WO2013055013A1 - Led 패키지 - Google Patents
Led 패키지 Download PDFInfo
- Publication number
- WO2013055013A1 WO2013055013A1 PCT/KR2012/005390 KR2012005390W WO2013055013A1 WO 2013055013 A1 WO2013055013 A1 WO 2013055013A1 KR 2012005390 W KR2012005390 W KR 2012005390W WO 2013055013 A1 WO2013055013 A1 WO 2013055013A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal substrate
- led
- chip
- led package
- molding
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 81
- 239000002184 metal Substances 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 238000000465 moulding Methods 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims description 22
- 229920006336 epoxy molding compound Polymers 0.000 claims description 12
- 230000000903 blocking effect Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000004080 punching Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000002952 polymeric resin Substances 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000004383 yellowing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Definitions
- the present invention relates to an LED package, and more particularly, to an LED package in which an LED chip is directly mounted on a metal substrate to improve heat dissipation efficiency.
- a light emitting diode is a type of diode that emits light when a current flows through a pn junction of a semiconductor
- gallium arsenide is light emitting used for infrared rays.
- GaAlAs gallium arsenide
- GaAsP gallium arsenide
- GaP gallium phosphide
- GaN Light emitting diodes used for yellow and gallium nitrite (GaN) are known as white light emitting diodes that emit white light by mixing phosphors containing Cr ⁇ Tm ⁇ Tb as rare earth materials as active ions.
- LEDs can be classified into lamp type LEDs and surface mount type LEDs, which are formed by forming two lead frames (metal electrodes) on the upper side of a substrate. The chip is mounted and a resin is molded on the outside thereof so that a lens is formed. There is a problem in that the thermal resistance is large and the heat dissipation is difficult to be utilized for high output.
- a surface-mount LED is a lens formed by bonding an LED chip on a substrate formed of a ceramic or a printed circuit board and molding a resin on the top of the LED, which can easily dissipate heat generated from the LED chip compared to a lamp type. As the brightness and brightness are improved, it is widely used in various fields such as color display boards and lighting devices.
- the substrate is formed of a metal material, and the LED chips have been developed.
- the insulating layer is formed on the upper surface of the metal substrate in order to prevent the mounting, the LED chip is mounted through a circuit pattern formed on the insulating layer, and the electrical connection is made through wire bonding.
- the insulation layer formed on the metal substrate has a poor thermal conductivity, so that even when a metal substrate is used, the thermal conductivity efficiency is inevitably lowered.
- the LED chip which is a kind of semiconductor device, may have a yellowing phenomenon due to a change in emission wavelength or a decrease in light emission efficiency.
- the lifespan can be shortened so that the heat dissipation structure of the heat generated from the LED chip can be improved.
- the present invention has been made to solve the above-mentioned disadvantages and problems in the conventional LED package, a portion of the metal substrate is cut to form a positive terminal and a negative terminal, the LED chip is directly mounted on the metal substrate to radiate heat It is an object of the invention to provide an LED package that allows for improved efficiency.
- another object of the present invention is to mount the LED chip on the metal substrate and to be formed at the same time the lens portion and the molding portion when forming the molding portion, the manufacturing process can be simplified to reduce the manufacturing cost, the lens characteristics An LED package is provided that is intended to be enhanced.
- a portion of the metal substrate is formed by cutting both the positive terminal and the negative terminal; An LED chip mounted on an upper surface of a central portion of the metal substrate; And a molding part encapsulated on the metal substrate to seal the LED chip and integrally formed with a lens part protruding from an upper surface of a central part thereof.
- the metal substrate is provided with a lead frame at an outer portion, and is formed of a plate-shaped chip mounting portion therein, and the positive terminal and the negative terminal electrically shorted to the chip mounting portion by a cutout at a corner portion of the lead frame. Can be formed.
- the positive terminal and the negative terminal are electrically connected to the LED chip by wire bonding.
- the molding part is encapsulated with the upper surface of the metal substrate and the LED chip by using a transparent epoxy molding compound (EMC), wherein the lens part is formed simultaneously with the molding part and integrally formed.
- EMC transparent epoxy molding compound
- a light blocking film is provided on each side of the molding part, and the light blocking film is formed in close contact with a predetermined thickness on the side of the molding part and is a black-based EMC that can absorb or reflect light emitted from the LED chip. Can be configured.
- one or more LED chips may be mounted on the metal substrate.
- the metal substrate may have a cavity formed in the LED chip mounting region to allow the LED chip to be seated on the bottom surface of the cavity, and a reflective member may be formed on the wall of the cavity to form a reflective surface of light emitted from the LED chip.
- the coupling force of the molding part may be enhanced by forming grooves or grooves at regular intervals on the lead frame constituting the edge of the metal substrate.
- the LED package of the present invention has the advantage of improving the heat dissipation efficiency of the LED chip as the LED chip is mounted directly on a metal substrate and the heat dissipation efficiency of the LED chip is improved. By minimizing thermal deformation, the effect of yellowing can be prevented.
- the present invention has the advantage of reducing the production cost by simplifying the manufacturing process by simultaneously forming the lens unit integrally formed with the resin of the same material when forming the molding portion on the metal substrate.
- the present invention has the advantage that the cavity is formed in the chip mounting portion of the metal substrate, and as the LED chip is mounted on the bottom thereof, the light irradiation efficiency can be improved.
- FIG. 1 is a cross-sectional view of an LED package according to the present invention.
- FIG. 2 is a plan view of an LED package according to the present invention.
- FIG. 3 is a cross-sectional view of another embodiment of an LED package according to the present invention.
- FIG. 4 is a plan view of another embodiment according to the present invention.
- FIG. 5 is a cross-sectional view of an LED package of another embodiment according to the present invention.
- 6 to 10 is a process diagram showing the manufacturing process of the LED package according to the present invention.
- FIG. 1 is a cross-sectional view of an LED package according to the present invention
- Figure 2 is a plan view of the LED package according to the present invention.
- the LED package 100 is a metal substrate 110 having a positive terminal 111 and a negative terminal 112, and the LED chip 120 mounted on the metal substrate 110. And a molding part 130 encapsulated on the metal substrate 110 and a lens part 140 formed integrally with the molding part 130.
- the metal substrate 110 may be formed of a plate-shaped body in which a portion of the lead frame 113 is cut by being composed of an outer lead frame 113 and a chip mounting part 114 inside the lead frame 113.
- a portion in which the lead frame 113 is cut may be structurally separated from the chip mounting unit 114 and may include a positive terminal 111 and a negative terminal 112.
- the positive electrode terminal 111 and the negative electrode terminal 112 is formed by cutting a portion of the edge portion of the lead frame 113, preferably, the edge portion of the lead frame 113 is cut off and the chip mounting portion 114 and Electrically shorted terminals can be constructed.
- the metal substrate 110 may be formed by punching a metal plate, and the cutout 115 for forming the positive terminal 111 and the negative terminal 112 when the metal substrate 110 is formed by the punching process. ) May be formed simultaneously with the chip mounting unit 114. Accordingly, the anode 115 and the cathode terminal 112 may be electrically shorted on the lead frame 113 by the cutout 115.
- the metal substrate 110 may be made of a metal material having excellent thermal conductivity, and may include copper (heavy Cu), stainless steel, aluminum (Al), nickel (Ni), magnesium (Mg), zinc (Zn), and tantalum ( Ta), or alloys thereof.
- the substrate is made of aluminum (Al).
- Al aluminum
- an oxide film by anodizing may be further formed on the surface of the chip mounting part 114 of the metal substrate 110.
- an insulating layer of a thin film by an oxide film may be formed on the surface of the metal substrate 110.
- the positive electrode terminal 111 and the negative terminal 112 which are shorted through the metal substrate 110 and the cutout 115 have the chip mounting unit when the package is manufactured. Electrical shorts that can occur in contact with 114 can be additionally prevented.
- a groove or a hole 116 may be further formed on the edge portion of the lead frame 113, the positive terminal 111, and the negative terminal 112 of the metal substrate 110.
- the reason for forming the grooves or holes 116 is that a part of the molding material constituting the molding part 130 is formed when the molding part 130 is formed on the lead frame 113 of the metal substrate 110.
- the molding unit 130 is to ensure a rigid coupling on the lead frame 113.
- At least one LED chip 120 may be mounted on the chip mounting unit 114 of the metal substrate 110 in the center portion.
- the LED chip 120 mounted at the center of the chip mounting unit 120 may be electrically connected to the lead frame 113 and the positive terminal 111 and the negative terminal 112 short-circuited through wire bonding.
- the LED chip 120 is preferably mounted on the chip mounting unit 114 so that one chip is positioned at the center of the chip mounting unit 114 so that the luminous efficiency can be maintained uniformly on the chip mounting unit 114.
- a plurality of LED chips 120 may be mounted on the chip mounting unit 114 of the metal substrate 110.
- the LED chips 120 may be arranged in a row or a plurality of rows at regular intervals. have.
- the molding unit 130 may be formed on the metal substrate 110 on which the LED chip 120 is mounted on the chip mounting unit 114.
- the molding part 130 may be formed by applying a transparent polymer resin, that is, transparent EMC, and curing the transparent polymer resin. If necessary, the molding part 130 may add a fluorescent material or a wavelength conversion material to the transparent EMC to emit light emitted from the LED chip 120.
- the refractive index may be improved, and the luminous efficiency may be improved by improving the refractive index.
- the lens unit 140 formed on the upper surface of the molding unit 130 may be formed simultaneously with the molding unit 130 through a separate mold.
- the lens unit 140 is preferably formed of transparent EMC, which is a polymer resin of the same material as the molding unit 130.
- transparent EMC is a polymer resin of the same material as the molding unit 130.
- the lens unit 140 may be formed to have a predetermined curved surface only on the upper part of the region where the LED chip 120 is mounted, as shown in FIG. 1 when the single LED chip 120 is mounted on the chip mounting unit 114.
- the chip mounting unit 114 may be formed to have a predetermined curved surface on the entire upper surface of the molding unit 130.
- FIG. 3 is a cross-sectional view of another embodiment of an LED package according to the present invention
- FIG. 4 is a plan view of another embodiment according to the present invention.
- the LED package 100 of the present embodiment may further be formed with a light blocking film 160 to surround the side of the molding portion 130.
- the light blocking layer 160 may be formed to have a predetermined thickness by being in close contact with each side of the molding part 130, and may be formed of a black-based EMC capable of absorbing or reflecting light emitted from the LED chip 120. Can be.
- light emitted from the LED chip 120 by the light blocking layer 160 may be prevented from leaking to the side surface of the molding part 130.
- the light blocking layer 160 is separated from the lead frame 113 electrically connected to the chip mounting unit 114 of the metal substrate 110 and electrically cut by the cutout 115 from the lead frame 113. It may be formed on the edge portion of the positive terminal 111 and the negative terminal 112, the positive terminal 111 and the negative terminal 112 due to the adhesive force by forming the light blocking film 160 lead frame 113 ) And an integral metal substrate 110 supporting the molding part 130 while maintaining an insulation state.
- Figure 5 is a cross-sectional view of the LED package of another embodiment according to the present invention.
- the cavity 170 is formed in the LED chip 120 mounting area formed on the chip mounting portion 114 of the metal substrate 110, the cavity 170 of the LED chip 120 may be mounted on the bottom.
- the cavity 120 may be simultaneously formed during the punching process by the press working of the metal substrate 110 on which the lead frame 113, the positive electrode terminal 111, and the negative electrode terminal 112 are formed.
- a separate reflective member 180 may be applied to the inner wall surface of the cavity 170.
- the reflective member 180 may improve light emission efficiency of the LED chip 120 by allowing light emitted from the LED chip 120 mounted on the bottom surface to be reflected and irradiated to the upper portion of the cavity 170. Stable mounting of 120 may be achieved.
- the molding part 130 formed on the metal substrate 110 may be formed on the entire upper surface of the metal substrate 110 as shown in FIG. 5, but the transparent EMC is filled only in the cavity 170 to be molded.
- the upper surface of the unit 130 may be formed at the same height as the upper surface of the metal substrate 110, and the lens unit 140 may be integrally formed with a predetermined curved surface on the upper portion of the molding unit 130. have.
- Figures 6 to 10 are process diagrams showing the manufacturing process of the LED package according to the present invention.
- the LED package manufacturing method first, preparing a metal member 200 cut in the form of a strip, the positive electrode terminal 111 and the negative electrode terminal at regular intervals on the metal member 200 Forming a metal substrate 110 having the 112 formed thereon, mounting the LED chip 120 on the chip mounting part 114 of the metal substrate 110, and mounting the LED chip 120 to the anode terminal. Wire bonding with the 111 and the cathode terminals 112, and forming the molding unit 130 and the lens unit 140 on the metal substrate 110.
- a carrier (not shown) may be further attached to a lower surface of the metal member 200, and the metal member may be punched out by a punching process using a press while the carrier is attached.
- the metal substrate 110 may be formed on the 200 at regular intervals.
- a plurality of metal substrates 110 may be simultaneously formed on the metal member 200 on the plate by a punching process.
- the carrier is a component that is finally removed when the manufacture of the LED package on the metal member 200, the role of fixing the plurality of metal substrates (110) when manufacturing the metal substrate 110 by the press process during the LED package manufacturing.
- the metal substrate 110 includes a chip mounting part 114 having a lead frame 113 formed at an outer side thereof, and is electrically connected to the chip mounting part 114 by a cutout 115 at an edge portion of the lead frame 113. It may be composed of a positive terminal 111 and a negative terminal 112 short-circuited.
- the method may further include forming a hole or a groove 116 on the lead frame 113 of the metal substrate 110.
- a plurality of grooves or holes 116 may be formed in a line along the lead frame 113, and a part of the molding material that is hardened on the upper portion of the metal substrate 110 may be formed in the forming of the molding part 130.
- the molding part 130 may be firmly coupled to the lead frame 113 of the metal substrate 110 by being injected into the hole 116.
- the LED chip 120 is mounted on the upper surface of the chip mounting part 114 of the metal substrate 110, and the LED chip 120 is seated at the center of the chip mounting part 114 and the chip mounting part 114. ) Or one or more LED chips 120 may be arranged in plurality.
- the LED chip 120 When the LED chip 120 is seated on the chip mounting unit 114, the LED chip 120 may be electrically connected to the positive terminal 111 and the negative terminal 112 by wire bonding.
- the molding unit 130 and the lens unit 140 is made of the same material, that is, transparent EMC It can be formed at the same time using.
- a mold (not shown) in which an inverted shape of the lens unit 140 and the molding unit 130 is transferred onto a strip-shaped metal member 200 having a plurality of metal substrates 110 formed thereon.
- the molding part 130 and the lens part 140 may be integrally formed at the same time. Through this process, it is possible to freely implement the shape of the lens unit 140.
- the method may further include forming a light reflection film 160 on each side of the molding part 130.
- the light reflection film 160 may be formed in close contact with the side of the transparent molding part 130, and the light emitted from the LED chip 120 mounted on the chip mounting part 114 is directed to the side of the molding part 130. Leakage can be prevented.
- the molding part 130 and the lens part 140 are formed on the metal substrate 110 formed on the metal member 200, and the light reflection film 160 is formed on the side surface of the molding part 130.
- the method may further include cutting along the scribe line L formed at both sides of the metal substrate 110, and manufacturing the individual LED packages may be completed by cutting the scribe line L.
- the cavity can be formed by pressing the press in the center of the chip mounting portion 114 of the metal substrate 110, LED on the bottom of the cavity
- the chip 120 may be seated.
- a reflection member may be further formed on the inner surface of the cavity so that the light emitted from the LED chip 120 is reflected so that the reflected light is irradiated upwardly to the upper portion of the cavity, thereby improving luminous efficiency of the LED chip 120.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201280002354.9A CN103270612B (zh) | 2011-10-10 | 2012-07-06 | Led封装 |
JP2013538673A JP5572766B2 (ja) | 2011-10-10 | 2012-07-06 | Ledパッケージ |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110103065A KR101186815B1 (ko) | 2011-10-10 | 2011-10-10 | Led 패키지 |
KR10-2011-0103065 | 2011-10-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013055013A1 true WO2013055013A1 (ko) | 2013-04-18 |
Family
ID=47287212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2012/005390 WO2013055013A1 (ko) | 2011-10-10 | 2012-07-06 | Led 패키지 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5572766B2 (zh) |
KR (1) | KR101186815B1 (zh) |
CN (1) | CN103270612B (zh) |
WO (1) | WO2013055013A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015062226A (ja) * | 2013-09-23 | 2015-04-02 | 弘凱光電(深セン)有限公司 | 側面漏光防止用の発光ダイオードパッケージ構造及びその製造方法 |
CN110908180A (zh) * | 2018-09-17 | 2020-03-24 | 夏普株式会社 | 照明装置、显示装置及照明装置的制造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101483010B1 (ko) * | 2013-07-29 | 2015-01-19 | 주식회사 굿엘이디 | Led 패키지 |
CN114187849B (zh) * | 2021-12-09 | 2024-03-15 | 惠州华星光电显示有限公司 | Led显示面板及显示设备 |
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KR20080110285A (ko) * | 2007-06-15 | 2008-12-18 | 삼성전자주식회사 | 반도체 스택 패키지 및 그의 제조 방법 |
KR20100003332A (ko) * | 2008-06-26 | 2010-01-08 | 서울반도체 주식회사 | 방열 구조를 갖는 led 패키지 |
KR20100008509A (ko) * | 2008-07-16 | 2010-01-26 | 주식회사 이츠웰 | 표면 실장형 엘이디 패키지와 이를 이용한 백 라이트 유닛 |
KR20100132756A (ko) * | 2009-06-10 | 2010-12-20 | 주식회사 루멘스 | 발광 소자 패키지 및 발광 소자 패키지용 리드 프레임 |
JP2011049325A (ja) * | 2009-08-26 | 2011-03-10 | Seiko Instruments Inc | 発光部品及びその製造方法 |
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JP3447604B2 (ja) * | 1999-02-25 | 2003-09-16 | 株式会社シチズン電子 | 表面実装型発光ダイオード及びその製造方法 |
JP2001308387A (ja) * | 2000-04-24 | 2001-11-02 | Pic Corporation:Kk | 発光ダイオード |
JP2003008078A (ja) * | 2001-06-19 | 2003-01-10 | Sanken Electric Co Ltd | 表面実装型半導体発光装置 |
JP4009097B2 (ja) * | 2001-12-07 | 2007-11-14 | 日立電線株式会社 | 発光装置及びその製造方法、ならびに発光装置の製造に用いるリードフレーム |
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CN103270612B (zh) | 2016-06-15 |
CN103270612A (zh) | 2013-08-28 |
JP2013542617A (ja) | 2013-11-21 |
KR101186815B1 (ko) | 2012-10-02 |
JP5572766B2 (ja) | 2014-08-13 |
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