WO2013051395A1 - Bonding device and bonded substrate manufactured using same - Google Patents

Bonding device and bonded substrate manufactured using same Download PDF

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Publication number
WO2013051395A1
WO2013051395A1 PCT/JP2012/073952 JP2012073952W WO2013051395A1 WO 2013051395 A1 WO2013051395 A1 WO 2013051395A1 JP 2012073952 W JP2012073952 W JP 2012073952W WO 2013051395 A1 WO2013051395 A1 WO 2013051395A1
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Prior art keywords
substrate
chamber
sheet
bonding
wafer
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PCT/JP2012/073952
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French (fr)
Japanese (ja)
Inventor
菅　勝行
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シャープ株式会社
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Publication of WO2013051395A1 publication Critical patent/WO2013051395A1/en

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    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/081—Disposition
    • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/08151—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/08221—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/08225—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/80003—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/80006—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
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    • H01L2224/80009—Pre-treatment of the bonding area
    • H01L2224/8001—Cleaning the bonding area, e.g. oxide removal step, desmearing
    • H01L2224/80011—Chemical cleaning, e.g. etching, flux
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    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/80053—Bonding environment
    • H01L2224/80054—Composition of the atmosphere
    • H01L2224/80065—Composition of the atmosphere being reducing
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    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/80053—Bonding environment
    • H01L2224/80091—Under pressure
    • H01L2224/80093—Transient conditions, e.g. gas-flow
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    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
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    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides

Definitions

  • the present invention relates to a bonding apparatus that can be used for bonding a plurality of semiconductor substrates to, for example, an insulating substrate, and a bonding substrate manufactured using the bonding apparatus.
  • low-temperature polysilicon which is polycrystalline Si
  • LCDs liquid crystal displays
  • low-temperature polysilicon has a small crystal grain size, so that the variation in characteristics increases.
  • the variation can be reduced by forming a single crystal having no crystal grain size, it is difficult to form single crystal Si on a large substrate using a normal film formation method. Therefore, a technique for attaching a single crystal Si wafer on a glass substrate has been studied.
  • Patent Document 1 discloses that a first surface of each of a plurality of donor semiconductor wafers is brought into contact with a glass substrate; first surfaces of the plurality of donor semiconductor wafers are bonded to the glass substrate using electrolysis; Separating multiple donor semiconductor wafers from the substrate, leaving each release layer bonded to the glass substrate; depositing another semiconductor layer on the exposed surface of the release layer to increase the thickness of the release layer A method and apparatus comprising each step is described.
  • an adhesive device for attaching a plurality of smaller Si wafers to a large glass substrate has not been put to practical use at present, but a method of adhering Si wafers to a glass substrate at a stretch after arranging each Si wafer on a jig is considered. For example, it is described in Patent Document 2.
  • a plurality of semiconductor substrates are provided on a first substrate support, a base substrate is provided on a second substrate support, and the surface of the plurality of semiconductor substrates and the surface of the base substrate are spaced apart from each other by a predetermined distance.
  • a second substrate support is disposed above the first substrate support so as to face each other, and the plurality of semiconductor substrates or the base substrate is charged to narrow the distance between the surfaces of the plurality of semiconductor substrates and the base substrate.
  • Patent Document 1 describes the characteristics of a semiconductor-on-insulator in which a device for bonding a plurality of donor semiconductor wafers to a glass substrate is manufactured, but does not describe a specific device configuration. Therefore, it is necessary to separately examine an apparatus for manufacturing a glass substrate in which a plurality of donor semiconductor wafers are efficiently bonded.
  • the semiconductor substrate is directly mounted on the lift pins and lifted up. Therefore, the semiconductor substrate is unstable, and there is a concern about damage due to contact with the lift pins. . Moreover, since it is necessary to have a mechanical and complicated stage provided with a lift pin etc., there exists a problem that it becomes a complicated and expensive bonding apparatus.
  • the present invention has been made in view of the above problems, and aims to reduce the cost of the bonding apparatus by using a simple apparatus configuration.
  • the bonding apparatus is: A sheet having stretchability at least in part and on which the first substrate can be disposed; Holding means capable of arranging a second substrate to be bonded to the first substrate; Sheet stretching means for extending the sheet, bringing the first substrate on which the sheet is disposed closer to the second substrate, and bonding the first substrate to the second substrate; It is characterized by having.
  • the sheet since the sheet has elasticity at least in part, the sheet expands toward the holding means by the sheet expansion / contraction means.
  • the sheet can be brought close to the second substrate disposed on the holding means.
  • the first substrate can be brought closer to the second substrate arranged on the holding means as the sheet extends.
  • the first substrate and the second substrate can be brought into contact with each other by bringing the two substrates close to each other.
  • the first substrate moves together with the sheet, so that the sheet expansion / contraction means does not directly contact the first substrate. For this reason, even if lift pins are used as the sheet expansion / contraction means, there is no need to worry about damage to the first substrate. Further, since the first substrate moves together with the sheet, the movement can be stably performed.
  • the present invention also includes an adhesive substrate manufactured by using the bonding apparatus having the above-described configuration, in which the first substrate and the second substrate are bonded.
  • the bonding apparatus has a sheet that can be stretched at least in part and on which a first substrate can be disposed, and a second substrate that is an adhesion target of the first substrate.
  • the present invention also includes an adhesive substrate manufactured using the adhesive device having the above configuration.
  • FIG. 1st embodiment of an adhesion device It is a mimetic diagram concerning a 1st embodiment of an adhesion device concerning the present invention.
  • (A)-(e) is a figure for demonstrating each process of the adhesion
  • (A) is a top view showing the modification of the film for conveyance
  • (b) is a front view showing the modification of the film for conveyance concerning this invention.
  • (A)-(c) is a figure for demonstrating each process of the adhesion
  • (A)-(d) is a figure for demonstrating each process of the adhesion
  • (A)-(d) is a figure for demonstrating each process of the adhesion
  • FIG. 1 is a schematic view of a bonding apparatus 20 that is an embodiment of a bonding apparatus according to the present invention.
  • the bonding apparatus 20 includes a feed roll 3 (moving means, rotating part), a take-up roll 4 (moving means, rotating part), a transfer robot 5 (substrate delivery part), and an upper chamber 6a (chamber of the chamber).
  • a part of the bonding chamber), a chamber lower part 6b (a part of the chamber adjacent to the chamber), a transport film 7 (sheet), a decompression port 8, and a pressure changing means (not shown) are provided.
  • the bonding apparatus 20 is an apparatus used for bonding substrates together as in the conventional configuration described above. In the present embodiment, it is used for bonding a plurality of Si wafers 1 (first substrate, semiconductor substrate) and glass substrate 2 (second substrate, insulator substrate).
  • the transfer film 7 is for arranging a plurality of Si wafers 1.
  • three Si wafers 1 are arranged as a set on the transfer film 7.
  • This set of Si wafers 1 is bonded to a single glass substrate 2.
  • the Si wafers 1 arranged in a set may be one or two, or three or more.
  • the film 7 for conveyance has depth, and the Si wafer 1 may be arrange
  • the transport film 7 preferably has appropriate tackiness.
  • the chamber upper portion 6a and the chamber lower portion 6b constitute a chamber 6 ((b) in FIG. 2).
  • the chamber upper portion 6a and the chamber lower portion 6b can be moved away from each other or brought into contact with each other by moving their relative positions using an apparatus (not shown).
  • an apparatus not shown.
  • the glass substrate 2 is held inside the chamber 6. That is, adhesion between the plurality of Si wafers 1 arranged on the transfer film 7 and the glass substrate 2 held inside the chamber 6 is performed in the chamber 6.
  • the chamber 6 is provided with an adhesive chamber 9 and an adjacent chamber 10 by dividing the internal space by sandwiching a transfer film 7 extending between the chamber upper portion 6a and the chamber lower portion 6b. Become.
  • the bonding chamber 9 is a chamber constituted by the chamber upper portion 6 a and the transport film 7. Further, in the bonding chamber 9, the plurality of Si wafers 1 and the glass substrate 2 are bonded to produce an bonded substrate. Details will be described later.
  • Adjacent room 10 is a room constituted by chamber lower part 6 b and transport film 7.
  • the transport robot 5 is for placing the Si wafer 1 on the transport film 7 by moving up and down. Further, the transfer film 7 is extended outside the chamber 6, and the Si wafer 1 is placed outside the chamber 6.
  • the decompression port 8 is provided in the chamber upper part 6a in order to suck the gas in the bonding chamber 9 or to release the gas to the bonding chamber 9. For example, in order to depressurize (evacuate) the bonding chamber 9, the gas in the bonding chamber 9 is sucked, or when the gas in the bonding chamber 9 is pressurized through the transfer film 7, Released from the bonding chamber 9.
  • the pressure changing means (not shown) is for changing the pressure in the bonding chamber 9.
  • the pressure reducing port 8 is connected and the pressure in the bonding chamber 9 is decreased by sucking the gas in the bonding chamber 9 or the pressure in the bonding chamber 9 is increased by sending the gas to the bonding chamber 9. can do.
  • the delivery roll 3 and the take-up roll 4 are both located inside the end of the belt-shaped transport film 7.
  • the two rolls are at substantially the same height with respect to the horizontal plane and have the same shape.
  • the two rolls can move the transport film 7 by rotating. Further, by moving the transfer film 7, the Si wafer 1 disposed on one region (a non-facing region not facing the glass substrate 2) outside the chamber 6 is placed in the chamber 6. It is possible to move the Si wafer 1 and the glass substrate 2 to face each other (a facing area facing the glass substrate 2).
  • the feed roll 3 and the take-up roll 4 are disposed along the horizontal direction with the chamber lower part 6b interposed therebetween, and as shown in FIG.
  • the chamber lower portion 6b is disposed between the transfer film 7 and the transfer film 7.
  • the configuration of the transport film 7, the feed roll 3, and the take-up roll 4 can be a belt conveyor, a Roll-to-Roll, or the like.
  • FIGS. 2A to 2E are views for explaining each step of the bonding method according to the first embodiment.
  • Step 1 Arrangement of the Si wafer 1 on the transport film 7
  • Step 2 setting the Si wafer 1 into the chamber 6 by moving the transport film 7
  • Step 3 Adhesion between the Si wafer 1 and the glass substrate 2 with the lifting of the transport film 7 by decompression
  • Process 4 Four processes of peeling with the conveyance film 7 and Si wafer 1 by pressure reduction cancellation
  • the arrangement of the Si wafer 1 may be performed in a state where the feed roll 3 and the take-up roll 4 are rotated and the transport film 7 is moved. Further, in order to make the intervals between the Si films 1 installed on the transport film 7 uniform, the rotation speeds of the feed roll 3 and the take-up roll 4 are made constant, and the transport film 7 can be moved at a constant speed. preferable.
  • the feed roll 3 and the take-up roll 4 may be rotated after the arrangement of the Si wafer 1 is completed. At this time, if it is necessary to place a plurality of Si wafers 1 on the transfer film 7, the transfer robot 5 is moved horizontally with respect to the transfer film 7 to place the Si wafers 1.
  • the delivery roll 3 When all of the plurality of Si wafers 1 to be bonded to the glass substrate 2 held by the chamber upper portion 6a are moved to the lower portion of the chamber upper portion 6a and the glass substrate 2 and the plurality of Si wafers 1 face each other, the delivery roll 3 Then, the rotation of the take-up roll 4 is stopped so that the Si wafer 1 does not move. Next, the chamber upper portion 6a and the chamber lower portion 6b are brought into contact with each other via the transfer film 7, so that the chamber upper portion 6a is moved downward and the chamber lower portion 6b is moved upward. Moreover, you may move either the chamber upper part 6a or the chamber lower part 6b.
  • FIG. 2B the chamber upper portion 6a and the chamber lower film 6b are brought into contact with each other via the conveying film 7, whereby the chamber upper portion 6a and the conveying film 7 form an adhesion chamber 9. 6b and the film 7 for conveyance form the adjacent chamber 10.
  • FIG. 9 the glass substrate 2 held in the chamber upper portion 6 a and the plurality of Si wafers 1 arranged on the transfer film 7 face each other.
  • the transport film 7 has elasticity.
  • a film made of polyester, polycarbonate, polyester, or the like, or a stretchable and flexible material such as silicon rubber can be used as the transport film 7, a film made of polyester, polycarbonate, polyester, or the like, or a stretchable and flexible material such as silicon rubber can be used.
  • the transport film 7 since the transport film 7 has elasticity and flexibility, it is pulled upward when the bonding chamber 9 is depressurized. Further, by further reducing the pressure, the transport film 7 is pulled up further, and the volume of the bonding chamber 9 is reduced. Note that the entire transport film 7 need not have elasticity.
  • the Si wafer 1 disposed on the transfer film 7 is also lifted in the same manner.
  • the Si wafer 1 is pulled up to some extent, the Si wafer 1 and the glass substrate 2 come into contact with each other.
  • the adhesion region between the Si wafer 1 and the glass substrate 2 is expanded by pulling up the Si wafer 1 and the transfer film 7 by reducing the pressure in the bonding chamber 9.
  • the adhesion region refers to a region where the Si wafer 1 and the glass substrate 2 are in contact with each other and bonded.
  • the area of the bonding region can be expanded in a state where air bubbles are prevented from entering the bonding region. The decompression is continued until all the Si wafers 1 and the glass substrate 2 are bonded.
  • the Si wafer 1 and the glass substrate 2 can be directly bonded without using an adhesive or the like by using the wafer direct bonding technique (Wafer Direct Bonding).
  • wafer Direct Bonding wafer Direct Bonding
  • cleaning and surface treatment of the Si wafer 1 and the glass substrate 2 are performed using a chemical such as acid, pure water, or the like.
  • a chemical such as acid, pure water, or the like.
  • the surfaces of the Si wafer 1 and the glass substrate 2 are both hydrophilic. Further, these surfaces may be made hydrophilic by performing UV light irradiation treatment, ozone water cleaning treatment, or the like.
  • the Si wafer 1 and the glass substrate 2 are arbitrarily bonded. Therefore, it is possible to obtain an adhesive substrate in which the Si wafer 1 and the glass substrate 2 are bonded by enlarging the contact area between the Si wafer 1 and the glass substrate 2 without applying a large force to the Si wafer 1 and the glass substrate 2.
  • the above-mentioned adhesion is formed by a hydrogen bond generated between the Si—O bond on the Si wafer 1 and the Si—O bond on the glass substrate 2.
  • the adhesive strength of an adhesive substrate can be further improved by heat-processing the adhesive substrate obtained by the said adhesion
  • step 5 which is a step after step 4 above, the chamber 6 is opened by moving the chamber upper portion 6a and the chamber lower portion 6b. Then, as shown in FIG. 2E, the produced bonded substrate is taken out from the chamber 6a. When continuing the bonding process, a new glass substrate 2 is held in the chamber 6a. Further, outside the chamber 6, the Si wafer 1 is placed on the transfer film 7 using the transfer robot 5 in the same manner as in Step 1. After the installation of the Si wafer 1, the delivery roller 3 and the take-up roller 4 are rotated to move the Si wafer 1 installed on the transfer film 7 into the chamber 6, and the above steps 1 to 4 are performed. As a result, a new adhesive substrate can be manufactured.
  • the Si wafer 1 By installing the Si wafer 1 in advance, it can be moved into the chamber 6 immediately after the separation of the chamber 6, so that an adhesive substrate can be efficiently produced.
  • the bonding apparatus 20 according to the present embodiment uses the transport film 7 having a simpler structure than the conventional one, the bonding apparatus can be manufactured at low cost.
  • the bonding apparatus 20 according to the present embodiment has a mechanism that allows the Si wafer 1 and the glass substrate 2 to be bonded to each other by pressure reduction by gas suction or the like, and physically applies pressure like a conventional lift pin. Since it does not have, it can manufacture a bonding apparatus at lower cost.
  • the transport film 7 extends from the chamber 6, when the Si wafer 1 and the glass substrate 2 are bonded in the bonding chamber 9, the next Si The wafer 1 can be placed on the transfer film 7. That is, since the Si wafer 1 can be moved into the chamber 6 immediately after the separation of the chamber 6, an adhesive substrate can be produced efficiently, and the production efficiency can be improved.
  • the Si wafer 1 is lifted together with the transfer film 7 due to pressure fluctuation, it is possible to lift up without using a conventional lift pin, and it is possible to lift up stably.
  • the bonding apparatus 20 is suitable for bonding a plurality of smaller wafers to a large glass substrate.
  • FIG. 3A is a plan view illustrating a modified example of the transport film
  • FIG. 3B is a front view illustrating a modified example of the transport film according to the present invention.
  • the Si wafer 1 is placed on the wafer placement film 11, the SUS frame 12 is moved into the chamber 6, and the ends of the SUS frame 12 and the wafer placement film 11 are placed at the chamber upper portion 6 a and the chamber lower portion 6 b. Sandwiched between.
  • the formed chamber 6 and wafer placement film 11 are divided into an adhesion chamber 9 and an adjacent chamber 10 as in the first embodiment. Since the method for bonding the glass substrate 2 held in the chamber 6 and the Si wafer 1 is the same as that in the first embodiment, the description thereof is omitted.
  • FIGS. 4A to 4C are diagrams for explaining each step of the bonding method according to one embodiment (second embodiment) of the present invention.
  • the same reference numerals are given to those having the same functions as those described in the first embodiment, and the explanation thereof is omitted.
  • a bonding device 21 that adjusts the pressure in the adjacent chamber 10 using a pressurizing port 13, a valve 14, an open port 15, and a gas cylinder 16 as pressure changing means.
  • the pressure change means changes the pressure in the adjacent chamber 10. That is, the pressure in the adjacent chamber 10 is increased by flowing gas into the adjacent chamber 10, or the pressure in the adjacent chamber 10 is decreased by flowing out gas from the adjacent chamber 10.
  • the pressurizing port 13 is formed in the chamber lower part 6b, from which gas can be injected into the adjacent chamber 10.
  • the valve 14 opens and closes the piping to adjust the gas injection into the adjacent chamber 10 and the gas outflow from the adjacent chamber.
  • the opening 15 is for opening the valve 14 and releasing it into the gas atmosphere of the adjacent chamber 10.
  • the gas cylinder 16 is a gas supply source to the adjacent chamber 10, and gas is injected into the adjacent chamber 10 through the valve 15 and the pressure port 13.
  • the gas in the bonding chamber 9 is released from the decompression port 8 by pressurization from the adjacent chamber 10. After the Si wafer 1 and the glass substrate 2 are in contact with each other, the Si wafer 1 and the glass substrate 2 are bonded together as the transfer film 7 is stretched by the inflow of gas into the adjacent chamber 10, and the bonding area between the two is determined. growing.
  • FIG. 4B after the bonding between the plurality of Si wafers 1 and the glass substrate 2 is completed, a gas is caused to flow into the bonding chamber 9 through the decompression port 8 and the valve 14 is opened to open the pressure port. Gas is allowed to flow out from the adjacent chamber 10 through the opening 13 and the opening 15.
  • the adhesion between the transport film 7 and the Si wafer 1 is released.
  • the bonded substrate produced by bonding the plurality of Si wafers 1 and the glass substrate 2 is taken out from the bonding chamber 9, and the new glass substrate 2 is held in the chamber upper portion 6a.
  • the next Si wafer 1 disposed on the transport film 7 is moved by rotating the feed roll 3 and the take-up roll 4 and moving the transport film 7. It can be transferred into the chamber 6.
  • FIG. Finer control can be performed by combining the decompression of the bonding chamber 9 described in the first embodiment with the pressurization of the adjacent chamber 10.
  • the present invention is not limited to this, for example, an object that thermally expands. Is disposed in advance in the adjacent chamber 10, and when the transport film 7 is to be pushed up toward the bonding chamber, the object is expanded to increase the volume of the adjacent chamber 10. Push-up may be realized.
  • a heat source that can be controlled is mounted on the object, and heat can be applied to the object by supplying electric power to the heat source during expansion.
  • the volume reduction of the bonding chamber of the first embodiment is not limited to that due to deaeration, but may be one that utilizes expansion / contraction due to heat as described above.
  • FIG. 5 is a diagram showing a configuration of the bonding apparatus 22 according to one embodiment (third embodiment) of the present invention.
  • the transfer film 7 that divides the chamber 6 into the bonding chamber 9 and the adjacent chamber 10 is the first except for the configuration in which the glass substrate 2 is inclined in the chamber 6. This is the same as in the first embodiment.
  • each of the chamber upper part 6a and the chamber lower part 6b has a first side part in contact with one side of the transport film 7 and a second side part in contact with the other side.
  • the first side portion and the second side portion of the chamber upper portion 6a are configured with different heights, and the first side portion and the second side portion of the chamber lower portion 6b are configured with different heights.
  • the total height of the first side portion of 6a and the first side portion of the lower chamber portion 6b is equal to the total height of the second side portion of the upper chamber portion 6a and the second side portion of the lower chamber portion 6b. It is configured as follows. Thereby, the conveyance film 7 can be inclined with respect to the glass substrate 2. At this time, the plurality of Si wafers 1 disposed on the transfer film 7 in the bonding chamber 9 are inclined with respect to the glass substrate 2.
  • FIG. 7 is a diagram showing adhesion between the Si wafer 1 and the glass substrate 2 according to the first embodiment.
  • the Si wafer 1 is first brought into contact with the glass substrate 2 from the Si wafer 1 arranged at the center of the portion of the transport film 7 where the chamber 6 is divided, and the Si wafer 1 contacts the glass substrate 2 in parallel. This is because the central portion of the transport film in the chamber 6 rises when the pressure in the bonding chamber 9 is reduced.
  • the transport film 7 in the chamber 6 other than the central portion is inclined with respect to the glass substrate 2. Therefore, the Si wafer 1 other than the Si wafer 1 located in the central portion comes into contact with the glass substrate 2 from the end portion of the Si wafer 1 while being inclined with respect to the glass substrate 2.
  • the Si wafer 1 at the end closest to the glass substrate 2 (the left end in FIG. 6B and FIG. 8).
  • the Si wafer 1 comes into contact with the glass substrate 2 from the end of the Si wafer 1 in a state where the Si wafer 1 is inclined with respect to the glass substrate 2.
  • FIG. 9A is a diagram showing that the Si wafer 1 comes into contact with the glass substrate 2 from the end and the adhesion region is enlarged
  • FIG. 9B is a diagram showing that the Si wafer 1 is glass substrate 2. It is a figure showing that an adhesion
  • the adhesion between the Si wafer 1 and the glass substrate 2 proceeds from the end toward the center. If the bonding between the Si wafer 1 and the glass substrate 2 proceeds from one end to the other end, the bonding ends. In this case, since the adhesion expands only from the end portion of the Si wafer 1 that is in contact with the glass substrate 2, there is no occurrence of air accumulation by colliding with another adhesion. Therefore, it is possible to ensure good adhesion and high yield.
  • the Si wafer 1 that contacts the glass substrate 2 in parallel is the Si wafer 1 disposed in the central portion of the transfer film 7 in the chamber 6.
  • the first embodiment since the Si wafer 1 and the glass substrate 2 are bonded to each other in the area other than the central portion and started from the end of the Si wafer 1, it is possible to perform high-quality bonding with no air accumulation. is there.
  • the first embodiment is a configuration in which no air pocket is formed. Compared to the embodiment, an adhesive substrate that does not cause poor adhesion can be more efficiently produced.
  • the transport film 7 is inclined so that the left side of the transport film 7 in the chamber 9 has a higher relative height than the right side.
  • An inclination may be formed in the transport film 7 so that the relative height is higher than that on the left side.
  • the present invention is not limited to this, and this side You may comprise so that inclination may be given to the other side orthogonal to this, or both.
  • FIG. 10 is a modification of the bonding apparatus 22 according to this embodiment.
  • the glass substrate 2 is held in the chamber 6 so that the glass substrate 2 is inclined with respect to the Si wafer 1 disposed on the transfer film 7.
  • the adhesion chamber 9 is depressurized, and the transfer film 7 in the chamber 6 is stretched to bond the Si wafer 1 and the glass substrate 2 from the end of the Si wafer 1 in an inclined state. Therefore, the same effect as in the third embodiment can be obtained.
  • FIG. 11A to 11D are views for explaining each step of the bonding method according to the fourth embodiment.
  • the same reference numerals are given to those having the same functions as those described in the first embodiment, and the explanation thereof is omitted.
  • the configuration of the bonding apparatus 23 provided with a substrate stage 30 (holding means), a peeling guide 31 (peeling means), a push-up pin 32 (sheet expansion / contraction means) and a stage 33 is shown. ing.
  • the glass substrate 2 is held on the substrate stage 30, and peeling guides 31 are installed on the left and right sides of the substrate stage 30.
  • the peeling guide 31 is for releasing the contact between the transport film 7 and the Si wafer 1 after the adhesion between the Si wafer 1 and the glass substrate 2 is completed.
  • the substrate stage 30 holding the glass substrate 2 and the push-up pin 32 face each other through the transfer film 7.
  • the push-up pins 32 are formed on the stage 33 and can push up the transfer film 7 and the Si wafer 1 disposed on the film. Further, since the transport film 7 has stretchability at least in part, it is extended by being pushed up by the push-up pin 32.
  • the stage 33 may be provided with movable means.
  • the delivery roll 3 and the take-up roll 4 are rotated, the transport film 7 is moved, the Si wafer 1 and the glass substrate 2 are directly opposed, and the push-up pin 32 is used for transport.
  • the film 7 is adjusted so as to face the Si wafer through the film 7.
  • the push-up pins 32 are lowered, and the contact between the transport film 7 and the push-up pins 32 is released. Furthermore, the contact between the Si wafer 1 and the transport film 7 can be released by bringing the peeling guide 31 into contact with the transport film 7 and applying pressure downward. When the contact between the Si wafer 1 and the transport film 7 is released, the transport film 7 returns to its original state due to its own elasticity. Therefore, an adhesive substrate in which the Si wafer 1 and the glass substrate 2 are bonded can be obtained.
  • the peeling guide 31 is pulled upward to release the pressure on the transport film 7. Then, when the produced bonded substrate is taken out from the substrate stage 30 and the bonding process is continued, a new glass substrate 2 is held on the substrate stage 30.
  • the Si wafer 1 is placed on the transport film 7 by using the transport robot 5, and the feed roller 3 and the take-up roller 4 are rotated together to thereby rotate the Si wafer 1. Is moved until it faces the glass substrate 2. By doing so, a new adhesive substrate can be produced.
  • the same number of push-up pins 32 as the number of Si wafers 1 to be bonded to the glass substrate 2 are shown, but the number of push-up pins 32 is not limited.
  • the push-up pin 32 may be installed in the chamber lower part 6b of FIG. 1 etc. instead of the pressure changing means.
  • the peeling guides 31 are arranged on the left and right sides of the substrate stage 30, but it is not necessary to arrange them on both the left and right sides, and may be arranged on either one.
  • the Si wafer 1 disposed on the transport film 7 may be configured to be inclined with respect to the glass substrate 2, and the glass substrate 2 may be disposed on the Si wafer 1 disposed on the transport film 7.
  • the glass substrate 2 may be held on the substrate stage 30 so that the angle is inclined. As a result, it is possible to prevent air bubbles from being mixed into the adhesion region as in the third embodiment.
  • the bonding apparatus has a sheet that can be stretched at least in part and on which a first substrate can be disposed, and a second substrate that is an adhesion target of the first substrate.
  • the sheet since the sheet has elasticity at least in part, the sheet expands toward the holding means by the sheet expansion / contraction means.
  • the sheet can be brought close to the second substrate disposed on the holding means.
  • the first substrate can be brought closer to the second substrate arranged on the holding means as the sheet extends.
  • the first substrate and the second substrate can be brought into contact with each other by bringing the two substrates close to each other.
  • the first substrate moves together with the sheet, so that the sheet expansion / contraction means does not directly contact the first substrate. For this reason, even if lift pins are used as the sheet expansion / contraction means, there is no need to worry about damage to the first substrate. Further, since the first substrate moves together with the sheet, the movement can be stably performed.
  • the sheet in addition to the above-described configuration, is configured in a band shape, and a holding region that is opposed to the holding unit and that is adjacent to the holding region.
  • a non-facing area not facing the means, and the bonding apparatus moves the sheet by moving the sheet to a substrate delivery section that places the first substrate in the non-facing area.
  • Moving means for conveying the first substrate arranged by the delivery section so as to face the second substrate, and the moving means moves the belt-like sheet by rotating. It is preferably a rotating part.
  • the first substrate is arranged using the substrate delivery unit in the non-facing region of the sheet that is not directly opposed to the holding unit, and the arranged first substrate is moved to the second substrate by the moving unit. It can be conveyed so as to face to.
  • the first substrate placed on the sheet can be moved by rotating the belt-shaped sheet, so that the first substrate faces the second substrate without providing a complicated mechanism. Can be conveyed.
  • the stage for placing the substrate does not need to be moved back and forth between the place where the substrate is placed and the place where the substrate is bonded, and the first step is performed by progressive feeding.
  • the substrate can be continuously transferred so that the first substrate faces the second substrate. That is, immediately after the bonding is completed, the first substrate to be bonded next can be transported so that the first substrate faces the second substrate, so that the manufacturing time of the bonded substrate can be shortened and the manufacturing efficiency can be improved. be able to.
  • the holding means arranges the sheet therein, and the sheet is adjacent to the bonding chamber and the bonding chamber by the sheet.
  • a chamber divided into a chamber is formed, and the chamber is configured to adhere the first substrate disposed on the sheet and the second substrate disposed in the chamber in a certain bonding chamber.
  • the sheet expansion / contraction means extends the sheet by performing at least one of depressurization of the bonding chamber and pressurization of the adjacent chamber, and is arranged on the sheet in the certain bonding chamber.
  • the pressure change means is preferably a pressure changing means for bringing the first substrate close to the second substrate and bonding the first substrate to the second substrate.
  • the inside of the chamber can be divided into an adhesion chamber and an adjacent chamber adjacent to the adhesion chamber.
  • the sheet normally exists in the bonding chamber and the boundary between the adjacent chambers and is not stretched.
  • the sheet has elasticity at least partially. Therefore, when at least one of depressurization of the bonding chamber and pressurization of the adjacent chamber is performed by the pressure changing means, the sheet in a normal state is adjacent to the sheet as a boundary. Due to the difference between the internal pressures of the two chambers, a force that is pulled or pushed out toward one of the chambers acts to deform so as to extend toward one of the chambers.
  • the sheet can be brought close to the second substrate disposed in the one chamber.
  • the first substrate can be brought closer to the second substrate arranged in the chamber as the sheet is extended.
  • the first substrate and the second substrate can be brought into contact with each other by bringing the two substrates close to each other.
  • the first substrate and the second substrate are bonded, and then a force is applied to the sheet to extend the sheet. It is preferable to provide a peeling means for shrinking the sheet and separating the sheet from the first substrate.
  • the first substrate is left on the second substrate side, and only the sheet is returned to the original state using the peeling means.
  • the first substrate can be removed from the sheet.
  • the pressure changing unit may bond the first substrate and the second substrate, then pressurize the bonding chamber, and It is preferable that the extension sheet is contracted to separate the sheet and the first substrate by performing at least one of decompression of the adjacent chambers.
  • the first substrate is left on the second substrate side, and only the sheet is returned to the original state using the pressure changing means.
  • the first substrate can be removed from the sheet.
  • the pressure change unit is configured to extend the sheet by pressurizing the adjacent chamber, and the pressure change unit includes the above-described configuration.
  • the pressurization is preferably performed by flowing a gas into the adjacent chamber from the outside of the adjacent chamber.
  • the first substrate when the first substrate and the second substrate start to contact with each other, the first substrate becomes the second substrate. It is preferable that it is comprised so that it may become the state inclined with respect to.
  • the first substrate is inclined with respect to the second substrate, it is possible to start contact with the second substrate from the end portion of the first substrate.
  • the adhesion proceeds in the direction in which the adhesion area expands from the end of the first substrate. Since the enlargement of the adhesion region occurs only from the end of the first substrate, when a plurality of adhesion regions occur simultaneously on one first substrate, the region and the region when these regions are combined into one at the final stage. It is difficult to form defects such as air traps that occur at the boundary between the two and the defective adhesion.
  • the holding means is configured such that the second substrate is the first substrate when the second substrate and the first substrate start to contact each other. It is preferable to hold the second substrate so as to be inclined with respect to.
  • the second substrate since the second substrate is inclined with respect to the first substrate, the second substrate can be brought into contact with the end portion of the first substrate.
  • the adhesion proceeds in the direction in which the adhesion area expands from the end of the first substrate. Since the enlargement of the adhesion region occurs only from the end of the first substrate, when a plurality of adhesion regions occur simultaneously on one first substrate, the region and the region when these regions are combined into one at the final stage. It is difficult to form defects such as air traps that occur at the boundary between the two and the effect of poor adhesion.
  • a semiconductor substrate can be used as the first substrate, and an insulator substrate can be used as the second substrate.
  • the bonding apparatus since the bonding apparatus does not have a complicated mechanism, the cost of the bonding apparatus can be reduced. Therefore, there is an effect that an inexpensive SOI (silicon on insulator) substrate can be manufactured.
  • SOI silicon on insulator
  • the present invention also includes an adhesive substrate manufactured by using the bonding apparatus having the above-described configuration, in which the first substrate and the second substrate are bonded.
  • the present invention can be used for manufacturing an SOI substrate by bonding a plurality of semiconductor substrates to an insulator substrate.

Abstract

A bonding device (20) according to an embodiment of the present invention is provided with: a transporting film (7) which is elastic and on which an Si wafer (1) can be disposed; a chamber (6) which is divided into a bonding chamber (9) and an adjoining chamber (10), the bonding chamber (9) being configured to bond the Si wafer (1) to a glass substrate (2); and a pressure change means which decreases the pressure in the bonding chamber (9) to cause the transporting film (7) to extend so that the Si wafer (1) is brought into contact with the glass substrate (2).

Description

接着装置およびそれを用いて作製した接着基板Bonding apparatus and bonded substrate manufactured using the same
　本発明は、例えば絶縁体基板に複数の半導体基板を接着させるために使用することができる接着装置、およびこの接着装置を用いて作製される接着基板に関する。 The present invention relates to a bonding apparatus that can be used for bonding a plurality of semiconductor substrates to, for example, an insulating substrate, and a bonding substrate manufactured using the bonding apparatus.
　中小型ＬＣＤ（液晶ディスプレイ）用のＴＦＴ（薄膜トランジスタ）としては、多結晶Ｓｉである低温ポリシリコンが主流となっているが、低温ポリシリコンは結晶粒径が小さいため、特性のバラツキが大きくなる。結晶粒径のない単結晶を形成することによって、バラツキを小さくすることができるが、通常の成膜方法を用いて、大型基板上に単結晶Ｓｉを形成することは困難である。そこで、ガラス基板上に、単結晶Ｓｉウエハーを貼り付ける技術の検討が行われている。 As a TFT (thin film transistor) for small and medium-sized LCDs (liquid crystal displays), low-temperature polysilicon, which is polycrystalline Si, is the mainstream, but low-temperature polysilicon has a small crystal grain size, so that the variation in characteristics increases. Although the variation can be reduced by forming a single crystal having no crystal grain size, it is difficult to form single crystal Si on a large substrate using a normal film formation method. Therefore, a technique for attaching a single crystal Si wafer on a glass substrate has been studied.
　例えば、特許文献１には、複数のドナー半導体ウエハーのそれぞれの第一の表面をガラス基板と接触させ；電解を用いて、複数のドナー半導体ウエハーの第一の表面をガラス基板と結合させ；ガラス基板から複数のドナー半導体ウエハーを分離して、ガラス基板に結合したそれぞれの剥離層を残し；剥離層の露出表面上にさらに別の半導体層を成膜して、剥離層の厚さを増加させる各工程を有してなる方法および装置が記載されている。 For example, Patent Document 1 discloses that a first surface of each of a plurality of donor semiconductor wafers is brought into contact with a glass substrate; first surfaces of the plurality of donor semiconductor wafers are bonded to the glass substrate using electrolysis; Separating multiple donor semiconductor wafers from the substrate, leaving each release layer bonded to the glass substrate; depositing another semiconductor layer on the exposed surface of the release layer to increase the thickness of the release layer A method and apparatus comprising each step is described.
　また、大型のガラス基板に、より小さなＳｉウエハーを複数貼り付ける接着装置は、現在実用化されていないが、治具にそれぞれＳｉウエハーを並べた後、一気にガラス基板に貼り付ける方法が考えられており、例えば、特許文献２に記載されている。 In addition, an adhesive device for attaching a plurality of smaller Si wafers to a large glass substrate has not been put to practical use at present, but a method of adhering Si wafers to a glass substrate at a stretch after arranging each Si wafer on a jig is considered. For example, it is described in Patent Document 2.
　特許文献２には、第１の基板支持台上に複数の半導体基板を設け、第２の基板支持台上にベース基板を設け、複数の半導体基板の表面とベース基板の表面が所定の間隔をもって対向するように、第１の基板支持台の上方に第２の基板支持台を配置し、複数の半導体基板又はベース基板に帯電させ、複数の半導体基板の表面とベース基板の表面の間隔を狭めることにより、ベース基板の表面に複数の半導体基板を接触させ、ベース基板の表面と複数の半導体基板の表面を接合させることを特徴とするＳＯＩ基板の作製方法が記載されている。 In Patent Document 2, a plurality of semiconductor substrates are provided on a first substrate support, a base substrate is provided on a second substrate support, and the surface of the plurality of semiconductor substrates and the surface of the base substrate are spaced apart from each other by a predetermined distance. A second substrate support is disposed above the first substrate support so as to face each other, and the plurality of semiconductor substrates or the base substrate is charged to narrow the distance between the surfaces of the plurality of semiconductor substrates and the base substrate. Thus, a method for manufacturing an SOI substrate is described, in which a plurality of semiconductor substrates are brought into contact with the surface of the base substrate, and the surfaces of the base substrate and the surfaces of the plurality of semiconductor substrates are bonded.
日本国公表特許公報「特表２００９－５１６９２９号公報（公表日：２００９年４月２３日）」Japanese Patent Gazette “Special Table 2009-516929 (Publication Date: April 23, 2009)” 日本国公開特許公報「特開２００９－２３１８１９号公報（公開日：２００９年１０月８日）」Japanese Patent Publication “JP 2009-231819 A (publication date: October 8, 2009)”
　特許文献１には、複数のドナー半導体ウエハーをガラス基板と結合させる装置が製造される絶縁体上半導体の特徴に基づいて記載されているが、具体的な装置構成は記載されていない。そのため、効率的に複数のドナー半導体ウエハーを結合したガラス基板を製造する装置について、別途検討する必要がある。 Patent Document 1 describes the characteristics of a semiconductor-on-insulator in which a device for bonding a plurality of donor semiconductor wafers to a glass substrate is manufactured, but does not describe a specific device configuration. Therefore, it is necessary to separately examine an apparatus for manufacturing a glass substrate in which a plurality of donor semiconductor wafers are efficiently bonded.
　特許文献２に記載されているように、リフトピンに、直接、半導体基板を載せてリフトアップさせる構成となっているので、不安定であり、また、リフトピンと接触することによる傷付きが懸念される。また、リフトピン等を備えている機械的かつ複雑なステージを有する必要があるため、複雑かつ高価な接着装置となるという問題がある。 As described in Patent Document 2, the semiconductor substrate is directly mounted on the lift pins and lifted up. Therefore, the semiconductor substrate is unstable, and there is a concern about damage due to contact with the lift pins. . Moreover, since it is necessary to have a mechanical and complicated stage provided with a lift pin etc., there exists a problem that it becomes a complicated and expensive bonding apparatus.
　本発明は、上記課題に鑑みてなされたものであり、簡単な装置構成を用いることによって、接着装置のコストを下げることを目的としている。 The present invention has been made in view of the above problems, and aims to reduce the cost of the bonding apparatus by using a simple apparatus configuration.
　そこで、上記の課題を解決するために、本発明に係る接着装置は、
　少なくとも一部分に伸縮性を有しており、第一の基板を配することができるシートと、
　上記第一の基板の接着対象である第二の基板を配することができる保持手段と、
　上記シートを伸長させて、当該シートを配した上記第一の基板を上記第二の基板に近づけて、第一の基板を第二の基板に接着させるシート伸縮手段と、
を備えていることを特徴としている。 Therefore, in order to solve the above problems, the bonding apparatus according to the present invention is:
A sheet having stretchability at least in part and on which the first substrate can be disposed;
Holding means capable of arranging a second substrate to be bonded to the first substrate;
Sheet stretching means for extending the sheet, bringing the first substrate on which the sheet is disposed closer to the second substrate, and bonding the first substrate to the second substrate;
It is characterized by having.
　上記構成によれば、シートは少なくとも一部分に伸縮性を有しているため、上記シート伸縮手段によって、上記シートが保持手段に向かって伸長する。 According to the above configuration, since the sheet has elasticity at least in part, the sheet expands toward the holding means by the sheet expansion / contraction means.
　このようにシートを保持手段側に伸長させることにより、保持手段に配した第二の基板にシートを近づけることができる。 In this way, by extending the sheet toward the holding means, the sheet can be brought close to the second substrate disposed on the holding means.
　この原理を利用し、当該シートに第一の基板を配しておくことにより、シートの伸長に伴って、保持手段に配した第二の基板に当該第一の基板を近づけることができる。上記のように、両基板を近づけることによって、第一の基板と第二の基板とを接触させることができる。 By using this principle and arranging the first substrate on the sheet, the first substrate can be brought closer to the second substrate arranged on the holding means as the sheet extends. As described above, the first substrate and the second substrate can be brought into contact with each other by bringing the two substrates close to each other.
　これにより、シート伸縮手段により第一の基板を第二の基板に近づける際に、シートごと第一の基板が移動するので、シート伸縮手段が直接第一の基板に接触することがない。このため、シート伸縮手段としてリフトピンを用いたとしても第一の基板への傷付きを懸念する必要がない。また、シートごと第一の基板が移動するので、当該移動を安定的に実施することができる。 Thus, when the first substrate is moved closer to the second substrate by the sheet expansion / contraction means, the first substrate moves together with the sheet, so that the sheet expansion / contraction means does not directly contact the first substrate. For this reason, even if lift pins are used as the sheet expansion / contraction means, there is no need to worry about damage to the first substrate. Further, since the first substrate moves together with the sheet, the movement can be stably performed.
　本発明は、上記の構成の接着装置を用いて製造される、上記第一の基板と上記第二の基板とが接着した接着基板も含む。 The present invention also includes an adhesive substrate manufactured by using the bonding apparatus having the above-described configuration, in which the first substrate and the second substrate are bonded.
　上記構成によれば、複雑な機構を有していない上記接着装置を用いているため、安価な接着基板を作製することができるという効果を奏する。 According to the above configuration, since the above-described bonding apparatus that does not have a complicated mechanism is used, there is an effect that an inexpensive bonded substrate can be manufactured.
　本発明に係る接着装置は、少なくとも一部分に伸縮性を有しており、第一の基板を配することができるシートと、上記第一の基板の接着対象である第二の基板を配することができる保持手段と、上記シートを伸長させて、当該シートを配した上記第一の基板を上記第二の基板に近づけて、第一の基板を第二の基板に接着させるシート伸縮手段と、を備えている。 The bonding apparatus according to the present invention has a sheet that can be stretched at least in part and on which a first substrate can be disposed, and a second substrate that is an adhesion target of the first substrate. Holding means capable of extending the sheet, the sheet expansion means for extending the sheet, bringing the first substrate on which the sheet is disposed closer to the second substrate, and bonding the first substrate to the second substrate; It has.
　そのため、簡単な装置構成が可能であり、かつ接着装置のコストを下げることができるという効果を奏する。 Therefore, there is an effect that a simple device configuration is possible and the cost of the bonding device can be reduced.
　また本発明には、上記の構成の接着装置を用いて製造される接着基板も含まれる。 The present invention also includes an adhesive substrate manufactured using the adhesive device having the above configuration.
本発明に係る接着装置の第１実施形態に係る模式図である。It is a mimetic diagram concerning a 1st embodiment of an adhesion device concerning the present invention. （ａ）～（ｅ）は、第１実施形態に係る接着方法の各工程を説明するための図である。(A)-(e) is a figure for demonstrating each process of the adhesion | attachment method based on 1st Embodiment. （ａ）は、搬送用フィルムの変形例を表す平面図であり、（ｂ）は、本発明に係る搬送用フィルムの変形例を表す正面図である。(A) is a top view showing the modification of the film for conveyance, (b) is a front view showing the modification of the film for conveyance concerning this invention. （ａ）～（ｃ）は、第２実施形態に係る接着方法の各工程を説明するための図である。(A)-(c) is a figure for demonstrating each process of the adhesion | attachment method based on 2nd Embodiment. 本発明に係る接着装置の第３実施形態に係る模式図である。It is a mimetic diagram concerning a 3rd embodiment of the adhesion device concerning the present invention. （ａ）～（ｄ）は、第３実施形態に係る接着方法の各工程を説明するための図である。(A)-(d) is a figure for demonstrating each process of the adhesion | attachment method based on 3rd Embodiment. 第１実施形態に係るＳｉウエハーとガラス基板との接着を表す図である。It is a figure showing adhesion | attachment of Si wafer and glass substrate which concern on 1st Embodiment. 第３実施形態に係るＳｉウエハーとガラス基板との接着を表す図である。It is a figure showing adhesion | attachment of the Si wafer and glass substrate which concern on 3rd Embodiment. （ａ）Ｓｉウエハーがガラス基板に端から接触して接着領域が拡大する図、および（ｂ）Ｓｉウエハーがガラス基板に平行に接触して接着領域が拡大する図を表す。(A) The figure which a Si wafer contacts a glass substrate from an end, and the adhesion area expands, and (b) The figure where a Si wafer contacts a glass substrate in parallel and the adhesion area expands is represented. 第３実施形態に係る接着装置の変形例に係る模式図である。It is a mimetic diagram concerning the modification of the adhesion device concerning a 3rd embodiment. （ａ）～（ｄ）は、第４実施形態に係る接着方法の各工程を説明するための図である。(A)-(d) is a figure for demonstrating each process of the adhesion | attachment method based on 4th Embodiment.
　〔第１実施形態〕
　以下、本発明の一実施形態について、詳細に説明する。 [First Embodiment]
Hereinafter, an embodiment of the present invention will be described in detail.
　（接着装置の構成）
　図１は、本発明に係る接着装置の一実施形態である接着装置２０の模式図である。接着装置２０は、図１に示すように、送り出しロール３（移動手段、回転部）、巻き取りロール４（移動手段、回転部）、搬送ロボット５（基板配送部）、チャンバー上部６ａ（チャンバーの接着室の一部）、チャンバー下部６ｂ（チャンバーの隣接室の一部）、搬送用フィルム７（シート）、減圧口８、および、圧力変化手段（図示せず）を備えている。 (Configuration of bonding equipment)
FIG. 1 is a schematic view of a bonding apparatus 20 that is an embodiment of a bonding apparatus according to the present invention. As shown in FIG. 1, the bonding apparatus 20 includes a feed roll 3 (moving means, rotating part), a take-up roll 4 (moving means, rotating part), a transfer robot 5 (substrate delivery part), and an upper chamber 6a (chamber of the chamber). A part of the bonding chamber), a chamber lower part 6b (a part of the chamber adjacent to the chamber), a transport film 7 (sheet), a decompression port 8, and a pressure changing means (not shown) are provided.
　接着装置２０は、上述した従来構成と同様に基板同士を接着するために用いられる装置である。本実施形態においては、複数のＳｉウエハー１（第一の基板、半導体基板）とガラス基板２（第二の基板、絶縁体基板）とを接着させるために用いられている。 The bonding apparatus 20 is an apparatus used for bonding substrates together as in the conventional configuration described above. In the present embodiment, it is used for bonding a plurality of Si wafers 1 (first substrate, semiconductor substrate) and glass substrate 2 (second substrate, insulator substrate).
　搬送用フィルム７は、複数のＳｉウエハー１を配置させるためのものであり、図１においては、搬送用フィルム７上に三枚のＳｉウエハー１が一組で配置されている。この一組のＳｉウエハー１が一枚のガラス基板２と接着する。なお、一組で配置されるＳｉウエハー１は一枚もしくは二枚であってもよく、または三枚以上であってもよい。また、搬送用フィルム７は奥行きを有するものであり、図示されているＳｉウエハー１の奥に、さらにＳｉウエハー１が配置されていてもよい。搬送用フィルム７はＳｉウエハー１との接着性を維持するため、適度な粘着性を有していることが好ましい。 The transfer film 7 is for arranging a plurality of Si wafers 1. In FIG. 1, three Si wafers 1 are arranged as a set on the transfer film 7. This set of Si wafers 1 is bonded to a single glass substrate 2. The Si wafers 1 arranged in a set may be one or two, or three or more. Moreover, the film 7 for conveyance has depth, and the Si wafer 1 may be arrange | positioned in the back of the Si wafer 1 shown in figure. In order to maintain the adhesiveness with the Si wafer 1, the transport film 7 preferably has appropriate tackiness.
　チャンバー上部６ａとチャンバー下部６ｂとはチャンバー６（図２の（ｂ））を構成する。チャンバー上部６ａとチャンバー下部６ｂとは、図示しない装置を用いて相対位置を移動させて、互いに離間したり接触したりすることができる。チャンバー上部６ａとチャンバー下部６ｂとが接触した場合には、或る内部空間を有したチャンバーが形成される。 The chamber upper portion 6a and the chamber lower portion 6b constitute a chamber 6 ((b) in FIG. 2). The chamber upper portion 6a and the chamber lower portion 6b can be moved away from each other or brought into contact with each other by moving their relative positions using an apparatus (not shown). When the chamber upper portion 6a and the chamber lower portion 6b come into contact with each other, a chamber having a certain internal space is formed.
　チャンバー６の内部には、ガラス基板２が保持されている。つまり、搬送用フィルム７に配置された複数のＳｉウエハー１とチャンバー６内部に保持されたガラス基板２との接着は、チャンバー６内において行われる。 The glass substrate 2 is held inside the chamber 6. That is, adhesion between the plurality of Si wafers 1 arranged on the transfer film 7 and the glass substrate 2 held inside the chamber 6 is performed in the chamber 6.
　チャンバー６は、チャンバー上部６ａとチャンバー下部６ｂとの間に延設している搬送用フィルム７を挟みこむことによって、上記内部空間が分断されて接着室９と隣接室１０とが設けられることになる。 The chamber 6 is provided with an adhesive chamber 9 and an adjacent chamber 10 by dividing the internal space by sandwiching a transfer film 7 extending between the chamber upper portion 6a and the chamber lower portion 6b. Become.
　接着室９は、チャンバー上部６ａと搬送用フィルム７によって構成される室である。また、接着室９において、複数のＳｉウエハー１とガラス基板２とは接着され、接着基板が作製される。詳細は後述する。 The bonding chamber 9 is a chamber constituted by the chamber upper portion 6 a and the transport film 7. Further, in the bonding chamber 9, the plurality of Si wafers 1 and the glass substrate 2 are bonded to produce an bonded substrate. Details will be described later.
　隣接室１０は、チャンバー下部６ｂと搬送用フィルム７によって構成される室である。 Adjacent room 10 is a room constituted by chamber lower part 6 b and transport film 7.
　搬送用ロボット５は、昇降することによってＳｉウエハー１を搬送用フィルム７上に配置するためのものである。また、搬送用フィルム７はチャンバー６外部に外延されており、Ｓｉウエハー１の配置はチャンバー６の外部において行われる。 The transport robot 5 is for placing the Si wafer 1 on the transport film 7 by moving up and down. Further, the transfer film 7 is extended outside the chamber 6, and the Si wafer 1 is placed outside the chamber 6.
　減圧口８は接着室９内の気体を吸引するため、または接着室９に気体を放出するためにチャンバー上部６ａに設けられている。例えば、接着室９を減圧する（真空引きする）ために、接着室９の気体を吸引するか、または搬送用フィルム７を介して接着室９の気体が加圧されているときに当該気体が接着室９から放出する。 The decompression port 8 is provided in the chamber upper part 6a in order to suck the gas in the bonding chamber 9 or to release the gas to the bonding chamber 9. For example, in order to depressurize (evacuate) the bonding chamber 9, the gas in the bonding chamber 9 is sucked, or when the gas in the bonding chamber 9 is pressurized through the transfer film 7, Released from the bonding chamber 9.
　図示しない上記圧力変化手段は、接着室９内の圧力を変化させるものである。上記減圧口８と接続しており、接着室９の気体を吸引することによって接着室９の圧力を減少させたり、または接着室９に気体を送出することによって接着室９の圧力を増加させたりすることができる。 The pressure changing means (not shown) is for changing the pressure in the bonding chamber 9. The pressure reducing port 8 is connected and the pressure in the bonding chamber 9 is decreased by sucking the gas in the bonding chamber 9 or the pressure in the bonding chamber 9 is increased by sending the gas to the bonding chamber 9. can do.
　送り出しロール３および巻き取りロール４は、ともに帯状の搬送用フィルム７の末端内部に位置している。上記２つのロールは、水平面に対して略同じ高さにあり、形状も同様である。上記２つのロールは、回転することによって搬送用フィルム７を移動させることができる。また、搬送用フィルム７を移動させることによって、チャンバー６外部にある搬送用フィルム７の一領域（ガラス基板２に正対していない非正対領域）上に配置されたＳｉウエハー１をチャンバー６内まで移動させ、Ｓｉウエハー１とガラス基板２とを正対させることができる（ガラス基板２に正対する正対領域）。 The delivery roll 3 and the take-up roll 4 are both located inside the end of the belt-shaped transport film 7. The two rolls are at substantially the same height with respect to the horizontal plane and have the same shape. The two rolls can move the transport film 7 by rotating. Further, by moving the transfer film 7, the Si wafer 1 disposed on one region (a non-facing region not facing the glass substrate 2) outside the chamber 6 is placed in the chamber 6. It is possible to move the Si wafer 1 and the glass substrate 2 to face each other (a facing area facing the glass substrate 2).
　本実施形態では、送り出しロール３と巻き取りロール４とは、水平方向に沿って、チャンバー下部６ｂを挟んで配置されており、図１に示すように、垂直方向に隣り合う搬送用フィルム７と搬送用フィルム７との間にチャンバー下部６ｂが配置されている態様である。 In the present embodiment, the feed roll 3 and the take-up roll 4 are disposed along the horizontal direction with the chamber lower part 6b interposed therebetween, and as shown in FIG. In this embodiment, the chamber lower portion 6b is disposed between the transfer film 7 and the transfer film 7.
　搬送用フィルム７、送り出しロール３および巻き取りロール４の構成はベルトコンベアー、Ｒｏｌｌ－ｔｏ－Ｒｏｌｌ等の構成をとりうる。 The configuration of the transport film 7, the feed roll 3, and the take-up roll 4 can be a belt conveyor, a Roll-to-Roll, or the like.
　〔接着装置を用いた接着方法〕
　次に接着装置２０を用いたＳｉウエハー１とガラス基板２との接着方法を説明する。 [Adhesion method using an adhesion device]
Next, a method for bonding the Si wafer 1 and the glass substrate 2 using the bonding apparatus 20 will be described.
　図２の（ａ）～（ｅ）は、第１実施形態に係る接着方法の各工程を説明するための図である。接着方法の流れとしては、
工程１：搬送用フィルム７上へのＳｉウエハー１の配置、
工程２：搬送用フィルム７の移動によるＳｉウエハー１のチャンバー６内へのセット、
工程３：減圧による搬送用フィルム７の引き上げに伴うＳｉウエハー１とガラス基板２との接着、
工程４：減圧解除による搬送用フィルム７とＳｉウエハー１との剥離
の４つの工程がこの順でおこなわれる。以下に各工程について詳述する。 FIGS. 2A to 2E are views for explaining each step of the bonding method according to the first embodiment. As a flow of the bonding method,
Step 1: Arrangement of the Si wafer 1 on the transport film 7
Step 2: setting the Si wafer 1 into the chamber 6 by moving the transport film 7;
Step 3: Adhesion between the Si wafer 1 and the glass substrate 2 with the lifting of the transport film 7 by decompression,
Process 4: Four processes of peeling with the conveyance film 7 and Si wafer 1 by pressure reduction cancellation | release are performed in this order. Each step will be described in detail below.
　（工程１）
　まず、図２の（ａ）において、搬送用ロボット５を用いて、複数のＳｉウエハー１を所定の間隔においてチャンバー６の外部の搬送用フィルム７上に配置する。 (Process 1)
First, in FIG. 2A, a plurality of Si wafers 1 are arranged on a transport film 7 outside the chamber 6 at a predetermined interval by using a transport robot 5.
　Ｓｉウエハー１の配置に関しては、送り出しロール３および巻き取りロール４を回転させ、搬送用フィルム７を移動させた状態で行ってもよい。また、搬送用フィルム７に設置されるＳｉフィルム１の間隔を均等にするために、送り出しロール３および巻き取りロール４の回転速度は一定にし、搬送用フィルム７の移動を一定速度で行うことが好ましい。 The arrangement of the Si wafer 1 may be performed in a state where the feed roll 3 and the take-up roll 4 are rotated and the transport film 7 is moved. Further, in order to make the intervals between the Si films 1 installed on the transport film 7 uniform, the rotation speeds of the feed roll 3 and the take-up roll 4 are made constant, and the transport film 7 can be moved at a constant speed. preferable.
　また、送り出しロール３および巻き取りロール４の回転は、Ｓｉウエハー１の配置が終了した後に行ってもよい。このとき、複数のＳｉウエハー１を搬送用フィルム７に配置する必要があれば、搬送用ロボット５を搬送用フィルム７に対して水平に移動させて、Ｓｉウエハー１をそれぞれ配置する。 Further, the feed roll 3 and the take-up roll 4 may be rotated after the arrangement of the Si wafer 1 is completed. At this time, if it is necessary to place a plurality of Si wafers 1 on the transfer film 7, the transfer robot 5 is moved horizontally with respect to the transfer film 7 to place the Si wafers 1.
　（工程２）
　送り出しロール３および巻き取りロール４を回転させることによって、搬送用フィルム７を移動させて、搬送用フィルム７上に配置した複数のＳｉウエハー１をチャンバー上部６ａおよびチャンバー下部６ｂに向かって移動させることができる。 (Process 2)
By rotating the delivery roll 3 and the take-up roll 4, the transport film 7 is moved, and the plurality of Si wafers 1 arranged on the transport film 7 are moved toward the chamber upper portion 6a and the chamber lower portion 6b. Can do.
　チャンバー上部６ａに保持されているガラス基板２に接着させる複数のＳｉウエハー１が全てチャンバー上部６ａの下部に移動し、ガラス基板２と複数のＳｉウエハー１とが正対したときに、送り出しロール３および巻き取りロール４の回転を止めて、Ｓｉウエハー１が移動しないようにする。次に、チャンバー上部６ａおよびチャンバー下部６ｂが搬送用フィルム７を介して接触させるため、チャンバー上部６ａを下方に、かつチャンバー下部６ｂを上方に移動させる。また、チャンバー上部６ａまたはチャンバー下部６ｂのどちらか一方を移動させてもよい。 When all of the plurality of Si wafers 1 to be bonded to the glass substrate 2 held by the chamber upper portion 6a are moved to the lower portion of the chamber upper portion 6a and the glass substrate 2 and the plurality of Si wafers 1 face each other, the delivery roll 3 Then, the rotation of the take-up roll 4 is stopped so that the Si wafer 1 does not move. Next, the chamber upper portion 6a and the chamber lower portion 6b are brought into contact with each other via the transfer film 7, so that the chamber upper portion 6a is moved downward and the chamber lower portion 6b is moved upward. Moreover, you may move either the chamber upper part 6a or the chamber lower part 6b.
　図２の（ｂ）において、チャンバー上部６ａおよびチャンバー下部６ｂを、搬送用フィルム７を介して接触させることによって、チャンバー上部６ａと搬送用フィルム７とが接着室９を形成し、また、チャンバー下部６ｂと搬送用フィルム７とが隣接室１０を形成する。このとき、接着室９において、チャンバー上部６ａに保持されているガラス基板２と搬送用フィルム７に配置している複数のＳｉウエハー１とは正対している。 In FIG. 2B, the chamber upper portion 6a and the chamber lower film 6b are brought into contact with each other via the conveying film 7, whereby the chamber upper portion 6a and the conveying film 7 form an adhesion chamber 9. 6b and the film 7 for conveyance form the adjacent chamber 10. FIG. At this time, in the bonding chamber 9, the glass substrate 2 held in the chamber upper portion 6 a and the plurality of Si wafers 1 arranged on the transfer film 7 face each other.
　（工程３）
　図２の（ｃ）において、上記のようにガラス基板２と複数のＳｉウエハー１とが正対している状態において、減圧口８と接続した圧力変化手段を用いて、接着室９の減圧を行う。減圧は、減圧口８を通じて接着室９の気体が室外に吸引されることによって実現される。 (Process 3)
In FIG. 2C, in the state where the glass substrate 2 and the plurality of Si wafers 1 face each other as described above, the pressure in the bonding chamber 9 is reduced using pressure changing means connected to the pressure reducing port 8. . The decompression is realized by the gas in the bonding chamber 9 being sucked out through the decompression port 8.
　ここで、搬送用フィルム７は伸縮性を有している。具体的には、搬送用フィルム７として、ポリエステル、ポリカーボネイト、ポリエステルなどのフィルムや、シリコンゴムといった伸縮性、柔軟性のある材質のものを使用することができる。 Here, the transport film 7 has elasticity. Specifically, as the transport film 7, a film made of polyester, polycarbonate, polyester, or the like, or a stretchable and flexible material such as silicon rubber can be used.
　このように、搬送用フィルム７は伸縮性、柔軟性を有しているため、接着室９が減圧になることによって、上方に引き上げられる。そして、更に減圧することによって、搬送用フィルム７はより上方に引き上げられ、接着室９の容積は減少する。なお、搬送用フィルム７は全体が伸縮性を有している必要はない。 Thus, since the transport film 7 has elasticity and flexibility, it is pulled upward when the bonding chamber 9 is depressurized. Further, by further reducing the pressure, the transport film 7 is pulled up further, and the volume of the bonding chamber 9 is reduced. Note that the entire transport film 7 need not have elasticity.
　搬送用フィルム７は上方（接着室９側）に引き上げられるときには、搬送用フィルム７上に配置したＳｉウエハー１も同様に引き上げられる。ある程度Ｓｉウエハー１が引き上げられたとき、Ｓｉウエハー１とガラス基板２とは接触する。Ｓｉウエハー１がガラス基板２に接触した後も、接着室９の減圧を行うことによって、Ｓｉウエハー１および搬送用フィルム７を引き上げることによってＳｉウエハー１とガラス基板２との接着領域は拡大する。なお、接着領域とは、Ｓｉウエハー１とガラス基板２とが互いに接触し、接着している領域を指す。 When the transfer film 7 is pulled upward (on the bonding chamber 9 side), the Si wafer 1 disposed on the transfer film 7 is also lifted in the same manner. When the Si wafer 1 is pulled up to some extent, the Si wafer 1 and the glass substrate 2 come into contact with each other. Even after the Si wafer 1 comes into contact with the glass substrate 2, the adhesion region between the Si wafer 1 and the glass substrate 2 is expanded by pulling up the Si wafer 1 and the transfer film 7 by reducing the pressure in the bonding chamber 9. The adhesion region refers to a region where the Si wafer 1 and the glass substrate 2 are in contact with each other and bonded.
　減圧下において、Ｓｉウエハー１とガラス基板２との接着を行っているため、接着領域に気泡が混入することを防止した状態において、接着領域の面積を拡大することができる。全てのＳｉウエハー１とガラス基板２とが接着するまで、減圧を継続する。 Since the Si wafer 1 and the glass substrate 2 are bonded under reduced pressure, the area of the bonding region can be expanded in a state where air bubbles are prevented from entering the bonding region. The decompression is continued until all the Si wafers 1 and the glass substrate 2 are bonded.
　次に、ウエハ直接接合技術（Wafer Direct Bonding）を用いることによって、接着剤等を使用せずにＳｉウエハー１とガラス基板２とを直接接着できることを説明する。まず、酸などの化学薬品、純水等を用いてＳｉウエハー１およびガラス基板２の洗浄と表面処理とを行う。この処理によって、Ｓｉウエハー１およびガラス基板２の表面をわずかに酸化させて薄い酸化膜を形成すると共に、当該表面に多数の水酸基を付着させる処理が可能である。このような親水化処理することによって、Ｓｉウエハー１およびガラス基板２の表面は共に親水性を示す。また、ＵＶ光照射処理、オゾン水洗浄処理等を施すことによって、これらの表面を親水性にしてもよい。 Next, it will be described that the Si wafer 1 and the glass substrate 2 can be directly bonded without using an adhesive or the like by using the wafer direct bonding technique (Wafer Direct Bonding). First, cleaning and surface treatment of the Si wafer 1 and the glass substrate 2 are performed using a chemical such as acid, pure water, or the like. By this treatment, it is possible to slightly oxidize the surfaces of the Si wafer 1 and the glass substrate 2 to form a thin oxide film and to attach a large number of hydroxyl groups to the surfaces. By performing such a hydrophilic treatment, the surfaces of the Si wafer 1 and the glass substrate 2 are both hydrophilic. Further, these surfaces may be made hydrophilic by performing UV light irradiation treatment, ozone water cleaning treatment, or the like.
　そして、上記親水化処理を施したＳｉウエハー１およびガラス基板２の表面を重ね合わせることによって、Ｓｉウエハー１とガラス基板２とが勝手に接着する。そのため、Ｓｉウエハー１およびガラス基板２に大きな力を加えなくても、両者の接触面積を拡大させることによって、Ｓｉウエハー１およびガラス基板２を接着させた接着基板を得ることは可能である。 Then, by superimposing the surfaces of the Si wafer 1 and the glass substrate 2 subjected to the hydrophilic treatment, the Si wafer 1 and the glass substrate 2 are arbitrarily bonded. Therefore, it is possible to obtain an adhesive substrate in which the Si wafer 1 and the glass substrate 2 are bonded by enlarging the contact area between the Si wafer 1 and the glass substrate 2 without applying a large force to the Si wafer 1 and the glass substrate 2.
　なお、上記接着は、Ｓｉウエハー１上のＳｉ－Ｏ結合とガラス基板２のＳｉ－Ｏ結合との間に水素結合が生じることによって形成されると考えられている。また、上記接着によって得られた接着基板を熱処理することによって、接着基板の接着強度をさらに向上させることができる。 Note that it is considered that the above-mentioned adhesion is formed by a hydrogen bond generated between the Si—O bond on the Si wafer 1 and the Si—O bond on the glass substrate 2. Moreover, the adhesive strength of an adhesive substrate can be further improved by heat-processing the adhesive substrate obtained by the said adhesion | attachment.
　（工程４）
　図２の（ｄ）において、全てのＳｉウエハー１とガラス基板２との接着が終了した後、圧力変化手段を用いた減圧を終了し、今度は減圧口８を通じて気体を接着室９に流入させる。気体を流入させることによって、接着室９の容積は増加し、接着室９側に引き上げられていた搬送用フィルム７は、自身の伸縮性によって元の状態に戻る。ここで、Ｓｉウエハー１とガラス基板２との接着は搬送用フィルム７とＳｉウエハー１との粘性による接着よりも強固であるため、元の状態に戻る搬送用フィルム７からＳｉウエハー１は剥がれる。 (Process 4)
In FIG. 2D, after the bonding between all the Si wafers 1 and the glass substrate 2 is completed, the pressure reduction using the pressure changing means is terminated, and this time the gas is caused to flow into the bonding chamber 9 through the pressure reducing port 8. . By introducing the gas, the volume of the bonding chamber 9 increases, and the transport film 7 that has been pulled up toward the bonding chamber 9 returns to its original state due to its own stretchability. Here, since the adhesion between the Si wafer 1 and the glass substrate 2 is stronger than the adhesion due to the viscosity between the transport film 7 and the Si wafer 1, the Si wafer 1 is peeled off from the transport film 7 that returns to the original state.
　最後に、上記工程４の後工程である工程５として、チャンバー上部６ａおよびチャンバー下部６ｂを移動させることによって、チャンバー６を開放する。そして、図２の（ｅ）に示すように、作製された接着基板をチャンバー６ａから取り出す。接着処理を継続する場合には、新たなガラス基板２をチャンバー６ａに保持させる。また、チャンバー６の外部において、工程１と同様に、搬送用ロボット５を用いてＳｉウエハー１を搬送用フィルム７に設置する。Ｓｉウエハー１の設置終了後、送り出しローラ３および巻き取りローラ４を共に回転させることによって、搬送用フィルム７に設置されているＳｉウエハー１をチャンバー６内に移動させ、上記工程１～４を行うことによって、新たな接着基板を作製することができる。 Finally, as step 5 which is a step after step 4 above, the chamber 6 is opened by moving the chamber upper portion 6a and the chamber lower portion 6b. Then, as shown in FIG. 2E, the produced bonded substrate is taken out from the chamber 6a. When continuing the bonding process, a new glass substrate 2 is held in the chamber 6a. Further, outside the chamber 6, the Si wafer 1 is placed on the transfer film 7 using the transfer robot 5 in the same manner as in Step 1. After the installation of the Si wafer 1, the delivery roller 3 and the take-up roller 4 are rotated to move the Si wafer 1 installed on the transfer film 7 into the chamber 6, and the above steps 1 to 4 are performed. As a result, a new adhesive substrate can be manufactured.
　なお、搬送用フィルム７への新たなＳｉウエハー１の設置は、上記任意の工程の間に行ってもよい。予め、Ｓｉウエハー１を設置しておくことによって、チャンバー６の分離後、すぐにチャンバー６内まで移動させることができるため、効率的に接着基板を作製することが可能である。 In addition, you may perform installation of the new Si wafer 1 to the film 7 for conveyance between the said arbitrary processes. By installing the Si wafer 1 in advance, it can be moved into the chamber 6 immediately after the separation of the chamber 6, so that an adhesive substrate can be efficiently produced.
　（本実施形態の効果）
　本実施形態に係る接着装置２０は、従来よりも構成が単純な搬送用フィルム７等を使用しているため、接着装置を低コストで製造することが可能である。また、本実施形態にかかる接着装置２０は、気体の吸引等による減圧によって、Ｓｉウエハー１とガラス基板２との接着を可能にし、従来のようなリフトピンのように物理的に圧力を加える機構を有していないため、より低コストで接着装置を製造することができる。 (Effect of this embodiment)
Since the bonding apparatus 20 according to the present embodiment uses the transport film 7 having a simpler structure than the conventional one, the bonding apparatus can be manufactured at low cost. In addition, the bonding apparatus 20 according to the present embodiment has a mechanism that allows the Si wafer 1 and the glass substrate 2 to be bonded to each other by pressure reduction by gas suction or the like, and physically applies pressure like a conventional lift pin. Since it does not have, it can manufacture a bonding apparatus at lower cost.
　また、本実施形態にかかる接着装置２０において、搬送用フィルム７はチャンバー６から外延しているため、接着室９内においてＳｉウエハー１とガラス基板２との接着しているときに、次のＳｉウエハー１を搬送用フィルム７に設置することができる。つまり、チャンバー６の分離後すぐにＳｉウエハー１をチャンバー６内に移動させることができるため、効率的に接着基板を作製することができ、製造効率を向上させることが可能である。 In the bonding apparatus 20 according to this embodiment, since the transport film 7 extends from the chamber 6, when the Si wafer 1 and the glass substrate 2 are bonded in the bonding chamber 9, the next Si The wafer 1 can be placed on the transfer film 7. That is, since the Si wafer 1 can be moved into the chamber 6 immediately after the separation of the chamber 6, an adhesive substrate can be produced efficiently, and the production efficiency can be improved.
　また、圧力変動により搬送用フィルム７ごとＳｉウエハー１を持ち上げるので、従来のようなリフトピンを用いることなくリフトアップが可能であり、また安定的にリフトアップさせることができる。 Further, since the Si wafer 1 is lifted together with the transfer film 7 due to pressure fluctuation, it is possible to lift up without using a conventional lift pin, and it is possible to lift up stably.
　また、本発明に係る接着装置２０は、大型のガラス基板にそれよりも小さい複数のウエハーを接着する場合に、適している。 The bonding apparatus 20 according to the present invention is suitable for bonding a plurality of smaller wafers to a large glass substrate.
　（第１実施形態の変形例）
　また、従来技術に係る接着装置または搬送手段との互換性を取るために、図３のようなＳＵＳフレーム１２に伸縮性を有しているウエハー配置用フィルム１１を貼り付けた冶具を用いて、Ｓｉウエハー１とガラス基板２との接着を行ってもよい。図３の（ａ）は、搬送用フィルムの変形例を表す平面図であり、図３の（ｂ）は、本発明に係る搬送用フィルムの変形例を表す正面図である。 (Modification of the first embodiment)
Further, in order to take compatibility with the bonding apparatus or the conveying means according to the prior art, using a jig in which the wafer placement film 11 having elasticity is attached to the SUS frame 12 as shown in FIG. Bonding between the Si wafer 1 and the glass substrate 2 may be performed. FIG. 3A is a plan view illustrating a modified example of the transport film, and FIG. 3B is a front view illustrating a modified example of the transport film according to the present invention.
　本実施形態においては、Ｓｉウエハー１をウエハー配置用フィルム１１に設置し、ＳＵＳフレーム１２をチャンバー６内に移動させ、ＳＵＳフレーム１２およびウエハー配置用フィルム１１の端部をチャンバー上部６ａおよびチャンバー下部６ｂに挟み込む。形成されるチャンバー６およびウエハー配置用フィルム１１によって、第１実施形態と同様に接着室９および隣接室１０に分断される。チャンバー６内に保持されているガラス基板２とＳｉウエハー１との接着方法は、第１実施形態と同様のため、説明は省略する。 In this embodiment, the Si wafer 1 is placed on the wafer placement film 11, the SUS frame 12 is moved into the chamber 6, and the ends of the SUS frame 12 and the wafer placement film 11 are placed at the chamber upper portion 6 a and the chamber lower portion 6 b. Sandwiched between. The formed chamber 6 and wafer placement film 11 are divided into an adhesion chamber 9 and an adjacent chamber 10 as in the first embodiment. Since the method for bonding the glass substrate 2 held in the chamber 6 and the Si wafer 1 is the same as that in the first embodiment, the description thereof is omitted.
　〔第２実施形態〕
　図４の（ａ）～（ｃ）は、本発明の一実施形態（第２実施形態）に係る接着方法の各工程を説明するための図である。なお、説明の便宜上、前記第１実施形態にて説明した部材と同じ機能を有するものは、同じ符号を付記し、その説明を省略する。 [Second Embodiment]
FIGS. 4A to 4C are diagrams for explaining each step of the bonding method according to one embodiment (second embodiment) of the present invention. For convenience of explanation, the same reference numerals are given to those having the same functions as those described in the first embodiment, and the explanation thereof is omitted.
　本実施形態においては、圧力変化手段として、加圧口１３、バルブ１４、開放口１５およびガスボンベ１６を用いて隣接室１０の圧力を調整している接着装置２１が記載されている。なお、圧力変化手段は、隣接室１０の圧力を変化させるものである。つまり、隣接室１０に気体を流入させることによって、隣接室１０の圧力を増加させたり、または隣接室１０から気体を流出させることによって、隣接室１０の圧力を減少させたりする。 In the present embodiment, there is described a bonding device 21 that adjusts the pressure in the adjacent chamber 10 using a pressurizing port 13, a valve 14, an open port 15, and a gas cylinder 16 as pressure changing means. The pressure change means changes the pressure in the adjacent chamber 10. That is, the pressure in the adjacent chamber 10 is increased by flowing gas into the adjacent chamber 10, or the pressure in the adjacent chamber 10 is decreased by flowing out gas from the adjacent chamber 10.
　加圧口１３は、チャンバー下部６ｂに形成されており、ここから隣接室１０内に気体を注入することができる。 The pressurizing port 13 is formed in the chamber lower part 6b, from which gas can be injected into the adjacent chamber 10.
　バルブ１４は、配管の開閉を行い、隣接室１０への気体の注入および隣接室からの気体の流出を調整する。 The valve 14 opens and closes the piping to adjust the gas injection into the adjacent chamber 10 and the gas outflow from the adjacent chamber.
　開放口１５は、バルブ１４を開放し、隣接室１０の気体大気中に放出するためのものである。 The opening 15 is for opening the valve 14 and releasing it into the gas atmosphere of the adjacent chamber 10.
　ガスボンベ１６は、隣接室１０への気体供給源であり、バルブ１５および加圧口１３を通じて隣接室１０に気体が注入される。 The gas cylinder 16 is a gas supply source to the adjacent chamber 10, and gas is injected into the adjacent chamber 10 through the valve 15 and the pressure port 13.
　次に、図４の（ａ）～（ｃ）に基づいて、接着方法の各工程について説明する。なお、第１実施形態と同様の工程については説明を省略する。図４の（ａ）において、ガスボンベ１６からバルブ１４および加圧口１３を通じて、隣接室１０に気体を流入させた場合、搬送用フィルム７は、隣接室１０に流入した気体によって力を受ける。そして、搬送用フィルム７において、伸縮性を有している部分は伸長する。搬送用フィルム７が伸長することによって、搬送用フィルム７に配しているＳｉウエハー１は押し上げられ、チャンバー上部６ａに保持されているガラス基板２とＳｉウエハー１とが接触する。なお、隣接室１０からの加圧により、接着室９の気体は減圧口８より放出される。Ｓｉウエハー１とガラス基板２とが接触した後は、隣接室１０への気体の流入により搬送用フィルム７が伸長されるにつれて、Ｓｉウエハー１とガラス基板２とが接着し、両者の接着領域が大きくなる。 Next, each step of the bonding method will be described based on (a) to (c) of FIG. In addition, description is abbreviate | omitted about the process similar to 1st Embodiment. In FIG. 4A, when gas is caused to flow into the adjacent chamber 10 from the gas cylinder 16 through the valve 14 and the pressure port 13, the transport film 7 receives a force from the gas that has flowed into the adjacent chamber 10. And in the film 7 for conveyance, the part which has a stretching property expand | extends. When the transfer film 7 extends, the Si wafer 1 disposed on the transfer film 7 is pushed up, and the glass substrate 2 held on the chamber upper portion 6a and the Si wafer 1 come into contact with each other. Note that the gas in the bonding chamber 9 is released from the decompression port 8 by pressurization from the adjacent chamber 10. After the Si wafer 1 and the glass substrate 2 are in contact with each other, the Si wafer 1 and the glass substrate 2 are bonded together as the transfer film 7 is stretched by the inflow of gas into the adjacent chamber 10, and the bonding area between the two is determined. growing.
　図４の（ｂ）において、複数のＳｉウエハー１とガラス基板２との接着が完了した後は、減圧口８を通じて接着室９へ気体を流入させ、かつバルブ１４を開放して、加圧口１３および開放口１５を通じて隣接室１０から気体を流出させる。それによって、第１実施形態と同様に、Ｓｉウエハー１とガラス基板２を接着した状態において、搬送用フィルム７とＳｉウエハー１との接着が解除される。複数のＳｉウエハー１とガラス基板２との接着により作製された接着基板を接着室９から取り出し、チャンバー上部６ａに新しいガラス基板２を保持させる。 In FIG. 4B, after the bonding between the plurality of Si wafers 1 and the glass substrate 2 is completed, a gas is caused to flow into the bonding chamber 9 through the decompression port 8 and the valve 14 is opened to open the pressure port. Gas is allowed to flow out from the adjacent chamber 10 through the opening 13 and the opening 15. As a result, similarly to the first embodiment, in the state where the Si wafer 1 and the glass substrate 2 are bonded, the adhesion between the transport film 7 and the Si wafer 1 is released. The bonded substrate produced by bonding the plurality of Si wafers 1 and the glass substrate 2 is taken out from the bonding chamber 9, and the new glass substrate 2 is held in the chamber upper portion 6a.
　そして、図４の（ｃ）のように、送り出しロール３および巻き取りロール４を回転させて、搬送用フィルム７を移動させることよって、搬送用フィルム７に配している次のＳｉウエハー１をチャンバー６内に搬送できる。 Then, as shown in FIG. 4C, the next Si wafer 1 disposed on the transport film 7 is moved by rotating the feed roll 3 and the take-up roll 4 and moving the transport film 7. It can be transferred into the chamber 6.
　なお、本実施形態においては、ガスボンベ１６等を用いて隣接室１０の圧力を変化させることだけを圧力変化手段として記載したが、接着室９の圧力変化を組み合わせてもよい。第１実施形態において説明した接着室９の減圧を、隣接室１０の加圧を組み合わせることによって、より細かい制御をすることが可能になる。 In addition, in this embodiment, although only changing the pressure of the adjacent chamber 10 using the gas cylinder 16 etc. was described as a pressure change means, you may combine the pressure change of the adhesion | attachment chamber 9. FIG. Finer control can be performed by combining the decompression of the bonding chamber 9 described in the first embodiment with the pressurization of the adjacent chamber 10.
　なお、本実施形態では、気体を隣接室１０に流入させることにより、隣接室１０の容積を増加させる構成を採用したが、本発明はこれに限定されるものではなく、例えば、熱膨張する物体を隣接室１０内に予め配設しておき、搬送用フィルム７を接着室に向けて押し上げたい場合に当該物体を膨張させることによって、隣接室１０の容積を増加させて、搬送用フィルム７の押し上げを実現してもよい。当該物体には制御可能な熱源が搭載され、膨張時には当該熱源に電力が供給されることで当該物体に熱を与えることが可能である。同様に、第１実施形態の接着室の容積減少も、脱気によるものに限定されず、上述のような熱による膨張・収縮を利用したものを採用してもよい。 In the present embodiment, a configuration is adopted in which the volume of the adjacent chamber 10 is increased by allowing gas to flow into the adjacent chamber 10. However, the present invention is not limited to this, for example, an object that thermally expands. Is disposed in advance in the adjacent chamber 10, and when the transport film 7 is to be pushed up toward the bonding chamber, the object is expanded to increase the volume of the adjacent chamber 10. Push-up may be realized. A heat source that can be controlled is mounted on the object, and heat can be applied to the object by supplying electric power to the heat source during expansion. Similarly, the volume reduction of the bonding chamber of the first embodiment is not limited to that due to deaeration, but may be one that utilizes expansion / contraction due to heat as described above.
　このように物理的な部材を用いて加圧等を行わず、気体の流入および流出を用いて圧力変化を行っているため、装置をより簡素化することが可能になる。 Since the pressure change is performed using the inflow and outflow of the gas without using the physical member in this way, the apparatus can be further simplified.
　〔第３実施形態〕
　図５は、本発明の一実施形態（第３実施形態）に係る接着装置２２の構成を示す図である。 [Third Embodiment]
FIG. 5 is a diagram showing a configuration of the bonding apparatus 22 according to one embodiment (third embodiment) of the present invention.
　本発明に係る一実施形態においては、チャンバー６を接着室９および隣接室１０に分断している搬送用フィルム７を、チャンバー６内においてガラス基板２に対して傾斜をもたせている構成以外は第１実施形態と同様である。 In one embodiment according to the present invention, the transfer film 7 that divides the chamber 6 into the bonding chamber 9 and the adjacent chamber 10 is the first except for the configuration in which the glass substrate 2 is inclined in the chamber 6. This is the same as in the first embodiment.
　なお、説明の便宜上、前記第１実施形態にて説明した部材と同じ機能を有するものは、同じ符号を付記し、その説明を省略する。 For convenience of explanation, those having the same functions as the members explained in the first embodiment are given the same reference numerals and explanation thereof is omitted.
　図６の（ａ）～（ｄ）は、本実施形態に係る接着方法の各工程を説明するための図である。図６の（ａ）のように、搬送用フィルムを介して、チャンバー上部６ａおよびチャンバー下部６ｂの接触する高さを左右において相違させることによって、チャンバー６内において、ガラス基板２に対して搬送用フィルム７に傾斜をもたせることができる。すなわち、チャンバー上部６ａおよびチャンバー下部６ｂはそれぞれ、搬送用フィルム７の一方側と接触する第１側部と、他方側と接触する第２側部とを有しているが、本実施形態では、チャンバー上部６ａの第１側部と第２側部とが異なる高さで構成されており、チャンバー下部６ｂの第１側部と第２側部とが異なる高さで構成されており、チャンバー上部６ａの第１側部とチャンバー下部６ｂの第１側部との高さの合計と、チャンバー上部６ａの第２側部とチャンバー下部６ｂの第２側部との高さの合計とが等しくなるように構成されている。これにより、ガラス基板２に対して搬送用フィルム７に傾斜をもたせることができる。このとき、接着室９内において搬送用フィルム７に配されている複数のＳｉウエハー１は、ガラス基板２に対して傾斜を有している。 6A to 6D are views for explaining each step of the bonding method according to this embodiment. As shown in FIG. 6 (a), the height of the contact between the chamber upper part 6a and the chamber lower part 6b is different on the left and right sides through the conveyance film, thereby conveying the glass substrate 2 in the chamber 6. The film 7 can be inclined. That is, each of the chamber upper part 6a and the chamber lower part 6b has a first side part in contact with one side of the transport film 7 and a second side part in contact with the other side. In this embodiment, The first side portion and the second side portion of the chamber upper portion 6a are configured with different heights, and the first side portion and the second side portion of the chamber lower portion 6b are configured with different heights. The total height of the first side portion of 6a and the first side portion of the lower chamber portion 6b is equal to the total height of the second side portion of the upper chamber portion 6a and the second side portion of the lower chamber portion 6b. It is configured as follows. Thereby, the conveyance film 7 can be inclined with respect to the glass substrate 2. At this time, the plurality of Si wafers 1 disposed on the transfer film 7 in the bonding chamber 9 are inclined with respect to the glass substrate 2.
　このように、複数のＳｉウエハー１がガラス基板２に対して傾斜を有している状態において、接着室９内を減圧して搬送用フィルム７を伸長させると、第１実施形態と同様にＳｉウエハー１とガラス基板２とを接触させることができる。 In this way, when the plurality of Si wafers 1 are inclined with respect to the glass substrate 2, when the inside of the bonding chamber 9 is decompressed to elongate the transport film 7, Si as in the first embodiment. The wafer 1 and the glass substrate 2 can be brought into contact with each other.
　図７は、第１実施形態に係るＳｉウエハー１とガラス基板２との接着を表す図である。第１実施形態においては、図７のように、搬送用フィルム７のチャンバー６を分断している部分の中央部に配されているＳｉウエハー１から最初にガラス基板２に接触し、かつＳｉウエハー１はガラス基板２と平行に接触する。これは、接着室９の減圧をした場合に、チャンバー６内の搬送用フィルムの中央部が盛り上がるためである。 FIG. 7 is a diagram showing adhesion between the Si wafer 1 and the glass substrate 2 according to the first embodiment. In the first embodiment, as shown in FIG. 7, the Si wafer 1 is first brought into contact with the glass substrate 2 from the Si wafer 1 arranged at the center of the portion of the transport film 7 where the chamber 6 is divided, and the Si wafer 1 contacts the glass substrate 2 in parallel. This is because the central portion of the transport film in the chamber 6 rises when the pressure in the bonding chamber 9 is reduced.
　また、チャンバー６内の搬送用フィルム７の中心部が盛り上がっている場合には、当該中央部以外のチャンバー６内の搬送用フィルム７は、ガラス基板２に対して傾斜を有している。そのため、中央部に位置しているＳｉウエハー１以外のＳｉウエハー１は、ガラス基板２に対して傾斜を有したまま、Ｓｉウエハー１の端部からガラス基板２と接触する。 When the central portion of the transport film 7 in the chamber 6 is raised, the transport film 7 in the chamber 6 other than the central portion is inclined with respect to the glass substrate 2. Therefore, the Si wafer 1 other than the Si wafer 1 located in the central portion comes into contact with the glass substrate 2 from the end portion of the Si wafer 1 while being inclined with respect to the glass substrate 2.
　一方、本実施形態においては、図６の（ｂ）および図８のように、ガラス基板２にもっとも近く設置されている端のＳｉウエハー１（図６の（ｂ）および図８においては左端）からガラス基板２に接触する。同時に、Ｓｉウエハー１はガラス基板２に対して傾斜を有した状態において、Ｓｉウエハー１の端部からガラス基板２に接触する。 On the other hand, in this embodiment, as shown in FIG. 6B and FIG. 8, the Si wafer 1 at the end closest to the glass substrate 2 (the left end in FIG. 6B and FIG. 8). To the glass substrate 2. At the same time, the Si wafer 1 comes into contact with the glass substrate 2 from the end of the Si wafer 1 in a state where the Si wafer 1 is inclined with respect to the glass substrate 2.
　上記のように接触し、接着室９の減圧によりＳｉウエハー１とガラス基板２との接着を開始される。図６の（ｃ）のように、端のＳｉウエハー１とガラス基板２との接着が終了すると、当該端のＳｉウエハー１に隣接しているＳｉウエハー１が、ガラス基板２と接着を開始する。このとき、端のＳｉウエハー１と同様に、端部からガラス基板２と接触し、Ｓｉウエハー１とガラス基板２との接着は開始される。 Contact is made as described above, and the adhesion between the Si wafer 1 and the glass substrate 2 is started by the decompression of the bonding chamber 9. As shown in FIG. 6C, when the bonding between the end Si wafer 1 and the glass substrate 2 is completed, the Si wafer 1 adjacent to the end Si wafer 1 starts bonding to the glass substrate 2. . At this time, similarly to the Si wafer 1 at the end, the glass substrate 2 comes into contact with the end portion, and adhesion between the Si wafer 1 and the glass substrate 2 is started.
　また、上記接着が終了すると、図６の（ｄ）にように、右端のＳｉウエハー１が傾斜を有した状態において、ガラス基板２に接触し、Ｓｉウエハー１とガラス基板２との接着は開始される。全てのＳｉウエハー１とガラス基板２との接着が終了したことによって、全体の接着工程は終了する。つまり、全てのＳｉウエハー１とガラス基板２との接着は、Ｓｉウエハー１の端部から開始される。 When the above bonding is completed, as shown in FIG. 6D, in the state where the rightmost Si wafer 1 is inclined, the glass substrate 2 comes into contact, and the bonding between the Si wafer 1 and the glass substrate 2 starts. Is done. When the bonding between all the Si wafers 1 and the glass substrate 2 is completed, the entire bonding process is completed. That is, the bonding between all the Si wafers 1 and the glass substrate 2 is started from the end of the Si wafer 1.
　次に、Ｓｉウエハー１がガラス基板２に対して傾斜を有していることによる利点について、傾斜をもたせていない場合と比較して説明する。図９の（ａ）は、Ｓｉウエハー１がガラス基板２に端から接触して接着領域が拡大していくことを表す図であり、図９の（ｂ）は、Ｓｉウエハー１がガラス基板２に平行に接触して接着領域が拡大していくことを表す図である。 Next, advantages of the Si wafer 1 having an inclination with respect to the glass substrate 2 will be described in comparison with a case where the Si wafer 1 is not inclined. FIG. 9A is a diagram showing that the Si wafer 1 comes into contact with the glass substrate 2 from the end and the adhesion region is enlarged, and FIG. 9B is a diagram showing that the Si wafer 1 is glass substrate 2. It is a figure showing that an adhesion | attachment area | region expands by contacting in parallel.
　まず、Ｓｉウエハー１がガラス基板２に平行に接触した場合には、図９の（ｂ）のように、Ｓｉウエハー１の複数の箇所において、Ｓｉウエハー１とガラス基板２との接着が開始される。また、Ｓｉウエハー１とガラス基板２との接着が進行すると、複数の箇所に生じた接着面積が拡大する。そして、拡大した接着領域同士がぶつかることによって、図のような空気だまり１７が発生するおそれがある。つまり、Ｓｉウエハー１がガラス基板２に平行に接触した場合には、Ｓｉウエハー１の複数の箇所において、ガラス基板２との接着が開始されるため、空気だまり１７のような欠陥が発生するおそれがあり、高い歩留まり（全製品の数量に対する所定の品質を示す良品の比率）を確保する観点からは好ましくない。 First, when the Si wafer 1 comes into contact with the glass substrate 2 in parallel, adhesion between the Si wafer 1 and the glass substrate 2 is started at a plurality of locations on the Si wafer 1 as shown in FIG. The Further, when the bonding between the Si wafer 1 and the glass substrate 2 proceeds, the bonding area generated at a plurality of locations is expanded. Then, when the expanded adhesion areas collide with each other, there is a possibility that the air pool 17 as shown in the figure is generated. That is, when the Si wafer 1 contacts the glass substrate 2 in parallel, adhesion to the glass substrate 2 is started at a plurality of locations on the Si wafer 1, so that a defect such as an air pocket 17 may occur. This is not preferable from the viewpoint of securing a high yield (ratio of non-defective products showing a predetermined quality with respect to the quantity of all products).
　上述の問題を解決するためには、Ｓｉウエハー１の一箇所において、ガラス基板２との接着が開始され、空気だまりが発生しない構成にすることが好ましい。つまり、本実施形態のように、全てのＳｉウエハー１とガラス基板２との接着は、Ｓｉウエハー１の端部から開始される構成にすることによって、上記の空気だまりによる接着不良の問題を解消することが好ましい。次に、その詳細について説明する。 In order to solve the above-mentioned problem, it is preferable to adopt a configuration in which adhesion to the glass substrate 2 is started at one place of the Si wafer 1 and air accumulation is not generated. In other words, as in this embodiment, the bonding between all the Si wafers 1 and the glass substrate 2 is started from the end of the Si wafer 1, thereby eliminating the above-mentioned problem of poor bonding due to air accumulation. It is preferable to do. Next, the details will be described.
　Ｓｉウエハー１がガラス基板２に端から接触した場合には、図９の（ａ）にように、Ｓｉウエハー１とガラス基板２との接着は端部から中心に向かって進行していく。端部からもう一方の端部まで、Ｓｉウエハー１とガラス基板２との接着が進行すれば、接着は終了する。この場合において、ガラス基板２と接触したＳｉウエハー１の端部からのみ接着が拡大していくため、他の接着とぶつかることによって空気だまりが発生することはない。そのため、良好な接着を確保することおよび高い歩留まりを確保することができる。 When the Si wafer 1 comes into contact with the glass substrate 2 from the end, as shown in FIG. 9A, the adhesion between the Si wafer 1 and the glass substrate 2 proceeds from the end toward the center. If the bonding between the Si wafer 1 and the glass substrate 2 proceeds from one end to the other end, the bonding ends. In this case, since the adhesion expands only from the end portion of the Si wafer 1 that is in contact with the glass substrate 2, there is no occurrence of air accumulation by colliding with another adhesion. Therefore, it is possible to ensure good adhesion and high yield.
　なお、Ｓｉウエハー１がガラス基板２に平行に接触するのはチャンバー６内の搬送用フィルム７の中央部に配しているＳｉウエハー１である。ちなみに、第１実施形態において、中央部以外でのＳｉウエハー１とガラス基板２との接着によって、Ｓｉウエハー１の端部から開始されるため、空気だまりが発生していない良質の接着は可能である。しかし、チャンバー６内の搬送用フィルム７の中央部に配しているＳｉウエハー１とガラス基板２との接着を比較すると、空気だまりが形成されない構成である第３実施形態のときのほうが第１実施形態のときよりも、接着不良を生じていない接着基板をより効率的に作製することができる。 Note that the Si wafer 1 that contacts the glass substrate 2 in parallel is the Si wafer 1 disposed in the central portion of the transfer film 7 in the chamber 6. By the way, in the first embodiment, since the Si wafer 1 and the glass substrate 2 are bonded to each other in the area other than the central portion and started from the end of the Si wafer 1, it is possible to perform high-quality bonding with no air accumulation. is there. However, when the adhesion between the Si wafer 1 and the glass substrate 2 disposed in the central portion of the transport film 7 in the chamber 6 is compared, the first embodiment is a configuration in which no air pocket is formed. Compared to the embodiment, an adhesive substrate that does not cause poor adhesion can be more efficiently produced.
　なお、本実施形態に係る接着室９の減圧手段として、第１実施形態と同様のものを用いてもよい。また、第２実施形態に記載された隣接室１０の加圧を、本実施形態の構成に加えてもよい。 In addition, you may use the thing similar to 1st Embodiment as a pressure reduction means of the adhesion | attachment chamber 9 which concerns on this embodiment. Moreover, you may add the pressurization of the adjacent chamber 10 described in 2nd Embodiment to the structure of this embodiment.
　図５、６および８においては、チャンバー９内の搬送用フィルム７の左側の方が右側よりも相対的な高さが高くなるように、搬送用フィルム７に傾斜を形成させているが、右側の方が左側よりも相対的な高さが高くなるように、搬送用フィルム７に傾斜を形成させてもよい。 5, 6 and 8, the transport film 7 is inclined so that the left side of the transport film 7 in the chamber 9 has a higher relative height than the right side. An inclination may be formed in the transport film 7 so that the relative height is higher than that on the left side.
　なお、本実施形態では、四角形を有するＳｉウエハー１の一辺（例えば図５の左右に延びている辺）を傾斜させた場合について説明したが、本発明はこれに限定されるものではなく、この辺に直交する他の一辺、もしくは、その両方に傾きをもたせるように構成してもよい。 In the present embodiment, the case where one side of the Si wafer 1 having a quadrangle (for example, the side extending in the left and right direction in FIG. 5) is inclined has been described. However, the present invention is not limited to this, and this side You may comprise so that inclination may be given to the other side orthogonal to this, or both.
　（第３実施形態の変形例）
　また、図１０は、本実施形態に係る接着装置２２の変形例である。本実施形態において、搬送用フィルム７に配しているＳｉウエハー１に対してガラス基板２が傾斜した状態になるように、チャンバー６にガラス基板２を保持させている。この場合にも、接着室９を減圧し、チャンバー６内の搬送用フィルム７を伸長させることによって、傾斜を有した状態において、Ｓｉウエハー１の端部からＳｉウエハー１とガラス基板２との接着を開始させることができるため、第３実施形態と同様の効果を奏する。 (Modification of the third embodiment)
FIG. 10 is a modification of the bonding apparatus 22 according to this embodiment. In this embodiment, the glass substrate 2 is held in the chamber 6 so that the glass substrate 2 is inclined with respect to the Si wafer 1 disposed on the transfer film 7. Also in this case, the adhesion chamber 9 is depressurized, and the transfer film 7 in the chamber 6 is stretched to bond the Si wafer 1 and the glass substrate 2 from the end of the Si wafer 1 in an inclined state. Therefore, the same effect as in the third embodiment can be obtained.
　〔第４実施形態〕
　図１１は、（ａ）～（ｄ）は、第４実施形態に係る接着方法の各工程を説明するための図である。なお、説明の便宜上、前記第１実施形態にて説明した部材と同じ機能を有するものは、同じ符号を付記し、その説明を省略する。 [Fourth Embodiment]
11A to 11D are views for explaining each step of the bonding method according to the fourth embodiment. For convenience of explanation, the same reference numerals are given to those having the same functions as those described in the first embodiment, and the explanation thereof is omitted.
　チャンバー上部６ａおよびチャンバー下部６ｂの代わりに基板ステージ３０（保持手段）、剥離用ガイド３１（剥離手段）、突き上げピン３２（シート伸縮手段）およびステージ３３を備えている接着装置２３の構成が示されている。 Instead of the chamber upper part 6a and the chamber lower part 6b, the configuration of the bonding apparatus 23 provided with a substrate stage 30 (holding means), a peeling guide 31 (peeling means), a push-up pin 32 (sheet expansion / contraction means) and a stage 33 is shown. ing.
　基板ステージ３０にはガラス基板２が保持されており、基板ステージ３０の左右において剥離用ガイド３１が設置されている。剥離用ガイド３１は、Ｓｉウエハー１とガラス基板２との接着が完了した後に、搬送用フィルム７とＳｉウエハー１との接触を解除するためのものである。 The glass substrate 2 is held on the substrate stage 30, and peeling guides 31 are installed on the left and right sides of the substrate stage 30. The peeling guide 31 is for releasing the contact between the transport film 7 and the Si wafer 1 after the adhesion between the Si wafer 1 and the glass substrate 2 is completed.
　搬送用フィルム７を介して、ガラス基板２を保持している基板ステージ３０と突き上げピン３２とは正対している。突き上げピン３２は、ステージ３３上に形成されており、搬送用フィルム７および当該フィルムに配されたＳｉウエハー１を押し上げることができる。また、搬送用フィルム７は少なくとも一部において伸縮性を有しているため、突き上げピン３２により突き上げることによって、伸長する。 The substrate stage 30 holding the glass substrate 2 and the push-up pin 32 face each other through the transfer film 7. The push-up pins 32 are formed on the stage 33 and can push up the transfer film 7 and the Si wafer 1 disposed on the film. Further, since the transport film 7 has stretchability at least in part, it is extended by being pushed up by the push-up pin 32.
　なお、Ｓｉウエハー１および突き上げピン３２の相対位置を調整するために、ステージ３３は可動手段を備えていてもよい。 In order to adjust the relative positions of the Si wafer 1 and the push-up pins 32, the stage 33 may be provided with movable means.
　図１１の（ａ）において、送り出しロール３および巻き取りロール４を回転させ、搬送用フィルム７を移動させ、Ｓｉウエハー１とガラス基板２とを正対させ、かつ、突き上げピン３２が、搬送用フィルム７を介してＳｉウエハーと正対するように調整する。 In FIG. 11A, the delivery roll 3 and the take-up roll 4 are rotated, the transport film 7 is moved, the Si wafer 1 and the glass substrate 2 are directly opposed, and the push-up pin 32 is used for transport. The film 7 is adjusted so as to face the Si wafer through the film 7.
　図１１の（ｂ）において、突き上げピン３２を上昇させることによって、搬送用フィルム７を挟んで当該突き上げピン３２を正対している各Ｓｉウエハー１に、接触させることができる。このとき、突き上げピン３２を上昇させることによって、伸縮性、柔軟性を有している搬送用フィルム７は上方に突き上げられ、それに応じて、搬送用フィルム７上に配置したＳｉウエハー１も同様に突き上げられる。ある程度Ｓｉウエハー１が突き上げられたとき、Ｓｉウエハー１とガラス基板２とは接触する。Ｓｉウエハー１がガラス基板２に接触した後も、Ｓｉウエハー１および搬送用フィルム７を引き上げることによってＳｉウエハー１とガラス基板２との接着領域は拡大する。なお、第１実施形態に記載したように、ウエハ直接接合技術を用いることによって、Ｓｉウエハー１等に大きな力を加えることなく、Ｓｉウエハー１とガラス基板２とは接着させることができる。 In FIG. 11B, by raising the push-up pin 32, it is possible to contact each Si wafer 1 facing the push-up pin 32 with the transport film 7 interposed therebetween. At this time, by raising the push-up pin 32, the transport film 7 having elasticity and flexibility is pushed upward, and accordingly, the Si wafer 1 disposed on the transport film 7 is similarly used. It is pushed up. When the Si wafer 1 is pushed up to some extent, the Si wafer 1 and the glass substrate 2 come into contact with each other. Even after the Si wafer 1 comes into contact with the glass substrate 2, the bonding area between the Si wafer 1 and the glass substrate 2 is expanded by pulling up the Si wafer 1 and the transfer film 7. As described in the first embodiment, by using the wafer direct bonding technique, the Si wafer 1 and the glass substrate 2 can be bonded without applying a large force to the Si wafer 1 or the like.
　図１１の（ｃ）において、全てのＳｉウエハー１とガラス基板２との接着が終了した後、突き上げピン３２を下げ、搬送用フィルム７と突き上げピン３２との接触を解除する。さらに、剥離ガイド３１を搬送用フィルム７と接触させ、下方に圧力を加えることによって、Ｓｉウエハー１と搬送用フィルム７との接触を解除することができる。Ｓｉウエハー１と搬送用フィルム７との接触が解除されると、搬送用フィルム７は自身の伸縮性によって元の状態に戻る。よって、Ｓｉウエハー１とガラス基板２とが接着した接着基板を得ることができる。 11 (c), after all the Si wafers 1 and the glass substrate 2 have been bonded, the push-up pins 32 are lowered, and the contact between the transport film 7 and the push-up pins 32 is released. Furthermore, the contact between the Si wafer 1 and the transport film 7 can be released by bringing the peeling guide 31 into contact with the transport film 7 and applying pressure downward. When the contact between the Si wafer 1 and the transport film 7 is released, the transport film 7 returns to its original state due to its own elasticity. Therefore, an adhesive substrate in which the Si wafer 1 and the glass substrate 2 are bonded can be obtained.
　図１１の（ｄ）において、Ｓｉウエハー１と搬送用フィルム７との接触を解除した後は、剥離用ガイド３１を上方に引き上げ、搬送用フィルム７に対する加圧を解除する。そして、作製された接着基板を基板ステージ３０から取り出し、接着処理を継続する場合には、新たなガラス基板２を基板ステージ３０に保持させる。また、第１実施形態の工程１と同様に、搬送用ロボット５を用いてＳｉウエハー１を搬送用フィルム７に配置し、送り出しローラ３および巻き取りローラ４を共に回転させることによって、Ｓｉウエハー１をガラス基板２と正対するまで移動させる。そうすることによって、新たな接着基板を作製することができる。 11D, after the contact between the Si wafer 1 and the transport film 7 is released, the peeling guide 31 is pulled upward to release the pressure on the transport film 7. Then, when the produced bonded substrate is taken out from the substrate stage 30 and the bonding process is continued, a new glass substrate 2 is held on the substrate stage 30. Similarly to the step 1 of the first embodiment, the Si wafer 1 is placed on the transport film 7 by using the transport robot 5, and the feed roller 3 and the take-up roller 4 are rotated together to thereby rotate the Si wafer 1. Is moved until it faces the glass substrate 2. By doing so, a new adhesive substrate can be produced.
　なお、図１１の（ａ）～（ｄ）においては、ガラス基板２に接着させるＳｉウエハー１の数と同数の突き上げピン３２が記載されているが、突き上げピン３２の数は限定されない。また、突き上げピン３２は、圧力変化手段の代わりに図１等のチャンバー下部６ｂに設置されていてもよい。 11A to 11D, the same number of push-up pins 32 as the number of Si wafers 1 to be bonded to the glass substrate 2 are shown, but the number of push-up pins 32 is not limited. Moreover, the push-up pin 32 may be installed in the chamber lower part 6b of FIG. 1 etc. instead of the pressure changing means.
　また、剥離用ガイド３１は、基板ステージ３０を挟んで左右に配置されているが、左右の両方に配置されている必要はなく、どちらか一方に配置されていてもよい。 Further, the peeling guides 31 are arranged on the left and right sides of the substrate stage 30, but it is not necessary to arrange them on both the left and right sides, and may be arranged on either one.
　さらに、搬送用フィルム７に配しているＳｉウエハー１をガラス基板２に対して傾斜をもたせる構成にしてもよく、また、搬送用フィルム７に配しているＳｉウエハー１に対してガラス基板２が傾斜した状態になるように、基板ステージ３０にガラス基板２を保持させてもよい。これによって、第３実施形態と同様に接着領域に気泡が混入することを防止することができる。 Further, the Si wafer 1 disposed on the transport film 7 may be configured to be inclined with respect to the glass substrate 2, and the glass substrate 2 may be disposed on the Si wafer 1 disposed on the transport film 7. The glass substrate 2 may be held on the substrate stage 30 so that the angle is inclined. As a result, it is possible to prevent air bubbles from being mixed into the adhesion region as in the third embodiment.
　本発明は上述した各実施形態に限定されるものではなく、請求項に示した範囲で種々の変更が可能であり、異なる実施形態にそれぞれ開示された技術的手段を適宜組み合わせて得られる実施形態についても本発明の技術的範囲に含まれる。 The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention.
　＜まとめ＞
　本発明に係る接着装置は、少なくとも一部分に伸縮性を有しており、第一の基板を配することができるシートと、上記第一の基板の接着対象である第二の基板を配することができる保持手段と、上記シートを伸長させて、当該シートを配した上記第一の基板を上記第二の基板に近づけて、第一の基板を第二の基板に接着させるシート伸縮手段と、を備えていることを特徴としている。 <Summary>
The bonding apparatus according to the present invention has a sheet that can be stretched at least in part and on which a first substrate can be disposed, and a second substrate that is an adhesion target of the first substrate. Holding means capable of extending the sheet, the sheet expansion means for extending the sheet, bringing the first substrate on which the sheet is disposed closer to the second substrate, and bonding the first substrate to the second substrate; It is characterized by having.
　上記構成によれば、シートは少なくとも一部分に伸縮性を有しているため、上記シート伸縮手段によって、上記シートが保持手段に向かって伸長する。 According to the above configuration, since the sheet has elasticity at least in part, the sheet expands toward the holding means by the sheet expansion / contraction means.
　このようにシートを保持手段側に伸長させることにより、保持手段に配した第二の基板にシートを近づけることができる。 In this way, by extending the sheet toward the holding means, the sheet can be brought close to the second substrate disposed on the holding means.
　この原理を利用し、当該シートに第一の基板を配しておくことにより、シートの伸長に伴って、保持手段に配した第二の基板に当該第一の基板を近づけることができる。上記のように、両基板を近づけることによって、第一の基板と第二の基板とを接触させることができる。 By using this principle and arranging the first substrate on the sheet, the first substrate can be brought closer to the second substrate arranged on the holding means as the sheet extends. As described above, the first substrate and the second substrate can be brought into contact with each other by bringing the two substrates close to each other.
　これにより、シート伸縮手段により第一の基板を第二の基板に近づける際に、シートごと第一の基板が移動するので、シート伸縮手段が直接第一の基板に接触することがない。このため、シート伸縮手段としてリフトピンを用いたとしても第一の基板への傷付きを懸念する必要がない。また、シートごと第一の基板が移動するので、当該移動を安定的に実施することができる。 Thus, when the first substrate is moved closer to the second substrate by the sheet expansion / contraction means, the first substrate moves together with the sheet, so that the sheet expansion / contraction means does not directly contact the first substrate. For this reason, even if lift pins are used as the sheet expansion / contraction means, there is no need to worry about damage to the first substrate. Further, since the first substrate moves together with the sheet, the movement can be stably performed.
　本発明に係る接着装置の一形態は、上記の構成に加えて、上記シートは、帯状に構成されていて、且つ、上記保持手段に正対する正対領域と、当該領域に隣接した、当該保持手段に正対していない非正対領域とを有しており、上記接着装置は、上記非正対領域に上記第一の基板を配する基板配送部と、上記シートを移動させて、上記基板配送部によって配された上記第一の基板を上記第二の基板に正対するように搬送する移動手段と、を更に備えており、上記移動手段は、回転することにより上記帯状のシートを移動させる回転部である、ことが好ましい。 In one embodiment of the bonding apparatus according to the present invention, in addition to the above-described configuration, the sheet is configured in a band shape, and a holding region that is opposed to the holding unit and that is adjacent to the holding region. A non-facing area not facing the means, and the bonding apparatus moves the sheet by moving the sheet to a substrate delivery section that places the first substrate in the non-facing area. Moving means for conveying the first substrate arranged by the delivery section so as to face the second substrate, and the moving means moves the belt-like sheet by rotating. It is preferably a rotating part.
　上記構成によれば、保持手段に正対していない、シートの非正対領域に、基板配送部を用いて第一の基板を配し、配した第一の基板を移動手段によって第二の基板に正対するように搬送することができる。 According to the above configuration, the first substrate is arranged using the substrate delivery unit in the non-facing region of the sheet that is not directly opposed to the holding unit, and the arranged first substrate is moved to the second substrate by the moving unit. It can be conveyed so as to face to.
　そのため、シートへの第一の基板の配置と、接着基板の作製とを並行しておこなうことが可能となる。これにより、効率的に接着基板の作製をすることができるという効果を奏する。 Therefore, it is possible to perform the placement of the first substrate on the sheet and the production of the adhesive substrate in parallel. Thereby, there exists an effect that an adhesive substrate can be produced efficiently.
　また、帯状のシートを回転させることによって、シートに配した第一の基板を移動させることが可能であるため、複雑な機構を設けることなく、第一の基板を第二の基板に正対するように搬送することができる。 In addition, the first substrate placed on the sheet can be moved by rotating the belt-shaped sheet, so that the first substrate faces the second substrate without providing a complicated mechanism. Can be conveyed.
　さらに、帯状のシートを用いているため、例えば基板を載置するためのステージを基板の載置場所と基板の接着場所との間で往復させるような動きを必要とせず、順送りによって第一の基板を継続的に第一の基板を第二の基板に正対するように搬送することができる。つまり、接着終了後すぐに、次に接着される第一の基板を第一の基板を第二の基板に正対するように搬送できるため、接着基板の作製時間を短縮でき、作製効率を向上させることができる。 In addition, since a belt-like sheet is used, for example, the stage for placing the substrate does not need to be moved back and forth between the place where the substrate is placed and the place where the substrate is bonded, and the first step is performed by progressive feeding. The substrate can be continuously transferred so that the first substrate faces the second substrate. That is, immediately after the bonding is completed, the first substrate to be bonded next can be transported so that the first substrate faces the second substrate, so that the manufacturing time of the bonded substrate can be shortened and the manufacturing efficiency can be improved. be able to.
　本発明に係る接着装置の一形態は、上記の構成に加えて、上記保持手段は、内部に上記シートを配して、当該シートによって当該内部が接着室、および、当該接着室に隣接する隣接室に分断されるチャンバーを形成し、上記チャンバーは或る上記接着室において、上記シートに配した上記第一の基板と、上記チャンバーに配した上記第二の基板とを接着する構成となっており、上記シート伸縮手段は、上記接着室の減圧、および、上記隣接室の加圧の少なくともいずれかを行うことにより上記シートを伸長させて、上記或る接着室において、当該シートに配した上記第一の基板を上記第二の基板に近づけて、上記第一の基板を上記第二の基板に接着させる圧力変化手段であることが好ましい。 In one embodiment of the bonding apparatus according to the present invention, in addition to the above-described configuration, the holding means arranges the sheet therein, and the sheet is adjacent to the bonding chamber and the bonding chamber by the sheet. A chamber divided into a chamber is formed, and the chamber is configured to adhere the first substrate disposed on the sheet and the second substrate disposed in the chamber in a certain bonding chamber. The sheet expansion / contraction means extends the sheet by performing at least one of depressurization of the bonding chamber and pressurization of the adjacent chamber, and is arranged on the sheet in the certain bonding chamber. The pressure change means is preferably a pressure changing means for bringing the first substrate close to the second substrate and bonding the first substrate to the second substrate.
　上記構成によれば、チャンバー内部にシートを配することによって、チャンバー内部を接着室と、当該接着室に隣接する隣接室とに分断することができる。シートは、接着室にと隣接室との境界において通常の場合は伸縮していない状態で存在している。ただ、シートは少なくとも一部分に伸縮性を有している。そのため、上記圧力変化手段によって上記接着室の減圧、および、上記隣接室の加圧の少なくともいずれかが行われると、通常の状態にあったシートには、当該シートを境界にして隣り合っている２つの室の内圧の差によって、一方の室側に向けて引っ張られるあるいは押し出される力が働いて、一方の室側に向かって伸長するように変形する。 According to the above configuration, by disposing the sheet inside the chamber, the inside of the chamber can be divided into an adhesion chamber and an adjacent chamber adjacent to the adhesion chamber. The sheet normally exists in the bonding chamber and the boundary between the adjacent chambers and is not stretched. However, the sheet has elasticity at least partially. Therefore, when at least one of depressurization of the bonding chamber and pressurization of the adjacent chamber is performed by the pressure changing means, the sheet in a normal state is adjacent to the sheet as a boundary. Due to the difference between the internal pressures of the two chambers, a force that is pulled or pushed out toward one of the chambers acts to deform so as to extend toward one of the chambers.
　このようにシートを一方の室側に伸長させることにより、一方の室に配した第二の基板にシートを近づけることができる。 In this way, by extending the sheet to the one chamber side, the sheet can be brought close to the second substrate disposed in the one chamber.
　この原理を利用し、当該シートに第一の基板を配しておくことにより、シートの伸長に伴って、チャンバーに配した第二の基板に当該第一の基板を近づけることができる。上記のように、両基板を近づけることによって、第一の基板と第二の基板とを接触させることができる。 By using this principle and arranging the first substrate on the sheet, the first substrate can be brought closer to the second substrate arranged in the chamber as the sheet is extended. As described above, the first substrate and the second substrate can be brought into contact with each other by bringing the two substrates close to each other.
　本発明に係る接着装置の一形態は、上記の構成に加えて、上記第一の基板と上記第二の基板とを接着させた後、上記シートに対して力を加え、伸長している上記シートを縮めて、当該シートと上記第一の基板とを離す剥離手段を備えていることが好ましい。 In one embodiment of the bonding apparatus according to the present invention, in addition to the above-described configuration, the first substrate and the second substrate are bonded, and then a force is applied to the sheet to extend the sheet. It is preferable to provide a peeling means for shrinking the sheet and separating the sheet from the first substrate.
　上記構成によれば、第一の基板と第二の基板とを接着させた後、第一の基板を第二の基板側に残して、シートだけを剥離手段を用いて元の状態に戻して、シートから第一の基板を外すことができる。 According to the above configuration, after the first substrate and the second substrate are bonded, the first substrate is left on the second substrate side, and only the sheet is returned to the original state using the peeling means. The first substrate can be removed from the sheet.
　本発明に係る接着装置の一形態は、上記の構成に加えて、上記圧力変化手段は、上記第一の基板と上記第二の基板とを接着させた後、上記接着室の加圧、および、上記隣接室の減圧の少なくともいずれかを行うことによって、上記伸長しているシートを縮めて当該シートと上記第一の基板とを離すように構成されている、ことが好ましい。 In one embodiment of the bonding apparatus according to the present invention, in addition to the above-described configuration, the pressure changing unit may bond the first substrate and the second substrate, then pressurize the bonding chamber, and It is preferable that the extension sheet is contracted to separate the sheet and the first substrate by performing at least one of decompression of the adjacent chambers.
　上記構成によれば、第一の基板と第二の基板とを接着させた後、第一の基板を第二の基板側に残して、シートだけを圧力変化手段を用いて元の状態に戻して、シートから第一の基板を外すことができる。 According to the above configuration, after the first substrate and the second substrate are adhered, the first substrate is left on the second substrate side, and only the sheet is returned to the original state using the pressure changing means. The first substrate can be removed from the sheet.
　本発明に係る接着装置の一形態は、上記の構成に加えて、上記圧力変化手段は、上記隣接室の加圧を行うことによって上記シートを伸長させる構成であり、上記圧力変化手段は、上記隣接室の外部から当該隣接室に気体を流入させることによって、上記加圧を行うことが好ましい。 In one embodiment of the bonding apparatus according to the present invention, in addition to the above-described configuration, the pressure change unit is configured to extend the sheet by pressurizing the adjacent chamber, and the pressure change unit includes the above-described configuration. The pressurization is preferably performed by flowing a gas into the adjacent chamber from the outside of the adjacent chamber.
　上記構成によれば、圧力変化手段として物理的な力を加える機構を用いていないため、第一の基板を押し出すために用いる機械的な昇降手段等を要しない。そのため、接着装置が複雑でなく、かつ接着装置のコストを下げることができるという効果を奏する。 According to the above configuration, since a mechanism for applying a physical force is not used as the pressure changing means, there is no need for a mechanical lifting means or the like used to push out the first substrate. For this reason, the bonding apparatus is not complicated, and the cost of the bonding apparatus can be reduced.
　本発明に係る接着装置の一形態は、上記の構成に加えて、上記シートは、上記第一の基板と上記第二の基板とが接触し始める際に第一の基板が第二の基板に対して傾斜した状態となるように構成されている、ことが好ましい。 In one embodiment of the bonding apparatus according to the present invention, in addition to the above-described configuration, when the first substrate and the second substrate start to contact with each other, the first substrate becomes the second substrate. It is preferable that it is comprised so that it may become the state inclined with respect to.
　上記構成によれば、第一の基板が第二の基板に対して傾斜した状態となるため、第一の基板の端部から第二の基板に接触し始めることができる。このように接触させた場合には、接着は第一の基板の端部から接着領域が拡大する方向に進行する。接着領域の拡大は、第一の基板の端部からのみ生じているため、１つの第一の基板において複数の接着領域が同時に生じると最終段階でこれらの領域が１つの合わさる際に領域と領域との境界部分に生じてしまう空気だまりなどのような欠陥が形成されにくく、接着不良は生じにくいという効果を奏する。 According to the above configuration, since the first substrate is inclined with respect to the second substrate, it is possible to start contact with the second substrate from the end portion of the first substrate. When contact is made in this way, the adhesion proceeds in the direction in which the adhesion area expands from the end of the first substrate. Since the enlargement of the adhesion region occurs only from the end of the first substrate, when a plurality of adhesion regions occur simultaneously on one first substrate, the region and the region when these regions are combined into one at the final stage. It is difficult to form defects such as air traps that occur at the boundary between the two and the defective adhesion.
　また、上記構成によれば、接着不良が生じている接着基板の割合を少なくできるため、歩留まりを向上させることができる。 Further, according to the above configuration, since the proportion of the adhesive substrate in which adhesion failure occurs can be reduced, the yield can be improved.
　本発明に係る接着装置の一形態は、上記の構成に加えて、上記保持手段は、上記第二の基板と上記第一の基板とが接触し始める際に第二の基板が第一の基板に対して傾斜した状態となるように、第二の基板を保持していることが好ましい。 In one form of the bonding apparatus according to the present invention, in addition to the above configuration, the holding means is configured such that the second substrate is the first substrate when the second substrate and the first substrate start to contact each other. It is preferable to hold the second substrate so as to be inclined with respect to.
　上記構成によれば、第二の基板が第一の基板に対して傾斜した状態となるため、第一の基板の端部から第二の基板に接触し始めることができる。このように接触させた場合には、接着は第一の基板の端部から接着領域が拡大する方向に進行する。接着領域の拡大は、第一の基板の端部からのみ生じているため、１つの第一の基板において複数の接着領域が同時に生じると最終段階でこれらの領域が１つの合わさる際に領域と領域との境界部分に生じてしまう空気だまりなどのような欠陥が形成されにくく、接着不良が生じにくいという効果を奏する。 According to the above configuration, since the second substrate is inclined with respect to the first substrate, the second substrate can be brought into contact with the end portion of the first substrate. When contact is made in this way, the adhesion proceeds in the direction in which the adhesion area expands from the end of the first substrate. Since the enlargement of the adhesion region occurs only from the end of the first substrate, when a plurality of adhesion regions occur simultaneously on one first substrate, the region and the region when these regions are combined into one at the final stage. It is difficult to form defects such as air traps that occur at the boundary between the two and the effect of poor adhesion.
　また、上記構成によれば、接着不良が生じている接着基板の割合を少なくできるため、歩留まりを向上させることができるという効果を奏する。 Further, according to the above configuration, since the ratio of the adhesive substrate in which adhesion failure occurs can be reduced, there is an effect that the yield can be improved.
　本発明に係る接着装置の一形態は、上記第一の基板として半導体基板を用いて、上記第二の基板として絶縁体基板を用いることができる。 In one embodiment of the bonding apparatus according to the present invention, a semiconductor substrate can be used as the first substrate, and an insulator substrate can be used as the second substrate.
　上記構成によれば、接着装置は複雑な機構を有していないため、接着装置のコストを下げることが可能である。そのため、安価なＳＯＩ（ｓｌｉｃｏｎ　ｏｎ　ｉｎｓｕｌａｔｏｒ）基板を作製することができるという効果を奏する。 According to the above configuration, since the bonding apparatus does not have a complicated mechanism, the cost of the bonding apparatus can be reduced. Therefore, there is an effect that an inexpensive SOI (silicon on insulator) substrate can be manufactured.
　本発明は、上記の構成の接着装置を用いて製造される、上記第一の基板と上記第二の基板とが接着した接着基板も含む。 The present invention also includes an adhesive substrate manufactured by using the bonding apparatus having the above-described configuration, in which the first substrate and the second substrate are bonded.
　上記構成によれば、複雑な機構を有していない上記接着装置を用いているため、安価な接着基板を作製することができるという効果を奏する。 According to the above configuration, since the above-described bonding apparatus that does not have a complicated mechanism is used, there is an effect that an inexpensive bonded substrate can be manufactured.
　本発明は、複数の半導体基板を絶縁体基板に接着させ、ＳＯＩ基板を作製することに利用可能である。 The present invention can be used for manufacturing an SOI substrate by bonding a plurality of semiconductor substrates to an insulator substrate.
　１　Ｓｉウエハー（第一の基板）
　２　ガラス基板（第二の基板）
　３　送り出しロール（移動手段、回転部）
　４　巻き取りロール（移動手段、回転部）
　５　搬送ロボット（基板配送部）
　６　チャンバー（保持手段）
　６ａ　チャンバー上部
　６ｂ　チャンバー下部
　７　搬送用フィルム（シート）
　８　減圧口
　９　接着室
　１０　隣接室
　１１　ウエハー配置用フィルム
　１２　ＳＵＳフレーム
　１３　加圧口
　１４　バルブ
　１５　開放口
　１６　ガスボンベ
　１７　空気だまり
　２０、２１、２２、２３　接着装置
　３０　基板ステージ（保持手段）
　３１　剥離用ガイド（剥離手段）
　３２　突き上げピン（シート伸縮手段）
　３３　ステージ 1 Si wafer (first substrate)
2 Glass substrate (second substrate)
3 Feeding roll (moving means, rotating part)
4 Winding roll (moving means, rotating part)
5 Transport robot (substrate delivery section)
6 Chamber (holding means)
6a Upper chamber 6b Lower chamber 7 Conveying film (sheet)
8 Pressure reducing port 9 Bonding chamber 10 Adjacent chamber 11 Wafer arrangement film 12 SUS frame 13 Pressure port 14 Valve 15 Opening port 16 Gas cylinder 17 Air reservoir 20, 21, 22, 23 Bonding device 30 Substrate stage (holding means)
31 Guide for peeling (peeling means)
32 Push-up pin (sheet expansion / contraction means)
33 stages

Claims (10)

  1. 　少なくとも一部分に伸縮性を有しており、第一の基板を配することができるシートと、
    　上記第一の基板の接着対象である第二の基板を配することができる保持手段と、
    　上記シートを伸長させて、当該シートを配した上記第一の基板を上記第二の基板に近づけて、第一の基板を第二の基板に接着させるシート伸縮手段と、
    を備えていることを特徴とする接着装置。     A sheet having stretchability at least in part and on which the first substrate can be disposed;
    Holding means capable of arranging a second substrate to be bonded to the first substrate;
    Sheet stretching means for extending the sheet, bringing the first substrate on which the sheet is disposed closer to the second substrate, and bonding the first substrate to the second substrate;
    A bonding apparatus comprising:
  2. 　上記シートは、帯状に構成されていて、且つ、上記保持手段に正対する正対領域と、当該領域に隣接した、当該保持手段に正対していない非正対領域とを有しており、
    　上記接着装置は、
    　上記非正対領域に上記第一の基板を配する基板配送部と、
    　上記シートを移動させて、上記基板配送部によって配された上記第一の基板を上記第二の基板に正対するように搬送する移動手段と、
    を更に備えており、
    　上記移動手段は、回転することにより上記帯状のシートを移動させる回転部である、ことを特徴とする請求項１に記載の接着装置。     The sheet has a belt-like shape, and has a facing area that faces the holding means, and a non-facing area that is adjacent to the area and does not face the holding means,
    The bonding apparatus is
    A substrate delivery section for arranging the first substrate in the non-facing region;
    Moving means for moving the sheet to convey the first substrate disposed by the substrate delivery unit so as to face the second substrate;
    Is further provided,
    The bonding apparatus according to claim 1, wherein the moving unit is a rotating unit that moves the belt-like sheet by rotating.
  3. 　上記保持手段は、内部に上記シートを配して、当該シートによって当該内部が接着室、および、当該接着室に隣接する隣接室に分断されるチャンバーを形成し、上記チャンバーは或る上記接着室において、上記シートに配した上記第一の基板と、上記チャンバーに配した上記第二の基板とを接着する構成となっており、
    　上記シート伸縮手段は、上記接着室の減圧、および、上記隣接室の加圧の少なくともいずれかを行うことにより上記シートを伸長させて、上記或る接着室において、当該シートに配した上記第一の基板を上記第二の基板に近づけて、上記第一の基板を上記第二の基板に接着させる圧力変化手段である、ことを特徴とする請求項１に記載の接着装置。     The holding means arranges the sheet therein and forms a chamber in which the interior is divided into an adhesion chamber and an adjacent chamber adjacent to the adhesion chamber by the sheet, and the chamber is a certain adhesion chamber The first substrate disposed on the sheet and the second substrate disposed on the chamber are bonded,
    The sheet expansion / contraction means extends the sheet by performing at least one of depressurization of the bonding chamber and pressurization of the adjacent chamber, and the first expansion and distribution unit disposed on the sheet in the certain bonding chamber. The bonding apparatus according to claim 1, wherein the bonding apparatus is a pressure changing unit that brings the first substrate closer to the second substrate and bonds the first substrate to the second substrate.
  4. 　上記第一の基板と上記第二の基板とを接着させた後、
    　上記シートに対して力を加え、伸長している上記シートを縮めて、当該シートと上記第一の基板とを離す剥離手段を備えている、ことを特徴とする請求項１～３のいずれかに記載の接着装置。     After bonding the first substrate and the second substrate,
    The apparatus according to any one of claims 1 to 3, further comprising a peeling unit that applies a force to the sheet, shrinks the extending sheet, and separates the sheet from the first substrate. A bonding apparatus according to claim 1.
  5. 　上記圧力変化手段は、上記第一の基板と上記第二の基板とを接着させた後、上記接着室の加圧、および、上記隣接室の減圧の少なくともいずれかを行うことによって、上記伸長しているシートを縮めて当該シートと上記第一の基板とを離すように構成されている、ことを特徴とする請求項３に記載の接着装置。 After the first substrate and the second substrate are bonded to each other, the pressure changing unit performs the extension by performing at least one of pressurization of the bonding chamber and depressurization of the adjacent chamber. The bonding apparatus according to claim 3, wherein the bonding apparatus is configured to shrink the sheet and release the sheet from the first substrate.
  6. 　上記圧力変化手段は、上記隣接室の加圧を行うことによって上記シートを伸長させる構成であり、
    　上記圧力変化手段は、上記隣接室の外部から当該隣接室に気体を流入させることによって、上記加圧を行う、ことを特徴とする請求項３に記載の接着装置。     The pressure change means is configured to extend the sheet by pressurizing the adjacent chamber.
    The said pressure change means performs the said pressurization by making gas flow in into the said adjacent chamber from the outside of the said adjacent chamber, The bonding apparatus of Claim 3 characterized by the above-mentioned.
  7. 　上記シートは、上記第一の基板と上記第二の基板とが接触し始める際に第一の基板が第二の基板に対して傾斜した状態となるように構成されている、ことを特徴とする請求項１～６のいずれかに記載の接着装置。 The sheet is configured such that the first substrate is inclined with respect to the second substrate when the first substrate and the second substrate start to contact each other. The bonding apparatus according to any one of claims 1 to 6.
  8. 　上記保持手段は、上記第二の基板と上記第一の基板とが接触し始める際に第二の基板が第一の基板に対して傾斜した状態となるように、第二の基板を保持している、ことを特徴とする請求項１～７のいずれかに記載の接着装置。 The holding means holds the second substrate so that the second substrate is inclined with respect to the first substrate when the second substrate and the first substrate start to contact each other. The bonding apparatus according to any one of claims 1 to 7, characterized in that:
  9. 　上記第一の基板は、半導体基板であり、
    　上記第二の基板は、絶縁体基板であることを特徴とする請求項１～８のいずれかに記載の接着装置。     The first substrate is a semiconductor substrate,
    9. The bonding apparatus according to claim 1, wherein the second substrate is an insulator substrate.
  10. 　請求項１～９のいずれかに記載の接着装置を用いて製造される、上記第一の基板と上記第二の基板とが接着した接着基板。 An adhesive substrate produced by using the bonding apparatus according to any one of claims 1 to 9, wherein the first substrate and the second substrate are bonded to each other.
PCT/JP2012/073952 2011-10-07 2012-09-19 Bonding device and bonded substrate manufactured using same WO2013051395A1 (en)

Applications Claiming Priority (2)

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JP2011-223247 2011-10-07

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007235114A (en) * 2006-02-03 2007-09-13 Semiconductor Energy Lab Co Ltd Apparatus and method for manufacturing semiconductor device
JP2009231819A (en) * 2008-02-26 2009-10-08 Semiconductor Energy Lab Co Ltd Method of manufacturing soi substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007235114A (en) * 2006-02-03 2007-09-13 Semiconductor Energy Lab Co Ltd Apparatus and method for manufacturing semiconductor device
JP2009231819A (en) * 2008-02-26 2009-10-08 Semiconductor Energy Lab Co Ltd Method of manufacturing soi substrate

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