CN202711213U - Novel metal gap bridge integrated capacitive touch screen - Google Patents
Novel metal gap bridge integrated capacitive touch screen Download PDFInfo
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- CN202711213U CN202711213U CN 201220119832 CN201220119832U CN202711213U CN 202711213 U CN202711213 U CN 202711213U CN 201220119832 CN201220119832 CN 201220119832 CN 201220119832 U CN201220119832 U CN 201220119832U CN 202711213 U CN202711213 U CN 202711213U
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Abstract
The utility model discloses a novel metal gap bridge integrated capacitive touch screen which comprises a transparent base plate, a silica layer, a niobium pentoxide layer, a black resin layer, an indium tin oxide (ITO) electrode, a first insulation layer, a metal electrode, a metal gap bridge and a second insulation layer. The silica layer, the niobium pentoxide layer, the black resin layer, the ITO electrode, the first insulation layer, the metal electrode, the metal gap bridge and the second insulation layer are sequentially laminated on the transparent base plate. The whole surface of the silica layer is covered with glass. The whole surface of the niobium pentoxide layer covers the silica layer. The ITO electrode comprises a capacitive screen drive and an induction electrode, and has a regular graphic structure. The capacitive screen drive and the induction electrode are placed on the same layer face and are independent, isolated from each other and designed vertically. The transparent base plate comprises a window zone and a non-window zone, and the black resin layer is distributed on the non-window zone of a display screen. The laminated structure of the capacitive touch screen and a bridging conductive mode are designed reasonably, the transmittance of the capacitive touch screen is effectively improved, visuality of an ITO pattern is lowered, and the reliability of the touch screen is further improved.
Description
Technical field
The utility model relates to the capacitance touch screen technical field, especially relates to a kind of integrated capacitive touch screen by the metal-gap-bridge design.
Background technology
Along with the development of electronics technology, the keyboard of mobile phone, digital camera, handheld device, vehicle-carrying DVD, MP3, instrument etc. or mouse are touched gradually to shield and substitute at present.The product of touch-screen is not very burning hot several years ago, and more and more for the contact of touch screen product along with people, is approved by more people in nearly 2 years yet, and speed of development is accelerated gradually.Touch-screen is grown up rapidly, has not only evoked fiercer industry competition, has also indirectly promoted the development of technology, and the mode of operation of its multi-point touch has risen to a new height to the influence power of touch-screen product especially, is also paid close attention to by people gradually.
Touch-screen mainly forms by touching detection part and touch screen controller, touches detection part and is installed in the indicator screen front, for detection of user touch location, send touch screen controller after the reception; And the Main Function of touch screen controller is to receive touch information from touch point detection device, and converts it to contact coordinate, gives CPU again, and its can receive simultaneously the order that CPU sends and be carried out.
According to the principle of work of touch-screen and the medium of transmission information, touch-screen can be divided into four kinds, be respectively resistance-type, capacitor induction type, infrared-type and surface acoustic wave type, current what be widely used is resistive touch screen, and it utilizes pressure sensitive to carry out resistance control; Resistive touch screen is a kind of laminated film of multilayer, and its major part is a resistance film screen that cooperates very much with display surface.Resistance film screen is as basic unit with one deck glass or duroplasts flat board, the surface scribbles layer of transparent oxidized metal (transparent conductive resistance) ITO(tin indium oxide) conductive layer, the above is stamped the smooth anti-friction plastic layer of one deck outside surface cure process again, its inside surface also scribbles one deck ITO coating, between them, there is the transparent isolating points of many tiny (less than 1/1000 inches) that two conductive layers is separated insulation, when the finger touch screen, two conductive layers has just had contact in the position, touch point, resistance changes, produce signal at X and Y both direction, then send touch screen controller, controller detects this contact and calculates (X, Y) position, the mode according to analog mouse operates again.
The ultimate principle of capacitive touch screen is to utilize the electric current induction of human body to carry out work; capacitive touch screen is two layers of compound glass screen; the inside surface interlayer of glass screen scribbles the ITO(tin indium oxide) conducting film (plated film electro-conductive glass); outermost layer is skim silicon soil glassivation; the ITO coating is as workplace; draw four electrodes on four angles; when finger touch is on screen; because people's bulk electric field; user and touch screen surface form a coupling capacitance; for high-frequency current, electric capacity is direct conductor, so finger siphons away a very little electric current from contact point; this electric current flows out the electrode from four jiaos of touch-screen respectively; and the electric current of these four electrodes of flowing through is directly proportional with the distance of finger to four jiaos, and controller draws the position of touch point by the accurate Calculation to these four current ratios.
In capacitive touch screen, projection-type capacitive touch screen is that current application is a kind of comparatively widely, have simple in structure, the transmittance high.The touch sensible parts of projection-type capacitive touch screen are generally a plurality of column electrodes and the row electrode is staggered to form the induction matrix.Usually the design that adopts comprises the two sides that column electrode and row electrode is separately positioned on same transparency carrier, prevents from short circuit occurring at intervening portion; Perhaps column electrode and row electrode are arranged on the homonymy of same transparency carrier, be formed on the same conducting film (being generally the ITO conducting film), separate by the mode that insulation course and frame conducting bridge are set at column electrode and the staggered position of row electrode, column electrode and row electrode are separated and guarantee conducting on direction separately, can prevent effectively that it is in the intervening portion short circuit.
Usually the design proposal that adopts is: one of column electrode or row electrode arrange on conducting film continuously, then another electrode electrode take continuous setting on conducting film is arranged to some electrode blocks as the interval, position at cross-point is electrically connected adjacent electrode block by conducting bridge, thereby forms the continuous electrode on the other direction; Separated by insulation course between the electrode of conducting bridge and continuously setting, thereby effectively stop column electrode and row electrode in the cross-point short circuit.Usually the design proposal that adopts is: (1) stepped construction is followed successively by transparency carrier, first direction electrode, insulation course, conducting bridge; Perhaps (2) stepped construction is followed successively by transparency carrier, conducting bridge, insulation course, first direction electrode.
But can there be the defective of the not high and poor work stability of transmittance in the capacitive touch screen that adopts traditional design proposal, the capacitive touch screen transmittance of traditional design proposal is difficult to break through 80%, and during whole stressed flexural deformation, easily occur at the interface separating, cause electrode to open circuit and touch inefficacy, touch sensible parts damages.
The utility model content
The purpose of this utility model is to provide a kind of novel metal gap-bridge integrated capacitive touch screen, reasonably design by stepped construction and metal bridge formation conduction mode to capacitance touch screen, effectively improve the transmitance of capacitive touch screen, reduced the visuality of ITO pattern, the reliability of touch-screen further promotes.
For achieving the above object, the utility model adopts following technical scheme:
A kind of novel metal gap-bridge integrated capacitive touch screen comprises transparency carrier, stacks gradually silicon dioxide layer, niobium pentaoxide layer, black resin layer, ITO electrode, the first insulation course, metal electrode and metal-gap-bridge and the second insulation course in transparency carrier; Described silicon dioxide layer is whole covering transparency carrier, and the niobium pentaoxide layer is that whole face covers silicon dioxide layer; The ITO electrode comprises that capacitance plate drives and induction electrode, has the regular figure structure; Capacitance plate driving and induction electrode are in same aspect, and be separate, mutually insulated, vertical design; Described transparency carrier comprises viewfinder area and non-viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen; Described silicon dioxide layer thickness is 100 ~ 1000 Ethylmercurichlorendimides, and described niobium pentaoxide layer, its thickness are 50 ~ 500 Ethylmercurichlorendimides.
Described novel metal gap-bridge integrated capacitive touch screen, its stepped construction also can adopt: transparency carrier stacks gradually black resin layer, silicon dioxide layer, niobium pentaoxide layer, ITO electrode, the first insulation course, metal electrode and metal-gap-bridge and the second insulation course in transparency carrier; The ITO electrode comprises that capacitance plate drives and induction electrode, has the regular figure structure; Capacitance plate driving and induction electrode are in same aspect, and be separate, mutually insulated, vertical design; Described transparency carrier comprises viewfinder area and non-viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen; The degree of described silicon dioxide bed thickness is 100 ~ 1000 Ethylmercurichlorendimides, and the thickness of described niobium pentaoxide layer is 50 ~ 500 Ethylmercurichlorendimides.
The metallic diaphragm of metal coating is MoNb, AlNd, MoNb piles up the sandwich structure that forms, thickness is in 50 Ethylmercurichlorendimides ~ 500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimides ~ 3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimides ~ 500 Ethylmercurichlorendimide ratios collocation, wherein Mo and Nb mass ratio are 85 ~ 95:5 ~ 15 in the MoNb alloy material, and Al and Nd mass ratio are 95 ~ 98:2 ~ 5 in the AlNd alloy material.The metal material type selecting also can be comprised of silver alloy or aldary, and composition combines by a certain percentage.The metallic diaphragm plated film is the vacuum magnetic control sputter.
Preferably:
Chemically reinforced glass substrate or resin material substrate that described transparency carrier is thickness between 0.5 ~ 2.0 millimeter of thickness; Described ITO electrode regular texture is rhombus, or bar shaped, or box-shaped, or snowflake type, or the figure such as cross.
The black resin zone is trapezium structure, interior thickness is 0.3 μ m ~ 5 μ m, its bevel angle is that angle is mild between 6 ~ 60 degree, and purpose is that ITO electrode (drive wire ITO electrode 1 and line of induction ITO electrode 2) can be owing to difference in thickness causes greatly the ITO lead rupture during by the slope.Described black resin layer can effectively block the figure layer of non-visible area, can shading, and the visible of the products such as metal wire below.Metal electrode and metal-gap-bridge make the ITO electrode signal be conducting to the fixed zone of flexible circuit board nation, and metal-gap-bridge is the conducting function, makes ITO electrode a direction by the metal-gap-bridge conducting, has the regular figure structure.The first insulation course makes ITO a direction electrode and metal-gap-bridge electrode be in insulation status, mutually not conducting.The second dielectric protection layer protection metal electrode and metal-gap-bridge electrode make it and air insulation.
Utility model the utility model compared with prior art has following advantage and beneficial effect:
The utility model is by reasonably arranging stepped construction, finish touch function signal electrode and black resin overlayer at the layer of transparent substrate, optimize the mode of the order such as stacked metal-gap-bridge electrode layer and pattern, significantly promoted the yield of product, reduce cost, the improving product reliability.Between substrate thickness 0.5mm ~ 2.0mm, has thin thickness in the utility model, the advantage such as quality is light; By the appropriate design to each layer, effectively improve the transmitance of capacitive touch screen, reduced the visuality of ITO pattern, the reliability of touch-screen further promotes.
Description of drawings
Fig. 1 is the structural representation of metal-gap-bridge capacitance touch screen described in the utility model;
Fig. 2 is the described glass basal plate structure schematic diagram of the utility model embodiment;
Fig. 3 is the local structure for amplifying schematic diagram of metal-gap-bridge;
Fig. 4 is the metal-gap-bridge cross-sectional view;
Fig. 5 is the cross-sectional view of metal-gap-bridge electric capacity integrated touch screen described in the utility model;
Fig. 6 is embodiment product transmitance comparative test result figure;
Fig. 7 is the visual comparative test result figure of embodiment pattern.
Embodiment
Below in conjunction with specific embodiment the utility model is described in further detail.
As shown in Figures 1 and 2, described metal-gap-bridge capacitance touch screen, comprise the chemically reinforced glass substrate 11 of thickness between 0.5mm ~ 2.0mm, stack gradually silicon dioxide layer 12, niobium pentaoxide layer 13, black resin layer 14, ITO electrode 15, the first insulation course 16, metal electrode and metal-gap-bridge 17 and the second insulation course 18 in transparency carrier; Described ITO electrode comprises that capacitance plate drives and induction electrode, has the regular figure structure; Capacitance plate driving and induction electrode are in same aspect, and be separate, mutually insulated, vertical design.Transparency carrier comprises viewfinder area and non-viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen.
Find by research, in the present embodiment, the stepped construction order of described silicon dioxide layer 12, niobium pentaoxide layer 13, black resin layer 14 can replace with the order of black resin layer, silicon dioxide layer, niobium pentaoxide layer, can reach the purpose that the utility model will reach equally.Black resin layer can effectively block the figure layer of non-visible area, can shading, and the visible of the products such as metal wire below.
Fig. 3 is to the partial structurtes enlarged diagram or the cross-sectional view that Figure 5 shows that the described ITO gap bridge of the present embodiment capacitance touch screen: ITO electrode 15 comprises drive wire (ITO electrode 1) 44 and the line of induction (ITO electrode 2) 45; Metal electrode and metal-gap-bridge 47 make the ITO electrode signal be conducting to the flexible circuit board zone, and metal-gap-bridge is the conducting function, make ITO electrode a direction by the metal-gap-bridge conducting, have the regular figure structure.The first insulation course 46 makes ITO a direction electrode and metal-gap-bridge electrode be in insulation status, mutually not conducting.The second insulation course 48 protection protection metal electrode and metal-gap-bridge electrodes 47 make it and air insulation.
Its preparation technology is as follows:
The formation of silicon dioxide layer: through the silicon dioxide plated film, make the silica coating that forms layer of transparent and even thickness at glass substrate, its thickness is selected respectively 0,50,100,300,400,700,1000 and 1500 Ethylmercurichlorendimides;
The formation of niobium pentaoxide layer: through the niobium pentaoxide plated film, make the niobium pentaoxide rete that forms layer of transparent and even thickness at the silicon dioxide film plating layer, its thickness is selected respectively 0,20,50,150,200,400,500 and 1000 Ethylmercurichlorendimides;
The formation of black resin layer: black resin is uniformly coated on the niobium pentaoxide plated film through rotary coating mode or the formula coating method of scraping, coating thickness is 0.3 μ m ~ 5 μ m, and is pre-baked through well heater, exposure, develop, make it to form required black resin zone;
Black resin is uniformly coated on transparent glass substrate 41(11 through rotary coating mode or the formula coating method of scraping) on, coating thickness is 0.3 μ m ~ 5 μ m, and is pre-baked through well heater, exposure is developed, and makes it to form required black resin zone; The black resin zone is trapezium structure, interior thickness is 0.3 μ m ~ 5 μ m, its bevel angle is that angle is mild between 6 ~ 60 degree, and purpose is that ITO electrode (ITO electrode 1 and ITO electrode 2) can be owing to difference in thickness causes greatly the ITO lead rupture during by the slope.The black resin zone is the non-viewfinder area of display screen, and purpose is for blocking metal electrode; Described black resin be photonasty protective seam photoresist (commodity by Taiwan forever photochemistry produced EK410); it is a kind of black negativity photoresist; principal ingredient is: the acrylic resin; epoxy resin; the negative photosensitive agent; acetic acid propylene glycol monomethyl ether ester and black pigment, concrete ratio is resene: acetic acid propylene glycol monomethyl ether ester: black pigment and negative photosensitive agent=15 ~ 30:60 ~ 80:1 ~ 10.
Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.Pass through again black resin layer firmly roasting, condition be 200 degree to 300 degree, the time is half an hour to 3 hour, through behind the above-mentioned processing procedure, finally forming thickness is 0.3 μ m ~ 5 μ m, the black resin layer 51 of figure rule.
The formation of ITO electrode layer:
Form the transparency carrier of black resin layer, through the ITO plated film, make the ITO rete that forms layer of transparent and even thickness at glass substrate, its thickness is 50 ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 430 ohm); The ITO material is comprised of In2O3 and SnO2, and its mass ratio is 85 ~ 95:5 ~ 15.The mode of ITO plated film has the vacuum magnetic control sputter, chemical vapour deposition technique, hot evaporation, collosol and gel.
Through the glass substrate of ITO plated film, at the uniform positivity photoresist of its ITO surface-coated a layer thickness, positivity photoresist major component is acetic acid propylene glycol monomethyl ether ester, epoxy resin and photosensitive material; Light blockage coating thickness is 1 μ m ~ 5 μ m.Coating photoresist mode has roller coating, spin coating, the modes such as blade coating.
Pre-baked through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 50 ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 430 ohm) and regular ITO pattern or electrode.Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.The liquid that the ITO etching solution adopts hydrochloric acid and nitric acid to mix by a certain percentage drops between 1 ~ 3 its sour pH value, etch temperature operation between 40 ~ 50 degree.Take off photoresistance film liquid and adopt dimethyl sulfoxide and monoethanolamine to mix according to a certain percentage, number percent is 70%:30%, the operation between 40 ~ 80 degree of demoulding temperature.
Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2), has the regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, and be separate, mutually insulated, vertical design.
1 conducting of ITO electrode is to overlap up and down by the metal-gap-bridge electrode, climbs to the top in the bottom of metal-gap-bridge electrode by the first insulation course, from the top of the first insulation course to the decline of bottom, connects ITO electrode 1 again, drives path so that ITO electrode 1 forms; The conducting of ITO electrode 2 is that self ITO communicates, and makes ITO electrode 2 form the induction paths.
The formation of the first insulation course:
Through the transparency carrier behind the ITO electrode, at the uniform negativity photoresist of its ITO face coating a layer thickness, negativity photoresist major component is acetic acid propylene glycol monomethyl ether ester, the acrylic resin, epoxy resin and negative photosensitive agent, light blockage coating thickness are 0.5 μ m ~ 3 μ m; Coating negativity photoresist mode has spin coating, the modes such as blade coating.
Pre-baked through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and finally forming thickness is the insulating layer pattern of 0.5 ~ 3 μ m and rule.Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.Pass through again insulation course firmly roasting, condition be 200 degree to 300 degree, the time is half an hour to 3 hour, through behind the above-mentioned processing procedure, finally forming thickness is 0.5 μ m ~ 3 μ m, the first insulation course of figure rule.
The formation of metal electrode layer and metal-gap-bridge:
Form the transparency carrier of insulation course, pass through metal coating again, make at glass substrate and form the uniform metallic diaphragm of a layer thickness, its thickness is 500 Ethylmercurichlorendimides ~ 4000 Ethylmercurichlorendimides.The metallic diaphragm material is MoNb, AlNd, MoNb piles up the sandwich structure that forms, thickness is in 50 Ethylmercurichlorendimides ~ 500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimides ~ 3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimides ~ 500 Ethylmercurichlorendimide ratios collocation, wherein Mo and Nb mass ratio are 85 ~ 95:5 ~ 15 in the MoNb alloy material, and Al and Nd mass ratio are 95 ~ 98:2 ~ 5 in the AlNd alloy material.The metal material type selecting also can be comprised of silver alloy or aldary, and composition combines by a certain percentage.Metal coating is the vacuum magnetic control sputter.
Through the glass substrate of metal coating, at the uniform positivity photoresist of its metal surface coating a layer thickness, the photoresist major component is acetic acid propylene glycol monomethyl ether ester, epoxy resin, positivity emulsion.Light blockage coating thickness is 1 μ m ~ 5 μ m.Coating photoresist mode has roller coating, spin coating, the modes such as blade coating.Pre-baked through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 500 ~ 4000A and regular metal pattern or electrode.Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.The liquid that metal etch liquid adopts phosphoric acid, acetic acid and nitric acid to mix by a certain percentage, etch temperature operation between 40 ~ 50 degree.Take off photoresistance film liquid and adopt dimethyl sulfoxide and monoethanolamine to mix according to a certain percentage, number percent is 70%:30%, the operation between 40 ~ 80 degree of demoulding temperature.
The formation of the second insulation course:
Through the glass substrate behind the metal electrode, at the uniform negativity photoresist of its metal face coating a layer thickness,
Negativity photoresist major component is acetic acid propylene glycol monomethyl ether ester, acrylic resin, epoxy resin and negative photosensitive agent; Light blockage coating thickness is 0.5 μ m ~ 3 μ m.Coating negativity photoresist mode has spin coating, the modes such as blade coating.
Pre-baked through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and finally forming thickness is the insulating layer pattern of 0.5 ~ 3 μ m and rule.Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.Pass through again insulation course firmly roasting, condition be 200 degree to 300 degree, the time is 0.5 hour to 3 hours, through behind the above-mentioned processing procedure, finally forming thickness is 0.5 μ m ~ 3 μ m, the second insulation course of figure rule.
Along with the progress in epoch, electronic product is more and more emphasized quality, keeps on improving, and integrated touch screen is no exception.The consumer more and more favors high permeability, antiradar reflectivity, ITO pattern invisibility, the product that reliability is higher.Like this we are designed the integrated touch screen requirement more and more higher.
The utility model uses earth silicon material and niobium pentaoxide material, and reasonably combined its thickness (experimental result such as Figure 6 and Figure 7) filters out the suitable thickness of making touch-screen, makes it in the transmitance of product and the visibility of pattern significant lifting arranged.Especially the silicon dioxide film layer thickness is chosen between the 100-1000 Ethylmercurichlorendimide, the niobium pentaoxide thicknesses of layers is chosen between the 50-500 Ethylmercurichlorendimide, extremely excellent effect is arranged, the product transmitance can be stabilized in more than 93%, the grade of pattern visuality can be stabilized in 2 grades take interior (the visual hierarchical definition of pattern as: 0 grade-can't see fully, 10 grades very obviously as seen, and the ITO pattern that progressively increases successively is more visual and obvious).
Earth silicon material has antireflection, alleviates the function of end shadow.Because different in the variation of phase place and amplitude after rete and air and rete and substrate interface reflection of the light of different polarization states, so silicon dioxide layer changes polarization state after can reflecting through rete, can reduce the product reflectivity, alleviates the pattern visuality.Along with the increase of silica coating, the interference effect of rete can produce certain antireflective effect.The reflectivity of simple glass is about 5%, is coated with its reflectivity of glass about 2% of earth silicon material.The simple glass of ITO pattern is seen at a certain visual angle of human eye, can see significantly ITO pattern on glass.The glass that is coated with silicon dioxide of ITO pattern is seen at a certain visual angle of human eye, and it can not see ITO pattern on glass significantly.
If adopt the layer of cloth order of black resin layer, silicon dioxide layer, niobium pentaoxide layer, manufacturing process then is adjusted into:
The formation of black resin layer: black resin is uniformly coated on the transparency carrier through rotary coating mode or the formula coating method of scraping, and coating thickness is 0.3 μ m ~ 5 μ m, and is pre-baked through well heater, and exposure is developed, and makes it to form required black resin zone;
The formation of silicon dioxide layer: through the silicon dioxide plated film, make the silica coating that forms layer of transparent and even thickness at black resin layer, its thickness is 100 ~ 1000 Ethylmercurichlorendimides;
The formation of niobium pentaoxide layer: through the niobium pentaoxide plated film, make the niobium pentaoxide rete that forms layer of transparent and even thickness at silicon dioxide layer, its thickness is 50 ~ 500 Ethylmercurichlorendimides;
Remaining technique does not need have ever made many adjustment.
Above content is in conjunction with concrete preferred implementation further detailed description of the utility model, can not assert that implementation of the present utility model is confined to these explanations.For the utility model person of an ordinary skill in the technical field, without departing from the concept of the premise utility, can also make some simple deduction or replace, all should be considered as belonging to protection domain of the present utility model.
Claims (6)
1. novel metal gap-bridge integrated capacitive touch screen, it is characterized in that: comprise transparency carrier, stack gradually silicon dioxide layer, niobium pentaoxide layer, black resin layer, ITO electrode, the first insulation course, metal electrode and metal-gap-bridge and the second insulation course in transparency carrier; The ITO electrode comprises that capacitance plate drives and induction electrode; Capacitance plate driving and induction electrode are in same aspect, and be separate, mutually insulated, vertical design; Described transparency carrier comprises viewfinder area and non-viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen; The degree of described silicon dioxide bed thickness is 100～1000 Ethylmercurichlorendimides, and the thickness of described niobium pentaoxide layer is 50～500 Ethylmercurichlorendimides.
2. novel metal gap-bridge integrated capacitive touch screen, it is characterized in that: comprise transparency carrier, stack gradually black resin layer, silicon dioxide layer, niobium pentaoxide layer, ITO electrode, the first insulation course, metal electrode and metal-gap-bridge and the second insulation course in transparency carrier; The ITO electrode comprises that capacitance plate drives and induction electrode; Capacitance plate driving and induction electrode are in same aspect, and be separate, mutually insulated, vertical design; Described transparency carrier comprises viewfinder area and non-viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen; The degree of described silicon dioxide bed thickness is 100～1000 Ethylmercurichlorendimides, and the thickness of described niobium pentaoxide layer is 50～500 Ethylmercurichlorendimides.
3. such as claim 1 or 2 described novel metal gap-bridge integrated capacitive touch screens, it is characterized in that: described transparency carrier is that thickness is at chemically reinforced glass substrate or the resin material substrate of 0.5mm～2.0mm; Described ITO electrode regular texture is rhombus, or bar shaped, or box-shaped, or cross.
4. novel metal gap-bridge integrated capacitive touch screen as claimed in claim 3, it is characterized in that: described black resin layer thickness is 0.3 μ m～5 μ m; The ITO electrode layers thickness is 50～2000 Ethylmercurichlorendimides; The thickness of the first insulation course is 0.5～3 μ m; Metal electrode and metal-gap-bridge thickness are 500 Ethylmercurichlorendimides～4000 Ethylmercurichlorendimides; The second thickness of insulating layer is 0.5～3 μ m.
5. novel metal gap-bridge integrated capacitive touch screen as claimed in claim 4, it is characterized in that: the metallic diaphragm of described metal coating is MoNb, AlNd, MoNb piles up the sandwich structure that forms, three's thickness is in 50 Ethylmercurichlorendimides～500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimides～3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimides～500 Ethylmercurichlorendimide ratios collocation, wherein Mo and Nb mass ratio are 85～95:5～15 in the MoNb alloy material, and Al and Nd mass ratio are 95～98:2～5 in the AlNd alloy material.
6. novel metal gap-bridge integrated capacitive touch screen as claimed in claim 5, it is characterized in that: described ITO comprises In
2O
3And SnO
2, its mass ratio is 85～95:5～15.
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| CN 201220119832 CN202711213U (en) | 2012-03-27 | 2012-03-27 | Novel metal gap bridge integrated capacitive touch screen |
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| CN 201220119832 CN202711213U (en) | 2012-03-27 | 2012-03-27 | Novel metal gap bridge integrated capacitive touch screen |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104156104A (en) * | 2013-05-13 | 2014-11-19 | 胜华科技股份有限公司 | Touch panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104156104A (en) * | 2013-05-13 | 2014-11-19 | 胜华科技股份有限公司 | Touch panel |
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