CN202171796U - ITO through-hole capacitor type touch screen - Google Patents
ITO through-hole capacitor type touch screen Download PDFInfo
- Publication number
- CN202171796U CN202171796U CN2011202975563U CN201120297556U CN202171796U CN 202171796 U CN202171796 U CN 202171796U CN 2011202975563 U CN2011202975563 U CN 2011202975563U CN 201120297556 U CN201120297556 U CN 201120297556U CN 202171796 U CN202171796 U CN 202171796U
- Authority
- CN
- China
- Prior art keywords
- ito
- electrode
- hole
- ethylmercurichlorendimides
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Abstract
The utility model discloses an ITO through-hole capacitor type touch screen, comprising a decoration glass base plate, a capacitor function base plate laminated on the decoration glass base plate by an optical adhesive layer, an ITO electrode, a first insulation layer, an ITO through-hole electrode, a metal electrode and a second insulation layer which are laminated on the capacitor function base plate in turn; wherein the ITO electrode comprises a capacitor screen driving electrode (ITO electrode 1) and a sensing electrode (ITO electrode 2), the ITO electrode 1 and the ITO electrode 2 have the regular graphic structures and arranged on the same layer in a mutually independent and insulated way and the ITO electrodes 1,2 are vertically designed. The lamination structure of the capacitor type touch screen and the ITO conduction way are reasonably designed, the ITO signal electrode is vertically conducted using the way of the ITO through hole, the light transmittance, the working stability and the touch sensitivity of the capacitor type touch screen are effectively increased.
Description
Technical field
The utility model relates to the capacitance touch screen technical field, especially relates to a kind of capacitance touch screen and manufacturing approach thereof through the ITO via design.
Background technology
Along with the development of electronics technology, the keyboard of mobile phone, digital camera, handheld device, vehicle-carrying DVD, MP3, instrument etc. or mouse are touched gradually to shield and substitute at present.The product of touch-screen is not very burning hot several years ago, and Along with people's is more and more for the contact of touch screen product, is also approved that speed of development was accelerated gradually in nearly 2 years by more people.Touch-screen is grown up rapidly, has not only evoked fierce more industry competition, has also promoted technological development indirectly, and the mode of operation of its multi-point touch has risen to a new height to the influence power of touch-screen product especially, is also paid close attention to by people gradually.
Touch-screen is mainly formed by touching detection part and touch screen controller, touches detection part and is installed in the indicator screen front, is used to detect user touch location, send touch screen controller after the reception; And the main effect of touch screen controller is to receive touch information from touch point detection device, and converts it to contact coordinate, gives CPU again, and its can receive simultaneously the order that CPU sends and carry out.
According to the principle of work of touch-screen medium with transmission information; Touch-screen can be divided into four kinds; Be respectively resistance-type, capacitor induction type, infrared-type and surface acoustic wave type, current what be widely used is resistive touch screen, and it utilizes pressure sensitive to carry out resistance control; Resistive touch screen is a kind of laminated film of multilayer, and its major part is a resistance film screen that cooperates very much with display surface.Resistance film screen be with one deck glass or duroplasts flat board as basic unit, the surface scribbles layer of transparent oxidized metal (transparent conductive resistance) ITO (tin indium oxide) conductive layer, is stamped the smooth anti-friction plastic layer of one deck outside surface cure process above again; Its inside surface also scribbles one deck ITO coating; Between them, have the transparent isolating points of many tiny (less than 1/1000 inches) to separate insulation to two conductive layers, when the finger touch screen, two conductive layers has just had contact in the position, touch point; Resistance changes; On X and Y both direction, produce signal, send touch screen controller, controller to detect this contact then and calculate (X; Y) position, the mode according to analog mouse operates again.
The ultimate principle of capacitive touch screen is to utilize the induction by current of human body to carry out work, and capacitive touch screen is two layers of compound glass screen, and the inside surface interlayer of glass screen scribbles ITO (tin indium oxide) conducting film (plated film electro-conductive glass); Outermost layer is a skim silicon soil glassivation, and the ITO coating is drawn four electrodes as workplace on four angles; When finger touch was on screen, because people's bulk electric field, user and touch screen surface formed a coupling capacitance; For high-frequency current, electric capacity is direct conductor, so finger siphons away a very little electric current from contact point; This electric current flows out the electrode from four jiaos of touch-screen respectively; And the electric current of these four electrodes of flowing through is directly proportional with the distance of pointing four jiaos, and controller draws touch point position through the accurate Calculation to these four current ratios.
In capacitive touch screen, projection-type capacitive touch screen is that current application is a kind of comparatively widely, has characteristics such as simple in structure, transmittance height.The touch sensible parts of projection-type capacitive touch screen are generally a plurality of column electrodes and the row electrode is staggered to form the induction matrix.Usually the design that adopts comprises the two sides that column electrode and row electrode is separately positioned on same transparency carrier, prevents short circuit to occur at intervening portion; Perhaps column electrode and row electrode are arranged on the homonymy of same transparency carrier; Be formed on the same conducting film (being generally the ITO conducting film); Separate through the mode that insulation course and frame conducting bridge are set at column electrode and the staggered position of row electrode; Column electrode and row electrode are separated and guarantee conducting on direction separately, can prevent effectively that it is in the intervening portion short circuit.
Usually the design proposal that adopts is: one of column electrode or row electrode are provided with on conducting film continuously; Then another electrode electrode with continuous setting on conducting film serves as to be arranged to some electrode blocks at interval; Position at cross-point is electrically connected adjacent electrode block through conducting bridge, thereby forms the continuous electrode on the other direction; Separate by insulation course between the electrode of conducting bridge and setting continuously, thereby effectively stop column electrode and row electrode in the cross-point short circuit.Usually the design proposal that adopts is: (1) stepped construction is followed successively by transparency carrier, first direction electrode, insulation course, conducting bridge; Perhaps (2) stepped construction is followed successively by transparency carrier, conducting bridge, insulation course, first direction electrode.
But can there be the defective of the not high and poor work stability of transmittance in the capacitive touch screen that adopts traditional design proposal; The capacitive touch screen transmittance of traditional design proposal is difficult to break through 80%; And during whole stressed flexural deformation; Occur at the interface easily separating, cause electrode to open circuit and touch inefficacy, touch sensible parts damages.
The utility model content
One of purpose of the utility model is to provide a kind of ITO through hole capacitance touch screen; Stepped construction and ITO conduction mode through to capacitance touch screen reasonably design; The mode of employing ITO through hole is conducting ITO signal electrode up and down; Effectively improve transmittance, job stability and the touch sensitivity of capacitive touch screen.
For realizing above-mentioned purpose, the utility model adopts following technical scheme:
A kind of ITO through hole capacitance touch screen comprises
Comprise ambetti substrate (cover-plate glass), be laminated in the capacitive function substrate on the ambetti substrate, and stack gradually in the ITO of capacitive function substrate electrode, first insulation course, ITO through hole electrode, metal electrode and second insulation course through optical cement; Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2), has the regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, and be separate, mutually insulated, vertical design.
Preferably: described capacitive function substrate thickness is 0.33 ~ 0.7 millimeter a chemically reinforced glass substrate; Described ambetti substrate thickness is 0.5 ~ 2.0 millimeter a chemically reinforced glass substrate, and the capacitive function substrate material is borosilicate or soda-lime glass; The number of the through hole of said ITO through hole electrode can be one or several, and the through hole electrode mode has circular punching, oval punching, triangle punching, trapezoidal punching, or rectangle punching; Said ITO electrode regular texture and through hole are complementary.
Said ITO electrode layers thickness is 50 ~ 2000 Ethylmercurichlorendimides (face resistance is 10 ~ 430 ohm); The thickness of first insulation course is 0.5 ~ 3um; Described ITO through hole electrode thickness is 50 Ethylmercurichlorendimides ~ 2000 Ethylmercurichlorendimides (face resistance is 10 ~ 430 ohm); The thickness of metal electrode layer is 500 ~ 4000 Ethylmercurichlorendimides; Second thickness of insulating layer is 0.5 ~ 3um.
The metallic diaphragm of described metal coating is MoNb; AlNd; MoNb piles up the sandwich structure that forms; Thickness is in 50 Ethylmercurichlorendimides ~ 500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimides ~ 3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimides ~ 500 Ethylmercurichlorendimide ratios collocation, and wherein Mo and Nb mass ratio are 85 ~ 95:5 ~ 15 in the MoNb alloy material, Al and Nd mass ratio are 95 ~ 98:2 ~ 5 in the AlNd alloy material.
Described first insulation course makes ITO electrode and ITO through hole electrode be in insulation status, not conducting mutually.The ITO through hole electrode plays ITO conducting effect, and the conducting capacitance plate drives or the induction line electrode, has the regular figure structure.The FPC nation of ITO electrode signal conducting decides the zone passage metal electrode and realizes.The second dielectric protection layer metal electrode and ITO lead make it and air insulation.
The utility model compared with prior art has following advantage and beneficial effect:
The utility model is through reasonably being provided with stepped construction, and the Optimization Layer stack structure is designed to modes such as ITO through hole conduction electrode layer, has significantly promoted the yield of product, reduces cost, and promotes product reliability.Through appropriate design, make transmitance to reach more than 90% to each layer.
Description of drawings
Fig. 1 is the structural representation of the described ITO through hole of the utility model capacitance touch screen;
Fig. 2 is the local structure for amplifying synoptic diagram of ITO through hole figure;
Fig. 3 is the cross-sectional view of ITO through hole.
Embodiment
Below in conjunction with specific embodiment the utility model is done further explain.
As shown in Figure 1; Described ITO through hole capacitance touch screen; Comprise that thickness is at 0.5 ~ 2.0 millimeter chemical enhanced ambetti substrate 11; Through the optical cement 12 capacitive function substrates 13 folded on the ambetti substrate layer by layer, thickness is 0.33 ~ 0.7 millimeter, and stacks gradually in the ITO of capacitive function substrate electrode 14, first insulation course 15, ITO through hole electrode 16, metal electrode 17 and second insulation course 18; Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2), has the regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, and be separate, mutually insulated, vertical design.
Fig. 2 and shown in Figure 3 is the partial structurtes enlarged diagram or the cross-sectional view of the said ITO through hole of present embodiment capacitance touch screen: first insulation course 35 makes ITO electrode and ITO through hole electrode 36 be in insulation status, not conducting mutually; The ITO electrode comprises that capacitance plate drives (ITO electrode 1) 32 and induction electrode (ITO electrode 2) 33.ITO through hole electrode 36 plays ITO conducting effect, and the conducting capacitance plate drives or the induction line electrode, has the regular figure structure.The FPC zone passage metal electrode of ITO electrode signal conducting is realized.Second insulation course, 34 protection metal electrode and ITO leads make it and air insulation.
Its preparation technology is following:
The formation of ITO electrode:
Through the transparent glass substrate of ITO plated film, at the uniform positivity photoresist of its ITO surface coated one layer thickness, the photoresistance coating thickness is 1um ~ 5um; Positivity photoresist major component is acetate propylene glycol monomethyl ether ester, epoxy resin and a photosensitive material.The photoresistance coating thickness is 1um ~ 5um.Coating photoresist mode has roller coating, spin coating, modes such as blade coating.
Roasting in advance through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 50 ~ 2000 Ethylmercurichlorendimides and regular ITO pattern or electrode.In advance roasting temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.The soup that the ITO etching solution adopts hydrochloric acid and nitric acid to mix by a certain percentage drops between 1 ~ 3 its sour pH value, etch temperature operation between 40 ~ 50 degree.Take off photoresistance film liquid and adopt dimethyl sulfoxide and monoethanolamine to mix according to a certain percentage, number percent is 70%:30%, the operation between 40 ~ 80 degree of demoulding temperature.
Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2), has the regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, and be separate, mutually insulated, vertical design.
The formation of first insulation course:
Through the transparent glass substrate behind the ITO electrode; Be coated with the uniform negativity photoresist of a layer thickness at its ITO face; Negativity photoresist major component is an acetate propylene glycol monomethyl ether ester; The acrylic resin, epoxy resin and negative photosensitive agent (commodity Taiwan Da Xing company by name produces POC A46), the photoresistance coating thickness is 0.5um ~ 3um; Coating photoresist mode has spin coating, modes such as blade coating.
Described pattern perforate mode and quantity are the position of ITO through hole, and the regular figure of pattern is respectively round hole, oval aperture, triangle perforate, trapezoidal perforate, modes such as rectangle perforate.
Roasting in advance through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and finally forming thickness is the insulating layer pattern of 0.5 ~ 3um and rule.In advance roasting temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.It is roasting firmly to pass through insulation course again, and condition is 200 to spend to 300 degree, and the time is half an hour to 3 hour, and through behind the above-mentioned processing procedure, finally forming thickness is 0.5um ~ 3um, first insulation course of figure rule.
The formation of ITO through hole electrode layer:
Form the transparent glass substrate of first insulation course, pass through the ITO plated film once more, make on glass substrate, to form layer of transparent and the uniform ITO rete of thickness, its thickness is 50 Ethylmercurichlorendimides ~ 2000 Ethylmercurichlorendimides (face resistance is 10 ~ 430 ohm); The ITO material is made up of In2O3 and SnO2, and its mass ratio is 85 ~ 95:5 ~ 15.The mode of ITO plated film has the vacuum magnetic control sputter, chemical vapour deposition technique, hot vapor deposition, collosol and gel.
Glass substrate through the ITO plated film; At the uniform positivity photoresist of its ITO surface coated one layer thickness; Positivity photoresist major component is an acetate propylene glycol monomethyl ether ester, epoxy resin and positivity emulsion (TR400 that commodity Taiwan new Ying Cai company by name produces); The photoresistance coating thickness is 1um ~ 5um.Coating photoresist mode has roller coating, spin coating, modes such as blade coating.
Roasting in advance through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 50 ~ 2000 Ethylmercurichlorendimides (face resistance is 10 ~ 430 ohm) and regular ITO pattern or electrode.In advance roasting temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.The soup that the ITO etching solution adopts hydrochloric acid and nitric acid to mix by a certain percentage drops between 1 ~ 3 its sour pH value, etch temperature operation between 40 ~ 50 degree.Take off photoresistance film liquid and adopt dimethyl sulfoxide and monoethanolamine to mix according to a certain percentage, number percent is 70%:30%, the operation between 40 ~ 80 degree of demoulding temperature.
Described ITO through hole electrode has the regular figure structure, and the number of through hole can be one or several, and the through hole electrode mode has circular punching; Oval punching; The triangle punching, trapezoidal punching, hole knockouts such as rectangle; Purpose makes the ITO through hole electrode contact more stable, more reliable with ITO electrode (containing ITO electrode 1 and ITO electrode 2).Said through hole is opened on first insulation course (position that needs the ITO through hole).
ITO through hole electrode conduction mode: the through hole electrode of ITO electrode 1 through first insulation course conducting that makes progress; Connecting through the ITO through hole electrode level on first insulation course; Through hole electrode through first insulation course is conducting to ITO electrode 1 downwards again, makes ITO electrode 1 form the capacitance plate driving access.ITO electrode 2 direct film forming are on glass substrate, and single ITO electrode links to each other, directly conducting.
The formation of metal electrode layer:
Form the glass substrate of ITO through hole electrode layer, pass through metal coating again, make on glass substrate, to form a layer thickness even metal rete, its thickness is 500 Ethylmercurichlorendimides ~ 4000 Ethylmercurichlorendimides.The metallic diaphragm material is by MoNb, AlNd, and MoNb piles up the sandwich structure that forms, and thickness is arranged in pairs or groups by a certain percentage, and wherein Mo and Nb mass ratio are 90:10 in the MoNb alloy material, and Al and Nd mass ratio are 97:3 in the AlNd alloy material.The metal material type selecting also can be made up of silver alloy or aldary, and composition combines by a certain percentage.Metal coating is the vacuum magnetic control sputter.
Glass substrate through metal coating is coated with the uniform positivity photoresist of a layer thickness in its metal surface, positivity photoresist major component is an acetate propylene glycol monomethyl ether ester, epoxy resin and positivity emulsion; The photoresistance coating thickness is 1um ~ 5um.Coating photoresist mode has roller coating, spin coating, modes such as blade coating.Roasting in advance through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 500 ~ 4000 Ethylmercurichlorendimides and regular metal pattern or electrode.In advance roasting temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.The soup that metal etch liquid adopts phosphoric acid, acetic acid and nitric acid to mix by a certain percentage, etch temperature operation between 40 ~ 50 degree.Take off photoresistance film liquid and adopt dimethyl sulfoxide and monoethanolamine to mix according to a certain percentage, number percent is 70%:30%, the operation between 40 ~ 80 degree of demoulding temperature.
The formation of second insulation course:
Glass substrate through behind the metal electrode is coated with the uniform negativity photoresist of a layer thickness at its metal face, and negativity photoresist major component is an acetate propylene glycol monomethyl ether ester, acrylic resin, epoxy resin and negative photosensitive agent; The photoresistance coating thickness is 0.5um ~ 3um.Coating photoresist mode has spin coating, modes such as blade coating.
Roasting in advance through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and finally forming thickness is the insulating layer pattern of 0.5 ~ 3um and rule.In advance roasting temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.It is roasting firmly to pass through insulation course again, and condition is 200 to spend to 300 degree, and the time is 0.5 hour to 3 hours, and through behind the above-mentioned processing procedure, finally forming thickness is 0.5um ~ 3um, second insulation course of figure rule.
Above content is the further explain that combines concrete preferred implementation that the utility model is done, and can not assert that the practical implementation of the utility model is confined to these explanations.For the those of ordinary skill of technical field under the utility model, under the prerequisite that does not break away from the utility model design, can also make some simple deduction or replace, all should be regarded as belonging to the protection domain of the utility model.
Claims (4)
1. ITO through hole capacitance touch screen; Comprise the ambetti substrate; Be laminated in the capacitive function substrate on the decorating board through optical cement, and stack gradually in the ITO of capacitive function substrate electrode, first insulation course, ITO through hole electrode, metal electrode and second insulation course; Described ITO electrode comprises that capacitance plate drives and induction electrode, has the regular figure structure; Capacitance plate driving and induction electrode are in same aspect, and be separate, mutually insulated, vertical design.
2. ITO through hole capacitance touch screen as claimed in claim 1 is characterized in that: described capacitive function substrate thickness is 0.33 ~ 0.7 millimeter a chemically reinforced glass substrate; Described ambetti substrate thickness is 0.5 ~ 2.0 millimeter a chemically reinforced glass substrate; The number of the through hole of said ITO through hole electrode can be one or several, and the through hole electrode mode has circular punching, oval punching, triangle punching, trapezoidal punching, or rectangle punching.
3. ITO through hole capacitance touch screen as claimed in claim 2 is characterized in that: said ITO electrode layers thickness is 50 ~ 2000 Ethylmercurichlorendimides; The thickness of first insulation course is 0.5 ~ 3um; Described ITO through hole electrode thickness is 50 Ethylmercurichlorendimides ~ 2000 Ethylmercurichlorendimides; The thickness of metal electrode layer is 500 ~ 4000 Ethylmercurichlorendimides; Second thickness of insulating layer is 0.5 ~ 3um.
4. ITO through hole capacitance touch screen as claimed in claim 3 is characterized in that:
The metallic diaphragm of described metal coating is MoNb, and AlNd, MoNb pile up the sandwich structure form, and thickness is by 50 Ethylmercurichlorendimides ~ 500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimides ~ 3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimides ~ 500 Ethylmercurichlorendimide ratios are arranged in pairs or groups.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202975563U CN202171796U (en) | 2011-08-16 | 2011-08-16 | ITO through-hole capacitor type touch screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202975563U CN202171796U (en) | 2011-08-16 | 2011-08-16 | ITO through-hole capacitor type touch screen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202171796U true CN202171796U (en) | 2012-03-21 |
Family
ID=45829989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202975563U Expired - Lifetime CN202171796U (en) | 2011-08-16 | 2011-08-16 | ITO through-hole capacitor type touch screen |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202171796U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102289334A (en) * | 2011-08-16 | 2011-12-21 | 深圳市宝明科技股份有限公司 | Indium tin oxide (ITO) through hole capacitance touch screen and method for manufacturing same |
| WO2013117130A1 (en) * | 2012-02-09 | 2013-08-15 | 深圳市宝明科技股份有限公司 | Non-lapping integrated capacitive touch screen without metal electrode layer and manufacturing method thereof |
-
2011
- 2011-08-16 CN CN2011202975563U patent/CN202171796U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102289334A (en) * | 2011-08-16 | 2011-12-21 | 深圳市宝明科技股份有限公司 | Indium tin oxide (ITO) through hole capacitance touch screen and method for manufacturing same |
| CN102289334B (en) * | 2011-08-16 | 2013-01-23 | 深圳市宝明科技股份有限公司 | Indium tin oxide (ITO) through hole capacitance touch screen and method for manufacturing same |
| WO2013117130A1 (en) * | 2012-02-09 | 2013-08-15 | 深圳市宝明科技股份有限公司 | Non-lapping integrated capacitive touch screen without metal electrode layer and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102236492B (en) | ITO (Indium Tin Oxide) bridge crossing capacitive touch screen and manufacturing method thereof | |
| CN102253781B (en) | Metal-bridge integrated capacitive touch screen and manufacturing method | |
| CN102289334B (en) | Indium tin oxide (ITO) through hole capacitance touch screen and method for manufacturing same | |
| CN102253782B (en) | ITO (Indium Tin Oxide)-bridged integrated capacitive touch screen and manufacturing method | |
| CN102662543B (en) | ITO (indium tin oxide) gap-bridge integrated capacitive touch screen and manufacturing method of ITO gap-bridge integrated capacitive touch screen | |
| CN102298475B (en) | Indium tin oxide (ITO) through hole integrated capacitive touch screen and production method thereof | |
| CN102830880A (en) | Non-overlapped integral capacitive touch screen with ITO (indium tin oxide) layer and manufacturing method of novel non-overlapped integral capacitive touch screen | |
| CN102541383B (en) | Non-lapping integrated capacitive touch screen without metal electrode layer and manufacturing method for non-lapping integrated capacitive touch screen | |
| CN104035644A (en) | Color capacitive touch screen and manufacturing method thereof | |
| CN102629176A (en) | Novel metal bridge integrated capacitive touch screen and manufacture method thereof | |
| CN102637102A (en) | Novel overlapping integral capacitor touch screen and manufacturing method thereof | |
| CN202171796U (en) | ITO through-hole capacitor type touch screen | |
| CN201876858U (en) | Double-sided staggered capacitive touch screen | |
| CN202183091U (en) | Information technology outsourcing (ITO) bridge capacitance touch screen | |
| CN201757891U (en) | High light penetration type capacitor touch-screen | |
| CN102637101B (en) | Novel ITO (indium tin oxide) through hole integrated capacitive touch screen and production method thereof | |
| CN202711212U (en) | Novel non-metallic electrode layer non-overlapping one-piece capacitive touch screen | |
| CN201837985U (en) | Dual-sided straight strip-shaped capacitive touch screen | |
| CN202230465U (en) | Indium tin oxide (ITO) through hole integrated capacitive touch screen | |
| CN102662542A (en) | Novel metal-electrode-layer-free non-overlapped integral capacitive touch screen and manufacturing method thereof | |
| CN201788495U (en) | Capacitive touch screen with single-sided double-layer diamond structure | |
| CN202331415U (en) | Metal-gap-bridge integrated capacitive touch screen | |
| CN202486761U (en) | Non-lap-joint integrated capacitive touch screen | |
| CN202177885U (en) | Indium tin oxide (ITO) gap bridge integrated capacitive touch screen | |
| CN202486760U (en) | Non-overlapped integral capacitive touch screen for metal-free electrode layers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: HUIZHOU BAOMING SEIKO CO., LTD. Free format text: FORMER OWNER: SHENZHEN BAOMING TECHNOLOGY CO., LTD. Effective date: 20120428 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 518000 SHENZHEN, GUANGDONG PROVINCE TO: 516000 HUIZHOU, GUANGDONG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20120428 Address after: 516000 Comprehensive Industrial Park, Western Dayawan, Guangdong, Huizhou Patentee after: Huizhou Baoming Seiko Co., Ltd. Address before: 518000, District, Guangdong City, Baoan District Province, Guanlan Road, Niu Tai Lake paddy Industry Park, B District Patentee before: Shenzhen Baoming Technology Co., Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120321 |