CN102298475A - Indium tin oxide (ITO) through hole integrated capacitive touch screen and production method thereof - Google Patents
Indium tin oxide (ITO) through hole integrated capacitive touch screen and production method thereof Download PDFInfo
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- CN102298475A CN102298475A CN201110234546XA CN201110234546A CN102298475A CN 102298475 A CN102298475 A CN 102298475A CN 201110234546X A CN201110234546X A CN 201110234546XA CN 201110234546 A CN201110234546 A CN 201110234546A CN 102298475 A CN102298475 A CN 102298475A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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Abstract
The invention discloses an indium tin oxide (ITO) through hole integrated capacitive touch screen and a production method thereof. The ITO through hole integrated capacitive touch screen comprises a transparent glass substrate, and a black resin layer, an ITO electrode, a first insulating layer, an ITO through hole electrode, a metal electrode and a second insulating layer which are sequentially stacked on the transparent glass substrate. The ITO electrode comprises an ITO electrode 1 and an ITO electrode 2 and has a regular pattern structure, wherein the ITO electrode 1 and the ITO electrode 2 are arranged on the same layer, are independent to each other, are insulated with each other and are designed perpendicularly. The transparent substrate comprises a window area and a non-window area. The black resin layer is distributed in the non-window area of the display screen. The line of the metal electrode is only wired in the area of the black resin layer. By reasonably designing the stacking structure and the ITO conduction method of the capacitive touch screen and by adopting an ITO through hole method to conduct ITO signal electrodes up and down, the light transmittance, the working stability and the touch sensitivity of the capacitive touch screen are effectively improved.
Description
Technical field
The present invention relates to the capacitance touch screen technical field, especially relate to a kind of integral type capacitance touch screen and manufacture method thereof by the ITO via design.
Background technology
Along with the development of electronics technology, the keyboard of mobile phone, digital camera, handheld device, vehicle-carrying DVD, MP3, instrument etc. or mouse are touched gradually to shield and substitute at present.The product of touch-screen is not very burning hot several years ago, and more and more for the contact of touch screen product along with people, is approved that speed of development was accelerated gradually in nearly 2 years by more people yet.Touch-screen is grown up rapidly, has not only evoked fierce more industry competition, has also promoted the development of technology indirectly, and the mode of operation of its multi-point touch has risen to a new height to the influence power of touch-screen product especially, is also paid close attention to by people gradually.
Touch-screen is mainly formed by touching detection part and touch screen controller, touches detection part and is installed in the indicator screen front, is used to detect user touch location, send touch screen controller after the reception; And the main effect of touch screen controller is to receive touch information from touch point detection device, and converts it to contact coordinate, gives CPU again, and its can receive simultaneously the order that CPU sends and be carried out.
Medium according to the principle of work of touch-screen and transmission information, touch-screen can be divided into four kinds, be respectively resistance-type, capacitor induction type, infrared-type and surface acoustic wave type, current what be widely used is resistive touch screen, and it utilizes pressure sensitive to carry out resistance control; Resistive touch screen is a kind of laminated film of multilayer, and its major part is a resistance film screen that cooperates very much with display surface.Resistance film screen is as basic unit with one deck glass or duroplasts flat board, the surface scribbles layer of transparent oxidized metal (transparent conductive resistance) ITO(tin indium oxide) conductive layer, be stamped the smooth anti-friction plastic layer of one deck outside surface cure process above again, its inside surface also scribbles one deck ITO coating, between them, there is the transparent isolating points of many tiny (less than 1/1000 inches) that two conductive layers is separated insulation, when the finger touch screen, two conductive layers has just had contact in the position, touch point, resistance changes, on X and Y both direction, produce signal, send touch screen controller then, controller detects this contact and calculates (X, Y) position, the mode according to analog mouse operates again.
The ultimate principle of capacitive touch screen is to utilize the induction by current of human body to carry out work; capacitive touch screen is two layers of compound glass screen; the inside surface interlayer of glass screen scribbles the ITO(tin indium oxide) conducting film (plated film electro-conductive glass); outermost layer is a skim silicon soil glassivation; the ITO coating is as workplace; draw four electrodes on four angles; when finger touch is on screen; because people's bulk electric field; user and touch screen surface form a coupling capacitance; for high-frequency current, electric capacity is direct conductor, so finger siphons away a very little electric current from contact point; this electric current flows out the electrode from four jiaos of touch-screen respectively; and the electric current of these four electrodes of flowing through is directly proportional with the distance of pointing four jiaos, and controller draws touch point position by the accurate Calculation to these four current ratios.
In capacitive touch screen, projection-type capacitive touch screen is that current application is a kind of comparatively widely, has characteristics such as simple in structure, transmittance height.The touch sensible parts of projection-type capacitive touch screen are generally a plurality of column electrodes and the row electrode is staggered to form the induction matrix.Usually the design that adopts comprises the two sides that column electrode and row electrode is separately positioned on same transparency carrier, prevents from short circuit to occur at intervening portion; Perhaps column electrode and row electrode are arranged on the homonymy of same transparency carrier, be formed on the same conducting film (being generally the ITO conducting film), separate by the mode that insulation course and frame conducting bridge are set at column electrode and the staggered position of row electrode, column electrode and row electrode are separated and guarantee conducting on direction separately, can prevent effectively that it is in the intervening portion short circuit.
Usually the design proposal that adopts is: one of column electrode or row electrode are provided with on conducting film continuously, then another electrode electrode with continuous setting on conducting film serves as to be arranged to some electrode blocks at interval, position at cross-point is electrically connected adjacent electrode block by conducting bridge, thereby forms the continuous electrode on the other direction; Separate by insulation course between the electrode of conducting bridge and setting continuously, thereby effectively stop column electrode and row electrode in the cross-point short circuit.Usually the design proposal that adopts is: (1) stepped construction is followed successively by transparency carrier, first direction electrode, insulation course, conducting bridge; Perhaps (2) stepped construction is followed successively by transparency carrier, conducting bridge, insulation course, first direction electrode.
But can there be the defective of the not high and poor work stability of transmittance in the capacitive touch screen that adopts traditional design proposal, the capacitive touch screen transmittance of traditional design proposal is difficult to break through 80%, and during whole stressed flexural deformation, occur at the interface easily separating, cause electrode to open circuit and touch inefficacy, touch sensible parts damages.
Summary of the invention
One of purpose of the present invention is to provide a kind of ITO through hole integral type capacitance touch screen, reasonably design by stepped construction and ITO conduction mode capacitance touch screen, the mode of employing ITO through hole is conducting ITO signal electrode up and down, effectively improve transmittance, job stability and the touch sensitivity of capacitive touch screen.
For achieving the above object, the present invention adopts following technical scheme:
A kind of ITO through hole capacitance touch screen comprises transparency carrier, stacks gradually black resin layer, ITO electrode, first insulation course, ITO through hole electrode, metal electrode and second insulation course in transparency carrier; Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2), has the regular figure structure;
ITO electrode 1 and ITO electrode 2 are in same aspect, and be separate, mutually insulated, vertical design;
Described transparency carrier comprises viewfinder area and non-viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen; Described metal electrode circuit wiring is only at the black resin layer region.
Described ITO through hole electrode comprises the through hole electrode 1 and the black resin layer edge through hole electrode 2 of display screen vision area, has the regular figure structure, the number of through hole can be one or several, the through hole electrode mode has circular punching, oval punching, triangle punching, trapezoidal punching, hole knockouts such as rectangle, purpose make the ITO through hole electrode contact more stable, more reliable with ITO electrode (containing ITO1 and ITO2 electrode).Described through hole is opened on first insulation course (position that needs the ITO through hole).
Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2) partial electrode can be overlapped on the black resin top, and the ITO electrode needs to climb to the black resin top layer from the glass bottom.
Preferably: described transparency carrier is a thickness at 0.5 ~ 2.0 millimeter chemically reinforced glass substrate; Described ITO electrode regular texture is a rhombus, or bar shaped, or box-shaped, or snowflake type, or regular structure such as cross.
Described black resin layer can effectively block the figure layer of non-visible area, can shading, and the visible of products such as metal wire below.First insulation course makes ITO electrode and ITO through hole electrode be in insulation status, not conducting mutually.The ITO through hole electrode plays ITO conducting effect, and the conducting capacitance plate drives or the induction line electrode, has the regular figure structure.The flexible circuit board nation of ITO electrode signal conducting realizes by metal electrode in fixed zone.The second dielectric protection layer metal electrode and ITO lead make it and air insulation.
Two of purpose of the present invention is to provide a kind of manufacture method of ITO through hole integral type capacitance touch screen, adopts following technical scheme:
The formation of black resin layer: black resin is uniformly coated on the transparency carrier through the rotary coating mode or the formula coating method of scraping, and coating thickness is 0.3um ~ 5um, and is roasting in advance through well heater, and exposure is developed, and makes it to form required black resin zone;
The black resin zone is the non-viewfinder area of display screen, and purpose is the figure layer that blocks non-visible area, can shading, and the visible of products such as metal electrode below; Described black resin be photonasty protective seam photoresist (commodity by Taiwan forever photochemistry produced EK410); it is a kind of black negativity photoresist; principal ingredient is: the acrylic resin; epoxy resin; the negative photosensitive agent; acetate propylene glycol monomethyl ether ester and black pigment, concrete ratio is a resene: acetate propylene glycol monomethyl ether ester: black pigment and negative photosensitive agent=15 ~ 30:60 ~ 80:1 ~ 10.
Described black resin layer is trapezium structure, interior thickness is 0.3um ~ 5um, its bevel angle is that angle is mild between 6 ~ 60 degree, and purpose is that ITO electrode (drive wire ITO electrode 1 and line of induction ITO electrode 2) can be owing to difference in thickness causes the ITO lead rupture greatly during by the slope.The black resin zone is the non-viewfinder area of display screen, and purpose is for blocking metal electrode.
The formation of ITO electrode: transparency carrier is carried out chemical enhanced, pass through the ITO plated film again, make to form layer of transparent and the uniform ITO rete of thickness on glass substrate, its thickness is 50 Ethylmercurichlorendimides ~ 2000 Ethylmercurichlorendimides;
Through the transparency carrier of ITO plated film, at the transparency carrier of its ITO plated film, at the uniform positivity photoresist of its ITO surface coated one layer thickness, the photoresistance coating thickness is 1um ~ 5um;
Roasting in advance through photoresistance, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 50 ~ 2000 Ethylmercurichlorendimides (face resistance is 10 ~ 430 ohm) and regular ITO pattern or electrode.
Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2), has the regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, and be separate, mutually insulated, vertical design.
Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2) partial electrode can be overlapped on the black resin top, and the ITO electrode needs to climb to the black resin top layer from the glass bottom.
The formation of first insulation course:
Process ITO crosses the transparency carrier behind the bridge electrode, is coated with the uniform negativity photoresist of a layer thickness at its ITO face, and the photoresistance coating thickness is 0.5um ~ 3um;
Roasting in advance through photoresistance, exposure is developed, and finally forming thickness is the insulating layer pattern of 0.5 ~ 3um and rule.
Described pattern perforate mode and quantity are the position of ITO through hole, and the regular figure of pattern is respectively round hole, oval aperture, triangle perforate, trapezoidal perforate, modes such as rectangle perforate.
The formation of ITO through hole electrode layer:
Form the transparency carrier of first insulation course, pass through the ITO plated film once more, make to form layer of transparent and the uniform ITO rete of thickness on glass substrate, its thickness is 50 Ethylmercurichlorendimides ~ 2000 Ethylmercurichlorendimides (face resistance is 10 ~ 430 ohm);
Through the transparency carrier of ITO plated film, at the uniform positivity photoresist of its ITO surface coated one layer thickness, the photoresistance coating thickness is 1um ~ 5um;
Roasting in advance through photoresistance, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 50 ~ 2000 Ethylmercurichlorendimides (face resistance is 10 ~ 430 ohm) and regular ITO pattern or electrode.
Described ITO through hole electrode comprises the through hole electrode 1 and the black resin layer edge through hole electrode 2 of display screen vision area, has the regular figure structure, the number of through hole can be one or several, the through hole electrode mode has circular punching, oval punching, triangle punching, trapezoidal punching, hole knockouts such as rectangle, purpose make the ITO through hole electrode contact more stable, more reliable with ITO electrode (containing ITO electrode 1 and ITO electrode 2).Through hole electrode 1 and through hole electrode 2 are at same one deck, and be separate, mutually insulated.Described through hole is opened on first insulation course (position that needs the ITO through hole).
ITO through hole electrode 1 conduction mode: ITO electrode 1 is by the through hole electrode 1 upwards conducting of first insulation course, connecting by ITO through hole electrode 1 level on first insulation course, through hole electrode 1 by first insulation course is conducting to ITO electrode 1 downwards again, makes ITO electrode 1 form capacitance plate and drives path.ITO electrode 2 direct film forming are on glass substrate, and single ITO electrode links to each other, directly conducting.
ITO through hole electrode 2 conduction modes: film forming is in the through hole electrode 2 upwards conductings of the ITO at black resin edge electrode (containing ITO electrode 1 and ITO electrode 2) by first insulation course, through hole electrode 2 conducting that links to each other with metal electrode again, make ITO electrode (containing ITO electrode 1 and ITO electrode 2) and metal electrode conducting, form the capacitance plate function signal.
The formation of metal electrode layer:
Form the transparency carrier of ITO electrode layer, through metal coating, make it to form a layer thickness even metal rete on transparency carrier, its thickness is 500 Ethylmercurichlorendimides ~ 4000 Ethylmercurichlorendimides.
Transparency carrier through metal coating is coated with the uniform positivity photoresist of a layer thickness in its metal surface, the photoresistance coating thickness is 1um ~ 5um;
Roasting in advance through photoresistance, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 500 ~ 4000 Ethylmercurichlorendimides and regular metal pattern or electrode.
The formation of second insulation course:
Transparency carrier through behind the metal electrode is coated with the uniform negativity photoresist of a layer thickness at its metal face, and the photoresistance coating thickness is 0.5um ~ 3um;
Roasting in advance through photoresistance, exposure is developed, and finally forming thickness is the insulating layer pattern of 0.5 ~ 3um and rule.
Preferably: described transparency carrier be thickness the chemically reinforced glass substrate; Described ITO is made up of In2O3 and SnO2, and its mass ratio is 85 ~ 95:5 ~ 15.The mode of ITO plated film can adopt the vacuum magnetic control sputter, chemical vapour deposition technique, hot evaporation, collosol and gel.
Described positivity photoresist major component is an acetate propylene glycol monomethyl ether ester, epoxy resin and positivity emulsion (TR400 that commodity Taiwan new Ying Cai company by name produces); Negativity photoresist major component is an acetate propylene glycol monomethyl ether ester, the acrylic resin, and epoxy resin and negative photosensitive agent (commodity Taiwan Da Xing company by name produces POC A46) coating photoresist mode has roller coating, spin coating, modes such as blade coating.
Coating photoresist mode has roller coating, spin coating, modes such as blade coating.
The metallic diaphragm of described metal coating is MoNb, AlNd, MoNb piles up the sandwich structure that forms, thickness is in 50 Ethylmercurichlorendimides ~ 500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimides ~ 3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimides ~ 500 Ethylmercurichlorendimide ratios collocation, wherein Mo and Nb mass ratio are 85 ~ 95:5 ~ 15 in the MoNb alloy material, and Al and Nd mass ratio are 95 ~ 98:2 ~ 5 in the AlNd alloy material.
The metal material type selecting also can be made up of silver alloy or aldary, and composition combines by a certain percentage.The metallic diaphragm plated film is the vacuum magnetic control sputter.
The present invention compared with prior art has following advantage and beneficial effect:
The present invention is by reasonably being provided with stepped construction, on one deck glass substrate, finish touch function signal electrode and black resin overlayer, comprise the order of ITO through hole electrode layer etc. and the mode of pattern, can significantly promote the yield of product, reduce cost, promote product reliability.ITO through hole integral type capacitance touch screen of the present invention has only the layer of transparent substrate, between thickness of glass 0.5mm ~ 2.0mm, has thin thickness, advantages such as light weight; By appropriate design, make transmitance to reach more than 90% to each layer.The present invention adopts ITO through hole mode characteristics: can reduce the ITO electrode greatly at the probability of climbing with the descending fracture, increase its conducting yield.
Description of drawings
Fig. 1 is the structural representation of ITO through hole capacitance touch screen of the present invention;
Fig. 2 is the described glass substrate structural representation of the embodiment of the invention;
Fig. 3 is the local structure for amplifying synoptic diagram of ITO through hole figure;
Fig. 4 is the cross-sectional view of ITO through hole integral type capacitance touch screen of the present invention.
Embodiment
Below in conjunction with specific embodiment the present invention is described in further detail.
As shown in Figures 1 and 2, described ITO through hole capacitance touch screen, comprise that thickness at 0.5 ~ 2.0 millimeter chemically reinforced glass substrate 11, stacks gradually black resin layer 12, ITO electrode 13, first insulation course 14, ITO through hole electrode 15, metal electrode 16 and second insulation course 17 in transparent glass substrate; Described ITO electrode 13 comprises that capacitance plate drives (ITO electrode 1) 42 and induction electrode (ITO electrode 2) 43, has the regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, and be separate, mutually insulated, vertical design.Described hardened glass substrate 11 comprises viewfinder area 21 and non-viewfinder area 22, and black resin layer 12 is distributed in the non-viewfinder area of display screen; Described metal electrode lines 16 tunnel wirings are only at black resin layer region 47.
Fig. 3 and Figure 4 shows that the partial structurtes enlarged diagram or the cross-sectional view of the described ITO gap bridge of present embodiment capacitance touch screen: black resin layer 47 can effectively block the figure layer of non-visible area, can shading, and the visible of products such as metal wire below.First insulation course 45 makes ITO electrode 13 and ITO through hole electrode 46 be in insulation status, not conducting mutually; ITO electrode 13 comprises that capacitance plate drives (ITO electrode 1) 42 and induction electrode (ITO electrode 2) 43, has the regular figure structure; Be complementary with the ITO shape of through holes.The ITO through hole electrode plays ITO conducting effect, and the conducting capacitance plate drives or the induction line electrode, has the regular figure structure; The number of through hole can be one or several, and the through hole electrode mode has circular punching, oval punching, the triangle punching, trapezoidal punching, hole knockouts such as rectangle, purpose makes the ITO through hole electrode contact more stable, more reliable with ITO electrode (containing ITO1 and ITO2 electrode).Described through hole is opened on first insulation course (position that needs the ITO through hole).。The flexible circuit board nation of ITO electrode signal conducting realizes by metal electrode 48 in fixed zone.Second insulation course, 44 protection metal electrodes 48 and ITO lead make it and air insulation.
Its preparation technology is as follows:
The formation of black resin layer: black resin is uniformly coated on transparent glass substrate 41(11 through the rotary coating mode or the formula coating method of scraping) on, coating thickness is 0.3um ~ 5um, and is roasting in advance through well heater, exposure, develop, make it to form required black resin zone; Be trapezium structure, interior thickness is 0.3um ~ 5um, and its bevel angle is that angle is mild between 6 ~ 60 degree, and purpose is that ITO electrode (drive wire ITO electrode 1 and line of induction ITO electrode 2) can be owing to difference in thickness causes the ITO lead rupture greatly during by the slope.The black resin zone is the non-viewfinder area of display screen, and purpose is for blocking metal electrode.Described black resin be photonasty protective seam photoresist (commodity by Taiwan forever photochemistry produced EK410); it is a kind of black negativity photoresist; principal ingredient is: the acrylic resin; epoxy resin; the negative photosensitive agent; acetate propylene glycol monomethyl ether ester and black pigment, concrete ratio is a resene: acetate propylene glycol monomethyl ether ester: black pigment and negative photosensitive agent=15 ~ 30:60 ~ 80:1 ~ 10.
Pre-roasting temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.It is roasting firmly to pass through black resin layer again, and condition is 200 to spend to 300 degree, and the time is half an hour to 3 hour, and through behind the above-mentioned processing procedure, finally forming thickness is 0.3um ~ 5um, the black resin layer of figure rule.
The formation of ITO electrode: transparent glass substrate is carried out chemical enhanced, pass through the ITO plated film again, make to form layer of transparent and the uniform ITO rete of thickness on glass substrate, its thickness is 50 Ethylmercurichlorendimides ~ 2000 Ethylmercurichlorendimides (face resistance is 10 ~ 430 ohm); The ITO material is made up of In2O3 and SnO2, and its mass ratio is 85 ~ 95:5 ~ 15.The mode of ITO plated film has the vacuum magnetic control sputter, chemical vapour deposition technique, hot evaporation, collosol and gel.
Through the transparent glass substrate of ITO plated film, at the uniform positivity photoresist of its ITO surface coated one layer thickness, the photoresistance coating thickness is 1um ~ 5um; Positivity photoresist major component is acetate propylene glycol monomethyl ether ester, epoxy resin and positivity emulsion.The photoresistance coating thickness is 1um ~ 5um.Coating photoresist mode has roller coating, spin coating, modes such as blade coating.
Roasting in advance through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 50 ~ 2000 Ethylmercurichlorendimides (face resistance is 10 ~ 430 ohm) and regular ITO pattern or electrode.Pre-roasting temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.The soup that the ITO etching solution adopts hydrochloric acid and nitric acid to mix by a certain percentage drops between 1 ~ 3 its sour pH value, etch temperature operation between 40 ~ 50 degree.Take off photoresistance film liquid and adopt dimethyl sulfoxide and monoethanolamine to mix according to a certain percentage, number percent is 70%:30%, the operation between 40 ~ 80 degree of demoulding temperature.
Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2), has the regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, and be separate, mutually insulated, vertical design.Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2) partial electrode can be overlapped on the black resin top, and the ITO electrode needs to climb to the black resin top layer from the glass bottom.
The formation of first insulation course:
Through the transparent glass substrate behind the ITO electrode, be coated with the uniform negativity photoresist of a layer thickness at its ITO face, negativity photoresist major component is an acetate propylene glycol monomethyl ether ester, the acrylic resin, epoxy resin and negative photosensitive agent (commodity Taiwan Da Xing company by name produces POC A46), the photoresistance coating thickness is 0.5um ~ 3um; Coating photoresist mode has spin coating, modes such as blade coating.
Described pattern perforate mode and quantity are the position of ITO through hole, and the regular figure of pattern is respectively round hole, oval aperture, triangle perforate, trapezoidal perforate, modes such as rectangle perforate.
Roasting in advance through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and finally forming thickness is the insulating layer pattern of 0.5 ~ 3um and rule.Pre-roasting temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.It is roasting firmly to pass through insulation course again, and condition is 200 to spend to 300 degree, and the time is half an hour to 3 hour, and through behind the above-mentioned processing procedure, finally forming thickness is 0.5um ~ 3um, the insulation course 1 of figure rule.
The formation of ITO through hole electrode layer:
Form the transparent glass substrate of first insulation course, pass through the ITO plated film once more, make to form layer of transparent and the uniform ITO rete of thickness on glass substrate, its thickness is 50 Ethylmercurichlorendimides ~ 2000 Ethylmercurichlorendimides (face resistance is 10 ~ 430 ohm); The ITO material is made up of In2O3 and SnO2, and its mass ratio is 85 ~ 95:5 ~ 15.The mode of ITO plated film has the vacuum magnetic control sputter, chemical vapour deposition technique, hot evaporation, collosol and gel.
Glass substrate through the ITO plated film, at the uniform positivity photoresist of its ITO surface coated one layer thickness, positivity photoresist major component is an acetate propylene glycol monomethyl ether ester, epoxy resin and positivity emulsion (TR400 that commodity Taiwan new Ying Cai company by name produces); The photoresistance coating thickness is 1um ~ 5um.Coating photoresist mode has roller coating, spin coating, modes such as blade coating.
Roasting in advance through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 50 ~ 2000 Ethylmercurichlorendimides (face resistance is 10 ~ 430 ohm) and regular ITO pattern or electrode.Pre-roasting temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.The soup that the ITO etching solution adopts hydrochloric acid and nitric acid to mix by a certain percentage drops between 1 ~ 3 its sour pH value, etch temperature operation between 40 ~ 50 degree.Take off photoresistance film liquid and adopt dimethyl sulfoxide and monoethanolamine to mix according to a certain percentage, number percent is 70%:30%, the operation between 40 ~ 80 degree of demoulding temperature.
Described ITO through hole electrode comprises the through hole electrode 1 and the black resin layer edge through hole electrode 2 of display screen vision area, has the regular figure structure, the number of through hole can be one or several, the through hole electrode mode has circular punching, oval punching, triangle punching, trapezoidal punching, hole knockouts such as rectangle, purpose make the ITO through hole electrode contact more stable, more reliable with ITO electrode (containing ITO electrode 1 and ITO electrode 2).Through hole electrode 1 and through hole electrode 2 are at same one deck, and be separate, mutually insulated.Described through hole is opened on first insulation course (position that needs the ITO through hole).
ITO through hole electrode 1 conduction mode: ITO electrode 1 is by the through hole electrode 1 upwards conducting of first insulation course, connecting by ITO through hole electrode 1 level on first insulation course, through hole electrode 1 by first insulation course is conducting to ITO electrode 1 downwards again, makes ITO electrode 1 form capacitance plate and drives path.ITO electrode 2 direct film forming are on glass substrate, and single ITO electrode links to each other, directly conducting.
ITO through hole electrode 2 conduction modes: film forming is in the through hole electrode 2 upwards conductings of the ITO at black resin edge electrode (containing ITO electrode 1 and ITO electrode 2) by first insulation course, through hole electrode 2 conducting that links to each other with metal electrode again, make ITO electrode (containing ITO electrode 1 and ITO electrode 2) and metal electrode conducting, form the capacitance plate function signal.
The formation of metal electrode layer:
Form the glass substrate of ITO electrode layer, pass through metal coating again, make to form a layer thickness even metal rete on glass substrate, its thickness is 500 Ethylmercurichlorendimides ~ 4000 Ethylmercurichlorendimides.The metallic diaphragm material is MoNb, AlNd, MoNb piles up the sandwich structure that forms, thickness is in 50 Ethylmercurichlorendimides ~ 500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimides ~ 3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimides ~ 500 Ethylmercurichlorendimide ratios collocation, wherein Mo and Nb mass ratio are 85 ~ 95:5 ~ 15 in the MoNb alloy material, and Al and Nd mass ratio are 95 ~ 98:2 ~ 5 in the AlNd alloy material.The metal material type selecting also can be made up of silver alloy or aldary, and composition combines by a certain percentage.Metal coating is the vacuum magnetic control sputter.
Glass substrate through metal coating, be coated with the uniform positivity photoresist of a layer thickness in its metal surface, described positivity photoresist major component is an acetate propylene glycol monomethyl ether ester, epoxy resin and positivity emulsion (TR400 that commodity Taiwan new Ying Cai company by name produces), the photoresistance coating thickness is 1um ~ 5um.Coating photoresist mode has roller coating, spin coating, modes such as blade coating.Roasting in advance through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 500 ~ 4000 Ethylmercurichlorendimides and regular metal pattern or electrode.Pre-roasting temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.The soup that metal etch liquid adopts phosphoric acid, acetic acid and nitric acid to mix by a certain percentage, etch temperature operation between 40 ~ 50 degree.Take off photoresistance film liquid and adopt dimethyl sulfoxide and monoethanolamine to mix according to a certain percentage, number percent is 70%:30%, the operation between 40 ~ 80 degree of demoulding temperature.
The formation of second insulation course:
Through the glass substrate behind the metal electrode, be coated with the uniform negativity photoresist of a layer thickness at its metal face, negativity photoresist major component is an acetate propylene glycol monomethyl ether ester, acrylic resin, epoxy resin and negative photosensitive agent (commodity Taiwan Da Xing company by name produces POC A46); The photoresistance coating thickness is 0.5um ~ 3um.Coating photoresist mode has spin coating, modes such as blade coating.
Roasting in advance through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and finally forming thickness is the insulating layer pattern of 0.5 ~ 3um and rule.Pre-roasting temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.It is roasting firmly to pass through insulation course again, and condition is 200 to spend to 300 degree, and the time is 0.5 hour to 3 hours, and through behind the above-mentioned processing procedure, finally forming thickness is 0.5um ~ 3um, second insulation course of figure rule.
Above content be in conjunction with concrete preferred implementation to further describing that the present invention did, can not assert that concrete enforcement of the present invention is confined to these explanations.For the general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (10)
1. an ITO through hole integral type capacitance touch screen comprises transparency carrier, stacks gradually black resin layer, ITO electrode, first insulation course, ITO through hole electrode, metal electrode and second insulation course in transparency carrier; Described ITO electrode comprises ITO electrode 1 and ITO electrode 2, has the regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, and be separate, mutually insulated, vertical design;
Described transparency carrier comprises viewfinder area and non-viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen; Described metal electrode circuit wiring is only at the black resin layer region.
2. ITO through hole integral type capacitance touch screen as claimed in claim 1 is characterized in that: described transparency carrier is the chemically reinforced glass substrate of thickness at 0.5mm ~ 2.0mm; The number of the through hole of described ITO through hole electrode can be one or several, and the through hole electrode mode has circular punching, oval punching, triangle punching, trapezoidal punching, or rectangle punching.
3. ITO through hole integral type capacitance touch screen as claimed in claim 2, it is characterized in that: described black resin layer thickness is 0.3um ~ 5um; The ITO electrode layers thickness is 50 ~ 2000 Ethylmercurichlorendimides; The thickness of first insulation course is 0.5 ~ 3um; Described ITO through hole electrode thickness is 50 Ethylmercurichlorendimides ~ 2000 Ethylmercurichlorendimides; The thickness of metal electrode layer is 500 ~ 4000 Ethylmercurichlorendimides; Second thickness of insulating layer is 0.5 ~ 3um.
4. ITO through hole integral type capacitance touch screen as claimed in claim 3, it is characterized in that: the metallic diaphragm of described metal coating is MoNb, AlNd, MoNb piles up the sandwich structure that forms, thickness is in 50 Ethylmercurichlorendimides ~ 500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimides ~ 3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimides ~ 500 Ethylmercurichlorendimide ratios collocation, wherein Mo and Nb mass ratio are 85 ~ 95:5 ~ 15 in the MoNb alloy material, and Al and Nd mass ratio are 95 ~ 98:2 ~ 5 in the AlNd alloy material.
5. ITO through hole integral type capacitance touch screen as claimed in claim 4, it is characterized in that: described ITO comprises In2O3 and SnO2, its mass ratio is 85 ~ 95:5 ~ 15.
6. method for preparing ITO through hole integral type capacitance touch screen comprises step:
The formation of black resin layer: black resin is uniformly coated on the transparency carrier through the rotary coating mode or the formula coating method of scraping, and coating thickness is 0.3um ~ 5um, and is roasting in advance through well heater, and exposure is developed, and makes it to form required black resin zone; Described black resin is a photonasty protective seam photoresist, and described photoresist comprises the acrylic resin, epoxy resin, negative photosensitive agent, acetate propylene glycol monomethyl ether ester and black pigment; Its ratio is a resene: acetate propylene glycol monomethyl ether ester: black pigment and negative photosensitive agent=15 ~ 30:60 ~ 80:1 ~ 10;
The formation of ITO electrode: transparency carrier is carried out chemical enhanced, pass through the ITO plated film again, make to form layer of transparent and the uniform ITO rete of thickness on glass substrate, its thickness is 50 Ethylmercurichlorendimides ~ 2000 Ethylmercurichlorendimides;
Through the transparency carrier of ITO plated film, at the uniform positivity photoresist of its ITO surface coated one layer thickness, the photoresistance coating thickness is 1um ~ 5um;
Roasting in advance through photoresistance, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 50 ~ 2000 Ethylmercurichlorendimides and regular ITO pattern or electrode;
Described ITO electrode comprises ITO electrode 1ITO electrode 2, has the regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, and be separate, mutually insulated, vertical design;
The formation of first insulation course:
Transparency carrier through behind the ITO electrode is coated with the uniform negativity photoresist of a layer thickness at its ITO face, and the photoresistance coating thickness is 0.5um ~ 3um;
Roasting in advance through photoresistance, exposure is developed, and finally forming thickness is the insulating layer pattern of 0.5 ~ 3um and rule;
The formation of ITO through hole electrode:
Form the transparency carrier of first insulation course, pass through the ITO plated film once more, make to form layer of transparent and the uniform ITO rete of thickness on glass substrate, its thickness is 50 Ethylmercurichlorendimides ~ 2000 Ethylmercurichlorendimides;
Through the transparency carrier of ITO plated film, at the uniform positivity photoresist of its ITO surface coated one layer thickness, the photoresistance coating thickness is 1um ~ 5um;
Roasting in advance through photoresistance, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 50 ~ 2000 Ethylmercurichlorendimides and regular ITO pattern or electrode;
The formation of metal electrode layer:
Form the transparency carrier of ITO electrode layer, through metal coating, make it to form a layer thickness even metal rete on transparency carrier, its thickness is 500 Ethylmercurichlorendimides ~ 4000 Ethylmercurichlorendimides;
Transparency carrier through metal coating is coated with the uniform positivity photoresist of a layer thickness in its metal surface, the photoresistance coating thickness is 1um ~ 5um;
Roasting in advance through photoresistance, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 500 ~ 4000 Ethylmercurichlorendimides and regular metal pattern or electrode;
The formation of second insulation course:
Transparency carrier through behind the metal electrode is coated with the uniform negativity photoresist of a layer thickness at its metal face, and the photoresistance coating thickness is 0.5um ~ 3um;
Roasting in advance through photoresistance, exposure is developed, and finally forming thickness is the insulating layer pattern of 0.5 ~ 3um and rule.
7. the method for preparing ITO through hole integral type capacitance touch screen as claimed in claim 6 is characterized in that: described transparency carrier is a thickness at 0.5 ~ 2.0 millimeter chemically reinforced glass substrate; Described ITO comprises In2O3 and SnO2, and its mass ratio is 85 ~ 95:5 ~ 15.
8. the method for preparing ITO through hole integral type capacitance touch screen as claimed in claim 7 is characterized in that: described positivity photoresist major component is an acetate propylene glycol monomethyl ether ester, epoxy resin and positivity emulsion; Negativity photoresist major component is acetate propylene glycol monomethyl ether ester, acrylic resin, epoxy resin and negative photosensitive agent.
9. the method for preparing ITO through hole integral type capacitance touch screen as claimed in claim 8 is characterized in that:
The metallic diaphragm of described metal coating is MoNb, AlNd, MoNb piles up the sandwich structure that forms, thickness is in 50 Ethylmercurichlorendimides ~ 500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimides ~ 3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimides ~ 500 Ethylmercurichlorendimide ratios collocation, wherein Mo and Nb mass ratio are 85 ~ 95:5 ~ 15 in the MoNb alloy material, and Al and Nd mass ratio are 95 ~ 98:2 ~ 5 in the AlNd alloy material.
10. the method for preparing ITO through hole integral type capacitance touch screen as claimed in claim 9 is characterized in that: the mode of described ITO plated film is the vacuum magnetic control sputter, perhaps is chemical vapour deposition technique, perhaps is hot evaporation, perhaps is collosol and gel.
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| CN201110234546A CN102298475B (en) | 2011-08-16 | 2011-08-16 | Indium tin oxide (ITO) through hole integrated capacitive touch screen and production method thereof |
| PCT/CN2012/077351 WO2013023491A1 (en) | 2011-08-16 | 2012-06-21 | Ito through hole single-body capacitive touch screen and manufacturing method |
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| CN201110234546A CN102298475B (en) | 2011-08-16 | 2011-08-16 | Indium tin oxide (ITO) through hole integrated capacitive touch screen and production method thereof |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102541383A (en) * | 2012-02-09 | 2012-07-04 | 深圳市宝明科技股份有限公司 | Non-lapping integrated capacitive touch screen without metal electrode layer and manufacturing method for non-lapping integrated capacitive touch screen |
| CN102637101A (en) * | 2012-03-27 | 2012-08-15 | 深圳市宝明科技股份有限公司 | Novel ITO (indium tin oxide) through hole integrated capacitive touch screen and production method thereof |
| CN103034387A (en) * | 2013-01-12 | 2013-04-10 | 深圳市中显微电子有限公司 | Single substrate type capacitive touch screen and manufacture method thereof |
| CN103207704A (en) * | 2013-04-16 | 2013-07-17 | 南昌欧菲光显示技术有限公司 | Touch panel and production method thereof |
| CN103365498A (en) * | 2012-04-01 | 2013-10-23 | 深圳欧菲光科技股份有限公司 | Panel, touch screen comprising panel and method for manufacturing panel |
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| CN103885578A (en) * | 2012-12-20 | 2014-06-25 | 宸正光电（厦门）有限公司 | Touch panel and production method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008133432A1 (en) * | 2007-04-30 | 2008-11-06 | Young-Soo Ahn | The signal applying structure for touch screen with unified window |
| CN101763201A (en) * | 2009-12-18 | 2010-06-30 | 鸿富锦精密工业（深圳）有限公司 | Electronic device with touchpad |
| CN101853115A (en) * | 2010-05-18 | 2010-10-06 | 程抒一 | Integrated projection-type capacitive touch screen and manufacturing method thereof |
| CN102081477A (en) * | 2010-12-29 | 2011-06-01 | 广东中显科技有限公司 | Multi-point touch panel |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102253782B (en) * | 2011-08-16 | 2013-05-08 | 深圳市宝明科技股份有限公司 | ITO (Indium Tin Oxide)-bridged integrated capacitive touch screen and manufacturing method |
-
2011
- 2011-08-16 CN CN201110234546A patent/CN102298475B/en active Active
-
2012
- 2012-06-21 WO PCT/CN2012/077351 patent/WO2013023491A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008133432A1 (en) * | 2007-04-30 | 2008-11-06 | Young-Soo Ahn | The signal applying structure for touch screen with unified window |
| CN101763201A (en) * | 2009-12-18 | 2010-06-30 | 鸿富锦精密工业（深圳）有限公司 | Electronic device with touchpad |
| CN101853115A (en) * | 2010-05-18 | 2010-10-06 | 程抒一 | Integrated projection-type capacitive touch screen and manufacturing method thereof |
| CN102081477A (en) * | 2010-12-29 | 2011-06-01 | 广东中显科技有限公司 | Multi-point touch panel |
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|---|---|---|---|---|
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| CN102541383A (en) * | 2012-02-09 | 2012-07-04 | 深圳市宝明科技股份有限公司 | Non-lapping integrated capacitive touch screen without metal electrode layer and manufacturing method for non-lapping integrated capacitive touch screen |
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| CN103365498A (en) * | 2012-04-01 | 2013-10-23 | 深圳欧菲光科技股份有限公司 | Panel, touch screen comprising panel and method for manufacturing panel |
| EP2669773A3 (en) * | 2012-05-31 | 2016-07-20 | LG Innotek Co., Ltd. | Touch panel |
| KR20130134975A (en) * | 2012-05-31 | 2013-12-10 | 엘지이노텍 주식회사 | Touch panel and manufacturing method thereof |
| CN103455197A (en) * | 2012-05-31 | 2013-12-18 | Lg伊诺特有限公司 | Touch panel |
| CN103885578A (en) * | 2012-12-20 | 2014-06-25 | 宸正光电（厦门）有限公司 | Touch panel and production method thereof |
| CN103885578B (en) * | 2012-12-20 | 2017-04-05 | 宸正光电（厦门）有限公司 | Contact panel and its manufacture method |
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| CN103207704A (en) * | 2013-04-16 | 2013-07-17 | 南昌欧菲光显示技术有限公司 | Touch panel and production method thereof |
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Also Published As
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|---|---|
| CN102298475B (en) | 2012-08-29 |
| WO2013023491A1 (en) | 2013-02-21 |
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