CN102637101B - Novel ITO (indium tin oxide) through hole integrated capacitive touch screen and production method thereof - Google Patents
Novel ITO (indium tin oxide) through hole integrated capacitive touch screen and production method thereof Download PDFInfo
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Abstract
The invention discloses a novel ITO (indium tin oxide) through hole integrated capacitive touch screen and a production method thereof. The ITO through hole integrated capacitive touch screen comprises a transparent glass substrate or resin substrate, and further comprises a silicon dioxide layer, a niobium pentoxide layer, a black resin layer, ITO electrodes, a first insulating layer, an ITO through hole electrode, a metal electrode and a second insulating layer, which are sequentially stacked onto the transparent glass substrate. The silicon dioxide layer fully covers the glass substrate, and the niobium pentoxide layer fully covers the silicon dioxide layer. The ITO electrodes include an ITO electrode 1 and an ITO electrode 2 which have regular pattern structures. By means of reasonable design of the stack structure of the capacitive touch screen and the ITO communication way, the ITO signal electrodes are vertically communicated through ITO through holes, transmissivity of the capacitive touch screen is effectively improved, visibility of ITO patterns is reduced, and reliability of the touch screen is further improved.
Description
Technical field
The present invention relates to capacitance touch screen technical field, especially relate to a kind of by integrated capacitive touch screen and the manufacture method thereof of ITO via design.
Background technology
Along with the development of electronics technology, the keyboard of mobile phone, digital camera, handheld device, vehicle-carrying DVD, MP3, instrument etc. or mouse are touched gradually to shield and substitute at present.The product of touch-screen is not very burning hot several years ago, and more and more for the contact of touch screen product along with people, within nearly 2 years, by more people, is approved yet, speed of development is accelerated gradually.Touch-screen is grown up rapidly, has not only evoked fiercer industry competition, has also indirectly promoted the development of technology, and the mode of operation of its multi-point touch has risen to a new height the influence power of touch-screen product especially, also by people, is paid close attention to gradually.
Touch-screen mainly forms by touching detection part and touch screen controller, touches detection part and is arranged on before indicator screen, for detection of user touch location, send touch screen controller after reception; And the Main Function of touch screen controller is to receive touch information from touch point detection device, and convert it to contact coordinate, then give CPU, its can receive the order that CPU sends simultaneously and be carried out.
According to the medium of the principle of work of touch-screen and transmission information, touch-screen can be divided into four kinds, be respectively resistance-type, capacitor induction type, infrared-type and surface acoustic wave type, current what be widely used is resistive touch screen, and it utilizes pressure sensitive to carry out resistance control; Resistive touch screen is a kind of laminated film of multilayer, and its major part is a resistance film screen coordinating very much with display surface.Resistance film screen is to using one deck glass or duroplasts flat board as basic unit, surface scribbles layer of transparent oxidized metal (transparent conductive resistance) ITO(tin indium oxide) conductive layer, be stamped again the smooth anti-friction plastic layer of one deck outside surface cure process above, its inside surface also scribbles one deck ITO coating, between them, there is the transparent isolating points of many tiny (being less than 1/1000 inch) that two conductive layers is separated to insulation, when finger touch screen, two conductive layers has just had contact in position, touch point, resistance changes, on X and Y both direction, produce signal, then send touch screen controller, controller detects this contact and calculates (X, Y) position, according to the mode of analog mouse, operate again.
The ultimate principle of capacitive touch screen is to utilize the electric current induction of human body to carry out work, capacitive touch screen is two layers of compound glass screen, the inside surface interlayer of glass screen scribbles ITO(tin indium oxide) conducting film (plated film electro-conductive glass), outermost layer is skim silicon soil glassivation, ITO coating is as workplace, on four angles, draw four electrodes, when finger touch is on screen, due to people's bulk electric field, user and touch screen surface form a coupling capacitance, for high-frequency current, electric capacity is direct conductor, so finger siphons away a very little electric current from contact point, this electric current flows out in the electrode from four jiaos of touch-screen respectively, and the electric current of these four electrodes of flowing through is directly proportional to the distance of finger to four jiaos, controller is by the accurate Calculation to these four current ratios, draw the position of touch point.
In capacitive touch screen, projection-type capacitive touch screen is that current application is a kind of comparatively widely, have simple in structure, transmittance high.The touch sensible parts of projection-type capacitive touch screen are generally a plurality of column electrodes and row electrode is staggered to form induction matrix.Conventionally the design adopting comprises the two sides that column electrode and row electrode is separately positioned on to same transparency carrier, prevents from occurring short circuit at intervening portion; Or column electrode and row electrode are arranged on to the homonymy of same transparency carrier, be formed on same conducting film (being generally ITO conducting film), at column electrode and the staggered position of row electrode, by being set, the mode of insulation course frame conducting bridge separates, column electrode and row electrode are separated and guarantee conducting in direction separately, can effectively prevent that it is in intervening portion short circuit.
Conventionally the design proposal adopting is: one of column electrode or row electrode arrange continuously on conducting film, another electrode be take the electrode arranging continuously and as interval, is arranged to some electrode blocks on conducting film, position at cross-point is electrically connected to adjacent electrode block by conducting bridge, thereby forms the continuous electrode on other direction; Between the electrode of conducting bridge and setting continuously, by insulation course, separated, thereby effectively stop column electrode and row electrode in cross-point short circuit.Conventionally the design proposal adopting is: (1) stepped construction is followed successively by transparency carrier, first direction electrode, insulation course, conducting bridge; Or (2) stepped construction is followed successively by transparency carrier, conducting bridge, insulation course, first direction electrode.
But can there is the defect of the not high and poor work stability of transmittance in the capacitive touch screen that adopts traditional design proposal, the capacitive touch screen transmittance of traditional design proposal is difficult to break through 80%, and during whole stressed flexural deformation, easily at interface, occur separated, cause electrode to open circuit and touch inefficacy, touch sensible parts damages.
Summary of the invention
One of object of the present invention is to provide a kind of novel I TO through hole integrated capacitive touch screen, by the stepped construction of capacitance touch screen and ITO conduction mode are reasonably designed, adopt the upper and lower conducting ITO of the mode signal electrode of ITO through hole, effectively improve the transmitance of capacitive touch screen, the visuality that has reduced ITO pattern, the reliability of touch-screen further promotes.
For achieving the above object, the present invention adopts following technical scheme:
A novel I TO through hole integrated capacitive touch screen, comprises transparency carrier, stacks gradually silicon dioxide layer, niobium pentaoxide layer, black resin layer, ITO electrode, the first insulation course, ITO through hole electrode, metal electrode and the second insulation course in transparency carrier; Described ITO electrode comprises ITO electrode 1 and ITO electrode 2, has regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, separate, mutually insulated, vertical design; Described transparency carrier comprises He Fei viewfinder area, viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen; Described metal electrode circuit wiring is only at black resin layer region.The degree of described silicon dioxide bed thickness is 100 ~ 1000 Ethylmercurichlorendimides, and the thickness of described niobium pentaoxide layer is 50 ~ 500 Ethylmercurichlorendimides.
A kind of novel I TO through hole integrated capacitive touch screen, its stepped construction also can adopt, transparency carrier, stacks gradually black resin layer, silicon dioxide layer, niobium pentaoxide layer, ITO electrode, the first insulation course, ITO through hole electrode, metal electrode and the second insulation course in transparency carrier; Described ITO electrode comprises ITO electrode 1 and ITO electrode 2, has regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, separate, mutually insulated, vertical design; Described transparency carrier comprises He Fei viewfinder area, viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen; Described metal electrode circuit wiring is only at black resin layer region.The degree of described silicon dioxide bed thickness is 100 ~ 1000 Ethylmercurichlorendimides, and the thickness of described niobium pentaoxide layer is 50 ~ 500 Ethylmercurichlorendimides.
Described ITO through hole electrode comprises through hole electrode 1 and the black resin layer edge through hole electrode 2 of display screen vision area, there is regular figure structure, the number of through hole can be one or several, through hole electrode mode has circular punching, oval punching, triangle punching, trapezoidal punching, the hole knockouts such as rectangle, object makes ITO through hole electrode contact more stable, more reliable with ITO electrode (containing ITO1 and ITO2 electrode).Described through hole is opened on the first insulation course (position that needs ITO through hole).
Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2) partial electrode can be overlapped on black resin top, and ITO electrode need be from the climbing of glass bottom to black resin top layer.
Preferably: described transparency carrier is thickness at the chemically reinforced glass substrate of 0.5 ~ 2.0 millimeter; Described ITO electrode regular texture is rhombus, or bar shaped, or box-shaped, or snowflake type, or the regular texture such as cross.
Described black resin layer can effectively block the figure layer of non-visible area, can shading, and the visible of the product belows such as metal wire.The first insulation course makes ITO electrode and ITO through hole electrode in insulation status, not conducting mutually.ITO through hole electrode plays ITO conducting effect, and conducting capacitance plate drives or induction line electrode, has regular figure structure.The flexible circuit board nation of ITO electrode signal conducting determines region and realizes by metal electrode.The second dielectric protection layer metal electrode and ITO wire, make it and air insulation.
Two of object of the present invention is to provide a kind of manufacture method of novel I TO through hole integrated capacitive touch screen, adopts following technical scheme:
The formation of silicon dioxide layer: through silicon dioxide plated film, make to form the silica coating of layer of transparent and even thickness on transparency carrier, its thickness is 100 ~ 1000 Ethylmercurichlorendimides;
The formation of niobium pentaoxide layer: through niobium pentaoxide plated film, make to form the niobium pentaoxide rete of layer of transparent and even thickness on silicon dioxide layer, its thickness is 50 ~ 500 Ethylmercurichlorendimides;
The formation of black resin layer: black resin is uniformly coated on transparency carrier through rotary coating mode or the formula coating method of scraping, and coating thickness is 0.3 μ m ~ 5 μ m, pre-baked through well heater, exposure, develops, and makes it to form required black resin region;
Black resin region is the non-viewfinder area of display screen, and object is the figure layer that blocks non-visible area, can shading, and the visible of the product belows such as metal electrode; Described black resin be photonasty protective seam photoresist (commodity by Taiwan forever photochemistry produced EK410); it is a kind of black negativity photoresist; principal ingredient is: acrylic resin; epoxy resin; negative photosensitive agent; acetic acid propylene glycol monomethyl ether ester and black pigment, concrete ratio is resene: acetic acid propylene glycol monomethyl ether ester: black pigment and negative photosensitive agent=15 ~ 30:60 ~ 80:1 ~ 10.
Described black resin layer is trapezium structure, interior thickness is 0.3 μ m ~ 5 μ m, its bevel angle is that between 6 ~ 60 degree, angle is mild, and object is that ITO electrode (drive wire ITO electrode 1 and line of induction ITO electrode 2) can be because difference in thickness causes greatly ITO lead rupture during by slope.Black resin region is the non-viewfinder area of display screen, and object is for blocking metal electrode.
The formation of ITO electrode: transparency carrier is carried out chemical enhanced, then pass through ITO plated film, make to form the ITO rete of layer of transparent and even thickness on glass substrate, its thickness is 50 Ethylmercurichlorendimide ~ 2000 Ethylmercurichlorendimides;
Through the transparency carrier of ITO plated film, at the uniform positivity photoresist of its ITO surface-coated a layer thickness, light blockage coating thickness is 1 μ m ~ 5 μ m;
Pre-baked through photoresistance, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 50 ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 430 ohm) and regular ITO pattern or electrode.
Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2), has regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, separate, mutually insulated, vertical design.
Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2) partial electrode can be overlapped on black resin top, and ITO electrode need be from the climbing of glass bottom to black resin top layer.
The formation of the first insulation course:
Transparency carrier after ITO crosses bridge electrode, at the uniform negativity photoresist of its ITO face coating a layer thickness, light blockage coating thickness is 0.5 μ m ~ 3 μ m;
Pre-baked through photoresistance, exposure, develops, and finally forming thickness is 0.5 ~ 3 μ m and regular insulating layer pattern.
Described pattern perforate mode and quantity are the position of ITO through hole, and the regular figure of pattern, is respectively round hole, oval aperture, triangle perforate, trapezoidal perforate, the modes such as rectangle perforate.
The formation of ITO through hole electrode layer:
Form the transparency carrier of the first insulation course, again pass through ITO plated film, make to form the ITO rete of layer of transparent and even thickness on glass substrate, its thickness is 50 Ethylmercurichlorendimide ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 430 ohm);
Through the transparency carrier of ITO plated film, at the uniform positivity photoresist of its ITO surface-coated a layer thickness, light blockage coating thickness is 1 μ m ~ 5 μ m;
Pre-baked through photoresistance, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 50 ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 430 ohm) and regular ITO pattern or electrode.
Described ITO through hole electrode comprises through hole electrode 1 and the black resin layer edge through hole electrode 2 of display screen vision area, there is regular figure structure, the number of through hole can be one or several, through hole electrode mode has circular punching, oval punching, triangle punching, trapezoidal punching, the hole knockouts such as rectangle, object makes ITO through hole electrode contact more stable, more reliable with ITO electrode (containing ITO electrode 1 and ITO electrode 2).Through hole electrode 1 and through hole electrode 2 are at same layer, separate, mutually insulated.Described through hole is opened on the first insulation course (position that needs ITO through hole).
ITO through hole electrode 1 conduction mode: ITO electrode 1 is by the through hole electrode 1 upwards conducting of the first insulation course, at ITO through hole electrode 1 level connection joint passing through on the first insulation course, through hole electrode 1 by the first insulation course is conducting to ITO electrode 1 downwards again, makes ITO electrode 1 form capacitance plate and drives path.ITO electrode 2 direct formation of film at surfaces are on glass substrate, and single ITO electrode is connected, directly conducting.
ITO through hole electrode 2 conduction modes: film forming is passed through the through hole electrode 2 upwards conductings of the first insulation course at the ITO at black resin edge electrode (containing ITO electrode 1 and ITO electrode 2), through hole electrode 2 conducting that is connected with metal electrode again, make ITO electrode (containing ITO electrode 1 and ITO electrode 2) and metal electrode conducting, form capacitance plate function signal.
The formation of metal electrode layer:
Form the transparency carrier of ITO electrode layer, through metal coating, make it to form the uniform metallic diaphragm of a layer thickness on transparency carrier, its thickness is 500 Ethylmercurichlorendimide ~ 4000 Ethylmercurichlorendimides.
Through the transparency carrier of metal coating, at the uniform positivity photoresist of its metal surface coating a layer thickness, light blockage coating thickness is 1 μ m ~ 5 μ m;
Pre-baked through photoresistance, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 500 ~ 4000 Ethylmercurichlorendimides and regular metal pattern or electrode.
The formation of the second insulation course:
Transparency carrier after metal electrode, at the uniform negativity photoresist of its metal face coating a layer thickness, light blockage coating thickness is 0.5 μ m ~ 3 μ m;
Pre-baked through photoresistance, exposure, develops, and finally forming thickness is 0.5 ~ 3 μ m and regular insulating layer pattern.
Preferred: described transparency carrier is that thickness is at the chemically reinforced glass substrate of 0.5mm ~ 2.0mm; Described ITO is comprised of In2O3 and SnO2, and its mass ratio is 85 ~ 95:5 ~ 15.The mode of ITO plated film can adopt vacuum magnetic control sputter, chemical vapour deposition technique, hot evaporation, collosol and gel.
Described positivity photoresist major component is acetic acid propylene glycol monomethyl ether ester, epoxy resin and positivity emulsion (TR400 that commodity Taiwan by name Xin Yingcai company produces); Negativity photoresist major component is acetic acid propylene glycol monomethyl ether ester, acrylic resin, and epoxy resin and negative photosensitive agent (commodity Taiwan by name Da Xing company produces POC A46) coating photoresist mode has roller coating, spin coating, the modes such as blade coating.
Coating photoresist mode has roller coating, spin coating, the modes such as blade coating.
The metallic diaphragm of described metal coating is MoNb, AlNd, MoNb piles up the sandwich structure forming, thickness is in 50 Ethylmercurichlorendimide ~ 500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimide ~ 3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimide ~ 500 Ethylmercurichlorendimide ratios collocation, wherein in MoNb alloy material, Mo and Nb mass ratio are 85 ~ 95:5 ~ 15, and in AlNd alloy material, Al and Nd mass ratio are 95 ~ 98:2 ~ 5.
Metal material type selecting also can be comprised of silver alloy or aldary, and composition combines by a certain percentage.Metallic diaphragm plated film is vacuum magnetic control sputter.
Or adopting process:
The formation of black resin layer: black resin is uniformly coated on transparency carrier through rotary coating mode or the formula coating method of scraping, and coating thickness is 0.3 μ m ~ 5 μ m, pre-baked through well heater, exposure, develops, and makes it to form required black resin region;
The formation of silicon dioxide layer: through silicon dioxide plated film, make to form the silica coating of layer of transparent and even thickness on black resin layer, its thickness is 100 ~ 1000 Ethylmercurichlorendimides;
The formation of niobium pentaoxide layer: through niobium pentaoxide plated film, make to form the niobium pentaoxide rete of layer of transparent and even thickness on silicon dioxide layer, its thickness is 50 ~ 500 Ethylmercurichlorendimides;
Described black resin is photonasty protective seam photoresist, and described photoresist comprises acrylic resin, epoxy resin, negative photosensitive agent, acetic acid propylene glycol monomethyl ether ester and black pigment; Its ratio is resene: acetic acid propylene glycol monomethyl ether ester: black pigment and negative photosensitive agent=15 ~ 30:60 ~ 80:1 ~ 10;
The formation of ITO electrode: transparency carrier is carried out chemical enhanced, then pass through ITO plated film, make to form the ITO rete of layer of transparent and even thickness on glass substrate, its thickness is 50 Ethylmercurichlorendimide ~ 2000 Ethylmercurichlorendimides;
Through the transparency carrier of ITO plated film, at the uniform positivity photoresist of its ITO surface-coated a layer thickness, light blockage coating thickness is 1 μ m ~ 5 μ m;
Pre-baked through photoresistance, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 50 ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 430 ohm) and regular ITO pattern or electrode.
Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2), has regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, separate, mutually insulated, vertical design.
Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2) partial electrode can be overlapped on black resin top, and ITO electrode need be from the climbing of glass bottom to black resin top layer.
The formation of the first insulation course:
Transparency carrier after ITO crosses bridge electrode, at the uniform negativity photoresist of its ITO face coating a layer thickness, light blockage coating thickness is 0.5 μ m ~ 3 μ m;
Pre-baked through photoresistance, exposure, develops, and finally forming thickness is 0.5 ~ 3 μ m and regular insulating layer pattern.
Described pattern perforate mode and quantity are the position of ITO through hole, and the regular figure of pattern, is respectively round hole, oval aperture, triangle perforate, trapezoidal perforate, the modes such as rectangle perforate.
The formation of ITO through hole electrode layer:
Form the transparency carrier of the first insulation course, again pass through ITO plated film, make to form the ITO rete of layer of transparent and even thickness on glass substrate, its thickness is 50 Ethylmercurichlorendimide ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 430 ohm);
Through the transparency carrier of ITO plated film, at the uniform positivity photoresist of its ITO surface-coated a layer thickness, light blockage coating thickness is 1 μ m ~ 5 μ m;
Pre-baked through photoresistance, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 50 ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 430 ohm) and regular ITO pattern or electrode.
Described ITO through hole electrode comprises through hole electrode 1 and the black resin layer edge through hole electrode 2 of display screen vision area, there is regular figure structure, the number of through hole can be one or several, through hole electrode mode has circular punching, oval punching, triangle punching, trapezoidal punching, the hole knockouts such as rectangle, object makes ITO through hole electrode contact more stable, more reliable with ITO electrode (containing ITO electrode 1 and ITO electrode 2).Through hole electrode 1 and through hole electrode 2 are at same layer, separate, mutually insulated.Described through hole is opened on the first insulation course (position that needs ITO through hole).
ITO through hole electrode 1 conduction mode: ITO electrode 1 is by the through hole electrode 1 upwards conducting of the first insulation course, at ITO through hole electrode 1 level connection joint passing through on the first insulation course, through hole electrode 1 by the first insulation course is conducting to ITO electrode 1 downwards again, makes ITO electrode 1 form capacitance plate and drives path.ITO electrode 2 direct formation of film at surfaces are on glass substrate, and single ITO electrode is connected, directly conducting.
ITO through hole electrode 2 conduction modes: film forming is passed through the through hole electrode 2 upwards conductings of the first insulation course at the ITO at black resin edge electrode (containing ITO electrode 1 and ITO electrode 2), through hole electrode 2 conducting that is connected with metal electrode again, make ITO electrode (containing ITO electrode 1 and ITO electrode 2) and metal electrode conducting, form capacitance plate function signal.
The formation of metal electrode layer:
Form the transparency carrier of ITO electrode layer, through metal coating, make it to form the uniform metallic diaphragm of a layer thickness on transparency carrier, its thickness is 500 Ethylmercurichlorendimide ~ 4000 Ethylmercurichlorendimides.
Through the transparency carrier of metal coating, at the uniform positivity photoresist of its metal surface coating a layer thickness, light blockage coating thickness is 1 μ m ~ 5 μ m;
Pre-baked through photoresistance, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 500 ~ 4000 Ethylmercurichlorendimides and regular metal pattern or electrode.
The formation of the second insulation course:
Transparency carrier after metal electrode, at the uniform negativity photoresist of its metal face coating a layer thickness, light blockage coating thickness is 0.5 μ m ~ 3 μ m;
Pre-baked through photoresistance, exposure, develops, and finally forming thickness is 0.5 ~ 3 μ m and regular insulating layer pattern.
Compared with prior art, tool has the following advantages and beneficial effect in the present invention:
The present invention is by reasonably arranging stepped construction, on one deck glass substrate, complete touch function signal electrode and black resin overlayer, the order that comprises ITO through hole electrode layer etc. and the mode of pattern, effectively improve the transmitance of capacitive touch screen, the visuality that has reduced ITO pattern, the reliability of touch-screen further promotes.The advantages such as novel I TO through hole integrated capacitive touch screen of the present invention only has layer of transparent substrate, between thickness of glass 0.5mm ~ 2.0mm, has thin thickness, and quality is light; By the appropriate design to each layer, transmitance can be reached more than 90%.The present invention adopts ITO through hole mode feature: can greatly reduce ITO electrode at climbing and the probability that descending ruptures, increase its conducting yield.
Accompanying drawing explanation
Fig. 1 is the structural representation of ITO through hole capacitance touch screen of the present invention;
Fig. 2 is the glass basal plate structure schematic diagram described in the embodiment of the present invention;
Fig. 3 is the local structure for amplifying schematic diagram of ITO through hole figure;
Fig. 4 is the cross-sectional view of ITO through hole;
Fig. 5 is the cross-sectional view of novel I TO through hole integrated capacitive touch screen of the present invention;
Fig. 6 is embodiment product transmitance comparative test result figure;
Fig. 7 is the visual comparative test result figure of embodiment pattern.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail.
As shown in Figures 1 and 2, described ITO through hole capacitance touch screen, comprise that thickness, at chemically reinforced glass substrate or the resin material substrate 11 of 0.5 ~ 2.0 millimeter, stacks gradually silicon dioxide layer 12, niobium pentaoxide layer 13, black resin layer 14, ITO electrode 15, the first insulation course 16, ITO through hole electrode 17, metal electrode 18 and the second insulation course 19 in transparent glass substrate; Described ITO electrode 15 comprises that capacitance plate drives (ITO electrode 1) 42 and induction electrode (ITO electrode 2) 43, has regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, separate, mutually insulated, vertical design.Described hardened glass substrate 11 comprises 21He Fei viewfinder area, viewfinder area 22, and black resin layer 12 is distributed in the non-viewfinder area of display screen; Described metal electrode lines 16 tunnel wirings are only at black resin layer region 51.
Fig. 3 is to the partial structurtes enlarged diagram or the cross-sectional view that Figure 5 shows that ITO gap bridge capacitance touch screen described in the present embodiment: black resin layer 51 can effectively block the figure layer of non-visible area, can shading, and the visible of the product belows such as metal wire.The first insulation course 45 makes ITO electrode 15 and ITO through hole electrode 46 in insulation status, not conducting mutually; ITO electrode 15 comprises that capacitance plate drives (ITO electrode 1) 42 and induction electrode (ITO electrode 2) 43, has regular figure structure; Match with ITO shape of through holes.ITO through hole electrode plays ITO conducting effect, and conducting capacitance plate drives or induction line electrode, has regular figure structure; The number of through hole can be one or several, and through hole electrode mode has circular punching, oval punching, triangle punching, trapezoidal punching, the hole knockouts such as rectangle, object makes ITO through hole electrode contact more stable, more reliable with ITO electrode (containing ITO1 and ITO2 electrode).Described through hole is opened on the first insulation course (position that needs ITO through hole).。The flexible circuit board nation of ITO electrode signal conducting determines region and realizes by metal electrode 52.The second insulation course 44 protection metal electrodes 52 and ITO wire, make it and air insulation.
Its preparation technology is as follows:
The formation of silicon dioxide layer: through silicon dioxide plated film, make to form the silica coating of layer of transparent and even thickness on glass substrate, its thickness is selected respectively 0,50,100,300,400,700,1000 and 1500 Ethylmercurichlorendimides;
The formation of niobium pentaoxide layer: through niobium pentaoxide plated film, make to form the niobium pentaoxide rete of layer of transparent and even thickness on silicon dioxide film plating layer, its thickness is selected respectively 0,20,50,150,200,400,500 and 1000 Ethylmercurichlorendimides;
The formation of black resin layer: black resin is uniformly coated on to transparent glass substrate 41(11 through rotary coating mode or the formula coating method of scraping) on, coating thickness is 0.3 μ m ~ 5 μ m, pre-baked through well heater, exposure, develop, make it to form required black resin region; Be trapezium structure, interior thickness is 0.3 μ m ~ 5 μ m, its bevel angle is that between 6 ~ 60 degree, angle is mild, and object is that ITO electrode (drive wire ITO electrode 1 and line of induction ITO electrode 2) can be because difference in thickness causes greatly ITO lead rupture during by slope.Black resin region is the non-viewfinder area of display screen, and object is for blocking metal electrode.Described black resin be photonasty protective seam photoresist (commodity by Taiwan forever photochemistry produced EK410); it is a kind of black negativity photoresist; principal ingredient is: acrylic resin; epoxy resin; negative photosensitive agent; acetic acid propylene glycol monomethyl ether ester and black pigment, concrete ratio is resene: acetic acid propylene glycol monomethyl ether ester: black pigment and negative photosensitive agent=15 ~ 30:60 ~ 80:1 ~ 10.
Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.Pass through again black resin layer firmly roasting, condition be 200 degree to 300 degree, the time is half an hour to 3 hour, after above-mentioned processing procedure, finally forming thickness is 0.3 μ m ~ 5 μ m, the black resin layer of figure rule.
The formation of ITO electrode: transparent glass substrate is carried out chemical enhanced, then pass through ITO plated film, make to form the ITO rete of layer of transparent and even thickness on glass substrate, its thickness is 50 Ethylmercurichlorendimide ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 430 ohm); ITO material is comprised of In2O3 and SnO2, and its mass ratio is 85 ~ 95:5 ~ 15.The mode of ITO plated film has vacuum magnetic control sputter, chemical vapour deposition technique, hot evaporation, collosol and gel.
Through the transparent glass substrate of ITO plated film, at the uniform positivity photoresist of its ITO surface-coated a layer thickness, light blockage coating thickness is 1 μ m ~ 5 μ m; Positivity photoresist major component is acetic acid propylene glycol monomethyl ether ester, epoxy resin and positivity emulsion.Light blockage coating thickness is 1 μ m ~ 5 μ m.Coating photoresist mode has roller coating, spin coating, the modes such as blade coating.
Pre-baked through photoresistance through product after above-mentioned processing procedure, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 50 ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 430 ohm) and regular ITO pattern or electrode.Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.The liquid that ITO etching solution adopts hydrochloric acid and nitric acid to mix by a certain percentage, drops between 1 ~ 3 its sour pH value, etch temperature operation between 40 ~ 50 degree.De-photoresistance film liquid adopts dimethyl sulfoxide and monoethanolamine to mix according to a certain percentage, and number percent is 70%:30%, the operation between 40 ~ 80 degree of demoulding temperature.
Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2), has regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, separate, mutually insulated, vertical design.Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2) partial electrode can be overlapped on black resin top, and ITO electrode need be from the climbing of glass bottom to black resin top layer.
The formation of the first insulation course:
Transparent glass substrate after ITO electrode, at the uniform negativity photoresist of its ITO face coating a layer thickness, negativity photoresist major component is acetic acid propylene glycol monomethyl ether ester, acrylic resin, epoxy resin and negative photosensitive agent (commodity Taiwan by name Da Xing company produces POC A46), light blockage coating thickness is 0.5 μ m ~ 3 μ m; Coating photoresist mode has spin coating, the modes such as blade coating.
Described pattern perforate mode and quantity are the position of ITO through hole, and the regular figure of pattern, is respectively round hole, oval aperture, triangle perforate, trapezoidal perforate, the modes such as rectangle perforate.
Pre-baked through photoresistance through product after above-mentioned processing procedure, exposure, develops, and finally forming thickness is 0.5 ~ 3 μ m and regular insulating layer pattern.Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.Pass through again insulation course firmly roasting, condition be 200 degree to 300 degree, the time is half an hour to 3 hour, after above-mentioned processing procedure, finally forming thickness is 0.5 μ m ~ 3 μ m, the insulation course 1 of figure rule.
The formation of ITO through hole electrode layer:
Form the transparent glass substrate of the first insulation course, again pass through ITO plated film, make to form the ITO rete of layer of transparent and even thickness on glass substrate, its thickness is 50 Ethylmercurichlorendimide ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 430 ohm); ITO material is comprised of In2O3 and SnO2, and its mass ratio is 85 ~ 95:5 ~ 15.The mode of ITO plated film has vacuum magnetic control sputter, chemical vapour deposition technique, hot evaporation, collosol and gel.
Glass substrate through ITO plated film, at the uniform positivity photoresist of its ITO surface-coated a layer thickness, positivity photoresist major component is acetic acid propylene glycol monomethyl ether ester, epoxy resin and positivity emulsion (TR400 that commodity Taiwan by name Xin Yingcai company produces); Light blockage coating thickness is 1 μ m ~ 5 μ m.Coating photoresist mode has roller coating, spin coating, the modes such as blade coating.
Pre-baked through photoresistance through product after above-mentioned processing procedure, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 50 ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 430 ohm) and regular ITO pattern or electrode.Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.The liquid that ITO etching solution adopts hydrochloric acid and nitric acid to mix by a certain percentage, drops between 1 ~ 3 its sour pH value, etch temperature operation between 40 ~ 50 degree.De-photoresistance film liquid adopts dimethyl sulfoxide and monoethanolamine to mix according to a certain percentage, and number percent is 70%:30%, the operation between 40 ~ 80 degree of demoulding temperature.
Described ITO through hole electrode comprises through hole electrode 1 and the black resin layer edge through hole electrode 2 of display screen vision area, there is regular figure structure, the number of through hole can be one or several, through hole electrode mode has circular punching, oval punching, triangle punching, trapezoidal punching, the hole knockouts such as rectangle, object makes ITO through hole electrode contact more stable, more reliable with ITO electrode (containing ITO electrode 1 and ITO electrode 2).Through hole electrode 1 and through hole electrode 2 are at same layer, separate, mutually insulated.Described through hole is opened on the first insulation course (position that needs ITO through hole).
ITO through hole electrode 1 conduction mode: ITO electrode 1 is by the through hole electrode 1 upwards conducting of the first insulation course, at ITO through hole electrode 1 level connection joint passing through on the first insulation course, through hole electrode 1 by the first insulation course is conducting to ITO electrode 1 downwards again, makes ITO electrode 1 form capacitance plate and drives path.ITO electrode 2 direct formation of film at surfaces are on glass substrate, and single ITO electrode is connected, directly conducting.
ITO through hole electrode 2 conduction modes: film forming is passed through the through hole electrode 2 upwards conductings of the first insulation course at the ITO at black resin edge electrode (containing ITO electrode 1 and ITO electrode 2), through hole electrode 2 conducting that is connected with metal electrode again, make ITO electrode (containing ITO electrode 1 and ITO electrode 2) and metal electrode conducting, form capacitance plate function signal.
The formation of metal electrode layer:
Form the glass substrate of ITO electrode layer, then pass through metal coating, make to form the uniform metallic diaphragm of a layer thickness on glass substrate, its thickness is 500 Ethylmercurichlorendimide ~ 4000 Ethylmercurichlorendimides.Metallic diaphragm material is MoNb, AlNd, MoNb piles up the sandwich structure forming, thickness is in 50 Ethylmercurichlorendimide ~ 500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimide ~ 3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimide ~ 500 Ethylmercurichlorendimide ratios collocation, wherein in MoNb alloy material, Mo and Nb mass ratio are 85 ~ 95:5 ~ 15, and in AlNd alloy material, Al and Nd mass ratio are 95 ~ 98:2 ~ 5.Metal material type selecting also can be comprised of silver alloy or aldary, and composition combines by a certain percentage.Metal coating is vacuum magnetic control sputter.
Glass substrate through metal coating, at the uniform positivity photoresist of its metal surface coating a layer thickness, described positivity photoresist major component is acetic acid propylene glycol monomethyl ether ester, epoxy resin and positivity emulsion (TR400 that commodity Taiwan by name Xin Yingcai company produces), light blockage coating thickness is 1 μ m ~ 5 μ m.Coating photoresist mode has roller coating, spin coating, the modes such as blade coating.Pre-baked through photoresistance through product after above-mentioned processing procedure, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 500 ~ 4000 Ethylmercurichlorendimides and regular metal pattern or electrode.Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.The liquid that metal etch liquid adopts phosphoric acid, acetic acid and nitric acid to mix by a certain percentage, etch temperature operation between 40 ~ 50 degree.De-photoresistance film liquid adopts dimethyl sulfoxide and monoethanolamine to mix according to a certain percentage, and number percent is 70%:30%, the operation between 40 ~ 80 degree of demoulding temperature.
The formation of the second insulation course:
Glass substrate after metal electrode, at the uniform negativity photoresist of its metal face coating a layer thickness, negativity photoresist major component is acetic acid propylene glycol monomethyl ether ester, acrylic resin, epoxy resin and negative photosensitive agent (commodity Taiwan by name Da Xing company produces POC A46); Light blockage coating thickness is 0.5 μ m ~ 3 μ m.Coating photoresist mode has spin coating, the modes such as blade coating.
Pre-baked through photoresistance through product after above-mentioned processing procedure, exposure, develops, and finally forming thickness is 0.5 ~ 3 μ m and regular insulating layer pattern.Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.Pass through again insulation course firmly roasting, condition be 200 degree to 300 degree, the time is 0.5 hour to 3 hours, after above-mentioned processing procedure, finally forming thickness is 0.5 μ m ~ 3 μ m, the second insulation course of figure rule.
Along with the progress in epoch, electronic product is more and more emphasized quality, keeps on improving, and integrated touch screen is no exception.Consumer more and more favors high permeability, antiradar reflectivity, ITO pattern invisibility, the product that reliability is higher.Like this we are designed to integrated touch screen requirement more and more higher.
The present invention uses earth silicon material and niobium pentaoxide material, and reasonably combined its thickness (experimental result as shown in FIG. 6 and 7) filters out the suitable thickness of making touch-screen, makes it in the transmitance of product and the visibility of pattern, have significant lifting.Especially silicon dioxide film layer thickness is chosen between 100-1000 Ethylmercurichlorendimide, niobium pentaoxide thicknesses of layers is chosen between 50-500 Ethylmercurichlorendimide, there is extremely excellent effect, product transmitance can be stabilized in more than 93%, the grade of pattern visuality can be stabilized in 2 grades take interior (the visual hierarchical definition of pattern as: 0 grade-can't see completely, 10 grades very obviously visible, and the ITO pattern that progressively increases is successively more visual and obvious).
Earth silicon material has antireflection, alleviates the function of end shadow.Because the light in different polarization states is different with the variation of phase place after reflection in substrate interface and amplitude at rete and air and rete, so silicon dioxide layer can change polarization state after rete reflects, and can reduce product reflectivity, alleviates pattern visuality.Along with the increase of silica coating, the interference effect of rete can produce certain antireflective effect.The reflectivity of simple glass is about 5%, is coated with its reflectivity of glass about 2% of earth silicon material.The simple glass of ITO pattern is seen at a certain visual angle of human eye, can see significantly ITO pattern on glass.The glass that is coated with silicon dioxide of ITO pattern is seen at a certain visual angle of human eye, and it can not see ITO pattern on glass significantly.
If adopt the layer of cloth order of black resin layer, silicon dioxide layer, niobium pentaoxide layer, manufacturing process is adjusted into:
The formation of black resin layer: black resin is uniformly coated on transparency carrier through rotary coating mode or the formula coating method of scraping, and coating thickness is 0.3 μ m ~ 5 μ m, pre-baked through well heater, exposure, develops, and makes it to form required black resin region;
The formation of silicon dioxide layer: through silicon dioxide plated film, make to form the silica coating of layer of transparent and even thickness on black resin layer, its thickness is 100 ~ 1000 Ethylmercurichlorendimides;
The formation of niobium pentaoxide layer: through niobium pentaoxide plated film, make to form the niobium pentaoxide rete of layer of transparent and even thickness on silicon dioxide layer, its thickness is 50 ~ 500 Ethylmercurichlorendimides;
Remaining technique, does not need have ever made many adjustment.
Above content is in conjunction with concrete preferred implementation further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.For general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (9)
1. a novel I TO through hole integrated capacitive touch screen, it is characterized in that: comprise transparency carrier, stack gradually silicon dioxide layer, niobium pentaoxide layer, black resin layer, ITO electrode, the first insulation course, ITO through hole electrode, metal electrode and the second insulation course in transparency carrier; Described ITO electrode comprises ITO electrode 1 and ITO electrode 2, has regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, separate, mutually insulated, vertical design; Described transparency carrier comprises He Fei viewfinder area, viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen; Described metal electrode circuit wiring is only at black resin layer region; The thickness of described silicon dioxide layer is 100～1000 Ethylmercurichlorendimides, and the thickness of described niobium pentaoxide layer is 50～500 Ethylmercurichlorendimides; Described black resin layer is trapezium structure, and interior thickness is 0.3 μ m～5 μ m, and its bevel angle is that between 6～60 degree, angle is mild; Described black resin layer thickness is 0.3 μ m～5 μ m; ITO electrode layers thickness is 50～2000 Ethylmercurichlorendimides; The thickness of the first insulation course is 0.5～3 μ m; Described ITO through hole electrode thickness is 50 Ethylmercurichlorendimide～2000 Ethylmercurichlorendimides; The thickness of metal electrode layer is 500～4000 Ethylmercurichlorendimides; The second thickness of insulating layer is 0.5～3 μ m.
2. a novel I TO through hole integrated capacitive touch screen, it is characterized in that: comprise transparency carrier, stack gradually black resin layer, silicon dioxide layer, niobium pentaoxide layer, ITO electrode, the first insulation course, ITO through hole electrode, metal electrode and the second insulation course in transparency carrier; Described ITO electrode comprises ITO electrode 1 and ITO electrode 2, has regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, separate, mutually insulated, vertical design; Described transparency carrier comprises He Fei viewfinder area, viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen; Described metal electrode circuit wiring is only at black resin layer region; The thickness of described silicon dioxide layer is 100～1000 Ethylmercurichlorendimides, and the thickness of described niobium pentaoxide layer is 50～500 Ethylmercurichlorendimides; Described black resin layer is trapezium structure, and interior thickness is 0.3 μ m～5 μ m, and its bevel angle is that between 6～60 degree, angle is mild; Described black resin layer thickness is 0.3 μ m～5 μ m; ITO electrode layers thickness is 50～2000 Ethylmercurichlorendimides; The thickness of the first insulation course is 0.5～3 μ m; Described ITO through hole electrode thickness is 50 Ethylmercurichlorendimide～2000 Ethylmercurichlorendimides; The thickness of metal electrode layer is 500～4000 Ethylmercurichlorendimides; The second thickness of insulating layer is 0.5～3 μ m.
3. the novel I TO through hole integrated capacitive touch screen as described in claim 1 or 2, is characterized in that: described transparency carrier is that thickness is at chemically reinforced glass substrate or the resin material substrate of 0.5mm～2.0mm; The number of the through hole of described ITO through hole electrode can be one or several, and through hole electrode mode has circular punching, oval punching, triangle punching, trapezoidal punching, or rectangle punching.
4. novel I TO through hole integrated capacitive touch screen as claimed in claim 3, is characterized in that: the gold of described metal coating
Genus rete is MoNb, AlNd, MoNb piles up the sandwich structure forming, thickness is in 50 Ethylmercurichlorendimide～500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimide～3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimide～500 Ethylmercurichlorendimide ratios collocation, wherein in MoNb alloy material, Mo and Nb mass ratio are 85～95:5～15, and in AlNd alloy material, Al and Nd mass ratio are 95～98:2～5.
5. novel I TO through hole integrated capacitive touch screen as claimed in claim 4, is characterized in that: described ITO comprises In2O3 and SnO2, and its mass ratio is 85～95:5～15.
6. a method of preparing novel I TO through hole integrated capacitive touch screen, comprise step: the formation of silicon dioxide layer: through silicon dioxide plated film, make to form the silica coating of layer of transparent and even thickness on transparency carrier, its thickness is 100～1000 Ethylmercurichlorendimides; The formation of niobium pentaoxide layer: through niobium pentaoxide plated film, make to form the niobium pentaoxide rete of layer of transparent and even thickness on silicon dioxide layer, its thickness is 50～500 Ethylmercurichlorendimides; The formation of black resin layer: black resin is uniformly coated on transparency carrier through rotary coating mode or the formula coating method of scraping, and coating thickness is 0.3 μ m～5 μ m, pre-baked through well heater, exposure, develops, and makes it to form required black resin region; Described black resin is photonasty protective seam photoresist, and described photoresist comprises acrylic resin, epoxy resin, negative photosensitive agent, acetic acid propylene glycol monomethyl ether ester and black pigment; Its ratio is resene: acetic acid propylene glycol monomethyl ether ester: black pigment and negative photosensitive agent=15～30:60～80:1～10; Described black resin layer is trapezium structure, and interior thickness is 0.3 μ m～5 μ m, and its bevel angle is that between 6～60 degree, angle is mild; The formation of ITO electrode: transparency carrier is carried out chemical enhanced, then pass through ITO plated film, make to form the ITO rete of layer of transparent and even thickness on glass substrate, its thickness is 50 Ethylmercurichlorendimide～2000 Ethylmercurichlorendimides; Through the transparency carrier of ITO plated film, at the uniform positivity photoresist of its ITO surface-coated a layer thickness, light blockage coating thickness is 1 μ m～5 μ m; Pre-baked through photoresistance, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 50～2000 Ethylmercurichlorendimides and regular ITO pattern or electrode; Described ITO electrode comprises ITO electrode 1 and ITO electrode 2, has regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, separate, mutually insulated, vertical design; The formation of the first insulation course:
Transparency carrier after ITO electrode, at the uniform negativity photoresist of its ITO face coating a layer thickness, light blockage coating thickness is 0.5 μ m～3 μ m; Pre-baked through photoresistance, exposure, develops, and finally forming thickness is 0.5～3 μ m and regular insulating layer pattern; The formation of ITO through hole electrode: form the transparency carrier of the first insulation course, again pass through ITO plated film, make to form the ITO rete of layer of transparent and even thickness on glass substrate, its thickness is 50 Ethylmercurichlorendimide～2000 Ethylmercurichlorendimides; Through the transparency carrier of ITO plated film, at the uniform positivity photoresist of its ITO surface-coated a layer thickness, light blockage coating thickness is 1 μ m～5 μ m; Pre-baked through photoresistance, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 50～2000 Ethylmercurichlorendimides and regular ITO pattern or electrode; The formation of metal electrode layer: form the transparency carrier of ITO electrode layer, through metal coating, make it to form the uniform metallic diaphragm of a layer thickness on transparency carrier, its thickness is 500 Ethylmercurichlorendimide～4000 Ethylmercurichlorendimides; Through the transparency carrier of metal coating, at the uniform positivity photoresist of its metal surface coating a layer thickness, light blockage coating thickness is 1 μ m～5 μ m; Pre-baked through photoresistance, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 500～4000 Ethylmercurichlorendimides and regular metal pattern or electrode; The formation of the second insulation course: the transparency carrier after metal electrode, at the uniform negativity photoresist of its metal face coating a layer thickness, light blockage coating thickness is 0.5 μ m～3 μ m; Pre-baked through photoresistance, exposure, develops, and finally forming thickness is 0.5～3 μ m and regular insulating layer pattern.
7. a method of preparing novel I TO through hole integrated capacitive touch screen, comprise step: the formation of black resin layer: black resin is uniformly coated on transparency carrier through rotary coating mode or the formula coating method of scraping, coating thickness is 0.3 μ m～5 μ m, pre-baked through well heater, exposure, develop, make it to form required black resin region; Described black resin is photonasty protective seam photoresist, and described photoresist comprises acrylic resin, epoxy resin, and negative photosensitive agent,
Acetic acid propylene glycol monomethyl ether ester and black pigment; Its ratio is resene: acetic acid propylene glycol monomethyl ether ester: black pigment and negative photosensitive agent=15～30:60～80:1～10; Described black resin layer is trapezium structure, and interior thickness is 0.3 μ m～5 μ m, and its bevel angle is that between 6～60 degree, angle is mild; The formation of silicon dioxide layer: through silicon dioxide plated film, make to form the silica coating of layer of transparent and even thickness on black resin layer, its thickness is 100～1000 Ethylmercurichlorendimides; The formation of niobium pentaoxide layer: through niobium pentaoxide plated film, make to form the niobium pentaoxide rete of layer of transparent and even thickness on silicon dioxide layer, its thickness is 50～500 Ethylmercurichlorendimides; The formation of ITO electrode: transparency carrier is carried out chemical enhanced, then pass through ITO plated film, make to form the ITO rete of layer of transparent and even thickness on glass substrate, its thickness is 50 Ethylmercurichlorendimide～2000 Ethylmercurichlorendimides; Through the transparency carrier of ITO plated film, at the uniform positivity photoresist of its ITO surface-coated a layer thickness, light blockage coating thickness is 1 μ m～5 μ m; Pre-baked through photoresistance, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 50～2000 Ethylmercurichlorendimides and regular ITO pattern or electrode; Described ITO electrode comprises ITO electrode 1 and ITO electrode 2, has regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, separate, mutually insulated, vertical design; The formation of the first insulation course: the transparency carrier after ITO electrode, at the uniform negativity photoresist of its ITO face coating a layer thickness, light blockage coating thickness is 0.5 μ m～3 μ m; Pre-baked through photoresistance, exposure, develops, and finally forming thickness is 0.5～3 μ m and regular insulating layer pattern; The formation of ITO through hole electrode: form the transparency carrier of the first insulation course, again pass through ITO plated film, make to form the ITO rete of layer of transparent and even thickness on glass substrate, its thickness is 50 Ethylmercurichlorendimide～2000 Ethylmercurichlorendimides; Through the transparency carrier of ITO plated film, at the uniform positivity photoresist of its ITO surface-coated a layer thickness, light blockage coating thickness is 1 μ m～5 μ m; Pre-baked through photoresistance, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 50～2000 Ethylmercurichlorendimides and regular ITO figure
Case or electrode; The formation of metal electrode layer: form the transparency carrier of ITO electrode layer, through metal coating, make it to form the uniform metallic diaphragm of a layer thickness on transparency carrier, its thickness is 500 Ethylmercurichlorendimide～4000 Ethylmercurichlorendimides; Through the transparency carrier of metal coating, at the uniform positivity photoresist of its metal surface coating a layer thickness, light blockage coating thickness is 1 μ m～5 μ m; Pre-baked through photoresistance, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 500～4000 Ethylmercurichlorendimides and regular metal pattern or electrode; The formation of the second insulation course: the transparency carrier after metal electrode, at the uniform negativity photoresist of its metal face coating a layer thickness, light blockage coating thickness is 0.5 μ m～3 μ m; Pre-baked through photoresistance, exposure, develops, and finally forming thickness is 0.5～3 μ m and regular insulating layer pattern.
8. the method for preparing novel I TO through hole integrated capacitive touch screen as described in claim 6 or 7, is characterized in that: described transparency carrier is thickness at the chemically reinforced glass substrate of 0.5～2.0 millimeter; Described ITO comprises In2O3 and SnO2, and its mass ratio is 85～95:5～15.
9. the method for preparing novel I TO through hole integrated capacitive touch screen as claimed in claim 8, is characterized in that: described positivity photoresist major component is acetic acid propylene glycol monomethyl ether ester, epoxy resin and positivity emulsion; Negativity photoresist major component is acetic acid propylene glycol monomethyl ether ester, acrylic resin, epoxy resin and negative photosensitive agent; The metallic diaphragm of described metal coating is MoNb, AlNd, MoNb piles up the sandwich structure forming, thickness is in 50 Ethylmercurichlorendimide～500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimide～3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimide～500 Ethylmercurichlorendimide ratios collocation, wherein in MoNb alloy material, Mo and Nb mass ratio are 85～95:5～15, and in AlNd alloy material, Al and Nd mass ratio are 95～98:2～5; The mode of described ITO plated film is vacuum magnetic control sputter, or is chemical vapour deposition technique, or is hot evaporation, or is collosol and gel.
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| CN102298475A (en) * | 2011-08-16 | 2011-12-28 | 深圳市宝明科技股份有限公司 | Indium tin oxide (ITO) through hole integrated capacitive touch screen and production method thereof |
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| CN101475317A (en) * | 2009-02-13 | 2009-07-08 | 江苏津通先锋光电显示技术有限公司 | High transmittance conductive glass for touch screen and technique for producing the same |
| CN101898871A (en) * | 2009-05-25 | 2010-12-01 | 天津南玻节能玻璃有限公司 | Low-reflection plating glass and preparation method thereof |
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Address after: 518000 room 3001, building 2, Huilong business center, North Station community, Minzhi street, Longhua District, Shenzhen City, Guangdong Province Patentee after: SHENZHEN BAOMING TECHNOLOGY Ltd. Address before: 518000, District, Guangdong City, Baoan District Province, Guanlan Road, Niu Tai Lake paddy Industry Park, B District Patentee before: SHENZHEN BAOMING TECHNOLOGY Ltd. |