kapton® or Vespel®.
  • chamber 22 is maintained at a pressure somewhat higher than chamber 24B; in some embodiments chamber 22 is maintained at a pressure somewhat lower than chamber 24B; in some embodiments chamber 22 maintains a purge gas flowing through.
  • a key design feature is the fact that chambers 24 A. B and C can be replaced quickly when preventive maintenance, such as cleaning, is required. Additionally additional process chambers can be added either between portion 30 and 40 and/or between portions 40 and 50 ; alternatively portion 30 can be extended while also extending chamber 22.
  • additional chambers may be added to enable additional processing steps such as oxidation, recrystallization and/or additional deposited layers.
  • a chamber 24A2 is added between 24A and 24B to heat a carbon substrate to a high temperature such that oxygen not purged through curtains 2, 4, 6, 8 and remaining in the process gases is reacted with a carbon based substrate.
  • a chamber 24B2 is added between 24B and 24C to heat a deposited layer above its melting point such that large grained recrystallization occurs upon cooling as disclosed in U.S.13/234,3 16.
  • Portion 30 of CVD system 100 comprises outer, elongated chamber 22, inner, elongated chamber section 24B and means for heating comprising means 32, 34, 36 and 38, all operable for continuous deposition of a thin film onto one or more substrates traversing chamber 24B from entrance to exit.
  • means for heating is circumferential about exterior of chamber 22, as shown; in some embodiments means for heating is circumferential about exterior of chamber 24B, shown in Figure 2 as 72-79; in some embodiments means for heating is a planar source exterior to chamber 22, not shown; optionally, means for heating is two planar sources exterior to chamber 22 such that two substrates may be heated; in some embodiments means for heating is a planar source exterior to chamber 22 comprising a means for focusing optical energy onto a substrate. In some cases planar source(s) may be internal to chamber 22 and external to chamber 24B.
  • Means for heating 32, 34, 36 and 38 and 72 - 79 comprise one or more means for heating chosen from a group comprising lasers. LEDs.
  • means for heating 32-38 or 72-79 are a multiplicity of independent means operable such that a temperature profile may be imposed upon a substrate in chamber 24B ranging from about 200°C or greater at the upstream entrance region to a maximum of about 1430°C and then declining to less than about 500°C at the downstream exit end; in some embodiments a means for cooling may be added to facilitate a more rapid cool down.
  • Portion 40 of apparatus 100 provides for at least radiant cooling of a substrate and a transition to exit portion 50 by means for attachment 52 and 54 comprising glass to metal seals; optionally, water cooled, and feedthroughs for gas(es), electrical and vacuum.
  • Portion 50 comprises a process gas exhaust 1 3 and a plurality of gas curtains 3, 7. 1 1 and exhausts 9 and 5.
  • portions 10 and 20 of CVD system 100 are detachable from portion 30 by withdrawing chamber 24A from coupling section 25; external brackets, not shown, may assist in maintaining chamber 24A inserted in coupling piece 25 and in proximity to chamber 24B. Similarly portion 24C can be withdrawn from coupling piece 26 and chamber 24B.
  • a thin film of silicon is deposited onto a carbonaceous substrate and subsequently converted to SiC. optionally in chamber 24B, 24B2 or chamber 24C or chamber external to apparatus 100.
  • a thin film of silicon and carbon is deposited on a substrate as SiC.
  • a thin film of carbon is deposited and reacts with a silicon based or coated substrate; optionally, converted to SiC in chamber 24B or a subsequent chamber.
  • a thin film of sil icon is deposited onto a silicon based substrate.
  • Figure 2 Shows chambers 24A and 24C separated from chamber 24B in preparation for chamber cleaning or replacement or additional chambers to be installed.
  • Means for heating, 72- 79 is shown about chamber 24B.
  • Means for heating may be attached to chamber 24B in a circumferential manner or as planar elements covering the top and bottom.
  • FIG. 3 shows the detail of interface portion between portion 1 0 and 20.
  • Chamber 22 is secured through interface plate 1 9 to plate 1 8; plate 1 8 is attached to interface plate 16 which also interfaces with chamber 24A.
  • deposition system 100 operates in a horizontal mode for processing rigid substrates or a single flexible, semi-continuous substrate.
  • deposition system 1 00 is operable in a vertical mode for processing a single flexible, semi-continuous substrate or more than one flexible, semi-continuous substrates.
  • gas curtain supplies 2, 6, 12, 1 1 , 7, 3, gas curtain exhausts 4, 8, 9. 5 and process gas supply 14 and process gas exhaust 13 may be duplicated such that a set of supplies and exhausts is dedicated for each continuous substrate.
  • deposition system 100 is operable as a hot-wall CVD reactor wherein first means for heating 32, 34, 36 and 38 are located external to chamber 22; optionally, a second or alternate means for heating 72. 73, 74, 75. 76, 77. 78. 79 is located external to chamber 24B of Figure 2.
  • a second means for heating comprise one or more from a group comprising lasers, LEDs, lamps, flash lamps, halogen lamps, radiant sources, resistant sources, RF, microwave, IR sources and others known to one knowledgeable in the art.
  • deposition system 1 00 is operable as a cold-wal l CVD reactor wherein first means for heating 32, 34, 36 and 38 are located external to chamber 22; optionally, second or alternate means for heating 72, 73, 74, 75. 76, 77. 78. 79 are located external to chamber 24B of Figure 2.
  • first and/or second means for heating may be radiative heaters, such as lamps or lasers; optionally, a RF inductive type or microwave or IR source may be used; chambers 24A, B and C may be of quartz or other transmissive material.
  • the composition of chambers 24A. 24B and 24C are not the same; exemplary chamber materials for chamber 22 and 24 are silicon, Pyrex, glass, quartz, carbon, graphite, SiC, AI2O3, a high temperature metal, or other material known to one knowledgeable in the art.
  • chamber 24B and optionally, chambers 24B2. 24B3, 24B4 are operable to deposit a first layer, optionally. SiC, and a second layer, optionally. Si, and a recrystallization step wherein the recrystallization step has at least two temperature zones, a first zone above 1410°C and a second zone below 1 410°C and above 1200°C, the portion of the substrate and deposited layers being in the second zone more than 0.5 seconds.
  • a method for forming a substantially continuous layer of silicon carbide between a carbon based substrate and a silicon layer comprises the steps selecting a carbon based substrate; depositing a first layer consisting of carbon and silicon of a first carbon/silicon ratio; optionally, the C/Si ratio may be zero; depositing the silicon layer consisting substantially of silicon; and recrystallizing at least a portion of the deposited silicon layer such that the mean lateral dimension of the recrystallized grains is greater than about 5mm, optionally greater than about 10mm; optionally, the recrystallization step is as described in U.S. 1 3/234.31 6; optionally, the deposited silicon layer is recrystallized such that the second layer is held at temperature above 1 200°C and below 1410°C for longer than 5 seconds during the recrystallization.
  • a method of recrystallizing a layer of material comprises the steps: selecting a composite substrate with the layer deposited onto the substrate; advancing the substrate through first zone, S, such that a temperature, T . is established within at least a portion of the deposited layer wherein Ts is less than the melting point, TMP, of the layer; advancing the substrate through second zone, I, such that a temperature, T
  • R such that a temperature, TR, is established within at least a portion of the deposited layer wherein TR is below T MP , of the deposited layer and above a predetermined temperature.
  • TR a temperature
  • the second zone comprises one or more means for heating chosen from a group consisting of a spot of radiation rapidly scanned over the substrate, a linear array of radiation projected onto the substrate, laser, flash lamp, resistance heaters, rf coils, microwave radiation, and infra-red heaters;
  • the first and third zones comprise one or more means for temperature modulation chosen from a group consisting of a spot of radiation rapidly scanned over the substrate, a linear array of radiation projected onto the substrate, laser, flash lamp, resistance heaters, rf coils, microwave radiation, infra-red heaters and means for cooling comprising refrigeration coils, thermoelectric means, fans, and cooling coils;
  • the deposited layer material is substantially one or more elements chosen from a group consisting of Group II. III.
  • a solid state device comprises a composite substrate; and a first layer comprising material recrystallized by the method of U.S.13/234,3 16; optionally, the first layer comprises material recrystallized such that more than 90% of the recrystallized layer has crystal grains of a size greater than 3mm in any lateral dimension parallel to the substrate surface; optionally, the first layer comprises material recrystallized such that more than 90% of the recrystallized semiconductor layer has crystal grains of a size greater than 50% of the smallest lateral dimension parallel to the substrate surface; optionally, the recombination velocity is between about 50 cm/s and about 500 cm/sec; optionally, a solid state device is a solar cell wherein the recrystallized layer comprises a crystal grain at least 90% of the size of the irradiated area of the solar cell or at least 90% of the size of an individual cell in a large area solar module; optionally, the composite substrate is chosen from a group consisting of silicon, silicon composite with graphite, glass, ceramic,
  • a solid state device further comprises a barrier layer within the composite substrate and the first layer.
  • a solar cell with a composite substrate and recrystallized layer has a conversion efficiency greater than 10%; optionally, greater than 12%.
  • a composite substrate is one disclosed in U.S.
  • first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first layer could be termed a second layer, and, similarly, a second layer could be termed a first layer, without departing from the scope of the present technology.
  • Embodiments of the technology are described herein with reference to cross-section illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the technology. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the technology should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the technology.
  • An apparatus for depositing a layer on a substrate by chemical vapor deposition comprising:
  • a second portion comprising a first chamber and a second chamber interior to the first chamber
  • a third portion comprising a means for heating operable to impose a temperature profile of predetermined variation along a portion of the second chamber;
  • the second portion connects the first portion to the third portion and the fourth portion connects the third portion to the fifth portion and wherein the second chamber comprises a first section, a second section and a third section such that the first section is detachable from the second section and the third section is detachable from the second section and the second section is operable to deposit the layer on the substrate.
  • the apparatus of Concept 1 further comprising a means for heating located proximate and exterior the second section of the second chamber operable to impose a predetermined temperature profile on the substrate wherein the temperature profile may vary between about 200oC and about 1430oC along the second section of the second chamber.
  • the substrate is chosen from a group consisting of carbon, graphite, graphite foil, glassy graphite, impregnated graphite, pyrolytic carbon, pyrolytic carbon coated graphite, flexible foil coated with graphite, glass, ceramic and silicon.
  • Concept 6 The apparatus of Concept 1 wherein the substrate is first and second flexible substrates moving in tandem through the apparatus and chosen from a group consisting of carbon, graphite, graphite foil, glassy graphite, impregnated graphite, pyrolytic carbon, pyrolytic carbon coated graphite, flexible foil coated with graphite, glass, ceramic and silicon.
  • the layer thickness is between about 0.1 microns and about 100 microns.
  • the layer thickness is between about 0.1 microns and about 100 microns. recrystallizing at least a portion of the second layer such that the mean lateral dimension of the recrystallized grains is greater than about 10 mm.
  • An apparatus for depositing a layer on a substrate by chemical vapor deposition comprising:
  • a second portion comprising a first chamber and a second chamber interior to the first chamber wherein the first chamber and the second chamber are maintained at about ⁇ 5 psig of atmospheric pressure;
  • a third portion comprising a means for heating operable to impose a temperature profile of predetermined variation along a portion of the second chamber;
  • the second portion connects the first portion to the third portion and the fourth portion connects the third portion to the fifth portion and wherein the second chamber comprises a first section, a second section and a third section such that the first section is detachable from the second section and the third section is detachable from the second section and wherein the second section comprises a first part and a second part such that the first part is operable to deposit at least one layer on the substrate and the second part is operable to recrystallize at least a portion of the deposited layer such that the deposited layer is held at temperature above 1 200oC and below H l OoC for longer than 1 second during the recrystallization.
  • An apparatus for depositing layers on a substrate by chemical vapor deposition comprising: a first portion for establishing a desired atmosphere about a substrate;
  • a second portion comprising a first chamber and a second chamber interior to the first chamber
  • a third portion comprising a means for heating operable to impose a temperature profile of predetermined variation along a portion of the second chamber;
  • the second portion connects the first portion to the third portion and the fourth portion connects the third portion to the fifth portion and wherein the second chamber comprises a first section, a second section and a third section such that the first section is detachable from the second section and the third section is detachable from the second section and the second section is operable to establish a first and second deposition zone and a first and second temperature zone for recrystallization such that a first layer of SiC is deposited in the first deposition zone and a second layer of Si is deposited in the second deposition zone wherein the first temperature zone for recrystallization is maintained above 141 OoC and a second temperature zone for recrystallization is maintained between less than 141 OoC and above ! 200oC, such that the substrate and deposited layers are in the second temperature zone more than 0.5 seconds.

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un procédé et un système pour déposer des films minces par réaction chimique en phase vapeur afin de fabriquer des dispositifs à semi-conducteurs; dans certains modes de réalisation, le dispositif est un dispositif photovoltaïque.
PCT/US2012/059755 2011-10-12 2012-10-11 Système de dépôt WO2013055921A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US13/272,073 2011-10-12
US13/272,073 US20130095296A1 (en) 2011-10-12 2011-10-12 Photovoltaic Substrate
US13/273,175 US20130095242A1 (en) 2011-10-13 2011-10-13 Continuous Deposition System
US13/273,175 2011-10-13

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WO2013055921A1 true WO2013055921A1 (fr) 2013-04-18

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PCT/US2012/059755 WO2013055921A1 (fr) 2011-10-12 2012-10-11 Système de dépôt

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1306988A (en) * 1969-11-18 1973-02-14 Siemens Ag Reaction vessels for the preparation of semiconductor devices
WO1996023914A1 (fr) * 1995-01-31 1996-08-08 Abb Research Ltd. Dispositif de protection thermique lorsque sic est etire par d.c.p.v. (depot chimique en phase vapeur)
RU2162117C2 (ru) * 1999-01-21 2001-01-20 Макаров Юрий Николаевич Способ эпитаксиального выращивания карбида кремния и реактор для его осуществления
RU2421544C2 (ru) * 2006-04-25 2011-06-20 Месье-Бугатти Технологическая печь или подобное оборудование

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4443653A (en) * 1980-10-24 1984-04-17 The University Of Delaware Thin film photovoltaic device with multilayer substrate
JP4182323B2 (ja) * 2002-02-27 2008-11-19 ソニー株式会社 複合基板、基板製造方法
US20070170528A1 (en) * 2006-01-20 2007-07-26 Aaron Partridge Wafer encapsulated microelectromechanical structure and method of manufacturing same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1306988A (en) * 1969-11-18 1973-02-14 Siemens Ag Reaction vessels for the preparation of semiconductor devices
WO1996023914A1 (fr) * 1995-01-31 1996-08-08 Abb Research Ltd. Dispositif de protection thermique lorsque sic est etire par d.c.p.v. (depot chimique en phase vapeur)
RU2162117C2 (ru) * 1999-01-21 2001-01-20 Макаров Юрий Николаевич Способ эпитаксиального выращивания карбида кремния и реактор для его осуществления
RU2421544C2 (ru) * 2006-04-25 2011-06-20 Месье-Бугатти Технологическая печь или подобное оборудование

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