CN103941930B - Capacitive touch screen sensor and preparation method thereof - Google Patents
Capacitive touch screen sensor and preparation method thereof Download PDFInfo
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- CN103941930B CN103941930B CN201310025408.XA CN201310025408A CN103941930B CN 103941930 B CN103941930 B CN 103941930B CN 201310025408 A CN201310025408 A CN 201310025408A CN 103941930 B CN103941930 B CN 103941930B
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Abstract
The present invention provides a kind of capacitive touch screen sensor and preparation method thereof, and the capacitive touch screen sensor includes：Substrate, positioned at the first conductive layer of substrate surface, the first insulating barrier on the first conductive layer and substrate, the second conductive layer on the first insulating barrier, the first conductive layer and substrate, and the second insulating barrier on the second conductive layer and the first insulating barrier；Wherein, the first insulating barrier is provided with via, and the second conductive layer is connected with the first conductive layer by via, and the first insulating barrier is set at least cover all regions in addition to via on the first conductive layer, and covering part substrate surface.All regions of the invention by being set at least cover by the area of the first insulating barrier on the first conductive layer in addition to via, and the subregion of covering substrate surface, reduce the overall area coverage of the first insulating barrier, improve the overall transmitance of touch panel sensor, the etching technics difficulty of the first insulating barrier is reduced simultaneously, industrial production is advantageously implemented, product quality and qualification rate is improved.
Description
Technical field
The present invention relates to touch screen technology, and in particular to a kind of capacitive touch screen sensor and preparation method thereof.
Background technology
In traditional unilateral tin indium oxide (SITO, Single ITO) capacitive touch screen sensor (Sensor), use
SiO2Or SiNxDuring as insulating barrier, large area etching easily causes insulating barrier residual.In order to avoid insulating barrier residual is to sensor
Function produces influence, and capacitive touch screen sensor typically separates the second transverse conducting layer and second using extensive insulation layer and indulged
Conductive layer.Fig. 1 and Fig. 2 is the plan and profile of existing conventional capacitive touch screen sensor.Such as Fig. 1 and Fig. 2 institutes
Show, the structure of capacitive touch screen sensor includes substrate 10, the first conductive layer 11 positioned at the surface of substrate 10, position from the bottom to top
In the first insulating barrier (SiO on the first conductive layer 11 and substrate 102/SiNx) 12, positioned at the first insulating barrier 12 and the first conductive layer
The second conductive layer (ITO) 13 on 11 and the second insulating barrier (SiO on the second conductive layer 13 and the first insulating barrier 122/
SiNx) 14, wherein, the second conductive layer 13 includes the second transverse conducting layer (ITO-X) 13A and second longitudinal direction conductive layer (ITO-Y)
13B, the second transverse conducting layer 13A and second longitudinal direction conductive layer 13B is separated by the second insulating barrier 14, second longitudinal direction conductive layer
13B is directly turned on, and the second transverse conducting layer 13A is attached by metal/ITO (tin indium oxide) bridge, the first conductive layer 11 with
Connected between second transverse conducting layer 13A by the via 15 on the first insulating barrier 12.
Find out from Fig. 1 and Fig. 2, in the structure of existing conventional capacitive touch screen sensor, the first insulating barrier almost covers
All regions in addition to via on substrate are covered, along with outermost second insulating barrier so that capacitive touch screen sensor
Most of region thicknesses of layers it is thicker so that the overall transmitance of touch panel sensor is relatively low, according to SiNxAs
First insulating barrier, then touch-screen is by with deeper color.
Fig. 3 and Fig. 4 is the plan and profile of the higher capacitive touch screen sensor of transmitance in theory.Such as Fig. 3
And shown in Fig. 4, the higher capacitive touch screen sensor of transmitance includes substrate 20, positioned at the table of substrate 20 from bottom to top in theory
First conductive layer 21 in face, the first insulating barrier 22 on the first conductive layer 21, positioned at the first insulating barrier 22, the first conductive layer
21 and the second conductive layer 23 on substrate 20 and the second insulating barrier 24 on the second conductive layer 23 and the first insulating barrier 22, its
In, it is direct with second longitudinal direction conductive layer 23B, second longitudinal direction conductive layer 23B that the second conductive layer 23 includes the second transverse conducting layer 23A
The difference of conducting, the in theory higher capacitive touch screen sensor of transmitance and existing conventional capacitive touch screen sensor
It is do not have via, the first conductive layer on the first insulating barrier 22 of the higher capacitive touch screen sensor of transmitance in theory
21 are directly connected to second longitudinal direction conductive layer 23B, and the second transverse conducting layer 23A is attached by metal bridge, the first insulating barrier
22 overlay area area is smaller (subregion for only covering the first conductive layer 11), so as to reduce the big portion of touch panel sensor
Subregional thicknesses of layers, improves the overall transmitance of touch panel sensor, it also avoid using SiNxIt is used as the first insulation
Touch-screen has compared with dark colour problem during layer, but because the area coverage of the first insulating barrier is smaller, causes the first insulating barrier
Etching technics difficulty is increased, it is more difficult to is carried out volume production, and because the first insulating barrier only covers the subregion of the first conductive layer, is also made
Easily the first conductive layer is etched when must etch the first insulating barrier, making the qualification rate of product reduces, while the first conductive layer is not yet
Adequately protecting for the first insulating barrier can be obtained, so that the quality on product produces influence.
Therefore, a kind of transmitance how is provided higher and easily realize that industrial capacitive touch screen sensor turns into
This area urgent problem to be solved.
The content of the invention
In view of this, it is a primary object of the present invention to provide a kind of capacitive touch screen sensor and preparation method thereof,
The area coverage of the insulating barrier of capacitive touch screen sensor is reduced, transmitance is improved, and is beneficial to realize industrial production.
In order to achieve the above object, the present invention provides a kind of capacitive touch screen sensor, and the capacitive touch screen is passed
Sensor includes：
Substrate,
Positioned at the first conductive layer of substrate surface,
The first insulating barrier on first conductive layer and the substrate,
The second conductive layer on first insulating barrier, first conductive layer and the substrate, and
The second insulating barrier on second conductive layer and first insulating barrier；
Wherein, first insulating barrier is provided with via, and second conductive layer passes through described with first conductive layer
Via is connected, and first insulating barrier is set at least cover all areas on first conductive layer in addition to the via
Domain, and covering part substrate surface.
Further, second conductive layer includes the second transverse conducting layer and second longitudinal direction conductive layer, and described second is horizontal
Conductive layer or the second longitudinal direction conductive layer are connected by the via with first conductive layer.
Further, the material of first insulating barrier and/or second insulating barrier is SiNxOr SiO2。
The present invention further provides a kind of preparation method of capacitive touch screen sensor, methods described includes following step
Suddenly：
Step a, in substrate surface depositing first conductive layer, the first conducting layer figure is formed by etching；
Step b, the depositing first insulator layer on the substrate after completing step a processing, the first insulating barrier is formed by etching
The first insulating barrier after via, and etching is formed with the first insulating barrier after figure, etching at least to cover on the first conductive layer
All regions in addition to via, and covering part substrate surface, and on the first conductive layer and substrate；
Step c, the deposit second conductive layer on the substrate after completing step b processing, the second conductive layer is formed by etching
The second conductive layer after figure, etching is located on the first insulating barrier, the first conductive layer and substrate, the second conductive layer and the first conduction
Layer is connected by via；And
Step d, the second insulating barrier is deposited on the substrate after completing step c processing.
Further, in step c, the second conductive layer after the etching includes the second transverse conducting layer and second longitudinal direction is led
Electric layer, second transverse conducting layer or the second longitudinal direction conductive layer are connected by via with first conductive layer.
Further, the material of first insulating barrier and/or second insulating barrier is SiNxOr SiO2。
Compared with prior art, the area of the first insulating barrier of the capacitive touch screen sensor that the present invention is provided is set to
At least cover all regions in addition to via on the first conductive layer, and the subregion of covering substrate surface so that first is exhausted
The overall area coverage of edge layer is reduced, so as to reduce total thicknesses of layers of touch panel sensor, improves touch panel sensor
Overall transmitance, it is to avoid use SiNxHave as touch-screen during the first insulating barrier compared with dark colour problem, simultaneously because this
All regions in addition to via on the first insulating barrier the first conductive layer of covering of the capacitive touch screen sensor provided are provided,
So that the capacitive touch screen sensor of the present invention is compared with the higher capacitive touch screen sensor of transmitance in theory, first
The etching difficulty reduction of insulating barrier, it is easier to realize industrial production, improve product qualification rate, and can effectively protect first to lead
Electric layer, so as to be conducive to improving the quality of product.
Brief description of the drawings
Fig. 1 is the plan of existing conventional capacitive touch screen sensor；
Fig. 2 is the profile of existing conventional capacitive touch screen sensor；
Fig. 3 is the plan of the higher capacitive touch screen sensor of transmitance in theory；
Fig. 4 is the profile of the higher capacitive touch screen sensor of transmitance in theory；
Fig. 5 is the plan of the capacitive touch screen sensor of the present invention；
Fig. 6 is the profile of the capacitive touch screen sensor of the present invention；
Fig. 7 is the preparation method flow chart of the capacitive touch screen sensor of the present invention.
Description of reference numerals
10th, 20,30 substrate
11st, 21,31 first conductive layer
12nd, 22,32 first insulating barrier
13rd, 23,33 second conductive layer
14th, 24,34 second insulating barrier
15th, 35 via
The transverse conducting layer of 13A, 23A, 33A second
13B, 23B, 33B second longitudinal direction conductive layer
Embodiment
The technical content and a detailed description for the present invention, coordinate brief description of the drawings as follows, but appended accompanying drawing only provides ginseng
Examine and used with explanation, not for being any limitation as to the present invention.
The basic thought of the present invention is, by reducing the area coverage of the first insulating barrier in touch panel sensor, reduces
Total thicknesses of layers of touch panel sensor, so as to improve the light transmittance of touch panel sensor, it is to avoid use SiNxIt is exhausted as first
Touch-screen has compared with dark colour problem during edge layer, meanwhile, the first insulating barrier is covered on the first conductive layer in addition to via
All regions, reduce the etching technics difficulty of the first insulating barrier, are easier to realize industrial production, and can effectively protect first to lead
Electric layer, so as to improve product quality.
Fig. 5 and Fig. 6 is the plan and profile of the capacitive touch screen sensor of the present invention.As shown in Figures 5 and 6,
The touch panel sensor of the present invention includes from bottom to top：Substrate 30, the first conductive layer 31 positioned at the surface of substrate 30, positioned at first
The first insulating barrier 32 on conductive layer 31 and substrate 30, on the first insulating barrier 32, the first conductive layer 31 and substrate 30
Two conductive layers 33 and the second insulating barrier 34 on the second conductive layer 33 and the first insulating barrier 32, wherein, the second conductive layer 33
Including the second transverse conducting layer 33A and second longitudinal direction conductive layer 33B, the second transverse conducting layer 33A and second longitudinal direction conductive layer 33B
Separated by the second insulating barrier 34, second longitudinal direction conductive layer 33B is directly turned on, the second transverse conducting layer 33A passes through metal/the second
Conductive layer bridge is attached, and the first insulating barrier 32 is provided with the second horizontal stroke of via 35, the first conductive layer 31 and the second conductive layer 33
Connected between conductive layer 33A by via 35.
It should be noted that only show that second longitudinal direction conductive layer 33B is directly turned in Fig. 5 and Fig. 6, the second transverse conducting layer 33A
The example connected by via 35 with the first conductive layer 31, may be alternatively provided as the second transverse conducting layer 33A and directly turns on, and second indulges
Conductive layer 33B is connected by via 35 with the first conductive layer 31, is no longer described in detail herein.
First insulating barrier 32 is set at least cover all regions on the first conductive layer 31 in addition to via 35, and covering
Part substrate surface.It is of the invention compared with the structure (referring to Fig. 1 and Fig. 2) of existing conventional capacitive touch screen sensor
The area coverage of first insulating barrier 32 of capacitive touch screen sensor is smaller, is ensureing at least to cover to remove on the first conductive layer 31
Outside all regions outside via 35, the part on the surface of substrate 30 covered by the first insulating barrier 32 can be selected according to actual conditions
Region, reduces the overall area coverage of the first insulating barrier 32, so as to reduce total thicknesses of layers of touch panel sensor, improves and touches
The overall transmitance of screen sensor is touched, while can avoid using SiNxHave as touch-screen during the first insulating barrier compared with dark colour
Problem.In addition, compared with the structure (referring to Fig. 3 and Fig. 4) of the higher capacitive touch screen sensor of transmitance in theory, this hair
First insulating barrier of bright capacitive touch screen sensor covers all regions in addition to via on the first conductive layer, more favorably
In providing sufficient protection for the first conductive layer, product quality is improved, it is to avoid carve the first conductive layer during the first insulating barrier of etching
Erosion, reduces the etching difficulty of the first insulating barrier 32 so that capacitive touch screen of the invention is easier to realize industrial production, favorably
In raising product qualification rate.
The first insulating barrier of the present invention and the material of the second insulating barrier can select material commonly used in the art and make, and preferably adopt
Made of transparent material, such as SiNxOr SiO2Deng.In addition, the shape of the second conductive layer of the capacitive touch screen sensor of the present invention
Shape can be rhombus (as shown in Figures 5 and 6), but the shape of the second conductive layer 33 is not limited in rhombus, can be also other shapes
Shape, such as rectangle, circle, ellipse, triangle, can select appropriate shape according to actual conditions.
Second conductive of the capacitive touch screen sensor of the present invention can be material commonly used in the art, such as aoxidize
Indium tin (ITO) etc..
The structure of the capacitive touch screen sensor of the present invention is not limited in the first conductive layer and passed through with the second conductive layer
The bridging structure (Fig. 5 and Fig. 6 shown in) of the second conductive layer (such as ITO) conducting in via, is equally applicable to taking for other SITO
Bridge structure, the bridge structure that such as the first conductive layer and the second conductive layer pass through the metal conduction in via.
The present invention further provides a kind of preparation method of capacitive touch screen sensor, as shown in fig. 7, method include with
Lower step：
Step a, in the surface depositing first conductive layer 31 of substrate 30, the first conducting layer figure is formed (referring to Fig. 7 by etching
In 1a)；
Step b, the depositing first insulator layer 32 on the substrate after completing step a processing forms the first insulation by etching
The first insulating barrier 32 after via 35, and etching is formed with the first insulating barrier 32 after layer pattern, etching and at least covers first
All regions on conductive layer 32 in addition to via 35, and the part surface of covering substrate 30, and positioned at the first conductive layer 31 and
(referring to the 1b in Fig. 7) on substrate 30；
Step c, the deposit second conductive layer 33 on the substrate after completing step b processing forms the second conduction by etching
The second conductive layer 33 after layer pattern, etching is located on the first insulating barrier 32, the first conductive layer 31 and substrate 30, the second conductive layer
33 are connected (referring to the 1c in Fig. 7) with the first conductive layer 31 by via 35；And
Step d, the second insulating barrier 34 is deposited on the substrate 30 after completing step c processing (referring to the 1d in Fig. 7).
In above-mentioned steps b, it can select material commonly used in the art and make the first insulating barrier, such as SiNxOr SiO2Deng.
In above-mentioned steps c, the second conductive layer 33 after etching includes the second transverse conducting layer 33A and second longitudinal direction is conductive
Layer 33B, the second transverse conducting layer 33A or second longitudinal direction conductive layer 33B are connected by via 35 with the first conductive layer 31, in Fig. 7
Only show that second longitudinal direction conductive layer 33B is directly turned on, the second transverse conducting layer 33A is connected by via 35 with the first conductive layer 31
Example, may be alternatively provided as the second transverse conducting layer 33A and directly turn on, second longitudinal direction conductive layer 33B passes through via 35 and first
Conductive layer 31 is connected.Shape after second conductive layer 33 is etched can be rhombus, rectangle, circle, ellipse or triangle etc., can
According to actual conditions, appropriate shape is selected, the second conductive can be material commonly used in the art, such as ITO in addition.
In above-mentioned steps d, it can select material commonly used in the art and make the first insulating barrier, such as SiNxOr SiO2Deng.
In above-mentioned steps a-d, layers of material can be deposited and etched using equipment commonly used in the art, according to above-mentioned
The composition and structure for the capacitive touch screen sensor that the capacitive touch screen sensor that method makes is provided with the present invention are complete
Identical, concrete structure can refer to the description of the foregoing capacitive touch screen sensor to the present invention, and here is omitted.
To sum up, the present invention by the area of the first insulating barrier of capacitive touch screen sensor by being set at least to cover the
All regions on one conductive layer in addition to via, and the subregion of covering substrate surface so that the entirety of the first insulating barrier
Area coverage is reduced, so as to reduce total thicknesses of layers of touch panel sensor, improves the overall transmission of touch panel sensor
Rate, it is to avoid use SiNxHave as touch-screen during the first insulating barrier compared with dark colour problem, while making the quarter of the first insulating barrier
Lose difficulty reduction, it is easier to realize industrial production, improve product qualification rate, and can effectively protect the first conductive layer, so that
Be conducive to improving the quality of product.
Presently preferred embodiments of the present invention is these are only, is not used to limit the scope of the claims of the present invention, it is other with the present invention
Patent spirit equivalence changes, be encompassed by the present invention the scope of the claims in.
Claims (4)
1. a kind of capacitive touch screen sensor, it is characterised in that including：
Substrate,
Positioned at the first conductive layer of substrate surface,
The first insulating barrier on first conductive layer and the substrate,
The second conductive layer on first insulating barrier, first conductive layer and the substrate, and
The second insulating barrier on second conductive layer and first insulating barrier；
Wherein, first insulating barrier is provided with via, and second conductive layer passes through the via with first conductive layer
Connection, first insulating barrier is set at least cover all regions on first conductive layer in addition to the via, and
Covering part substrate surface；And
Wherein, second conductive layer includes the second transverse conducting layer and second longitudinal direction conductive layer, second transverse conducting layer
Or the second longitudinal direction conductive layer is connected by the via with first conductive layer；
First insulating barrier and second insulating barrier are made using transparent material.
2. capacitive touch screen sensor according to claim 1, it is characterised in that first insulating barrier and/or institute
The material for stating the second insulating barrier is SiNxOr SiO2。
3. a kind of preparation method of capacitive touch screen sensor, it is characterised in that comprise the following steps：
Step a, in substrate surface depositing first conductive layer, the first conducting layer figure is formed by etching；
Step b, the depositing first insulator layer on the substrate after completing step a processing, the first layer pattern is formed by etching,
The first insulating barrier after via, and etching is formed with the first insulating barrier after etching at least to cover on the first conductive layer except via
Outside all regions, and covering part substrate surface, and on the first conductive layer and substrate；
Step c, the deposit second conductive layer on the substrate after completing step b processing, the second conducting layer figure is formed by etching,
The second conductive layer after etching is located on the first insulating barrier, the first conductive layer and substrate, and the second conductive layer and the first conductive layer are logical
Via is connected；And
Step d, the second insulating barrier is deposited on the substrate after completing step c processing；
Wherein, in step c, the second conductive layer after the etching includes the second transverse conducting layer and second longitudinal direction conductive layer, institute
State the second transverse conducting layer or the second longitudinal direction conductive layer is connected by via with first conductive layer.
4. preparation method according to claim 3, it is characterised in that first insulating barrier and/or second insulation
The material of layer is SiNxOr SiO2。
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| CN201310025408.XA CN103941930B (en) | 2013-01-23 | 2013-01-23 | Capacitive touch screen sensor and preparation method thereof |
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| CN201310025408.XA CN103941930B (en) | 2013-01-23 | 2013-01-23 | Capacitive touch screen sensor and preparation method thereof |
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| CN103941930A CN103941930A (en) | 2014-07-23 |
| CN103941930B true CN103941930B (en) | 2017-09-05 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20210083816A (en) * | 2019-12-27 | 2021-07-07 | 엘지디스플레이 주식회사 | Touch display apparatus having a light-emitting device and a touch structure |
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| CN101630215A (en) * | 2009-06-29 | 2010-01-20 | 深圳莱宝高科技股份有限公司 | Capacitance type touch screen and manufacturing method thereof |
| CN102236492A (en) * | 2011-08-16 | 2011-11-09 | 深圳市宝明科技股份有限公司 | ITO (Indium Tin Oxide) bridge crossing capacitive touch screen and manufacturing method thereof |
| CN102243553A (en) * | 2010-05-16 | 2011-11-16 | 宸鸿科技(厦门)有限公司 | Capacitive touch panel and method for reducing visuality of metal conductor of capacitive touch panel |
| CN102253781A (en) * | 2011-08-16 | 2011-11-23 | 深圳市宝明科技股份有限公司 | Metal-bridge integrated capacitive touch screen and manufacturing method |
| CN203133797U (en) * | 2013-01-23 | 2013-08-14 | 北京京东方光电科技有限公司 | Capacitive touch screen sensor |
-
2013
- 2013-01-23 CN CN201310025408.XA patent/CN103941930B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101630215A (en) * | 2009-06-29 | 2010-01-20 | 深圳莱宝高科技股份有限公司 | Capacitance type touch screen and manufacturing method thereof |
| CN102243553A (en) * | 2010-05-16 | 2011-11-16 | 宸鸿科技(厦门)有限公司 | Capacitive touch panel and method for reducing visuality of metal conductor of capacitive touch panel |
| CN102236492A (en) * | 2011-08-16 | 2011-11-09 | 深圳市宝明科技股份有限公司 | ITO (Indium Tin Oxide) bridge crossing capacitive touch screen and manufacturing method thereof |
| CN102253781A (en) * | 2011-08-16 | 2011-11-23 | 深圳市宝明科技股份有限公司 | Metal-bridge integrated capacitive touch screen and manufacturing method |
| CN203133797U (en) * | 2013-01-23 | 2013-08-14 | 北京京东方光电科技有限公司 | Capacitive touch screen sensor |
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