WO1996023914A1 - Dispositif de protection thermique lorsque sic est etire par d.c.p.v. (depot chimique en phase vapeur) - Google Patents

Dispositif de protection thermique lorsque sic est etire par d.c.p.v. (depot chimique en phase vapeur) Download PDF

Info

Publication number
WO1996023914A1
WO1996023914A1 PCT/SE1996/000070 SE9600070W WO9623914A1 WO 1996023914 A1 WO1996023914 A1 WO 1996023914A1 SE 9600070 W SE9600070 W SE 9600070W WO 9623914 A1 WO9623914 A1 WO 9623914A1
Authority
WO
WIPO (PCT)
Prior art keywords
susceptor
tube
substrate
film
gas
Prior art date
Application number
PCT/SE1996/000070
Other languages
English (en)
Inventor
Nils Nordell
Gunnar Andersson
Original Assignee
Abb Research Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd. filed Critical Abb Research Ltd.
Publication of WO1996023914A1 publication Critical patent/WO1996023914A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Definitions

  • the present invention relates to a device for shielding the environ ⁇ ment against the heat produced when SiC is epitaxially grown by Chemical Vapour Deposition on a substrate while using a susceptor heated for heating the substrate and a gas mixture fed to the sub- strate for the growth, said device comprising a tube defining a room arranged to receive the susceptor and the substrate.
  • SiC single crystals are in particular grown for being used in different types of semiconductor devices, such as for example different types of diodes, transistors and thyristors, which are intended for applica ⁇ tions in which it is possible to benefit from the superior properties of SiC in comparison with especially Si, namely the capability of SiC to function well under extreme conditions.
  • SiC has a high thermal stability due to a large band gap between the valence band and the conduction band, such that devices fabricated from said material are able to operate at high temperatures, namely up to 1000K.
  • the high thermal stability of SiC also means that high temperatures are needed for obtaining a good ordered growth thereof.
  • the epitaxial growth of silicon carbide by Chemical Vapour Deposition is therefore carried out in a temperature regime in ex ⁇ cess of 1400°C. These high temperatures are needed both to obtain decomposition by cracking of the Si- and C-containing precursor gases of said gas mixture and to ensure that the atoms are depos- ited on the substrate surface in a good order.
  • These high tempera ⁇ tures in a reactor for Chemical Vapour Deposition of SiC also means problems with shielding the environment, primarily the walls of a vacuum casing in which the growth takes place and other sur ⁇ rounding equipment, against the heat emanating from the susceptor.
  • the graphite felt is selected as material for the tube since it is comparatively free from impurities, it is easily available, it shields the heat very well and it is permeable to Rf-field radiation, which is of importance, since the susceptor is mostly heated by a Rf-coil lo ⁇ cated outside the reactor casing.
  • the graphite felt is porous and it may raise dust because particles thereof may be torn away and if they land on the substrate they will cause severe defects of the crystal grown thereon, and said felt does also attract impurities from said gas mixture which may later on be released and incorporated into the epitaxially layers of the SiC crystal grown and by that cause so called "memory ef ⁇ fects" thereof.
  • the object of the present invention is to provide a device as defined in the introduction, which makes it possible to shield the environ ⁇ ment against said heat just as well or even better than when using a tube of graphite felt in such a device, but through which a remedy is find to the inconveniences associated with the use of graphite felt as material for said tube.
  • This object is in accordance with the invention obtained by provid ⁇ ing said device with a tube having the inner walls at least close to the susceptor coated by a thin heat-reflecting film. It has been found that such a thin heat-reflecting film will reflect the heat coming from the susceptor back in the direction of the susceptor, so that it may be used for heating the substrate and said gas mixture and less heat causing problems with cooling has to be supplied to the susceptor, which means that a surrounding casing and other equip ⁇ ment does not get too hot.
  • said film is a carbon film. It has been found that a thin carbon film is well suited as the thin heat-reflecting film with the object of the invention.
  • a carbon film reflects the heat coming from the susceptor very effi ⁇ ciently, so that the temperature on the external side of the film will be several hundred °C lower than the temperature of the susceptor.
  • said tube is made of quarts internally coated by said film.
  • quartz may be used as material for the tube, which is a desired material for the tube, since quartz may be easily flushed free from impurities by flushing gases and is also permeable to Rf-field radiation, so that Rf-filed radiating means may be used for heating the susceptor.
  • Quartz can not stand temperatures above 1300 ⁇ C, which should be compared with temperatures of 1500-1700°C mostly used for said epitaxial growth, but thanks to the application of said thin film, the temperature of the tube may be held below that upper limit for quartz.
  • a carbon film on the tube of quartz will result in a temperature of only 1250°C at the external side of the film, when the susceptor temperature is 1550°C.
  • said film has a thickness of 2-10 ⁇ m.
  • a film, preferably a carbon film, having a thickness within this interval has turned out to be most suitable, since an even thinner film will not reflect that good and a thicker film will be pealed off from the tube.
  • the carbon film may in accordance with the invention be applied to the inside of a tube to be used for defining a room arranged to re ⁇ ceive a susceptor and a substrate in a device for epitaxially growing SiC by Chemical Vapour Deposition by introducing a C-containing gas into the tube and heating said gas until cracking thereof for deposition of carbon atoms as an even layer on the internal wall of the tube.
  • This method gives rise to a very even black metal-like high-reflecting layer of carbon on the inside of the tube. It is advan- tageous to use methane gas as the C-containing gas.
  • Another object of the invention is to provide a method for shielding the environment against the heat produced when SiC is epitaxially grown by Chemical Vapour Deposition on a substrate while using a susceptor heated for heating the substrate and a gas mixture fed to the substrate for the growth, said substrate and susceptor being enclosed in a casing.
  • This object is in accordance with the invention obtained by flushing the casing with Ar-gas acting as a shield against transferral of heat from said susceptor to the casing through the gas located therebetween.
  • argon gas as flushing gas when SiC is grown by Chemical Vapour Deposition the very low thermal conductivity of argon leads to a better protecting of pri ⁇ marily the casing material than in the prior art methods, which have primarily used hydrogen gas as flushing gas.
  • Fig 1 is a simplified longitudinal cross-section view of a reactor for epitaxial growth of SiC by Chemical Vapour Deposition including a device according to a preferred embodiment of the invention and
  • Fig 2 is a cross-section according to A-A in Fig 1 of the reactor according to Fig 1 , in which some further unimportant details are omitted.
  • a reactor 1 for epitaxially growing SiC by Chemical Vapour Depo- sition is schematically shown in Fig 1 for explaining the principals of the invention.
  • the reactor 1 comprises a casing 2 constituted by an outer tube 3 of quartz and end flanges 4 and 5 of stainless steel.
  • the casing 2 delimits an inner volume in which vacuum is created by pumps not shown.
  • the reactor further comprises an inner cell 6 of graphite in the form of a tube extending in the longitudinal direc ⁇ tion of the outer tube 3.
  • a gas mixture of C- and Si-containing gases and a H2 carrier gas will be fed to the inner cell 6 through a conduit 7 penetrating the end flange 5.
  • the inner cell 6 has a rectangular cross-section with a compara ⁇ tively small height, as seen in Fig 2, and a part of the bottom of the inner cell is formed by a susceptor 8 of graphite hanging in the inner cell.
  • the susceptor 8 is arranged to receive a substrate 9 thereon for epitaxial growth of layers of SiC thereon.
  • the substrate 9 may for instance be crystalline SiC, Si or any Group Ill-nitride.
  • the reactor does also comprise a heating means 10 in the form of a Rf- field radiating coil arranged outside the casing 2 in the region of the susceptor and arranged to heat the susceptor by the Rf-field radiated thereby.
  • the susceptor 8 is furthermore preferably coated by SiC, at least close to the substrate 9, for preventing impurities in the graphite of the susceptor from being released into the inner cell and be incorporated into the epi ⁇ taxial layers of the substrate.
  • the inner cell surfaces close to the susceptor are preferably also coated by SiC for the same reason.
  • the inner cell 6 is suspended in the casing by rods 11 of quartz or aluminium oxide, and it is made of two parts 12, 13 connectable to and removable from each other, so that the part 12 containing the susceptor (to the left in Fig 1) may be removed from the casing 2 after removal of the end flange 4 for checking the SiC crystal grown, replacing said SiC crystal by a new substrate, checking the state of the susceptor and so on. A susceptor may then also be removed from the inner cell for replacement or conditioning.
  • the reactor also comprises a tube 14 of quartz with a somewhat smaller diameter than the outer tube 3 and which in a room 22 defined thereby receives the inner cell and the susceptor.
  • the inner tube 14 bears on the bottom of the outer tube 3.
  • the tube 14 is internally coated by a thin carbon film 15 with a thickness of 2-10 ⁇ m.
  • This carbon film is highly heat-reflecting and have a metal-like lustrous character. It is created by introducing a C-containing gas, preferably methane gas, into the tube and heating said gas at a temperature of 1150-1250°C, so that the molecules of the gas are cracked and carbon atoms are deposited as an even layer on the internal wall of the tube. This is accordingly a process for manufac- turing the tube 14.
  • the C-containing gas does hardly crack at a lower heating temperature than 1 150°C and the quartz may be damaged if the temperature exceeds 1250°C. Thanks to the fact that the tube is made of quartz and the carbon film is thin, it will be permeable to the Rf-field emitted by the heating means 10.
  • the reactor also comprises two graphite plates 16 arranged on both sides of the susceptor 8 for reflecting heat radiated by the susceptor back towards the susceptor as well as a graphite plate 17 deviding the inner tube 14 into two parts and arranged to reflect heat coming primarily from the susceptor and the walls of the inner cell back.
  • the reactor also comprises means indicated at 18 for supplying a flushing stream of Ar-gas to the casing, which is intended to flow through the casing and leave this in a tube 19 connected to a pump not shown.
  • the Ar-gas is intended to flush the walls of the inner 16 and outer 3 tube of quartz for removing impurities thereon.
  • quartz The main reason for choosing quartz as a material for these tubes is exactly that impurities deposited thereon may very easily be flushed away. It has also been found that the Ar-gas has a not neglectible heat shielding effect, since argon has a very low thermal conductivity.
  • the argon gas flows in a small gap 23 between the susceptor and the inner tube 14 and reduces the heat transferral from the susceptor to the inner surface of the tube 14 through the gas therebetween.
  • the argon gas also reduces such heat transferral to other parts of the tube 14.
  • the reactor has also a window 20 making it possible to determine the temperature in the susceptor 8 by looking at a bore drilled in the susceptor and measuring the radiation from such an "ideal" black body.
  • the reactor is used to grow films with a thickness of 1-50 ⁇ m for the use in primarily high power semiconductor devices and is as fol ⁇ lows: a gas mixture of C- and Si-containing precursor gases, for instances propane and silane, and a carrier gas, preferably H2, is introduced into the conduit 7 and drawn through the inner cell 6.
  • a diffuser means not shown is arranged in the transition between the conduit 7 and the inner cell 6 so as to prevent the formation of a central jet inside the inner cell 6.
  • the heating means 10 heats the susceptor 8 and by that the substrate 9 and the gas mixture passing closely above the susceptor and the substrate to a temperature of preferably 1500-1600°C, so that the precursor gases are cracked and the Si- and C-atoms so formed are deposited onto the substrate 9 while forming well ordered epitaxial layers thereon.
  • the substrate 9 is placed downstreams of the longitudinal middle of the susceptor 8, so that the precursor gases of the gas mixture will reach a tem ⁇ perature resulting in cracking thereof before or when they reach the region of the substrate 9.
  • the comparatively low height of the inner cell 6 make the gases pass closely above the susceptor and the substrate and facilitates the heating of the gas mixture, so that the epitaxial growth of SiC on the substrate 9 is promoted.
  • the heat radiated by the susceptor 8 will reach the tube 14, which in particularly close to the susceptor, namely in the region thereun ⁇ der, will receive comparatively much thermal energy per time- and surface-unit.
  • the carbon film 15 of the tube 14 will reflect said heat back towards the susceptor and the inner cell, so that there will be a temperature fall through said film 15 and it will on the outer side thereof only have a temperature of less than 1250°C, which will be of no problem to the quartz material of the tube 14.
  • the arrangement of said thin carbon film will result in a lower heat supply from the heating means 10 thanks to the reflection of the heat back towards the regions of the inner cell to be heated, so that the temperature of the tube 14 and the casing 2 will be lower than otherwise without any need of any cooling by cooling fluids or the like.
  • This does also make it possible to use quartz as material for the tube 14 and for the casing 2 without any need of additional cooling means.
  • the carrier gas of the gas mixture and remaining parts of the pre ⁇ cursor gases and products of the cracking thereof will leave the inner cell through an opening 21 thereof near its end and through the tube 19.
  • the inner cell 6 Apart from this opening 21 the inner cell 6 will be sealed with respect to the rest of the casing.
  • the heat shielding tube may be made of another material than quartz onto which a thin heat-reflecting film will be possible to be deposited, and this material may also be impermeable to Rf-field radiation, although that will complicate the heating of the susceptor.
  • said heat shielding tube does not have to extend so far upstreams and downstreams of the susceptor as shown in Fig 1 , but the extension thereof may be adapted to the actual conditions in the reactor in question.
  • the environment in the claims has to be interpreted very broadly and comprises all types of equipment, walls and the like arranged near the susceptor and which by that may be exerted to heat deriv ⁇ ing therefrom.
  • casing in the claims includes all types of elements having walls enclosing the susceptor and the substrate, such as the inner tube described above.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention se rapporte à un dispositif de protection de l'environnement contre la chaleur produite lorsque SiC est étiré épitaxialement par dépôt chimique en phase vapeur sur un substrat (9). Pour cela, on utilise un suscepteur (8) chauffé pour chauffer le substrat et un mélange gazeux amené sur le substrat pour la croissance épitaxiale. Ce dispositif comprend un tube formant une chambre (22) conçue pour recevoir le suscepteur et le substrat. Les parois internes d'un tube sont proches du suscepteur (8) revêtu d'un film mince réfléchissant la chaleur (15), de préférence un film de carbone. Ce film peut être appliqué à l'intérieur du tube par introduction d'un gaz contenant C chauffé jusqu'au craquage. Renfermer le substrat et le suscepteur dans une gaine (2, 14) et rincer la gaine avec du gaz Ar est une autre façon de protéger l'environnement contre la chaleur produite par le processus D.P.C.V.
PCT/SE1996/000070 1995-01-31 1996-01-24 Dispositif de protection thermique lorsque sic est etire par d.c.p.v. (depot chimique en phase vapeur) WO1996023914A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9500325-7 1995-01-31
SE9500325A SE9500325D0 (sv) 1995-01-31 1995-01-31 Device for heat shielding when SiC is grown by CVD

Publications (1)

Publication Number Publication Date
WO1996023914A1 true WO1996023914A1 (fr) 1996-08-08

Family

ID=20397014

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SE1996/000070 WO1996023914A1 (fr) 1995-01-31 1996-01-24 Dispositif de protection thermique lorsque sic est etire par d.c.p.v. (depot chimique en phase vapeur)

Country Status (2)

Country Link
SE (1) SE9500325D0 (fr)
WO (1) WO1996023914A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001014619A1 (fr) * 1999-08-24 2001-03-01 Aixtron Ag Procede et dispositif pour deposer des materiaux presentant un grand ecart energetique electronique et une grande energie de liaison
WO2013055921A1 (fr) * 2011-10-12 2013-04-18 Integrated Photovoltaic, Inc. Système de dépôt
CN104291339A (zh) * 2014-09-29 2015-01-21 浙江大学 一种超薄碳化硅材料的制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1134133A (en) * 1965-02-24 1968-11-20 Quartz And Silice Drawing quartz fibres and coating with carbon
US3845738A (en) * 1973-09-12 1974-11-05 Rca Corp Vapor deposition apparatus with pyrolytic graphite heat shield
EP0045192A2 (fr) * 1980-07-28 1982-02-03 Monsanto Company Procédé et appareil pour préparer des objets en matériau semiconducteur
EP0147967A2 (fr) * 1983-12-09 1985-07-10 Applied Materials, Inc. Réacteur chauffé par induction pour des dépôts chimiques à partir de la phase vapeur
EP0269439A2 (fr) * 1986-11-27 1988-06-01 Sharp Kabushiki Kaisha Procédé de croissance hétéroépitaxiale
EP0446988A1 (fr) * 1990-03-09 1991-09-18 ENIRICERCHE S.p.A. Revêtements en carbure de silicium

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1134133A (en) * 1965-02-24 1968-11-20 Quartz And Silice Drawing quartz fibres and coating with carbon
US3845738A (en) * 1973-09-12 1974-11-05 Rca Corp Vapor deposition apparatus with pyrolytic graphite heat shield
EP0045192A2 (fr) * 1980-07-28 1982-02-03 Monsanto Company Procédé et appareil pour préparer des objets en matériau semiconducteur
EP0147967A2 (fr) * 1983-12-09 1985-07-10 Applied Materials, Inc. Réacteur chauffé par induction pour des dépôts chimiques à partir de la phase vapeur
EP0269439A2 (fr) * 1986-11-27 1988-06-01 Sharp Kabushiki Kaisha Procédé de croissance hétéroépitaxiale
EP0446988A1 (fr) * 1990-03-09 1991-09-18 ENIRICERCHE S.p.A. Revêtements en carbure de silicium

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001014619A1 (fr) * 1999-08-24 2001-03-01 Aixtron Ag Procede et dispositif pour deposer des materiaux presentant un grand ecart energetique electronique et une grande energie de liaison
WO2013055921A1 (fr) * 2011-10-12 2013-04-18 Integrated Photovoltaic, Inc. Système de dépôt
CN104291339A (zh) * 2014-09-29 2015-01-21 浙江大学 一种超薄碳化硅材料的制备方法

Also Published As

Publication number Publication date
SE9500325D0 (sv) 1995-01-31

Similar Documents

Publication Publication Date Title
US5879462A (en) Device for heat treatment of objects and a method for producing a susceptor
JP4002604B2 (ja) Ｃｖｄによるエピタキシャル成長中にサセプターを保護する方法と装置
US8329252B2 (en) Method for the growth of SiC, by chemical vapor deposition, using precursors in modified cold-wall reactor
EP0835336B2 (fr) Dispositif et procede de croissance epitaxiale d'objets a l'aide d'un depot chimique en phase vapeur
US6093253A (en) Method and a device for epitaxial growth of objects by chemical vapor deposition
JP4587640B2 (ja) 結晶層堆積装置および結晶層堆積方法
EP1218572B1 (fr) Procede et appareil de tirage de cristaux de carbure de silicium
EP0859879B1 (fr) Procede de croissance epitaxiale d'objets et dispositif permettant de realiser cette croissance
US5954881A (en) Ceiling arrangement for an epitaxial growth reactor
WO2008014434A2 (fr) Procédé de croissance cristalline et modèle de réacteur
KR20120067944A (ko) 탄화규소 단결정 제조 장치
Dhanaraj et al. Epitaxial growth and characterization of silicon carbide films
US7901508B2 (en) Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
Lee et al. MOCVD in inverted stagnation point flow: I. Deposition of GaAs from TMAs and TMGa
US5759263A (en) Device and a method for epitaxially growing objects by cvd
EP1060301B1 (fr) Systeme de plafond pour reacteur de croissance epitaxiale
CN112853479B (zh) 一种单晶生长装置
WO1996023914A1 (fr) Dispositif de protection thermique lorsque sic est etire par d.c.p.v. (depot chimique en phase vapeur)
TW483053B (en) Chemical vapor deposition apparatus and chemical vapor deposition process
JPH09245957A (ja) 高周波誘導加熱炉
WO1996023912A1 (fr) DISPOSITIF UTILISE POUR LA CROISSANCE EPITAXIALE DE SiC PAR DEPOT CHIMIQUE EN PHASE VAPEUR
Dua et al. Large area diamond deposition in HFCVD technique employing convective flow of gases
JPH11513352A (ja) 物体をエピタキシャル成長させる方法及びそのような成長のための装置
JP4744652B2 (ja) 対象物の熱処理装置とサセプタの製造法
JP4771591B2 (ja) 化学気相成長による物体のエピタキシアル成長方法及び装置

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase