WO2013046338A1 - Cellule solaire et module de cellules solaires - Google Patents

Cellule solaire et module de cellules solaires Download PDF

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Publication number
WO2013046338A1
WO2013046338A1 PCT/JP2011/072080 JP2011072080W WO2013046338A1 WO 2013046338 A1 WO2013046338 A1 WO 2013046338A1 JP 2011072080 W JP2011072080 W JP 2011072080W WO 2013046338 A1 WO2013046338 A1 WO 2013046338A1
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
layer
metal layer
conductive oxide
cell module
Prior art date
Application number
PCT/JP2011/072080
Other languages
English (en)
Japanese (ja)
Inventor
優也 中村
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to PCT/JP2011/072080 priority Critical patent/WO2013046338A1/fr
Publication of WO2013046338A1 publication Critical patent/WO2013046338A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the present invention relates to a solar cell and a solar cell module.
  • Patent Document 1 describes a solar cell in which the back electrode covering the back surface of the photoelectric conversion unit is made of aluminum, titanium, or silver as an example.
  • the solar cell module according to the present invention includes a solar cell and a sealing layer.
  • the solar cell includes a photoelectric conversion unit and a metal layer disposed on one main surface of the photoelectric conversion unit.
  • the sealing layer seals the solar cell.
  • the solar cell includes a conductive oxide layer.
  • the conductive oxide layer is disposed between the metal layer and the sealing layer.
  • the solar cell according to the present invention includes a photoelectric conversion part, a metal layer, and a conductive oxide layer.
  • the metal layer is disposed on substantially the entire main surface of the photoelectric conversion unit.
  • the conductive oxide layer is disposed on the metal layer.
  • a solar cell module having improved reliability can be provided.
  • FIG. 1 is a schematic cross-sectional view of the solar cell module according to the first embodiment.
  • FIG. 2 is a schematic cross-sectional view of the solar cell in the first embodiment.
  • FIG. 3 is a schematic cross-sectional view in which a part of the solar cell in the first embodiment is enlarged.
  • FIG. 4 is a schematic cross-sectional view of the solar cell in the second embodiment.
  • the solar cell module 1 includes a plurality of solar cells 10.
  • the plurality of solar cells 10 are electrically connected by the wiring material 21.
  • the wiring member 21 and the solar cell 10 are bonded by an adhesive layer 22.
  • the adhesive layer 22 is, for example, a cured product of solder or a resin adhesive.
  • the plurality of solar cells 10 are sealed with a sealing material 23 between the first protective member 24 and the second protective member 25.
  • the plurality of solar cells 10 are arranged such that the light receiving surface 10a faces the first protective member 24 side and the back surface 10b faces the second protective member 25 side. That is, light enters the solar cell module 1 from the first protective member 24 side.
  • the first protective member 24 can be made of a light-transmitting member such as light-transmitting glass or plastic.
  • the 2nd protection member 25 can be comprised by weather-resistant members, such as glass and plastics which have translucency, a resin film, and the resin film which interposed metal foil, for example.
  • the sealing material 23 is, for example, an olefin resin, a styrene resin, a vinyl chloride resin, an ester resin, a urethane resin, an ionomer resin, a silicone resin, an acrylic resin, an epoxy resin, an ethylene / vinyl acetate copolymer. (EVA), polyvinyl butyral (PVB) and the like.
  • the solar cell module 1 may be provided with a terminal box on the second protective member 25 for taking out the generated power of the plurality of solar cells 10 to the outside. Moreover, the solar cell module 1 may be provided with a metal or resin frame at the periphery.
  • the solar cell 10 includes a photoelectric conversion unit 11, a first electrode 12, and a second electrode 13.
  • the photoelectric conversion unit 11 is a member that generates carriers such as holes and electrons when receiving light.
  • the photoelectric conversion unit 11 includes a substrate 11a made of a p-type or n-type semiconductor material.
  • the substrate 11a can be made of a semiconductor material such as crystalline silicon or GaAs.
  • a first semiconductor layer 11b having the first conductivity type is disposed on the main surface of the substrate 11a on the light receiving surface 10a side, and the second conductive layer is disposed on the main surface of the substrate 11a on the back surface 10b side.
  • a second semiconductor layer 11c having a mold is disposed.
  • the first conductivity type is one of the p-type and n-type
  • the second conductivity type is the other conductivity type.
  • the first semiconductor layer 11b can be made of, for example, amorphous silicon having the first conductivity type.
  • the second semiconductor layer 11c can be made of amorphous silicon having the second conductivity type, for example.
  • a substantially intrinsic i-type semiconductor layer having a thickness that does not substantially contribute to power generation for example, about several to 250 inches may be disposed.
  • a substantially intrinsic i-type semiconductor layer having a thickness that does not substantially contribute to power generation for example, about several to 250 inches is disposed.
  • the i-type semiconductor layer can be made of, for example, i-type amorphous silicon.
  • the first translucent conductive layer 11d is disposed on the first semiconductor layer 11b.
  • a second light-transmitting conductive layer 11e is disposed on the second semiconductor layer 11c.
  • the first light-transmitting conductive layer 11d and the second light-transmitting conductive layer 11e can be made of a light-transmitting conductive oxide such as indium oxide, zinc oxide, or tin oxide.
  • the photoelectric conversion unit 11 is configured by the first light-transmitting conductive layer 11d, the first semiconductor layer 11b, the substrate 11a, the second semiconductor layer 11c, and the second light-transmitting conductive layer 11e. Has been.
  • the first electrode 12 is disposed on the first main surface 11A of the photoelectric conversion unit 11, and the second electrode 13 is disposed on the second main surface 11B. Is arranged.
  • One of the first and second electrodes 12 and 13 is an electrode that collects minority carriers, and the other is an electrode that collects majority carriers.
  • 11 A of 1st main surfaces are located in the light-receiving side of the photoelectric conversion part 11, and 2nd main surface 11B is located in the back side.
  • the first electrode 12 is made of a metal material in order to reduce resistance loss.
  • the first electrode 12 can be formed by screen printing using a conductive paste such as silver paste, a sputtering method, a vapor deposition method, or the like. Further, the first electrode 12 has a light transmitting shape such as a comb shape having a bus bar portion and a finger portion so that light can enter the light receiving surface 10a.
  • the second electrode 13 has at least a metal layer 13a and a conductive oxide layer 13b disposed on the metal layer 13a. On the conductive oxide layer 13b, a terminal portion 13c for connection with the wiring member 21 may be provided or may not be provided.
  • the metal layer 13a is a member having light reflectivity disposed on substantially the entire surface of the second main surface 11B.
  • the metal layer 13a reflects, to the photoelectric conversion unit 11 side, light that has passed through the photoelectric conversion unit 11 out of light incident from the first main surface 11A side. As a result, the amount of light received by the photoelectric conversion unit 11 increases, so that the photoelectric conversion characteristics of the solar cell 1 can be improved.
  • the conductive oxide layer 13b is disposed on substantially the entire surface of the metal layer 13a.
  • the conductive oxide layer 13b suppresses contact between the metal layer 13a and the sealing layer 23 as described later.
  • the terminal portion 13c may or may not be provided, but for example, is provided in a linear shape extending along the x direction that is the direction in which the wiring member 21 extends.
  • the terminal part 13c can be formed by apply
  • the wiring member 21 and the conductive oxide layer 13b may be electrically connected directly or may be indirectly electrically connected via the terminal portion 13c. Further, the wiring member 21 may be directly electrically connected to both the conductive oxide layer 13b and the terminal portion 13c.
  • the main surface 11a1 on the back surface 10b side of the substrate 11a has irregularities.
  • the unevenness is simultaneously formed when a texture structure for preventing light reflection is formed on the main surface of the substrate 11a on the light receiving surface 10a side.
  • the second main surface 11B of the photoelectric conversion unit 11 is also main. It has a concavo-convex structure reflecting the shape of the surface 11a1.
  • the metal layer 13a has a thickness greater than that of the second semiconductor layer 11c and the second light-transmitting conductive layer 11e. For this reason, the surface of the conductive oxide layer 13b on the metal layer 13a has a concavo-convex structure that is slightly gentler than the concavo-convex structure of the main surface 11a1.
  • the metal layer 13a can be made of an appropriate conductive material such as a metal such as Ag, Cu, Au, Pt, or Sn or an alloy containing at least one of these metals.
  • the metal layer 13a preferably contains at least one of Ag and Cu from the viewpoint of reducing resistance loss and improving light reflectivity. Furthermore, from the viewpoint of manufacturing cost, the metal layer 13a preferably contains Cu.
  • the metal layer and the sealing layer 23 are in direct contact with each other.
  • moisture that has entered the solar cell module from the outside passes through the sealing layer 23 and reaches the metal layer, and as a result, the electrical characteristics of the second electrode 13 may be degraded. is there.
  • the material constituting the metal layer may diffuse into the sealing layer 23 and the characteristics of the sealing layer 23 may be deteriorated.
  • the metal layer contains Cu, discoloration or deterioration of the sealing layer 23 is likely to occur due to diffusion of Cu.
  • the solar cell module 1 includes a conductive oxide layer 13b disposed between the metal layer 13a and the sealing layer 23.
  • the second electrode 13 of the solar cell 10 includes a conductive oxide layer 13b that covers substantially the entire surface of the metal layer a. Since the conductive oxide layer 13b can suppress direct contact between the metal layer 13a and the sealing layer 23, the reliability of the solar cell module can be improved.
  • a solar cell module having good output characteristics and improved reliability can be provided at low cost. Is industrially superior.
  • the thickness of the metal layer 13a is not particularly limited. However, if the thickness of the metal layer 13a is too thin, the light reflectivity decreases and the resistance loss increases. For this reason, the thickness of the metal layer 13a is preferably 100 nm or more, and more preferably 300 nm or more. Further, if the metal layer 13a is too thick, the metal layer 13a is likely to be peeled off due to an increase in internal stress. Or the curvature of the board
  • the metal layer 13a can be formed by various methods such as plating, sputtering, vapor deposition, CVD, and application of conductive paste. In consideration of light reflectivity, the metal layer 13a is preferably formed by sputtering or vapor deposition.
  • the thickness of a layer shall mean the dimension in the z direction which is a lamination direction in the center part in the planar view of the solar cell 10, and the part in which the bus-bar part is not provided.
  • the thickness of a layer shall be the thickness in a top part.
  • the conductive oxide layer 13b can be made of a conductive oxide such as indium oxide, zinc oxide, or tin oxide, similarly to the first and second light-transmitting conductive layers 11d and 11e.
  • a conductive oxide has a property that resistance increases as light transmissivity increases. For example, when the concentration of the dopant added when forming the conductive oxide layer is increased, the resistance is decreased while the light transmittance is decreased. Therefore, in order to reduce the resistance loss of the second electrode 13, it is preferable that the conductive oxide layer 13b has a lower resistance than the second translucent conductive layer 11e.
  • the same material as the base material of the second translucent conductive layer 11e is used as the base material of the conductive oxide layer 13b, and the same material is used as the dopant.
  • the conductive oxide layer 13b of low resistance can be obtained by making the dopant density
  • the metal layer 13a is disposed on a partial region of the second main surface 11B, and the conductive oxide layer 13b is made of a metal
  • the layer 13a is disposed so as to cover the upper surface 13a1 and the side surface 13a2. For this reason, the contact with the metal layer 13a and the sealing material 23 is more effectively suppressed by the conductive oxide layer 13b. Therefore, a solar cell module having improved reliability can be provided.
  • the conductive oxide layer 13b may be in contact with the edge of the second main surface 11B. In this case, a more improved solar cell module can be provided.
  • the photoelectric conversion part is not particularly limited as long as it has a substrate made of a semiconductor material.
  • the photoelectric conversion unit includes a substrate made of a semiconductor material, a p-type region formed by diffusing a p-type dopant on one main surface of the substrate, and an n-type formed by diffusing an n-side dopant on the other main surface of the substrate. It may have a mold region.

Abstract

La présente invention porte sur un module de cellules solaires ayant une fiabilité améliorée. Le module de cellules solaires comporte des cellules solaires et une couche d'encapsulation. Chacune des cellules solaires comprend une unité de conversion photoélectrique et une couche métallique disposée sur une surface principale de l'unité de conversion photoélectrique. La couche d'encapsulation encapsule les cellules solaires. Chacune des cellules solaires comporte une couche d'oxyde conductrice. La couche d'oxyde conductrice est disposée entre la couche métallique et la couche d'encapsulation.
PCT/JP2011/072080 2011-09-27 2011-09-27 Cellule solaire et module de cellules solaires WO2013046338A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2011/072080 WO2013046338A1 (fr) 2011-09-27 2011-09-27 Cellule solaire et module de cellules solaires

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2011/072080 WO2013046338A1 (fr) 2011-09-27 2011-09-27 Cellule solaire et module de cellules solaires

Publications (1)

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WO2013046338A1 true WO2013046338A1 (fr) 2013-04-04

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05145096A (ja) * 1991-11-22 1993-06-11 Asahi Glass Co Ltd 透過型太陽電池
JPH11103079A (ja) * 1997-09-26 1999-04-13 Sanyo Electric Co Ltd 集積型光起電力装置の製造方法
JPH11103081A (ja) * 1997-09-29 1999-04-13 Sanyo Electric Co Ltd 光起電力素子
JP2001053305A (ja) * 1999-08-12 2001-02-23 Kanegafuchi Chem Ind Co Ltd 非単結晶シリコン系薄膜光電変換装置
JP2005175449A (ja) * 2003-11-19 2005-06-30 Sharp Corp 薄膜太陽電池及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05145096A (ja) * 1991-11-22 1993-06-11 Asahi Glass Co Ltd 透過型太陽電池
JPH11103079A (ja) * 1997-09-26 1999-04-13 Sanyo Electric Co Ltd 集積型光起電力装置の製造方法
JPH11103081A (ja) * 1997-09-29 1999-04-13 Sanyo Electric Co Ltd 光起電力素子
JP2001053305A (ja) * 1999-08-12 2001-02-23 Kanegafuchi Chem Ind Co Ltd 非単結晶シリコン系薄膜光電変換装置
JP2005175449A (ja) * 2003-11-19 2005-06-30 Sharp Corp 薄膜太陽電池及びその製造方法

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