CN103186309A

CN103186309A - Capacitive touch screen and production process thereof

Info

Publication number: CN103186309A
Application number: CN2013101283253A
Authority: CN
Inventors: 沈励; 许沭华; 迟晓辉; 胡里程
Original assignee: Wuhu Token Sciences Co Ltd
Current assignee: Wuhu Token Sciences Co Ltd
Priority date: 2013-04-15
Filing date: 2013-04-15
Publication date: 2013-07-03

Abstract

The invention discloses a capacitive touch screen. An indium tin oxide (ITO) jump conductor diagram layer, a transparent resin photo-sensitizer (OC) insulated bridging layer and an ITO unit diagram are sequentially arranged on the floating process surface of a glass substrate of the touch screen, and metallic four-side circuit diagram layers are arranged on the circumference of the glass substrate. The capacitive touch screen has the advantages that a phenomenon of 'pocks' on the capacitive screen is effectively eliminated; because the ITO unit diagram is sputtered at a normal temperature in the prior art, the resistance of an ITO film is difficult to control; and the insulated bridging layer is made by using negative insulated transparent photo-resistance of an OC, so that the ITO jump conductor layer is effectively protected, the ITO unit diagram can be sputtered in a normal high-temperature vacuum magnetron sputtering mode, the film resistance required by standards can be effectively controlled, a single ITO etchant can be used in the yellow light making process, a step of high-temperature baking is reduced, the production efficiency is improved, and the production cost is reduced.

Description

A kind of capacitive touch screen and production technology thereof

Technical field

The present invention relates to a kind of capacitive touch screen and production technology thereof with double-deck high temperature ITO figure layer and jump structure.

Background technology

The touch-control input mode of existing contact panel (Touch Panel) comprises resistance-type, condenser type, optical profile type, induction and sound wave induction type etc.The touch screen of Sheng Chaning mainly is capacitive touch screen in the market, and it mainly is divided into two kinds of surface-type and projection-types.

Wherein projection-type claims the inductance capacitance touch screen again, and need not manual synchronizing, adopts matrix structure, and degree of accuracy is very high, is highly suitable on the portable type electronic product and uses.In the capacitive touch screen processing procedure, mainly be divided into two kinds and make structure:

Two-sided (DITO) constructed products function is better, and structure is more firm, and reliability is outstanding.But shortcoming is being made the difficulty height.Patent is conflicted easily;

Single face (SITO) structure, as shown in Figure 1, this class screen is screen construction involved in the present invention, and this capacitive touch screen physical construction is simple, and existing market is generally all produced metal (mo/al/mo) and is jumped layer (jumper), and processing procedure is simple.But metal jump break point, metal jump layer pattern width requirement is at 7-9um, and the integrated artistic parameter is wayward, metal Jump Graph layer reflectivity height, outward appearance can exist the dazzle of jump conductor figure layer to produce " pit " phenomenon influences outward appearance.

Summary of the invention

Technical matters to be solved by this invention is to realize a kind of capacitive touch screen of avoiding existing " pit " phenomenon, and the double-deck high temperature ITO membrane process processed of producing this capacitance plate.

To achieve these goals, the technical solution used in the present invention is: a kind of capacitive touch screen, the glass substrate float glass process face of touch screen is provided with ITO jump conductor figure layer, OC (OC transparent resin emulsion) insulation bridge formation layer, ITO unit figure successively, and periphery is provided with metal wiring diagram layer all around.

Described glass substrate air surface is provided with electrostatic prevention ITO layer and electrostatic prevention silicon dioxide layer of protection successively, and described ITO unit figure is provided with resin protective layer outward.

A kind of production technology of capacitive touch screen,

Step 1, glass substrate float glass process face adopt the vacuum magnetic-control sputtering method to be coated with the ITO film, make ITO jump conductor figure layer by the gold-tinted photoetching process again;

Step 2, make one deck by the gold-tinted photoetching making OC insulation layer of building bridge at ITO jump conductor figure layer;

Step 3, employing vacuum magnetic-control sputtering method are coated with the ITO film, make the ITO unit figure by the gold-tinted photoetching process again;

Step 4, utilize the vacuum magnetic-control sputtering coating machine outside the ITO unit figure of making, to plate the layer of metal conductive material afterwards, more here by wiring diagram layer around the wiring diagram layer metal around the gold-tinted photoetching making metal;

Step 5, in the glass substrate air surface respectively by being coated with electrostatic prevention ITO layer and electrostatic prevention silicon dioxide layer of protection successively with vacuum magnetic-control sputtering, at float glass process face outermost layer by touch-screen gold-tinted photoetching making resin protective layer.

Further, the sputter temperature of described ITO jump conductor figure layer and ITO unit figure employing vacuum magnetic-control sputtering method is 250 ℃-350 ℃.

Further, described OC insulation bridge formation layer adopts an OC negativity insulation transparent photoresistance.

The invention has the advantages that the effective phenomenon that occurs " pit " on the capacitance plate that solved; and the ITO unit figure all is to adopt normal temperature to come sputter in the conventional art; the difficult control of ITO film resistance; this patent is made insulation bridge formation layer by utilizing OC negativity insulation transparent photoresistance; effectively protect ITO jump conductor layer; make the ITO unit figure also can adopt normal high-temperature vacuum magnetron sputtering mode sputter; energy is the needed film resistance of control criterion effectively; have to make and use single ITO etching solution in the gold-tinted processing procedure and reduce high-temperature baking one; improve production efficiency, reduced production cost.

Description of drawings

Below the content of every width of cloth accompanying drawing expression in the instructions of the present invention and the mark among the figure are made brief description:

Fig. 1 is common metal jump conductor structure planimetric map;

Fig. 2 is ITO jump conductor structure planimetric map of the present invention:

Fig. 3 is capacitance plate cut-open view of the present invention;

Mark among the above-mentioned figure is: 1, electrostatic prevention silicon dioxide layer of protection; 2, electrostatic prevention ITO layer; 3, glass substrate; 4, ITO jump conductor figure layer; 5, OC insulation bridge formation layer; 6, ITO unit figure; 7, wiring diagram layer around the metal; 8, resin protective layer; 9, metal jump conductor; 10, insulation is built bridge.

Embodiment

Contrast accompanying drawing below, by the description to embodiment, the effect of the mutual alignment between the shape of the specific embodiment of the present invention such as related each member, structure, the each several part and annexation, each several part and principle of work, manufacturing process and operation using method etc., be described in further detail, to help those skilled in the art inventive concept of the present invention, technical scheme had more complete, accurate and deep understanding.

Referring to Fig. 2,3 as can be known; capacitive touch screen glass substrate 3 float glass process faces of the present invention are provided with ITO jump conductor figure layer 4, OC insulation bridge formation layer 5, ITO unit figure 6 and resin protective layer 8 successively; periphery is provided with metal wiring diagram layer 7 all around, is provided with electrostatic prevention ITO layer 2 and electrostatic prevention silicon dioxide layer of protection 1 successively in glass substrate 3 air surface.Produce dazzle for fear of metal jump conductor 9 figure layers, technological parameter is controlled easily, such make jump conductor figure layer with the ITO conducting film and replace metal jump conductor figure layer.Technological parameter is controlled well, and ITO jump layer pattern width is 30um, and ITO conductive film layer transmitance is good, is difficult for producing dazzle.

When capacitive touch screen of the present invention is manufactured, if making, respective material adopts and identical in the past technology, the ITO conducting film that is ITO jump conductor figure layer 4 adopts normal vacuum magnetic-control sputtering mode, sputter temperature is 250 ℃-350 ℃, using mixing quality mark ratio is that 98% iron chloride and 2% hydrochloric acid carry out the gold-tinted etching technique and carries out etching, identical because of material with ITO unit figure 6 in order to prevent ITO jump conductor figure layer 4, and etched away effectively scheming layer by same etching soup, cause opening circuit on the function, the ITO conducting film adopts the vacuum magnetic-control sputtering mode when then needing to make ITO unit figure 6, sputter temperature is 25 ℃-30 ℃ of normal temperature, uses oxalic acid to carry out the gold-tinted etching technique and carries out etching.But the ITO film resistance that normal temperature vacuum magnetic-control sputtering mode sputter comes out and ITO thickness are difficult to control, will carry out high-temperature baking (240 ℃ of temperature after the etching of making gold-tinted oxalic acid; Time; 30-45 minute) reduction ITO film resistance (normal temperature sputter ITO film resistance is reduced to the needed ITO film resistance of standard by high-temperature baking).The present invention is identical because of material with ITO unit figure layer 6 in order to prevent ITO jump conductor figure layer 4.And etched away effectively scheming layer by same etching solution, cause short circuit on the function.So the present invention makes and uses OC negativity insulation transparent photoresistance when layer is built bridge in insulation; its strong adhesion; be difficult for four limit perks and come off etching soup attack destruction ITO jump conductor figure layer 4 when effectively protecting ITO jump conductor not made ITO unit figure layer 6 pattern by following one processing procedure.

Develop production technology more efficiently at this point:

Step 1, glass substrate 3 adopt strengthens the normal touch base plate glass in back, the float glass process face adopts the vacuum magnetic-control sputtering method to be coated with ITO jump conductor figure layer 4, sputter temperature is 250 ℃-350 ℃, adopts the touch control part gold-tinted photoetching technique of touch screen, and the ITO film is cleaned, coating, baking, exposure, development, etching, stripping technology is handled, and is made into ITO jump conductor figure layer 4;

Step 2, make one decks by the gold-tinted photoetching making OC insulation layer 5 of building bridge at ITO jump conductor figure layer 4; Adopt the touch control part gold-tinted photoetching technique of controlling screen, clean successively, coating, baking, exposure, development, hard curing process is handled, and makes OC insulation bridge formation layer 5; Also be this patent key point, utilize OC negativity insulation transparent photoresistance to make insulation bridge formation layer;

OC positivity insulation transparent photoresistance gold-tinted becomes pattern by mask plate in making, and has by the light-struck regional photoresistance of UV by developing photoresistance to be removed.Positivity insulation transparent photoresistance poor adhesive force, easily the perk ITO etching soup seepage that makes in edge is etched the ITO jump conductive pattern of originally making, and causes function to open circuit, advantage: produce when unusual the processing of can doing over again.During OC negativity insulation transparent photoresistance gold-tinted is made, produce when unusual the processing of can't doing over again.Advantage: adhesion is good.Can effectively protect ITO jump conductor figure layer not attacked and destroy ITO jump conductor figure layer;

Therefore make and use OC negativity insulation transparent photoresistance when layer is built bridge in insulation, its strong adhesion, be difficult for four limit perks and come off etching soup attack destruction ITO jump conductor figure layer 4 when effectively protecting ITO jump conductor not made ITO unit figure 6 patterns by following one processing procedure;

Step 3, employing vacuum magnetic-control sputtering method are coated with ITO unit figure 6, adopt 300-350 ℃ of vacuum magnetic-control sputtering method of normal parameter to be coated with; Make ITO unit figure layer 6 at the ITO of sputter film again, this is conventional means, namely adopts the touch control part gold-tinted photoetching technique of touch screen, the ITO film is coated with, and baking, exposure, development, etching, stripping technology is handled, and is made into ITO unit figure layer 6;

This priority theme for this patent makes ITO-jumper and ITO-pattern is to use normal high temperature plated film.Normal high temperature plated film advantage: the ITO molecular structure is firm, good conductivity, the easy management and control process parameter of technology.Normal high temperature plated film ITO makes jumper before having improved, and low temperature plated film ITO makes the production method of pattern.During the ITO of mode sputter ITO-pattern layer, surface resistance and transmitance be difficult control all before, after also need be in the pattern etching by the row high-temperature baking.The reduction surface resistance.Also have gold-tinted will use two kinds of different ITO etching soups, the row's of production product and soup control are made troubles;

Step 4, utilize the vacuum magnetic-control sputtering coating machine outside the ITO unit figure of making 6, to plate the layer of metal conductive material afterwards. make wiring diagram layer 7 around the metal more here, it adopts touch-screen gold-tinted photoetching technique, metal level is carried out: clean, coating, soft roasting, exposure, develop, hard roasting, etching, the stripping PROCESS FOR TREATMENT, and finally be made into metal wiring diagram layer 7 all around;

Step 5, in the glass substrate air surface respectively by be coated with electrostatic prevention ITO layer 2 and electrostatic prevention silicon dioxide layer of protection 1 successively with vacuum magnetic-control sputtering; pass through gold-tinted photoetching making resin protective layer 8 at float glass process face outermost layer; here resin protective layer 8 also is to adopt touch-screen gold-tinted photoetching technique to clean; coating; soft roasting, exposure is developed; hard roasting PROCESS FOR TREATMENT is made into resin protective layer 8.

By reference to the accompanying drawings the present invention has been carried out exemplary description above; obviously specific implementation of the present invention is not subjected to the restriction of aforesaid way; as long as adopted the improvement of the various unsubstantialities that method of the present invention design and technical scheme carry out; or without improving design of the present invention and technical scheme are directly applied to other occasion, all within protection scope of the present invention.

Claims

1. capacitive touch screen is characterized in that: the glass substrate of touch screen (3) float glass process face is provided with ITO jump conductor figure layer (4), OC insulation build bridge layer (5), an ITO unit figure (6) successively, and periphery is provided with wiring diagram layer (7) around the metal.

2. capacitive touch screen according to claim 1; it is characterized in that: described glass substrate (3) air surface is provided with electrostatic prevention ITO layer (2) and electrostatic prevention silicon dioxide layer of protection (1) successively, the outer resin protective layer (8) that is provided with of described ITO unit figure (6).

3. capacitive touch screen according to claim 2 is characterized in that: described OC insulation bridge formation layer (a 5) employing OC negativity insulation transparent photoresistance.

4. the production technology of a capacitive touch screen is characterized in that:

Step 1, glass substrate (3) float glass process face adopt the vacuum magnetic-control sputtering method to be coated with the ITO film, make ITO jump conductor figure layer (4) by the gold-tinted photoetching process again;

Step 2, make one deck by the gold-tinted photoetching making OC insulation layer (5) of building bridge at ITO jump conductor figure layer (4);

Step 3, employing vacuum magnetic-control sputtering method are coated with the ITO film, make ITO unit figure (6) by the gold-tinted photoetching method again;

Step 4, utilize the vacuum magnetic-control sputtering coating machine outside the ITO unit figure of making (6), to plate the layer of metal conductive material afterwards, more here by wiring diagram layer (7) around the gold-tinted photoetching making metal;

Step 5, in the glass substrate air surface respectively by being coated with electrostatic prevention ITO layer (2) and electrostatic prevention silicon dioxide layer of protection (1) successively with vacuum magnetic-control sputtering, at float glass process face outermost layer by gold-tinted photoetching making resin protective layer (8).

5. the production technology of capacitive touch screen according to claim 4 is characterized in that: it is 250 ℃-350 ℃ that described ITO jump conductor figure layer (4) and ITO unit figure (6) adopt the sputter temperature of vacuum magnetic-control sputtering method.