WO2013023492A1

WO2013023492A1 - Ito crossover capacitive touch screen and manufacturing method

Info

Publication number: WO2013023492A1
Application number: PCT/CN2012/077362
Authority: WO
Inventors: 曹晓星; 李晗
Original assignee: 深圳市宝明科技股份有限公司
Priority date: 2011-08-16
Filing date: 2012-06-21
Publication date: 2013-02-21
Also published as: CN102236492B; CN102236492A

Abstract

Disclosed are an ITO crossover capacitive touch screen and a manufacturing method therefor. The ITO crossover capacitive touch screen comprises a decorative glass substrate, a capacitive functional substrate stacked on the decorative glass substrate via an optical glue, and, sequentially stacked on the capacitive functional substrate, an ITO crossover electrode, a first insulation layer, an ITO electrode, a metal electrode, and a second insulation layer. The ITO electrode comprises a capacitive screen driver and a sensing electrode, and is provided with a patterned graphic structure. The capacitive screen driver and the sensing electrode are on a same layer, and are mutually independent, mutually insulated, and vertical in design. The present invention uses for the capacitive touch screen the stacked structure and an ITO crossover scheme to perform a logical design, thus allowing for the capacitive touch screen effectively improved transmittance, operational stability, and sensitivity to touch.

Description

ITO bridge capacitance touch screen and manufacturing method thereof

The present invention relates to the field of capacitive touch screen technology, and more particularly to a capacitive touch screen designed by ITO bridge and a method of manufacturing the same. Background technique

With the development of electronic technology, currently mobile phones, digital cameras, handheld game consoles, car DVDs, say 1

Keyboards or mice such as MP3s, instrumentation, etc. are gradually being replaced by touch screens. The products of touch screens were not very hot a few years ago, and as people's books on touch screen products are more and more contacted, they have been recognized by more people in the past two years, and the speed of development has gradually accelerated. The rapid growth of the touch screen has not only stimulated more intense industry competition, but also indirectly promoted the development of technology. Its multi-touch operation method has increased the influence of touch screen products to a new height, and has gradually been adopted by people. Concerned.

The touch screen is mainly composed of a touch detecting component and a touch screen controller. The touch detecting component is installed in front of the display screen for detecting the touch position of the user, and is sent to the touch screen controller after receiving; and the main function of the touch screen controller is to receive from the touch point detecting device. Touch the information, convert it to the contact coordinates, and send it to the CPU. It can also receive commands from the CPU and execute them.

According to the working principle of the touch screen and the medium for transmitting information, the touch screen can be divided into four types: resistive type, capacitive sensing type, infrared type and surface acoustic wave type. Currently, a resistive touch screen is widely used, which uses pressure sensing. Resistively controlled; Resistive touch screen is a multi-layer composite film, the main part of which is a resistive film screen that closely matches the surface of the display. The resistive film screen is a layer of glass or hard plastic flat plate, and the surface is coated with a transparent oxidized metal (transparent conductive resistor) ITO (Indium Tin Oxide) conductive layer, which is covered with a layer of external surface hardening and smooth anti-scratch. The plastic layer, whose inner surface is also coated with an ITO coating, has a number of small (less than 1/1000 inch) transparent isolation points between them to insulate the two conductive layers, when the finger touches the screen, two The layer conductive layer has contact at the touch point position, the resistance changes, and a signal is generated in both X and Y directions, and then sent to the touch screen controller, and the controller detects the contact and calculates (X, Y) Position, then operate according to the way the mouse is simulated. The basic principle of the capacitive touch screen is to use the current sensing of the human body. The capacitive touch screen is a two-layer composite glass screen. The inner surface of the glass screen is coated with a bismuth (indium tin oxide) conductive film (coated conductive glass). The outer layer is a thin layer of bauxite glass protective layer, the ιτο coating is used as the working surface, and four electrodes are led out at the four corners. When the finger touches the screen, the user and the touch screen surface form a coupling capacitor due to the human body electric field. In the case of high-frequency current, the capacitor is a direct conductor, so the finger sucks a small current from the contact point, which flows out from the electrodes on the four corners of the touch screen, and the current flowing through the four electrodes and the fingers to the four corners In proportion to the distance, the controller calculates the position of the touch point by accurately calculating the ratio of the four currents.

In the capacitive touch screen, the projected capacitive touch screen is a widely used one, which has the characteristics of simple structure and high light transmittance. A touch sensing component of a projected capacitive touch screen typically has a plurality of row and column electrodes staggered to form an inductive matrix. The commonly used design method includes disposing the row electrode and the column electrode on both sides of the same transparent substrate to prevent short circuit at the staggered position; or disposing the row electrode and the column electrode on the same side of the same transparent substrate to form the same conductive film ( Generally, it is an ITO conductive film), and the row electrode and the column electrode are separated by providing an insulating layer at a position where the row electrode and the column electrode are staggered, and the row electrode and the column electrode are separated to ensure conduction in respective directions, which is effective. Prevent it from shorting in the staggered position.

A commonly adopted design is: one of the row electrodes or the column electrodes is continuously disposed on the conductive film, and the other electrode is disposed on the conductive film at intervals of electrodes arranged in a plurality of electrode blocks, and the conductive bridge is disposed at the position of the staggered point. The adjacent electrode blocks are electrically connected to form a continuous electrode in the other direction; the conductive bridge is separated from the continuously disposed electrodes by an insulating layer, thereby effectively preventing the row electrode and the column electrode from being short-circuited at the staggered point. The commonly adopted design scheme is as follows: (1) The laminated structure is a transparent substrate, a first direction electrode, an insulating layer, and a conductive bridge; or (2) the laminated structure is a transparent substrate, a conductive bridge, an insulating layer, and a first direction electrode.

However, the capacitive touch screen adopting the traditional design scheme may have the defects of low light transmittance and poor working stability. The transmittance of the capacitive touch screen of the conventional design scheme is difficult to break through 80%, and the whole force is bent and deformed easily. Separation occurs at the interface, causing the electrode to open the touch to fail and the touch sensing component to be damaged. Summary of the invention One of the objectives of the present invention is to provide an ιτο bridge capacitive touch screen, which can effectively improve the transmittance, working stability and touch sensitivity of the capacitive touch screen by rationally designing the laminated structure of the capacitive touch screen and the ιτο bridge mode. .

To achieve the above object, the present invention adopts the following technical solutions:

An ITO bridge capacitive touch screen comprises a decorative glass substrate (cover glass), a capacitor functional substrate laminated on the decorative glass substrate by optical glue, and a ΠΌ bridge electrode, a first insulating layer, which are sequentially stacked on the capacitor functional substrate, The ITO electrode, the metal electrode and the second insulating layer; the ITO electrode comprises a capacitive screen driving and sensing electrode, and has a regular pattern structure; the capacitive screen driving and the sensing electrode are on the same level, independent of each other, insulated from each other, and vertically designed.

The capacitive functional glass substrate is made of borosilicate or soda lime glass.

Preferably, the capacitor-functional substrate has a thickness of 0.33 to 0.7 mm of a chemically strengthened glass substrate; the decorative glass substrate has a thickness of 0.5 to 2.0 mm; the ITO electrode has a regular structure of a diamond shape, or Strip, or square, or snowflake, or cross.

ITO bridge electrode thickness is 50 angstroms to 2000 angstroms (face resistance is 10~430 ohms); the thickness of the first insulating layer is 0.5~3um; the thickness of ITO electrode layer is 50~2000 angstroms (the surface resistance is 10~) 430 ohms); the thickness of the metal electrode layer is 500 to 4000 angstroms; the thickness of the second insulating layer is 0.5 to 3 um.

The metal film layer of the metal coating is a sandwich structure formed by stacking MoNb, AlNd, and MoNb, and the thickness of the three coatings is 50 angstroms to 500 angstroms: 500 angstroms to 3,000 angstroms: 50 angstroms to 500 angstroms. In combination, the mass ratio of Mo and Nb in MoNb alloy material is 85~95: 5-15, and the mass ratio of A1 and Nd in AlNd alloy material is 95~98: 2~5.

The ITO comprises In203 and Sn02, and the mass ratio thereof is 85~95: 5~15.

The ITO bridge electrode, which drives the driving line or the sensing line of the ITO electrode, has a regular pattern structure. The first insulating layer keeps the ITO electrode 1 and the ITO electrode 2 in an insulated state and does not conduct each other. The flexible circuit board bonding region where the ITO electrode signal is turned on is realized by the metal electrode. The second insulating layer protects the metal electrode from the ITO wire to insulate it from the air.

A second object of the present invention is to provide a method for manufacturing an ITO bridge capacitive touch screen, which adopts the following technical solutions:

Formation of ITO bridge electrode: Chemical strengthening of the capacitor functional substrate, through ITO coating, to form a transparent and uniform thickness on the capacitive functional substrate (functional sheet, which is conductive glass). a film layer having a thickness of 50 angstroms to 2000 angstroms (face resistance of 10 to 430 ohms);

After transparent coating of ITO coating, a uniform thickness of positive photoresist material is coated on the surface of the ITO, and the thickness of the photoresist coating is lum~5um;

After photoresist pre-baking, exposure, development, etching, and photoresist removal, a thickness of 50 to 2000 angstroms (face resistance of 10 to 430 ohms) and regular ITO patterns or electrodes are formed.

Formation of the first insulating layer:

After passing through the transparent substrate of the ITO bridge electrode, a thin layer of negative photoresist material is coated on the surface of the ITO film, and the thickness of the photoresist coating is 0.5 um~3 um;

After pre-baking, exposure, and development, the photoresist is finally formed to a thickness of 0.5 to 3 um and a regular pattern of insulation (such as a rectangle, a square, a diamond, an ellipse, etc.).

Formation of ITO electrode layer:

The transparent substrate forming the first insulating layer is again subjected to ITO coating to form a transparent and uniform thickness ITO film layer on the glass substrate, and the thickness thereof is 50 angstroms to 2000 angstroms (the surface resistance is 10 430 ohms) ;

After photoresist pre-baking, exposure, development, etching, and photoresist removal, the final thickness is 50~2000 angstroms (face resistance is 10~430 ohms) and regular ITO pattern or electrode;

The ITO electrode comprises a capacitive screen drive (ITO electrode 1) and a sensing electrode (ITO electrode 2) having a regular pattern structure; the ITO electrode 1 and the ITO electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed.

Formation of the metal electrode layer:

The transparent substrate on which the ITO electrode layer is formed is subjected to metal plating to form a metal film layer having a uniform thickness on the transparent substrate, and has a thickness of 500 angstroms to 4,000 angstroms.

The metal-coated transparent substrate is coated on the metal surface with a uniform thickness of the positive photoresist material, and the photoresist coating thickness is lum~5um;

The photoresist is pre-baked, exposed, developed, etched, and the photoresist is removed to form a regular metal pattern or electrode with a thickness of 500 to 4000 angstroms.

Formation of the second insulating layer: After passing through the transparent substrate of the metal electrode, a thin layer of negative photoresist material is coated on the surface of the metal film, and the thickness of the photoresist coating is 0.5 um~3 um;

After photoresist pre-bake, exposure, and development, a thickness of 0.5~3um and a regular insulation pattern are finally formed.

Preferably, the capacitor functional substrate is a chemically strengthened glass substrate having a thickness of 0.33 to 0.7 mm; the ITO is composed of In203 and Sn02, and the mass ratio thereof is 85 to 95: 5 to 15. The ITO coating method can be vacuum magnetron sputtering, chemical vapor deposition, thermal evaporation, or sol gel.

The main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and positive photosensitive agent (trade name is TR400 produced by Taiwan New Materials Co., Ltd.); the main component of negative photoresist material is acetic acid Propylene glycol monomethyl ether ester, acrylic resin, epoxy resin and negative photosensitive agent (trade name: Taiwan Daxing Co., Ltd. POC A46) Coating photoresist materials are roller coating, spin coating, scraping and other methods.

The metallized metal film layer is a sandwich structure of MoNb, AlNd, MoNb, and the thickness is 50 angstroms to 500 angstroms: 500 angstroms to 3,000 angstroms: 50 angstroms to 500 angstroms, of which MoNb alloy The mass ratio of Mo and Nb in the material is 85~95: 5-15. The mass ratio of A1 and Nd in AlNd alloy material is 95~98: 2-5 The selection of metal materials can also be composed of silver alloy or copper alloy. Combined. The metal film coating is vacuum magnetron sputtering.

Compared with the prior art, the present invention has the following advantages and beneficial effects:

The invention optimizes the order and pattern of the laminated ITO bridge electrode layer by rationally setting the laminated structure, thereby greatly improving the yield of the product, reducing the cost, and improving the reliability of the product. Through reasonable design of each layer, the transmittance can reach more than 90%. DRAWINGS

1 is a schematic structural view of an ITO bridge capacitive touch screen according to the present invention;

2 is a schematic view showing a partial enlarged structure of an ITO bridge;

Figure 3 is a schematic cross-sectional view of the ITO bridge. detailed description

The present invention will be further described in detail below in conjunction with specific embodiments.

As shown in FIG. 1 , the ITO bridge capacitive touch screen includes a decorative glass substrate 11 and passes light. The capacitor layer 12 is laminated on the capacitor substrate 13 on the decorative substrate, and the ITO bridge electrode 14, the first insulating layer 15, the ITO electrode 16, the metal electrode 17, and the second insulating layer 18 are sequentially laminated on the capacitor function substrate; The ITO electrode 16 includes a capacitive screen drive 32 and a sensing electrode 33 having a regular pattern structure; the capacitive screen drive is on the same level as the sensing electrodes, independent of each other, insulated from each other, and vertically designed. The capacitor-functional substrate has a thickness of 0.33 to 0.7 mm of a chemically strengthened glass substrate; and the decorative glass substrate has a thickness of 0.5 to 2.0 mm of a chemically strengthened glass substrate.

FIG. 2 and FIG. 3 are schematic diagrams showing a partial structure or a cross-sectional structure of an ITO bridge capacitive touch screen according to the embodiment: a ITO bridge electrode 36 is connected to a driving line (ITO electrode 1) 32 or an induction line of the ITO electrode ( The crucible electrode 2) 33 has a regular pattern structure and may be a diamond shape, a strip shape, a square shape, a snowflake shape, or a cross shape. The first insulating layer 35 causes the capacitive screen drive (ΙΤΟ electrode 1) 32 and the sensing electrode (ΙΤΟ electrode 2) 33 to be in an insulated state and not electrically connected to each other. The flexible circuit board area where the ΙΤΟ electrode signal is turned on is realized by the metal electrode. The second insulating layer 34 protects the metal electrode and the tantalum wire from being insulated from the air.

The preparation process is as follows:

The formation of the bridge electrode:

The capacitor functional substrate is chemically strengthened, and a ruthenium plating film is formed to form a transparent and uniform thickness ruthenium layer on the capacitor functional substrate 31 (functional sheet, which is a conductive glass), and has a thickness of 50 angstroms to 2000 angstroms ( The surface resistance is 10~430 ohms); the bismuth material is composed of Ιη203 and Sn02, and its mass ratio is 85~95: 5~15. ITO coating methods include vacuum magnetron sputtering, chemical vapor deposition, thermal evaporation, and sol gel.

The ITO coated transparent glass substrate is coated with a uniform thickness of positive photoresist material on the surface of the ITO, and the photoresist coating thickness is lum~5um _{; the} main component of the positive photoresist material is propylene glycol monomethyl ether acetate. , epoxy resin and positive light agent. The photoresist coating thickness is lum~5um. Coating photoresist materials are by roller coating, spin coating, and scraping.

After the above process, the product is pre-baked, exposed, developed, etched, and stripped with a photoresist to form a thickness of 50 to 2000 angstroms (face resistance of 10 to 430 ohms) and a regular ITO pattern or electrode. The pre-baking temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 m to 500 mj, the developing solution is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees. The ITO etching solution is a mixture of hydrochloric acid and nitric acid in a certain ratio, so that the pH of the acid falls. Between 1 and 3, the etching temperature is between 40 and 50 degrees. The light-removing film solution is prepared by mixing dimethyl sulfoxide and ethanolamine in a certain ratio, the percentage is 70%: 30%, and the film removal temperature is between 40 and 80 degrees.

Formation of the first insulating layer:

The transparent glass substrate after passing through the ITO bridge electrode is coated with a uniform thickness of the negative photoresist material on the surface of the ITO film. The main component of the negative photoresist material is propylene glycol monomethyl ether acetate, acrylic resin, epoxy. Resin and negative photosensitive agent, the thickness of photoresist coating is 0.5um~3um _{; the} method of coating photoresist is spin coating, scraping and so on.

After the above process, the product is pre-baked, exposed, developed, and finally formed into a thickness of 0.5~3um and a regular insulating layer pattern. The pre-bake temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 to 100 mj, the developer is Na or Ka alkaline solution, and the development temperature is 20 to 40 degrees. After hard baking through the insulating layer, the condition is 200 to 300 degrees, and the time is from half an hour to 3 hours. After the above process, a first insulating layer having a thickness of 0.5 um to 3 um and a regular pattern is finally formed.

Formation of ITO electrode layer:

The transparent glass substrate forming the first insulating layer is again subjected to ITO coating to form a transparent and uniform thickness ITO film layer on the glass substrate, the thickness of which is 50 angstroms to 2000 angstroms; the ITO material is composed of In203 and Sn02 The mass ratio is 85~95: 5~15. ITO coating methods include vacuum magnetron sputtering, chemical vapor deposition, thermal evaporation, and sol gel.

The ITO coated glass substrate is coated with a uniform thickness of positive photoresist material on the surface of the ITO. The main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and photosensitive material; The thickness of the cloth is lum~5um. Coating photoresist materials are by roller coating, spin coating, and scraping.

After the above process, the product is pre-baked, exposed, developed, etched, and stripped to a thickness of 50 to 2000 angstroms and a regular ITO pattern or electrode. The pre-baking temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 m to 500 mj, the developer is Na or Ka-based alkaline solution, and the development temperature is operated at a constant temperature of 20 to 40 degrees. The ITO etching solution is a mixture of hydrochloric acid and nitric acid in a certain ratio, so that the pH of the acid falls between 1 and 3, and the etching temperature is between 40 and 50 degrees. The light-removing film solution is prepared by mixing dimethyl sulfoxide and ethanolamine in a certain ratio, the percentage is 70%: 30%, and the film removal temperature is between 40 and 80 degrees. The ITO electrode comprises a capacitive screen drive (ΙΤΟ electrode 1) and a sensing electrode (ΙΤΟ electrode 2) having a regular pattern structure; the ΙΤΟ electrode 1 and the ΙΤΟ electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed.

Formation of the metal electrode layer:

The glass substrate on which the ruthenium electrode layer is formed is subjected to metal plating to form a metal film layer having a uniform thickness on the glass substrate, and has a thickness of 500 angstroms to 4,000 angstroms. The metal film layer material is a sandwich structure composed of MoNb, AlNd, MoNb, and the thickness is matched in a certain proportion. The mass ratio of Mo and Nb in the MoNb alloy material is 90:10, and the mass ratio of A1 and Nd in the AlNd alloy material is 97: 3. The selection of the metal material can also be composed of a silver alloy or a copper alloy, and the components are combined in a certain ratio. The metal coating is vacuum magnetron sputtering.

A metallized glass substrate is coated with a uniform thickness of a positive photoresist material on its metal surface. The main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and positive photosensitive agent; The thickness of the resist coating is lum~5um. Coating photoresist materials are by roller coating, spin coating, and scraping. After the above process, the product is pre-baked, exposed, developed, etched, and stripped to a thickness of 500-4000 angstroms and a regular metal pattern or electrode. Pre-bake temperature and time range: 60 degrees to 150 degrees, 50 seconds to 200 seconds, exposure energy is 100m to 500mj, developer is Na or Ka alkaline solution, and the development temperature is 20 to 40 degrees. The metal etching solution is a mixture of phosphoric acid, acetic acid and nitric acid in a certain ratio, and the etching temperature is between 40 and 50 degrees. The light-removing film solution is prepared by mixing dimethyl sulfoxide and ethanolamine in a certain ratio, the percentage is 70%: 30%, and the film removal temperature is between 40 and 80 degrees.

Formation of the second insulating layer:

The glass substrate after the metal electrode is coated with a uniform thickness of the negative photoresist material on the surface of the metal film. The main component of the negative photoresist material is propylene glycol monomethyl ether acetate, acrylic resin, epoxy resin and negative Sexy light agent; photoresist coating thickness is 0.5um~3um. The method of coating the photoresist material is spin coating, scraping, and the like.

After the above process, the product is pre-baked, exposed, and developed by photoresist, and finally forms a pattern of a thickness of 0.5 to 3 um and a regular insulating layer. The pre-bake temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 m to 500 mj, the developer is Na or Ka-based alkaline solution, and the development temperature is operated at a constant temperature of 20 to 40 degrees. Hard baked through the insulation, the condition is 200 degrees to 300 degrees, time For 0.5 hours to 3 hours, after the above process, a second insulating layer having a thickness of 0.5 um to 3 um and having a regular pattern is finally formed.

The above is a further detailed description of the present invention in connection with the specific preferred embodiments. It is not intended that the specific embodiments of the invention are limited to the description. It will be apparent to those skilled in the art that the present invention may be practiced without departing from the spirit and scope of the invention.

Claims

Claim

1 . An ITO bridge capacitive touch screen, wherein the IT0 bridge capacitive touch screen comprises a decorative glass substrate, a capacitor functional substrate laminated on the decorative glass substrate by optical glue, and an ITO bridge electrode laminated on the capacitor function substrate in sequence, An insulating layer, an ITO electrode, a metal electrode and a second insulating layer; the ITO electrode comprises a capacitive screen driving and sensing electrode, having a regular pattern structure; the capacitive screen driving and the sensing electrode are on the same level, independent of each other, insulated from each other, vertical design.

2. The ITO bridge capacitive touch panel according to claim 1, wherein: the capacitor-functional substrate has a thickness of 0.33 to 0.7 mm of a chemically strengthened glass substrate; and the decorative glass substrate has a thickness of 0.5 to 2.0 mm. The chemically strengthened glass substrate; the regular structure of the ITO electrode is a diamond shape, or a strip shape, or a square shape, or a snowflake type, or a cross type.

3. The ITO bridge capacitive touch screen of claim 2, wherein: the ITO bridge electrode has a thickness of 50 angstroms to 2000 angstroms; and the thickness of the first insulating layer is

0.5~3um _; ITO electrode layer thickness is 50~2000 angstrom; metal electrode layer thickness is 500~4000 angstrom; second insulating layer thickness is 0.5~3 um.

4. The ITO bridge capacitive touch panel according to claim 3, wherein: the metal film layer of the metal plating film is a sandwich structure in which MoNb, AlNd, and MoNb are stacked, and the thickness of the three layers is 50 angstroms to 500 Å. Amy: 500 angstroms to 3000 angstroms: 50 angstroms to 500 angstroms, in which the mass ratio of Mo and Nb in MoNb alloy material is 85-95: 5-15, the mass ratio of A1 and Nd in AlNd alloy material is 95~98: 2-5 ₀

5. The ITO bridge capacitive touch panel of claim 4, wherein: ITO comprises In203 and Sn02, and the mass ratio is 85~95: 5~15.

6. A method of preparing an ITO bridge capacitive touch screen, comprising the steps of:

The formation of the ITO bridge electrode: the capacitive functional substrate glass is chemically strengthened, and then subjected to ITO coating to form a transparent and thick ITO film layer on the capacitor functional substrate, the thickness of which is 50 angstroms to 2000 angstroms;

The ITO coated transparent substrate is coated with a uniform thickness of a positive photoresist material on the surface of the ITO, and the photoresist coating thickness is lum~5um; Pre-baked, exposed, developed, etched, and stripped with photoresist, resulting in a thickness of

50-2000 angstroms and regular ITO patterns or electrodes;

The ITO bridge electrode includes a bridge electrode 1 and a black resin layer edge lap electrode 2, both of which have a regular pattern structure; the bridge electrode 1 is connected to a driving line or a sensing line that turns on the ITO electrode; The electrode 2 is connected to a driving line or a sensing line that turns on the metal electrode and the ITO electrode;

Formation of the first insulating layer:

After passing through the transparent substrate of the ITO bridge electrode, a thin layer of negative photoresist material is coated on the surface of the ITO film, and the photoresist coating thickness is 0.5 um~3 um;

Pre-baked, exposed, and developed by photoresist, and finally formed a pattern of insulation layer with a thickness of 0.5~3um and regular;

Formation of ITO electrode layer:

Forming a transparent substrate of the first insulating layer, and again performing ITO coating to form a transparent and uniform thickness ITO film layer on the glass substrate, the thickness of which is 50 angstroms to 2000 angstroms;

The ITO coated transparent substrate is coated with a uniform thickness of a positive photoresist material on the surface of the ITO, and the photoresist coating thickness is lum~5um;

After pre-baking, exposing, developing, etching, and removing the photoresist film, a thickness of 50-2000 angstroms and a regular ITO pattern or electrode are finally formed;

The ITO electrode comprises an ITO electrode 1 and an ITO electrode 2, and has a regular pattern structure; the ITO electrode 1 and the ITO electrode 2 are on the same layer, independent of each other, insulated from each other, and vertically designed;

Formation of the metal electrode layer:

Forming a transparent substrate of the ITO electrode layer, and forming a metal film layer having a uniform thickness on the transparent substrate through a metal plating film, and having a thickness of 500 angstroms to 4000 angstroms;

The metal-coated transparent substrate is coated with a uniform thickness of a positive photoresist material on the metal surface, and the photoresist coating thickness is lum~5um; Pre-baked, exposed, developed, etched, and stripped with photoresist, resulting in a thickness of

500-4000 angstroms and regular metal patterns or electrodes;

Formation of the second insulating layer:

After passing through the transparent substrate of the metal electrode, a thin layer of negative photoresist material is coated on the surface of the metal film, and the thickness of the photoresist coating is 0.5 um~3 um;

The photoresist is pre-baked, exposed, developed, and finally formed into a thickness of 0.5 to 3 um and a regular insulating layer pattern.

7. The method of preparing an ITO bridge capacitive touch screen of claim 6 wherein:

The capacitor glass substrate is a chemically strengthened glass substrate having a thickness of 0.33 to 0.7 mm; the ITO comprises In203 and Sn02, and the mass ratio thereof is 85 to 95: 5 to 15.

8. The method of preparing an ITO bridge capacitive touch screen according to claim 7, wherein:

The main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and positive photosensitive agent; the main component of the negative photoresist material is propylene glycol monomethyl ether acetate, acrylic resin, epoxy resin And negative photosensitizers.

9. The method of preparing an ITO bridge capacitive touch screen according to claim 8, wherein:

The metal film of the metal coating is a sandwich structure of MoNb, AlNd, MoNb, and the thickness thereof is 50 angstroms to 500 angstroms: 500 angstroms to 3,000 angstroms: 50 angstroms to 500 angstroms. , in MoNb alloy material, the mass ratio of Mo and Nb is 85-95: 5-15, and the mass ratio of A1 and Nd in AlNd alloy material is 95~98: 2-5

The method for preparing an ITO bridge capacitance touch screen according to claim 9, wherein the ITO coating is by vacuum magnetron sputtering, or by chemical vapor deposition, or by thermal evaporation, or For sol gel.