CN202711212U - Novel non-metallic electrode layer non-overlapping one-piece capacitive touch screen - Google Patents
Novel non-metallic electrode layer non-overlapping one-piece capacitive touch screen Download PDFInfo
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- CN202711212U CN202711212U CN 201220119827 CN201220119827U CN202711212U CN 202711212 U CN202711212 U CN 202711212U CN 201220119827 CN201220119827 CN 201220119827 CN 201220119827 U CN201220119827 U CN 201220119827U CN 202711212 U CN202711212 U CN 202711212U
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Abstract
The utility model discloses a novel non-metallic electrode layer non-overlapping one-piece capacitive touch screen, comprising a transparent substrate, a silicon dioxide layer, a niobium pentoxide layer, a black resin layer, an ITO electrode and an insulating layer with the latter five being laminated on the transparent substrate in order. The silicon dioxide layer completely covers a glass, and the niobium pentoxide layer completely covers the silicon dioxide layer. The ITO electrode is a horizontal or vertical conduction electrode having a structure of a regular pattern. The ITO electrode is composed of an ITO conduction electrode 1 and an ITO conduction electrode 2, which are staggerly disposed on the same level, independent and insulative to each other. The novel non-metallic electrode layer non-overlapping one-piece capacitive touch screen is advantageous in that through a reasonable design of the conducting mode of the laminating structure of the capacitive touch screen, transmitance of the capacitive touch screen can be effectively increased, visibility of ITO patterns can be reduced, and reliability of the touch screen can be further raised.
Description
Technical field
The utility model relates to the capacitance touch screen technical field, especially relates to a kind of non-overlapping integrated capacitive touch screen of Novel non-metal electrode layer.
Background technology
Along with the development of electronics technology, the keyboard of mobile phone, digital camera, handheld device, vehicle-carrying DVD, MP3, instrument etc. or mouse are touched gradually to shield and substitute at present.The product of touch-screen is not very burning hot several years ago, and more and more for the contact of touch screen product along with people, is approved that speed of development was accelerated gradually in nearly 2 years by more people yet.Touch-screen is grown up rapidly, has not only evoked fiercer industry competition, has also indirectly promoted the development of technology, and the mode of operation of its multi-point touch has risen to a new height to the influence power of touch-screen product especially, is also paid close attention to by people gradually.
Touch-screen mainly forms by touching detection part and touch screen controller, touches detection part and is installed in the indicator screen front, for detection of user touch location, send touch screen controller after the reception; And the Main Function of touch screen controller is to receive touch information from touch point detection device, and converts it to contact coordinate, gives CPU again, and its can receive simultaneously the order that CPU sends and be carried out.
According to the principle of work of touch-screen and the medium of transmission information, touch-screen can be divided into four kinds, be respectively resistance-type, capacitor induction type, infrared-type and surface acoustic wave type, current what be widely used is resistive touch screen, and it utilizes pressure sensitive to carry out resistance control; Resistive touch screen is a kind of laminated film of multilayer, and its major part is a resistance film screen that cooperates very much with display surface.Resistance film screen is as basic unit with one deck glass or duroplasts flat board, the surface scribbles layer of transparent oxidized metal (transparent conductive resistance) ITO(tin indium oxide) conductive layer, the above is stamped the smooth anti-friction plastic layer of one deck outside surface cure process again, its inside surface also scribbles one deck ITO coating, between them, there is the transparent isolating points of many tiny (less than 1/1000 inches) that two conductive layers is separated insulation, when the finger touch screen, two conductive layers has just had contact in the position, touch point, resistance changes, produce signal at X and Y both direction, then send touch screen controller, controller detects this contact and calculates (X, Y) position, the mode according to analog mouse operates again.
The ultimate principle of capacitive touch screen is to utilize the electric current induction of human body to carry out work; capacitive touch screen is two layers of compound glass screen; the inside surface interlayer of glass screen scribbles the ITO(tin indium oxide) conducting film (plated film electro-conductive glass); outermost layer is skim silicon soil glassivation; the ITO coating is as workplace; draw four electrodes on four angles; when finger touch is on screen; because people's bulk electric field; user and touch screen surface form a coupling capacitance; for high-frequency current, electric capacity is direct conductor, so finger siphons away a very little electric current from contact point; this electric current flows out the electrode from four jiaos of touch-screen respectively; and the electric current of these four electrodes of flowing through is directly proportional with the distance of finger to four jiaos, and controller draws the position of touch point by the accurate Calculation to these four current ratios.
In capacitive touch screen, projection-type capacitive touch screen is that current application is a kind of comparatively widely, have simple in structure, the transmittance high.The touch sensible parts of projection-type capacitive touch screen are generally a plurality of column electrodes and the row electrode is staggered to form the induction matrix.Usually the design that adopts comprises the two sides that column electrode and row electrode is separately positioned on same transparency carrier, prevents from short circuit occurring at intervening portion; Perhaps column electrode and row electrode are arranged on the homonymy of same transparency carrier, be formed on the same conducting film (being generally the ITO conducting film), separate by the mode that insulation course and frame conducting bridge are set at column electrode and the staggered position of row electrode, column electrode and row electrode are separated and guarantee conducting on direction separately, can prevent effectively that it is in the intervening portion short circuit.
Usually the design proposal that adopts is: one of column electrode or row electrode arrange on conducting film continuously, then another electrode electrode take continuous setting on conducting film is arranged to some electrode blocks as the interval, position at cross-point is electrically connected adjacent electrode block by conducting bridge, thereby forms the continuous electrode on the other direction; Separated by insulation course between the electrode of conducting bridge and continuously setting, thereby effectively stop column electrode and row electrode in the cross-point short circuit.Usually the design proposal that adopts is: (1) stepped construction is followed successively by transparency carrier, first direction electrode, insulation course, conducting bridge; Perhaps (2) stepped construction is followed successively by transparency carrier, conducting bridge, insulation course, first direction electrode.
But can there be the defective of the not high and poor work stability of transmittance in the capacitive touch screen that adopts traditional design proposal, the capacitive touch screen transmittance of traditional design proposal is difficult to break through 80%, and during whole stressed flexural deformation, occur at the interface easily separating, cause electrode to open circuit and touch inefficacy, touch sensible parts damages.
The utility model content
The purpose of this utility model is to provide a kind of non-overlapping integrated capacitive touch screen of Novel non-metal electrode layer, reasonably design by stepped construction and conduction mode to capacitance touch screen, effectively improve the transmitance of capacitive touch screen, reduced the visuality of ITO pattern, the reliability of touch-screen further promotes.
For achieving the above object, the utility model adopts following technical scheme:
The non-overlapping integrated capacitive touch screen of a kind of Novel non-metal electrode layer is characterized in that: comprise transparency carrier, stack gradually silicon dioxide layer, niobium pentaoxide layer, black resin layer, ITO electrode, insulation course in transparency carrier; Described ITO electrode is horizontal direction or vertical direction conduction electrode, has the regular figure structure; The ITO electrode is that ITO conduction electrode 1 forms with ITO conduction electrode 2, and ITO conduction electrode 1 and ITO conduction electrode 2 are in same aspect, and be separate, mutually insulated, staggered designs; Described transparency carrier comprises viewfinder area and non-viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen.The degree of described silicon dioxide bed thickness is 100 ~ 1000 Ethylmercurichlorendimides, and the thickness of described niobium pentaoxide layer is 50 ~ 500 Ethylmercurichlorendimides.
The non-overlapping integrated capacitive touch screen of described a kind of Novel non-metal electrode layer, its stepped construction also can adopt: comprise transparency carrier, stack gradually black resin layer, silicon dioxide layer, niobium pentaoxide layer, ITO electrode, insulation course in transparency carrier; Described ITO electrode is horizontal direction or vertical direction conduction electrode, has the regular figure structure; The ITO electrode is that ITO conduction electrode 1 forms with ITO conduction electrode 2, and ITO conduction electrode 1 and ITO conduction electrode 2 are in same aspect, and be separate, mutually insulated, staggered designs; Described transparency carrier comprises viewfinder area and non-viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen.The degree of described silicon dioxide bed thickness is 100 ~ 1000 Ethylmercurichlorendimides, and the thickness of described niobium pentaoxide layer is 50 ~ 500 Ethylmercurichlorendimides.
Non-overlapping integrated touch screen structurally with on the production technology is all simplified to some extent, has reduced and the traditional needed gap bridge of bridging type integral type capacitance plate or via process, has reduced production cost and has shortened the explained hereafter time.The achieved touch manner of non-overlapping integrated touch screen is single-point touches and gesture identification, and the achieved mode of bridging type integral type (gap bridge mode and through hole mode) is multiple point touching (more than 2) and gesture identification.
Non-overlapping integrated capacitive touch screen and non-overlapping integrated touch screen without metal electrode layer structurally with on the production technology are all simplified to some extent, cancelled metal electrode, reduce material cost, reduced upper runoff yield journey, on touch function, all can realize single-point touches and gesture identification.
Without the non-overlapping integrated capacitive touch screen of metal electrode layer because without metal electrode, the maximum value of its ITO electric conduction pole-face resistance hinders much smaller than non-overlapping integrated touch screen ito surface.
Preferably:
Chemically reinforced glass substrate or resin material substrate that described transparency carrier is thickness between 0.5 ~ 2.0 millimeter of thickness; Described ITO electrode regular texture is triangle, or bar shaped, or oval.
The black resin zone is trapezium structure, interior thickness is 0.3 μ m ~ 5 μ m, its bevel angle is that angle is mild between 6 ~ 60 degree, and purpose is that ITO electrode (ITO conduction electrode 1 with ITO conduction electrode 2) can be owing to difference in thickness causes greatly the ITO lead rupture during by the slope.Described black resin layer can effectively block the figure layer of non-visible area, can shading, and the visible of the products such as wire below.Dielectric protection layer protection ITO electrode makes it and air insulation.
Utility model the utility model compared with prior art has following advantage and beneficial effect:
The utility model is finished touch function signal electrode and black resin overlayer by stepped construction is reasonably arranged at the layer of transparent substrate, has significantly promoted the yield of product, reduces cost, the improving product reliability.Between substrate thickness 0.5mm ~ 2.0mm, has thin thickness in the utility model, the advantage such as quality is light; By the appropriate design to each layer, effectively improve the transmitance of capacitive touch screen, reduced the visuality of ITO pattern, the reliability of touch-screen further promotes.
Non-overlapping integrated capacitive touch screen and non-overlapping integrated touch screen without metal electrode layer in the utility model structurally with on the production technology are all simplified to some extent, cancelled metal electrode, reduced material cost, reduce upper runoff yield journey, on touch function, all can realize single-point touches and gesture identification.
Description of drawings
Fig. 1 is the structural representation of capacitance touch screen described in the utility model;
Fig. 2 is the described glass basal plate structure synoptic diagram of the utility model embodiment;
Fig. 3 is local structure for amplifying synoptic diagram;
Fig. 4 is cross-sectional view;
Fig. 5 is the cross-sectional view of the non-overlapping integrated capacitive touch screen of Novel non-metal electrode layer described in the utility model;
Fig. 6 is embodiment product transmitance comparative test result figure;
Fig. 7 is the visual comparative test result figure of embodiment pattern.
Embodiment
Below in conjunction with specific embodiment the utility model is described in further detail.
As shown in Figures 1 and 2, described non-overlapping integrated capacitive touch screen capacitance touch screen without metal electrode layer, comprise chemically reinforced glass substrate or the resin material substrate 11 of thickness between 0.5mm ~ 2.0mm, stack gradually silicon dioxide layer 12, niobium pentaoxide layer 13, black resin layer 14, ITO electrode 15, insulation course 16 in transparency carrier; Described ITO electrode is horizontal direction or vertical direction conduction electrode, has the regular figure structure; The ITO electrode is that ITO conduction electrode 1 forms with ITO conduction electrode 2, and ITO conduction electrode 1 and ITO conduction electrode 2 are in same aspect, and be separate, mutually insulated, staggered designs.Transparency carrier comprises viewfinder area and non-viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen.
Black resin layer can effectively block the figure layer of non-visible area, can shading, and the visible of the products such as metal wire below.
Fig. 3 is to the partial structurtes enlarged diagram or the cross-sectional view that Figure 5 shows that the described capacitance touch screen of present embodiment: ITO electrode 13 comprises ITO conduction electrode 1 42 and ITO conduction electrode 2 43; The edge cabling of insulation course 45 protection protection ITO conduction electrodes 1 42 and ITO conduction electrode 2 43 makes it and air insulation.
Its preparation technology is as follows:
The formation of silicon dioxide layer: through the silicon dioxide plated film, make the silica coating that forms layer of transparent and even thickness at glass substrate, its thickness is selected respectively 0,50,100,300,400,700,1000 and 1500 Ethylmercurichlorendimides;
The formation of niobium pentaoxide layer: through the niobium pentaoxide plated film, make the niobium pentaoxide rete that forms layer of transparent and even thickness at the silicon dioxide film plating layer, its thickness is selected respectively 0,20,50,150,200,400,500 and 1000 Ethylmercurichlorendimides;
The formation of black resin layer: black resin is uniformly coated on the transparency carrier through rotary coating mode or the formula coating method of scraping, and coating thickness is 0.3 μ m ~ 5 μ m, and is pre-baked through well heater, and exposure is developed, and makes it to form required black resin zone;
Black resin is uniformly coated on transparent glass substrate 41(11 through rotary coating mode or the formula coating method of scraping) on, coating thickness is 0.3 μ m ~ 5 μ m, and is pre-baked through well heater, exposure is developed, and makes it to form required black resin zone; The black resin zone is trapezium structure, interior thickness is 0.3 μ m ~ 5 μ m, its bevel angle is that angle is mild between 6 ~ 60 degree, and purpose is that ITO electrode (ITO conduction electrode 1 and ITO conduction electrode 2) can be owing to difference in thickness causes greatly the ITO lead rupture during by the slope.The black resin zone is the non-viewfinder area of display screen, and purpose is for blocking metal electrode; Described black resin be photonasty protective seam photoresist (commodity by Taiwan forever photochemistry produced EK410); it is a kind of black negativity photoresist; principal ingredient is: the acrylic resin; epoxy resin; the negative photosensitive agent; acetic acid propylene glycol monomethyl ether ester and black pigment, concrete ratio is resene: acetic acid propylene glycol monomethyl ether ester: black pigment and negative photosensitive agent=15 ~ 30:60 ~ 80:1 ~ 10.
Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.It is firmly roasting to pass through black resin layer again, condition be 200 degree to 300 degree, the time is half an hour to 3 hour, through behind the above-mentioned processing procedure, finally forming thickness is 0.3 μ m ~ 5 μ m, the black resin layer 51 of figure rule.
The formation of ITO electrode layer:
Form the transparency carrier of black resin layer, through the ITO plated film, make the ITO rete that forms layer of transparent and even thickness at substrate, its thickness is 80 ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 270 ohm); The ITO material is comprised of In2O3 and SnO2, and its mass ratio is 85 ~ 95:5 ~ 15.The mode of ITO plated film has the vacuum magnetic control sputter, chemical vapour deposition technique, hot evaporation, collosol and gel.
Through the glass substrate of ITO plated film, at the uniform positivity photoresist of its ITO surface-coated a layer thickness, positivity photoresist major component is acetic acid propylene glycol monomethyl ether ester, epoxy resin and photosensitive material; Light blockage coating thickness is 1 μ m ~ 5 μ m.Coating photoresist mode has roller coating, spin coating, the modes such as blade coating.
Pre-baked through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 80 ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 270 ohm) and regular ITO pattern or electrode.Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.The liquid that the ITO etching solution adopts hydrochloric acid and nitric acid to mix by a certain percentage drops between 1 ~ 3 its sour pH value, etch temperature operation between 40 ~ 50 degree.Take off photoresistance film liquid and adopt dimethyl sulfoxide and monoethanolamine to mix according to a certain percentage, number percent is 70%:30%, the operation between 40 ~ 80 degree of demoulding temperature.
Described ITO electrode is horizontal direction or vertical direction conduction electrode, has the regular figure structure; The ITO electrode is that ITO conduction electrode 1 forms with ITO conduction electrode 2, and ITO conduction electrode 1 and ITO conduction electrode 2 are in same aspect, and be separate, mutually insulated, staggered designs.
The formation of insulation course:
Through the glass substrate behind the ITO electrode, at the uniform negativity photoresist of its metal face coating a layer thickness,
Negativity photoresist major component is acetic acid propylene glycol monomethyl ether ester, acrylic resin, epoxy resin and negative photosensitive agent; Light blockage coating thickness is 0.5 μ m ~ 3 μ m.Coating negativity photoresist mode has spin coating, the modes such as blade coating.
Pre-baked through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and finally forming thickness is the insulating layer pattern of 0.5 ~ 3 μ m and rule.Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.It is firmly roasting to pass through insulation course again, condition be 200 degree to 300 degree, the time is 0.5 hour to 3 hours, through behind the above-mentioned processing procedure, finally forming thickness is 0.5 μ m ~ 3 μ m, the second insulation course of figure rule.
Non-overlapping integrated capacitive touch screen and non-overlapping integrated touch screen without metal electrode layer structurally with on the production technology are all simplified to some extent, cancelled metal electrode, reduce material cost, reduced upper runoff yield journey, on touch function, all can realize single-point touches and gesture identification.
Without the non-overlapping integrated capacitive touch screen of metal electrode layer because without metal electrode, the maximum value of its ITO electric conduction pole-face resistance hinders much smaller than non-overlapping integrated touch screen ito surface.
Along with the progress in epoch, electronic product is more and more emphasized quality, keeps on improving, and integrated touch screen is no exception.The consumer more and more favors high permeability, antiradar reflectivity, ITO pattern invisibility, the product that reliability is higher.It is more and more higher like this we to be designed the integrated touch screen requirement.
The utility model uses earth silicon material and niobium pentaoxide material, and reasonably combined its thickness (experimental result such as Figure 6 and Figure 7) filters out the suitable thickness of making touch-screen, makes it in the transmitance of product and the visibility of pattern significant lifting arranged.Especially the silicon dioxide film layer thickness is chosen between the 100-1000 Ethylmercurichlorendimide, the niobium pentaoxide thicknesses of layers is chosen between the 50-500 Ethylmercurichlorendimide, extremely excellent effect is arranged, the product transmitance can be stabilized in more than 93%, the grade of pattern visuality can be stabilized in 2 grades take interior (the visual hierarchical definition of pattern as: 0 grade-can't see fully, 10 grades very obviously as seen, and the ITO pattern that progressively increases successively is more visual and obvious).
Earth silicon material has antireflection, alleviates the function of end shadow.Because different in the variation of phase place and amplitude after rete and air and rete and substrate interface reflection of the light of different polarization states, so silicon dioxide layer changes polarization state after can reflecting through rete, can reduce the product reflectivity, alleviates the pattern visuality.Along with the increase of silica coating, the interference effect of rete can produce certain antireflective effect.The reflectivity of simple glass is about 5%, is coated with its reflectivity of glass about 2% of earth silicon material.The simple glass of ITO pattern is seen at a certain visual angle of human eye, can see significantly ITO pattern on glass.The glass that is coated with silicon dioxide of ITO pattern is seen at a certain visual angle of human eye, and it can not see ITO pattern on glass significantly.
If adopt the layer of cloth order of black resin layer, silicon dioxide layer, niobium pentaoxide layer, manufacturing process then is adjusted into:
The formation of black resin layer: black resin is uniformly coated on the transparency carrier through rotary coating mode or the formula coating method of scraping, and coating thickness is 0.3 μ m ~ 5 μ m, and is pre-baked through well heater, and exposure is developed, and makes it to form required black resin zone;
The formation of silicon dioxide layer: through the silicon dioxide plated film, make the silica coating that forms layer of transparent and even thickness at black resin layer, its thickness is 100 ~ 1000 Ethylmercurichlorendimides;
The formation of niobium pentaoxide layer: through the niobium pentaoxide plated film, make the niobium pentaoxide rete that forms layer of transparent and even thickness at silicon dioxide layer, its thickness is 50 ~ 500 Ethylmercurichlorendimides;
Remaining technique does not need have ever made many adjustment.
Above content is in conjunction with concrete preferred implementation further detailed description of the utility model, can not assert that implementation of the present utility model is confined to these explanations.For the utility model person of an ordinary skill in the technical field, without departing from the concept of the premise utility, can also make some simple deduction or replace, all should be considered as belonging to protection domain of the present utility model.
Claims (4)
1. the non-overlapping integrated capacitive touch screen of Novel non-metal electrode layer is characterized in that: comprise transparency carrier, stack gradually silicon dioxide layer, niobium pentaoxide layer, black resin layer, ITO electrode, insulation course in transparency carrier; Described ITO electrode is horizontal direction or vertical direction conduction electrode, has the regular figure structure; The ITO electrode is that ITO conduction electrode 1 forms with ITO conduction electrode 2, and ITO conduction electrode 1 and ITO conduction electrode 2 are in same aspect, and be separate, mutually insulated, staggered designs; Described transparency carrier comprises viewfinder area and non-viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen; The degree of described silicon dioxide bed thickness is 100 ~ 1000 Ethylmercurichlorendimides, and the thickness of described niobium pentaoxide layer is 50 ~ 500 Ethylmercurichlorendimides.
2. the non-overlapping integrated capacitive touch screen of Novel non-metal electrode layer is characterized in that: comprise transparency carrier, stack gradually black resin layer, silicon dioxide layer, niobium pentaoxide layer, ITO electrode, insulation course in transparency carrier; Described ITO electrode is horizontal direction or vertical direction conduction electrode, has the regular figure structure; The ITO electrode is that ITO conduction electrode 1 forms with ITO conduction electrode 2, and ITO conduction electrode 1 and ITO conduction electrode 2 are in same aspect, and be separate, mutually insulated, staggered designs; Described transparency carrier comprises viewfinder area and non-viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen; The degree of described silicon dioxide bed thickness is 100 ~ 1000 Ethylmercurichlorendimides, and the thickness of described niobium pentaoxide layer is 50 ~ 500 Ethylmercurichlorendimides.
3. the non-overlapping integrated capacitive touch screen of Novel non-metal electrode layer as claimed in claim 1 or 2, it is characterized in that: described transparency carrier is that thickness is at chemically reinforced glass substrate or the resin material substrate of 0.5mm ~ 2.0mm; Described ITO electrode regular texture is triangle, or bar shaped, or oval.
4. the non-overlapping integrated capacitive touch screen of Novel non-metal electrode layer as claimed in claim 3, it is characterized in that: described black resin layer thickness is 0.3 μ m ~ 5 μ m; The ITO electrode layers thickness is 80 ~ 2000 Ethylmercurichlorendimides.
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| CN 201220119827 CN202711212U (en) | 2012-03-27 | 2012-03-27 | Novel non-metallic electrode layer non-overlapping one-piece capacitive touch screen |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013117130A1 (en) * | 2012-02-09 | 2013-08-15 | 深圳市宝明科技股份有限公司 | Non-lapping integrated capacitive touch screen without metal electrode layer and manufacturing method thereof |
| WO2014029200A1 (en) * | 2012-08-21 | 2014-02-27 | 深圳市宝明科技股份有限公司 | Non-overlapped integral capacitive touch screen with ito (indium tin oxide) layer and manufacturing method thereof |
| CN104571668A (en) * | 2013-10-26 | 2015-04-29 | 祥达光学（厦门）有限公司 | Touch panel and manufacturing method thereof |
-
2012
- 2012-03-27 CN CN 201220119827 patent/CN202711212U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013117130A1 (en) * | 2012-02-09 | 2013-08-15 | 深圳市宝明科技股份有限公司 | Non-lapping integrated capacitive touch screen without metal electrode layer and manufacturing method thereof |
| WO2014029200A1 (en) * | 2012-08-21 | 2014-02-27 | 深圳市宝明科技股份有限公司 | Non-overlapped integral capacitive touch screen with ito (indium tin oxide) layer and manufacturing method thereof |
| CN104571668A (en) * | 2013-10-26 | 2015-04-29 | 祥达光学（厦门）有限公司 | Touch panel and manufacturing method thereof |
| WO2015058630A1 (en) * | 2013-10-26 | 2015-04-30 | 祥达光学（厦门）有限公司 | Touch panel and manufacturing method therefor |
| CN104571668B (en) * | 2013-10-26 | 2018-03-16 | 祥达光学（厦门）有限公司 | Contact panel and its manufacture method |
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