WO2013051395A1 - Dispositif de soudure et substrat soudé fabriqué à l'aide de celui-ci - Google Patents

Dispositif de soudure et substrat soudé fabriqué à l'aide de celui-ci Download PDF

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Publication number
WO2013051395A1
WO2013051395A1 PCT/JP2012/073952 JP2012073952W WO2013051395A1 WO 2013051395 A1 WO2013051395 A1 WO 2013051395A1 JP 2012073952 W JP2012073952 W JP 2012073952W WO 2013051395 A1 WO2013051395 A1 WO 2013051395A1
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substrate
chamber
sheet
bonding
wafer
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PCT/JP2012/073952
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English (en)
Japanese (ja)
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菅　勝行
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シャープ株式会社
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L21/67092—Apparatus for mechanical treatment
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/081—Disposition
    • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/08151—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/08221—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/08225—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/80003—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/80006—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
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    • H01L2224/80009—Pre-treatment of the bonding area
    • H01L2224/8001—Cleaning the bonding area, e.g. oxide removal step, desmearing
    • H01L2224/80011—Chemical cleaning, e.g. etching, flux
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    • H01L2224/80053—Bonding environment
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    • H01L2224/80065—Composition of the atmosphere being reducing
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    • H01L2224/80053—Bonding environment
    • H01L2224/80091—Under pressure
    • H01L2224/80093—Transient conditions, e.g. gas-flow
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    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
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    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides

Definitions

  • the present invention relates to a bonding apparatus that can be used for bonding a plurality of semiconductor substrates to, for example, an insulating substrate, and a bonding substrate manufactured using the bonding apparatus.
  • low-temperature polysilicon which is polycrystalline Si
  • LCDs liquid crystal displays
  • low-temperature polysilicon has a small crystal grain size, so that the variation in characteristics increases.
  • the variation can be reduced by forming a single crystal having no crystal grain size, it is difficult to form single crystal Si on a large substrate using a normal film formation method. Therefore, a technique for attaching a single crystal Si wafer on a glass substrate has been studied.
  • Patent Document 1 discloses that a first surface of each of a plurality of donor semiconductor wafers is brought into contact with a glass substrate; first surfaces of the plurality of donor semiconductor wafers are bonded to the glass substrate using electrolysis; Separating multiple donor semiconductor wafers from the substrate, leaving each release layer bonded to the glass substrate; depositing another semiconductor layer on the exposed surface of the release layer to increase the thickness of the release layer A method and apparatus comprising each step is described.
  • an adhesive device for attaching a plurality of smaller Si wafers to a large glass substrate has not been put to practical use at present, but a method of adhering Si wafers to a glass substrate at a stretch after arranging each Si wafer on a jig is considered. For example, it is described in Patent Document 2.
  • a plurality of semiconductor substrates are provided on a first substrate support, a base substrate is provided on a second substrate support, and the surface of the plurality of semiconductor substrates and the surface of the base substrate are spaced apart from each other by a predetermined distance.
  • a second substrate support is disposed above the first substrate support so as to face each other, and the plurality of semiconductor substrates or the base substrate is charged to narrow the distance between the surfaces of the plurality of semiconductor substrates and the base substrate.
  • Patent Document 1 describes the characteristics of a semiconductor-on-insulator in which a device for bonding a plurality of donor semiconductor wafers to a glass substrate is manufactured, but does not describe a specific device configuration. Therefore, it is necessary to separately examine an apparatus for manufacturing a glass substrate in which a plurality of donor semiconductor wafers are efficiently bonded.
  • the semiconductor substrate is directly mounted on the lift pins and lifted up. Therefore, the semiconductor substrate is unstable, and there is a concern about damage due to contact with the lift pins. . Moreover, since it is necessary to have a mechanical and complicated stage provided with a lift pin etc., there exists a problem that it becomes a complicated and expensive bonding apparatus.
  • the present invention has been made in view of the above problems, and aims to reduce the cost of the bonding apparatus by using a simple apparatus configuration.
  • the bonding apparatus is: A sheet having stretchability at least in part and on which the first substrate can be disposed; Holding means capable of arranging a second substrate to be bonded to the first substrate; Sheet stretching means for extending the sheet, bringing the first substrate on which the sheet is disposed closer to the second substrate, and bonding the first substrate to the second substrate; It is characterized by having.
  • the sheet since the sheet has elasticity at least in part, the sheet expands toward the holding means by the sheet expansion / contraction means.
  • the sheet can be brought close to the second substrate disposed on the holding means.
  • the first substrate can be brought closer to the second substrate arranged on the holding means as the sheet extends.
  • the first substrate and the second substrate can be brought into contact with each other by bringing the two substrates close to each other.
  • the first substrate moves together with the sheet, so that the sheet expansion / contraction means does not directly contact the first substrate. For this reason, even if lift pins are used as the sheet expansion / contraction means, there is no need to worry about damage to the first substrate. Further, since the first substrate moves together with the sheet, the movement can be stably performed.
  • the present invention also includes an adhesive substrate manufactured by using the bonding apparatus having the above-described configuration, in which the first substrate and the second substrate are bonded.
  • the bonding apparatus has a sheet that can be stretched at least in part and on which a first substrate can be disposed, and a second substrate that is an adhesion target of the first substrate.
  • the present invention also includes an adhesive substrate manufactured using the adhesive device having the above configuration.
  • FIG. 1st embodiment of an adhesion device It is a mimetic diagram concerning a 1st embodiment of an adhesion device concerning the present invention.
  • (A)-(e) is a figure for demonstrating each process of the adhesion
  • (A) is a top view showing the modification of the film for conveyance
  • (b) is a front view showing the modification of the film for conveyance concerning this invention.
  • (A)-(c) is a figure for demonstrating each process of the adhesion
  • (A)-(d) is a figure for demonstrating each process of the adhesion
  • (A)-(d) is a figure for demonstrating each process of the adhesion
  • FIG. 1 is a schematic view of a bonding apparatus 20 that is an embodiment of a bonding apparatus according to the present invention.
  • the bonding apparatus 20 includes a feed roll 3 (moving means, rotating part), a take-up roll 4 (moving means, rotating part), a transfer robot 5 (substrate delivery part), and an upper chamber 6a (chamber of the chamber).
  • a part of the bonding chamber), a chamber lower part 6b (a part of the chamber adjacent to the chamber), a transport film 7 (sheet), a decompression port 8, and a pressure changing means (not shown) are provided.
  • the bonding apparatus 20 is an apparatus used for bonding substrates together as in the conventional configuration described above. In the present embodiment, it is used for bonding a plurality of Si wafers 1 (first substrate, semiconductor substrate) and glass substrate 2 (second substrate, insulator substrate).
  • the transfer film 7 is for arranging a plurality of Si wafers 1.
  • three Si wafers 1 are arranged as a set on the transfer film 7.
  • This set of Si wafers 1 is bonded to a single glass substrate 2.
  • the Si wafers 1 arranged in a set may be one or two, or three or more.
  • the film 7 for conveyance has depth, and the Si wafer 1 may be arrange
  • the transport film 7 preferably has appropriate tackiness.
  • the chamber upper portion 6a and the chamber lower portion 6b constitute a chamber 6 ((b) in FIG. 2).
  • the chamber upper portion 6a and the chamber lower portion 6b can be moved away from each other or brought into contact with each other by moving their relative positions using an apparatus (not shown).
  • an apparatus not shown.
  • the glass substrate 2 is held inside the chamber 6. That is, adhesion between the plurality of Si wafers 1 arranged on the transfer film 7 and the glass substrate 2 held inside the chamber 6 is performed in the chamber 6.
  • the chamber 6 is provided with an adhesive chamber 9 and an adjacent chamber 10 by dividing the internal space by sandwiching a transfer film 7 extending between the chamber upper portion 6a and the chamber lower portion 6b. Become.
  • the bonding chamber 9 is a chamber constituted by the chamber upper portion 6 a and the transport film 7. Further, in the bonding chamber 9, the plurality of Si wafers 1 and the glass substrate 2 are bonded to produce an bonded substrate. Details will be described later.
  • Adjacent room 10 is a room constituted by chamber lower part 6 b and transport film 7.
  • the transport robot 5 is for placing the Si wafer 1 on the transport film 7 by moving up and down. Further, the transfer film 7 is extended outside the chamber 6, and the Si wafer 1 is placed outside the chamber 6.
  • the decompression port 8 is provided in the chamber upper part 6a in order to suck the gas in the bonding chamber 9 or to release the gas to the bonding chamber 9. For example, in order to depressurize (evacuate) the bonding chamber 9, the gas in the bonding chamber 9 is sucked, or when the gas in the bonding chamber 9 is pressurized through the transfer film 7, Released from the bonding chamber 9.
  • the pressure changing means (not shown) is for changing the pressure in the bonding chamber 9.
  • the pressure reducing port 8 is connected and the pressure in the bonding chamber 9 is decreased by sucking the gas in the bonding chamber 9 or the pressure in the bonding chamber 9 is increased by sending the gas to the bonding chamber 9. can do.
  • the delivery roll 3 and the take-up roll 4 are both located inside the end of the belt-shaped transport film 7.
  • the two rolls are at substantially the same height with respect to the horizontal plane and have the same shape.
  • the two rolls can move the transport film 7 by rotating. Further, by moving the transfer film 7, the Si wafer 1 disposed on one region (a non-facing region not facing the glass substrate 2) outside the chamber 6 is placed in the chamber 6. It is possible to move the Si wafer 1 and the glass substrate 2 to face each other (a facing area facing the glass substrate 2).
  • the feed roll 3 and the take-up roll 4 are disposed along the horizontal direction with the chamber lower part 6b interposed therebetween, and as shown in FIG.
  • the chamber lower portion 6b is disposed between the transfer film 7 and the transfer film 7.
  • the configuration of the transport film 7, the feed roll 3, and the take-up roll 4 can be a belt conveyor, a Roll-to-Roll, or the like.
  • FIGS. 2A to 2E are views for explaining each step of the bonding method according to the first embodiment.
  • Step 1 Arrangement of the Si wafer 1 on the transport film 7
  • Step 2 setting the Si wafer 1 into the chamber 6 by moving the transport film 7
  • Step 3 Adhesion between the Si wafer 1 and the glass substrate 2 with the lifting of the transport film 7 by decompression
  • Process 4 Four processes of peeling with the conveyance film 7 and Si wafer 1 by pressure reduction cancellation
  • the arrangement of the Si wafer 1 may be performed in a state where the feed roll 3 and the take-up roll 4 are rotated and the transport film 7 is moved. Further, in order to make the intervals between the Si films 1 installed on the transport film 7 uniform, the rotation speeds of the feed roll 3 and the take-up roll 4 are made constant, and the transport film 7 can be moved at a constant speed. preferable.
  • the feed roll 3 and the take-up roll 4 may be rotated after the arrangement of the Si wafer 1 is completed. At this time, if it is necessary to place a plurality of Si wafers 1 on the transfer film 7, the transfer robot 5 is moved horizontally with respect to the transfer film 7 to place the Si wafers 1.
  • the delivery roll 3 When all of the plurality of Si wafers 1 to be bonded to the glass substrate 2 held by the chamber upper portion 6a are moved to the lower portion of the chamber upper portion 6a and the glass substrate 2 and the plurality of Si wafers 1 face each other, the delivery roll 3 Then, the rotation of the take-up roll 4 is stopped so that the Si wafer 1 does not move. Next, the chamber upper portion 6a and the chamber lower portion 6b are brought into contact with each other via the transfer film 7, so that the chamber upper portion 6a is moved downward and the chamber lower portion 6b is moved upward. Moreover, you may move either the chamber upper part 6a or the chamber lower part 6b.
  • FIG. 2B the chamber upper portion 6a and the chamber lower film 6b are brought into contact with each other via the conveying film 7, whereby the chamber upper portion 6a and the conveying film 7 form an adhesion chamber 9. 6b and the film 7 for conveyance form the adjacent chamber 10.
  • FIG. 9 the glass substrate 2 held in the chamber upper portion 6 a and the plurality of Si wafers 1 arranged on the transfer film 7 face each other.
  • the transport film 7 has elasticity.
  • a film made of polyester, polycarbonate, polyester, or the like, or a stretchable and flexible material such as silicon rubber can be used as the transport film 7, a film made of polyester, polycarbonate, polyester, or the like, or a stretchable and flexible material such as silicon rubber can be used.
  • the transport film 7 since the transport film 7 has elasticity and flexibility, it is pulled upward when the bonding chamber 9 is depressurized. Further, by further reducing the pressure, the transport film 7 is pulled up further, and the volume of the bonding chamber 9 is reduced. Note that the entire transport film 7 need not have elasticity.
  • the Si wafer 1 disposed on the transfer film 7 is also lifted in the same manner.
  • the Si wafer 1 is pulled up to some extent, the Si wafer 1 and the glass substrate 2 come into contact with each other.
  • the adhesion region between the Si wafer 1 and the glass substrate 2 is expanded by pulling up the Si wafer 1 and the transfer film 7 by reducing the pressure in the bonding chamber 9.
  • the adhesion region refers to a region where the Si wafer 1 and the glass substrate 2 are in contact with each other and bonded.
  • the area of the bonding region can be expanded in a state where air bubbles are prevented from entering the bonding region. The decompression is continued until all the Si wafers 1 and the glass substrate 2 are bonded.
  • the Si wafer 1 and the glass substrate 2 can be directly bonded without using an adhesive or the like by using the wafer direct bonding technique (Wafer Direct Bonding).
  • wafer Direct Bonding wafer Direct Bonding
  • cleaning and surface treatment of the Si wafer 1 and the glass substrate 2 are performed using a chemical such as acid, pure water, or the like.
  • a chemical such as acid, pure water, or the like.
  • the surfaces of the Si wafer 1 and the glass substrate 2 are both hydrophilic. Further, these surfaces may be made hydrophilic by performing UV light irradiation treatment, ozone water cleaning treatment, or the like.
  • the Si wafer 1 and the glass substrate 2 are arbitrarily bonded. Therefore, it is possible to obtain an adhesive substrate in which the Si wafer 1 and the glass substrate 2 are bonded by enlarging the contact area between the Si wafer 1 and the glass substrate 2 without applying a large force to the Si wafer 1 and the glass substrate 2.
  • the above-mentioned adhesion is formed by a hydrogen bond generated between the Si—O bond on the Si wafer 1 and the Si—O bond on the glass substrate 2.
  • the adhesive strength of an adhesive substrate can be further improved by heat-processing the adhesive substrate obtained by the said adhesion
  • step 5 which is a step after step 4 above, the chamber 6 is opened by moving the chamber upper portion 6a and the chamber lower portion 6b. Then, as shown in FIG. 2E, the produced bonded substrate is taken out from the chamber 6a. When continuing the bonding process, a new glass substrate 2 is held in the chamber 6a. Further, outside the chamber 6, the Si wafer 1 is placed on the transfer film 7 using the transfer robot 5 in the same manner as in Step 1. After the installation of the Si wafer 1, the delivery roller 3 and the take-up roller 4 are rotated to move the Si wafer 1 installed on the transfer film 7 into the chamber 6, and the above steps 1 to 4 are performed. As a result, a new adhesive substrate can be manufactured.
  • the Si wafer 1 By installing the Si wafer 1 in advance, it can be moved into the chamber 6 immediately after the separation of the chamber 6, so that an adhesive substrate can be efficiently produced.
  • the bonding apparatus 20 according to the present embodiment uses the transport film 7 having a simpler structure than the conventional one, the bonding apparatus can be manufactured at low cost.
  • the bonding apparatus 20 according to the present embodiment has a mechanism that allows the Si wafer 1 and the glass substrate 2 to be bonded to each other by pressure reduction by gas suction or the like, and physically applies pressure like a conventional lift pin. Since it does not have, it can manufacture a bonding apparatus at lower cost.
  • the transport film 7 extends from the chamber 6, when the Si wafer 1 and the glass substrate 2 are bonded in the bonding chamber 9, the next Si The wafer 1 can be placed on the transfer film 7. That is, since the Si wafer 1 can be moved into the chamber 6 immediately after the separation of the chamber 6, an adhesive substrate can be produced efficiently, and the production efficiency can be improved.
  • the Si wafer 1 is lifted together with the transfer film 7 due to pressure fluctuation, it is possible to lift up without using a conventional lift pin, and it is possible to lift up stably.
  • the bonding apparatus 20 is suitable for bonding a plurality of smaller wafers to a large glass substrate.
  • FIG. 3A is a plan view illustrating a modified example of the transport film
  • FIG. 3B is a front view illustrating a modified example of the transport film according to the present invention.
  • the Si wafer 1 is placed on the wafer placement film 11, the SUS frame 12 is moved into the chamber 6, and the ends of the SUS frame 12 and the wafer placement film 11 are placed at the chamber upper portion 6 a and the chamber lower portion 6 b. Sandwiched between.
  • the formed chamber 6 and wafer placement film 11 are divided into an adhesion chamber 9 and an adjacent chamber 10 as in the first embodiment. Since the method for bonding the glass substrate 2 held in the chamber 6 and the Si wafer 1 is the same as that in the first embodiment, the description thereof is omitted.
  • FIGS. 4A to 4C are diagrams for explaining each step of the bonding method according to one embodiment (second embodiment) of the present invention.
  • the same reference numerals are given to those having the same functions as those described in the first embodiment, and the explanation thereof is omitted.
  • a bonding device 21 that adjusts the pressure in the adjacent chamber 10 using a pressurizing port 13, a valve 14, an open port 15, and a gas cylinder 16 as pressure changing means.
  • the pressure change means changes the pressure in the adjacent chamber 10. That is, the pressure in the adjacent chamber 10 is increased by flowing gas into the adjacent chamber 10, or the pressure in the adjacent chamber 10 is decreased by flowing out gas from the adjacent chamber 10.
  • the pressurizing port 13 is formed in the chamber lower part 6b, from which gas can be injected into the adjacent chamber 10.
  • the valve 14 opens and closes the piping to adjust the gas injection into the adjacent chamber 10 and the gas outflow from the adjacent chamber.
  • the opening 15 is for opening the valve 14 and releasing it into the gas atmosphere of the adjacent chamber 10.
  • the gas cylinder 16 is a gas supply source to the adjacent chamber 10, and gas is injected into the adjacent chamber 10 through the valve 15 and the pressure port 13.
  • the gas in the bonding chamber 9 is released from the decompression port 8 by pressurization from the adjacent chamber 10. After the Si wafer 1 and the glass substrate 2 are in contact with each other, the Si wafer 1 and the glass substrate 2 are bonded together as the transfer film 7 is stretched by the inflow of gas into the adjacent chamber 10, and the bonding area between the two is determined. growing.
  • FIG. 4B after the bonding between the plurality of Si wafers 1 and the glass substrate 2 is completed, a gas is caused to flow into the bonding chamber 9 through the decompression port 8 and the valve 14 is opened to open the pressure port. Gas is allowed to flow out from the adjacent chamber 10 through the opening 13 and the opening 15.
  • the adhesion between the transport film 7 and the Si wafer 1 is released.
  • the bonded substrate produced by bonding the plurality of Si wafers 1 and the glass substrate 2 is taken out from the bonding chamber 9, and the new glass substrate 2 is held in the chamber upper portion 6a.
  • the next Si wafer 1 disposed on the transport film 7 is moved by rotating the feed roll 3 and the take-up roll 4 and moving the transport film 7. It can be transferred into the chamber 6.
  • FIG. Finer control can be performed by combining the decompression of the bonding chamber 9 described in the first embodiment with the pressurization of the adjacent chamber 10.
  • the present invention is not limited to this, for example, an object that thermally expands. Is disposed in advance in the adjacent chamber 10, and when the transport film 7 is to be pushed up toward the bonding chamber, the object is expanded to increase the volume of the adjacent chamber 10. Push-up may be realized.
  • a heat source that can be controlled is mounted on the object, and heat can be applied to the object by supplying electric power to the heat source during expansion.
  • the volume reduction of the bonding chamber of the first embodiment is not limited to that due to deaeration, but may be one that utilizes expansion / contraction due to heat as described above.
  • FIG. 5 is a diagram showing a configuration of the bonding apparatus 22 according to one embodiment (third embodiment) of the present invention.
  • the transfer film 7 that divides the chamber 6 into the bonding chamber 9 and the adjacent chamber 10 is the first except for the configuration in which the glass substrate 2 is inclined in the chamber 6. This is the same as in the first embodiment.
  • each of the chamber upper part 6a and the chamber lower part 6b has a first side part in contact with one side of the transport film 7 and a second side part in contact with the other side.
  • the first side portion and the second side portion of the chamber upper portion 6a are configured with different heights, and the first side portion and the second side portion of the chamber lower portion 6b are configured with different heights.
  • the total height of the first side portion of 6a and the first side portion of the lower chamber portion 6b is equal to the total height of the second side portion of the upper chamber portion 6a and the second side portion of the lower chamber portion 6b. It is configured as follows. Thereby, the conveyance film 7 can be inclined with respect to the glass substrate 2. At this time, the plurality of Si wafers 1 disposed on the transfer film 7 in the bonding chamber 9 are inclined with respect to the glass substrate 2.
  • FIG. 7 is a diagram showing adhesion between the Si wafer 1 and the glass substrate 2 according to the first embodiment.
  • the Si wafer 1 is first brought into contact with the glass substrate 2 from the Si wafer 1 arranged at the center of the portion of the transport film 7 where the chamber 6 is divided, and the Si wafer 1 contacts the glass substrate 2 in parallel. This is because the central portion of the transport film in the chamber 6 rises when the pressure in the bonding chamber 9 is reduced.
  • the transport film 7 in the chamber 6 other than the central portion is inclined with respect to the glass substrate 2. Therefore, the Si wafer 1 other than the Si wafer 1 located in the central portion comes into contact with the glass substrate 2 from the end portion of the Si wafer 1 while being inclined with respect to the glass substrate 2.
  • the Si wafer 1 at the end closest to the glass substrate 2 (the left end in FIG. 6B and FIG. 8).
  • the Si wafer 1 comes into contact with the glass substrate 2 from the end of the Si wafer 1 in a state where the Si wafer 1 is inclined with respect to the glass substrate 2.
  • FIG. 9A is a diagram showing that the Si wafer 1 comes into contact with the glass substrate 2 from the end and the adhesion region is enlarged
  • FIG. 9B is a diagram showing that the Si wafer 1 is glass substrate 2. It is a figure showing that an adhesion
  • the adhesion between the Si wafer 1 and the glass substrate 2 proceeds from the end toward the center. If the bonding between the Si wafer 1 and the glass substrate 2 proceeds from one end to the other end, the bonding ends. In this case, since the adhesion expands only from the end portion of the Si wafer 1 that is in contact with the glass substrate 2, there is no occurrence of air accumulation by colliding with another adhesion. Therefore, it is possible to ensure good adhesion and high yield.
  • the Si wafer 1 that contacts the glass substrate 2 in parallel is the Si wafer 1 disposed in the central portion of the transfer film 7 in the chamber 6.
  • the first embodiment since the Si wafer 1 and the glass substrate 2 are bonded to each other in the area other than the central portion and started from the end of the Si wafer 1, it is possible to perform high-quality bonding with no air accumulation. is there.
  • the first embodiment is a configuration in which no air pocket is formed. Compared to the embodiment, an adhesive substrate that does not cause poor adhesion can be more efficiently produced.
  • the transport film 7 is inclined so that the left side of the transport film 7 in the chamber 9 has a higher relative height than the right side.
  • An inclination may be formed in the transport film 7 so that the relative height is higher than that on the left side.
  • the present invention is not limited to this, and this side You may comprise so that inclination may be given to the other side orthogonal to this, or both.
  • FIG. 10 is a modification of the bonding apparatus 22 according to this embodiment.
  • the glass substrate 2 is held in the chamber 6 so that the glass substrate 2 is inclined with respect to the Si wafer 1 disposed on the transfer film 7.
  • the adhesion chamber 9 is depressurized, and the transfer film 7 in the chamber 6 is stretched to bond the Si wafer 1 and the glass substrate 2 from the end of the Si wafer 1 in an inclined state. Therefore, the same effect as in the third embodiment can be obtained.
  • FIG. 11A to 11D are views for explaining each step of the bonding method according to the fourth embodiment.
  • the same reference numerals are given to those having the same functions as those described in the first embodiment, and the explanation thereof is omitted.
  • the configuration of the bonding apparatus 23 provided with a substrate stage 30 (holding means), a peeling guide 31 (peeling means), a push-up pin 32 (sheet expansion / contraction means) and a stage 33 is shown. ing.
  • the glass substrate 2 is held on the substrate stage 30, and peeling guides 31 are installed on the left and right sides of the substrate stage 30.
  • the peeling guide 31 is for releasing the contact between the transport film 7 and the Si wafer 1 after the adhesion between the Si wafer 1 and the glass substrate 2 is completed.
  • the substrate stage 30 holding the glass substrate 2 and the push-up pin 32 face each other through the transfer film 7.
  • the push-up pins 32 are formed on the stage 33 and can push up the transfer film 7 and the Si wafer 1 disposed on the film. Further, since the transport film 7 has stretchability at least in part, it is extended by being pushed up by the push-up pin 32.
  • the stage 33 may be provided with movable means.
  • the delivery roll 3 and the take-up roll 4 are rotated, the transport film 7 is moved, the Si wafer 1 and the glass substrate 2 are directly opposed, and the push-up pin 32 is used for transport.
  • the film 7 is adjusted so as to face the Si wafer through the film 7.
  • the push-up pins 32 are lowered, and the contact between the transport film 7 and the push-up pins 32 is released. Furthermore, the contact between the Si wafer 1 and the transport film 7 can be released by bringing the peeling guide 31 into contact with the transport film 7 and applying pressure downward. When the contact between the Si wafer 1 and the transport film 7 is released, the transport film 7 returns to its original state due to its own elasticity. Therefore, an adhesive substrate in which the Si wafer 1 and the glass substrate 2 are bonded can be obtained.
  • the peeling guide 31 is pulled upward to release the pressure on the transport film 7. Then, when the produced bonded substrate is taken out from the substrate stage 30 and the bonding process is continued, a new glass substrate 2 is held on the substrate stage 30.
  • the Si wafer 1 is placed on the transport film 7 by using the transport robot 5, and the feed roller 3 and the take-up roller 4 are rotated together to thereby rotate the Si wafer 1. Is moved until it faces the glass substrate 2. By doing so, a new adhesive substrate can be produced.
  • the same number of push-up pins 32 as the number of Si wafers 1 to be bonded to the glass substrate 2 are shown, but the number of push-up pins 32 is not limited.
  • the push-up pin 32 may be installed in the chamber lower part 6b of FIG. 1 etc. instead of the pressure changing means.
  • the peeling guides 31 are arranged on the left and right sides of the substrate stage 30, but it is not necessary to arrange them on both the left and right sides, and may be arranged on either one.
  • the Si wafer 1 disposed on the transport film 7 may be configured to be inclined with respect to the glass substrate 2, and the glass substrate 2 may be disposed on the Si wafer 1 disposed on the transport film 7.
  • the glass substrate 2 may be held on the substrate stage 30 so that the angle is inclined. As a result, it is possible to prevent air bubbles from being mixed into the adhesion region as in the third embodiment.
  • the bonding apparatus has a sheet that can be stretched at least in part and on which a first substrate can be disposed, and a second substrate that is an adhesion target of the first substrate.
  • the sheet since the sheet has elasticity at least in part, the sheet expands toward the holding means by the sheet expansion / contraction means.
  • the sheet can be brought close to the second substrate disposed on the holding means.
  • the first substrate can be brought closer to the second substrate arranged on the holding means as the sheet extends.
  • the first substrate and the second substrate can be brought into contact with each other by bringing the two substrates close to each other.
  • the first substrate moves together with the sheet, so that the sheet expansion / contraction means does not directly contact the first substrate. For this reason, even if lift pins are used as the sheet expansion / contraction means, there is no need to worry about damage to the first substrate. Further, since the first substrate moves together with the sheet, the movement can be stably performed.
  • the sheet in addition to the above-described configuration, is configured in a band shape, and a holding region that is opposed to the holding unit and that is adjacent to the holding region.
  • a non-facing area not facing the means, and the bonding apparatus moves the sheet by moving the sheet to a substrate delivery section that places the first substrate in the non-facing area.
  • Moving means for conveying the first substrate arranged by the delivery section so as to face the second substrate, and the moving means moves the belt-like sheet by rotating. It is preferably a rotating part.
  • the first substrate is arranged using the substrate delivery unit in the non-facing region of the sheet that is not directly opposed to the holding unit, and the arranged first substrate is moved to the second substrate by the moving unit. It can be conveyed so as to face to.
  • the first substrate placed on the sheet can be moved by rotating the belt-shaped sheet, so that the first substrate faces the second substrate without providing a complicated mechanism. Can be conveyed.
  • the stage for placing the substrate does not need to be moved back and forth between the place where the substrate is placed and the place where the substrate is bonded, and the first step is performed by progressive feeding.
  • the substrate can be continuously transferred so that the first substrate faces the second substrate. That is, immediately after the bonding is completed, the first substrate to be bonded next can be transported so that the first substrate faces the second substrate, so that the manufacturing time of the bonded substrate can be shortened and the manufacturing efficiency can be improved. be able to.
  • the holding means arranges the sheet therein, and the sheet is adjacent to the bonding chamber and the bonding chamber by the sheet.
  • a chamber divided into a chamber is formed, and the chamber is configured to adhere the first substrate disposed on the sheet and the second substrate disposed in the chamber in a certain bonding chamber.
  • the sheet expansion / contraction means extends the sheet by performing at least one of depressurization of the bonding chamber and pressurization of the adjacent chamber, and is arranged on the sheet in the certain bonding chamber.
  • the pressure change means is preferably a pressure changing means for bringing the first substrate close to the second substrate and bonding the first substrate to the second substrate.
  • the inside of the chamber can be divided into an adhesion chamber and an adjacent chamber adjacent to the adhesion chamber.
  • the sheet normally exists in the bonding chamber and the boundary between the adjacent chambers and is not stretched.
  • the sheet has elasticity at least partially. Therefore, when at least one of depressurization of the bonding chamber and pressurization of the adjacent chamber is performed by the pressure changing means, the sheet in a normal state is adjacent to the sheet as a boundary. Due to the difference between the internal pressures of the two chambers, a force that is pulled or pushed out toward one of the chambers acts to deform so as to extend toward one of the chambers.
  • the sheet can be brought close to the second substrate disposed in the one chamber.
  • the first substrate can be brought closer to the second substrate arranged in the chamber as the sheet is extended.
  • the first substrate and the second substrate can be brought into contact with each other by bringing the two substrates close to each other.
  • the first substrate and the second substrate are bonded, and then a force is applied to the sheet to extend the sheet. It is preferable to provide a peeling means for shrinking the sheet and separating the sheet from the first substrate.
  • the first substrate is left on the second substrate side, and only the sheet is returned to the original state using the peeling means.
  • the first substrate can be removed from the sheet.
  • the pressure changing unit may bond the first substrate and the second substrate, then pressurize the bonding chamber, and It is preferable that the extension sheet is contracted to separate the sheet and the first substrate by performing at least one of decompression of the adjacent chambers.
  • the first substrate is left on the second substrate side, and only the sheet is returned to the original state using the pressure changing means.
  • the first substrate can be removed from the sheet.
  • the pressure change unit is configured to extend the sheet by pressurizing the adjacent chamber, and the pressure change unit includes the above-described configuration.
  • the pressurization is preferably performed by flowing a gas into the adjacent chamber from the outside of the adjacent chamber.
  • the first substrate when the first substrate and the second substrate start to contact with each other, the first substrate becomes the second substrate. It is preferable that it is comprised so that it may become the state inclined with respect to.
  • the first substrate is inclined with respect to the second substrate, it is possible to start contact with the second substrate from the end portion of the first substrate.
  • the adhesion proceeds in the direction in which the adhesion area expands from the end of the first substrate. Since the enlargement of the adhesion region occurs only from the end of the first substrate, when a plurality of adhesion regions occur simultaneously on one first substrate, the region and the region when these regions are combined into one at the final stage. It is difficult to form defects such as air traps that occur at the boundary between the two and the defective adhesion.
  • the holding means is configured such that the second substrate is the first substrate when the second substrate and the first substrate start to contact each other. It is preferable to hold the second substrate so as to be inclined with respect to.
  • the second substrate since the second substrate is inclined with respect to the first substrate, the second substrate can be brought into contact with the end portion of the first substrate.
  • the adhesion proceeds in the direction in which the adhesion area expands from the end of the first substrate. Since the enlargement of the adhesion region occurs only from the end of the first substrate, when a plurality of adhesion regions occur simultaneously on one first substrate, the region and the region when these regions are combined into one at the final stage. It is difficult to form defects such as air traps that occur at the boundary between the two and the effect of poor adhesion.
  • a semiconductor substrate can be used as the first substrate, and an insulator substrate can be used as the second substrate.
  • the bonding apparatus since the bonding apparatus does not have a complicated mechanism, the cost of the bonding apparatus can be reduced. Therefore, there is an effect that an inexpensive SOI (silicon on insulator) substrate can be manufactured.
  • SOI silicon on insulator
  • the present invention also includes an adhesive substrate manufactured by using the bonding apparatus having the above-described configuration, in which the first substrate and the second substrate are bonded.
  • the present invention can be used for manufacturing an SOI substrate by bonding a plurality of semiconductor substrates to an insulator substrate.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

La présente invention concerne, dans un de ses modes de réalisation, un dispositif (20) de soudure comportant : un film (7) de transport qui est élastique et sur lequel peut être disposée une tranche (1) de Si; une chambre (6) qui est divisée en une chambre (9) de soudure et une chambre voisine (10), la chambre (9) de soudure étant configurée pour souder la tranche (1) de Si à un substrat (2) en verre; et un moyen de changement de pression qui diminue la pression dans la chambre (9) de soudure pour faire en sorte que le film (7) de transport s'allonge de telle façon que la tranche (1) de Si soit amenée au contact du substrat (2) en verre.
PCT/JP2012/073952 2011-10-07 2012-09-19 Dispositif de soudure et substrat soudé fabriqué à l'aide de celui-ci WO2013051395A1 (fr)

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JP2011-223247 2011-10-07

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007235114A (ja) * 2006-02-03 2007-09-13 Semiconductor Energy Lab Co Ltd 半導体装置の製造装置及び半導体装置の作製方法
JP2009231819A (ja) * 2008-02-26 2009-10-08 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007235114A (ja) * 2006-02-03 2007-09-13 Semiconductor Energy Lab Co Ltd 半導体装置の製造装置及び半導体装置の作製方法
JP2009231819A (ja) * 2008-02-26 2009-10-08 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法

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