WO2013039020A1 - Procédé permettant de fabriquer un dispositif de conversion photoélectrique, électrode destinée à un dispositif de conversion photoélectrique, dispositif de conversion photoélectrique et dispositif électroluminescent - Google Patents

Procédé permettant de fabriquer un dispositif de conversion photoélectrique, électrode destinée à un dispositif de conversion photoélectrique, dispositif de conversion photoélectrique et dispositif électroluminescent Download PDF

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WO2013039020A1
WO2013039020A1 PCT/JP2012/072999 JP2012072999W WO2013039020A1 WO 2013039020 A1 WO2013039020 A1 WO 2013039020A1 JP 2012072999 W JP2012072999 W JP 2012072999W WO 2013039020 A1 WO2013039020 A1 WO 2013039020A1
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Prior art keywords
wire
photoelectric conversion
conductive wire
electrode
conductive
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PCT/JP2012/072999
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English (en)
Japanese (ja)
Inventor
善孝 長草
裕之 潮田
洋一 川村
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トヨタ自動車東日本株式会社
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Priority claimed from PCT/JP2011/071049 external-priority patent/WO2013038535A1/fr
Priority claimed from PCT/JP2011/071051 external-priority patent/WO2013038537A1/fr
Application filed by トヨタ自動車東日本株式会社 filed Critical トヨタ自動車東日本株式会社
Priority to JP2013533649A priority Critical patent/JP5957787B2/ja
Publication of WO2013039020A1 publication Critical patent/WO2013039020A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/791—Starburst compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method for producing a photoelectric conversion device, an electrode for a photoelectric conversion device used for the photoelectric conversion device, a photoelectric conversion device using the same, and a light emitting device.
  • a photoelectric conversion device is a device that converts light into electrical energy and a device that converts electrical energy into light.
  • Examples of the former include solar cells, and examples of the latter include light emitting diodes.
  • the surface layer of the wafer is made an n-type semiconductor by vapor phase diffusion or implantation of n-type impurity ions into a p-type single crystal wafer.
  • a pn junction and a pin junction are formed.
  • a solar cell having a sandwich structure is manufactured by forming a front electrode and a back electrode.
  • a chalcopyrite solar cell will be described as an example. This is a solar cell provided with a CIGS layer made of a chalcopyrite compound (Cu (In + Ga) Se 2 ) containing Group I, Group III, and Group VI elements as a p-type light absorption layer (for example, Patent Documents) 1).
  • a CIGS layer made of a chalcopyrite compound (Cu (In + Ga) Se 2 ) containing Group I, Group III, and Group VI elements as a p-type light absorption layer (for example, Patent Documents) 1).
  • This solar cell with a CIGS layer generally has a back electrode 1 layer, which is a positive electrode made of a Mo metal layer, on a glass substrate such as a soda lime glass (SLG) substrate, and Na unevenness caused by the SLG substrate.
  • the multilayer structure includes a Na dip layer for prevention, a CIGS light absorption layer, an n-type buffer layer, and an outermost surface layer formed of a transparent electrode layer serving as a negative electrode.
  • the n-type buffer layer is made of CdS, ZnO, InS or the like
  • the transparent electrode layer is made of ZnOAl or the like.
  • the CIGS light absorbing layer is obtained by the following process. That is, the substrate itself provided with the In layer and the Cu—Ga layer as a precursor is accommodated in the annealing chamber and preheated. Thereafter, the precursor is converted into a CIGS layer by raising the temperature of the chamber to a temperature range of 500 to 520 ° C. while introducing H 2 Se gas through a gas introducing tube inserted into the annealing chamber.
  • an organic thin film solar cell using an organic semiconductor can be formed by a simple film forming method, and thus has attracted attention as a solar cell that is easy to manufacture and suitable for mass production.
  • Various organic thin-film solar cells having so-called bulk heterojunction structures and nanophase separation structures have been proposed. In these structures, since a wide contact interface between the p-type organic semiconductor and the n-type organic semiconductor can be secured, the photoelectric conversion efficiency can be improved.
  • Such an organic thin film solar cell is prepared, for example, by dissolving a hole transport material and an electron transport material in various solvents to prepare a material-containing liquid, and depositing the material-containing liquid on the surface of the electrode. It is manufactured by forming a photoelectric conversion layer including an organic semiconductor or an n-type organic semiconductor.
  • Patent Document 2 proposes an organic thin film solar cell in which an anode, a photoelectric conversion layer having a bulk heterojunction structure, and a cathode are sequentially laminated on one surface of a substrate.
  • a cathode is formed at a low temperature but also an organic metal by forming a laminated structure in which a cathode made of silver oxide and a reducing agent and an electron transport layer doped with an organic metal are applied in the vicinity of the cathode. It is said that the junction between the doped layer and the cathode is improved.
  • Patent Document 3 proposes a method of manufacturing a photovoltaic element or the like by joining a mesh electrode body woven with metal wires onto the surface of a photovoltaic body.
  • Patent Document 2 by wiring a metal wire, the aspect ratio between the thinness and thickness of the wire can be appropriately adjusted as compared with the wiring using printing, lithography, etc., the cost can be reduced, and the mesh can be woven. It is said that wiring can be speeded up.
  • the electrode on the light irradiation side needs to have good light transmittance and low electric resistance, and the electrode on the light irradiation side has to be formed by vapor deposition or plating of an expensive rare metal. Along with that, the manufacturing process was also complicated.
  • an organic EL material is confined between an aluminum plate and a glass substrate with ITO, and the outer peripheral edge is sealed, and the aluminum plate and ITO The organic EL was made to emit light by applying a voltage between the two. Moreover, the flexibility was provided to the light-emitting device using the aluminum foil instead of the aluminum plate, and using the transparent resin sheet with ITO instead of the glass substrate with ITO.
  • the liquid crystal display device is provided with a liquid crystal panel on a backlight illumination unit.
  • the liquid crystal panel is configured by bonding a TFT (Thin Film Transistor) substrate and a CF (Color Filer) substrate together and enclosing liquid crystal molecules therebetween.
  • the TFT substrate is a substrate on which TFT elements are formed in a matrix
  • the CF substrate is a substrate on which a color filter is formed.
  • the present invention provides a manufacturing method capable of easily manufacturing a flexible photoelectric conversion device while ensuring the performance of photoelectric conversion, and an electrode structure for producing a photoelectric conversion device that can be suitably used for this manufacturing method.
  • the first purpose is to provide it.
  • a second object of the present invention is to provide an electrode structure for a photoelectric conversion device that does not require light transmission as an electrode material, and a photoelectric conversion device using the same.
  • a third object of the present invention is to provide a light-emitting device with a simple structure and less flexibility.
  • a material-containing liquid containing at least one of a hole transport material and an electron transport material in a solvent is attached to an electrode structure.
  • a method of forming an organic semiconductor in contact with the electrode structure from a material adhered to the electrode structure, and a plurality of conductive wires and an arrangement adjusting wire for adjusting an arrangement interval of the plurality of conductive wires are prepared by using a solvent capable of dissolving the arrangement adjusting wire, and bringing the material containing liquid into contact with the electrode structure.
  • the organic semiconductor is formed by dissolving and attaching at least one material to the conductive wire. In this manufacturing method, it is particularly preferable to manufacture an organic semiconductor thin film solar cell.
  • an electrode structure in which conductive wires are spaced apart from each other by a predetermined interval by interposing an arrangement adjusting wire between conductive wires.
  • An electrode structure comprising a plurality of vertical wires made of a plurality of conductive wires and arrangement adjusting wires and a plurality of horizontal wires arranged intersecting the plurality of vertical wires can be prepared, and the arrangement adjusting wires can be dissolved. It is preferable to prepare the material-containing liquid using a solvent that cannot dissolve the horizontal wire.
  • a material-containing liquid containing a hole transport material and an electron transport material is prepared and brought into contact with the electrode structure, and the p-type organic semiconductor is formed in a state of being connected to some conductive wires, and n It is preferable to form the type organic semiconductor in a state where it is connected to the other part of the conductive wire.
  • the material-containing liquid may be attached to one side of the electrode structure.
  • an electrode structure having a plurality of electrode portions in which a plurality of conductive wires are integrated together with a placement adjusting wire and having a plurality of electrode portions opposed to each other is prepared, and a placement adjusting wire is prepared.
  • the material-containing liquid may be prepared using a solvent that can dissolve the support wire but cannot dissolve the support wire.
  • the electrode for producing a photoelectric conversion device used in such a production method is preferably one in which the solubility of the arrangement adjusting wire in the solvent for producing the photoelectric conversion device is larger than that of the conductive material.
  • an electrode for a photoelectric conversion device of the present invention is an electrode provided on one side of a photoelectric conversion layer that converts light and electric energy, and includes a plurality of vertical wires and a plurality of vertical wires.
  • the vertical wire and the horizontal wire intersect each other to form a net, and the vertical wire includes a plurality of first conductive wires, a plurality of second conductive wires, and a plurality of The first conductive wire and the second conductive wire are alternately arranged, and the first insulating wire is provided between the first conductive wire and the second conductive wire.
  • the horizontal wire is made of a second insulating wire, wherein the first conductive wire functions as a p-type electrode, and the second conductive wire functions as an n-type electrode.
  • a plurality of the first insulating wire rods may be provided between the first conductive wire rod and the second conductive wire rod 3 described above.
  • a photoelectric conversion device of the present invention includes a photoelectric conversion layer that converts light and electric energy, and a pair of electrodes provided on one side of the photoelectric conversion layer, One electrode and the other electrode are provided side by side, a p-layer organic semiconductor made of a hole transport material is provided on the one electrode, and an electron transport material is provided on the other electrode.
  • An n-layer organic semiconductor is provided, the one electrode functions as a p-type electrode, and the other electrode functions as an n-type electrode.
  • the p-layer organic semiconductor and the n-layer organic semiconductor are preferably covered with a transparent protective layer.
  • a p-layer organic semiconductor made of a hole transport material is provided on the first conductive wire with respect to the optoelectronic device electrode, and an electron transport material is provided on the second conductive wire.
  • the p-layer organic semiconductor and the n-layer organic semiconductor may be alternately arranged, for example, alternately formed on the same surface.
  • the same surface may be either a virtual surface or a substrate surface, but when formed on the substrate surface, it may be a flat substrate or a flexible substrate that can be bent.
  • the light-emitting device of the present invention is configured by arranging a light-emitting layer made of an organic EL material and the light-emitting layer, and alternately arranging one conductive wire and the other conductive wire. Alternating electrodes.
  • an arrangement adjusting wire extending in the same direction is provided between one conductive wire and the other conductive wire, and the arrangement adjusting wire has an interval between the one conductive wire and the other conductive wire. maintain.
  • a crossing wire extends in a direction crossing one conductive wire and the other conductive wire, and the crossing wire, one conductive wire, and the other conductive wire are knitted.
  • a crossing wire extends in a direction crossing one conductive wire, the other conductive wire, and the arrangement adjusting wire, and the crossing wire, one conductive wire, the other conductive wire, and the arrangement adjustment. Wires for use are knitted.
  • one wiring part in which one end of one conductive wire is connected to each other and the other wiring part in which the other end of the other conductive wire is connected to each other, one wiring part and the other wiring part When a voltage is applied to the light emitting layer, the light emitting layer emits light.
  • the method for manufacturing a photoelectric conversion device of the present invention since an electrode structure in which a plurality of conductive wires are integrally connected together with a wire for adjusting arrangement is used, even a conductive wire having flexibility can be easily arranged.
  • the arrangement interval of the plurality of conductive wires can be easily adjusted by the arrangement adjusting wire, and the state can be stably maintained at the time of manufacture. For this reason, it is possible to prevent variation in the arrangement interval of the plurality of conductive wires and to ensure the performance of photoelectric conversion.
  • the hole transport material of the material containing liquid is disposed at the portion where the arrangement adjusting wire is arranged.
  • an electron transport material can be arranged. Therefore, many organic semiconductors can be uniformly arranged between the conductive wires, and the performance of photoelectric conversion can be ensured. Therefore, it is possible to easily manufacture a photoelectric conversion device having flexibility while ensuring the performance of photoelectric conversion.
  • a plurality of conductive wires are integrated together with the arrangement adjusting wire, and the solubility of the arrangement adjusting wire in the solvent for producing the photoelectric conversion device is more than the conductive material. Since it is large, it can be suitably used to produce the photoelectric conversion device as described above.
  • the electrode has an alternately arranged planar electrode structure in which one electrode functioning as a p-type electrode and the other electrode functioning as an n-type electrode are formed on the same plane. Therefore, the transparent electrode material conventionally required as the electrode material becomes unnecessary.
  • a p-layer organic semiconductor is laminated on one electrode and an n-layer organic semiconductor is laminated thereon to form a pn junction, and the other electrode is transparent on the n-layer organic semiconductor. There is no need to sequentially stack the electrodes to form a photoelectric conversion device.
  • the electrode structure and photoelectric conversion device of the present invention can be produced on a flexible substrate such as a glass substrate. Since an organic semiconductor can be provided on the electrode by coating, the manufacturing process is not complicated, and the electrode can be manufactured at low cost.
  • the alternately arranged electrodes are provided in the light emitting layer.
  • one and the other conductive wires are alternately arranged, and if necessary, an arrangement adjusting wire is provided between them or another wire intersects with each other.
  • the resin molded sheet or film itself it is easily deformable such as curved by an external force.
  • the organic EL material is in close contact with the one and the other conductive wires themselves, the light emission performance is hardly affected even if they are curved.
  • the structure is extremely simple, and the productivity can be improved and the cost can be reduced.
  • FIG. 1st Embodiment of this invention It is sectional drawing of the photoelectric conversion device which concerns on 1st Embodiment of this invention. It is a perspective view which shows the electrode structure in the photoelectric conversion device shown in FIG. It is an enlarged view of the area
  • the photoelectric conversion device will be described assuming a solar cell as a device that converts light into electric energy, but the present invention can be similarly applied to a device that converts electric energy into light energy. .
  • FIG. 1 is a cross-sectional view of a photoelectric conversion device 1 according to the first embodiment of the present invention
  • FIG. 2 is a perspective view of the photoelectric conversion device.
  • the photoelectric conversion device 1 includes an insulating substrate 11, an electrode 12 provided on the upper surface of the substrate 11, a photoelectric conversion layer 13 that covers the electrode 12, and a protective layer 14 that covers the upper surface of the photoelectric conversion layer 13. It is configured. In FIG. 2, the display of the photoelectric conversion layer 13 and the protective layer 14 is omitted.
  • the base material 11 is formed in a sheet shape and has flexibility. For example, what was formed as a flexible substrate by PET etc. is used. In the first embodiment, as shown in FIG. 2, the base material 11 has a rectangular outline.
  • the short side is referred to as the first side 11A
  • the long side is referred to as the second side 11B.
  • the electrode 12 will be described with reference to FIG.
  • the electrode 12 extends along the first side 11 ⁇ / b> A of the base 11, and further has a plurality of vertical wires 12 ⁇ / b> A arranged at a predetermined pitch in the extending direction of the second side 11 ⁇ / b> B, and the second side 11 ⁇ / b> B of the base 11. And a plurality of horizontal wires 12B arranged at a predetermined pitch in the extending direction of the first side 11A.
  • the vertical wire 12A and the horizontal wire 12B are woven so as to intersect each other. That is, the electrode 12 is formed in a plain weave net shape.
  • first conductive wire 121, the second conductive wire 122, and the first insulating wire 123 are used. As shown in FIG. 2, the first conductive wire 121 and the second conductive wire 122 are alternately arranged on the substrate 11, and the first conductive wire 121 and the second conductive wire 122 are arranged between the first conductive wire 121 and the second conductive wire 122.
  • One insulating wire 123 is provided.
  • interval of the 1st conductive wire 121 and the 2nd conductive wire 122 is equivalent to the diameter of the cross section of the 1st insulated wire 123 pinched
  • a gap is provided between the members.
  • first conductive wire 121 and the second conductive wire 122 for example, a metal wire such as a copper wire or a stainless wire, a wire obtained by performing metal plating on the surface of a chemical fiber, or the like can be used.
  • One end 121E of each first conductive wire 121 is connected to the first bus bar 121A as shown in FIG.
  • Each second conductive wire 122 is connected to the second bus bar 122A at an end 122E located on the other end 121F side of the first conductive wire 121.
  • the first insulating wire 123 is made of a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin.
  • a second insulating wire is used as the horizontal wire 12B extending along the second side 11B. Similar to the first insulating wire 123, the second insulating wire is made of a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin.
  • a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin.
  • the first conductive wire 121, the second conductive wire 122, the first insulating wire 123 and the second insulating wire are set to a thickness of about 20 ⁇ m to 30 ⁇ m.
  • FIG. 3 is a schematic enlarged view of a circle A region in FIG.
  • the photoelectric conversion layer 13 is provided on one electrode, that is, the p-layer organic semiconductor 13A made of a hole transport material provided on the first conductive wire 121, and on the second conductive wire 122 serving as the other electrode, and electron transport.
  • an n-layer organic semiconductor 13B made of a material. Therefore, one first conductive wire 121 functions as a p-type electrode, and the other second conductive wire 122 functions as an n-type electrode.
  • the p-layer organic semiconductor 13A and the n-layer organic semiconductor 13B form a pn junction.
  • the p-layer organic semiconductor 13A is formed of a hole transport material.
  • a hole transport material in addition to triphenylamine (TAPC) represented by the chemical formula (1), TPD and other aromatic amines which are dimers of triphenylamine represented by the chemical formula (2), the chemical formula (3) ⁇ -NPD represented by formula (4), (DTP) DPPD represented by formula (4), m-MTDATA represented by formula (5), HTM1 represented by formula (6), 2-TNATA represented by formula (7) TPTE1 represented by the chemical formula (8), TCTA represented by the chemical formula (9), NTPA represented by the chemical formula (10), spiro-TAD represented by the chemical formula (11), TFREL represented by the chemical formula (12), etc. It is done.
  • the n-layer organic semiconductor 13B is formed of an electron transport material.
  • the electron transport material include Alq 3 represented by the chemical formula (13), BCP represented by the chemical formula (14), an oxadiazole derivative represented by the chemical formula (15), and an oxadiazole dimer represented by the chemical formula (16).
  • Alq 3 represented by the chemical formula (13)
  • BCP represented by the chemical formula (14)
  • triazole derivative represented by chemical formula (18) phenylquinoxaline derivative represented by chemical formula (19), silole derivative represented by chemical formula (20), and the like.
  • the first conductive wire 121 and the second conductive wire 122 constituting the photoelectric conversion device electrode 12 are formed side by side on the substrate 11, and the first conductive wire 121 and the second conductive wire 122 are further formed.
  • the p-layer organic semiconductor 13 ⁇ / b> A and the n-layer organic semiconductor 13 ⁇ / b> B are formed side by side on the substrate 11, similarly to the first conductive wire 121 and the second conductive wire 122. Therefore, the protective layer 14 can be formed without providing an electrode on the light incident surface as in Patent Document 2.
  • the protective layer 14 is provided so as to cover the p-layer organic semiconductor 13A and the n-layer organic semiconductor 13B.
  • the protective layer 14 is formed of, for example, a resin or the like as long as it is a material that transmits irradiation light such as sunlight.
  • a method for producing the photoelectric conversion device 1 shown in FIG. First, the base material 11 is prepared. Next, a first conductive wire 121, a second conductive wire 122, a 171 insulating wire 123, and a second insulating wire are prepared and plain woven. The electrode 15 formed by plain weaving is fixed on the base material 11 with, for example, an adhesive. Thereafter, a hole transport material to be the p-layer organic semiconductor 13A is applied to a predetermined portion, for example, the first conductive wire 121 as one electrode. For the application, for example, a printing method using an inkjet printer can be applied.
  • an electron transport material to be an n-layer organic semiconductor 13B is applied between the p layer and the p layer, for example, on the second conductive wire 122 as the other electrode.
  • a printing technique using an ink jet printer can be used as in the case of the p-layer organic semiconductor 13A.
  • a pn junction is formed by the p-layer organic semiconductor 13A and the n-layer organic semiconductor 13B.
  • the n-layer organic semiconductor 13B may be applied, and then the p-layer organic semiconductor 13A may be applied.
  • the photoelectric conversion device 1 is manufactured by forming the protective layer 14 by painting or the like. Note that the method is not limited to the above-described method as long as the photoelectric conversion device 1 illustrated in FIG. 1 is manufactured.
  • the 1st conductive wire 121 and the 2nd conductive wire 122 which comprise the electrode 12 for photoelectric conversion devices are formed on the base material 11, Furthermore, the 1st conductive wire 121 and the 2nd conductive wire are formed.
  • a p-layer organic semiconductor 13 ⁇ / b> A and an n-layer organic semiconductor 13 ⁇ / b> B are formed on the substrate 11 so as to cover the wire 122. Therefore, the protective layer 14 can be formed without providing an electrode on the light incident surface as in Patent Document 2. Therefore, it is unnecessary to configure the electrode provided on the light irradiation side of Patent Document 2 with a transparent electrode, and it is not necessary to use a rare metal for the transparent electrode as a material. Al or the like can be used.
  • the electrode 12 is comprised with the net
  • the first embodiment of the present invention can be implemented with appropriate modifications within the scope of the present invention.
  • a configuration in which one first insulating wire 123 is provided between the first conductive wire 121 and the second conductive wire 122 has been described, but a plurality of the first insulated wire 123 may be provided.
  • the photoelectric conversion device may be configured by omitting the base material 11.
  • FIG. 4 is a view schematically showing a light emitting device according to the second embodiment of the present invention.
  • FIG. 5 is a diagram schematically showing a cross section of the light emitting portion of the light emitting device shown in FIG. 4, and
  • FIG. 6 is a diagram schematically showing the alternately arranged electrodes of the light emitting portion shown in FIG.
  • the light-emitting device 1 shown in 2nd Embodiment of this invention is equipped with the light emission part 2 and the control part 3, as shown in FIG.
  • the light emitting unit 2 includes a light emitting layer 13 made of an organic EL material and alternating electrodes 12 provided in the light emitting layer 13.
  • the light emitting layer 13 is formed in layers with various organic EL materials.
  • the alternating electrode 12 is configured such that one conductive wire 121 and the other conductive wire 122 extend in the same direction and are alternately arranged at intervals.
  • the photoelectric conversion device is the light emitting device 1
  • the photoelectric conversion layer is the light emitting layer 13
  • the photoelectric conversion device electrodes are the alternately arranged electrodes 12.
  • the alternating electrodes 12 may be provided at substantially the center in the thickness direction of the light emitting layer 13, but may be closer to either the upper or lower surface from the center surface.
  • the light emitting unit 2 may be provided with a thin transparent protective layer 14 on one or both upper and lower surfaces.
  • the alternating array electrode 12 is configured by providing an arrangement adjusting wire 15 that also extends in one direction between one conductive wire 121 that extends in one direction and the other wire 13 that extends in one direction. Yes. These one and other wires 12, 13 and the arrangement adjusting wire 15 are used as a horizontal wire, and the insulating wire 15 is used as a vertical wire. In addition, as shown in the drawing, the arrangement adjusting wire 15 may be not only one but also two or more between one conductive wire 121 and the other conductive wire 122.
  • the arrangement adjusting wire 15 extending in the vertical direction is arranged, and each of the wires 12 extending in the vertical direction is arranged.
  • 13 and 15 are cross-wired 16 extending in the horizontal direction and arranged in a lattice pattern with a plurality of wires arranged at intervals in the vertical direction.
  • the vertical and horizontal intervals of the lattice may be the same or substantially the same.
  • the one conductive wire 121 and the other conductive wire 122 are made of wire members having a circular cross section, an elliptical cross section, and a flat cross section, and may be monofilaments or multifilaments.
  • the filament may be a conductive wire made of metal or the like.
  • the metal may be plated on the outer periphery of the monofilament or multifilament, and the plating layer may be formed on the outer periphery of the filament.
  • the metal is preferably copper having a low resistivity, but may be other metals such as stainless steel.
  • the arrangement adjusting wire 15 and the crossing wire 16 are each made of a linear member having a circular cross section, an elliptical cross section, or a flat cross section, and may be monofilament or multifilament.
  • the crossing wire 16 is made of insulating fiber. It is preferable to use insulating fibers as the material of the wire 15 for adjusting the arrangement.
  • the material of the arrangement adjusting wire 15 and the crossing wire 16 is an organic solvent contained in the coating agent when the organic EL material is applied to one of the linear electrode group 12 and the other linear electrode group 13 and cured. May be dissolved.
  • the distance between the one conductive wire 121 and the arrangement adjusting wire 15 and the distance between the other conductive wire 122 and the arrangement adjusting conductive wire 15 are one conductive wire 121, the other conductive wire 122, and the arrangement adjusting conductivity.
  • the same order as the equivalent cross-sectional dimension of the wire 15 may be sufficient.
  • the conductive wires 121 and 13 and the arrangement adjusting wire 15 and the crossing wire 16 have a wire diameter of 20 to 35 ⁇ m, and a gap between the conductive wires 121 and 13 and the arrangement adjusting wire 15 is provided. Is 20 to 35 ⁇ m. The gap between the crossing wires 15 is 20 to 35 ⁇ m.
  • the thickness of the light emitting layer 13 is, for example, 40 to 80 ⁇ m.
  • the string-like thickness of each wire is approximately the same as the size of the mesh formed by these wires, or has the same order of dimensions. Accordingly, the gap between the wires is maintained by the wire 15 for adjusting the arrangement and the wire 16 for crossing.
  • the wire diameter of each wire is preferably uniform, but may be within a predetermined range with respect to the average diameter, for example, 80% to 120%. Thereby, the space
  • the arrangement adjusting wire 15 and the crossing wire 16 are provided to maintain a distance between one conductive wire 121 and the other conductive wire 122 until the organic EL material is cured. Therefore, when the organic EL material is cured by applying the organic EL material to the cloth knitted as described above to form the light emitting layer 13, the thickness of the light emitting layer 13 and the one conductive wire 121 and the other are increased. The conductive wire 122 is held. Note that the arrangement adjusting wire 15 and the crossing wire 16 do not need to be completely dissolved by the organic solvent, and may remain partially undissolved.
  • acrylic fibers or vinyl fibers can be used as the wires 15 for the arrangement adjustment and the crossing wires 16, and in this case, the coating agent contains an organic solvent such as toluene or acetic acid. It only has to be done.
  • the organic solvent can be appropriately selected according to the organic EL material, the curing agent, and the like.
  • the alternately arranged electrodes 12 are embedded in the light emitting layer 13, and at that time, the distance between the one conductive wire 121 and the other conductive wire 122 is substantially constant by the arrangement adjusting wire 15 and the crossing wire 16. Can be.
  • One end of one conductive wire 121 is mutually connected by one wiring part 5, and one end of the other conductive wire 122 is mutually connected by the other wiring part 6.
  • Each wiring unit 5, 6 is connected to the control unit 3 via the connection unit 4.
  • the control unit 3 applies a voltage between one wiring unit 5 and the other wiring unit 6. Thereby, a voltage can be applied to the organic EL molecules in the light emitting layer 13.
  • one conductive wire 121 extending in one direction and the other conductive wire 122 are arranged alternately in the light emitting layer 13.
  • “provided in the light emitting layer” means that each of the conductive wires 121 and the other conductive wires 122 in the alternate wiring electrode 14 is cut in a cross-section in a cross section and the surroundings are all organic EL molecules having a light emission image. It is not necessary to be in close contact, and includes cases where it is partially in close contact. That is, the voltage applied to one conductive wire 121 and the other conductive wire 122 may be applied to the organic EL molecules.
  • one conductive wire 121 and the other conductive wire 122 extending in the same direction are alternately arranged, and arrangement adjustment is performed as necessary between them.
  • the wire diameter of each wire is very small, the wire extending in the lateral direction may be referred to as weft and the wire extending in the vertical direction may be referred to as warp.
  • the light emitting unit 2 of the light emitting device 1 includes the alternately arranged electrodes 12 as described above, a voltage is applied between the one conductive wire 121 and the other conductive wire 122 to emit the light emitting layer 13.
  • the entire surface can emit light.
  • each of the wires 12, 13, 15 and the light emitting layer 13 extend in the vertical and horizontal directions, respectively, a thin film is used without using a glass substrate as in the prior art.
  • the ITO film since the ITO film is not formed on the sheet, the ITO film does not peel from the film or sheet.
  • the bending of the film or sheet itself is not hindered. Therefore, the light emitting unit 2 of the light emitting device 1 according to the second embodiment of the present invention can be freely deformed such as curved.
  • FIG. 7 is a diagram schematically showing a cross section of a light emitting unit in a light emitting device according to the third embodiment of the present invention
  • FIG. 8 is a diagram schematically showing alternating electrodes of the light emitting unit shown in FIG. .
  • the alternately arranged electrodes 12 in the light emitting unit 2 alternately arrange one conductive wire 121 and the other conductive wire 122, and arrange the arrangement adjusting wire 15 as one conductive wire. It differs in that it is not provided between 121 and the other conductive wire 122.
  • the arrangement adjusting wire 15 is provided between the one conductive wire 121 and the other conductive wire 122, and the solvent contained in the organic EL material, the curing agent, or the like is applied.
  • the light emitting section 2B may be manufactured by melting the arrangement adjusting wire 15. Or you may make it apply
  • FIG. 9 is a diagram schematically showing a cross-section of a light emitting unit in a light emitting device according to the fourth embodiment of the present invention.
  • the light emitting unit 2C of the light emitting device according to the fourth embodiment is different in that a color filter 18 is provided between the light emitting layer 13 and the protective layer 14 in the light emitting unit 2A shown in FIG. By providing the color filter 18, the contrast can be improved.
  • FIG. 10 is a diagram schematically showing a cross section of a light emitting unit in a light emitting device according to a fifth embodiment of the present invention.
  • a protective layer 14 is provided on one side of the light emitting layer 13 with a color filter 18 interposed therebetween.
  • a base material 11 is provided.
  • the conductive cloth is formed by providing a wire 15 for adjusting the arrangement between one conductive wire 121 and the other conductive wire 122, and making it cross-shaped with a crossing wire 15 in a direction perpendicular to them.
  • the alternating array electrode 12 is provided in the light emitting layer 13, and the alternating array electrode 12 is interposed between one conductive wire 121 and the other conductive wire 122.
  • An AC voltage having a frequency suitable for direct current or EL element emission is applied. Then, a voltage is applied to the organic EL molecules, and the light emitting layer 13 can emit light over the entire surface.
  • One conductive wire 121 and the other conductive wire 122 form the alternately arranged electrodes 12 which are provided in the light emitting layer 13.
  • the alternating array electrode 12 is provided with a wire 15 for adjusting the arrangement between the conductive wires 121 and 13 as necessary, and is knitted by the crossing wire 16 in a direction intersecting these, as if it is a fine yarn cloth. It is configured as.
  • a light emitting layer in which one or a plurality of organic EL materials are applied or immersed in these fine yarn cloths can be formed. In that case, a hardening
  • the formation of the light emitting layer in the second to fifth embodiments has not been described in detail, various known organic EL materials can be used.
  • a known technique such as an ink jet method can be used, or an immersion impregnation method or an infiltration method using a roller can be used.
  • each wire rod may be knitted to form a square mesh such as a square in plan view, but may be a mesh of other shapes such as a rhombus.
  • the light-emitting device can be used for billboard lighting such as advertisements and back lighting of liquid crystal display devices.
  • the photoelectric conversion device 1 includes a photoelectric conversion layer 13 having a p-type organic semiconductor 13A made of a hole transport material and an n-type organic semiconductor 13B made of an electron transport material, and a p-type electrode connected to the p-type organic semiconductor 13A.
  • the first conductive wire 121, the second conductive wire 122 as an n-type electrode connected to the n-type organic semiconductor 13B, and the protective layer 14 laminated so as to cover the surface of the photoelectric conversion layer 13 are provided.
  • the photoelectric conversion device 1 is disposed along the surface of the insulating substrate 11.
  • At least one of the first conductive wire 121 and the second conductive wire 122 is composed of a plurality of conductive wires 120 arranged side by side in substantially the same direction so as not to contact each other.
  • a horizontal wire 12B made of an insulating wire is arranged in a direction crossing these conductive wires 120.
  • a part of the plurality of conductive wires 120 is the first conductive wire 121 and the other conductive wire 120 is the second conductive wire 122, which are alternately arranged.
  • the plurality of conductive wire rods 120 constituting the first conductive wire rod 121 and the plurality of conductive wire rods 120 constituting the second conductive wire rod 122 are provided in substantially the same number, and bus bars 7 as wiring portions as shown in FIG. Can be connected to various circuits via the bus bar 7.
  • Each conductive wire 120 uses a flexible wire such as a metal wire such as a copper wire or a stainless steel wire, a synthetic fiber such as a resin, or a metal-plated fiber obtained by performing metal plating on the surface of various fibers such as a natural fiber. It is good to do.
  • the core fiber may be composed of a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, vinyl resin, or the like.
  • the thickness of the plurality of conductive wires 120 may be different from each other, but it is preferable to use wires having the same thickness. Although not particularly limited, as an example, one having a wire diameter of 20 to 30 ⁇ m may be used.
  • Each horizontal wire 12B is made of an insulating wire, and it is preferable to use a flexible wire such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin.
  • a wire having the same thickness as that of the conductive wire 120 may be used as the horizontal wire 12B.
  • the photoelectric conversion layer 13 includes a p-type organic semiconductor 13A connected to the first conductive wire 121 and an n-type organic semiconductor 13B connected to the second conductive wire 122.
  • the p-type organic semiconductor 13A and the n-type organic semiconductor 13B are bonded at the contact interface to form a pn junction. It is preferable that the photoelectric conversion layer 13 is rich in flexibility.
  • the p-type organic semiconductor 13A is made of a hole transport material.
  • the hole transport material include aromatic amine, thiophene, phenylene-vinylene, thienylene-vinylene, carbazole, vinylcarbazole, pyrrole, acetylene, phthalocyanine, acene, porphyrin, derivatives, complexes, oligomers, and polymers thereof.
  • known organic compounds having electron acceptability that can be used as organic semiconductors can be used.
  • the n-type organic semiconductor 13B is made of an electron transport material.
  • the electron transport material include silole, fullerene, carbon nanotube, perylene, naphthalene, pyridine, phthalocyanine, quinoline, oxadiazole, triazole, distyrylarylene, derivatives, complexes, oligomers, and polymers thereof. Any known organic compound having an electron donating property that can be used as an organic semiconductor can be used.
  • p-type organic semiconductor 13A and n-type organic semiconductor 13B can be selected by combining those having the highest possible photoelectric conversion efficiency.
  • the thickness of the photoelectric conversion layer 13 is not particularly limited, but may be 1.2 to 2.0 times the wire diameter of the conductive wire 120, for example.
  • the photoelectric conversion device 1 since the first conductive wire 121, the second conductive wire 122, and the photoelectric conversion layer 13 have flexibility, the photoelectric conversion device 1 has sufficient flexibility. Therefore, it can arrange
  • an electrode preparation process for preparing the electrode structure 12 a material-containing liquid adjustment process for preparing a material-containing liquid 130 containing a hole transport material or an electron transport material, a hole transport material or an electron transport material
  • the photoelectric conversion device 1 is manufactured by a manufacturing method including a material adhering step for adhering to the electrode structure 12 and a semiconductor forming step for forming an organic semiconductor.
  • an electrode structure 12 for preparing a photoelectric conversion device in which a plurality of conductive wires 120 are integrally connected together with the arrangement adjusting wire 15 is prepared.
  • This electrode structure 12 may be prepared in advance.
  • the electrode structure 12 of this embodiment includes a plurality of vertical wires 12A having the plurality of conductive wires 120 and the arrangement adjusting wires 15 as described above, and a plurality of horizontal wires 12B intersecting the vertical wires 12A. By crossing these, it is a net made of plain weave.
  • the conductive wire 120 and the arrangement adjusting wire 15 of the vertical wire 12A are alternately arranged in substantially the same direction.
  • the number of the conductive wires 120 and the number of the arrangement adjusting wires 15 that are alternately arranged may be repeated by arranging one or both of them in plurality, but here, each of them is repeatedly arranged one by one.
  • the number or the like of the arrangement adjusting wires 15 arranged between the conductive wires 120 is preferably set according to the arrangement interval of the first conductive wires 121 and the second conductive wires 122 obtained after manufacture. It is preferable that the interval between the adjacent vertical wire rods 12A and the interval between the conductive wire rods 120 are adjusted to a suitably set range.
  • the conductive wire 120 of the vertical wire 12A is as described above, but the hole transport material contained in the material-containing liquid 130 is attached to a part of the conductive wire 120 that becomes the first conductive wire 121 of the vertical wire 12A.
  • the material may be selected so as to be easy and surface treatment may be performed.
  • a material may be selected or a surface treatment may be performed on the other conductive wire 120 that becomes the second conductive wire 122 so that the electron transport material contained in the material-containing liquid 130 is easily attached. .
  • the surface material of the conductive wire 120 constituting the first conductive wire 121 and the surface material of the conductive wire 120 constituting the second conductive wire 122 in a combination that causes a potential difference such as tin and copper.
  • the p-type organic semiconductor 13A or the n-type organic semiconductor 13B may be controlled to be generated as crystals or molecules on the surface of each conductive wire 120.
  • the arrangement adjusting wire 15 of the vertical wire 12A is made of a material that can be dissolved by the material-containing liquid 130 described later, and can be dissolved by a solvent selected according to the hole transport material and the electron transport material.
  • the arrangement adjusting wire 15 may be an insulating resin wire. Although not particularly limited, for example, a wire such as an acrylic resin or a vinyl resin may be used. If the thickness of the arrangement adjusting wire 15 is excessively large, the solubility is lowered or the interval between the conductive wires 120 is widened. On the other hand, if the thickness is excessively thin, it is difficult to secure the interval between the conductive wires 120.
  • the thickness of the wire 15 may be 0.5 to 1.0 times the wire diameter of the conductive wire 120.
  • the horizontal wire 12B may be simply arranged in a direction intersecting with the conductive wire 120 and the arrangement adjusting wire 15, but here, the horizontal wire 12B is arranged so as to intersect with the conductive wire 120 and the arrangement adjusting wire 15 up and down at predetermined intervals. ing.
  • the horizontal wire 12B is made of an insulating wire different from the arrangement adjusting wire 15, and is dissolved in a material-containing liquid 130 described later, that is, a solvent used according to the hole transport material and the electron transport material used.
  • the material is made of a material that is lower than the arrangement adjusting wire 15.
  • a wire such as polyester such as PET may be used.
  • the conductive wire 120 By integrating the vertical wire 12A together with the horizontal wire 12B, the conductive wire 120 can be held apart with the arrangement adjusting wire 15 interposed between the conductive wires 120. And can be placed stably with a gap.
  • the material-containing liquid 130 is prepared by containing at least one of the hole transport material and the electron transport material as described above in the solvent.
  • the material-containing liquid 130 needs to be prepared according to the material adhesion process.
  • the material-containing liquid 130 is separately brought into contact with the first conductive wire 121 and the second conductive wire 122 to form the p-type organic semiconductor 13A and the n-type semiconductor.
  • the material containing liquid 130 containing a hole transport material and the material containing liquid 130 containing an electron transport material are prepared separately.
  • the material-containing liquid 130 is prepared by including both transport materials in a solvent.
  • the hole transport material may be a precursor of an organic compound having an electron acceptability that can be used as an organic semiconductor in addition to the above-described materials, and the electron transport material may be an organic semiconductor other than the above-described materials.
  • the precursor of the organic compound which has the electron-donating property which can be used as these may be sufficient.
  • a desired compound may be generated by appropriately reacting in the subsequent steps.
  • the solvent for producing a photoelectric conversion device used for the material-containing liquid 130 may be a solvent in which a hole transport material or an electron transport material is dispersed, but a soluble solvent is preferable, and a volatile solvent. There may be. This solvent needs to be able to dissolve the wire 15 for adjusting the arrangement of the electrode structure 12 and preferably not to dissolve the horizontal wire 12B.
  • a solvent usually used when forming an organic semiconductor using each hole transport material or each electron transport material is used. it can.
  • a solvent usually used when forming an organic semiconductor using each hole transport material or each electron transport material is used.
  • it can.
  • toluene, xylene, acetic acid or the like is used.
  • This material-containing liquid 130 may further contain components such as an additive such as dicarboxylic acid for controlling orientation and a binder such as methacrylic acid for maintaining strength.
  • the material-containing liquid 130 is brought into contact with the electrode structure 12 to dissolve the arrangement adjusting wire 15, and the hole transport material and the electron transport material in the material-containing liquid 130 are removed from the electrode structure 12. It adheres to the conductive wire 120.
  • each is sequentially brought into contact with part or all of the electrode structure 12 to dissolve both the transport materials.
  • the material-containing liquid 130 it may be contacted at once.
  • the method of bringing the material-containing liquid 130 into contact with the electrode structure 12 and attaching the hole transport material or the electron transport material to the conductive wire 120 is not particularly limited.
  • the material-containing liquid 130 may be applied to the electrode structure 12 or may be printed by an inkjet printer, or the electrode structure 12 may be immersed in the material-containing liquid 130 and dipped.
  • the material-containing liquid 130 containing both transport materials is brought into contact with one side of the electrode structure 12.
  • the electrode structure 12 is placed on the substrate 11 as shown in FIG. 13 (a), and the material-containing liquid 130 is brought into contact as shown in FIG. 13 (b).
  • the arrangement adjusting wire 15 is dissolved by the solvent in the material-containing liquid 130.
  • the dissolved components of the arrangement adjusting wire 15 may be dispersed and left in the material-containing liquid 130 or may be replaced by the material-containing liquid 130 and removed.
  • the components of the arrangement adjusting wire 15 are dissolved in the material and arranged in this material.
  • the material-containing liquid 130 is disposed in the portion where the arrangement adjusting wire 15 has been disposed, and the hole transport material and the electron transport material of the material-containing liquid 130 are equivalent to other portions between and in the vicinity of the conductive wire 120. Be placed. Then, the hole transport material and the electron transport material adhere to the conductive wire 120 of the first conductive wire 121 and the conductive wire 120 of the second conductive wire 122, respectively.
  • a p-type organic semiconductor 13A is formed from a hole transport material or an electron transport material adhered to each conductive wire 120 of the electrode structure 12 together with the material-containing liquid 130.
  • the n-type organic semiconductor 13 ⁇ / b> B is formed in a state where it is connected to the other part of the conductive wire 120.
  • the solvent in the material-containing liquid 130 may be volatilized and dried, and after drying, heat treatment, annealing treatment, or the like may be performed. .
  • Such processing can be performed at a relatively low temperature.
  • a precursor is used as a hole transport material or an electron transport material
  • the precursor is converted into a hole transport material or an electron transport material by a treatment after drying, and the organic semiconductor 13A is connected to the conductive wire 120 while being connected to the conductive wire 120.
  • 13B can be formed. Even when the hole transport material or the electron transport material itself is used, it is possible to improve the photoelectric conversion performance of the obtained photoelectric conversion device 1 by performing a heat treatment or an annealing treatment after drying. is there.
  • the protective layer 14 is laminated on the entire surface of the photoelectric conversion layer 13.
  • a material such as a transparent resin that can transmit light received and emitted by the photoelectric conversion layer 13 can be used. Thereby, manufacture of the photoelectric conversion device 1 is completed.
  • the effect in the manufacturing method of the above-mentioned photoelectric conversion device 1 is demonstrated.
  • the electrode structure 12 integrates the plurality of conductive wires 120 together with the arrangement adjusting wire 15, even the flexible conductive wire 120 can be easily arranged.
  • the arrangement, shape, density, etc. of each conductive wire 120 can be adjusted to easily adjust the arrangement interval of the conductive wire 120, and the state Can be easily and stably maintained during production.
  • the electrode structures 12 are formed by accurately separating the conductive wires 120 from each other at a predetermined interval, so that each conductive wire 120 is stabilized at a desired interval. Can be arranged. Therefore, it is possible to prevent variation in the arrangement interval of the plurality of conductive wires 120 and ensure the performance of photoelectric conversion.
  • the arrangement adjusting wire 15 is dissolved by bringing the material containing liquid 130 into contact with the electrode structure 12, the hole transport material or the electron transport of the material containing liquid 130 is disposed at the portion where the arrangement adjusting wire 15 is arranged. Material can be placed. Therefore, more organic semiconductors 13A and 13B can be disposed uniformly between the conductive wires 120, and the performance of photoelectric conversion can be ensured. Therefore, it is possible to easily manufacture the photoelectric conversion device 1 having flexibility while ensuring the performance of photoelectric conversion.
  • An electrode structure 12 made of a net comprising a plurality of vertical wires 12A made up of a plurality of conductive wires 120 and arrangement adjusting wires 15 and a plurality of horizontal wires 12B arranged crossing the plurality of vertical wires 12A is prepared. Since the material-containing liquid 130 was prepared using a solvent capable of dissolving the arrangement adjusting wire 15 and not dissolving the horizontal wire 12B, the horizontal wire 12B is left on the photoelectric conversion layer 13 after the arrangement adjusting wire 15 is dissolved. Even if it is deformed during use, the photoelectric conversion layer 13 is not easily damaged, the durability of the photoelectric conversion device 1 can be improved, and the interval between the conductive wire members 120 can be maintained.
  • a material-containing liquid 130 containing a hole transport material and an electron transport material is prepared, and the p-type organic semiconductor 13A is formed in a state of being connected to a part of the conductive wire 120 using the material-containing liquid 130. Since the organic semiconductor 13B is formed in a state where it is connected to the other conductive wire 120, the p-type organic semiconductor 13A and the n-type organic semiconductor 13B can be formed at the same time, which is easier to manufacture.
  • the photoelectric conversion layer 13 having the organic semiconductors 13A and 13B is formed by adhering the material-containing liquid 130 to one side of the electrode structure 12, in the obtained photoelectric conversion device 1, the first conductive wire 121 and the second conductive wire are formed. 122 is arrange
  • this 6th Embodiment can be suitably changed within the scope of the present invention.
  • the example in which the material-containing liquid 130 is attached to one surface side of the electrode structure 12 has been described.
  • the first conductive wire 121 and the second conductive wire 122 may be embedded in the photoelectric conversion layer 13, or the protective layer 14 may be provided on both sides of the photoelectric conversion layer 13.
  • both surfaces can be used as light receiving and emitting surfaces.
  • the horizontal wire 12B is arranged as the electrode structure 12 has been described.
  • the horizontal wire 12B can be arranged in a predetermined position.
  • the wire 12B may not be used.
  • one electrode structure 12 is embedded in one photoelectric conversion layer 13, but a plurality of electrode structures 12 may be embedded in the same photoelectric conversion layer 13, A plurality of photoelectric conversion layers 13 may be stacked, and one or a plurality of electrode structures 12 may be embedded in each.
  • the example in which the horizontal wire 12B and the support wire 320 cannot be dissolved is described as the solvent.
  • the present invention may be used even if a solvent capable of dissolving the horizontal wire 12B and the support wire 320 is used. It is possible to apply In the said 6th Embodiment, although the example which melt
  • Photoelectric conversion device 11 Base material 12: Electrode 12A for photoelectric conversion device: Vertical wire 12B: Horizontal wire 121: First conductive wire 122: Second conductive wire 123: First insulating wire 13A: Organic semiconductor of p layer 13B: n-layer organic semiconductor 14: protective layer 19
  • Photoelectric conversion device 12 Electrode structure 121: p-type electrode 122: n-type electrode 12A: vertical wire 12B: horizontal wire 120: conductive wire 7: bus bar 15: arrangement adjusting wire 13: photoelectric conversion layer 13A: p-type Organic semiconductor 13B: n-type organic semiconductor 130: material-containing liquid 14: protective layer 11: base material 20: photoelectric conversion device 22: electrode structure 230: electrode part 320: support wire

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention a trait à un dispositif de conversion photoélectrique qui comprend : une couche de conversion photoélectrique (13) permettant d'effectuer une conversion entre la lumière et l'énergie électrique ; et une pluralité de premiers éléments de fil électrique conducteur (121) et une pluralité de seconds éléments de fil électrique conducteur (122) qui sont prévus sur un côté à une surface de la couche de conversion photoélectrique (13). Les premiers éléments de fil électrique conducteur et les seconds éléments de fil électrique conducteur sont disposés en alternance. Un semi-conducteur organique de couche P (13A) comprenant un matériau de transport de trous est prévu sur chacun des premiers éléments de fil électrique conducteur (121). Un semi-conducteur organique de couche N (13B) comprenant un matériau de transport d'électrons est prévu sur chacun des seconds éléments de fil électrique conducteur (122). Les premiers éléments de fil électrique conducteur tiennent lieu d'électrodes de type P et les seconds éléments de fil électrique conducteur tiennent lieu d'électrodes de type N.
PCT/JP2012/072999 2011-09-14 2012-09-09 Procédé permettant de fabriquer un dispositif de conversion photoélectrique, électrode destinée à un dispositif de conversion photoélectrique, dispositif de conversion photoélectrique et dispositif électroluminescent WO2013039020A1 (fr)

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JPPCT/JP2011/071049 2011-09-14
JPPCT/JP2011/071051 2011-09-14
PCT/JP2011/071049 WO2013038535A1 (fr) 2011-09-14 2011-09-14 Dispositif de conversion photoélectrique
PCT/JP2011/071051 WO2013038537A1 (fr) 2011-09-14 2011-09-14 Électrode pour dispositifs de conversion photoélectrique, et dispositif de conversion photoélectrique utilisant ladite électrode
JP2012097189 2012-04-20
JP2012-097189 2012-04-20
JP2012-097190 2012-04-20
JP2012097190 2012-04-20

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200083298A1 (en) * 2018-09-12 2020-03-12 Kabushiki Kaisha Toshiba Radiation detector

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172778A (en) * 1981-09-02 1982-10-23 Sharp Corp Solar battery
JPH06151915A (ja) * 1992-11-05 1994-05-31 Canon Inc 光発電素子、その製造方法及びそれに供される製造装置
JP2004103939A (ja) * 2002-09-11 2004-04-02 Japan Science & Technology Corp 直立型超格子、デバイス及び直立型超格子の製造方法。
JP2005011841A (ja) * 2003-06-16 2005-01-13 Japan Science & Technology Agency 垂直接合型有機光起電力装置及びその製造方法
JP2005533349A (ja) * 2002-07-17 2005-11-04 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ ２次元のアレイを有するエレクトロルミネセント装置
JP2006165149A (ja) * 2004-12-06 2006-06-22 Canon Inc 光起電力素子、光起電力素子集合体、光起電力素子モジュール、及び、それらの製造方法
JP2007052953A (ja) * 2005-08-16 2007-03-01 Sony Corp 表示素子およびその製造方法、ならびに表示素子用の電極材、
JP2008135657A (ja) * 2006-11-29 2008-06-12 Konica Minolta Holdings Inc 光電変換素子、その製造方法、及び放射線画像検出器
JP2008311121A (ja) * 2007-06-15 2008-12-25 Fujikura Ltd 光電変換素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49120593A (fr) * 1973-03-16 1974-11-18
JP3767057B2 (ja) * 1996-12-28 2006-04-19 カシオ計算機株式会社 電界発光素子

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172778A (en) * 1981-09-02 1982-10-23 Sharp Corp Solar battery
JPH06151915A (ja) * 1992-11-05 1994-05-31 Canon Inc 光発電素子、その製造方法及びそれに供される製造装置
JP2005533349A (ja) * 2002-07-17 2005-11-04 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ ２次元のアレイを有するエレクトロルミネセント装置
JP2004103939A (ja) * 2002-09-11 2004-04-02 Japan Science & Technology Corp 直立型超格子、デバイス及び直立型超格子の製造方法。
JP2005011841A (ja) * 2003-06-16 2005-01-13 Japan Science & Technology Agency 垂直接合型有機光起電力装置及びその製造方法
JP2006165149A (ja) * 2004-12-06 2006-06-22 Canon Inc 光起電力素子、光起電力素子集合体、光起電力素子モジュール、及び、それらの製造方法
JP2007052953A (ja) * 2005-08-16 2007-03-01 Sony Corp 表示素子およびその製造方法、ならびに表示素子用の電極材、
JP2008135657A (ja) * 2006-11-29 2008-06-12 Konica Minolta Holdings Inc 光電変換素子、その製造方法、及び放射線画像検出器
JP2008311121A (ja) * 2007-06-15 2008-12-25 Fujikura Ltd 光電変換素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200083298A1 (en) * 2018-09-12 2020-03-12 Kabushiki Kaisha Toshiba Radiation detector

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